Artículos de revistas sobre el tema "SiNx film"
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Lin, G. P., Po Cheng Kuo, P. L. Lin, Y. H. Fang y K. T. Huang. "Magnetic Properties of TbCo/(SiNx/Co)n Films". Advanced Materials Research 47-50 (junio de 2008): 785–88. http://dx.doi.org/10.4028/www.scientific.net/amr.47-50.785.
Texto completoDore, Jonathon, Rhett Evans, Bonne D. Eggleston, Sergey Varlamov y Martin A. Green. "Intermediate Layers for Thin-Film Polycrystalline Silicon Solar Cells on Glass Formed by Diode Laser Crystallization". MRS Proceedings 1426 (2012): 63–68. http://dx.doi.org/10.1557/opl.2012.866.
Texto completoSaladukhin, Ihar, Gregory Abadias, Vladimir Uglov, Sergey Zlotski, Arno Janse van Vuuren y Jacques Herman O’Connell. "Structural Properties and Oxidation Resistance of ZrN/SiNx, CrN/SiNx and AlN/SiNx Multilayered Films Deposited by Magnetron Sputtering Technique". Coatings 10, n.º 2 (7 de febrero de 2020): 149. http://dx.doi.org/10.3390/coatings10020149.
Texto completoShu, Jonathan B., Susan B. Clyburn, Thomas E. Mates y Shefford P. Baker. "Effect of oxygen on the thermomechanical behavior of passivated Cu thin films". Journal of Materials Research 18, n.º 9 (septiembre de 2003): 2122–34. http://dx.doi.org/10.1557/jmr.2003.0298.
Texto completoZhang, Chi, Majiaqi Wu, Pengchang Wang, Maoliang Jian, Jianhua Zhang y Lianqiao Yang. "Stability of SiNx Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature". Nanomaterials 11, n.º 12 (11 de diciembre de 2021): 3363. http://dx.doi.org/10.3390/nano11123363.
Texto completoEnisherlova, Kira L., Lev A. Seidman, Ella M. Temper y Yuliy A. Kontsevoy. "Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures". Modern Electronic Materials 7, n.º 2 (30 de junio de 2021): 63–71. http://dx.doi.org/10.3897/j.moem.7.2.73293.
Texto completoZhang, Sam, Deen Sun y Xianting Zeng. "Oxidation of Ni-toughened nc-TiN/a-SiNx nanocomposite thin films". Journal of Materials Research 20, n.º 10 (octubre de 2005): 2754–62. http://dx.doi.org/10.1557/jmr.2005.0357.
Texto completoYong, Sang Heon, Hyung June Ahn, Sun Jung Kim, Jang Soon Park, Sungyool Kwon, Sung Min Cho, Donggeun Jung y Heeyeop Chae. "Room Temperature Deposition of SiNx and Plasma Polymer Layers for Flexible Multilayer Barrier Films by Plasma Enhanced Chemical Vapor Deposition Processes". Nano 13, n.º 07 (julio de 2018): 1850082. http://dx.doi.org/10.1142/s1793292018500820.
Texto completoHegedüs, Nikolett, Riku Lovics, Miklós Serényi, Zsolt Zolnai, Péter Petrik, Judit Mihály, Zsolt Fogarassy, Csaba Balázsi y Katalin Balázsi. "Examination of the Hydrogen Incorporation into Radio Frequency-Sputtered Hydrogenated SiNx Thin Films". Coatings 11, n.º 1 (6 de enero de 2021): 54. http://dx.doi.org/10.3390/coatings11010054.
Texto completoDang, Nhat, Zhao-Ying Wang, Ti-Yuan Wu, Tra Nguyen y Ming-Tzer Lin. "Measurement of Effects of Different Substrates on the Mechanical Properties of Submicron Titanium Nickel Shape Memory Alloy Thin Film Using the Bulge Test". Micromachines 12, n.º 1 (15 de enero de 2021): 85. http://dx.doi.org/10.3390/mi12010085.
Texto completoMa, Hong-Ping, Hong-Liang Lu, Jia-He Yang, Xiao-Xi Li, Tao Wang, Wei Huang, Guang-Jie Yuan, Fadei Komarov y David Zhang. "Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer Deposition". Nanomaterials 8, n.º 12 (5 de diciembre de 2018): 1008. http://dx.doi.org/10.3390/nano8121008.
