Tesis sobre el tema "Titanium oxide"
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Ki, Jun-Wan. "Titanium Sponge on Titanium Substrate for Titanium Electrolytic Capacitor Anodes". Case Western Reserve University School of Graduate Studies / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=case1113244951.
Texto completoBoltz, Janika [Verfasser]. "Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides / Janika Boltz". Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2012. http://d-nb.info/1019850485/34.
Texto completoBurbidge, Douglas S. "Sputtering and characterizations of titanium oxide films". Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/25850.
Texto completoScience, Faculty of
Physics and Astronomy, Department of
Graduate
Graves, John Edward. "The electrochemistry of titanium oxide ceramic electrodes". Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305486.
Texto completoRusso, Manuela. "Titanium oxide hydrates : optical properties and applications". Thesis, Queen Mary, University of London, 2010. http://qmro.qmul.ac.uk/xmlui/handle/123456789/597.
Texto completoLiau, Forrest (Forrest W. ). "Virus-enabled synthesis of titanium oxide nanowires". Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35061.
Texto completoIncludes bibliographical references (p. 21-23).
Bio-assisted materials fabrication methods allow for the production of high technology materials and devices at lower costs and with less environmental impact. To expand the biological toolkit for synthesizing materials, we demonstrated titanium oxide nanowire synthesis with use of engineered M13 virus at room temperature. In this virus-enabled synthesis process, negatively-charged titanium fluoro complexes nucleate at positive amine sites on the virus, and a subsequent anion-scavenging reaction drives the synthesis of titanium oxide on the virus. TEM imagery provided visual validation of the nanowire formation, and XRD analysis identified the crystalline structure as anatase.
by Forrest Liau.
S.B.
Rosser, Paul John. "Titanium disilicide for VLSI applications". Thesis, University of Surrey, 1987. http://epubs.surrey.ac.uk/847968/.
Texto completoBlackwood, D. J. "Anodic oxide films on titanium in acidic media". Thesis, University of Southampton, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374565.
Texto completoKällquist, Ida. "Lithium titanium oxide materials for hybrid supercapacitor applications". Thesis, Uppsala universitet, Strukturkemi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-301977.
Texto completoWang, Haoran. "Preparation of Titanium Oxide/Epoxy Hybrid Anticorrossive Coating". University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1480326524997686.
Texto completoCottam, Ben Francis. "The synthesis of one-dimensional titanium oxide nanostructures". Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/11985.
Texto completoKopecek, Radovan. "Electrolysis of Titanium in Heavy Water". PDXScholar, 1995. https://pdxscholar.library.pdx.edu/open_access_etds/5023.
Texto completoSubramaniam, Srinivas. "Systems with barium oxide and titanium oxide additions in the near stoichiometric region". Cincinnati, Ohio : University of Cincinnati, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1047057044.
Texto completoWang, Gang. "Apatite forming ability of alkali-treated titanium oxide-coated pure titanium in simulated body environment". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/MQ55937.pdf.
Texto completoRodríguez, Rodríguez Juan Martín. "Sputter deposited titanium oxide films for photoelectrochemical water purification". Universidad Nacional de Ingeniería. Programa Cybertesis PERÚ, 2000. http://cybertesis.uni.edu.pe/uni/2000/rodriguez_rj/html/index-frames.html.
Texto completoBothma, Jan Andries. "Heat transfer through mould flux with titanium oxide additions". Diss., Pretoria : [s.n.], 2006. http://upetd.up.ac.za/thesis/available/etd-10182007-161313/.
Texto completoOnifade, Ayokola. "Enhanced deposition of titanium (IV) oxide for optical coatings". Thesis, University of Salford, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492432.
Texto completoChoi, Soon Ju S. M. Massachusetts Institute of Technology. "Breakdown Anodization (BDA) for hierarchical structures of titanium oxide". Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85503.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages 57-61).
Breakdown Anodization (BDA) of titanium dioxide is a very promising, fast fabrication method to construct micro-scale and nano-scale structures on titanium surfaces. This method uses environmentally friendly electrolytes, such as nitric acid, and can be fabricated within 30 minutes regardless of substrate size. Because the titanium dioxide is hydrophilic, the micro structured BDA surface exhibits super-hydrophilic properties. BDA surfaces can be applicable to water transport, chromatography, electrospray, and fabrication of hierarchically structured surfaces. In this study we investigate the wicking properties of BDA surfaces and quantify their performance in terms of capillary pressure and capillary spreading speed constant. Further, we investigate the application of BDA surfaces to electrospray for the separation and identification of chemical agents.
by Soon Ju Choi.
S.M.
Valente, João Pedro Mire Dores Pulido. "Calcium copper titanium oxide thin films for microelectronic applications". Master's thesis, Universidade de Aveiro, 2010. http://hdl.handle.net/10773/7612.
