Artículos de revistas: "STM device fabrication"

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Zhao, Zhiyun, Yi Min, Pengxia Zhou, Yanyan Huang y Chonggui Zhong. "Photon-assisted transport through a 1D-dot-graphene similar to STM model device". International Journal of Modern Physics B 31, n.º 21 (18 de agosto de 2017): 1750142. http://dx.doi.org/10.1142/s0217979217501429.

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By using the nonequilibrium Green function method, the photon-assisted electron transport through a graphene-based device similar to STM model is studied theoretically and numerically. The device is composed of a single central site (quantum dot) modulated by an oscillating electric field, a one-dimensional quantum wire and a two-dimensional graphene sheet. Some interesting results on transmission probability and current–voltage ([Formula: see text]–[Formula: see text]) characteristics of the device are given in this paper. In the presence of an oscillating electric field, we find that besides the central two transmission peaks caused by graphene part, there appear photon-assisted peaks which are distributed on both sides of the Fermi level. The positions of the photon-assisted peaks are linear to the frequency of the oscillating electric field, and the widths of the photon-assisted peaks are relevant to the amplitude of the oscillating electric field. It is found that the current–voltage graphs exhibit step growth due to the existence of photon-assisted tunneling. We hope these results may have guidance meaning for the fabrication of optoelectronic devices.

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Goh, Kuan Eng Johnson, L. Oberbeck, M. J. Butcher, N. J. Curson, F. J. Rueß y M. Y. Simmons. "Comparison of GaP and PH3 as dopant sources for STM-based device fabrication". Nanotechnology 18, n.º 6 (10 de enero de 2007): 065301. http://dx.doi.org/10.1088/0957-4484/18/6/065301.

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Wada, Kazumi. "Cathodoluminescence characterization of two-dimensional interface structure of quantum wells". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 754–55. http://dx.doi.org/10.1017/s0424820100176903.

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Exotic properties shown by quantum well structures, typical structures of future electron devices, are sensitive to interface roughness. Extensive studies are, thus, focused on characterization of interface structures. Recent improvement in quantum wire fabrication technology demands for characterizing not only perpendicular-interfaces to the growth direction but also parallel-ones (sidewall-interfaces). Such sophistication needs innovation in two-dimensional and nondestructive characterization technology.In device structures, interfaces are generally located deep in bulk. STM which visualize surface atoms can not monitor such interface. It is, thus, difficult to two- dimensionally characterize the interfaces.Interface steps induce well width fluctuation, which modulates optical transition energy between ground subbands in conduction and valence bands. Thus, interface step structures can be characterized by luminescence spectroscopy. Cathodoluminescence basically meets demand for nondestructive characterization of interface structures in two dimensions.

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Joy, David C. "Limitations of Sem Characterization of Semiconductors". Microscopy and Microanalysis 3, S2 (agosto de 1997): 875–76. http://dx.doi.org/10.1017/s1431927600011260.

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The field of semiconductor materials and devices represents a unique challenge to microscopy and microanalysis because the standard of excellence is constantly changing. Driven by the imperative of Moore's law (illustrated in figure 1) - which predicts that the density of devices in a chip doubles every three years - the spatial resolution that must be achieved increases by a factor of two every five years. The problem of meeting this demand is further enhanced by the widespread sentiment that all e-beam tools used on semiconductors should operate at low beam energies (typically below lkeV). Finally, the increase in device packing density and the expected move to 30cm. diameter wafers as substrates for fabrication also means that the microscopist will be faced with the challenge of rapidly and reliably finding a given device or feature among the 108 or so similar features which are present.The first need is to be able to monitor the basic steps of the fabrication process. Given the assumption that by the year 2001 devices will be built on 0.18μm design rules, it will then be necessary to perform critical dimension metrology with a precision of 2 to 3nm (see figure 2).

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XIE, XIAN NING, HONG JING CHUNG y ANDREW THYE SHEN WEE. "SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION". COSMOS 03, n.º 01 (noviembre de 2007): 1–21. http://dx.doi.org/10.1142/s0219607707000207.

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Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

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Kajimura, Koji. "STM as a Micromachine". Journal of Robotics and Mechatronics 3, n.º 1 (20 de febrero de 1991): 12–17. http://dx.doi.org/10.20965/jrm.1991.p0012.

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A scanning tunneling microscope (STM) is a kind of micromachine, from an instrumentational and functional point of view. In this paper, the present and future status of key technologies of STM instrumentation and miniaturization are discussed after presenting the principle of STM operation. Application of STM functions to nanometer-scale fabrication and ultimate modification of surfaces on an atomic or molecular scale will pave the way for future electron devices and the synthesis of new materials.

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Seniutinas, Gediminas, Armandas Balčytis, Ignas Reklaitis, Feng Chen, Jeffrey Davis, Christian David y Saulius Juodkazis. "Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies". Nanophotonics 6, n.º 5 (17 de junio de 2017): 923–41. http://dx.doi.org/10.1515/nanoph-2017-0008.

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AbstractThe evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

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Ervin, M. H., K. A. Jones, M. A. Derenge, K. W. Kirchnef, M. C. Wood, P. B. Shah, R. D. Vispute, T. Venkatesan, C. Thomas y M. G. Spencer. "An SEM Investigation of Annealing Encapsulants for SiC". Microscopy and Microanalysis 6, S2 (agosto de 2000): 1094–95. http://dx.doi.org/10.1017/s143192760003796x.

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Advancing technology continues to place greater and greater demands on semiconductor devices. It is clear that Si technology alone will not be able to meet all of these demands. Silicon Carbide (SiC) is a promising material for highpower and high-temperature applications, such as SiC devices for controlling power in a more electric vehicle in which the SiC device is cooled by the engine oil (200 C.) SiC is well suited for high-power/temperature applications due to its large bandgap of 3.03 eV (for 6H), high breakdown electric field of 2.4 x 106 V/cm (again for 6H), thermal stability, and chemical inertness. These properties hold the promise of reliable and robust performance, but the latter two also present challenges to fabricating such devices. For instance, a key part of making devices involves selected area doping. This is typically accomplished with ion implantation, because the rate of diffusion is so low, followed with an anneal to remove the implant damage and electrically activate the dopant.

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Shin, Jin Yong, Young Taek Oh, Simon Kim, Hoe Yeon Lim, Bom Lee, Young Chun Ko, Shin Park et al. "Hierarchical Self-Assembly of Thickness-Modulated Block Copolymer Thin Films for Controlling Nanodomain Orientations inside Bare Silicon Trenches". Polymers 13, n.º 4 (13 de febrero de 2021): 553. http://dx.doi.org/10.3390/polym13040553.

