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Artículos de revistas sobre el tema "Switching ratio"

Autor: Grafiati
Publicado: 25 de mayo de 2024

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1

Adams, Michael J. y Shannon K. Yee. "Thermal switching ratio of semiconducting polymers with spatially graded doping". Journal of Applied Physics 133, n.º 6 (14 de febrero de 2023): 064501. http://dx.doi.org/10.1063/5.0138758.

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The switching ratio of a thermal switch is a key design parameter, and electrically activated switches based on thermoelectric effects have been reported to produce large switching ratios over a wide range of temperatures. Previous switches based on the Seebeck effect have switching ratios that are limited by the thermoelectric figure-of-merit [Formula: see text]. Perhaps, more importantly, they are limited by their device construction of alternating p-type and n-type materials with soldered junctions. Alternatively, we show that semiconducting polymers with spatially graded doping can offer similar switching ratios due to a volumetric heat absorption effect. This occurs in heavily doped polymers, which exhibit a sharp decrease in the Seebeck coefficient as charge carriers become fully delocalized. Such heat absorption is analogous to the Thomson effect, where heat is locally absorbed due to temperature-dependent variation of the Seebeck coefficient. Here, a theoretical model is derived to solve the 1D heat equation with spatially graded doping, allowing for optimization of the doping profile for a given material system. Four different material systems are compared according to an analysis of reported measurements to determine the upper limit of the switching ratio. A hypothetical Thomson switch based on poly(3,4-ethylenedioxythiophene) doped with ferric tosylate can produce switching ratios up to 12 under a thermal bias of 10 K, a threefold increase compared to a Peltier switch of the same material. Like a Peltier switch, the switching ratio of a Thomson switch diverges under a small thermal bias. Under a large thermal bias, the switching ratio converges toward that of an equivalent Peltier switch.
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2

Rajewski, Remigiusz. "The Optical Signal-to-Crosstalk Ratio for the MBA(N, e, g) Switching Fabric †". Sensors 21, n.º 4 (23 de febrero de 2021): 1534. http://dx.doi.org/10.3390/s21041534.

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The banyan-type switching networks, well known in switching theory and called the logdN switching fabrics, are composed of symmetrical switching elements of size d×d. In turn, the modified baseline architecture, called the MBA(N,e,g), is only partially built from symmetrical optical switching elements, and it is constructed mostly from asymmetrical optical switching elements. Recently, it was shown that the MBA(N,e,g) structure requires a lower number of passive as well as active optical elements than the banyan-type switching fabric of the same capacity and functionality, which makes it an attractive solution. However, the optical signal-to-crosstalk ratio for the MBA(N,e,g) was not investigated before. Therefore, in this paper, the optical signal-to-crosstalk ratio in the MBA(N,e,g) was determined. Such crosstalk influences the output signal’s quality. Thus, if such crosstalk is lower, the signal quality is better. The switching fabric proposed in the author’s previous work has lower optical signal losses than a typical Beneš and banyan-type switching networks of this same capacity and functionality, which gives better quality of transmitted optical signals at the switching node’s output. The investigated MBA(N,e,g) architecture also contains one stage fewer than banyan-type network of the same capacity, which is an essential feature from the optical switching point of view.
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3

Kasahara, Hiroyuki, Tatsuyoshi Okimoto y Katsumi Shimotsu. "Modified Quasi-Likelihood Ratio Test for Regime Switching". Japanese Economic Review 65, n.º 1 (27 de noviembre de 2013): 25–41. http://dx.doi.org/10.1111/jere.12027.

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4

H, Sudheer, Kodad SF y Sarvesh B. "Improved Sensorless Direct Torque Control of Induction Motor Using Fuzzy Logic and Neural Network Based Duty Ratio Controller". IAES International Journal of Artificial Intelligence (IJ-AI) 6, n.º 2 (1 de junio de 2017): 79. http://dx.doi.org/10.11591/ijai.v6.i2.pp79-90.

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This paper presents improvements in Direct Torque control of an induction motor using Fuzzy logic with Fuzzy logic and neural network based duty ratio controller. The conventional DTC (CDTC) of induction motor suffers from major drawbacks like high torque and flux ripples and poor transient response. Torque and flux ripples are reduced by replacing hysteresis controller and switching table with Fuzzy logic switching controller (FDTC). In FDTC the selected switching vector is applied for the complete switching time period. The FDTC steady state performance can be improved by using duty ratio controller, the selected switching vector is applied only for the time determined by the duty ratio (δ) and for the remaining time period zero switching vector is applied. The selection of duty ratio using Fuzzy logic and neural networks is projected in this paper. The effectiveness proposed methods are evaluated using simulation by Matlab/Simulink.
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5

M. A. Eid, Mahmoud, Ashraf S. Seliem, Ahmed Nabih Zaki Rashed, Abd El-Naser A. Mohammed, Mohamed Yassin Ali y Shaimaa S. Abaza. "Duobinary modulation/predistortion techniques effects on high bit rate radio over fiber systems". Indonesian Journal of Electrical Engineering and Computer Science 21, n.º 2 (1 de febrero de 2021): 978. http://dx.doi.org/10.11591/ijeecs.v21.i2.pp978-986.