Texto completoRecent research has shown that the perovskite-related body-centred cubic material CaCu3Ti4O12 (CCTO) exhibit extraordinarily giant dielectric constant at room temperature (ε ≈ 104-105). Besides, these high dielectric constants were found to be nearly constant in the temperature range between 100 and 500K [1, 2]; which makes it even more attractive from the technological point of view. These properties are very important for device implementation and make CCTO a promising candidate for microelectronic applications (like decoupling capacitors, random access memories), microwave devices (for applications in mobile phones), antennas (for example, planar micro-strip antenna on CCTO substrate for 3-GHz operation) [3]. In the microelectronics device field, homogeneous and smooth thin films with colossal dielectric constant and with low dielectric loss are desirable. In the literature, only five reports on undoped CCTO films on silicon based substrates prepared by sol-gel method can be found. The majority of these authors did not present the dielectric and microstructural properties of the produced CCTO films. In this work, thin films of CCTO were prepared by sol-gel method by spin coating a nontoxic chemical solution on typical microelectronic substrates, Si (wafer) / SiO2 (300 nm) / TiO2 (20 nm) / Pt (150 nm). Two different precursor solutions were studied and optimized for film production. These two solutions differ mainly on the titanium precursor, although some preparation parameters where changed as well. One of the main objectives of the thesis was to develop nontoxic precursors for CSD method and accordingly, solutions were prepared without methoxyethanol (highly toxic). This constitutes a great improvement considering the good properties obtained for the 300-400 nm thick CCTO films prepared in this work: dielectric permittivity, ε of 500 and dielectric loss, tan of 0.19, for films derived from titanium butoxide precursor solutions (BUT-CCTO) and ε ≈ 620 and dielectric loss 0.18 for those derived from titanium isopropoxide precursor solutions (ISO-CCTO), all values at 1 kHz. In literature, toxic precursor solution of CCTO leads to films with values for dielectric permittivity of 1000-2000 and dielectric loss between 0.5 – 0.04 [52]. Best reports on nontoxic solutions for spin coating method presented dielectric constant (≈ 150-250) and losses around 0.2-0.5 [45]. The physical properties of the films were characterised. The structural and microstructural characterization was conducted via X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). [CALCIUM COPPER TITANIUM OXIDE THIN FILMS FOR MICROELECTRONIC APPLICATIONS] 10 For the electrical characterization the dielectric constant and dielectric losses were measured at room temperature in the range 100 Hz-1 MHz. AFM microstructure and especially potential images, confirmed IBLC model for conduction, since grain and grain boundaries presented different potentials due to their different electrical behaviour. This result was obtained for every sample made with both solutions. Grain size has a considerable influence on the dielectric properties of the thin films. grain films present high dielectric constant and high dielectric loss. Small grain origins lower dielectric constant but also low dielectric loss. In this work and based on IBLC model, it was found that grain and high grain boundaries density will guarantee good permittivity according with [6, 9], although with grain size increase, grain boundaries density decrease. An intermediate stage for grain size must be achieved depending on the solution used. Considering the dielectric loss, it was found to respect mainly to grain boundaries. High density of grain boundaries promotes second phase segregation (TiO2) due to low temperature heat treatments and worst insulator behaviour [18,24]. For one side, high density will lower dielectric loss confirming [6,13], on the other side, second phase segregation will increase it, as reported in [18, 24]. A compromise between the capacity of the semiconductor grains to admit charges and the resistivity of the insulator grain boundaries must be achieved to obtain good quality CCTO thin films. The admission of charges by the grain is controlled by the grain size (heat treatment procedure) meanwhile the current density of the grain boundaries is controlled by second phase segregation (solution procedure) and grain boundaries density (heat treatment procedure). As a final output of this work a new non-toxic precursor solution was developed as an alternative way for preparing CCTO thin films of high dielectric constant for microelectronic applications.
Gunnarsson, Rickard. "Titanium oxide nanoparticle production using high power pulsed plasmas". Licentiate thesis, Linköpings universitet, Plasma och beläggningsfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128622.
Texto completoMunktell, von Fieandt Sara. "Controlled interlayer between titanium carbon-nitride and aluminiumoxide". Thesis, Uppsala universitet, Institutionen för materialkemi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-161088.
Texto completoRezai-Tabrizi. "Surface treatments of titanium and its alloys". Thesis, University of Manchester, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338082.
Texto completoZhang, Lijuan. "Preparation and mechanical properties of CoTi and CoTi(Zr) intermetallic crystals". Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288529.
Texto completoSharma, Amit M. "Growth and thermal degradation of titanium oxide nanotubes on titanium for bone implants a microstructural evaluation /". Pullman, Wash. : Washington State University, 2009. http://www.dissertations.wsu.edu/Thesis/Fall2009/a_sharma_113009.pdf.