Texto completoKoybasi, Ozhan, Ørnulf Nordseth, Trinh Tran, Marco Povoli, Mauro Rajteri, Carlo Pepe, Eivind Bardalen et al. "High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx". Sensors 21, n.º 23 (24 de noviembre de 2021): 7807. http://dx.doi.org/10.3390/s21237807.
Texto completoDuan, Chun Yan, Xiao Xia Zhao, Chang Ji Hu, Dong Liang Lu y Hui Shen. "Preparation of Ag Nanoparticles Arrays for Silicon Solar Cells". Advanced Materials Research 805-806 (septiembre de 2013): 136–42. http://dx.doi.org/10.4028/www.scientific.net/amr.805-806.136.
Texto completoSeydman, L. A., Yu A. Kontsevoy, K. L. Enisherlova y S. V. Minnebaev. "PECVD OBTAINED SiNx FILMS FOR THE PASSIVATION OF AlGaN/GaN HEM". Electronic engineering Series 2 Semiconductor devices 258, n.º 3 (2020): 22–33. http://dx.doi.org/10.36845/2073-8250-2020-258-3-22-33.
Texto completoChang, Yu-Chen, Ying-Chung Chen, Bing-Rui Li, Wei-Che Shih, Jyun-Min Lin, Wei-Tsai Chang y Chien-Chuan Cheng. "Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices". Coatings 11, n.º 4 (30 de marzo de 2021): 397. http://dx.doi.org/10.3390/coatings11040397.
Texto completoDedkova A. A., Glagolev P. Y., Gusev E. E., Djuzhev N. A., Kireev V. Y., Lychev S. A. y Tovarnov D. A. "Peculiarities of deformation of round thin-film membranes and experimental determination of their effective characteristics". Technical Physics 92, n.º 13 (2022): 2033. http://dx.doi.org/10.21883/tp.2022.13.52218.121-21.
Texto completoChen, Chao Nan, Jung Jie Huang, Gwo Mei Wu y How Wen Chien. "Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication". Applied Mechanics and Materials 284-287 (enero de 2013): 225–29. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.225.
Texto completoFuji, Yusuke, Shiro Shimada y Hajime Kiyono. "Preparation and Wear Resistance of TiBC, TiBN, SiNX Single Layer Film and TiBC-SiNX and TiBN-SiNX Double Layer Film by Thermal Plasma CVD". Journal of the Japan Society of Powder and Powder Metallurgy 54, n.º 4 (2007): 287–93. http://dx.doi.org/10.2497/jjspm.54.287.
Texto completoJung, Sungwook, I. O. Parm, Kyung Soo Jang, Dae-Ho Park, Byeong-Hyeok Sohn, Jin Chul Jung, Wang Cheol Zin, Suk-Ho Choi, S. K. Dhungel y J. Yi. "Fabrication of Nanostructure and Formation of Nanocrystal for Non-Volatile Memory". Journal of Nanoscience and Nanotechnology 6, n.º 11 (1 de noviembre de 2006): 3652–56. http://dx.doi.org/10.1166/jnn.2006.075.
Texto completoTikana, L., M. Pohl, A. Zösch, W. Zahn y W. Wuttke. "SiNx-Submicrometer Coatings: Optimization of Film Properties". Advanced Engineering Materials 2, n.º 1-2 (febrero de 2000): 53–56. http://dx.doi.org/10.1002/(sici)1527-2648(200002)2:1/2<53::aid-adem53>3.0.co;2-f.
Texto completoMa, Xiang Yang, Li Ming Fu y De Ren Yang. "Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films". Solid State Phenomena 178-179 (agosto de 2011): 249–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.249.
Texto completoChen, Bitao, Yingke Zhang, Qiuping Ouyang, Fei Chen, Xinghua Zhan y Wei Gao. "The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells". International Journal of Modern Physics B 31, n.º 16-19 (26 de julio de 2017): 1744101. http://dx.doi.org/10.1142/s021797921744101x.
Texto completoWi, Seong Ju, Yong Ju Jang, Dong Gi Lee, Seon Yong Kim y Jinho Ahn. "Investigating the Degradation of EUV Transmittance of an EUV Pellicle Membrane". Membranes 13, n.º 1 (21 de diciembre de 2022): 5. http://dx.doi.org/10.3390/membranes13010005.
