Artículos de revistas sobre el tema "Thin Film Transistors (TFT)"
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Park, Hyun-Woo, Sera Kwon, Aeran Song, Dukhyun Choi y Kwun-Bum Chung. "Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor". Journal of Materials Chemistry C 7, n.º 4 (2019): 1006–13. http://dx.doi.org/10.1039/c8tc03585g.
Texto completoPokharel, Peshal y Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics". Himalayan Journal of Science and Technology 6, n.º 1 (31 de diciembre de 2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.
Texto completoManoli, Kyriaki, Preethi Seshadri, Mandeep Singh, Cinzia Di Franco, Angelo Nacci, Gerardo Palazzo y Luisa Torsi. "Solvent-gated thin-film-transistors". Physical Chemistry Chemical Physics 19, n.º 31 (2017): 20573–81. http://dx.doi.org/10.1039/c7cp03262e.
Texto completoKuo, Yue. "(Invited) Oxide TFT Applications: Principles and Challenges". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1285. http://dx.doi.org/10.1149/ma2022-02351285mtgabs.
Texto completoMądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores y Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes". MRS Advances 1, n.º 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.
Texto completoYan, Xingzhen, Kai Shi, Xuefeng Chu, Fan Yang, Yaodan Chi y Xiaotian Yang. "Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors". Coatings 9, n.º 10 (27 de septiembre de 2019): 619. http://dx.doi.org/10.3390/coatings9100619.
Texto completoGu, Guiru, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih et al. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response". Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.
Texto completoNagamatsu, Shuichi, Masataka Ishida, Shougo Miyajima y Shyam S. Pandey. "P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension". Materials 12, n.º 21 (5 de noviembre de 2019): 3643. http://dx.doi.org/10.3390/ma12213643.
Texto completoFuruta, Mamoru y Yusaku Magari. "(Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1266. http://dx.doi.org/10.1149/ma2022-02351266mtgabs.
Texto completoShin, Seung Won, Jae Eun Cho, Hyun-Mo Lee, Jin-Seong Park y Seong Jun Kang. "Photoresponses of InSnGaO and InGaZnO thin-film transistors". RSC Advances 6, n.º 87 (2016): 83529–33. http://dx.doi.org/10.1039/c6ra17896k.
Texto completoXu, Wangying, Chuyu Xu, Zhibo Zhang, Weicheng Huang, Qiubao Lin, Shuangmu Zhuo, Fang Xu, Xinke Liu, Deliang Zhu y Chun Zhao. "Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors". Nanomaterials 12, n.º 16 (22 de agosto de 2022): 2880. http://dx.doi.org/10.3390/nano12162880.
Texto completoYang, X., C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du y J. Cao. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass". Key Engineering Materials 428-429 (enero de 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.
Texto completoKang, Tsung-Kuei, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao y Hone-Zern Chen. "Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor". Membranes 11, n.º 10 (30 de septiembre de 2021): 758. http://dx.doi.org/10.3390/membranes11100758.
Texto completoPons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran y Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors". Superficies y Vacío 30, n.º 3 (26 de noviembre de 2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.
Texto completoNing, Honglong, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye y Junbiao Peng. "Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature". Membranes 12, n.º 1 (27 de diciembre de 2021): 29. http://dx.doi.org/10.3390/membranes12010029.
Texto completoWang, Xiao y Ananth Dodabalapur. "Modeling of thin-film transistor device characteristics based on fundamental charge transport physics". Journal of Applied Physics 132, n.º 4 (28 de julio de 2022): 044501. http://dx.doi.org/10.1063/5.0083876.
Texto completoKandpal, Kavindra y Navneet Gupta. "Perspective of zinc oxide based thin film transistors: a comprehensive review". Microelectronics International 35, n.º 1 (2 de enero de 2018): 52–63. http://dx.doi.org/10.1108/mi-10-2016-0066.
Texto completoLiu, Xianzhe, Ao Chen, Weigang Zhu, Yan Li, Huiqi Zhang, Youbin Chen, Aiping Huang y Jianyi Luo. "20.1: Invited Paper: Research on Oxide Thin Film Transistors for Wearable Sensors". SID Symposium Digest of Technical Papers 54, S1 (abril de 2023): 151–52. http://dx.doi.org/10.1002/sdtp.16249.
