Artículos de revistas: "Tin-oxygen"

1

Okamoto, H. "O-Sn (Oxygen-Tin)". Journal of Phase Equilibria & Diffusion 27, n.º 2 (1 de abril de 2006): 202. http://dx.doi.org/10.1361/154770306x97740.

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2

Okamoto, H. "O−Sn (Oxygen-Tin)". Journal of Phase Equilibria and Diffusion 27, n.º 2 (marzo de 2006): 202. http://dx.doi.org/10.1007/s11669-006-0063-6.

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3

Wang, Sheng y Teruo Hori. "Oxygen evolution sensitized by tin porphyrin in microheterogeneous system and membrane systems". Journal of Porphyrins and Phthalocyanines 07, n.º 01 (enero de 2003): 37–41. http://dx.doi.org/10.1142/s1088424603000069.

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Tin porphyrin ( SnTPP ) was applied to two new types of photoinduced oxygen evolution systems by visible light irradiation. In microheterogeneous system, tin porphyrin was dispersed by a nonionic surfactant and the system could efficiently oxidize water to evolve oxygen when compared with the conventional system. In addition, two types of tin porphyrin fixed PVC membranes, porous and homogeneous, were prepared and applied to a photoinduced oxygen evolution membrane system. SEM images of two types of tin porphyrin fixed PVC membranes also show differences in both morphologies.

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4

Raghavan, V. "Fe-O-Sn (Iron-Oxygen-Tin)". Journal of Phase Equilibria and Diffusion 31, n.º 4 (21 de abril de 2010): 372. http://dx.doi.org/10.1007/s11669-010-9715-7.

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5

Ivanov A. F., Egorov F. S., Platonov N. D., Matukhin V. L. y Terukov E. I. "Influence of the oxygen during the deposition of an indium tin oxide thin film by magnetron sputtering for heterojunction solar cells". Semiconductors 56, n.º 3 (2022): 225. http://dx.doi.org/10.21883/sc.2022.03.53063.9747.

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Optoelectronic properties of indium and tin oxide thin films depending on the oxygen content in the total gas flow were experimentally investigated during deposition of these films by DC magnetron target sputtering. Relationship of the heterojunction thin-film solar cell output parameters vs. oxygen partial pressure in a vacuum vessel was examined during indium and tin oxide layer deposition. The maximum photovoltaic conversion efficiency of the solar cell was achieved at an oxygen partial pressure in the vacuum vessel of ~6.5 Torr. Keywords: heterojunction thin-film solar element, indium and tin oxide, magnetron sputtering.

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6

Wu, Xiao Wen, Jian Xin Zhang, Yang Wang y Amin Huang. "Structure and Properties of Ti/TiN/Sb-SnO₂ Electrodes with Plasma Sprayed TiN Interlayer". Advanced Materials Research 602-604 (diciembre de 2012): 1613–16. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1613.

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In this paper, TiN coating as an interlayer was fabricated on Ti substrate by reactive plasma spray. Ti/TiN/Sb-SnO2 electrodes were prepared by SOL-GEL method and the influence of the TiN interlayer on the structure, oxygen evolution potential and service life of the electrodes was studied. It was shown that the surface of the Ti/TiN/Sb-SnO2 electrodes is more homogeneous and the oxygen evolution potential and accelerated life are both higher than those of the Ti/Sb-SnO2 electrodes.

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7

Laimböck, Paul. "In-Line Oxygen Sensors for the Glass Melt and the Float Bath". Advanced Materials Research 39-40 (abril de 2008): 443–46. http://dx.doi.org/10.4028/www.scientific.net/amr.39-40.443.

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In-line oxygen sensors have been developed for the glass melt and for the float bath. Glass melt oxygen sensors are used for the continuous monitoring of the oxidation state (or redox) of the glass melt and are very important for the control of many glass melt and glass product properties such as radiative heat transfer, fining, foaming, forming and optical characteristics. Too high oxygen levels in the float bath can be prevented by using both oxygen sensors in the tin melt and the atmosphere above it. Oxygen related defects on the glass sheet surface such as dross, tin pick-up, bloom and tin drips are reduced or even prevented. Moreover, expensive hydrogen gas can be saved by a more effective dosage.

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8

Reuter, Hans y Hilko Wilberts. "On the structural diversity anions coordinate to the butterfly-shaped [(R2Sn)3O(OH)2]2+ cations and vice versa". Canadian Journal of Chemistry 92, n.º 6 (junio de 2014): 496–507. http://dx.doi.org/10.1139/cjc-2013-0517.

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The syntheses and crystal structures of [(t-Bu2Sn)3O(OH)2]CO3·3MeOH, 1a, [(t-Bu2Sn)3O(OH)2]CO3·3H2O·acetone, 1b, [(t-Bu2Sn)3O(OH)2][I]2·[(t-Bu2Sn(OH)I]2·2DMSO, 1c, and [(Cy2Sn)3O(OH)2][I]2·2DMSO, 2a, all containing the trinuclear [(R2Sn)3O(OH)2]2+ ion have been described. The butterfly shape of this cation is derived from two annulated, four-membered tin–oxygen rings with a central μ3-oxygen atom and trigonal-bipyramidally coordinated tin atom both belonging to both rings and two μ2-hydroxyl groups and two outer, four-fold coordinated tin atoms. In 1a and 1b, the carbonate anions interact with the outer tin atoms of the cations as bidentate chelating ligands in the classical syn–syn coordination mode, and vice versa. In this way, both outer tin atoms expand their coordination sphere from four to five, with the consequence that bond angles and lengths within the cation are determined by the axial and equatorial position of the oxygen atoms within the trigonal-bipyramidal coordination on all three tin atoms. 1c consists of two different building units, an up to now unknown hydroxide iodide of composition [(t-Bu2Sn(OH)I]2 with hydrogen-bonded DMSO molecules and a [(t-Bu2Sn)3O(OH)2]2+ cation with one coordinated and one isolated, via hydrogen bonds connected iodine ion. The hydroxide iodine is built up of two five-fold coordinated tin atoms linked via two hydroxyl groups with exocyclic iodine atoms occupying axial positions at the trigonal-biypramidally coordinated tin atoms. The unprecedented coordination of the iodine ion to the [(t-Bu2Sn)3O(OH)2]2+ cation takes place between both outer tin atoms, resulting in a five-fold, trigonal-bipyramidal coordination at these tin atoms, too. Structural parameters within the so-formed [(t-Bu2Sn)3O(OH)2I]+ complex are very similar to those of 1a and 1b, with the exception of a significant lengthening of the tin–oxygen bonds opposite to the bridging iodine atom. 2a represents the first example of the [(R2Sn)3O(OH)2]2+ cation without R = t-butyl, so far. In the solid, it consists of two crystallographic independent [(Cy2Sn)3O(OH)2][I]2 building units, each connected to two DMSO molecules via hydrogen bonds. Both building units are very similar with respect to their conformation. Each of the iodine anions coordinates with only one of the two outer tin atoms, one in an inwards, one in an outwards to the tin-oxygen framework directed position. These tin atoms are therefore also trigonal-bipyramidally coordinated as in 1a−1c, but because of steric reasons one of the trigonal-bipyramids has changed its orientation within the tin–oxygen framework, accompanied by enormous changes of bond lengths and angles therein.

