Tesis sobre el tema "Switching oscillation"
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Lewandowski, Przemyslaw, Samuel M. H. Luk, Chris K. P. Chan, P. T. Leung, N. H. Kwong, Rolf Binder y Stefan Schumacher. "Directional optical switching and transistor functionality using optical parametric oscillation in a spinor polariton fluid". OPTICAL SOC AMER, 2017. http://hdl.handle.net/10150/626462.
Texto completoRonaldson, David Campbell. "Regenerative oscillations and electrically induced bistable switching in an InSb etalon". Thesis, Heriot-Watt University, 1991. http://hdl.handle.net/10399/820.
Texto completoAthanasius, Germane Information Technology & Electrical Engineering Australian Defence Force Academy UNSW. "Robust decentralised output feedback control of interconnected grid system". Awarded by:University of New South Wales - Australian Defence Force Academy, 2008. http://handle.unsw.edu.au/1959.4/39591.
Texto completoIcli, Burcak. "Towards Autonomous Molecular Machines: Switching Coupled To An Oscillating Reaction". Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608749/index.pdf.
Texto completoWang, Yin. "Self-Oscillating Unified Linearizing Modulator". Thesis, Virginia Tech, 2012. http://hdl.handle.net/10919/35915.
Texto completoMaster of Science
Kukharev, A. V. y A. L. Daniluyk. "Influence of the inverse faraday effect on switching and oscillations of magnetization in single-domain nanoparticles". Thesis, Sumy State University, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20648.
Texto completoKhan, Mohammad Asif. "Study of Magnetization Switching in Coupled Magnetic Nanostructured Systems using a Tunnel Diode Oscillator". ScholarWorks@UNO, 2018. https://scholarworks.uno.edu/honors_theses/107.
Texto completoRadu, Cosmin. "Study of Magnetization Switching in Coupled Magnetic Nanostructured Systems". ScholarWorks@UNO, 2008. http://scholarworks.uno.edu/td/894.
Texto completoFinke, Mareike. "Brain mechanisms of executive control: Event-related potentials and oscillations in schizophrenic patients and healthy controls during task-switching". Doctoral thesis, Universitat de Barcelona, 2013. http://hdl.handle.net/10803/98349.
Texto completoEsta tesis tuvo como objetivo investigar los procesos de cambio de tarea en pacientes esquizofrénicos y controles sanos mediante un paradigma de cambio de tarea con indicadores explícitos. El estudio I examinó el uso de conocimiento previo durante el cambio de tarea, manipulando la actualización sensorial y el control ejecutivo en ensayos con indicadores informativos y no-informativos. Los cambios sensoriales en el estímulo indicador modularon los potenciales evocados (PEs) asociados al indicador sólo cuando contuvieron información conceptual sobre la tarea. La preparación para la tarea facilitó una re-asignación estímulo-respuesta ante el estímulo diana, suscitando respuestas más rápidas en todos los ensayos repetitivos. Los resultados apoyan la hipótesis de una detección rápida de los cambios sensoriales (del indicador) cuando éstos son relevantes para la tarea, y son contrarios a los beneficios por repetición de tarea debidos a una preparación (priming) perceptiva por repetición. El segundo estudio examinó las modulaciones en las oscilaciones neuronales en las bandas alfa y theta de los datos del estudio I. Los resultados también revelaron importantes beneficios en la ejecución conductual. En los ensayos de cambio de tarea durante la actualización y la implementación de la tarea, el ritmo alfa estuvo relacionado con ambos procesos evocados por el indicador sensorial y el estímulo diana, respectivamente. Por el contrario, el ritmo theta estuvo más relacionado con las etapas iniciales de la preparación de tarea. Estos dos estudios refuerzan la hipótesis de que las modulaciones en la actividad cerebral asociadas a un cambio del indicador de tarea no son provocadas por un cambio sensorial simple, sino que están relacionadas con un cambio de meta de orden superior. En el tercer estudio un protocolo de cambio de tarea con indicador explícito fue administrado a un grupo de pacientes esquizofrénicos y comparado con una muestra control sana. Los resultados sugieren que las alteraciones observadas en la conducta de cambio de tarea no estuvieron relacionadas específicamente con una reconfiguración estímulo-respuesta de orden superior, sino a un déficit en la implementación de dicha representación configuracional de la tarea durante la presentación del estímulo diana en presencia de información irrelevante y conflictiva.
Lanz, B. (Brigitte). "Compact current pulse-pumped GaAs–AlGaAs laser diode structures for generating high peak-power (1–50 watt) picosecond-range single optical pulses". Doctoral thesis, Oulun yliopisto, 2016. http://urn.fi/urn:isbn:9789526213569.
