Bibliografías temáticas / Single-Electron physics / Artículos de revistas

Artículos de revistas sobre el tema "Single-Electron physics"

Siga este enlace para ver otros tipos de publicaciones sobre el tema: Single-Electron physics.
Autor: Grafiati
Publicado: 22 de junio de 2024

Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros

Elija tipo de fuente:

Consulte los 50 mejores artículos de revistas para su investigación sobre el tema "Single-Electron physics".

Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.

También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.

Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.

1

Osborne, I. S. "APPLIED PHYSICS: Single-Electron Shuttle". Science 293, n.º 5535 (31 de agosto de 2001): 1559b—1559. http://dx.doi.org/10.1126/science.293.5535.1559b.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
2

KASTNER, M. A. "THE PHYSICS OF SINGLE ELECTRON TRANSISTORS". International Journal of High Speed Electronics and Systems 12, n.º 04 (diciembre de 2002): 1101–33. http://dx.doi.org/10.1142/s0129156402001940.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Resumen
The single electron transistor (SET) is a nanometer-size device that turns on and off again every time one electron is added to it. In this article, the physics of the SET is reviewed. The consequences of confining electrons to a small region of space are that both the charge and energy are quantized. We review how the charge states and energy states of the confined electrons, sometimes called an artificial atom, are measured, and how the precision of these measurements depends on temperature. We also discuss the coupling of electrons inside the artificial atom to those in the leads of the SET, which results in the Kondo effect. We review measurements of the Kondo effect, which demonstrate that the Anderson Hamiltonian provides a quantitative description of the SET.
3

Kastner, M. A. y D. Goldhaber-Gordon. "Kondo physics with single electron transistors". Solid State Communications 119, n.º 4-5 (julio de 2001): 245–52. http://dx.doi.org/10.1016/s0038-1098(01)00106-5.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
4

Kobayashi, Shun-ichi. "Fundamental Physics of Single Electron Transport". Japanese Journal of Applied Physics 36, Part 1, No. 6B (30 de junio de 1997): 3956–59. http://dx.doi.org/10.1143/jjap.36.3956.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
5

Dempsey, Kari J., David Ciudad y Christopher H. Marrows. "Single electron spintronics". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, n.º 1948 (13 de agosto de 2011): 3150–74. http://dx.doi.org/10.1098/rsta.2011.0105.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Resumen
Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes with a non-magnetic island can lead to spin accumulation on the island. On the other hand, making the dot also ferromagnetic introduces new physics such as tunnelling magnetoresistance enhancement in the cotunnelling regime and manifestations of the Kondo effect. Such nanoscale islands are also found to have long spin lifetimes. Conventional spintronics makes use of the average spin-polarization of a large ensemble of electrons: this new approach offers the prospect of accessing the quantum properties of the electron, and is a candidate approach to the construction of solid-state spin-based qubits.
6

Seneor, Pierre, Anne Bernand-Mantel y Frédéric Petroff. "Nanospintronics: when spintronics meets single electron physics". Journal of Physics: Condensed Matter 19, n.º 16 (5 de abril de 2007): 165222. http://dx.doi.org/10.1088/0953-8984/19/16/165222.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
7

Devoret, Michel H. y Christian Glattli. "Single-electron transistors". Physics World 11, n.º 9 (septiembre de 1998): 29–34. http://dx.doi.org/10.1088/2058-7058/11/9/26.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
8

Jamshidnezhad, K. y M. J. Sharifi. "Physics-based analytical model for ferromagnetic single electron transistor". Journal of Applied Physics 121, n.º 11 (21 de marzo de 2017): 113905. http://dx.doi.org/10.1063/1.4978425.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
9

Seike, Kohei, Yasushi Kanai, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue y Kazuhiko Matsumoto. "Carbon nanotube single-electron transistors with single-electron charge storages". Japanese Journal of Applied Physics 54, n.º 6S1 (24 de abril de 2015): 06FF05. http://dx.doi.org/10.7567/jjap.54.06ff05.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
10

Wu Fan y Wang Tai-Hong. "Single-electron control by single-electron pump and its stability diagrams". Acta Physica Sinica 52, n.º 3 (2003): 696. http://dx.doi.org/10.7498/aps.52.696.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
11

Ginzburg, L. P. "Single-electron Schrödinger equation for many-electron systems". Theoretical and Mathematical Physics 121, n.º 3 (diciembre de 1999): 1641–53. http://dx.doi.org/10.1007/bf02557209.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
12