Texto completoTitle from PDF title page (viewed on Feb 19, 2010). "School of Mechanical and Materials Engineering." Includes bibliographical references (p. 37-39).
LoStracco, Gregory 1960. "Furance and carbon dioxide laser densification of sol-gel derived silicon oxide-titanium oxide-aluminum oxide planar optical waveguides". Thesis, The University of Arizona, 1994. http://hdl.handle.net/10150/291388.
Texto completoOvalle, Alejandro. "Manganese titanium perovskites as anodes for solid oxide fuel cells". Thesis, St Andrews, 2008. http://hdl.handle.net/10023/567.
Texto completoBrown, Robert Alexander. "The combustion of titanium powder in air and iron oxide". Thesis, University of Nottingham, 2000. http://eprints.nottingham.ac.uk/28106/.
Texto completoKearns, Audrey Louise. "Low temperature synthetic routes to titanium and niobium oxide bronzes". Thesis, University of Reading, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.384871.
Texto completoHassine, Nabile. "Microwave-assisted synthesis of non-oxide ceramic powders". Thesis, University of Nottingham, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240494.
Texto completoGunti, Srikanth. "Enhanced Visible Light Photocatalytic Remediation of Organics in Water Using Zinc Oxide and Titanium Oxide Nanostructures". Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/6852.
Texto completoYen, Li Chen y 嚴立丞. "The Electrical and Structural Properties of Thulium Oxide, Thulium Titanium Oxide, Ytterbium Titanium Oxide, and Holmium Titanium Oxide Gate Dielectrics". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/13869296123658571908.
Texto completo長庚大學
電子工程學研究所
97
In this thesis, we reported on structural and electrical characteristic of high-k thulium oxide (Tm2O3), tulium titanium oxide (Tm2Ti2O7), ytterbium titanium oxide (Yb2TiO5) and holmium titanium oxide (HoTiO5) the metal-oxide-semiconductor capacitance gate dielectrics by reactive RF sputtering. Effect of titanium content in thulium oxide, ytterbium oxide and holmium oxide of the gate dielectrics with post deposition O2 annealing treatment on the crystallization temperature, leakage current, dielectric constant, and interface trap density. Compared to Tm2O3, Tm2Ti2O7, Yb2TiO5, and HoTiO3 was found to exhibit excellent electrical property such as a high accumulation capacitance, low leakage current density and a thin interfacial layer. The superiority of Tm2Ti2O7, Yb2TiO5, and HoTiO3 can be attributed to the addition of titanium the thulium oxide and holmium oxide matrix. It is found that the capacitance value of Tm2Ti2O7, Yb2TiO5, and HoTiO3 gate dielectric annealed at 800°C is higher compared to the other annealing temperatures and exhibits a lower hysteresis voltage as well as interface trap density in C-V curves. They also show almost negligible charge trapping under high constant voltage stress. This phenomenon is attributed to an amorphous Tm2Ti2O7, Yb2TiO5, and HoTiO3 structure and the decrease of the interfacial layer and Tm and Ho silicate thickness observed by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. In addition, we reported Tm2Ti2O7, Yb2TiO5, and HoTiO3 compound layers grown by PDA process should display a sufficiently high-k value to achieve very thin EOT values, combined with lower hysteresis voltage, interface trap density, low leakage current density, and good reliability. This is due to the formation of amorphous microstructure and the reduction of lower-k interfacial layer.
Huang, Wei-Cheng y 黃韋誠. "Interfacial Reactions between Titanium and Titanium Dioxide/ Calcium Oxide/ Alumina Oxide Composites". Thesis, 2016. http://ndltd.ncl.edu.tw/handle/51006258184981192308.
Texto completo國立交通大學
材料科學與工程學系所
104
Various proportions of TiO2 / CaO / Al2O3 powders were mixed and hot pressed at 1300°C for 30min. These hot-pressed specimens reacted with the commercially pure titanium at 1500°C for 6hour in 1 atm argon atmosphere. The high temperature interfacial reactions were explored between each ceramic specimen and titanium metal. The interface microstructures were analyzed using an X-ray diffraction diffractometer (XRD) and an analytic scanning electron microscope (SEM/EDS). When ceramic specimens reacted with titanium at 1500°C for 6hour, the oxygen would be dissolved to the titanium to form α-Ti due to the great affinity between oxygen and titanium, resulting in the hypoxia phenomenon in the ceramic side near the interface. In the CaTiO3 specimens incorating with Al2O3. When the ceramic specimens with the volume ratio of Al2O3 was 10%. Al will not diffus to Ti. It dissolves in CaTiO3, and form Ca (Ti, Al) O3. When the ceramic specimens with the volume ratio of Al2O3 was more than 30%. There were melted phenomenon in the specimens. Because the chain reaction of the residual CaO and Al2O3, resulting in a lower melting point compounds. As well as the titanium oxide and Al2O3 will produce again.
