Artículos de revistas sobre el tema "Single Crystal Thin Film Growth"
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Seifert, A., A. Vojta, J. S. Speck y F. F. Lange. "Microstructural instability in single-crystal thin films". Journal of Materials Research 11, n.º 6 (junio de 1996): 1470–82. http://dx.doi.org/10.1557/jmr.1996.0183.
Texto completoCai, Chuanbing y Hiroyuki Fujimoto. "Effects of Nd123/MgO Thin Film and MgO Single-crystal Seeds in Isothermal Solidification of YBaCuO/Ag". Journal of Materials Research 15, n.º 8 (agosto de 2000): 1742–48. http://dx.doi.org/10.1557/jmr.2000.0251.
Texto completoIchikawa, Yoko, Toshiyuki Matsunaga, Mohsen Hassan, Isaku Kanno, Takaaki Suzuki y Kiyotaka Wasa. "Growth and structure of heteroepitaxial lead titanate thin films constrained by miscut strontium titanate substrates". Journal of Materials Research 21, n.º 5 (1 de mayo de 2006): 1261–68. http://dx.doi.org/10.1557/jmr.2006.0162.
Texto completoChang, H. L. M., T. J. Zhang, H. Zhang, J. Guo, H. K. Kim y D. J. Lam. "Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD". Journal of Materials Research 8, n.º 10 (octubre de 1993): 2634–43. http://dx.doi.org/10.1557/jmr.1993.2634.
Texto completoKrakow, W., N. M. Rivera, R. A. Roy, R. S. Ruoff y J. J. Cuomo. "Epitaxial growth of C60 thin films on mica". Journal of Materials Research 7, n.º 4 (abril de 1992): 784–87. http://dx.doi.org/10.1557/jmr.1992.0784.
Texto completoOhtake, Mitsuru, Shigeyuki Minakawa y Masaaki Futamoto. "Preparation of 3d Ferromagnetic Transition Metal Thin Films with Metastable bcc Structure on GaAs(100) Substrates". Key Engineering Materials 605 (abril de 2014): 478–82. http://dx.doi.org/10.4028/www.scientific.net/kem.605.478.
Texto completoWang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang y Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films". IUCrJ 7, n.º 1 (1 de enero de 2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.
Texto completoMiller, K. T. y F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding". Journal of Materials Research 6, n.º 11 (noviembre de 1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.
Texto completoHeimann, D., T. Wagner, J. Bill, F. Aldinger y F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, n.º 11 (noviembre de 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Texto completoTamaki, Jun, Gregory K. L. Goh y Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition". Journal of Materials Research 15, n.º 12 (diciembre de 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.
Texto completoYang, Tsung-Han, Chunming Jin, Ravi Aggarwal, R. J. Narayan y Jay Narayan. "On growth of epitaxial vanadium oxide thin film on sapphire (0001)". Journal of Materials Research 25, n.º 3 (marzo de 2010): 422–26. http://dx.doi.org/10.1557/jmr.2010.0059.
Texto completoMurakami, Toshiaki y Minoru Suzuki. "Single-Crystal Thin-Film Growth and Properties of BaPb1-xBixO3". Japanese Journal of Applied Physics 24, S2 (1 de enero de 1985): 323. http://dx.doi.org/10.7567/jjaps.24s2.323.
Texto completoWASA, K., S. H. SEO, D. Y. NOH, I. KANNO y T. SUZUKI. "HETEROEPITAXIAL GROWTH OF STRESS FREE SINGLE CRYSTAL PEROVSKITE THIN FILMS". Surface Review and Letters 13, n.º 02n03 (abril de 2006): 167–72. http://dx.doi.org/10.1142/s0218625x06008189.
Texto completoShaw, David T. "Controlled Growth of High-Temperature Superconducting Thin Films on Polycrystalline Substrates". MRS Bulletin 17, n.º 8 (agosto de 1992): 39–44. http://dx.doi.org/10.1557/s0883769400041841.
Texto completoGrant Norton, M. y C. Barry Carter. "Observation of the early stages of heteroepitactic growth of BaTiO3 thin-films". Journal of Materials Research 5, n.º 12 (diciembre de 1990): 2762–65. http://dx.doi.org/10.1557/jmr.1990.2762.
Texto completoWasa, Kiyotaka, Isaku Kanno y Takaaki Suzuki. "Structure and Electromechanical Properties of Quenched PMN-PT Single Crystal Thin Films". Advances in Science and Technology 45 (octubre de 2006): 1212–17. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1212.