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<span>The work has presented duobinary modulation and predistortion techniques for the radio over fiber system enhancement for achieving security level. Duobinary modulation technique has more compact modulated spectral linewidth with standard non return to zero modulation code. Different NRZ/RZ rectangle shape employed that are namely exponential rectangle shape (ERS), and Gaussian rectangle shape (GRS) for different transmission bit rates. Switching bias voltage, and switching RF voltage based LiNbO<sub>3</sub> modulator are changed to measure the performance parameters of the radio over fiber (RoF) system. Predistortion technique improves the linearity of transmitter amplifiers and it is considered as a power efficiency technique. The optimum values of the Q-factor, data error rate (BER), electrical power, signal gain, noise figure, and light signal/noise ratio are achieved with 8 Volt for both switching biases/switching RF signal at 100 GHz. Signal quality/BER and electrical power after the receiver enhancement ratio by using this technique at different RF signal frequencies. </span>
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6

Kwon, Jae Hyun, Hyun Cheol Koo, Hyun Jung Yi y Suk Hee Han. "Edge Shape Effect on Switching Behavior in a Small Ferromagnetic Pattern". Solid State Phenomena 124-126 (junio de 2007): 911–14. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.911.

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Switching behavior and domain structure greatly depends on the edge shape of mesoscopic patterns. In our simulation, permalloy patterns with elliptical and tapered edge need 80% and 50% more switching field, respectively, than a rectangle for the same overall aspect ratio of four. In the switching dynamics, vortex nucleation and its initial location play a great role in deciding switching field. Elliptical and tapered patterns show high magnetic remanence, which is advantageous for non-volatile device application. It is also demonstrated that small control of tapered edge makes it possible to change the switching behavior without the variation of overall aspect ratio.
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7

Neubauer, M. y J. Wallaschek. "Analytical and experimental investigation of the frequency ratio and switching law for piezoelectric switching techniques". Smart Materials and Structures 17, n.º 3 (20 de marzo de 2008): 035003. http://dx.doi.org/10.1088/0964-1726/17/3/035003.

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8

Miyahara, Tsuyoshi, Toshifumi Kosugi, Ayumi Nita, Sasagu Hamada, Atsuko Hiura, Naomi Mori, Yuki Hachiya, Naomi Hirakawa, Hidetoshi Sato y Hisashi Matsunaga. "Opioid switching to oxycodone injection using simple conversion ratio". Palliative Care Research 9, n.º 4 (2014): 125–30. http://dx.doi.org/10.2512/jspm.9.125.

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9

Mercadante, Sebastiano. "Switching to methadone: ’ad libitum‘ or ” xed dose ratio?" Palliative Medicine 18, n.º 1 (enero de 2004): 71. http://dx.doi.org/10.1191/0269216304pm860xx.

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10

Dash, Sidhartha, Girija Shankar Sahoo y Guru Prasad Mishra. "Current switching ratio optimization using dual pocket doping engineering". Superlattices and Microstructures 113 (enero de 2018): 791–98. http://dx.doi.org/10.1016/j.spmi.2017.12.025.

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11

Zhang, Xin, Caichi Liu, Gang Ren, Shiyun Li, Chenghao Bi, Qiuyan Hao y Hui Liu. "High-Switching-Ratio Photodetectors Based on Perovskite CH3NH3PbI3 Nanowires". Nanomaterials 8, n.º 5 (10 de mayo de 2018): 318. http://dx.doi.org/10.3390/nano8050318.

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12

Wang, Dong Liang, Min Wan y Huan You Pan. "Study on Response Characteristics of Switching Zirconia Oxygen Sensor for Air-Fuel Ratio Control". Advanced Materials Research 343-344 (septiembre de 2011): 150–55. http://dx.doi.org/10.4028/www.scientific.net/amr.343-344.150.

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The time delay between the changed quantity of the injected fuel and the detection of the resulting change of the air-fuel ratio determines the dynamic nature of the closed-loop control for air-fuel ratio, and the response delay of oxygen sensor itself is a main effect factor. The response characteristics of switching zirconia oxygen sensor will change and even deteriorate with the increasing service time of oxygen sensor. In this paper, the response characteristics of switching zirconia oxygen sensor and the impact of response slowing on air-fuel ratio and emissions are studied through engine bench test, the impact of response delay of switching zirconia oxygen sensor on air-fuel ratio control is analysed, and a new controller of air-fuel ratio based on discrete PI controller is proposed.
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13

NAKATA, SHUNJI, HIROSHI MAKINO, RYOTA HONDA, MASAYUKI MIYAMA y YOSHIO MATSUDA. "ANALYSIS OF VOLTAGE, CURRENT AND ENERGY DISSIPATION OF STEPWISE ADIABATIC CHARGING OF A CAPACITOR USING A NONRESONANT INDUCTOR CURRENT". Journal of Circuits, Systems and Computers 23, n.º 03 (marzo de 2014): 1450039. http://dx.doi.org/10.1142/s021812661450039x.

