Literatura académica sobre el tema "Switching Transition"
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Artículos de revistas sobre el tema "Switching Transition"
Malinenko, V. P., L. A. Aleshina, A. L. Pergament y G. V. Germak. "Switching Effects and Metal−Insulator Transition in Manganese Oxide". Journal on Selected Topics in Nano Electronics and Computing 1, n.º 1 (diciembre de 2013): 44–50. http://dx.doi.org/10.15393/j8.art.2013.3005.
Texto completoYan, Zhongna, Dou Zhang, Xuefan Zhou, He Qi, Hang Luo, Kechao Zhou, Isaac Abrahams y Haixue Yan. "Silver niobate based lead-free ceramics with high energy storage density". Journal of Materials Chemistry A 7, n.º 17 (2019): 10702–11. http://dx.doi.org/10.1039/c9ta00995g.
Texto completoHiggins, Matthew L. y Frank Ofori-Acheampong. "A Markov Regime-Switching Model with Time-Varying Transition Probabilities for Identifying Asset Price Bubbles". International Journal of Economics and Finance 10, n.º 4 (3 de marzo de 2018): 1. http://dx.doi.org/10.5539/ijef.v10n4p1.
Texto completoHan, Xiao, Ying Hui Gao, Yao Hong Sun y Ping Yan. "An Electronic Model of Capacitor Charging Power Supply Considering Transient Switching Interference". Advanced Materials Research 706-708 (junio de 2013): 1738–41. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.1738.
Texto completoShrestha, Ramesh, Yuxuan Luan, Sunmi Shin, Teng Zhang, Xiao Luo, James S. Lundh, Wei Gong et al. "High-contrast and reversible polymer thermal regulator by structural phase transition". Science Advances 5, n.º 12 (diciembre de 2019): eaax3777. http://dx.doi.org/10.1126/sciadv.aax3777.
Texto completoCastenschiold, R. "Closed-transition switching of essential loads". IEEE Transactions on Industry Applications 25, n.º 3 (1989): 403–7. http://dx.doi.org/10.1109/28.31209.
Texto completoSawa, Akihito. "Resistive switching in transition metal oxides". Materials Today 11, n.º 6 (junio de 2008): 28–36. http://dx.doi.org/10.1016/s1369-7021(08)70119-6.
Texto completoTIAN, Shijun, Xifan WANG, Xiuli WANG, Chengcheng SHAO y Rong YE. "Network transition security for transmission switching". Journal of Modern Power Systems and Clean Energy 7, n.º 5 (septiembre de 2019): 1105–14. http://dx.doi.org/10.1007/s40565-019-0562-1.
Texto completoRamesh, K., Pumlianmunga, R. Venkatesh, N. Naresh y E. S. R. Gopal. "Phase Change Properties of Chalcogenide Glasses - Some Interesting Observations". Key Engineering Materials 702 (julio de 2016): 37–42. http://dx.doi.org/10.4028/www.scientific.net/kem.702.37.
Texto completoDavis, Peter. "Adaptive Mode Selection Using On–Off Switching of Chaos". International Journal of Bifurcation and Chaos 08, n.º 08 (agosto de 1998): 1671–74. http://dx.doi.org/10.1142/s0218127498001339.
Texto completoTesis sobre el tema "Switching Transition"
Alsindi, Wassim Zuhair. "Solvent based switching of photophysical properties of transition metal complexes". Thesis, University of Nottingham, 2007. http://eprints.nottingham.ac.uk/13786/.
Texto completoTrapatseli, Maria. "Doping controlled resistive switching dynamics in transition metal oxide thin films". Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/423702/.
Texto completoNishi, Yusuke. "Nonpolar Resistive Switching Based on Quantized Conductance in Transition Metal Oxides". Kyoto University, 2019. http://hdl.handle.net/2433/242544.
Texto completoChoi, Jae-Young. "Analysis of Inductor-Coupled Zero-Voltage-Transition Converters". Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/28537.