Li, Zhisheng. "Surface Chemistry Studies of Transition Metal Oxides: Titanium Oxide and Iron Oxide". Thesis, 2015. https://doi.org/10.7916/D8R2109Z.
Texto completoPeng, Yong-Jie y 彭勇傑. "Investigation of Titanium oxide/Cuprous oxide photo-electrodes". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/27286558784993947414.
Texto completo元智大學
化學工程與材料科學學系
99
In this study, we used electrochemical deposition to prepare titanium dioxide/cuprous oxide composite electrodes and applied in solar hydrogen system. The composite electrodes demonstrate the photo-electrochemical effect in water during the visible light irradiation. Two kinds of cuprous oxide electrodes in different crystalline, faceted and dendritic structures, were prepared by electrochemical deposition. After analysis, modification of titanium dioxide electrodes can enhance the photo-electrochemical performance. Cuprous oxide of faceted crystal is a p-type semiconductor; whereas, the dendritic crystal is a n-type semiconductor. Both types of the cuprous oxide samples can absorb visible light. Furthermore, the titanium dioxide / cuprous oxide composite electrode can improve the photo-electrochemical performance in the visible light irradiation, compared to titanium dioxide electrodes.
Liao, Pei You y 廖培佑. "Development of ytterbium titanium oxide and terbium titanium oxide sensing membranes for biosensor applications". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/10575588086692712406.
Texto completo長庚大學
電子工程學系
100
This thesis, ytterbium titanium and terbium titanium oxide dielectric grown using reactive RF-sputtering was investigated as sensing membrane of pH-EIS structure. We use the ytterbium (terbium) target and titanium target with sputtering deposition in the p-type Si wafer, and the formation of ytterbium titanium oxide via rapid thermal annealing system. We found the optimum condition was that the annealing temperature was 900oC.It represent a larger sensitivity, lower drift rate, and smaller hysteresis width. Additionally, in order to avoid generation of hydration layer of the gate insulator and reduce the formation of ytterbium-silicate, we deposited titanium on ytterbium oxide sensing, membranes and samples was rapid thermal annealed in oxygen. We found that titanium-doping exhibits better sensing characteristics. We combine a biomolecule layer to become biomolecule film/YbTixOy sensing membrane/p-Si EIS structure for glucose and DNA sensor applications and we hope them could be extended to bio-sensor application. Due to the methods used to detect DNA in clinical Price high time for a long time, often have more than a week's time, our DNA detection rate is very rapid, can be very accurate detection accuracy is high enough to believe that this is the future of clinical DNA testing is a big help. In this paper, we do DNA Sensor accuracy is considered quite good, then do improve with experience measured opposite the previously mentioned methods are possible.
Li, Bo-Wei y 李柏緯. "Photocatalyses of Zinc Oxide Nanotip/Titanium Oxide Film Heterojunctions". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/69527432345800335229.
Texto completo國立中山大學
電機工程學系研究所
98
The length of ZnO nanotip can be controlled by the deposition time, and the crystal of ZnO nanotip can be enhanced by a thermal annealing at 300oC in this study.The thickness of TiO2 on ITO/glass also can be controlled by the deposition time in this investigate. There are three major parts in this study : 1. (1). The control of thickness of TiO2 film and length of ZnO nanotip and (2). the difference of their photocatalytic activities are two major parts. 2. The relationship between the surface area and the photocatalytic activities of TiO2 powder (P25) and film. 3. The improvement of photocatalytic activity was utilized by the hetrojunction of ZnO nanotip/TiO2 and TiO2/ZnO nanotip, and the P25 is used as a reference for all measurements.
Yang, Chi-Chum y 楊啟全. "Studies of Modified Titanium oxide Electrodes". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/nq86x6.
Texto completo國立虎尾科技大學
光電與材料科技研究所
94
The paper relates to a process for producing a metal probe tip having a sharp point. A computer controlled instrument and reversed dip etching process characterizes the tip while in formation and reliably produces tips having a radius of curvature of approximately 10μm. In the paper, the position of the metal wire during the reversed-dip-etching operation is mechanically controlled while the etching solution is monitored. A new pH sensor based on a novel oxidized titanium electrode is prepared and its characteristics discussed as well. Titanium electrodes were anodized in DMSO organic solution by applying DC voltages (6V~160V) to form various titanium oxide thin films. The dry (stored in dry air) anodized titanium electrode has a super-Nernstian response with a slope of 66.0 mV/pH unit, and the wet (stored in 4M KCl solution) anodized titanium electrode has a near Nernstian response with a slope of 59.0 mV/pH unit. Responses over a pH range 2 ~ 12 are linear. A self-assembled Prussian blue (PB) on titanium microelectrode with modified Nafion is described. The modified electrode showed high sensitivity when used in the determination of potassium ion concentration. It can effectively eliminate the interference of H+ ion after coated PB with modified Nafion. This electrode can be used in the determination of the time since death (postmortem interval, PMI).