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We study the orientation and ordering of nanodomains of a thickness-modulated lamellar block copolymer (BCP) thin film at each thickness region inside a topological nano/micropattern of bare silicon wafers without chemical pretreatments. With precise control of the thickness gradient of a BCP thin film and the width of a bare silicon trench, we successfully demonstrate (i) perfectly oriented lamellar nanodomains, (ii) pseudocylindrical nanopatterns as periodically aligned defects from the lamellar BCP thin film, and (iii) half-cylindrical nanostructure arrays leveraged by a trench sidewall with the strong preferential wetting of the PMMA block of the BCP. Our strategy is simple, efficient, and has an advantage in fabricating diverse nanopatterns simultaneously compared to conventional BCP lithography utilizing chemical pretreatments, such as a polymer brush or a self-assembled monolayer (SAM). The proposed self-assembly nanopatterning process can be used in energy devices and biodevices requiring various nanopatterns on the same device and as next-generation nanofabrication processes with minimized fabrication steps for low-cost manufacturing techniques.

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Lee, Hun Hee, Min Sang Yun, Hyun Wook Lee y Jin Goo Park. "Removing W Polymer Residue from BEOL Structures Using DSP⁺ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study". Solid State Phenomena 195 (diciembre de 2012): 128–31. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.128.

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As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.

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Shirakashi, Jun-ichi y Yasushi Takemura. "SPM fabrication of nanometerscale ferromagnetic metal-oxide devices". Journal of Magnetism and Magnetic Materials 272-276 (mayo de 2004): 1581–83. http://dx.doi.org/10.1016/j.jmmm.2003.12.308.

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Bergman, Eric J. y J. Dusty Leonhard. "Novel Methods for Wet Stripping High Dose Implanted Photoresist Using Sulfur Trioxide". Solid State Phenomena 145-146 (enero de 2009): 281–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.281.

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Ion implantation is one of many critical processes in the fabrication of semiconductor devices. While device geometries have been shrinking, the implant dose has typically been increasing. Historically, photoresist removal has been achieved through a combination of plasma “ashing” and a subsequent wet clean, often using a mixture of sulfuric acid and hydrogen peroxide at elevated temperature. The “piranha” or SPM strip is often followed by an ammonia based clean such as APM to remove particles and sulfate residues from the device. However, device constraints are presently having difficulty accommodating the film loss, surface roughening, high molecular temperatures and hot electron injection which may accompany a plasma ash. [1] The APM clean is also having to undergo modification in order to minimize oxide loss which would adversely affect device performance.

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13

Shenoy, Vedika J., Chelsea ER Edwards, Matthew E. Helgeson y Megan T. Valentine. "Design and characterization of a 3D-printed staggered herringbone mixer". BioTechniques 70, n.º 5 (mayo de 2021): 285–89. http://dx.doi.org/10.2144/btn-2021-0009.

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3D printing holds potential as a faster, cheaper alternative compared with traditional photolithography for the fabrication of microfluidic devices by replica molding. However, the influence of printing resolution and quality on device design and performance has yet to receive detailed study. Here, we investigate the use of 3D-printed molds to create staggered herringbone mixers (SHMs) with feature sizes ranging from ∼100 to 500 μm. We provide guidelines for printer calibration to ensure accurate printing at these length scales and quantify the impacts of print variability on SHM performance. We show that SHMs produced by 3D printing generate well-mixed output streams across devices with variable heights and defects, demonstrating that 3D printing is suitable and advantageous for low-cost, high-throughput SHM manufacturing.

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Yang, Ye y Wan Sheng Zhao. "Fabrication of the Nanoscale Flat-Bottomed and Lamellar Structures on HOPG Surface by STM-Based Electric Lithography". Key Engineering Materials 562-565 (julio de 2013): 45–51. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.45.

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The requirement for fabrication of the nanometer-scale structures has grown up recently due to the advance in the development of the nanoscale electronic-devices or bio-devices. Scanning tunneling microscope (STM)-based electric lithography is one of the potential fabrication approaches to produce nanoscale structures on a variety of materials. This study of the STM-based electric lithography intends to fabricate flat-bottomed and lamellar structures on the graphite surface, which differs from the conventionally fabricated tapered structures. The formation and the comparison of both the lamellar and tapered structures are obtained by applying distinct STM tip geometries in the STM-based electric lithography. On the basis of the experimental results, it is found that the formation of lamellar structures should be attributed to the local electrochemical reaction, while the generation of tapered structures is resulted from the dielectric breakdown in the tip-sample gap.

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You, Minghui, Jiayin Song, Zhaoxin Wang, Bei Wang y Jingsheng Liu. "Efficiency Improvement of Organic Solar Cells Using 350 nm Surface Relief Grating by Holographic Lithography". Nanoscience and Nanotechnology Letters 12, n.º 4 (1 de abril de 2020): 484–89. http://dx.doi.org/10.1166/nnl.2020.3134.

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There was inefficient light absorption in the thin active layers due to optical losses in Organic Solar Cells (OSCs) with relatively large area. Therefore, it is a key issue to have a light trapping structure for highly efficient OSCs. For high performance devices fabrication, a smart grating was fabricated using holographic photolithography incorporated with wet etching technology. Scanning electron microscopy (SEM) images of fabrication were employed before/after spin-coating active layer. With the aid of optical finite difference time Domain (FDTD) simulation for optical effect, the optimized device structure ITO (1D grating)/PEDOT:PSS (40 nm)/PBDB-T:ITIC (100 nm)/PDINO (5 nm)/Al (100 nm) was obtained. The experimental results showed that when the grating period was 350 nm, depth 40 nm, the power conversion efficiencies (PCE) reached to 9.51%, an apparent increase from those of the typical P3HT:PC71BM structure. This work indicates that the diffraction gratings had a potential to realize more efficient organic photovoltaics, if suitable fabrication processing methods can be developed.

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Cardarilli, Gian Carlo, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari y Raj Kumar. "Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device". Electronics 9, n.º 2 (7 de febrero de 2020): 287. http://dx.doi.org/10.3390/electronics9020287.