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Bertoni, Roman. "Ultrafast photo-switching of spin crossover crystals : coherence and cooperativity". Phd thesis, Université Rennes 1, 2013. http://tel.archives-ouvertes.fr/tel-01016162.
Texto completoGonzalez, Rosillo Juan Carlos. "Volume resistive switching in metallic perovskite oxides driven by the metal-Insulator transition". Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/405305.
Texto completoStrongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering and lattice effects. The exotic phenomena arising from these competing degrees of freedom include superconductivity, ferromagnetism, ferroelectricity and metal-insulator transitions, among others. The use of these exotic phenomena in a new generation of devices with new and enhanced functionalities is continuing inspiring the research community. In this sense, Resistive-Random Access Memories (RRAM) are one of the most promising candidates to win the race towards the universal memory of the future, which could overcome the limitations of actual technologies (Flash and Dynamic-RAM), due to their excellent properties in terms of scalability, endurance, retention and switching speeds. They are based on the Resistive Switching effect (RS), where the application of an electric field produces a reversible, non-volatile change in the resistance between two or more resistive states. This phenomenon has been observed in a large variety of oxide materials, where the motion of oxygen is widely accepted to play a key role in their outstanding properties. However, the exact mechanism governing this effect is material-dependent and for some of them it is still far to be understood. This lack of understanding is actually one of the main bottlenecks preventing the widespread use of this technology. In this thesis, we present a novel Resistive Switching mechanism based on the Metal-Insulator Transition (MIT) in metallic perovskite oxides with strong electron electron interaction. We analyse the RS behaviour of three different families of metallic perovskites: La1-xSrxMnO3, YBa2Cu3O7-δ and RENiO3 and demonstrate that the MIT of these mixed electronic-ionic conductors can be tuned upon the application of an electric field, being able to transform the entire bulk volume. This volume RS is different in nature from interfacial or filamentary type and opens new possibilities of robust device design. Thorough nanoscale electrical characterization of the RS effect in these systems has been performed by means of Conductive-Atomic Force Microscopy (C-AFM). Scanning Tunnelling Spectroscopy (STS) and temperature-dependent transport measurements were performed in the different resistive states to get insight into their electronic features. The nanoscale memristive behaviour of these systems is successfully reproduced at a micrometric scale with W-Au tips in probe station experiments. Using this approach, atmosphere dependent measurements were undertaken, where oxygen exchange with the ambience is strongly evidenced. In addition, we present a proof-of-principle result from a 3-Terminal configuration where the RS effect is applied at the gate of the device. In the particular case of superconducting YBa2Cu3O7-δ films, we have studied the influence of high resistance areas, which are embedded in the material, on the superconducting transport properties enabling vortex pinning modification and paving the way towards novel reconfigurable vortex pinning sites. We interpret the RS results of these strongly correlated systems in terms of a Mott volume transition, that we believe to be of general validity for metallic perovskite complex oxides. We have verified that strongly correlated metallic perovskite oxides are a unique class of materials very promising for RS applications due to its intrinsic MIT properties that boosts a robust volumetric resistive switching effect. This thesis settles down the framework to understand the RS effect in these strongly correlated pervoskites, which could eventually lead to a new generation of devices exploiting the intrinsic MIT of these systems.
Chukmaitova, Dariga. "Sector-Switching in Transition Economies: A Case Study of Kazakhstan's Health Care Sector". Scholarship @ Claremont, 2011. http://scholarship.claremont.edu/cgu_etd/20.
Texto completoOkumu, Emmanuel Latim. "Non-linear prediction in the presence of macroeconomic regimes". Thesis, Uppsala universitet, Statistiska institutionen, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-297222.
Texto completoWang, Ge. "Phase switching behaviour in lead-free Na0.5Bi0.5TiO3-based ceramics". Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/phase-switching-behaviour-in-leadfree-na05bi05tio3based-ceramics(267b315d-3757-4865-9f88-5eeed76d61c4).html.
Texto completoLandrock, Ruth Christine [Verfasser]. "Spatially resolved analysis of resistive switching in transition metal oxide thin films / Ruth Christine Landrock". Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2011. http://d-nb.info/1018206884/34.