Texto completoSeo, Jong Hyun, Jae Hong Jeon y Hee Hwan Choe. "Prevention of Thin Film Failures for PECVD Amorphous-Si on Plastic Substrate". Solid State Phenomena 124-126 (junio de 2007): 387–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.387.
Texto completoKang, Myoung-Jin, Hyun-Seop Kim, Ho-Young Cha y Kwang-Seok Seo. "Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs". Crystals 10, n.º 9 (21 de septiembre de 2020): 842. http://dx.doi.org/10.3390/cryst10090842.
Texto completoKOBAYASHI, Takahiro, Naoto MATSUO, Akira HEYA y Shin YOKOYAMA. "Improvement of Hump Phenomenon of Thin-Film Transistor by SiNX Film". IEICE Transactions on Electronics E97.C, n.º 11 (2014): 1112–16. http://dx.doi.org/10.1587/transele.e97.c.1112.
Texto completoDedkova A.A. y Djuzhev N.A. "Investigation of the real shape changes of round thin-film membranes during the bulge testing". Technical Physics 92, n.º 8 (2022): 1067. http://dx.doi.org/10.21883/tp.2022.08.54575.86-22.
Texto completoLee, Sang Hyuk, Bo Hyun Seo y Jong Hyun Seo. "Micro-Scratch Analysis on Adhesion between Thin Films and PES Substrate". Advanced Materials Research 26-28 (octubre de 2007): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1153.
Texto completoBulkin, Pavel, Patrick Chapon, Dmitri Daineka, Guili Zhao y Nataliya Kundikova. "PECVD SiNx Thin Films for Protecting Highly Reflective Silver Mirrors: Are They Better Than ALD AlOx Films?" Coatings 11, n.º 7 (26 de junio de 2021): 771. http://dx.doi.org/10.3390/coatings11070771.
Texto completoChen, Rongsheng, Wei Zhou, Meng Zhang y Hoi-Sing Kwok. "Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers". Thin Solid Films 564 (agosto de 2014): 397–400. http://dx.doi.org/10.1016/j.tsf.2014.05.061.
Texto completoBunnak, Phuwanai, Yong Ping Gong, Supanee Limsuwan, Artorn Pokaipisit y Pichet Limsuwan. "XPS and Spectroscopic Ellipsometry Study of Composite SiNx/DLC Prepared by Co-Deposition of RF Magnetron and Filtered Cathodic Arc". Advanced Materials Research 712-715 (junio de 2013): 601–5. http://dx.doi.org/10.4028/www.scientific.net/amr.712-715.601.
Texto completoCho, Haewon, Namgue Lee, Hyeongsu Choi, Hyunwoo Park, Chanwon Jung, Seokhwi Song, Hyunwoo Yuk et al. "Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma". Applied Sciences 9, n.º 17 (28 de agosto de 2019): 3531. http://dx.doi.org/10.3390/app9173531.
Texto completoKouakou, P., P. Yoboue, B. Ouattara, V. Hody, P. Choquet y M. Belmahi. "Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation". Journal of Surface Science and Technology 33, n.º 1-2 (24 de julio de 2017): 44. http://dx.doi.org/10.18311/jsst/2017/11022.
Texto completoChernenko, Volodymyr A., Ricardo López Antón, Stefano Besseghini, José M. Barandiarán, Makoto Ohtsuka, Andrea Gambardella y Peter Müllner. "Magnetization and Domain Patterns in Martensitic NiMnGa Films on Si(100) Wafer". Advanced Materials Research 52 (junio de 2008): 35–43. http://dx.doi.org/10.4028/www.scientific.net/amr.52.35.
Texto completoKang, Unbyoung, Taegon Lee y Young-Ho Kim. "Pt/Ti Thin Film Adhesion on SiNx/Si Substrates". Japanese Journal of Applied Physics 38, Part 1, No. 7A (15 de julio de 1999): 4147–51. http://dx.doi.org/10.1143/jjap.38.4147.
Texto completoShang, Zheng Guo, Dong Ling Li y Zhi Yu Wen. "Fabrication of Low Stress PECVD-SiNx Film in High Frequency Mode". Key Engineering Materials 562-565 (julio de 2013): 22–27. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.22.
Texto completoZhang, S. y D. E. Brodie. "The effect of H on a-SiNx prepared by ion-beam-assisted reaction deposition". Canadian Journal of Physics 71, n.º 9-10 (1 de septiembre de 1993): 448–54. http://dx.doi.org/10.1139/p93-070.