Texto completoTiivistelmä ”Gain switching” (vahvistuskytkentä) on tunnettu tekniikka lyhyiden (<100 ps) optisten pulssien generoimiseen laserdiodeilla. Kaupallisia laserdiodirakenteita käyttäen optinen energia rajoittuu kuitenkin 10…100 pJ:n tasolle. Tällöinkin, erityisesti suurilla energiatasoilla, optisessa pulssissa ilmenee voimakkaita jälkioskillaatioita. Tässä väitöskirjassa tutkittiin ja kehitettiin kokeellisesti varmennettuja laserdiodilähetinrakenteita tavoitteena saavuttaa >1 nJ:n optisen pulssin energia ja ~100 ps:n pulssinpituus gain-switching -toimintamoodissa. Tavoitteena oli myös minimoida jälkipulssien energia. Tutkimuksen pääsisältönä on kaksi toimintaperiaatetta: Toisessa tekniikassa päähuomio kohdistuu laseridiodin virta-ajuriin, johon kehitettiin elektroniikka, joka kykenee tuottamaan nopeita virtapulsseja laajalla pulssivirta-alueella. Virtapulssin nopeuden kasvattamisen (<1 ns) osoitettiin edistävän gain switching -ilmiötä. Toisena tekniikkana tutkittiin räätälöityä laserdiodirakennetta, joka sisäisen toimintansa perusteella tuottaa dynaamisessa ohjaustilanteessa tehokkaan ja nopean laserpulssin. Kummankin periaatteen osoitettiin toimivan huonelämpötilassa (23±3°C) ilman erillistä jäähdytystä. Ensimmäisessä ratkaisussa käytettiin nopeaa gallium-arsenidi (GaAs) -avalanchetransistoria virtakytkimenä, jolla saavutettiin <1 ns FWHM injektiovirtapulssi 10 A:n virtatasolla. Tällainen virtapulssi on riittävän lyhyt virittämään ”gain switching” -ilmiön nJ-energiatasolla. Lupaavin rakenne toiseksi ratkaisuksi oli reunaemittoiva puolijohdelaseri, jossa epäsymmetrinen aaltoputki ja aktiivinen alue ovat sijoitettu normaalista laserdiodirakenteesta poiketen rinnakkain. Tällä rakenteella voitiin tuottaa ~100 ps levyisiä (FWHM) ja >3 nJ optisen kokonaisenergian omavia laserpulsseja edullisella pii-pohjaisella (Si) elektroniikalla luoduilla 1.5–2 ns:n (FWHM) ≤17 A injektiovirtapulsseilla. Suorituskykyä saatiin edelleen parannettua istuttamalla saturoiva absorbaattori (SA) laserin optiseen onteloon. Tämän osoitettiin vähentävän jälkioskillaatioiden muodostumista
Growden, Tyler A. "III-V Tunneling Based Quantum Devices for High Frequency Applications". The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469199253.
Texto completoHenke, E. F. Markus, Samuel Schlatter y Iain A. Anderson. "Soft dielectric elastomer oscillators driving bioinspired robots". Mary Ann Liebert, 2017. https://tud.qucosa.de/id/qucosa%3A32850.
Texto completoMuñoz-Arcos, Christian Daniel. "Optical Microwave Signal Generation for Data Transmission in Optical Networks". Thesis, Toulouse, ISAE, 2020. http://www.theses.fr/2020ESAE0013.