Texto completoLibros sobre el tema "Switching Transition"
Diebold, Francis X. Regime switching with time-varying transition probabilities. Philadelphia: Federal Reserve Bank of Philadelphia, Economic Research Division, 1993.
Buscar texto completoThe Chinese road to high technology: A study of telecommunications switching technology in the economic transition. New York: St. Martin's Press, 1999.
Buscar texto completoOffice, General Accounting. Telecommunications: Additional federal efforts could help advance digital television transition : report to the ranking minority member, Subcommittee on Telecommunications and the Internet, Committee on Energy and Commerce, House of Representatives. [Washington, D.C.]: General Accounting Office (441 G St. NW, Room LM, Washington, 20548), 2002.
Buscar texto completoSwitching Sides: Making the Transition from Obedience to Agility. Taylor Trade Publishing, 1999.
Buscar texto completoLane, Jeffrey. Code Switching. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780199381265.003.0003.
Texto completoShen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 2014.
Buscar texto completoShen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan Limited, 1999.
Buscar texto completoShen, X. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 1999.
Buscar texto completoThe Art Of Switching Up: A Simple guide to a profitable transition from gown to town. Nigeria: Exude Communications, 2019.
Buscar texto completoBao, Yun, Carl Chiarella y Boda Kang. Particle Filters for Markov-Switching Stochastic Volatility Models. Editado por Shu-Heng Chen, Mak Kaboudan y Ye-Rong Du. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780199844371.013.9.
Texto completoCapítulos de libros sobre el tema "Switching Transition"
Wong, Franklin J. y Shriram Ramanathan. "Electrical Transport in Transition Metal Oxides". En Resistive Switching, 165–96. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527680870.ch6.
Texto completoXiao, Huafeng, Ruibin Wang, Chenhui Niu, Yun Liu y Kairong Qian. "Zero-Current-Transition TLIs with Switching-Loss-Free". En CPSS Power Electronics Series, 25–52. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3038-6_3.
Texto completoIwai, S., Y. Okimoto, M. Ono, H. Matsuzaki, A. Maeda, H. Kishida, H. Okamoto y Y. Tokura. "Ultrafast insulator-to-metal switching by photoinduced Mott transition". En Springer Series in Chemical Physics, 340–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-27213-5_105.
Texto completoBecker, M. F., A. B. Buckman, R. M. Walser, T. Lépine, P. Georges y A. Brun. "Femtosecond Switching of the Solid-State Phase Transition in VO2". En Springer Series in Chemical Physics, 320–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-85176-6_115.
Texto completoShakouri, A., I. Gravé, Y. Xu y A. Yariv. "Multi λ Controlled Operation of Quantum Well IR Detectors Using Electric Field Switching and Rearrangement". En Quantum Well Intersubband Transition Physics and Devices, 135–50. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_11.
Texto completoLinne, Thomas. "A Markov Switching Model of Stock Returns: An Application to the Emerging Markets in Central and Eastern Europe". En East European Transition and EU Enlargement, 371–79. Heidelberg: Physica-Verlag HD, 2002. http://dx.doi.org/10.1007/978-3-642-57497-9_23.
Texto completoSneps-Sneppe, Manfred, Dmitry Namiot y Maris Alberts. "Channel Switching Protocols Hinder the Transition to IP World: The Pentagon Story". En Lecture Notes in Computer Science, 185–95. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-30859-9_16.
Texto completoBognár, Tomas, Jozef Komorník y Magda Komorníková. "Application of Regime-Switching Models of Time Series with Cubic Spline Transition Function". En Soft Methodology and Random Information Systems, 581–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-44465-7_72.
Texto completoGonzalez-Rosillo, Juan Carlos, Rafael Ortega-Hernandez, Júlia Jareño-Cerulla, Enrique Miranda, Jordi Suñe, Xavier Granados, Xavier Obradors, Anna Palau y Teresa Puig. "Volume Resistive Switching in Metallic Perovskite Oxides Driven by the Metal-Insulator Transition". En Electronic Materials: Science & Technology, 289–310. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-42424-4_12.