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This paper describes characteristics of stepwise adiabatic charging with an inductor current by controlling switching transistors. An exact analytical resolution is obtained by using a vector comprising a voltage and a current. From a matrix calculation, the voltage and current can be written with solutions of the characteristic equation, power supply voltage, the switching ratio in the switching transistor circuit, and the number of switchings. Using the expression, the voltage and current in the stepwise adiabatic charging method can be derived clearly. As a result, it is clarified analytically that, in N-step charging, the current is reduced to 1/N so that the energy dissipation is reduced to 1/N. Next, the experimental switching transistor circuit with the controller is described, which is composed of discrete ICs. The experimental inductor current in the circuit is investigated. The measured current is reduced to 1/N in N-step charging, which is consistent with the simulated one from the theory. It is also confirmed experimentally from the average power supply current that power consumption is reduced to 1/N.
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14

Lacković, Marko. "Quality of Service Aware Call Admission Control in Cell Based Multi-Service Photonic Network". Journal of Communications Software and Systems 6, n.º 1 (21 de marzo de 2010): 10. http://dx.doi.org/10.24138/jcomss.v6i1.194.

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The article tackles the problem of quality of service assurance in photonic networks. The idea of multi-servicephotonic network model with the coexistence of optical circuit and packet switching mechanisms and cell communication is used as a basis for service differentiation in the optical domain. Cell loss ratio as a key performance indicator determines the required optical switching mechanism. Service provisioning is performed using call admission control mechanism with real-time cell loss ratio estimation procedure. Service blocking probability calculation utilizes discrete event simulation of service provision and teardown requests applied to core network topology from COST 266 project. Three simulation scenarios are included in the analysis – pure optical packet switching network, and coexistence of optical packet and circuit switching with and without possibility of communication redirection between the switching mechanisms. Simulation scenarios are additionally altered with the cell loss ratio constraint and number of delay lines.
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15

Shin, Dongkyu, Igor Golosnoy y John McBride. "Development of switching performance evaluator and arc modelling tool for low-voltage switching devices". COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, n.º 6 (5 de noviembre de 2018): 1943–57. http://dx.doi.org/10.1108/compel-03-2016-0112.

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Purpose The purpose of this paper is to investigate a reliable evaluator of arc re-ignition and to develop a numerical tool for accurate prediction of arc behaviour of low-voltage switching devices (LVSDs) prior to empirical laboratory testing of real products. Design/methodology/approach Two types of interruption tests have been carried out in the investigation of re-ignition evaluators. Arc modelling tool coupled with the load circuit has been developed to predict arc characteristics based on conventional magnetohydrodynamics theory, with special attention given to Lorentz force acting on the arc column and surface phenomena on the splitter plate. The model assumptions have been validated by experimental observation of arc motion and current and voltage waveforms. Findings It is found that the exit-voltage across the switching device and the ratio of system to exit-voltage at the current zero point are reliable evaluators for prediction of re-ignition. Where the voltage ratio is positive, instantaneous re-ignition does not occur. Further, the probability of re-ignition is very low if the voltage ratio is in the rage of −1.3 to 0. Originality/value It is observed that the voltage ratio can be considered as a reliable global evaluator of re-ignition, which can be used for various types of LVSD test conditions. In addition, it is shown that arc modelling allows a good prediction of the current and voltage waveforms, arc motion as well as the exit-voltage, which can be used to obtain the evaluator of re-ignition.
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16

Senapati, Asim, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta y Siddheswar Maikap. "Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM". Electronics 9, n.º 7 (7 de julio de 2020): 1106. http://dx.doi.org/10.3390/electronics9071106.

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Diode-like threshold switching and high on/off ratio characteristics by using an Al/Ag/Al2O3/TiN conductive bridge resistive random access memories (CBRAM) have been obtained. The 5 nm-thick Al2O3 device shows superior memory parameters such as low forming voltage and higher switching uniformity as compared to the 20 nm-thick switching layer, owing to higher electric field across the material. Capacitance-voltage (CV) characteristics are observed for the Ag/Al2O3/TiN devices, suggesting the unipolar/bipolar resistive switching phenomena. Negative capacitance (NC) at low frequency proves inductive behavior of the CBRAM devices due to Ag ion migration into the Al2O3 oxide-electrolyte. Thicker Al2O3 film shows diode-like threshold switching behavior with long consecutive 10,000 cycles. It has been found that a thinner Al2O3 device has a larger on/off ratio of >108 as compared to a thicker one. Program/erase (P/E) cycles, read endurance, and data retention of the thinner Al2O3 oxide-electrolyte shows superior phenomena than the thicker electrolyte. The switching mechanism is also explored.
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17

Senapati, Spandan y Rahul Vaze. "Online Convex Optimization with Switching Cost and Delayed Gradients". ACM SIGMETRICS Performance Evaluation Review 51, n.º 4 (22 de febrero de 2024): 22–23. http://dx.doi.org/10.1145/3649477.3649490.