Guo, Hsin-Yi y 郭幸宜. "Anodic Deposition of Ruthenium Oxide-Titanium Oxide Composites for Supercapacitors". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/16584639397135321058.
Texto completo國立中正大學
化學工程所
97
The first method was anodic deposition of hydrous ruthenium oxide on Ti substrates. These pretreated Ti substrates were dip-coated different weight of TiO2 films with prepared by a hydrothermal process. The second method was anodic composite deposition of RuO2.xH2O-TiO2 on Ti substrates. We discussed these methods in the application of supercapacitors in this route. Through dip-coated different weight ratio of titanium oxide、annealed at different temperature、added different concentration of titanium(III) chloride solution and grew different loading of oxide analyzed the textural and electrochemical characterization. The textural characterization were analyzed through field emission scanning electron microscopy(SEM)、Raman spectroscopy、X-ray diffraction(XRD) and transmission electron microscopy(TEM). The electrochemical characterization were analyzed through cyclic voltamograms、reversibility、chronopotentiograms、different scan rate and stability. In chapter 3, titanium(III) chloride was used as the precursor to prepare rutile-titanium oxide via a hydrothermal process. The additive, sodium dodecyl sulfate (SDS), could improve the dispersive of TiO2 samples. RuO2.xH2O films were electroplated at 1.0 V from a 10 mM RuCl3.xH2O and NaAcO solution on Ti substrates dip-coated different weight ratio of titanium oxide. With the weight ratio of RuO2/TiO2 ascending, the morphologies of layer by layer accumulation were obvious. It was helpful for the penetration of electrolytes. After annealed at different temperature, it was enhanced electron transports. When the weight ratio of RuO2/TiO2 was ca. 1:6.5 and annealed at 150℃, its best specific capacitance was 1094 Fg-1. After 200 cycles of cyclic voltammograms, the decay ratio of specific capacitance was about 4∼5%, it was very suitable for supercapacitors. In chapter 4, TiO2 nanoflowers in the rutile phase were synthesized from a 50 mM TiCl3 solution purged with air at 25℃. This solution was mixed with an equal volume RuCl3.xH2O and NaAcO solution to form the deposition bath containing TiO2 nanoflowers, 10 mM RuCl3.xH2O, and 10 mM NaAcO. The morphologies of RuO2.xH2O- TiO2 nanocomposites were much rougher than RuO2.xH2O deposits. From the composition of Ru and Ti at the cross section, it indicated that the RuO2.xH2O and TiO2 nanoflowers were continuous composite-deposition and no gradient distribution. In addition, The RuO2.xH2O and TiO2 nanoflowers were the nanometer-mixed level through the elemental mapping analysis under the TEM mode. With the concentration of titanium(III) chloride solution ascending, the current responses were increased, resulting in the good utilization of the RuO2.xH2O- TiO2 electrode. When the concentration of titanium(III) chloride solution was 50mM and annealed at 200℃, its best specific capacitance was 543 Fg-1. Electroplating RuO2.xH2O-TiO2 nanocomposites, so these active material had a few effect on the loading of oxide. While the loading of oxide was ca. 0.91 mg, the capacitive current density is quasi-linearly dependent on the scan rate of CV for RuO2.xH2O-TiO2 nanocomposites. The excellent power characteristics of RuO2.xH2O-TiO2 nanocomposites were demonstrated in this work. These properties were ideal for the application of supercapacitors, indicating that these RuO2.xH2O-TiO2 nanocomposites were the potential materials for supercapacitors.
Chen, Hong-Zhi y 陳宏志. "Interfacial Reactions between Titanium and Titanium Dioxide/ Calcium Oxide/Yttriia Composites". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/39125656630823793576.
