Artículos de revistas sobre el tema "Thermally assisted switching"
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Strukov, Dmitri B. y R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching". Applied Physics A 102, n.º 4 (26 de enero de 2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.
Texto completoTaniguchi, Tomohiro y Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region". Journal of the Korean Physical Society 62, n.º 12 (junio de 2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.
Texto completoIskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, A. F. Popkov, B. V. Potapkin, P. N. Skirdkov, K. A. Zvezdin, Q. Stainer, L. Lombard y K. Mackay. "Simulation of switching maps for thermally assisted MRAM nanodevices". Nanotechnologies in Russia 11, n.º 3-4 (marzo de 2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.
Texto completoGuillemenet, Y., L. Torres, G. Sassatelli y N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays". International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.
Texto completoPrejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa y Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability". Advances in Science and Technology 95 (octubre de 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.
Texto completoEl Baraji, M., V. Javerliac, W. Guo, G. Prenat y B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions". Journal of Applied Physics 106, n.º 12 (15 de diciembre de 2009): 123906. http://dx.doi.org/10.1063/1.3259373.
Texto completoAkagi, F., T. Matsumoto y K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording". Journal of Applied Physics 101, n.º 9 (mayo de 2007): 09H501. http://dx.doi.org/10.1063/1.2710546.
Texto completoKhalili Amiri, P., P. Upadhyaya, J. G. Alzate y K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits". Journal of Applied Physics 113, n.º 1 (7 de enero de 2013): 013912. http://dx.doi.org/10.1063/1.4773342.
Texto completoPrejbeanu, I. L., W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny y J. P. Nozieres. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions". IEEE Transactions on Magnetics 40, n.º 4 (julio de 2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.
Texto completoAzevedo, Joao, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, Jeremy Alvarez-Herault y Ken Mackay. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, n.º 11 (noviembre de 2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.
Texto completoRalph, D. C., Y. T. Cui, L. Q. Liu, T. Moriyama, C. Wang y R. A. Buhrman. "Spin-transfer torque in nanoscale magnetic devices". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, n.º 1951 (28 de septiembre de 2011): 3617–30. http://dx.doi.org/10.1098/rsta.2011.0169.
Texto completoTaniguchi, Tomohiro y Hiroshi Imamura. "Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching". Applied Physics Express 4, n.º 10 (20 de septiembre de 2011): 103001. http://dx.doi.org/10.1143/apex.4.103001.
Texto completoRen, Yi, Tianle Zhou, Chun Jiang y Bin Tang. "Thermally switching between perfect absorber and asymmetric transmission in vanadium dioxide-assisted metamaterials". Optics Express 29, n.º 5 (25 de febrero de 2021): 7666. http://dx.doi.org/10.1364/oe.418273.
Texto completoYoshikawa, D., Y. Fujisawa, T. Kato, S. Iwata y S. Tsunashima. "Thermally Assisted Magnetization Switching on Magnetic Tunnel Junctions With Perpendicularly Magnetized TbFe Layer". Journal of the Magnetics Society of Japan 38, n.º 3-2 (2014): 123–26. http://dx.doi.org/10.3379/msjmag.1403r003.
Texto completoLe Gallo, Manuel, Aravinthan Athmanathan, Daniel Krebs y Abu Sebastian. "Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells". Journal of Applied Physics 119, n.º 2 (14 de enero de 2016): 025704. http://dx.doi.org/10.1063/1.4938532.
Texto completoSiddik, Manzar, Seungjae Jung, Jubong Park, Wootae Lee, Seonghyun Kim, Joonmyoung Lee, Jungho Shin et al. "Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications". Applied Physics Letters 99, n.º 6 (8 de agosto de 2011): 063501. http://dx.doi.org/10.1063/1.3622656.
Texto completoHassdenteufel, Alexander, Birgit Hebler, Christian Schubert, Andreas Liebig, Martin Teich, Manfred Helm, Martin Aeschlimann, Manfred Albrecht y Rudolf Bratschitsch. "Thermally Assisted All-Optical Helicity Dependent Magnetic Switching in Amorphous Fe100-xTbxAlloy Films". Advanced Materials 25, n.º 22 (25 de abril de 2013): 3122–28. http://dx.doi.org/10.1002/adma.201300176.