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9

Moatti, A., R. Bayati, S. Singamaneni y J. Narayan. "Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure". MRS Advances 1, n.º 37 (2016): 2629–34. http://dx.doi.org/10.1557/adv.2016.463.

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ABSTRACTIn this study, we provide a novel approach to the epitaxial integration of TiO2 with Si(100) and investigate the defect mediated ferromagnetism in TiO2 structure. Epitaxial TiO2 thin films were grown on a TiN/Si(100) epitaxial heterostructure through oxidation of TiN where a single crystalline rutile-TiO2 (r-TiO2) with a [110] out-of-plane orientation was obtained. The epitaxial relationship is determined to be TiO2(1$\bar 1$0)||TiN(100) and TiO2(110)||TiN(110). We rationalized this epitaxy using the domain matching epitaxy paradigm. First TiN is grown epitaxially on Si(100). Subsequently, TiN/Si(100) samples are oxidized to create r-TiO2/TiN/Si(100) epitaxial heterostructures. The details of the mechanism behind the oxidation of single crystalline TiN to TiO2 was investigated using atomic scale high resolution electron microscopy techniques. Defects introduced to the heterostructure during oxidation caused ferromagnetism in TiO2 thin film which is reversible and can be tuned by controlling oxygen partial pressure. The source of magnetization is correlated with the presence of oxygen vacancy leading to introduction of two localized states; hybrid and polaron among neighboring Ti atoms, and titanium vacancy providing four holes to form molecular oxygen. We present structure property correlations and its impact on the next generation solid state devices.

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10

Beensh-Marchwicka, Grazyna y Lubomila Krol-Stepniewska. "Reproducibility of Properties of SnOxThin Films Prepared by Reactive Sputtering". ElectroComponent Science and Technology 11, n.º 4 (1985): 271–80. http://dx.doi.org/10.1155/apec.11.271.

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The preparation of tin dioxide films by low energy reactive sputtering of tin and tin-antimony (1-10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the range from 0 to 50%, target compositions, substrate temperature of 300 K-573 K on minimum resistivity at satisfactory transmittance and on reproducibility are discussed. The correlation between the electrical and optical properties and the microstructure of the films is shown.

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11

Choi, Jaewon, Wonjin Jeon, Dongjin Kang, Doowon Kang y Jungyol Jo. "Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates". Coatings 9, n.º 4 (17 de abril de 2019): 255. http://dx.doi.org/10.3390/coatings9040255.

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Titanium nitride (TiN) has mechanical and electrical characteristics applicable for very large scale integration (VLSI) and discrete electronic devices. This study assessed the effect of hydrogen on sputtering growth of TiN on ceramic substrates. Although ceramic substrate is used in discrete device applications due to its insulating property, ceramic is also porous and contains oxygen and water vapor gases, which can be incorporated into TiN films during growth. In addition, discrete devices are usually packaged in glass sealing at 700 °C, and reaction with the trapped gases can significantly degrade the quality of the TiN film. In order to evaluate ways to minimize the effects of these gases on TiN, hydrogen gas was introduced during sputtering growth. The main hypothesis was that the hydrogen gas would react with oxygen to lower the oxygen density in the vacuum chamber, which would suppress the effects of the trapped gases in the ceramic and ultimately improve the quality of the TiN film. Improvements in TiN quality were confirmed by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and resistance measurements. During the glass-sealing process, N2-purging at 400 °C was effective at keeping the TiN in a low resistance state. These results show that introducing hydrogen gas during sputtering growth could solve the problems caused by ceramic substrates.

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12

Lyutov, Dimitar, Plamen V. Petkov, Nasko Gorunski, Boyan Todorov y Hristo Iliev. "Investigation of selected materials stability for future application in development of small fast modular reactors (SFMR)". MATEC Web of Conferences 387 (2023): 05002. http://dx.doi.org/10.1051/matecconf/202338705002.

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Currently, there is growing demand for cheap and reliable electricity production. One possible solution could be the construction of small modular fast neutrons nuclear reactors, where the reactor core cooling fluid is a suitable liquid metal. Liquid tin has significant advantages over the other potential candidates but its usage as coolant is challenging for the confining materials ensuring the nuclear safety of the future reactors. Current paper presents an investigation of structural materials stability in liquid tin with measurement of the surface tension, based on “Wilhelmy plate” method. The results are related to stability of spring steel, iron, nickel and copper, used as dipping plates as well as oxygen/liquid tin interactions when melted tin is exposed to air. The reported custom apparatus in our previous studies, was improved and its measuring capability was enhanced in order to demonstrate reliable results at low cost. Theoretical analysis is provided in order to demonstrate the reliability of the presented approach. Main results include: (1) Determination of liquid tin surface tension in case of air oxygen/tin reaction in liquid surface; (2) Investigation of measuring plate degradation and calculation of solution rate constant in case of dipped a plate made by copper; (3) Determination of Butler’s equation parameters in case of surface oxygen/tin interactions.