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We consider the online convex optimization (OCO) problem with quadratic and linear switching cost when at time t only gradient information for functions f T , T < t is available. For L-smooth and µ-strongly convex objective functions, we propose an algorithm (OMGD) with a competitive ratio of at most 4(L+5)+ 16(L+5)/µ for the quadratic switching cost, and also show the bound to be order-wise tight in terms of L, µ. In addition, we show that the competitive ratio of any online algorithm is at least maxΩ(L),Ω( L/√µ ) when the switching cost is quadratic. For the linear switching cost, the competitive ratio of the OMGD algorithm is shown to depend on both the path length and the squared path length of the problem instance, in addition to L, µ, and is shown to be order-wise, the best competitive ratio any online algorithm can achieve.
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18

Lin, Bor-Ren y Chu-Xian Dai. "Wide Voltage Resonant Converter Using a Variable Winding Turns Ratio". Electronics 9, n.º 2 (21 de febrero de 2020): 370. http://dx.doi.org/10.3390/electronics9020370.

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This paper presents a inductor–inductor–capacitor (LLC) resonant converter with variable winding turns to achieve wide voltage operation (100–400 V) and realize soft switching operation over the entire load range. Resonant converters have been developed for consumer power units in computers, power servers, medical equipment, and adaptors due to the advantages of less switching loss and better circuit efficiency. The main disadvantages of the LLC resonant converter are narrow voltage range operation owing to wide switching frequency variation and limited voltage gain. For computer power supplies with hold-up time function, electric vehicle battery chargers, and for power conversion in solar panels, wide input voltage or wide output voltage operation capability is normally demanded for powered electronics. To meet these requirements, the variable winding turns are used in the presented circuit to achieve high- or low-voltage gain when Vin is at low- or high-voltage, respectively. Therefore, the wide voltage operation capability can be implemented in the presented resonant circuit. The variable winding turns are controlled by an alternating current (AC) power switch with two back-to-back metal-oxide-semiconductor field-effect transistors (MOSFETs). A 500-W prototype is implemented and test results are presented to confirm the converter performance.
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19

Li Xuemeng, 李雪蒙, 卢旸 Lu Yang, 钱哲楷 Qian Zhekai, 张天恒 Zhang Tianheng, 翟彦蓉 Zhai Yanrong y 毕美华 Bi Meihua. "基于改进的标记率调制的光标签交换". Acta Optica Sinica 43, n.º 9 (2023): 0906002. http://dx.doi.org/10.3788/aos221846.

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20

Tang, Yuanyuan, Xingwen Zhang, Yu Lu, Xiulin Li y Peng Chen. "The light-modified resistance switching of BaTiO3/ZnO films". Functional Materials Letters 14, n.º 06 (12 de julio de 2021): 2150025. http://dx.doi.org/10.1142/s1793604721500259.

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A light-modified resistance switching (RS) memory device with BaTiO3 / ZnO structure is fabricated by radio frequency magnetron sputtering technology. The device exhibits stable resistive switching behavior in the dark and under illumination, respectively. In the dark, the device’s high/low resistance ratio ([Formula: see text] / [Formula: see text] is more than 104 at 0.1 V read voltage, and the set/reset voltage ([Formula: see text] < 0.4 V, [Formula: see text] > −0.2 V) is low. The RS of the device can be modulated by white light. When the device is irradiated by white light with intensity of 250 uw/cm2, the high/low resistance ratio is modulated from 104 to 102, and the set/reset voltage ([Formula: see text] < 0.3 V, [Formula: see text] > −0.2 V) is still low.
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21

CHENG, Yulun y Longxiang YANG. "Dynamic opportunistic cooperative strategy with log likelihood ratio switching threshold". Journal of Computer Applications 33, n.º 10 (13 de noviembre de 2013): 2715–18. http://dx.doi.org/10.3724/sp.j.1087.2013.02715.

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22

Lu, Yu, Feng Chen y Lidai Wang. "An invertible wavefront switching system with a high extinction ratio". Optics & Laser Technology 131 (noviembre de 2020): 106466. http://dx.doi.org/10.1016/j.optlastec.2020.106466.

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23

Sapp, Shawn A., Gregory A. Sotzing y John R. Reynolds. "High Contrast Ratio and Fast-Switching Dual Polymer Electrochromic Devices". Chemistry of Materials 10, n.º 8 (agosto de 1998): 2101–8. http://dx.doi.org/10.1021/cm9801237.