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An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)–graphene oxide (GO) sol–gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron microscope (SEM) image of the prepared thin film shows an evenly distributed wrinkled surface structure. Transition Metal Oxide (TMO)-based memristive devices are nominees for beyond CMOS Non-Volatile Memory (NVRAM) devices. The two-terminal Metal–TMO (Insulator)–Metal (MIM) memristive device is fabricated using a synthesized ZnO–rGO as an active layer on fluorine-doped tin oxide (FTO)-coated glass substrate. Aluminum (Al) is deposited as a top metal contact on the ZnO–rGO active layer to complete the device. Photo annealing was used to reduce the GO to rGO to make the proposed method suitable for fabricating ZnO–rGO thin-film devices on flexible substrates. The electrical characterization of the Al–ZnO–rGO–FTO device confirms the coexistence of memristive and memimpedance characteristics. The coexistence of memory resistance and memory impedance in the same device could be valuable for developing novel programmable analog filters and self-resonating circuits and systems.

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Pokai, Supawadee, Puenisara Limnonthakul, Mati Horprathum, Sukon Kalasung, Pitak Eiamchai, Saksorn Limwichean, Noppadon Nuntawong, Viyapol Pattantsetakul, Suparat Tuscharoen y Jakrapong Kaewkhao. "Influence of Growth Conditions on Morphology of ZnO Nanorods by Low-Temperature Hydrothermal Method". Key Engineering Materials 675-676 (enero de 2016): 53–56. http://dx.doi.org/10.4028/www.scientific.net/kem.675-676.53.

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Zinc oxide (ZnO) nanorods (NRs) promise high potentials in several applications, such as photovoltaic device, thermoelectric device, sensor and solar cell. In this research, the vertical alignment of ZnO NRs was fabricated by hydrothermal method with various precursor concentrations and growth time on different seed layers (ZnO and Au), which deposited on silicon wafer substrate (100). The crystalline structure and morphology of ZnO NRs have been characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) techniques, respectively. The x-ray diffraction pattern shows that the prepared samples have a strong preferred orientation (002) plane. FE-SEM images of the ZnO NRs, it found that the density and aspect ratio were strongly influenced by the seed layer and precursor concentration. In addition, the aspect ratio of ZnO NRs was increased with increasing growth time. This study provides a cost effective method for the fabrication of well aligned ZnO NRs for nano-electronic devices.

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Posthill, J. B., T. George, D. P. Malta, T. P. Humphreys, R. A. Rudder, G. C. Hudson, R. E. Thomas y R. J. Markunas. "Electron microscopy of natural and epitaxial diamond". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 de agosto de 1993): 1196–97. http://dx.doi.org/10.1017/s0424820100151817.

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Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. Ultimately, it is preferable to use low-defect-density single crystal diamond for device fabrication. We have previously investigated polycrystalline diamond films with transmission electron microscopy (TEM) and scanning electron microscopy (SEM)e.g.1 and homoepitaxial films with SEM-based techniquese.g.2. This contribution describes some of our most recent observations of the microstructure of natural diamond single crystals and homoepitaxial diamond thin films using TEM.We are developing techniques to thin diamonds to electron transparency in the region of interest; particularly as diamond is difficult to mechanically thin. One simple (but time consuming) approach for the fabrication of plan-view diamond TEM samples is to thin only by ion milling. Figs. 1 and 2 show TEM micrographs taken from a (100) natural type IIb (semiconducting) diamond crystal and a (100) natural type la diamond that have been ion milled to electron transparency.

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Chugh, Srishti, Luis Echegoyen y Anupama B. Kaul. "Hybrid Zero-Dimensional C60 clusters with Graphene – Synthesis, Fabrication and Transport Characteristics". MRS Advances 2, n.º 60 (2017): 3727–32. http://dx.doi.org/10.1557/adv.2017.432.

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ABSTRACTIn this work, a new method is presented to synthesize graphene-C60 hybrid materials using an electrophoretic deposition technique to study the graphene-C60 interactions. Electronic measurements of the structure were conducted before and after the attachment of C60 clusters at different applied voltages on graphene devices. The assembled clusters of C60 on mechanically exfoliated graphene were investigated using Raman Spectroscopy and Scanning Electron Microscopy (SEM), which reveal a uniform morphology of C60 on graphene. The results indicate that graphene-C60 hybrids are excellent electron accepting/charge transporting materials which can provide an effective route to facilitate the application of these hybrids in electronic or opto-electronic device platforms.

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Dzurak, A. S., M. Y. Simmons, A. R. Hamilton, R. G. Clark, R. Brenner, T. M. Buehler, N. J. Curson et al. "Construction of a silicon-based solid state quantum computer". Quantum Information and Computation 1, Special (diciembre de 2001): 82–95. http://dx.doi.org/10.26421/qic1.s-8.

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We discuss progress towards the fabrication and demonstration of a prototype silicon-based quantum computer. The devices are based on a precise array of 31P dopants embedded in 28Si. Fabrication is being pursued via two complementary pathways – a ‘top-down’ approach for near-term production of few-qubit demonstration devices and a ‘bottom-up’ approach for large-scale qubit arrays. The ‘top-down’ approach employs ion implantation through a multi-layer resist structure which serves to accurately register the donors to metal control gates and single-electron transistor (SET) read-out devices. In contrast the ‘bottom-up’ approach uses STM lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. Techniques for qubit read-out, which utilise coincidence measurements on novel twin-SET devices, are also presented.

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HOSSEINI, A., H. H. GÜLLÜ, E. COSKUN, M. PARLAK y C. ERCELEBI. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS". Surface Review and Letters 26, n.º 06 (julio de 2019): 1850205. http://dx.doi.org/10.1142/s0218625x18502050.

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Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO2 film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV–visual (UV–Vis) spectral and dark current-voltage (I–V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6[Formula: see text]eV and transmission was around 65–85% in the spectral range of 320–1100[Formula: see text]nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I–V characteristic was studied to determine the possible conduction mechanisms and diode parameters.

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Fillion, Ray. "Embedded Actives and Its Industry Effects". International Symposium on Microelectronics 2011, n.º 1 (1 de enero de 2011): 000382–87. http://dx.doi.org/10.4071/isom-2011-tp5-paper5.