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13

Huang, Amin, Jian Xin Zhang, Xiao Wen Wu y Yang Wang. "Structure and Performance of Ti/TiN/PbO₂Electrodes with Plasma-Sprayed TiN Interlayer". Applied Mechanics and Materials 325-326 (junio de 2013): 40–42. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.40.

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TiN coating as an interlayer in Ti/TiN/PbO2 electrode and PbO2 catalytic layer were fabricated by reactive plasma spray and electro-deposition, respectively. It is shown that because of good effect of the TiN interlayer, the Ti/TiN/PbO2 electrode exhibits a higher oxygen evolution potential and much improved accelerated life compared with the Ti/PbO2 electrode.

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14

Agbede, Oluseye O., G. H. Kelsall y K. Hellgardt. "A novel molten tin reformer: Kinetics of oxygen dissolution in molten tin". Chemical Engineering Science 231 (febrero de 2021): 116273. http://dx.doi.org/10.1016/j.ces.2020.116273.

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15

Karami, Hassan y Somayyeh Babaei. "Application of Tin Sulfide-Tin Dioxide Nanocomposite as Oxygen Gas-Sensing Agent". International Journal of Electrochemical Science 8, n.º 11 (noviembre de 2013): 12078–87. http://dx.doi.org/10.1016/s1452-3981(23)13245-7.

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16

Wen, Shijie, G. Campet y J. Portier. "Influence of Thermal Treatment Under Various Oxygen Pressures on The Electronic Properties of Ceramics and Single Crystals of Pure and Tin-Doped Indium Oxide". Active and Passive Electronic Components 14, n.º 4 (1992): 191–98. http://dx.doi.org/10.1155/1992/56168.

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The different electronic behaviors of pure and tin-doped indium oxides with various thermal treatments under high and low oxygen pressure are discussed on the basis of the evolution of the band energy diagram. A critical concentration of “active oxygen vacancies” associated with donor centers is necessary to achieve high electronic mobility in ITO (Indium Tin Oxide).

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17

Zhu, Dongsheng, Wanli Kang, Dewen Dong, Qun Liu y Lin Xu. "A Novel Macrocyclic Dimeric Dicarboxylato Distannoxane Assembled from a Flexible Dicarboxylic Acid". Journal of Chemical Research 2007, n.º 10 (octubre de 2007): 577–79. http://dx.doi.org/10.3184/030823407x255524.

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The novel macrocyclic complex [(Bu2Sn)2OL]2•CH3CN (2) has been prepared from the flexible dicarboxylic acid, LH2, (1). Single crystal X-ray diffraction shows that complex 2 has a centrosymmetric structure, with a central rhomboid cyclic Bu4Sn2O2 unit, linked at the oxygen atoms to two exocyclic tin atoms. The dicarboxylate ligands bridge exocylic and endocyclic tin atoms, completing two rings each of 22 atoms, and two of the four carbonyl oxygen atoms coordinate to the exocyclic tin atoms, to raise their coordination state to five and complete two more six-membered, rings.

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18

Itoh, Satoshi, Hiroki Osamura y Kimihiko Komada. "Thermodynamics of Indium-Tin-Oxygen Ternary System". MATERIALS TRANSACTIONS 52, n.º 6 (2011): 1192–99. http://dx.doi.org/10.2320/matertrans.m-m2011806.

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19

Khirunenko, Lyudmila I., Yu V. Pomozov y Mikhail G. Sosnin. "Oxygen Precipitation in Silicon Doped with Tin". Solid State Phenomena 82-84 (noviembre de 2001): 111–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.82-84.111.

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20

Kamp, B., R. Merkle y J. Maier. "Chemical diffusion of oxygen in tin dioxide". Sensors and Actuators B: Chemical 77, n.º 1-2 (junio de 2001): 534–42. http://dx.doi.org/10.1016/s0925-4005(01)00694-3.

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21

HARRISON, P. G. "ChemInform Abstract: Transformations Involving Tin-Oxygen Bonds". ChemInform 23, n.º 42 (21 de agosto de 2010): no. http://dx.doi.org/10.1002/chin.199242256.

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22

Ungureanu, Ana-Maria, Ovidiu Oprea, Bogdan Vasile, Corina Andronescu, Georgeta Voicu y Ioana Jitaru. "Temperature effect over structure and photochemical properties of nanostructured SnO2 powders". Open Chemistry 12, n.º 9 (1 de septiembre de 2014): 909–17. http://dx.doi.org/10.2478/s11532-013-0400-7.

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AbstractWe successfully synthesized tin dioxide nanoparticles with polyhedral morphology via an ethylene glycol assisted sol-gel approach. The structural characteristics of three tin dioxide samples were investigated after being thermally treated at 400°C, 600°C and 800°C. X-ray diffraction (XRD) patterns clearly show the formation of single phase tin dioxide nanoparticles, with crystallite size of 6–20 nm, in good correlation with Fourier transform infrared (FTIR) spectra. Transmission electron microscopy (TEM) analysis confirms the formation of 6nm polyhedral nanoparticles for the 400°C sample. Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectra suggest a high concentration of oxygen vacancies. The oxygen vacancy concentration increases with temperature, due to the combined action of the formation of VO and the energetic O compensation. X-ray photoelectron spectroscopy (XPS) analysis also confirms the formation of single phase tin dioxide and the presence of oxygen vacancies in good agreement with UV-VIS and PL data.

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23

Han, Dongsuk, Jaehyung Park, Minsoo Kang, Hyeongtag Jeon y Jongwan Park. "Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping". Journal of Nanoscience and Nanotechnology 15, n.º 10 (1 de octubre de 2015): 7606–10. http://dx.doi.org/10.1166/jnn.2015.11155.

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We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 108.

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24

Abdul Basyir, Abdul Basyir, Robby Kurnia Robby Kurnia, Cherly Firdharini Cherly Firdharini, Didik Aryanto Didik Aryanto, Wahyu Bambang Widayatno Wahyu Bambang Widayatno y Agus Sukarto Wismogroho Agus Sukarto Wismogroho. "Investigation of Effect of Various Hot Gas Atomisation and Melting Pot Temperatures on Tin Alloy Powder Product". Sains Malaysiana 51, n.º 9 (30 de septiembre de 2022): 3027–41. http://dx.doi.org/10.17576/jsm-2022-5109-23.