Texto completoHu, Shiben, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo et al. "Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance". Nanomaterials 11, n.º 2 (18 de febrero de 2021): 522. http://dx.doi.org/10.3390/nano11020522.
Texto completoTayoub, Hadjira, Baya Zebentouta y Zineb Benamara. "TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor". Pakistan Journal of Scientific & Industrial Research Series A: Physical Sciences 63, n.º 2 (15 de julio de 2020): 89–93. http://dx.doi.org/10.52763/pjsir.phys.sci.63.2.2020.89.93.
Texto completoMatsukawa, Kimihiro, Mitsuru Watanabe, Takashi Hamada, Takashi Nagase y Hiroyoshi Naito. "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors". International Journal of Polymer Science 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/852063.
Texto completoShuib, Umar Faruk, Khairul Anuar Mohamad, Afishah Alias, Tamer A. Tabet, Bablu K. Gosh y Ismail Saad. "Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation". Advanced Materials Research 1107 (junio de 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.514.
Texto completoAl-Jawhari, H. A., J. A. Caraveo-Frescas y M. N. Hedhili. "Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors". Advances in Science and Technology 93 (octubre de 2014): 260–63. http://dx.doi.org/10.4028/www.scientific.net/ast.93.260.
Texto completoWager, John F. "(Invited) Thin-Film Transistor Accumulation-Mode Modeling". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1257. http://dx.doi.org/10.1149/ma2022-02351257mtgabs.
Texto completoYen, Te Jui, Albert Chin y Vladimir Gritsenko. "Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer". Nanomaterials 11, n.º 1 (3 de enero de 2021): 92. http://dx.doi.org/10.3390/nano11010092.
Texto completoYang, Huan, Bo Wang, Wenting Dong, Zhikang Ma, Wengao Pan, Lei Lu y Shengdong Zhang. "P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors". SID Symposium Digest of Technical Papers 54, S1 (abril de 2023): 461–63. http://dx.doi.org/10.1002/sdtp.16332.
Texto completoMd Sin, N. D., Mohamad Hafiz Mamat y Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application". Advanced Materials Research 667 (marzo de 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.
Texto completoShur, Michael, Xueqing Liu y Trond Ytterdal. "(Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1256. http://dx.doi.org/10.1149/ma2022-02351256mtgabs.
Texto completoSu, Jinbao, Hui Yang, Weiguang Yang y Xiqing Zhang. "Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering". Journal of Vacuum Science & Technology B 40, n.º 3 (mayo de 2022): 032201. http://dx.doi.org/10.1116/6.0001702.
Texto completoBorchert, James W., Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs y Hagen Klauk. "Flexible low-voltage high-frequency organic thin-film transistors". Science Advances 6, n.º 21 (mayo de 2020): eaaz5156. http://dx.doi.org/10.1126/sciadv.aaz5156.
Texto completoSingh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, Gian Paolo Suranna, Nicoletta Ditaranto, Cinzia Di Franco, Maria Vittoria Santacroce et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer". Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.
Texto completoJung, Seyeon, Taehoon Sung, Sein Lee y J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System". ECS Meeting Abstracts MA2022-01, n.º 31 (7 de julio de 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Texto completoKuo, Yue. "Welcome Remarks - H03: Thin Film Transistors 15 (TFT 15)". ECS Meeting Abstracts MA2020-02, n.º 28 (23 de noviembre de 2020): Open. http://dx.doi.org/10.1149/ma2020-0228openmtgabs.
Texto completoWang, Chong, Liang Guo, Mingzhou Lei, Chao Wang, Xuefeng Chu, Fan Yang, Xiaohong Gao, Huan Wamg, Yaodan Chi y Xiaotian Yang. "Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors". Nanomaterials 12, n.º 14 (13 de julio de 2022): 2397. http://dx.doi.org/10.3390/nano12142397.
Texto completoDargar, Shashi Kant, J. K. Srivastava, Santosh Bharti y Abha Nyati. "Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation". International Journal of Electrical and Computer Engineering (IJECE) 7, n.º 1 (1 de febrero de 2017): 144. http://dx.doi.org/10.11591/ijece.v7i1.pp144-151.