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Over the 60 plus year history of microelectronics packaging, electronic devices have been mounted onto an interconnect structure to form a microelectronics circuit. The devices could be bare chips, CSPs or packaged components such as SMT or thru-hole carriers. The interconnect structures could be circuit boards, ceramic substrates or flex circuits. This methodology has enabled a clear divide between the fabrication, assembly and test of the semiconductor device, the fabrication and test of the interconnect structure and the assembly and test of the component/substrate assembly. Over the past decade a new packaging methodology, embedded actives (chips), has been developed that changes all of these industry norms. In an embedded actives packaging approach, one or more bare or chip scale semiconductor devices are embedded within the interconnect structure. Although these approaches have significant electrical performance, size and cost benefits, the normal barriers between chip packaging, substrate fabrication and component assembly are removed. The interconnect structure is not completed prior to component embedding and the embedded component cannot be tested at packaged part level without the interconnect structure. This complicates electrical testing and makes it virtually impossible to differentiate between a defective component, a defective interconnect or a defective component to substrate contact. This paper will look at the history of embedded active developments and go into the various processes and structures being used. It will cover their electrical, reliability and size advantages and will address the revolutionary changes that the microelectronics industry must make to effectively utilize these technologies.

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Li, Yayun, Bo Li y Longtu Li. "Fabrication of 3D photocatalytic α-Fe2O3 structure using direct ink writing method". Modern Physics Letters B 28, n.º 07 (13 de marzo de 2014): 1450051. http://dx.doi.org/10.1142/s0217984914500511.

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Three-dimensional (3D) photocatalytic devices are economical and environmental, since they can be easily recycled and reused. In this paper, a kind of 3D photocatalytic device with a rod diameter of 250 μm was fabricated using the aqueous-based α- Fe 2 O 3 ceramic inks by direct ink writing (DIW) method. The properties of the DIW woodpile samples were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM) and optical microscope. The result shows that the ink with solid content of 71.4 wt.% exhibits a shear thinning behavior and proper viscoelastic properties, which ensure a feasible extrusion in the whole shaping process. The sample sintered at 800°C in air causes photocatalytic degradation of methylene blue (MB) solution under the ultraviolet (UV) light. The photocatalytic properties of the α- Fe 2 O 3 woodpile structure was characterized by the UV-visible light spectrophotometer, and it was found to be better than that of bulk sample with same weight for its higher specific surface. The DIW technique would offer a potential method for the design and fabrication of 3D photocatalytic devices.

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Zhuo, Min, An Ding Chen, Jian Zhu y Long Zhang. "Deep Hole Fabrication Based on ICP Process". Advanced Materials Research 60-61 (enero de 2009): 293–97. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.293.

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This paper presents deep-hole etching process by inductively coupled plasma (ICP),the hole is higher than 400um ,and its diameter is 200um wide. Etching process successfully used in anchor fabrication below 150 um deep in micro-inertial devices, is first used in deep-hole etching .The result is badly, the sidewall surface is coarse, and the sidewall perpendicularity is poor,the dimension difference between upper and down diameter is as large as 35um.Because with the depth increasing , deep-hole etching brings new problem, such as fluorine(F) radical and ions distributing very differently between in down and upper area, also extracting reactant and temperature distribution . To solve above problems, process parameters such as gas flow mass and time in one reaction cycle, source and substrate power, reaction pressure and temperature should be adjusted. Through several experiments, optimal process is applied and the result is satisfied .From SEM figure, The the sidewall surface is smoother, the sidewall perpendicularity is good, the dimension difference between upper and down diameter is controlled in 1.6um,the sidewall angle is 89.78°. The process has been used in deep-hole fabrication of micromachined filter, and the rate of device enhances largely at present.

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Ye, Hao, Ju-Hyung Kim y Soonmin Seo. "Fabrication and Applications of Flexible Stacked Devices via Open-Hole Integration". Science of Advanced Materials 9, n.º 9 (1 de septiembre de 2017): 1464–67. http://dx.doi.org/10.1166/sam.2017.3183.

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Lewis, Brian J., D. F. Baldwin, P. N. Houston, B. Smith, P. Kwok, J. Thompson A. Mueller y L. Racz. "Processing and Reliability Assessment of Silicon Based, Integrated Ultra High Density Substrates". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (1 de enero de 2011): 002272–313. http://dx.doi.org/10.4071/2011dpc-tha23.

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High density interconnect (HDI) advances in substrate technology have allowed considerable improvements in processing more complex, compact devices. Chip Scale Packaging (CSP) and multi-chip modules (MCM) have continued to decrease in size and increase in functionality, moving closer to be more like flip chip technology. Improvements in wafer structuring allow for tremendous possibilities for device functionality; however a limit does exists on what traditional substrate fabrication methods will allow. A push in developing through silicon vias (TSVs) and use of alternative materials, other than organic or flex, are needed to enable new packaging technology developments. As needed, an alternative substrate has been developed that uses Silicon-based technology, photo-defined vias and the capability of semiconductor level routing density. It also includes the possibility to open cavities in the substrate to embed integrated die. This technology has opened up many possibilities for fabricating Ultra high density substrates from a US-based supplier that enables the use of integrated die, surface mount processing and fine pitch, multi-die placements. The following paper details the processing and reliability capabilities of this substrate technology. A comprehensive characterization study was conducted to evaluate the processing of units containing ultra-small SMT devices, intermixed with fine pitch, flip chip die. The units were also processed with traditional BGA balling, making them compatible with level 2, PCB level processes. Data will be shown with the results of the assembly analysis and subsequent reliability assessment of these units, showing a robust performance with thermal shock, uHAST and MSL level testing. A full analysis of the substrates structure will also be shown. The paper will show this technology's possibilities as a next generation substrate alternative.

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Singh, Mandeep, Navpreet Kaur y Elisabetta Comini. "The role of self-assembled monolayers in electronic devices". Journal of Materials Chemistry C 8, n.º 12 (2020): 3938–55. http://dx.doi.org/10.1039/d0tc00388c.

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Today, the self-assembled monolayer (SAM) approach for surface functionalization is regarded as highly versatile and compelling, especially in the immobilization of biomolecules and fabrication of novel supramolecular architectures.

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Vesce, Luigi, Maurizio Stefanelli y Aldo Di Carlo. "Efficient and Stable Perovskite Large Area Cells by Low-Cost Fluorene-Xantene-Based Hole Transporting Layer". Energies 14, n.º 19 (24 de septiembre de 2021): 6081. http://dx.doi.org/10.3390/en14196081.