Texto completo國立交通大學
材料科學與工程學系奈米科技碩博士班
103
Vanious proportions of TiO2 / CaO / Y2O3 powders were mixed and hot pressed at 1500°C for 30min. These hot-pressed specimens reacted with the commercially pure titanium at 1600°C for 30min in 1 atm argon atmosphere. The high temperature interfacial reactions were explored between each ceramic specimen and titanium metal. The interface microstructures were analyzed using an X-ray diffraction diffractometer (XRD) and an analytic scanning electron microscope (ASEM). When ceramic specimens reacted with titanium at 1600°C for 30min, the oxygen would be dissolved to the titanium to form α-Ti due to the great affinity between oxygen and titanium, resulting in the hypoxia phenomenon in the ceramic side near the interface. In the Ca4Ti3O10 specimens incorporating with Y2O3, Y2O3 formed network in the interior ceramic specimens with the volume ratio of Y2O3 was more than 20%. When the ceramic specimens reacted with titanium, Y2O3 would diffuse to the interface due to ambipolar diffusion, the titanium would diffuse to the ceramic side and the oxygen in Y2O3 would be dissolved to the titanium side, so that, a Y2O3-y and α-Ti layer was formed. With increasing in the amount of Y2O3, the layer would be thicker. The Y2O3 phase in the far away from interface would be coarser.
Chung, Chih-Yuan y 鍾志遠. "Properties of titanium oxide thin films prepared with different substrate (titanium/platinum/glass/indium tin oxide glass)". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/34387357881264765166.
Texto completo國立高雄海洋科技大學
輪機工程研究所
97
Abstract This paper aims to characterize the photoelectrochemical properties of the visible-light enabling titanium dioxide (TiO2) film electrodes prepared with different substrate (titanium/platinum/glass/indium tin oxide glass) using a direct current (DC) magnetron sputtering technique. Structural properties characterized by X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM) showed typical polycrystalline structure with primary anatase phase along with elongated pyramid-like grains lying on the film surface and densely packed columnar structure from cross-sectional profile. To improve its photoelectrochemical properties, under ultraviolet (λ~365 nm) illumination, the TiO2/Pt film electrode also exhibits the highest photocurrent density of 150 μA/cm2 among all samples tested. TiO2/ITO film has the best photocatalytic activity on MB degradation with the rate-constant of about 0.597 h−1. Keywords: titanium dioxide; ultraviolet; photocurrent
Kao, Chen-Yu y 高振祐. "Preparation and Applications of Zinc Oxide Nanotip and Titanium Oxide Heterojunction". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/rat4a8.
Texto completo國立中山大學
電機工程學系研究所
101
Photocatalytic activity of ZnO nanotip is low. To improve this condiction, ZnO nanotip growing on TiO2 film can form heterojunction which make life-time longer and enlarge the area to enhance the photocatalytic activity. This is due to the high reactivity of TiO2 and the large binding energy of ZnO, which improve the process of electron and hole transfer between the corresponding conduction and valence bands. In conclusion, the heterostructure of ZnO nanotip/TiO2 film and ZnO nanotip/N-F co-doped TiO2 nanoparticle were prepared by aqueous solution deposition (ASD). TiO2 films are inexpensive, chemically stable and harmless, and have no absorption in the visible region. Therefore, N-F co-doped TiO2 nanoparticle is in order to adjust the titanium dioxide the light to absorb the boundary (optical absorption edge), hoping to enhance the absorption of photoenergy. In this heterojunction configuration, several advantages can be obtained: (1) an improvement of charge separation (2) an increase in the lifetime of the charge carrier (3) an enhancement of the interfacial charge transfer efficiency to adsorbed substrate. In our research, heterojunction of ASD-ZnO nanotip on ASD-TiO2 thin film or ASD-N-F co-doped TiO2 nanoparticle show higher photocatalytic activity.
CHEN, WEI-JIE y 陳偉傑. "Photoelectrochemical Cathodic Protection for Anticorrosion by Titanium Oxide and Indium Oxide". Thesis, 2019. http://ndltd.ncl.edu.tw/handle/dqb5zr.
Texto completo明志科技大學
化學工程系碩士班
107
The hazards of corrosion are well known, so a variety of anti-corrosion methods have been developed. Among these methods, photoelectrochemical cathodic protection is a low-consumption and environmentally friendly method. In this study, a slurry composed of by indium oxide and titanium dioxide was prepared. In which, polyacrylic acid and ethyl cellulose were used for adhesive, respectively. The slurry was coated on tin oxyfluoride (FTO) to form an oxide semiconductor film, and the film can provide photoelectrochemical cathodic protection of 304 stainless steel. In our experiment, a 3.5 wt.% sodium chloride solution was used to simulate the seawater environment and to investigate the corrosion of stainless steel. 0.1 M EDTA-2Na is found as a hole trapping agent in the anode region, effectively increasing the protection potential difference and delaying the potential recovery after lamp power off. It is also indicated that coating pure titanium dioxide or a composite oxide could prevent from corrosion, but adding of indium oxide can improve the protection potential difference under white light irradiation. Our study found that the most suitable compound ratio was titanium dioxide: indium oxide is 0.95:0.05, which can provide the maximum potential shift for 304 stainless steel.
Kao, Chung-ho y 高仲和. "Phase Transformations of Titanium Oxide Nano Film". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/40651671053313256076.