Texto completoThe massive growth of telecommunication services and the increasing global data traffic boostthe development, implementation, and integration of different networks for data transmission.An example of this development is the optical fiber networks, responsible today for theinter-continental connection through long-distance links and high transfer rates. The opticalnetworks, as well as the networks supported by other transmission media, use electricalsignals at specific frequencies for the synchronization of the network elements. The qualityof these signals is usually determined in terms of phase noise. Due to the major impact ofthe phase noise over the system performance, its value should be minimized.The research work presented in this document describes the design and implementation ofan optoelectronic system for the microwave signal generation using a vertical-cavity surfaceemittinglaser (VCSEL) and its integration into an optical data transmission system. Consideringthat the proposed system incorporates a directly modulated VCSEL, a theoreticaland experimental characterization was developed based on the laser rate equations, dynamicand static measurements, and an equivalent electrical model of the active region. This proceduremade possible the extraction of some VCSEL intrinsic parameters, as well as thevalidation and simulation of the VCSEL performance under specific modulation conditions.The VCSEL emits in C-band, this wavelength was selected because it is used in long-haullinks. The proposed system is a self-initiated oscillation system caused by internal noise sources,which includes a VCSEL modulated in large signal to generate optical pulses (gain switching).The optical pulses, and the optical frequency comb associated, generate in electricaldomain simultaneously a fundamental frequency (determined by a band-pass filter) and severalharmonics. The phase noise measured at 10 kHz from the carrier at 1.25 GHz was -127.8dBc/Hz, and it is the lowest value reported in the literature for this frequency and architecture.Both the jitter and optical pulse width were determined when different resonantcavities and polarization currents were employed. The lowest pulse duration was 85 ps andwas achieved when the fundamental frequency was 2.5 GHz. As for the optical frequencycomb, it was demonstrated that its flatness depends on the electrical modulation conditions.The flattest profiles are obtained when the fundamental frequency is higher than the VCSELrelaxation frequency. Both the electrical and the optical output of the system were integrated into an optical transmitter.The electrical signal provides the synchronization of the data generating equipment,whereas the optical pulses are employed as an optical carrier. Data transmissions at 155.52Mb/s, 622.08 Mb/s and 1.25 Gb/s were experimentally validated. It was demonstrated thatthe fundamental frequency and harmonics could be extracted from the optical data signaltransmitted by a band-pass filter. It was also experimentally proved that the pulsed returnto-zero (RZ) transmitter at 1.25 Gb/s, achieves bit error rates (BER) lower than 10−9 whenthe optical power at the receiver is higher than -33 dBm. la plus faible, 85 ps, a été obtenue lorsque la fréquence fondamentale du système était de 2,5 GHz. En ce qui concerne le peigne de fréquences optiques, il a été démontré que la formedu peigne dépend des conditions de modulation électrique et que les profils les plus platssont obtenus lorsque la fréquence fondamentale est supérieure à la fréquence de relaxationdu VCSEL. Les sorties électrique et optique du système ont été intégrées dans un émetteur optique. Lesignal électrique permet la synchronisation de l’équipement responsable de la génération desdonnées, tandis que les impulsions optiques sont utilisées comme porteuse optique. La transmissionde données à 155,52 Mb/s, 622,08 Mb/s et 1,25 Gb/s a été validée expérimentalement
Li, Shuai. "Threshold Switching and Self-Oscillation in Niobium Oxide". Phd thesis, 2018. http://hdl.handle.net/1885/144181.
Texto completoHuang, Jin-feng y 黃錦峯. "Double-prism domain PPLN for simultaneous laser Q-switching and optical parametric oscillation in a Nd:YVO4 Laser". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/15465562193563230464.
Texto completo國立中央大學
光電科學與工程學系
102
In this thesis, we have devoted to integrate two device functions in a monolithic LiNbO3 crystal. These two devices are an EO beam deflector and an optical parametric generator (OPG) or optical parametric oscillator (OPO). The PPLN crystal has a double-prism domain (DPD) structure has been designed and fabricated in this work. We further inserted this DPD PPLN crystal in a Nd:YVO4 laser system to simultaneously function as a laser Q switch and an intracavity optical parametric generator (OPG) and optical parametric oscillator (OPO). The PPLN crystal has a double-prism domain (DPD) structure with a domain period of 30 m to simultaneously as an electro-optic (EO) beam deflector (and therefore an EO Q-switch in the laser cavity) and an optical parametric down converter. The characterized deflection angle of the DPD PPLN device was 1o at the voltage about 300V. And at 180V Q-switching voltage and 1-kHz switching rate, we measured a down-converted signal at 1550 nm with pulse energy of 8.14 J and pulse width of 3.5ns ( peak power of ~2.3 kW) from the constructed IOPO at 7.5W diode pump power. Continuous wavelength tuning of the IOPO signal was also demonstrated.
Wu, Jianxiong. "Harmonic Oscillations in Optical Waveguide Arrays". Thesis, 2013. http://hdl.handle.net/1807/43338.
Texto completoLai, Wei-Chen y 賴韋臣. "A Highly-efficient Switching-mode Class-E Oscillator Design". Thesis, 2013. http://ndltd.ncl.edu.tw/handle/z56g2x.