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Among the new generation photovoltaics, perovskite solar cell (PSC) technology reached top efficiencies in a few years. Currently, the main objective to further develop PSCs is related to the fabrication of stable devices with cost-effective materials and reliable fabrication processes to achieve a possible industrialization pathway. In the n-i-p device configuration, the hole transporting material (HTM) used most is the highly doped organic spiro-fluorene-based material (Spiro-OMeTAD). In addition to the high cost related to its complex synthesis, this material has different issues such as poor photo, thermal and moisture stability. Here, we test on small and large area PSCs a commercially available HTM (X55, Dyenamo) with a new core made by low-cost fluorene–xantene units. The one-pot synthesis of this compound reduces 30 times its cost with respect to Spiro-OMeTAD. The optoelectronic performances and properties are characterized through JV measurement, IPCE (incident photon to current efficiency), steady-state photoluminescence and ISOS stability test. SEM (scanning electron microscope) images reveal a uniform and pinhole free coverage of the X55 HTM surface, which reduces the charge recombination losses and improves the device performance relative to Spiro-OMeTAD from 16% to 17%. The ISOS-D-1 stability test on large area cells without any encapsulation reports an efficiency drop of about 15% after 1000 h compared to 30% for the reference case.

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29

Shim, Young Bo, Han Uk Bae, Jun Tae Park y Myung Yung Jeong. "Optimization of Single-Step UV Exposure for Fabrication of Integrated Optical Device by Imprinting". Science of Advanced Materials 12, n.º 4 (1 de abril de 2020): 600–604. http://dx.doi.org/10.1166/sam.2020.3673.

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In this paper, a single ultra-violet exposure for multi-height structure was used to fabricate an optical-fiberintegrated planar lightwave circuit (PLC) splitter using a thermal imprinting technique. The 1 × 8 tapered multimode PLC splitter was designed with a trench at a depth of 50 μm and a variable width ranging from 50 μm to 690 μm for the insertion of waveguide and fiber structures measuring 125 μm × 87.5 μm in order to minimize insertion loss. Photolithography with a Cr layer and bottom anti-reflection coating (BARC) was utilized to fabricate a multi-height photoresist structure, and the effect of the thick Cr layer and BARC on the geometry was investigated. Scanning electron microscopy of the fabricated structures showed that a Cr thickness of 50 nm and BARC provided the ideal geometry with a minimal undercut and sidewall roughness. Based on the characterization of the imprinted splitter, the average value and uniformity of optical loss between the channels were 10 dB and less than 0.42 dB, respectively.

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30

Chuang, Wei-Ching, Chun-Ying Lee, Tung-Lung Wu, Chi-Ting Ho, Yu-Yao Kang, Chun-Hsien Lee y Teen-Hang Meen. "Fabrication of Integrated Device Comprising Flexible Dye-sensitized Solar Cell and Graphene-doped Supercapacitor". Sensors and Materials 32, n.º 6 (10 de junio de 2020): 2077. http://dx.doi.org/10.18494/sam.2020.2802.

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31

Bourdon, Helene, Claire Fenouillet-Béranger, Claire Gallon, Philippe Coronel y Damien Lenoble. "Selective SiGe Etching Formed by Localized Ge Implantation on SOI". Solid State Phenomena 108-109 (diciembre de 2005): 439–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.439.

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The fully depleted SOI devices present lateral isolation issues due to the shallow trench isolation (STI) process. We propose in this paper to study a new fabrication process for integrating local isolation trenches. Germanium (Ge) implantation is used to create SiGe (Silicon-Germanium) layer on thin SOI (silicon on insulator) that can be selectively etched. The advantage is the capability of implantation to localize the SiGe area on this substrate and to avoid STI process issues. Aggressive dimensions and geometries are studied and resulting material transformation (crystallization and Ge diffusion) are apprehending via SEM (Secondary Electron Microscopy) or AFM (Atomic Force Spectroscopy) to understand the etching kinetics. After optimization, we demonstrate the capability of fabricating localized trenches on SOI without degrading the neighboring Si layer or consuming the thin BOX (buried oxide).

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32

Khattak, Noor Saeed, Mohammad Saleem Khan, Luqman Ali Shah, Muhammad Farooq, Abdullah Khan, Safeer Ahmad, Saeed Ullah Jan y Noor Rehman. "The Effect of Low Weight Percent Multiwalled Carbon Nanotubes on the Dielectric Properties of Non-Conducting Polymer/Ceramic Nanocomposites for Energy Storage Materials". Zeitschrift für Physikalische Chemie 234, n.º 1 (28 de enero de 2020): 11–26. http://dx.doi.org/10.1515/zpch-2019-1370.

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AbstractHere in this study timing saving, easy and cost effective methods has been applied for fabricating the dielectric energy storage materials. Ceramic nanoparticles (FLZC’s) have been successfully synthesized by Sol-Gel method and its nanocomposites with non-conducting polymers (PVP, PVA, PEG, PEO) and multiwalled carbon nanotubes (MWCNT’s) by one-pot blending technique. Energy dispersive x-ray diffraction (EDX), x-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transforms infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA/DTA), AC impedance analyzer and dielectric properties were determined for all the samples. Dielectric properties showed good agreement with that of energy storage substances for electronic device fabrication. High dielectric constant was achieved when 0.5 wt% MWCNT’s was added to FLZC’s/MWCNT’s/Polymer nanocomposites. The stability and performance of the nanocomposites were dependent on the type of polymer used. These preparation materials can be employed in functional materials, such as high charge-storage capacitors, electrostriction for artificial muscles and smart skins etc.

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33

Colby, R., J. Hulleman, S. Padalkar, J. C. Rochet y L. A. Stanciu. "Biotemplated Synthesis of Metallic Nanoparticle Chains on an α-Synuclein Fiber Scaffold". Journal of Nanoscience and Nanotechnology 8, n.º 2 (1 de febrero de 2008): 973–78. http://dx.doi.org/10.1166/jnn.2008.16343.

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Biomolecular templates provide an excellent potential tool for bottom-up device fabrication. Self-assembling α-synuclein protein fibrils, the formation of which has been linked to Parkinson's disease, have yet to be explored for potential device fabrication. In this paper, α-synuclein fibrils were used as a template for palladium (Pd), gold (Au) and copper (Cu) nanoparticle chains synthesis. Deposition over a range of conditions resulted in metal-coated fibers with reproducible average diameters between 50 and 200 nm. Active elemental palladium deposited on the protein fibrils is used as a catalyst for the electroless deposition of Au and Cu. Nanoparticle chains were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray energy dispersive spectrometry (XEDS), and electron energy loss spectrometry (EELS).

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34

Dehlinger, Dietrich, Benjamin Sullivan, Sadik Esener, Dalibor Hodko, Paul Swanson y Michael J. Heller. "Automated Combinatorial Process for Nanofabrication of Structures Using Bioderivatized Nanoparticles". JALA: Journal of the Association for Laboratory Automation 12, n.º 5 (octubre de 2007): 267–76. http://dx.doi.org/10.1016/j.jala.2007.05.006.