Apell, P. y A. Tagliacozzo. "Single Electron Tunneling". physica status solidi (b) 145, n.º 2 (1 de febrero de 1988): 483–91. http://dx.doi.org/10.1002/pssb.2221450213.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
13

Gurvitz, Shmuel. "Single-electron approach for time-dependent electron transport". Physica Scripta T165 (1 de octubre de 2015): 014013. http://dx.doi.org/10.1088/0031-8949/2015/t165/014013.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
14

Nagase, Masao, Seiji Horiguchi, Akira Fujiwara y Yasuo Takahashi. "Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors". Japanese Journal of Applied Physics 42, Part 1, No. 4B (30 de abril de 2003): 2438–43. http://dx.doi.org/10.1143/jjap.42.2438.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
15

Monreal, Benjamin. "Single-electron cyclotron radiation". Physics Today 69, n.º 1 (enero de 2016): 70–71. http://dx.doi.org/10.1063/pt.3.3060.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
16

Ji, Xiao-Fan, Zheng Xu, Shuo Cao, Kang-Sheng Qiu, Jing Tang, Xi-Tian Zhang y Xiu-Lai Xu. "Single-ZnO-Nanobelt-Based Single-Electron Transistors". Chinese Physics Letters 31, n.º 6 (junio de 2014): 067303. http://dx.doi.org/10.1088/0256-307x/31/6/067303.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
17

Yano, Kazuo y David K. Ferry. "Single-electron solitons". Superlattices and Microstructures 11, n.º 1 (enero de 1992): 61–64. http://dx.doi.org/10.1016/0749-6036(92)90362-9.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
18

AKAMINE, Yuta, Kazuto FUJIWARA, Bokulae CHO y Chuhei OSHIMA. "New Phenomena in Physics Related with Single-Atom Electron Sources". Journal of the Vacuum Society of Japan 55, n.º 2 (2012): 59–63. http://dx.doi.org/10.3131/jvsj2.55.59.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
19

Wingreen, N. S. "PHYSICS: Quantum Many-Body Effects in a Single-Electron Transistor". Science 304, n.º 5675 (28 de mayo de 2004): 1258–59. http://dx.doi.org/10.1126/science.1098302.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
20

Nordlander, Peter, Ned S. Wingreen, Yigal Meir y David C. Langreth. "Kondo physics in the single-electron transistor with ac driving". Physical Review B 61, n.º 3 (15 de enero de 2000): 2146–50. http://dx.doi.org/10.1103/physrevb.61.2146.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
21

Tanttu, Tuomo, Alessandro Rossi, Kuan Yen Tan, Kukka-Emilia Huhtinen, Kok Wai Chan, Mikko Möttönen y Andrew S. Dzurak. "Electron counting in a silicon single-electron pump". New Journal of Physics 17, n.º 10 (16 de octubre de 2015): 103030. http://dx.doi.org/10.1088/1367-2630/17/10/103030.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
22

Kauppinen, J. P. y J. P. Pekola. "Hot electron effects in metallic single electron components". Czechoslovak Journal of Physics 46, S4 (abril de 1996): 2295–96. http://dx.doi.org/10.1007/bf02571139.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
23

Takahashi, Yasuo, Yukinori Ono, Akira Fujiwara y Hiroshi Inokawa. "Silicon single-electron devices". Journal of Physics: Condensed Matter 14, n.º 39 (20 de septiembre de 2002): R995—R1033. http://dx.doi.org/10.1088/0953-8984/14/39/201.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
24

Kim, Sang Jin, Yukinori Ono, Yasuo Takahashi y Jung Bum Choi. "Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor". Japanese Journal of Applied Physics 43, n.º 10 (8 de octubre de 2004): 6863–67. http://dx.doi.org/10.1143/jjap.43.6863.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
25

Boese, D. y H. Schoeller. "Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor". Europhysics Letters (EPL) 54, n.º 5 (junio de 2001): 668–74. http://dx.doi.org/10.1209/epl/i2001-00367-8.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
26

Sui Bing-Cai, Fang Liang y Zhang Chao. "Conductance of single-electron transistor with single island". Acta Physica Sinica 60, n.º 7 (2011): 077302. http://dx.doi.org/10.7498/aps.60.077302.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
27

Wang, Y., D. MacKernan, D. Cubero, D. F. Coker y N. Quirke. "Single electron states in polyethylene". Journal of Chemical Physics 140, n.º 15 (21 de abril de 2014): 154902. http://dx.doi.org/10.1063/1.4869831.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
28