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This research investigates the effect of different types of hot gas atomisation (argon, nitrogen and oxygen) and melting pot temperatures on the particle size distribution, microstructure, density and phase of tin alloy (Sn-Cu-Ni-Ge) powder products. The tin alloy powder produced by hot argon gas atomisation had the greatest density (7.84 g/cm3) and the most spherical shape. While the tin alloy powder generated by hot oxygen gas atomisation had the lowest density (6.83 g/cm3), the highest endothermic area (60.41695 area unit) and the most elongated, irregular shape. Hot argon and nitrogen gas atomisation at a melting pot temperature of 800 °C produced a higher yield of 0-25 µm powder than at 700 °C. By contrast, hot oxygen atomisation produced the opposite result. However, all the powder products prepared at 800 °C had a higher spherical shape ratio in the range of 0-25 µm. Tin alloy powder produced by hot oxygen gas atomisation comprised only the elements of Sn and Cu, while the powder generated by hot argon and nitrogen gas atomisation consisted of elements such as the ingot of this powder.

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25

Чувенкова, Ольга Александровна, Николай Игоревич Бойков, Станислав Викторович Рябцев, Елена Владимировна Паринова, Ратибор Григорьевич Чумаков, Алексей Михайлович Лебедев, Дмитрий Смирнов et al. "Electronic structure and composition of tin oxide thin epitaxial and magnetron layers according to synchrotron XANES studies". Конденсированные среды и межфазные границы 26, n.º 1 (28 de febrero de 2024): 153–60. http://dx.doi.org/10.17308/kcmf.2024.26/11897.

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The materials of the tin-oxygen system and thin-film structures based on them are modern and actual for the creation of a wide range of electronic devices, for example, resistive gas sensors of high sensitivity and short response time with low energy consumption and high manufacturability. An important direction in the study of such materials and structures is the control of properties with variations in technological formation regimes. Information on the composition, local atomic and electronic structure of thin layers of the tin-oxygen system with varying approaches to their production is in demand. The work is devoted to the study of the electronic structure of thin layers of tin oxides obtained by modern methods of molecular beam epitaxy and magnetron sputtering. A study of the local partial density of electronic states in the conduction band by X-ray absorption near edge structure spectroscopy of tin and oxygen has been carried out. The data were obtained using high-intensity synchrotron radiation, which allows varying the monochromatized radiation quantum energy without loss in intensity, that is necessary to obtain high-resolution X-ray spectral data. It is shown that the composition, local atomic surrounding, electronic spectrum and their features depend on the technology of formation and storage conditions of the studied structures. Synchrotron X-ray spectroscopy data show the presence of intermediate oxides of the tin-oxygen system in the studied materials after prolonged storage in laboratory conditions. The data obtained indicate the possibility of controlled variation in the composition, local atomic surrounding and electronic spectrum of thin-film structures of tin oxides of small thickness. The results of the work can be used in the formation and subsequent modification of thin and ultrathin layers of tin oxides by magnetron sputtering and molecular beam epitaxy, as well as in their further application as active layers of microelectronics devices

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26

Geoffroy, C., G. Campet, F. Menil, J. Portier, J. Salardenne y G. Couturier. "Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets". Active and Passive Electronic Components 14, n.º 3 (1991): 111–18. http://dx.doi.org/10.1155/1991/85965.

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Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2or SnO2–SnF2mixtures, ceramics obtained by casting either an aqueous SnO2–SnF2slurry or a suspension of tin oxide in molten tin fluoride. The samples were prepared in oxygen-argon gas mixtures in which the oxygen concentration was varied from 0 mole % up to 30 mole% depending on the target. The optical and electrical properties of the obtained thin films have been studied and compared to those of the films obtained by spray technique.

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27

Becker, Martin, Angelika Polity, Davar Feili y Bruno K. Meyer. "Deposition of tin oxides by Ion-Beam-Sputtering". MRS Proceedings 1494 (2012): 153–58. http://dx.doi.org/10.1557/opl.2012.1650.

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ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

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28

Wang, Qi, Zhi Jian Peng, Yang Wang y Xiu Li Fu. "Deposition and Electrical Resistivity of Oxygen-Deficient Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Powers". Solid State Phenomena 281 (agosto de 2018): 504–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.504.

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A series of oxygen-deficient tin oxide thin films were deposited by radio frequency magnetron sputtering a sintered tin oxide ceramic target under pure argon atmosphere at different sputtering powers (80-160 w) under the based pressure of no more than 2.0×10-4 Pa, sputtering pressure of 2.0 Pa and deposition time of 20 min. It was revealed that all the as-deposited films were oxygen-deficient tin oxide films, and the main defect in films was oxygen vacancy (VO), whose concentration gradually decreased with the increase of sputtering power. The films prepared at a power of no more than 120 w were amorphous, and as the sputtering power increased to 140 and 160 w, the deposited thin films exhibited polycrystalline characteristics with (110), (101) and (211) diffraction peaks of tin oxide. The grain size, deposition rate as well as thickness of the obtained films rose up with increasing sputtering power. In addition, as the sputtering power raised, the electrical resistivity of the films increased, due to the electron conducting mechanism controlled by VO in the samples.

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29

Lin, Yichao, Minghui Guo, Jin Liu, Laijin Tian y Xicheng Liu. "Synthesis and structural characterization of the complexes of 2-(menthoxycarbonyl)ethyltin chloride". Main Group Metal Chemistry 42, n.º 1 (25 de mayo de 2019): 37–45. http://dx.doi.org/10.1515/mgmc-2019-0003.