Texto completoLin, Cheng-Feng y 林正豐. "Preparation and Photocatalysis of Nanocrystalline Titanium Oxide". Thesis, 2001. http://ndltd.ncl.edu.tw/handle/25432243651171322284.
Texto completo國立臺灣大學
化學工程學研究所
89
Abstract In this study, we synthesize nanocrystalline titanium dioxide (U-TiO2)which has larger specific surface area than commercial TiO2 by using sol-gel method. In addition, specific surface area will increase because of its inhibition of crystallite growth via HMDS treatment(H-TiO2). Photocatalytic decomposition of water, methyl orange, and alcohol solution were investigated. Although the resulted powders after HMDS treatment have large specific surface area, they performed inferior photocatalytic activity to fresh titanium dioxide powders which have smaller specific surface area than H-TiO2. It is suggested that H-TiO2 decomposed via calcinations process and gave SiO2 particles along the grain boundaries. The photocatalytic activity decreased results from the presence of SiO2 particles in H-TiO2. In addition, we try to increase the photocatalytic activity of titanium dioxide by doping copper. The three different loading methods in our study is:1. vapor phase reaction method(VPR), 2. add some CuCl2˙2H2O in TiO2 sol(Sol+Cu), and 3. method of incipient wetness impregnation(Impregnation), respectively. All three methods show increased photocatalytic activity and titanium dioxide has the best photocatalytic activity by using the impregnation method.
Yang, Te-min y 楊德敏. "Titanium oxide modification:Anode of lithium-ion battery". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/62356119401982090388.
Texto completo國立中央大學
化學研究所
99
power two requirements. The purpose of this research was to enhance the output power of lithium-ion battery and to make it more suitable for high power electrical. The traditional lithium-ion battery anode material - meso carbon micro beads (MCMB) demonstrates poor performance under high current charging / discharging. Nano titanium dioxide is a promising anode material for high power lithium-ion battery. However, the low electronic conductivity (10-9 to 10-7 S / cm) and low lithium ion diffusion rate (10-15 to 10-13 cm2 / s) makes it difficult to implement. Current research explores two designs to overcome these shortcomings. The first method is to enhance the electronic conductivity of active material which expedite the charge transfer. The goal is reached by doping titanium nitride with Titania oxide nano-particle. The structure not only raised the conductivity by three orders of magnitude, it also shows much better columbic efficiency. Titanium dioxide blends with titanium nitride also enhanced the lithium ion diffusion coefficient; therefore on the 10C (3.35A/g) current charging / discharging still retain 35mAh / g of capacity. The second design aims at increasing the surface area of the active material which improves the amount of lithium-ion intercalation. The goal is achieved by phosphatization of the titanium dioxide nanoparticle, which inhibits the growth of the crystalline domain and preserved higher active surface area. As a result, the discharging capacity in lithium-ion battery increases. Discharging capacity of the first cycle reached 250 mAh/g. Unfortunately, phosphatization of titanium dioxide created more amorphous region by reducing the anatase crystalline. Therefore, the reversibility in lithium-ion insertion / extraction is poor. In slow CV test we conclude that the surface area and the crystallite size affected both the amount of lithium-ion insertion and degree of polarization. Active material with high surface area (or smaller crystal size) shows faster lithium-ion diffusion rate but the polarization is not as obvious. Therefore, the battery shows better high-rate performance.
Tsai, Min-Chiao y 蔡旻橋. "Titanium Oxide Related Materials - Syntheses and Applications". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/82782805810217922991.
Texto completoXu, Shao-Da y 許紹達. "Synthesis of titanium oxide film by plasma chemical vapor deposition of titanium tetrachloride". Thesis, 1990. http://ndltd.ncl.edu.tw/handle/52305229713581971716.
Texto completoChang, Hung-Jui y 張宏睿. "Investigation of Titanium oxide/ Copper (II) oxide photo-electrode for water splitting". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/21351538217747279794.
Texto completo元智大學
先進能源研究所
98
The electronic property of TiO2/CuO heterojunction thin film is better than TiO2 mix CuO thin film, and under 500nm wavelength irradiation can detect a current. Photoelectrode produced from Titanium dioxide, Titanium dioxide mix Copper(II) oxide, and Titanium dioxide/ Copper(II) oxide, were investigated and the characteristics, such as optical properties, electronic and optical conversion to electronic at electrolyte. Photoelectrode thin films were developed on ITO (Indium Tin Oxide) glass substrates by doctor-blade deposition techniques. Titanium dioxide and copper compounds were used to the main materials for slurry. Using light irradiation to activate photoelectrode, TiO2 can be a photoanode. TiO2 mix CuO, CuO, and TiO2/CuO heterojunction thin film can be a photcathode. Photoelectrode produced by TiO2 mix CuO have a large electric resistance.