Texto completoYajima, Naonari, Toshi H. Arimura y Taisuke Sadayuki. "Energy Consumption in Transition: Evidence from Facility-Level Data". En Economics, Law, and Institutions in Asia Pacific, 129–50. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6964-7_8.
Texto completoActas de conferencias sobre el tema "Switching Transition"
Chan, Yuen-Chuen y Kunio Tada. "Polarization Independent Optical Modulation with Tensile-Strained GaAs-InAIAs Quantum Wells grown on GaAs Substrate". En Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.pmb2.1.
Texto completoRannow, Michael B. y Perry Y. Li. "Soft Switching Approach to Reducing Transition Losses in an On/Off Hydraulic Valve". En ASME 2009 Dynamic Systems and Control Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/dscc2009-2617.
Texto completoTsai, Chin-Chun, Yi-Chi Lee y Hsiang-Chen Chui. "All-optical switching using cesium two-photon transition". En 2013 6th International Conference on Advanced Infocomm Technology (ICAIT). IEEE, 2013. http://dx.doi.org/10.1109/icait.2013.6621567.
Texto completoMagyari-Köpe, B. y Y. Nishi. "Resistive Switching in Transition Metal Oxide ReRAM Devices". En 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-7-1.
Texto completoGorzelic, Patrick, Prasad Shingne, Jason Martz, Anna Stefanopoulou, Jeff Sterniak y Li Jiang. "A Low-Order HCCI Model Extended to Capture SI-HCCI Mode Transition Data With Two-Stage Cam Switching". En ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6275.
Texto completoWang, Feiling, Gene H. Haertling y Kewen K. Li. "Photo-Activated Phase Transition In Antiferroelectric Thin Films For Optical Switching And Storage*". En Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/ods.1994.tud5.
Texto completoWoodward, T. K., B. Tell, W. H. Knox, M. T. Asom y J. B. Stark. "Low-Responsivity GaAs/AlAs Asymmetric Fabry-Perot Modulators". En Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.sps99.
Texto completoLee, Jeremy y Mohammad Tehranipoor. "LS-TDF: Low-Switching Transition Delay Fault Pattern Generation". En 26th IEEE VLSI Test Symposium (vts 2008). IEEE, 2008. http://dx.doi.org/10.1109/vts.2008.48.
Texto completoRiazmontazer, Hossein, Arash Rahnamaee, Alireza Mojab, Siamak Mehrnami, Sudip K. Mazumder y Milos Zefran. "Closed-loop control of switching transition of SiC MOSFETs". En 2015 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2015. http://dx.doi.org/10.1109/apec.2015.7104438.
Texto completoManiv, Eran. "Electrical switching in a magnetically intercalated transition metal dichalcogenide". En Spintronics XIII, editado por Henri-Jean M. Drouhin, Jean-Eric Wegrowe y Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2567451.
Texto completoInformes sobre el tema "Switching Transition"
Misas A., Martha y María Teresa Ramírez-Giraldo. Colombian economic growth under Markov switching regimes with endogenous transition probabilities. Bogotá, Colombia: Banco de la República, diciembre de 2006. http://dx.doi.org/10.32468/be.425.
Texto completoYılmaz, Fatih. Understanding the Dynamics of the Renewable Energy Transition: The Determinants and Future Projections Under Different Scenarios. King Abdullah Petroleum Studies and Research Center, mayo de 2022. http://dx.doi.org/10.30573/ks--2021-dp25.
Texto completoMilovanovic, N., D. W. Blundell y J. W. G. Turner. Transition Quality Between Spark Ignition and Homogeneous Charge Compression Ignition Modes Using Two Different VVT Strategies: Cam Profile Switching and Phasing Strategy Versus Fully Variable Valve Train Strategy. Warrendale, PA: SAE International, mayo de 2005. http://dx.doi.org/10.4271/2005-08-0159.
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