Texto completoZheng, Yuankai, Yihong Wu, Kebin Li, Jinjun Qiu, Guchang Han, Zaibing Guo, Ping Luo et al. "Magnetic Random Access Memory (MRAM)". Journal of Nanoscience and Nanotechnology 7, n.º 1 (1 de enero de 2007): 117–37. http://dx.doi.org/10.1166/jnn.2007.18010.
Texto completoCebollada, F., J. M. González, J. De Frutos y A. M. González. "Mecanismos de inversión de la magnetización e interacciones en sistemas magnéticos: campo coercitivo versus campo de conmutación y desimanación térmicamente asistida". Boletín de la Sociedad Española de Cerámica y Vidrio 44, n.º 3 (30 de junio de 2005): 169–76. http://dx.doi.org/10.3989/cyv.2005.v44.i3.385.
Texto completoChavent, Antoine, Jeremy Alvarez-Herault, Celine Portemont, Claire Creuzet, Jeremy Pereira, Julien Vidal, Ken Mackay, Ricardo C. Sousa, Ioan L. Prejbeanu y Bernard Dieny. "Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM". IEEE Transactions on Magnetics 50, n.º 11 (noviembre de 2014): 1–4. http://dx.doi.org/10.1109/tmag.2014.2322494.
Texto completoPapusoi, C., Y. Conraux, I. L. Prejbeanu, R. Sousa y B. Dieny. "Switching field dependence on heating pulse duration in thermally assisted magnetic random access memories". Journal of Magnetism and Magnetic Materials 321, n.º 16 (agosto de 2009): 2467–71. http://dx.doi.org/10.1016/j.jmmm.2009.03.050.
Texto completoHérault, J., R. C. Sousa, C. Ducruet, B. Dieny, Y. Conraux, C. Portemont, K. Mackay et al. "Nanosecond magnetic switching of ferromagnet-antiferromagnet bilayers in thermally assisted magnetic random access memory". Journal of Applied Physics 106, n.º 1 (julio de 2009): 014505. http://dx.doi.org/10.1063/1.3158231.
Texto completoTang, Ke, HongJie Yang, LinHong Cao, HongTao Yu, JinSong Liu y JunXia Wang. "Thermally assisted switching in FePt single-domain particles with a Gaussian distribution of temperature". Science China Physics, Mechanics and Astronomy 54, n.º 7 (28 de mayo de 2011): 1263–66. http://dx.doi.org/10.1007/s11433-011-4353-6.
Texto completoLi, Zhen, Liesbet Lagae, Gustaaf Borghs, Robert Mertens y Willem Van Roy. "Fast thermally assisted switching at low current density in (Ga,Mn)As magnetic tunnel junctions". Applied Physics Letters 96, n.º 5 (febrero de 2010): 052513. http://dx.doi.org/10.1063/1.3302465.
Texto completoBandiera, S., R. C. Sousa, M. Marins de Castro, C. Ducruet, C. Portemont, S. Auffret, L. Vila, I. L. Prejbeanu, B. Rodmacq y B. Dieny. "Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions". Applied Physics Letters 99, n.º 20 (14 de noviembre de 2011): 202507. http://dx.doi.org/10.1063/1.3662971.
Texto completoDeschenes, Austin, Sadid Muneer, Mustafa Akbulut, Ali Gokirmak y Helena Silva. "Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory". Beilstein Journal of Nanotechnology 7 (11 de noviembre de 2016): 1676–83. http://dx.doi.org/10.3762/bjnano.7.160.
Texto completoChen, Yu-Ting, Ting-Chang Chang, Po-Chun Yang, Jheng-Jie Huang, Hsueh-Chih Tseng, Hui-Chun Huang, Jyun-Bao Yang et al. "Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure". IEEE Electron Device Letters 34, n.º 2 (febrero de 2013): 226–28. http://dx.doi.org/10.1109/led.2012.2232276.