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A fully automated electronic microarray control system (Nanochip 400 System) was used to carry out a combinatorial process to determine optimal conditions for fabricating higher order three-dimensional nanoparticle structures. Structures with up to 40 layers of bioderivatized nanoparticles were fabricated on a 400-test site CMOS microarray using the automated Nanochip 400 System. Reconfigurable electric fields produced on the surface of the CMOS microarray device actively transport, concentrate, and promote binding of 40 nm biotin- and streptavidin-derivatized nanoparticles to selected test sites on the microarray surface. The overall fabrication process including nanoparticle reagent delivery to the microarray device, electronic control of the CMOS microarray and the optical/fluorescent detection, and monitoring of nanoparticle layering are entirely controlled by the Nanochip 400 System. The automated nanoparticle layering process takes about 2 minutes per layer, with 10–20 seconds required for the electronic addressing and binding of nanoparticles, and roughly 60 seconds for washing. The addressing and building process is monitored by changes in fluorescence intensity as each nanoparticle layer is deposited. The final multilayered 3D structures are about 2 μm in thickness and 55 μm in diameter. Multilayer nanoparticle structures and control sites on the microarray were verified by SEM analysis.

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35

Zhang, W. W., J. J. Zhu, Winco K. C. Yung y Simon S. Ang. "Fabrication of Biodegradable Polymeric Micro-Analytical Devices Using a Laser Direct Writing Method". Advanced Materials Research 136 (octubre de 2010): 53–58. http://dx.doi.org/10.4028/www.scientific.net/amr.136.53.

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Microfluidic channel and micro-cavities were fabricated from polyhydroxyalkanoate biodegradable polymer using a direct 20ns, 248 nm excimer laser writing method. First we give a design of the micro-analytical device; second we discussed the laser ablation of biodegradable ppolymer material. The morphology, dimensional accuracy, and surface conditions of the fabricated micro-devices were studied using atomic force microscopy, scanning electron microscopy, optical microscopy, and X-ray photoelectron spectroscopy. Melting of the biodegradable polymer was observed at a fluency of 50mJ/cm2 while ablation was observed at a fluency of 100mJ/cm2.The different width between bottom and top surface are studied in our research. The particle deposited on the polymer surface is seen from the SEM of 248nm laser ablation of PHA. However, the direct burning of PHA can be seen from the optical photo by 355nm laser. Compare to results of PHA with two different lasers, we can see that the 248nm laser is a suitable choice.

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36

Park, Tae Wan y Woon Ik Park. "Pattern Transfer Printing by Controlling the Deposition Angle to Form Various Patterns". Korean Journal of Metals and Materials 58, n.º 2 (5 de febrero de 2020): 145–50. http://dx.doi.org/10.3365/kjmm.2020.58.2.145.

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The nanofabrication of modern electronic devices requires advanced nanopatterning technologies. To fabricate desirable nanodevices with excellent device performance, controlling the shape and dimension of the pattern is very important. However, to achieve more facile and faster device fabrication, with better pattern resolution, pattern-tunability, process simplicity, and cost-effectiveness, some remaining challenges still need to be resolved. In this study, we introduce a simple and practical method to generate various patterns using a nanotransfer printing (nTP) process. To obtain functional materials with diverse shapes on a polymer replica pattern, in the nTP process we controlled the angle of deposition before transfer-printing. First, we obtained three different pattern shapes with a thickness of ~ 30 nm on polymethyl methacrylate (PMMA) replica patterns. Then, the deposited functional patterns on the PMMA patterns are successfully transfer-printed onto SiO<sub>2</sub>/Si substrates, showing line, L-shape line, and concavo-convex patterns. We observed the pattern shapes of the patterns by scanning electron microscope (SEM) and optical microscope. Moreover, we systemically analyzed how to form patterns of various shapes using one kind of master mold. We expect that this simple approach will be widely used to fabricate various useful patterns for electronic device applications.

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37

Lu, Xiwen, Jinhang Liu, Ye Ding, Lijun Yang, Zhan Yang y Yang Wang. "Simulation and fabrication of carbon nanotube–nanoparticle interconnected structures". Mechanical Sciences 12, n.º 1 (27 de abril de 2021): 451–59. http://dx.doi.org/10.5194/ms-12-451-2021.

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Abstract. With the rapid development of nanotechnology, the size of a device reaches sub-nanometer scale. The larger resistivity of interconnect leads to serious overheating of integrated circuits. Silicon-based electronic devices have also reached the physical limits of their development. The use of carbon nanotubes instead of traditional wires has become a new solution for connecting nano-structures. Nanocluster particles serving as brazing material play an important role in stabilizing the connection of carbon nanotubes, which places higher demands for nanoscale manipulation techniques. In this paper, the dynamic processes under different operating scenarios were simulated and analyzed, including probe propulsion nanoparticle operation, probe pickup nanoparticle operation and probe pickup nanocluster particle operation. Then, the SEM (Scanning Electron Microscope) was used for nanoparticle manipulation experiments. The smallest unit of carbon nanotube wire was obtained by three-dimensional (3D) construction of a carbon nanotube–silver nanocluster particle (CN-AgNP), which verified the feasibility of 3D manipulation of carbon nanotube wire construction. The experiments on the construction of carbon nanotube–nanocluster particle structures in three-dimensional operation were completed, and the smallest unit of carbon nanotube wire was constructed. This nano-fabrication technology will provide an efficient and mature technical means in the field of nano-interconnection.

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38

Tahir, Muhammad, Muhammad Ilyas, Fakhra Aziz, Mahidur R. Sarker, Muhammad Zeb, Mohd Adib Ibrahim y Ramizi Mohamed. "Fabrication and Microelectronic Properties of Hybrid Organic–Inorganic (poly(9,9, dioctylfluorene)/p-Si) Heterojunction for Electronic Applications". Applied Sciences 10, n.º 22 (10 de noviembre de 2020): 7974. http://dx.doi.org/10.3390/app10227974.