Fan, Cho-Han y 范卓涵. "Study of Titanium Oxide and Nickel Oxide Films by Liquid Phase Deposition". Thesis, 2011. http://ndltd.ncl.edu.tw/handle/48561656296350551733.
Texto completo國立中山大學
電機工程學系研究所
100
An uniform titanium oxide film was grown on indium tin oxide/glass substrate with the aqueous solutions of ammonium hexafluoro-titanate and boric acid. The as-deposition titanium oxide film shows good electrochromic property because of fluorine passivation on defects and dangling bonds. The transmittance of as-grown titanium oxide on indium tin oxide/glass with a thickness of 270 nm is about 85% at the wavelength of 550 nm. By 50 times electrochromic cycling test, the transparency ratio of TiO2 film is kept at 45% between fully colored state and fully bleached state at the wavelength of 550 nm. Under ultraviolet illumination, the growth of titanium oxide film grown is enhanced. The root mean squared value of surface roughness is improved from 3.723 to 0.523 nm. Higher fluorine concentration from (NH4)2TiF6 passivate defects and dangling bonds of titanium oxide during the growth. After 50 times electrochromic cycling test, the transparency ratio UV-TiO2 is improved from 37.5% to 42.4% at the wavelength of 550 nm. The electrical characteristics of nickel-doped titanium oxide films on p-type (100) silicon substrate by liquid phase deposition were investigated. For nickel doping, the nickel chloride was used as the doping solution and the electrical characteristics were improved. After thermal annealing in nitrous oxide at 700 oC, the dielectric constant of polycrystalline titanium oxide film is 29 and can be improved to 94 with nickel doping. Uniform nickel oxide film was grown on a conducting glass substrate with the aqueous solution of saturated NiF2‧4H2O solution and H3BO3. The quality of NiO is improved after thermal annealing at 300 oC in air from the decrease of oxygen vacancy and better F ion passivation on defects and dangling bonds. The transmittance of as-deposited NiO/ITO/glass with a thickness of 100 nm is about 78% and improved to 88% after annealing at the wavelength of 550 nm. By the electrochromic cycling test 50 times on annealed NiO film, the transparency ratio is kept at 48% between fully colored state and fully bleached state at the wavelength of 550 nm. By the memory time test, the annealed LPD-NiO film has shorter memory time. The growth of nickel oxide film grown on indium-tin oxide/glass substrate by liquid phase deposition is enhanced under ultraviolet photo-irradiation was studied. a-Ni(OH)2 dominates the composition of as-grown NiO film. After thermal treatment at 300 oC,a-Ni(OH)2 is transformed into NiO. For thermally treated NiO under ultraviolet photo-irradiation, the recrystallization and the colored and bleached transmittance after 50 times electrochromic test were improved. Both improvements come from fluorine passivation. Transparent and conductive thin films consisting of p-type nickel oxide (NiO) semiconductors were prepared by liquid phase deposition. A resistivity of 8 x 10-1 -cm was obtained for NiO films prepared at liquid phase deposition. The transmittance of NiO is almost 70 % in the 550 nm wavelength was obtained for a 384.3 nm thick NiO film.
Chen, Hao y 陳豪. "Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/ggp92v.
Texto completo國立中山大學
電機工程學系研究所
102
Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs), indium phosphide (InP), indium gallium arsenide (InGaAs)) high-speed devices. The high-k material TiO2 not only has high dielectric constant (k =35-100) but also has well lattice match with GaAs, InP and InGaAs substrate. Therefore, titanium oxide (TiO2) was chosen to be the gate oxide in this study, and aluminum oxide (Al2O3) has high bandgap (Eg~9eV) and self-cleaning capability, we use TiO2 and Al2O3 stack layers to decrease leakage currents and increase capacitance. The major problem of III-V compound semiconductor is known to have poor native oxide on it leading to the Fermi level pinning at the interface of oxide and semiconductor. The C-V stretch-out phenomenon can be observed and the leakage current is high. Use atomic layer deposition (ALD) system to grow stack double layers ALD-TiO2 and ALD-Al2O3 films on III-V substrate by high-k of TiO2 and high bandgap and self-cleaning capability of Al2O3 to reduce only one layer’s defect. The surface passivation of III-V with (NH4)2S treatment (S-III-V) could prevent it from oxidizing after cleaning and improve the interface properties of MOSFET. The leakage current of sulfur passivation can be improved. The leakage current densities are 7.31 x 10-7, 3.11 x 10-6 and 7.40 x 10-7 A/cm2 at ±2.0MV/cm, respectively. The (NH4)2S is necessary to passivation III-V surface form S-thin film of fabrication of III-V devices.