Texto completoDai, Bing, Takeshi Kato, Satoshi Iwata y Shigeru Tsunashima. "Spin Transfer Torque Switching of Amorphous GdFeCo With Perpendicular Magnetic Anisotropy for Thermally Assisted Magnetic Memories". IEEE Transactions on Magnetics 48, n.º 11 (noviembre de 2012): 3223–26. http://dx.doi.org/10.1109/tmag.2012.2196988.
Texto completoLiu, Weikang, Bin Cheng, Shaoqing Ren, Wei Huang, Jihao Xie, Guangjun Zhou, Hongwei Qin y Jifan Hu. "Thermally assisted magnetization control and switching of Dy3Fe5O12 and Tb3Fe5O12 ferrimagnetic garnet by low density current". Journal of Magnetism and Magnetic Materials 507 (agosto de 2020): 166804. http://dx.doi.org/10.1016/j.jmmm.2020.166804.
Texto completoBi, Chong, Lin Huang, Shibing Long, Qi Liu, Zhihong Yao, Ling Li, Zongliang Huo, Liqing Pan y Ming Liu. "Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current". Applied Physics Letters 105, n.º 2 (14 de julio de 2014): 022407. http://dx.doi.org/10.1063/1.4890539.
Texto completoDai, Bing, Yong Guo, Jiaqi Zhu, Takeshi Kato, Satoshi Iwata, Shigeru Tsunashima, Lei Yang y Jiecai Han. "Spin transfer torque switching in exchange-coupled amorphous GdFeCo/TbFe bilayers for thermally assisted MRAM application". Journal of Physics D: Applied Physics 50, n.º 13 (2 de marzo de 2017): 135005. http://dx.doi.org/10.1088/1361-6463/aa5bca.
Texto completoKim, Taewook, Tobias Vogel, Eszter Piros, Déspina Nasiou, Nico Kaiser, Philipp Schreyer, Robert Winkler et al. "Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices". Applied Physics Letters 122, n.º 2 (9 de enero de 2023): 023502. http://dx.doi.org/10.1063/5.0124781.
Texto completoWibowo, Nur A., Cahya Handoyo y Leopoldus R. Sasongko. "Thermally Activated Magnetic Switching Mode for Various Thicknesses of Perpendicularly Ferromagnetic Nano-dot". Nanoscience &Nanotechnology-Asia 9, n.º 2 (25 de junio de 2019): 259–66. http://dx.doi.org/10.2174/2210681208666180507101809.
Texto completoDai, Bing, Takeshi Kato, Satoshi Iwata y Shigeru Tsunashima. "Temperature Dependence of Critical Current Density of Spin Transfer Torque Switching Amorphous GdFeCo for Thermally Assisted MRAM". IEEE Transactions on Magnetics 49, n.º 7 (julio de 2013): 4359–62. http://dx.doi.org/10.1109/tmag.2013.2240380.
Texto completoTomita, H., S. Miwa, T. Nozaki, S. Yamashita, T. Nagase, K. Nishiyama, E. Kitagawa et al. "Unified understanding of both thermally assisted and precessional spin-transfer switching in perpendicularly magnetized giant magnetoresistive nanopillars". Applied Physics Letters 102, n.º 4 (28 de enero de 2013): 042409. http://dx.doi.org/10.1063/1.4789879.
Texto completoGuillemenet, Y., G. Sassatelli y L. Torres. "Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories". IET Computers & Digital Techniques 4, n.º 3 (1 de mayo de 2010): 211–26. http://dx.doi.org/10.1049/iet-cdt.2009.0019.
Texto completoDai, B., J. Zhu, K. Liu, L. Yang y J. Han. "The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM". International Journal of Modern Physics B 31, n.º 16-19 (26 de julio de 2017): 1744075. http://dx.doi.org/10.1142/s0217979217440751.