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AbstractThe complexes of 2-(menthoxycarbonyl)ethyltin chloride, MenOCOCH2CH2SnCl3⋅L (Men = Menthyl, L = benzyl phenyl sulfoxide (bpSO), 1; 2,2’-bipyridine (bpy), 2; 1,10-phenanthroline (phen), 3) and [MenOCOCH2CH2SnCl2(OCH3)]2 (4), have been synthesized and characterized by means of elemental analysis, FT-IR, NMR (1H, 13C and 119Sn) spectra. The crystal structures of 1, 3 and 4 have been determined by single crystal X-ray diffraction. The tin atoms in 1-4 are all hexa-coordinated. The tin atom in 1 adopts a distorted [CSnCl3O2] octahedral geometry with an oxygen atom of the ligand and an intramolecular coordination of the oxygen atom from the carbonyl group to the tin atom. Complex 3 possesses a distorted [CSnCl3N2] octahedral geometry with two nitrogen atoms of a chelating phen ligand. The carbonyl oxygen atom of the ester moiety is not coordinating. Compound 4 is a centrosymmetric dimer with a four-membered Sn2O2 ring, and the tin atom has a distorted [CSnCl2O3] octahedral geometry with an intramolecular C=O→Sn coordination and intermolecular methoxy bridging.

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30

Mukhamedshina, D. M., A. I. Fedosimova, E. A. Dmitriyeva, I. A. Lebedev, E. A. Grushevskaya, S. A. Ibraimova, K. A. Mit’ y A. S. Serikkanov. "Influence of Plasma Treatment on Physical Properties of Thin SnO2 Films Obtained from SnCl4 Solutions with Additions of NH4F and NH4OH". Eurasian Chemico-Technological Journal, n.º 1 (20 de febrero de 2019): 57. http://dx.doi.org/10.18321/ectj791.

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This paper considers the effect of oxygen and hydrogen plasma on SnO2 films synthesized from solutions of tin tetrachloride containing NH4F and NH4OH additives. It was found that the treatment of samples with oxygen plasma for 5 min led to a decrease in transparency by 1.11 and 1.17 times. On the transmission spectra, a decrease in the transmittance at a wavelength of 450 nm to 38.1% (1.24 times) in samples obtained from solutions with the addition of NH4F and up to 29.9% (1.53 times) in samples obtained from solutions with the addition of NH4OH is observed. The formation of tin oxide (II) under the influence of the reducing properties of hydrogen plasma is assumed. At the same time, the formation of metal tin from tin dioxide is not observed here. Due to the decreasing of transmission coefficient in the long-wave region of the spectrum. There is an increase in surface resistance after treatment with oxygen plasma, due to filling oxygen vacancies. Treatment of hydrogen plasma films leads to a decrease in surface resistance. Perhaps due to the increase in oxygen vacancies under the influence of hydrogen plasma. Within five minutes, the oxygen and hydrogen plasma had a more active effect on the films obtained from the solution with the addition of ammonium hydroxide, which is associated with a higher porosity of the sample. Consequently, irrespective of the time of plasma exposure with increasing the surface of contact between ionized gases and the film material, the interaction efficiency will increase.

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31

Ingold, K. U. y Gino A. DiLabio. "Is the oxygen “side-on”, or “end-on” and fluctional, in peroxyl radicals with magnetically equivalent oxygen atoms?" Canadian Journal of Chemistry 88, n.º 11 (noviembre de 2010): 1053–56. http://dx.doi.org/10.1139/v10-071.

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The g values that have been measured for the group-14 peroxyls are sufficiently similar to suggest that they all have very similar structures. However, the 17O hyperfine splittings seem to indicate that tin peroxyls have structures that differ from their lighter group-14 analogs. We hypothesize that the oxygen atoms in tin peroxyls are magnetically equivalent because they undergo a rapid 1,2-shift. Density-functional and wave-function theory calculations support this view.

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32

Wan, C. F., R. D. McGrath, W. F. Keenan y S. N. Frank. "LPCVD of Tin Oxide from Tetramethyltin and Oxygen". Journal of The Electrochemical Society 136, n.º 5 (1 de mayo de 1989): 1459–63. http://dx.doi.org/10.1149/1.2096941.

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33

Tompkins, Harland G. y James A. Sellers. "Oxidation of TiN in an oxygen plasma asher". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, n.º 4 (julio de 1994): 2446–50. http://dx.doi.org/10.1116/1.579191.

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34

Seidel, F., H. R. Stock y P. Mayr. "Carbon, nitrogen and oxygen implantation into TiN coatings". Surface and Coatings Technology 108-109 (octubre de 1998): 271–75. http://dx.doi.org/10.1016/s0257-8972(98)00562-3.

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35

Raghavan, V. "Fe-O-Sn-Zn (Iron-Oxygen-Tin-Zinc)". Journal of Phase Equilibria and Diffusion 31, n.º 4 (21 de abril de 2010): 387–88. http://dx.doi.org/10.1007/s11669-010-9722-8.

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36

Raghavan, V. "ChemInform Abstract: Fe-O-Sn (Iron-Oxygen-Tin)". ChemInform 42, n.º 6 (13 de enero de 2011): no. http://dx.doi.org/10.1002/chin.201106217.

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37

Amato-Wierda, Carmela y Derk A. Wierda. "Chemical vapor deposition of titanium nitride thin films from tetrakis(dimethylamido)titanium and hydrazine as a coreactant". Journal of Materials Research 15, n.º 11 (noviembre de 2000): 2414–24. http://dx.doi.org/10.1557/jmr.2000.0347.

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Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 °C. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 104 μΩ cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 °C from a 2.7% hydrazine–ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.

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38

Mortazavi, S. Mohammad Reza, Fereshteh Rashchi y Rasoul Khayyam Nekouei. "Characterization of Nano-Structured Tin Oxide Film Prepared by Anodic Oxidation Process". Advanced Materials Research 829 (noviembre de 2013): 366–70. http://dx.doi.org/10.4028/www.scientific.net/amr.829.366.

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In this study, synthesis of tin oxide by anodic oxidation of tin foils at room temperature in oxalic acid has been investigated. The prepared structure was characterized by field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS). FESEM results showed that the anodization process leads to formation of nanoporous, cuboid and granular structures. EDS analysis in all tested samples showed the constituents of tin and oxygen.

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39

Paskaleva, Albena, Boris Hudec, Peter Jancovic, Karol Fröhlich y Dencho Spassov. "The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures". Facta universitatis - series: Electronics and Energetics 27, n.º 4 (2014): 621–30. http://dx.doi.org/10.2298/fuee1404621p.