Matsutani, Masahiro, Fujio Wakaya, Sadao Takaoka, Kazuo Murase y Kenji Gamo. "Electron-Beam-Induced Oxidation for Single-Electron Devices". Japanese Journal of Applied Physics 36, Part 1, No. 12B (30 de diciembre de 1997): 7782–85. http://dx.doi.org/10.1143/jjap.36.7782.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
29

Nishiguchi, Norihiko. "Electron transport properties of C60 single electron transistor". Physica E: Low-dimensional Systems and Nanostructures 18, n.º 1-3 (mayo de 2003): 247–48. http://dx.doi.org/10.1016/s1386-9477(02)01000-7.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
30

Ciccarello, F., G. M. Palma, M. Zarcone, Y. Omar y V. R. Vieira. "Entanglement controlled single-electron transmittivity". New Journal of Physics 8, n.º 9 (27 de septiembre de 2006): 214. http://dx.doi.org/10.1088/1367-2630/8/9/214.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
31

Dasenbrook, David, Joseph Bowles, Jonatan Bohr Brask, Patrick P. Hofer, Christian Flindt y Nicolas Brunner. "Single-electron entanglement and nonlocality". New Journal of Physics 18, n.º 4 (26 de abril de 2016): 043036. http://dx.doi.org/10.1088/1367-2630/18/4/043036.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
32

Bushev, P. A., J. H. Cole, D. Sholokhov, N. Kukharchyk y M. Zych. "Single electron relativistic clock interferometer". New Journal of Physics 18, n.º 9 (27 de septiembre de 2016): 093050. http://dx.doi.org/10.1088/1367-2630/18/9/093050.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
33

Dubas, L. G. "Single-component relativistic electron flux". Technical Physics Letters 32, n.º 6 (junio de 2006): 527–28. http://dx.doi.org/10.1134/s106378500606023x.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
34

Jeong, Moon-Young, Yoon-Ha Jeong, Sung-Woo Hwang y Dae M. Kim. "Performance of Single-Electron Transistor Logic Composed of Multi-gate Single-Electron Transistors". Japanese Journal of Applied Physics 36, Part 1, No. 11 (15 de noviembre de 1997): 6706–10. http://dx.doi.org/10.1143/jjap.36.6706.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
35

Chen, Wei. "Fabrication and physics of 2 nm islands for single electron devices". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, n.º 6 (noviembre de 1995): 2883. http://dx.doi.org/10.1116/1.588310.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
36

Jia, Zhaosai, Hailong Wang, Chuanhe Ma, Xin Cao y Qian Gong. "Electron–electron scattering rate in CdTe/CdMnTe single quantum well". International Journal of Modern Physics B 35, n.º 21 (31 de julio de 2021): 2150221. http://dx.doi.org/10.1142/s0217979221502210.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
Resumen
CdMnTe is demonstrated to be a good candidate in the X-ray and [Formula: see text]-ray detector application, however, there are few reports on theoretical analysis of electron scattering rate in CdMnTe quantum well. Within the framework of effective mass approximation and envelope function approximation, the influence of the Mn alloy composition ([Formula: see text], the well width ([Formula: see text], the electron temperature ([Formula: see text] and the electron density ([Formula: see text] on the electron–electron scattering rate (1/[Formula: see text] in the CdTe/Cd[Formula: see text]Mn[Formula: see text]Te single quantum well (SQW), are simulated by shooting method and Fermi’s Golden Rule. The results show that 1/[Formula: see text] is significant inverse proportional to [Formula: see text], but positively proportional to [Formula: see text] and [Formula: see text]. Except for a small peak at 20 K, 1/[Formula: see text] is not sensitive to [Formula: see text]. The above differential dependency of 1/[Formula: see text] on [Formula: see text] and [Formula: see text] can be interpreted by sub-band separation ([Formula: see text], which is proportional to [Formula: see text] but inversely proportional to [Formula: see text]. When [Formula: see text] decreases gradually, the electron transition becomes easier, which leads to 1/[Formula: see text] increases. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by kinetic energy of electrons. The larger the electron kinetic energy is, the more difficult the electron transition from first excited state to ground state is, which leads to 1/[Formula: see text] decreasing. The dependency of 1/[Formula: see text] on [Formula: see text] can be interpreted by the Coulomb interaction between electrons, i.e., the increase of electron collision probability caused by the increase of [Formula: see text].
37

Thelander, Claes, Henrik A. Nilsson, Linus E. Jensen y Lars Samuelson. "Nanowire Single-Electron Memory". Nano Letters 5, n.º 4 (abril de 2005): 635–38. http://dx.doi.org/10.1021/nl050006s.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
38