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We report on the microelectronic characteristics of a novel hybrid heterojunction device based on a solution processable semiconducting polymer poly(9,9-dioctylfluorenyl-2,7-diyl)- co-(N,N0-diphenyl)-N,N′di(p-butyl-oxy-pheyl)-1,4-diamino-benzene) (PFB) and p-type silicon (p-Si). The PFB/p-Si heterojunction is prepared by spin coating 20 mg/mL solution of PFB in chloroform on the precleaned polished surface of p-Si substrate. Thermal evaporation of silver (Ag) electrode on top of PFB completes the fabrication of the Ag (90 nm)/PFB (180 nm)/p-Si heterojunction device. Morphology of PFB thin film is studied by using an atomic force microscope (AFM) and scanning electron microscope (SEM), which reveals grains are randomly distributed with slightly different grain sizes and shapes. It leads the film to form nonuniformity and some roughness in its topography that results in limiting the current (I) flow across the film/interface with p-Si. Ultraviolet (UV–vis) absorption and X-ray diffraction (XRD) spectra are measured for optical bandgap and crystal structure analysis of PFB. The key microelectronic parameters—rectification ratio (RR), ideality factor (n), barrier height (Φb), series resistance (Rs) and reverse saturation current (I0)—of the Ag/PFB/p-Si heterojunction are found from current–voltage (I–V) characteristics at room temperature (300 K) in dark conditions (≈0 lux). The Ag/PFB/p-Si heterojunction device exhibits improved microelectronic parameters when compared to those of earlier reported devices that were prepared in the same configuration. This improvement in the device parameters reveals enhancement in the microelectronic properties across the interface/depletion region of the Ag/PFB/p-Si device, which can be attributed to the remarkable electronic properties of PFB such as its relatively high hole mobility and better charge carriers’ conduction. The charge transport mechanisms through the device is also studied. Having the smaller values of I0 ≈ 7 × 10−10 A and n ≈ 3.23, as well as higher shunt resistance (Rsh) of 32 GΩ for the Ag/PFB/p-Si device suggest its potential for many electronic and optoelectronic applications.

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39

Chen, Guang Xia y Kai Guang. "Research of Metallic Part Fabrication by Selective Laser Melting". Applied Mechanics and Materials 120 (octubre de 2011): 284–87. http://dx.doi.org/10.4028/www.scientific.net/amm.120.284.

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The primary goal of this research is the fabrication and measure of metal part made by SLM (selective laser melting) system. The SLM system is separated into two sections which are hard system and software system. The hard system is consisted of an Yb-fiber laser, an optical scanner, a powder coating device, a gas purification system and a CNC system; the software system is mainly consisted of CAD model display module, slicing and path layout module and processing control module. A removable partial denture framework was fabricated by this SLM system using stainless steel. A method of metal part precision with complex shape is that using reverse engineering and the average tolerance of metal part fabricated by SLM is ±0.172mm by using this method. The experimental results showed that SLM system developed by us can settle for the need of laser rapid prototyping in metal part fabrication.

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40

Shahkarami, M. M. Haji, J. Koohsorkhi y H. Ghafoori Fard. "Fabrication of High Sensitive UV Photodetector Based on n-ZnO Nanowire/n-Porous-Si Heterojunction". Nano 12, n.º 04 (abril de 2017): 1750044. http://dx.doi.org/10.1142/s1793292017500448.

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In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4[Formula: see text][Formula: see text]m and the diameter 150–200[Formula: see text]nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current–voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, [Formula: see text] and [Formula: see text] at UV radiation of 1.5[Formula: see text]mW/cm2 intensity at bias voltage of −0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.

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41

Drouin, D., P. Hovington, R. Gauvin y J. Beauvais. "Visualizing Sub-Micron Burried Metal Line in VLSI Devices using a SEM". Microscopy and Microanalysis 3, S2 (agosto de 1997): 499–500. http://dx.doi.org/10.1017/s1431927600009387.

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In recent years, the critical dimension in “Very Large Scale Integrated” devices has dramatically decreased. The microelectronics industry road map predicts that by the year 2000 the critical dimension will be below 250 nm. This reduction in scale will imply the development of new techniques to control the fabrication of such devices. This paper presents a novel approach to characterize VLSI devices based on Monte Carlo calculations. The principle of this technique is to use information from backscattered electrons (BE). The energies of those electrons are related to their maximum range within the structure. Thus it is possible to distinguish the layer from which they are backscattered. In order to collect this information an energy filtered backscattered electron detector must be used.Figure 1 shows a cross section of a structure produces using a typical VLSI process. The two metal layers are usually patterned to define small lines and contacts.

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42

Alam, Fahmida, Sadegh Mehdi Aghaei, Ahmed Hasnain Jalal y Nezih Pala. "Sonochemically Synthesized ZnO Nanostructured Piezoelectric Layers for Self-Powered Sensor Applications". MRS Advances 4, n.º 23 (2019): 1355–60. http://dx.doi.org/10.1557/adv.2019.88.

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ABSTRACTIn this paper, we report on the flexible thin film piezoelectric nanogenerators based on two-dimensional ZnO nanoflakes (NFs) directly deposited onto flexible polyethylene terephthalate (PET) using a simple sonochemical reaction in aqueous solution at room temperature. Our sonochemical synthesis method is a rapid, highly stable, low-cost, and reproducible method, which can be performed at ambient conditions. These advantages of the sonochemical method allow the synthesis of many different ZnO nanostructures. The structural investigations using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) indicated that the ZnO NFs grew with high level of crystallinity and without any thermal damage on the substrates. The fabrication of these device provides a promising solution for developing flexible and self-powered electronic devices particularly wearable and implantable sensors. This ZnO-NFs based nanogenerator provides 62 mV of potential and significant reproducibility having with lower p-value (0.0212).

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43

Yegnasubramanian, S., V. C. Kannan, R. Dutto y P. J. Sakach. "Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs". Proceedings, annual meeting, Electron Microscopy Society of America 47 (6 de agosto de 1989): 450–51. http://dx.doi.org/10.1017/s0424820100154226.

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Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

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44

Fujiwara, Rei, Hiroyuki Sano, Seiichiro Harada, Mikio Shimizu, Hiromichi Takebe y Makoto Kuwabara. "Fabrication of Electroluminescent Devices Using Nanocrystalline Oxide Phosphors". Key Engineering Materials 388 (septiembre de 2008): 123–26. http://dx.doi.org/10.4028/www.scientific.net/kem.388.123.