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24

Chen, Nan y Huidan Yu. "Mechanism of axis switching in low aspect-ratio rectangular jets". Computers & Mathematics with Applications 67, n.º 2 (febrero de 2014): 437–44. http://dx.doi.org/10.1016/j.camwa.2013.03.018.

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25

Lim, Teik-Cheng. "Composite microstructures with Poisson’s ratio sign switching upon stress reversal". Composite Structures 209 (febrero de 2019): 34–44. http://dx.doi.org/10.1016/j.compstruct.2018.10.074.

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26

Juan, W. H. y S. W. Pang. "High-aspect-ratio Si vertical micromirror arrays for optical switching". Journal of Microelectromechanical Systems 7, n.º 2 (junio de 1998): 207–13. http://dx.doi.org/10.1109/84.679383.

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27

Meyer, Jason, Stephen Yurkovich y Shawn Midlam-Mohler. "Air-to-Fuel Ratio Switching Frequency Control for Gasoline Engines". IEEE Transactions on Control Systems Technology 21, n.º 3 (mayo de 2013): 636–48. http://dx.doi.org/10.1109/tcst.2012.2188631.

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28

Zhipeng, Yan y Li Shenghong. "Hedge ratio on Markov regime-switching diagonal Bekk–Garch model". Finance Research Letters 24 (marzo de 2018): 49–55. http://dx.doi.org/10.1016/j.frl.2017.06.015.

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29

Cao, Qing, Limiao Xiong, Xudong Yuan, Pengcheng Li, Jun Wu, Hailin Bi y Jun Zhang. "Resistive switching behavior of the memristor based on WS2 nanosheets and polyvinylpyrrolidone nanocomposites". Applied Physics Letters 120, n.º 23 (6 de junio de 2022): 232105. http://dx.doi.org/10.1063/5.0087862.

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Ag/tungsten disulfide (WS2)–polyvinylpyrrolidone (PVP)/Cu memristors based on monolayer WS2 nanosheets and polyvinylpyrrolidone (PVP) nanocomposites were fabricated, and the influence of PVP content on the switching behaviors was investigated. The results indicate that the WS2–PVP based memristors show write-once read-many times (WORM) memory behavior. Remarkable resistive switching results such as a low operating voltage (VSET < 1 V), a high switching ratio (>103), good endurance (>100 cycles), and data retention time (>200 s) are obtained. With the increase in the PVP content, the device VSET gradually increases, and the switching ratio first slightly increases and then remarkably decreases. The double logarithm I–V curves verify that the switching mechanism of the devices is the trap-controlled space charge limited current mechanism, which is explained with the energy band diagram.
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30

Huang, Yanzi, Lingyu Wan, Jiang Jiang, Liuyan Li y Junyi Zhai. "Self-Powered Resistance-Switching Properties of Pr0.7Ca0.3MnO3 Film Driven by Triboelectric Nanogenerator". Nanomaterials 12, n.º 13 (27 de junio de 2022): 2199. http://dx.doi.org/10.3390/nano12132199.

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As one of the promising non-volatile memories (NVMs), resistive random access memory (RRAM) has attracted extensive attention. Conventional RRAM is deeply dependent on external power to induce resistance-switching, which restricts its applications. In this work, we have developed a self-powered RRAM that consists of a Pr0.7Ca0.3MnO3 (PCMO) film and a triboelectric nanogenerator (TENG). With a traditional power supply, the resistance switch ratio achieves the highest switching ratio reported so far, 9 × 107. By converting the mechanical energy harvested by a TENG into electrical energy to power the PCMO film, we demonstrate self-powered resistance-switching induced by mechanical movement. The prepared PCMO shows excellent performance of resistance switching driven by the TENG, and the resistance switch ratio is up to 2 × 105, which is higher than the ones ever reported. In addition, it can monitor real-time mechanical changes and has a good response to the electrical signals of different waveforms. This self-powered resistance switching can be induced by random movements based on the TENG. It has potential applications in the fields of self-powered sensors and human-machine interaction.
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31

Jaberi, Amin y Mehran Tadjfar. "Comparative study on interfacial oscillations of rectangular and elliptical liquid jets". Proceedings of the Institution of Mechanical Engineers, Part G: Journal of Aerospace Engineering 234, n.º 7 (17 de enero de 2020): 1272–86. http://dx.doi.org/10.1177/0954410019900723.