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Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

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40

Czerwiński, Andrzej, Agata Skwarek, Mariusz Płuska, Jacek Ratajczak y Krzysztof Witek. "Tin Pest and Tin Oxidation on Tin-Rich Lead-Free Alloys Investigated by Electron Microscopy Methods". Solid State Phenomena 186 (marzo de 2012): 275–78. http://dx.doi.org/10.4028/www.scientific.net/ssp.186.275.

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Soldering of joints in electronic circuits is performed in all branches of electronic industry. At temperatures below 13.2°C, an allotropic transformation of white β-tin into gray α-tin called tin pest may occur, leading to the degradation of mechanical properties or even a total disintegration of the alloy. Presence of some chemical elements in the alloy can inhibit the transformation, while other can promote it, e.g. a significant Pb addition prevents the transformation. However, the Restriction of Hazardous Substances Directive adopted by the European Union since 2006, limits Pb amount to 0.1 wt.%, leading to tin pest phenomenon in tin rich materials. The energy dispersive X-ray spectroscopy (EDXS) in scanning electron microscope was performed on samples of tin-rich lead-free alloys subjected to accelerated low temperature stress and after months of storage at -18 °C showed the tin pest occurrence. Much higher oxygen content in EDXS spectrum was revealed at old regions of transformed α-tin than at new α-tin and non-transformed β-tin regions. The tin pest oxidation is much accelerated in comparison to β-tin and can finally lead to the consuming of the whole tin in deteriorated places by the tin oxide.

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41

Kong, Xianqi y T. Bruce Grindley. "Control of regioselectivity in reactions of dialkylstannylene acetals. Part I. A dramatic reversal of regioselectivity in mono-p-toluenesulfonation reactions". Canadian Journal of Chemistry 72, n.º 12 (1 de diciembre de 1994): 2396–404. http://dx.doi.org/10.1139/v94-306.

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The regioselectivities of p-toluenesulfonation reactions of dialkylstannylene acetals obtained from a number of carbohydrate-derived terminal 1,2-diols in the absence of added nucleophiles have been explored as functions of the carbohydrate structure, the nature of the alkyl group on tin, the solvent, and the reaction temperature. Virtually all dibutylstannylene acetals react preferentially on the primary oxygen atom, sometimes with excellent regioselectivity. Increasing the steric bulk of the alkyl substituents on tin increases the preference for reaction at the secondary oxygen atom, but at the expense of increased reaction times. Hexamethylenestannylene acetals react at about the same rate as dibutylstannylene acetals; in almost all cases, they react preferentially on the secondary oxygen atom, sometimes with excellent regioselectivity.

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42

Panjan, Peter, Aljaž Drnovšek, Pal Terek, Aleksandar Miletić, Miha Čekada y Matjaž Panjan. "Comparative Study of Tribological Behavior of TiN Hard Coatings Deposited by Various PVD Deposition Techniques". Coatings 12, n.º 3 (22 de febrero de 2022): 294. http://dx.doi.org/10.3390/coatings12030294.

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In this paper, we present a comparative study of tribological properties of TiN coatings deposited by low-voltage electron beam evaporation, magnetron sputtering and cathodic arc deposition. The correlation of tribological behavior of these coatings with their intrinsic properties and friction condition was studied. The influence of surface topography and the surrounding atmosphere was analyzed in more detail. We limited ourselves to the investigation of tribological processes that take place in the initial phase of the sliding test (the first 1000 cycles). A significant difference in the initial phase of the sliding test of three types of TiN coatings was observed. We found that nodular defects on the coating surface have an important role in this stage of the sliding test. The tribological response of TiN coatings, prepared by cathodic arc deposition, is also affected by the metal droplets on the coating surface, as well as those incorporated in the coating itself. Namely, the soft metal droplets increase the adhesion component of friction. The wear rates increased with the surface roughness of TiN coatings, the most for coatings prepared by cathodic arc deposition. The influences of post-polishing of the coating and the surrounding atmosphere were also investigated. The sliding tests on different types of TiN coatings were conducted in ambient air, oxygen and nitrogen. While oxygen promotes tribo-chemical reactions at the contact surface of the coating, nitrogen suppresses them. We found that the wear rate measured in ambient air, compared with that in an oxygen atmosphere, was lower. The difference is probably due to the influence of humidity in the ambient air. On the other hand, wear rates measured in a nitrogen atmosphere were much lower in comparison with those measured in an oxygen or ambient air atmosphere.

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43

Moskalewicz, Tomasz, Maciej Warcaba, Sławomir Zimowski y Alicja Łukaszczyk. "Improvement of the Ti-6Al-4V Alloy’s Tribological Properties and Electrochemical Corrosion Resistance by Nanocomposite TiN/PEEK708 Coatings". Metallurgical and Materials Transactions A 50, n.º 12 (10 de octubre de 2019): 5914–24. http://dx.doi.org/10.1007/s11661-019-05484-7.

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Abstract In this work, polyetheretherketone-based TiN/PEEK708 nanocomposite coatings on oxygen hardened Ti-6Al-4V titanium alloy substrates were fabricated by using cathodic electrophoretic deposition and post-heat treatment. The microstructure of coatings was investigated by using scanning electron microscopy, transmission electron microscopy, and X-ray diffractometry. The scratch resistance, tribological properties, and electrochemical corrosion resistance were also studied. The results show that homogeneous TiN/PEEK708 coatings may be deposited from ethanol-based suspensions containing cationic chitosan polyelectrolyte, which provides electrosteric stabilization of the suspension. Heat treatment densified the coatings and changed the PEEK structure from amorphous to semi-crystalline. The coatings were characterized by very good scratch resistance, with no cohesive and adhesive cracks being observed up to the load of 30 N. They reduced the coefficient of friction from 0.70 for the baseline alloy and 0.65 for the oxygen hardened alloy to 0.30. They also significantly increased the wear resistance of the alloy during dry sliding contact with an alumina ball. The wear rate of the coated oxygen hardened alloy was about 70 and 650 times lower in comparison with the oxygen hardened and baseline alloy, respectively. The corrosion studies demonstrated that the baseline and oxygen hardened alloy have comparable corrosion resistance. The TiN/PEEK708 coating enhanced the electrochemical corrosion resistance of the alloy in the NaCl aqueous solution.