Texto completoChen, Wei-De, Sheng-Po Chang y Wei-Lun Huang. "Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer". Coatings 10, n.º 12 (20 de diciembre de 2020): 1261. http://dx.doi.org/10.3390/coatings10121261.
Texto completoLee, Seung-Hwan, Hyun-Jun Jeong, Ki-Lim Han, GeonHo Baek y Jin-Seong Park. "An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition". Journal of Materials Chemistry C 9, n.º 12 (2021): 4322–29. http://dx.doi.org/10.1039/d0tc05281g.
Texto completoLin, Jium-Ming, Po-Kuang Chang y Zhong-Qing Hou. "INTEGRATING MICROARRAY PROBES AND AMPLIFIER ON AN ACTIVE RFID TAG FOR BIOSENSING AND MONITOR SYSTEM DESIGN". Biomedical Engineering: Applications, Basis and Communications 21, n.º 06 (diciembre de 2009): 421–25. http://dx.doi.org/10.4015/s1016237209001556.
Texto completoShin, Hyunji, Hyeonju Lee, Bokyung Kim, Xue Zhang, Jin-Hyuk Bae y Jaehoon Park. "Effects of Blended Poly(3-hexylthiophene) and 6,13-bis(triisopropylsilylethynyl) pentacene Organic Semiconductors on the Photoresponse Characteristics of Thin-Film Transistors". Korean Journal of Metals and Materials 60, n.º 3 (5 de marzo de 2022): 198–205. http://dx.doi.org/10.3365/kjmm.2022.60.3.198.
Texto completoLee, Won-Yong, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim y Jaewon Jang. "Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor". Electronics 9, n.º 3 (22 de marzo de 2020): 523. http://dx.doi.org/10.3390/electronics9030523.
Texto completoLee, Hyeonju, Xue Zhang, Jung Kim, Eui-Jik Kim y Jaehoon Park. "Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing". Materials 11, n.º 11 (26 de octubre de 2018): 2103. http://dx.doi.org/10.3390/ma11112103.
Texto completoZhang, Lirong, Huaming Yu, Wenping Xiao, Chun Liu, Junrong Chen, Manlan Guo, Huayu Gao, Baiquan Liu y Weijing Wu. "Strategies for Applications of Oxide-Based Thin Film Transistors". Electronics 11, n.º 6 (20 de marzo de 2022): 960. http://dx.doi.org/10.3390/electronics11060960.
Texto completoLiu, Wei-Sheng, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai y Hsing-Chun Kuo. "Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing". Membranes 12, n.º 1 (30 de diciembre de 2021): 49. http://dx.doi.org/10.3390/membranes12010049.
Texto completoBermundo, Juan Paolo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka y Yukiharu Uraoka. "Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane". MRS Proceedings 1633 (2014): 139–44. http://dx.doi.org/10.1557/opl.2014.118.
Texto completoAl Garni, S. E. y A. F. Qasrawi. "Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors". Functional Materials Letters 09, n.º 02 (abril de 2016): 1650019. http://dx.doi.org/10.1142/s1793604716500193.
Texto completoOuyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin y Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors". Materials 15, n.º 14 (8 de julio de 2022): 4781. http://dx.doi.org/10.3390/ma15144781.
Texto completoHwang, Young Hwan, Seok-Jun Seo y Byeong-Soo Bae. "Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor". Journal of Materials Research 25, n.º 4 (abril de 2010): 695–700. http://dx.doi.org/10.1557/jmr.2010.0103.
Texto completoKwon, Choi, Bae y Park. "Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films". Crystals 9, n.º 12 (28 de noviembre de 2019): 634. http://dx.doi.org/10.3390/cryst9120634.
Texto completoKuo, Yue. "Thin Film Transistors with Layered a-Si:H Structure". MRS Proceedings 377 (1995). http://dx.doi.org/10.1557/proc-377-701.
Texto completo"Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics". International Journal of Engineering and Advanced Technology 9, n.º 5 (30 de junio de 2020): 270–73. http://dx.doi.org/10.35940/ijeat.e9477.069520.
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