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The instability characteristics and flow structures of water jets injected from rectangular and elliptical nozzles with aspect ratios varying from 2 to 6 were experimentally studied and compared. Shadowgraph technique was employed for flow visualization, and structures on the liquid jet surface were captured using high speed photography. It was found that disturbances originating from the nozzle geometry initially perturbed the liquid column, and then, at high jet velocities, disturbances generated within the flow dominated the jet surface. It was also found that rectangular nozzles introduced more disturbances into the flow than the elliptical ones. The characteristic parameters of axis-switching phenomenon including wavelength, frequency, and amplitude were measured and compared. Axis-switching wavelength was found to increase linearly with Weber number. Also, the wavelengths of rectangular jets were longer than the elliptical jets. Further, the frequency of axis-switching was shown to be reduced with increase of both Weber number and aspect ratio. It was observed that the axis-switching amplitude increased monotonically, reached a peak, and then decreased gradually. It was also found that the axis-switching amplitude varied with Weber number. At lower values of Weber number, the rectangular nozzles had higher amplitude than the elliptical nozzles. However, at higher values of Weber number, this relation was reversed, and the elliptical nozzles had the higher axis-switching amplitudes. This reversal Weber number decreased with the orifice aspect ratio. The reversal Weber number for aspect ratio of 4 was about 289, and it had decreased to 144 for the aspect ratio of 6.
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32

Chang, Yong-Nong, Hung-Liang Cheng, Hau-Chen Yen, Chien-Hsuan Chang y Wei-Di Huang. "An Interleaved DC/DC Converter with Soft-switching Characteristic and high Step-up Ratio". Applied Sciences 10, n.º 6 (22 de marzo de 2020): 2167. http://dx.doi.org/10.3390/app10062167.

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This study presents a dc/dc converter featuring soft-switching characteristic, high conversion efficiency, and high step-up ratio. The proposed circuit is composed of two parallel-connected boost converters. Only one coupled inductor is used to replace inductors of the boost converters which are interleaved operated at discontinuous-conduction mode (DCM). The current ripples at the input and the output terminals are reduced due to the interleaved operation. By freewheeling the current of the coupled inductor to discharge the stored electric charges in the parasitic capacitors of the active switches, both active switches can fulfill zero-voltage switching on (ZVS). Owing to DCM operation, the freewheeling diodes can fulfill zero-current switching off (ZCS). Therefore, the power conversion efficiency is improved. The operation principle for each operation mode is analyzed in detail and design equations for the component parameters are provided in this report. Finally, a prototype 200 W 48–400 V converter was implemented and measured to demonstrate the effectiveness of the proposed circuit.
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33

Chiou, Juing-Shian y Jen-Hsing Li. "Robust Delay Independent Stability Analysis for the Switched Interval Time-Delay Systems with Time-Driven Switching Strategy". Mathematical Problems in Engineering 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/410349.

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Some new criteria of delay independent stability for the switched interval time-delay systems are deduced. The switching structure does depend on time-driven switching strategies. The total activation time ratio of the switching law can be determined to guarantee that the switched interval time-delay system is exponentially stable.
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34

Hu, Yunfeng, Bin Tang, Chaoyi Chen, Lexing Hu, Qingming Huang, Jiaqi Cai, Jinbo Xie, Bin Li y Zhaohui Wu. "A Bridged-Switch Energy-Efficient Switching Scheme for Successive Approximation Register Analog-to-Digital Converters with a Low-Complexity Capacitor Drive Circuit". Applied Sciences 13, n.º 23 (1 de diciembre de 2023): 12897. http://dx.doi.org/10.3390/app132312897.

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In recent years, due to the rise of the Internet of Things (IoT), various sensors have come to be in great demand for IoT devices. Analog-to-digital converters (ADCs) act as an important part of receivers in sensors. To improve the uptime of IoT devices, a bridged-switch energy-efficient switching scheme for successive approximation register (SAR) ADCs with a low-complexity capacitor drive circuit is proposed. The technique of top-plate sampling and closed-loop charge recycling is used in the proposed switching scheme so that neither the first nor the second comparison consumes switching energy. The third comparison uses bridge switches to connect the subarray to the main array, effectively reducing switching’s energy consumption. Only the least significant bit (LSB) is dependent on the accuracy of Vcm; thus, the last comparison consumes little switching energy. The proposed switching scheme achieves an average switching energy value of 47.5 CV2ref, which is 96.52% lower than that of the conventional capacitor switching scheme and reduces the area by 75%. The other major circuit modules employed are bootstrapped switches, a fully dynamic comparator, and dynamic SAR logic. The proposed ADC was simulated under the conditions of 180 nm CMOS process and 1 MS/s, resulting in a 9.8-bit effective number of bits (ENOB), a signal-to-noise and distortion ratio (SNDR) of 60.76 dB, a spurious-free dynamic range (SFDR) of 69.85 dB, a power consumption of 14.7 μW, and a figure of merit (FoM) of 16.55 fJ/conv.-step.
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35

Zhang, Haoyu y Takanori Isobe. "An Improved Charge-Based Method Extended to Estimating Appropriate Dead Time for Zero-Voltage-Switching Analysis in Dual-Active-Bridge Converter". Energies 15, n.º 2 (17 de enero de 2022): 671. http://dx.doi.org/10.3390/en15020671.