Texto completoLiu, Yiming, Chang Liu, Houyun Qin, Chong Peng, Mingxin Lu, Zhanguo Chen y Yi Zhao. "Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric". Membranes 11, n.º 11 (22 de noviembre de 2021): 902. http://dx.doi.org/10.3390/membranes11110902.
Texto completoShi, Ji Feng, Long Long Chen y Xiang Sun. "Effect of Annealing and Gate Insulator Material Changing on the Performances of IGZO-TFT". Applied Mechanics and Materials 670-671 (octubre de 2014): 1467–70. http://dx.doi.org/10.4028/www.scientific.net/amm.670-671.1467.
Texto completoXu, Jun, Tianmin Shao y Rong Zhu. "Study of SiNx films used as protective layer on Ni film flow sensors". Surface and Coatings Technology 253 (agosto de 2014): 38–43. http://dx.doi.org/10.1016/j.surfcoat.2014.05.011.
Texto completoArzhannikova, Sofia A., M. D. Efremov, Vladimir A. Volodin, G. N. Kamaev, D. V. Marin, S. A. Soldatenkov, V. S. Shevchuk, S. A. Kochubei, A. A. Popov y Yu A. Minakov. "Laser Assisted Formation on Nanocrystals in Plasma-Chemical Deposited SiNx Films". Solid State Phenomena 108-109 (diciembre de 2005): 53–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.53.
Texto completoHwang, Soo Jung, Junichi Koike y Young Chang Joo. "Evolution of Stress-Induced Surface Damage and Stress-Relaxation of Electroplated Cu Films at Elevated Temperatures". Materials Science Forum 475-479 (enero de 2005): 3641–46. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3641.
Texto completoMuraishi, Shinji y Tatsuhiko Aizawa. "Phase Separation into Nano-Crystalline Nitrides in Ternary Ti-Si-N System via N Implantation". Materials Science Forum 475-479 (enero de 2005): 3651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3651.
Texto completoGruber, Patric A., Sven Olliges, Eduard Arzt y Ralph Spolenak. "Temperature dependence of mechanical properties in ultrathin Au films with and without passivation". Journal of Materials Research 23, n.º 9 (septiembre de 2008): 2406–19. http://dx.doi.org/10.1557/jmr.2008.0292.
Texto completoWang, Ruozheng, Qiang Wei, Jie Li, Jiao Fu, Yiwei Liu, Tianfei Zhu, Cui Yu, Gang Niu, Shengli Wu y Hongxing Wang. "Effect of HfO2-Based Multi-Dielectrics on Electrical Properties of Amorphous In-Ga-Zn-O Thin Film Transistors". Coatings 11, n.º 11 (11 de noviembre de 2021): 1381. http://dx.doi.org/10.3390/coatings11111381.
Texto completoSong, Chao, Yan Qing Guo, Xiang Wang, Jie Song y Rui Huang. "Microstructures and Photoluminescence of a-Si:H/a-SiNx Multilayers Annealed at Different Temperature". Key Engineering Materials 531-532 (diciembre de 2012): 465–68. http://dx.doi.org/10.4028/www.scientific.net/kem.531-532.465.
Texto completoIzumi, A. y H. Matsumura. "Properties of Catalytic CVD SiNx For Antireflection Coatings". MRS Proceedings 555 (1998). http://dx.doi.org/10.1557/proc-555-161.
Texto completoMinamikawa, Toshiharu, Yasuto Yonezawa, Yoshikazu Fujimori, Takashi Nakamura, Atsushi Masuda y Hideki Matsumura. "200 °C Preparation of SiNx Passivation Films for PZT Ferroelectric Capacitors by Catalytic CVD". MRS Proceedings 655 (2000). http://dx.doi.org/10.1557/proc-655-cc2.10.1.
Texto completoKattamis, Alex Z., Kunigunde H. Cherenack, I.-Chun Cheng, Ke Long, James C. Sturm y Sigurd Wagner. "Fracture Mechanisms of SiNx Thin-films on Compliant Substrates". MRS Proceedings 1078 (2008). http://dx.doi.org/10.1557/proc-1078-m14-02.
Texto completoKambayashi, Hiroshi, Takahiro Wada, Nariaki Ikeda y Seikoh Yoshida. "Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current". MRS Proceedings 892 (2005). http://dx.doi.org/10.1557/proc-0892-ff05-03.
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