Texto completo國立臺北科技大學
電腦與通訊研究所
101
The injection-locked oscillators (ILOs) have found their ways in many applications, such as frequency dividers, self-oscillating mixers (SOMs), synchronized amplifier, and spectrum sensing circuits. In the recent years, many researchers have proposed the wireless non-contact vital-sign sensors based on the microwave Doppler radar. As the wireless medical telemetry services (WMTS) are evolving rapidly, the demand for simple, low-power consumption, and small cardiopulmonary monitors are growing accordingly as well. This thesis presents a switching-mode ILO that is based on the class-E operation invented by Sokals in 1975. A switching amplifier and a feedback resonator form the closed-loop for such a circuit to oscillate at a certain desired frequency. The class-E operation benefits the oscillator with higher efficiency than conventional ones. This work is aimed to a noncontact vital-sign sensing system with higher efficiency and lower cost. The last part of this thesis shows the proposed dual tuning voltage Class-E ILO. Based on the proposed architecture, the measured phase noise is -106.71 dBc/Hz at 1-MHz offset from 2.4 GHz, the oscillation frequency can be varied from 2.37 GHz to 2.43 GHz, the measured frequency tuning range is 2.5%.
Chen, Shiao-Hui y 陳曉暉. "Study on Wide-Band Voltage-Controlled Oscillator with Switching Capacitor Mode". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/94721164541726210443.
Texto completo雲林科技大學
電子與資訊工程研究所
96
This thesis studies how to optimize and how to establish the design procedure for voltage-controlled oscillator (VCO) lying in the front end of transceiver. This thesis promotes the good quality of communication by means of decreasing power dissipation and phase noise. Two kinds of chips with different band of voltage-controlled oscillator (VCO) were implemented. From the data between simulations and measurement of these chips shows good agreement. This thesis presents one low phase noise of the complementary cross-coupled voltage-controlled oscillator (VCO), which oscillates at a range of 3.64∼5.37GHz for WiMAX(World Interoperability for Microwave Access). This VCO utilizes switching capacitor modules in which eight channels are able to be selected. Moreover, MOS varactors are used as fine tuning. The fully integrated VCO provides excellent performance. The bandwidth of frequency is 1.73GHz, that is, the tuning range is 38%. The power dissipation of the core circuit is 13.7mW under 1.8V supply and phase noises all are smaller than -122dBc/Hz at 1MHz offset. This VCO was made by TSMC 0.18μm 1P6M CMOS standard process and the chip area is 0.96 × 0.83 (mm2). This thesis presents the other low power and low phase noise voltage-controlled oscillator (VCO) for optical communication. This proposed VCO is also made by TSMC 0.18μm 1P6M CMOS standard process. The range of oscillation is from 8.72 to 9.66GHz. At a frequency offset of 1MHz from the 9.46GHz carrier, the measured phase noise is -107.3dBc/Hz. The power dissipation of the core circuit is 6.7mW under 1.8V supply. The bandwidth of frequency is 0.94GHz. The VCO consists of the LC tank, the complementary cross-coupled pair, the memory-reduced tail transistors and output buffers. The chip area is 0.69 × 0.56 (mm2).
Chou, Ming-ching y 周明慶. "A Low Distortion and High Power Efficiency Self-Oscillating Switching Power Amplifier". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/22268554881978104912.
Texto completo國立中山大學
電機工程學系研究所
93
The design of a low distortion and high efficiency self-oscillating power amplifier is presented. It is designed using TSMC 0.35µm, 2p4m CMOS technology. We use noise shaping to reduce the THD (Total Harmonic Distortion). This design can be applied to hearing aids. The supply voltage is 1.5V for hearing aids. Experimental results demonstrate that the proposed amplifier has the total harmonic distortion (THD) of 0.0751% and power efficiency around 90.1%. Measurement result reveals that this circuit can be up to 0.25% of the THD and 89.7% of the power efficiency. This result shows that the proposed power amplifier has superior performance in THD and power efficiency, and this circuit is applicable to low-distortion, high-efficiency, and low-voltage applications, such as the hearing aids.
Mollah, A. K. M. Kamruzzaman. "Design of a tunable CML-based differential ring oscillator with short start-up and switching transiets". Thesis, 2004. http://hdl.handle.net/2429/16181.
Texto completoApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
Wu, Chung-Lin y 吳忠霖. "A Synchronous, Self-Oscillating, Fully Integrated CMOS DC-DCConverter with a New Current Sensor and Adaptive Mode-Switching Mechanism". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/53071081460110492383.