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This paper presents a comprehensive analysis of zero-voltage-switching (ZVS) realization with an improved charge-based method by considering both voltage dependency parasitic capacitance and dead time in dual-active-bridge (DAB) converters, when the voltage ratio between the primary and secondary sides does not match the turn ratio of the transformer. For this purpose, a unified equivalent circuit is proposed to represent the switching motions at all possible switching instances under the condition of one-leg manipulation. The combinations of switching cases can be presented in a table to build the corresponding equivalent circuit for ZVS analysis. Combined with the improved charge-based method, the common solutions of the minimum required switching current and the appropriate dead-time range for each equivalent circuit to realize ZVS are deduced. The allowable range of the dead time for ZVS as a function of the switching current is analyzed to determine the appropriate dead time. Once the switching current and dead-time range are derived, the model-based lowest switching current control method can be used to achieve ZVS by using the appropriate amount of both factors. Experiments using a 4 kW DAB prototype were conducted to verify the theoretical analyses.
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36

Yao, Zizhu, Liang Pan, Lizhen Liu, Jindan Zhang, Quanjie Lin, Yingxiang Ye, Zhangjing Zhang, Shengchang Xiang y Banglin Chen. "Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway". Science Advances 5, n.º 8 (agosto de 2019): eaaw4515. http://dx.doi.org/10.1126/sciadv.aaw4515.

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Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (~0.2 V), a high ON/OFF ratio (~105), and a high rectification ratio (~105). It is not only the first MOF with voltage-gated proton conduction but also the first single material showing both rectifying and resistive switching effects. By single-crystal x-ray diffraction analyses, the mechanism of the resistive switching has been demonstrated.
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37

Li, Hongwei, Bai Sun, Lujun Wei, Jianhong Wu, Xiangjiang Jia, Wenxi Zhao y Peng Chen. "Light enhanced resistive switching in BaTiO3/CoFeB/BaTiO3 structure". Functional Materials Letters 09, n.º 05 (octubre de 2016): 1650052. http://dx.doi.org/10.1142/s1793604716500521.

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Obvious resistive switching is observed under light irradiation in BaTiO3/CoFeB/BaTiO3 trilayer prepared by magnetron sputtering system while the same sample shows extremely small resistive switching effect in the dark. Under the irradiation of 31.4[Formula: see text]mW/cm2, the ratio of high resistance to low resistance (OFF/ON ratio) of the sample annealed at 600[Formula: see text]C can keep about 80 in more than 70 test cycles without obvious decay. The current conduction mechanism is PF emission in LRS and space charge limited conduction (SCLC) in HRS. The origin of the resistive switching behavior can be explained by considering the trapping and detrapping of charges.
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38

Jang, DongJun y Min-Woo Kwon. "Self-Rectifying Resistive Switching Memory Based on Molybdenum Disulfide for Reduction of Leakage Current in Synapse Arrays". Electronics 12, n.º 22 (15 de noviembre de 2023): 4650. http://dx.doi.org/10.3390/electronics12224650.

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Resistive random-access memory has emerged as a promising non-volatile memory technology, receiving substantial attention due to its potential for high operational performance, low power consumption, temperature robustness, and scalability. Two-dimensional nanostructured materials play a pivotal role in RRAM devices, offering enhanced electrical properties and physical attributes, which contribute to overall device improvement. In this study, the self-rectifying switching behavior in RRAM devices is analyzed based on molybdenum disulfide nanocomposites decorated with Pd on SiO2/Si substrates. The switching layer integration of Pd and MoS2 at the nanoscale effectively mitigates leakage currents decreasing from cross-talk in the RRAM array, eliminating the need for a separate selector device. The successful demonstration of the expected RRAM switching operation and low switching dispersion follows the application of a Pd nanoparticle embedding method. The switching channel layer is presented as an independent (Pd nanoparticle coating and MoS2 nanosheet) nanocomposite. The switching layer length (4000 μm) and width (7000 μm) play an important role in a lateral-conductive-filament-based RRAM device. Through the bipolar switching behavior extraction of RRAM, the formation of the conductive bridges via electronic migration is explained. The fabricated Pd-MoS2 synaptic RRAM device results in a high resistive current ratio for a forward/reverse current higher than 60 at a low resistance state and observes a memory on/off ratio of 103, exhibiting stable resistance switching behavior.
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39

De Angelis, C., G. F. Nalesso y C. G. Someda. "Optimization of the extinction ratio in a self-switching slab waveguide". Journal of the Optical Society of America B 10, n.º 9 (1 de septiembre de 1993): 1581. http://dx.doi.org/10.1364/josab.10.001581.

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40

Molavi, Navid, Ehsan Adib y Hosein Farzanehfard. "Soft‐switching bidirectional DC–DC converter with high voltage conversion ratio". IET Power Electronics 11, n.º 1 (enero de 2018): 33–42. http://dx.doi.org/10.1049/iet-pel.2016.0771.

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41

Zorko, Benjamin, D. P. Child y M. A. C. Hotchkis. "A fast switching electrostatic deflector system for actinide isotopic ratio measurements". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 268, n.º 7-8 (abril de 2010): 827–29. http://dx.doi.org/10.1016/j.nimb.2009.10.041.