Rafiq, M. A., Z. A. K. Durrani, H. Mizuta, A. Colli, P. Servati, A. C. Ferrari, W. I. Milne y S. Oda. "Room temperature single electron charging in single silicon nanochains". Journal of Applied Physics 103, n.º 5 (marzo de 2008): 053705. http://dx.doi.org/10.1063/1.2887988.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
39

Hasko, D. G., T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam et al. "Single shot measurement of a silicon single electron transistor". Applied Physics Letters 93, n.º 19 (10 de noviembre de 2008): 192116. http://dx.doi.org/10.1063/1.3028344.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
40

Kubatkin, Sergey, Andrey Danilov, Mattias Hjort, Jérôme Cornil, Jean-Luc Brédas, Nicolai Stuhr-Hansen, Per Hedegård y Thomas Bjørnholm. "Single electron transistor with a single conjugated molecule". Current Applied Physics 4, n.º 5 (agosto de 2004): 554–58. http://dx.doi.org/10.1016/j.cap.2004.01.018.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
41

Matheoud, Alessandro V., Nergiz Sahin y Giovanni Boero. "A single chip electron spin resonance detector based on a single high electron mobility transistor". Journal of Magnetic Resonance 294 (septiembre de 2018): 59–70. http://dx.doi.org/10.1016/j.jmr.2018.07.002.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
42

Hwang, Sung Woo, Toshitsugu Sakamoto y Kazuo Nakamura. "Single Electron Digital Phase Modulator". Japanese Journal of Applied Physics 34, Part 1, No. 1 (15 de enero de 1995): 83–84. http://dx.doi.org/10.1143/jjap.34.83.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
43

Akazawa, Masamichi y Yoshihito Amemiya. "Directional Single-Electron-Tunneling Junction". Japanese Journal of Applied Physics 35, Part 1, No. 6A (15 de junio de 1996): 3569–75. http://dx.doi.org/10.1143/jjap.35.3569.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
44

Kirihara, Masaharu y Kenji Taniguchi. "A Single Electron Neuron Device". Japanese Journal of Applied Physics 36, Part 1, No. 6B (30 de junio de 1997): 4172–75. http://dx.doi.org/10.1143/jjap.36.4172.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
45

von Borczyskowski, C., J. Köhler, W. E. Moerner, M. Orrit y J. Wrachtrup. "Single-molecule electron spin resonance". Applied Magnetic Resonance 31, n.º 3-4 (septiembre de 2007): 665–76. http://dx.doi.org/10.1007/bf03166609.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
46

So, Hye-Mi, Jinhee Kim, Wan Soo Yun, Jong Wan Park, Ju-Jin Kim, Do-Jae Won, Yongku Kang y Changjin Lee. "Molecule-based single electron transistor". Physica E: Low-dimensional Systems and Nanostructures 18, n.º 1-3 (mayo de 2003): 243–44. http://dx.doi.org/10.1016/s1386-9477(02)00996-7.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
47

Abramov, I. I. y E. G. Novik. "Classification of single-electron devices". Semiconductors 33, n.º 11 (noviembre de 1999): 1254–59. http://dx.doi.org/10.1134/1.1187860.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
48

Yu, Yun Seop, Seung Hun Son, Hee Tae Kim, Yong Gyu Kim, Jung Hyun Oh, Hanjung Kim, Sung Woo Hwang, Bum Ho Choi y Doyeol Ahn. "Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor". Japanese Journal of Applied Physics 46, n.º 4B (24 de abril de 2007): 2592–95. http://dx.doi.org/10.1143/jjap.46.2592.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
49

Fernández-Rossier, J., R. Aguado y L. Brey. "Anisotropic magnetoresistance in single electron transport". physica status solidi (c) 3, n.º 12 (diciembre de 2006): 4231–34. http://dx.doi.org/10.1002/pssc.200672837.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
50

Speirs, Rory W., Corey T. Putkunz, Andrew J. McCulloch, Keith A. Nugent, Benjamin M. Sparkes y Robert E. Scholten. "Single-shot electron diffraction using a cold atom electron source". Journal of Physics B: Atomic, Molecular and Optical Physics 48, n.º 21 (23 de septiembre de 2015): 214002. http://dx.doi.org/10.1088/0953-4075/48/21/214002.

Texto completo
Los estilos APA, Harvard, Vancouver, ISO, etc.
También puede estar interesado en las bibliografías sobre el tema "Single-Electron physics" para otros tipos de fuentes:
Tesis

Pasar a la bibliografía