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Nanosized Y2O3:Eu3+ crystalline powders with average particle sizes around 100 nm, measured by field-emission scanning electron microscopy (FE-SEM), have been synthesized by a polymerized precursor method using carboxymethyl cellulose (CMC). The nanocrystalline phosphors exhibit intense photoluminescence (PL) and cathodoluminescence (CL) around 612 nm, being attributed to the 5D0-7F2 transition of Eu3+. Electroluminescence (EL) properties of the nanophosphors in the form of thick films were investigated, and emission of red light with maximum intensity at 612 nm (corresponding to x = 0.57 and y = 0.32 in the CIE chromaticity diagram) was observed under high ac field at 1 kHz. The obtained results suggest a possibility that Y2O3:Eu3+ nanopowders can be used as a red-emitting phosphor for EL devices.

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45

Saha, Biswajit y Jung Hoon Lee. "Improvement of Surface Properties of Micro-Mold via SAM Coating for Fabrication of Microfluidic Device". Applied Mechanics and Materials 752-753 (abril de 2015): 159–62. http://dx.doi.org/10.4028/www.scientific.net/amm.752-753.159.

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N-octadecyltrichlorosilane [OTS, CH3(CH2)17SiCl3] self-assembled monolayer (SAM) coatings were deposited on Si micromolds by dip-coating. Chemical composition, surface roughness, friction coefficient, thermal stability and surface energy of coatings were investigated. OTS coated silicon (Si) micromolds were used to fabricate PMMA microfluidic devices by hot-embossed process. All OTS coatings were thermally stable up to 180 °C, which is higher than hot-embossing temperature of PMMA. OTS coated micromolds had low friction coefficient, adhesion and superior molding efficiency, which improved lifetime of a uncoated Si micromold from 3 to 27 times.

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46

Kim, Pan Kyeom, Sung-Il Chung, Tae-Gyu Ha y Myung Yung Jeong. "The Fabrication of a Cylindrical Nano Mold Based on UV Photolithography". Science of Advanced Materials 12, n.º 3 (1 de marzo de 2020): 407–11. http://dx.doi.org/10.1166/sam.2020.3652.

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The field of nanotechnology is predicted to lead to breakthroughs in many industrial fields. However, inadequate capability for mass production is a large hurdle in the advancement of this industry. To overcome the shortfall in production of nanotechnological devices, we designed a cylindrical nano mold used in the roll-to-roll process with a large surface area to improve production efficiency. The nano structure was fabricated using the UV-based phase shift edge lithography process and duplicated onto a metal plate. The nano patterned metal plate was rolled onto a cylindrical core to complete the cylindrical nano mold. We confirmed the processing ability of the mold by experimentally conducting the nano imprinting process and analyzing the results.

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47

Buasri, Achanai, Suparak Ojchariyakul, Patinya Kaewmanechai, Waratchaya Eakviriyapichat y Vorrada Loryuenyong. "The Fabrication of Multicolor Electrochromic Device Based on RGO/BOPP Using Ag Nanoparticles". Materials Science Forum 926 (julio de 2018): 79–84. http://dx.doi.org/10.4028/www.scientific.net/msf.926.79.

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In this research, we focused on silver (Ag) nanoparticles that exhibit various colors on the basis of their localized surface plasmon resonance (LSPR). The effects of step-voltage parameters on the coloration of the Ag deposition-based electrochromic device were investigated. Further, we report the use of reduced graphene oxide (RGO)/biaxially oriented polypropylene (BOPP) as the transparent conductive electrode. RGO was synthesized directly from graphite under a microwave heating system. BOPP film was coated with RGO by drop-casting method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), energy dispersive spectroscopy (EDS), electrical resistance measurements and cyclic voltammetry (CV). The SEM and TEM images exist as typical wrinkled structure, folded region, transparent, indicating these layers are exfoliated to a very large extent. Our results primarily indicate that the novel BOPP/RGO/Ag/RGO/BOPP configuration presents an easy and expeditious way of preparing the voltage-tunable multicolor electrochromic device. The electrochromic device can be switched from the transparent state to the black state and yellow state.

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48

Yang, Xiaojiao, Jun Li y Ying Liu. "Fabrication and In-Situ Thermal Reduction of Gold Nanofibers". Science of Advanced Materials 12, n.º 8 (1 de agosto de 2020): 1109–15. http://dx.doi.org/10.1166/sam.2020.3760.

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One-dimensional gold nanofibers are good candidates for next generation nanoelectronic devices. Here, gold nanofibers were synthesized via electrospinning with subsequent in-situ thermal reduction. The thermal behavior of the precursor nanofibers was investigated by thermogravimetric/differential thermal analysis and fourier transform infrared. The polymer parts are decomposed and removed step by step, meanwhile, gold salt is decomposed and in-situ reduced to form gold nanoparticles in air without any reducing agent or gas due to its strong oxidation ability. The effects of gold content, polymers type (PVP, PVA, PAN), calcination atmospheres (Air, H2, H2/Ar) and temperatures (200 °C to 500 °C) on the morphology and structures of gold nanofibers were characterized by XRD, SEM, and TEM. The results shows that PVP is the optimal polymer with the gold content of 6:1 (PVP:Au) to fabricate the continuous gold nanofibers with good morphology and structures. The final gold nanofibers with average diameter of 60 nm and several hundred micrometers long, were fabricated after calcined at 500 °C in air for 2 hours. It was composed of gold nanoparticles that ranged from 5 to 30 nm.

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49

Takeda, Yasunori, Tomohito Sekine, Rei Shiwaku, Tomohide Murase, Hiroyuki Matsui, Daisuke Kumaki y Shizuo Tokito. "Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor". Applied Sciences 8, n.º 8 (9 de agosto de 2018): 1331. http://dx.doi.org/10.3390/app8081331.

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The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by the printing method have problems regarding driving voltage and performance. Studies on fabrication processes of electronic circuits for printing technology, including optimization and simplification, are also important research topics. In this study, the fabrication process of the printed complementary integrated circuit was simplified by applying a p-type donor-acceptor (D-A) polymer semiconductor, which is not strongly affected by the electrode work function. An inverter circuit and the ring oscillator circuit were demonstrated using this process. The fabricated ring oscillator array showed excellent performance, with low voltage operation and low performance variation.

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50

Yang, Zheng-Chun, Wen-Liang Zhao, Jian-Yun Wang, Ran Chen, Xuan Li, Tao Xue, Kai-Liang Zhang y Jin-Shi Zhao. "Fabrication of Nickel/Multi-Layer Graphene/Manganese Dioxide Hybrid Film as Enhanced Micro-Supercapacitor Devices". Science of Advanced Materials 10, n.º 2 (1 de febrero de 2018): 215–19. http://dx.doi.org/10.1166/sam.2018.2954.

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