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42

Tawfik, Sherif Abdulkader, X. Y. Cui, S. P. Ringer y C. Stampfl. "High On/Off Conductance Switching Ratio via H-Tautomerization in Quinone". Journal of Chemical Theory and Computation 11, n.º 9 (7 de agosto de 2015): 4154–58. http://dx.doi.org/10.1021/acs.jctc.5b00505.

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43

Tanaka, Yoshiaki, Minoru Akiyama y Shinichiro Hosaka. "Cell transfer ratio control-type priority control method for ATM switching". Electronics and Communications in Japan (Part I: Communications) 75, n.º 8 (1992): 16–25. http://dx.doi.org/10.1002/ecja.4410750802.

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44

Baji, Zsófia, László Pósa, György Molnár, Zoltán Szabó, Mátyás Volom, Angelja Kjara Surca, Goran Drazic y János Volk. "VO2 layers with high resistive switching ratio by atomic layer deposition". Materials Science in Semiconductor Processing 162 (agosto de 2023): 107483. http://dx.doi.org/10.1016/j.mssp.2023.107483.

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45

Zhang, Wenbin, Cheng Wang, Gang Liu, Xiaojian Zhu, Xinxin Chen, Liang Pan, Hongwei Tan et al. "Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine)". Chem. Commun. 50, n.º 80 (2014): 11856–58. http://dx.doi.org/10.1039/c4cc04696j.

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46

Hirai, Takamasa, Yuya Sakuraba y Ken-ichi Uchida. "Observation of the giant magneto-Seebeck effect in a metastable Co50Fe50/Cu multilayer". Applied Physics Letters 121, n.º 16 (17 de octubre de 2022): 162404. http://dx.doi.org/10.1063/5.0118382.

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We report the observation of the giant magneto-Seebeck (GMS) effect in an epitaxially grown Co50Fe50/Cu multilayer film with metastable bcc Cu spacers under an in-plane temperature gradient. The magnetization-dependent switching ratio of the Seebeck coefficient, GMS ratio, and switching ratio of the thermoelectric power factor reach approximately −50% and 280% at room temperature, respectively, which are higher than those previously reported in magnetic multilayers with the current-in-plane geometry. By measuring the temperature dependence of both GMS and giant magnetoresistance (GMR) effects, we found that the GMS ratio remains high at high temperatures, while the GMR ratio quickly decreases with increasing temperature, where the spin-dependent electron scattering dominantly affects the large GMS effect in the Co50Fe50/Cu multilayer.
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47

Zhu, Yong Dan, Cheng Hu y An You Zuo. "Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure". Advanced Materials Research 1061-1062 (diciembre de 2014): 333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.1061-1062.333.

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we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.
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48

Tang, Yu Ming y Chung Wo Ong. "Room-temperature hydrogen-induced resistivity response of Pd/Mg–Ni films". Journal of Materials Research 24, n.º 6 (junio de 2009): 1928–35. http://dx.doi.org/10.1557/jmr.2009.0226.

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The structure and the response of the effective electrical resistivity 〈ρ〉 in hydrogenation–dehydrogenation processes of palladium-coated/magnesium-nickel (Pd/Mg–Ni) films were investigated as functions of Mg-to-Ni ratio, substrate temperature, and thickness of Pd overcoat. Films of noncrystalline structures with various Mg-to-Ni ratios showed prominent hydrogen-(H-)induced switching effect of 〈ρ〉. A film is supposed to contain segregated noncrystalline regions of different Mg-to-Ni ratios. The regions of an Mg-to-Ni ratio close to 2 are responsible for the switching processes. At room temperature, a dehydrogenation process is much slower than a hydrogenation process. Crystallization hindered the H-induced switching effect of 〈ρ〉. The use of a thicker Pd overcoat accelerated the change of 〈ρ〉 in the initial hydrogenating process but diminished the contrast. Results led to some discussions on the mechanisms governing the switching effects.
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49

Wang, Hao y Dian Ren Chen. "Chip Technology Based on High Efficiency DC Power Supply". Advanced Materials Research 1030-1032 (septiembre de 2014): 1384–87. http://dx.doi.org/10.4028/www.scientific.net/amr.1030-1032.1384.

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The switching power supply is the use of modern power electronics, by controlling the switching transistor turn-on and turn-off time ratio, maintaining a stable output voltage of the power supply. Switching power supply technology at the core, it is mainly divided into AC / DC and DC / DC two categories. Switching power supply eliminates bulky frequency transformers, replacing tens of kHz, MHz or even hundreds of kHz frequency transformer. Since the adjustment pipe work in the off state, and thus low power consumption and high efficiency.
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50

An, Yuehua, Xia Shen, Yuying Hao, Pengfei Guo y Weihua Tang. "Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation". Journal of Nanoscience and Nanotechnology 20, n.º 5 (1 de mayo de 2020): 3283–86. http://dx.doi.org/10.1166/jnn.2020.17426.

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Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.
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