Texto completoYaulema, Jorge, Jose Bon, M. Carmen Gómez-Collado, Juan José Pérez, Enrique Berjano y Macarena Trujillo. "Switching Monopolar Mode for RF-Assisted Resection and Superficial Ablation of Biological Tissue: Computational Modeling and Ex Vivo Experiments". Processes 8, n.º 12 (16 de diciembre de 2020): 1660. http://dx.doi.org/10.3390/pr8121660.
Texto completoYoon, Jong-Gul. "A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films". Materials 13, n.º 17 (20 de agosto de 2020): 3680. http://dx.doi.org/10.3390/ma13173680.
Texto completoGayen, Anabil, Barnali Biswas, Akhilesh Kumar Singh, Padmanapan Saravanan y Alagarsamy Perumal. "High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C)/Fe Trilayer Thin Films". Journal of Nanomaterials 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/718365.
Texto completoPushp, Aakash, Timothy Phung, Charles Rettner, Brian P. Hughes, See-Hun Yang y Stuart S. P. Parkin. "Giant thermal spin-torque–assisted magnetic tunnel junction switching". Proceedings of the National Academy of Sciences 112, n.º 21 (13 de mayo de 2015): 6585–90. http://dx.doi.org/10.1073/pnas.1507084112.
Texto completoZhang, Xiangping, Xingan Jiang, Jianming Deng, Xueyun Wang y Jiawang Hong. "Sunlight-assisted ferroelectric domain switching and ionic migration in Sn-based ferroelectric". Applied Physics Letters 121, n.º 19 (7 de noviembre de 2022): 192902. http://dx.doi.org/10.1063/5.0113665.
Texto completoMishra, Pinkesh Kumar, Meenakshi Sravani, M. V. V. Satya Narayana y Swapnil Bhuktare. "Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnet". Journal of Applied Physics 133, n.º 13 (7 de abril de 2023): 133901. http://dx.doi.org/10.1063/5.0143459.
Texto completoAdhinarta, J. K., E. Jobiliong, M. Shiddiq, H. P. Uranus y E. Steven. "Light storage and thermal-assisted switching of SrAl2O4:Eu2+, Dy3+". Journal of Nonlinear Optical Physics & Materials 28, n.º 04 (diciembre de 2019): 1950042. http://dx.doi.org/10.1142/s0218863519500425.
Texto completoYang, Zichu, Yuanchang Zhong, Yu Chen y Dalin Li. "Mixed Variable Parameter Energy Storage-Assisted Frequency Support Strategy". Electronics 13, n.º 8 (11 de abril de 2024): 1450. http://dx.doi.org/10.3390/electronics13081450.
Texto completoTaniguchi, Tomohiro y Hiroshi Imamura. "Theory of Spin Torque Assisted Thermal Switching of Single Free Layer". IEEE Transactions on Magnetics 48, n.º 11 (noviembre de 2012): 3803–6. http://dx.doi.org/10.1109/tmag.2012.2196979.
Texto completoBarra, Felipe. "Efficiency Fluctuations in a Quantum Battery Charged by a Repeated Interaction Process". Entropy 24, n.º 6 (13 de junio de 2022): 820. http://dx.doi.org/10.3390/e24060820.
Texto completoLiu, Zengyuan, Pin-Wei Huang, Ganping Ju y R. H. Victora. "Thermal switching probability distribution of L10 FePt for heat assisted magnetic recording". Applied Physics Letters 110, n.º 18 (mayo de 2017): 182405. http://dx.doi.org/10.1063/1.4983033.
Texto completoPanda, Debashis y Paritosh Piyush Sahu. "Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory". Journal of Applied Physics 121, n.º 20 (28 de mayo de 2017): 204504. http://dx.doi.org/10.1063/1.4984200.
Texto completoVishnuram, Pradeep, Sudhanshu Kumar, Vivek Kumar Singh, Thanikanti Sudhakar Babu, Ramani Kannan y Khairul Nisak Bt Md Hasan. "Phase Shift-Controlled Dual-Frequency Multi-Load Converter with Independent Power Control for Induction Cooking Applications". Sustainability 14, n.º 16 (18 de agosto de 2022): 10278. http://dx.doi.org/10.3390/su141610278.
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