Texto completo元智大學
電機工程學系
95
In this thesis, a high-efficiency CMOS DC-DC converter with a new active current sensor and adaptive modes-switching mechanism is presented. The new active current sensor is designed and employed to detect the inductor current level so as to limit the maximum inductor current and switch operation modes adaptively. In the proposed DC-DC converter, there are three operational control modes for optimum efficiency. The proposed control mechanism enables the converter to switch between CCM and DCM modes adaptively such that high conversion efficiency can be maintained no matter how the load current may change during normal operation. At very light load, on the other hand, the standby mode is utilized to reduce the frequency dependent losses, thus enhancing the conversion efficiency. The efficiency of the converter is up to 94% with the variation of the output voltage less than 20 mV between 50mA and 300mA of the load current value. The DC-DC converter operates at a switching frequency range between 300k and 1700 KHz with the supply voltage from 2.4V to 4.2 V. This chip and all the devices were fabricated in the TSMC 0.35-μm 2P4M CMOS process.
Schittler, Neves Fabio. "Universal Computation and Memory by Neural Switching". Doctoral thesis, 2010. http://hdl.handle.net/11858/00-1735-0000-0006-B5D1-6.
Texto completoChung-Lin, Wu. "A Synchronous, Self-Oscillating, Fully Integrated CMOS DC-DC Converter with a New Current Sensor and Adaptive Mode-Switching Mechanism". 2007. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0009-3001200721430500.
Texto completoWu, Chung-Lin y 吳忠霖. "A Synchronous, Self-Oscillating, Fully Integrated CMOS DC-DC Converter with a New Current Sensor and Adaptive Mode-Switching Mechanism". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/58138716458136812928.
Texto completo元智大學
電機工程學系
95
In this thesis, a high-efficiency CMOS DC-DC converter with a new active current sensor and adaptive modes-switching mechanism is presented. The new active current sensor is designed and employed to detect the inductor current level so as to limit the maximum inductor current and switch operation modes adaptively. In the proposed DC-DC converter, there are three operational control modes for optimum efficiency. The proposed control mechanism enables the converter to switch between CCM and DCM modes adaptively such that high conversion efficiency can be maintained no matter how the load current may change during normal operation. At very light load, on the other hand, the standby mode is utilized to reduce the frequency dependent losses, thus enhancing the conversion efficiency. The efficiency of the converter is up to 94% with the variation of the output voltage less than 20 mV between 50mA and 300mA of the load current value. The DC-DC converter operates at a switching frequency range between 300k and 1700 KHz with the supply voltage from 2.4V to 4.2 V. This chip and all the devices were fabricated in the TSMC 0.35-μm 2P4M CMOS process.
De, La Chevrotière Michèle. "On a jump Markovian model for a gene regulatory network". Thesis, 2008. http://hdl.handle.net/1828/933.
Texto completo(7025126), Ahmedullah Aziz. "Device-Circuit Co-Design Employing Phase Transition Materials for Low Power Electronics". Thesis, 2019.
Buscar texto completoPhase transition materials (PTM) have garnered immense interest in concurrent post-CMOS electronics, due to their unique properties such as - electrically driven abrupt resistance switching, hysteresis, and high selectivity. The phase transitions can be attributed to diverse material-specific phenomena, including- correlated electrons, filamentary ion diffusion, and dimerization. In this research, we explore the application space for these materials through extensive device-circuit co-design and propose new ideas harnessing their unique electrical properties. The abrupt transitions and high selectivity of PTMs enable steep (< 60 mV/decade) switching characteristics in Hyper-FET, a promising post-CMOS transistor. We explore device-circuit co-design methodology for Hyper-FET and identify the criterion for material down-selection. We evaluate the achievable voltage swing, energy-delay trade-off, and noise response for this novel device. In addition to the application in low power logic device, PTMs can actively facilitate non-volatile memory design. We propose a PTM augmented Spin Transfer Torque (STT) MRAM that utilizes selective phase transitions to boost the sense margin and stability of stored data, simultaneously. We show that such selective transitions can also be used to improve other MRAM designs with separate read/write paths, avoiding the possibility of read-write conflicts. Further, we analyze the application of PTMs as selectors in cross-point memories. We establish a general simulation framework for cross-point memory array with PTM based selector. We explore the biasing constraints, develop detailed design methodology, and deduce figures of merit for PTM selectors. We also develop a computationally efficient compact model to estimate the leakage through the sneak paths in a cross-point array. Subsequently, we present a new sense amplifier design utilizing PTM, which offers built-in tunable reference with low power and area demand. Finally, we show that the hysteretic characteristics of unipolar PTMs can be utilized to achieve highly efficient rectification. We validate the idea by demonstrating significant design improvements in a Cockcroft-Walton Multiplier, implemented with TS based rectifiers. We emphasize the need to explore other PTMs with high endurance, thermal stability, and faster switching to enable many more innovative applications in the future.