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44

Zeinati, Aseel, Durga Misra, Dina H. Triyoso, Sophia Rogalskyj, K. Imakita, Kandabara Tapily, Steven Consiglio, Cory S. Wajda y Gert J. Leusink. "Impact of Bottom Electrode in HfO₂-Based Rram Devices on Switching Characteristics". ECS Meeting Abstracts MA2023-01, n.º 29 (28 de agosto de 2023): 1783. http://dx.doi.org/10.1149/ma2023-01291783mtgabs.

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Resistive random-access memory (RRAM) devices with hydrogen plasma treated HfO2 have shown low power switching (1) and good conductance quantization with programing pulsed operation (2) that qualify them to be used for in-memory computing. Engineering the distribution of defects or oxygen vacancies near the top and bottom electrodes has a significant impact on reducing the switching power and improving the multi-level cell (MLC) characteristics of the device. A graded distribution with higher concentration of oxygen vacancies closer to the top electrode (TE) due to hydrogen plasma treatment and lower concentration near the bottom electrode (BE) reduces switching energy (power) (1). However, the impact of the bottom electrode is not well understood. In this work we investigated three RRAM stacks as shown in Figure 1 that have the same top electrode metal (50nm PVD TiN/5nm ALD TiN) and dielectric (HfO2 with hydrogen plasma treatment at the mid-point) but with different BE for each stack: TiN (device A (control)), TiN plus Mo with thermal anneal (device B), and TiN plus Mo with plasma nitridation (device C). Choosing a more inert metal as the BE provides a lower oxygen vacancy concentration at the interface between the BE and the dielectric (3) which in turn reduces the switching power as noted with device C (TiN plus Mo with plasma nitridation) which switches at a minimum compliance current (Icc) of 500pA. It is possible that the presence of nitrogen prevents the increase in oxygen vacancy concentration near the BE. On the other hand, a higher concentration of oxygen vacancies at the BE and the dielectric interface leads to a larger magnitude of band bending and increases the height of Schottky barrier. This possibly leads to an increase in the switching power in device A and device B as compared to device C (3-4). Note that device A (TiN) switched at Icc=30µA and device B (TiN plus Mo with thermal anneal) switched at Icc=8µA, which is superior compared to device A in switching power. This suggests that the alloy of TiN with Mo is reducing the oxygen vacancies near the BE. To study the MLC characteristics of the devices, we performed a train of 36 RESET pulses with fixed amplitude Vp= -1V and pulse width starting at 4µs and increasing by 20µs every 3 pulses, while we applied Vr=0.1V and tr=10µs after each pulse to measure the conductance. Figure 2 shows that device B (TiN plus Mo with thermal anneal) has good MLC with no overlap between the states while device A shows unstable MLC behavior due to time constant variation. Figure 3a shows the results of device C for the same RESET pulse train that was applied to devices A and B. Since device C switches at very low current and voltage, the conductance quantization was unstable after 15 pulses due to overstress of the conductive filament. Figure 3b shows the results after selecting the proper pulse set Vp= -0.5V and pulse width starting at tp=100ns and increasing by 100ns every 3 pulses, while we applied Vr=0.05V and tr=100ns after each pulse, resulting in a better conductance quantization compared to the previous setup. Appropriate engineering of the BE and managing of the oxygen vacancy distribution by hydrogen plasma treatment can significantly reduce the switching power. References: Patel, D. Misra, D.H. Triyoso, K. Tapily, R.D Clark, S. Consiglio, G. Pattanaik, C. Cole, A. Raley, C.S Wajda and G.J Leusink, ECS Transactions, 104(3), 35 (2021). Zeinati, D. Misra, D.H. Triyoso, R.D. Clark, K. Tapily, S. Consiglio, C.S. Wajda, and G.J. Leusink, 2022 ECS Meeting Abstracts, vol. MA2022-02, 806 (DOI: 10.1149/MA2022-0215806mtgabs) Yong, K. Persson, M. Ram, G. D’Acunto, Y. Liu, S. Benter, J. Pan, Z. Li, M. Borg, A. Mikkelsen, L. Wernersson, R.Timm, Applied Surface Science 551 (2021) 149386 J-W. Yoon, J.H. Yoon, J.-H. Lee, C.S. Hwang, Nanoscale 6 (2014) 6668–6678. Figure 1

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45

Herzog, Thomas, Naomi Weitzel y Sebastian Polarz. "Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods". Nanoscale 12, n.º 35 (2020): 18322–32. http://dx.doi.org/10.1039/d0nr03734f.

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In arrays of multi-domain nanowires static antimony doping in combination with mobile doping stemming from oxygen vacancies is utilized to achieve bipolar memristive properties resulting from oxygen vacancy injection in an undoped tin oxide domain.

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46

Holeček, Jaroslav, Karel Handlíř, Antonín Lyčka, T. K. Chattopadhyay, B. Majee y A. K. Kumar. "Preparation and infrared and 13C, 17O, and 119Sn NMR spectra of some substituted di- and tri(1-butyl)tin phenoxyacetates and phenylthioacetates". Collection of Czechoslovak Chemical Communications 51, n.º 5 (1986): 1100–1111. http://dx.doi.org/10.1135/cccc19861100.

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The paper describes preparation and basic physical and chemical properties of a group of substituted di- and tri(1-butyl)tin(IV) phenoxyacetates and phenylthioacetates of the general formula (RxC6H5-xECH2CO2)nSn(1-C4H9)4-n, where R = H, 2-Cl, 4-Cl, 2-CH3, and 2-OCH3, E means oxygen or sulphur atoms, n = 1 or 2, and x = 1 or 2. From IR spectral data, 13C, 17O, and 119Sn NMR spectra, and from other physico-chemical methods, conclusions are drawn about structure of the compounds in solid state and in solutions of coordinating (hexamethylphosphoric triamide) and non-coordinating solvents (chloroform, carbon tetrachloride, carbon disulphide, benzene). In solid state the tri(1-butyl)tin(IV) compounds form polymeric chains with bidentate bridge carboxylic groups. In non-coordinating solvents these compounds are present as isolated pseudotetrahedral molecules, whereas in hexamethylphosphoric triamide they form complexes with one solvent molecule, the central tin atom exhibiting the trans-trigonally bipyramidal coordination. The di(1-butyl)tin(IV) compounds form, both in solid state and in non-coordinating solvents, monomeric particles containing bidentate chelate carboxylic groups. In hexamethylphosphoric triamide they form complexes with octahedral coordination around the tin atom containing monodentate carboxylic groups and the butyl groups are trans position. In none of the cases studied evidence was obtained for interaction of the oxygen or sulphur atoms of C6H5ECH2 group with the tin atom.

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47

Zhang, Chun Min, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang y David Wei Zhang. "Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing". Materials Science Forum 815 (marzo de 2015): 8–13. http://dx.doi.org/10.4028/www.scientific.net/msf.815.8.

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A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.

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48

ABDULSATTAR, MUDAR AHMED, ADEEBH L. RESNE, SHROK ABDULLAH, RIYADH J. MOHAMMED, NOON KADHUM ALARED y ELHAM HANIE NASER. "CHLORINE GAS SENSING OF SnO2 NANOCLUSTERS AS A FUNCTION OF TEMPERATURE: A DFT STUDY". Surface Review and Letters 26, n.º 04 (mayo de 2019): 1850172. http://dx.doi.org/10.1142/s0218625x1850172x.

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Density functional theory combined with Gibbs free energy calculations is used to study the sensing behavior of tin dioxide (SnO[Formula: see text] clusters towards chlorine gas molecules. Studied SnO2 clusters’ results show the known property of tin dioxide being an oxygen-deficient semiconductor with the preferred stoichiometry SnO[Formula: see text]. The kind of reactions that result in sensing Cl2 molecules is investigated. These include oxygen replacement, chlorine molecule dissociation and van der Waals attachment. Oxygen replacement shows an increase in energy gap which is the case experimentally. Optimum sensing operating temperature towards Cl2 molecules that results from the intersection of the highest SnO2 adsorption and desorption Gibbs free energy lines is at 275∘C in agreement with the experimentally measured temperature of 260∘C.

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49

Dmitriyeva, E. A., I. A. Lebedev, E. A. Grushevskaya, D. O. Murzalinov, A. S. Serikkanov, N. M. Tompakova, A. I. Fedosimova y A. T. Temiraliev. "The effect of three-minute exposure of oxygen plasma on the properties of tin oxide films". Bulletin of the Karaganda University. "Physics" Series 99, n.º 3 (30 de septiembre de 2020): 38–45. http://dx.doi.org/10.31489/2020ph3/38-45.

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Research devoted to the effect of three-minute exposure of oxygen plasma on the properties of tin oxide films investigation. The films were obtained by sol-gel method from five-water tin tetrachloride solution. The concentration of tin ions in the SnCl4/EtOH film-forming system was 0.14 mol/l. The solution system was deposed on the glass substrate by carring out a modified dipping method. Plasma treatment was performed at a pressure of 6.5 Pa and a power of about 20 Watts. The frequency of the oscillations produced by the generator was 27.12 ± 0.6 % MHz as well. The temperature of the samples during processing did not exceed 100 ºC. As a result of the formation of tin oxide (II), the film transmittance decreased after treatment with oxygen plasma. The width of the electric forbidden zone of the obtained samples was calculated, which was 3.95 eV for glass and 3.79 eV for film. The resistance of the films was determined by 10 measurements on different parts of the samples. The film without processing has a resistance of about 4255 ± 1158 kΩ, after processing, the resistance decreased by 25 times and amounted to 167 ± 26 kΩ. A decrease in resistance indicates an increase in the concentration of charge carriers in the sample. The resulting SnO is a semiconductor that lowers the transmittance of the studied films and contributes to reducing their resistance. X-ray structural analysis of the samples was also performed. After processing in oxygen plasma, the intensity of reflection from the (110) plane have increased. It should be noted that the number of planes with (101) indexes has decreased. The study of the sample surface showed the destructive nature of three-minute exposure by oxygen plasma. Keywords: thin films, SnO2, sol-gel method, oxygen plasma treatment, transparency, structure, resist

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50

Song, Seok-Kyun, Daeil Kim, Steven Kim, Seok-Keun Koh, Hyung-Jin Jung, Jeong-Young Lee y Hong-Koo Baik. "Structure and chemical characteristics of tin oxide films prepared by reactive-ion-assisted deposition as a function of oxygen ion beam energy". Journal of Materials Research 15, n.º 9 (septiembre de 2000): 1911–21. http://dx.doi.org/10.1557/jmr.2000.0277.

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Tin oxide films were deposited on amorphous SiO2/Si and Si (100) substrates by ion-assisted deposition (IAD) at various ion beam potentials (VI) at room temperature and a working pressure of 8 × 10−5 torr. The structural and chemical properties of the as-grown tin oxide films were investigated to determine the effects of the oxygen ion/atom arrival ratio (Ri). X-ray diffraction patterns indicated that the as-grown films with different average energy per atom (Eave) showed different growth directions. The as-grown films with oxygen/Sn ratio (NO/NSn) of 2.03 and 2.02 had preferred orientation of (101) and (002), respectively. In addition, the as-grown film with low Ri was amorphous. Comparison of the observed d spacings with those for standard SnO2 samples, indicated that the crystalline as-grown films had compressive and tensile stress depending on Eave. In transmission electron microscopy analysis, a buffer layer of amorphous tin oxide was observed at the interface between the substrate and the film, and the crystalline grains were grown on this buffer layer. The crystalline grains were arranged in large spherical clusters, and this shape directly affected surface roughness. Rutherford backscattering spectroscopy spectra showed that the tin oxide thin films were inhomogeneous. The density of films decreased and the porosity and oxygen trapped in the films increased with increasing Ri. The densest film had about 6% porosity.

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