Texto completoMoustakas, Theodore D. "Molecular Beam Epitaxy: Thin Film Growth and Surface Studies". MRS Bulletin 13, n.º 11 (noviembre de 1988): 29–36. http://dx.doi.org/10.1557/s0883769400063892.
Texto completoSong, Yiwen, Chi Zhang, James Spencer Lundh, Hsien-Lien Huang, Yue Zheng, Yingying Zhang, Mingyo Park et al. "Growth-microstructure-thermal property relations in AlN thin films". Journal of Applied Physics 132, n.º 17 (7 de noviembre de 2022): 175108. http://dx.doi.org/10.1063/5.0106916.
Texto completoNg, Man Fai y Michael J. Cima. "Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates". Journal of Materials Research 12, n.º 5 (mayo de 1997): 1306–14. http://dx.doi.org/10.1557/jmr.1997.0179.
Texto completoKang, Geon-Hyeong, Ki Chul Jung, Jongbum Kim, JoonHyun Kang, In Soo Kim y Young-Hwan Kim. "Growth of High-Quality Perovskite KTa1-xNbxO3 Thin Films by RF Magnetron Co-Sputtering". Coatings 12, n.º 11 (21 de noviembre de 2022): 1787. http://dx.doi.org/10.3390/coatings12111787.
Texto completoHe, Xi, Xiaotao Xu, Xiaoyan Shi y Ivan Božović. "Optimization of La2−xSrxCuO4 Single Crystal Film Growth via Molecular Beam Epitaxy". Condensed Matter 8, n.º 1 (20 de enero de 2023): 13. http://dx.doi.org/10.3390/condmat8010013.
Texto completoGrant Norton, M., James Bentley y Rand R. Biggers. "In Situ Electron Microscopy observations of structural transformations in single crystal lanthanum aluminate". Proceedings, annual meeting, Electron Microscopy Society of America 53 (13 de agosto de 1995): 238–39. http://dx.doi.org/10.1017/s0424820100137562.
Texto completoTakeyama, Shojiro, Katsuyosi Watanabe y Teruo Komatsu. "Thin-Film Single-Crystal Growth of BiI3by a Hot Wall Technique". Japanese Journal of Applied Physics 29, Part 1, No. 4 (20 de abril de 1990): 710–17. http://dx.doi.org/10.1143/jjap.29.710.
Texto completoKomatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu y Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition". Journal of Materials Science Research 5, n.º 2 (31 de enero de 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.
Texto completoRen, Shi Wei, Jing Wei Sun y Yan Zhong Hao. "Simulation of the Growth, Structure and Crystallization of the Amorphous Silicon Thin Film". Advanced Materials Research 602-604 (diciembre de 2012): 1457–60. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1457.
Texto completoQiu, Yu, Peter Gerstel, Linqin Jiang, Peter Lipowsky, Luciana Pitta Bauermann y Joachim Bill. "Aqueous solution deposition of indium hydroxide and indium oxide columnar type thin films". International Journal of Materials Research 97, n.º 6 (1 de junio de 2006): 808–11. http://dx.doi.org/10.1515/ijmr-2006-0130.
Texto completoKitahara, Gyo, Satoru Inoue, Toshiki Higashino, Mitsuhiro Ikawa, Taichi Hayashi, Satoshi Matsuoka, Shunto Arai y Tatsuo Hasegawa. "Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation". Science Advances 6, n.º 41 (octubre de 2020): eabc8847. http://dx.doi.org/10.1126/sciadv.abc8847.
Texto completoWang, Jing, Weiyuan Wang, Jiyu Fan, Huan Zheng, Hao Liu, Chunlan Ma, Lei Zhang et al. "Epitaxial growth and room-temperature ferromagnetism of quasi-2D layered Cr4Te5 thin film". Journal of Physics D: Applied Physics 55, n.º 16 (24 de enero de 2022): 165001. http://dx.doi.org/10.1088/1361-6463/ac47c2.
Texto completoResel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller y Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface". Crystals 9, n.º 7 (22 de julio de 2019): 373. http://dx.doi.org/10.3390/cryst9070373.
Texto completoGrant Norton, M. y C. Barry Carter. "Nucleation and Heteroepitaxy of YBa2Cu3O7-δ thin films". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 88–89. http://dx.doi.org/10.1017/s0424820100173571.
Texto completoSeifert, Andreas. "Epitaxial growth of PbTiO3 thin films on {100} SrTiO3 from solution precursors". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 576–77. http://dx.doi.org/10.1017/s042482010017061x.
Texto completoChaudhuri, J., R. Thokala, J. H. Edgar y B. S. Sywe. "Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy". Advances in X-ray Analysis 39 (1995): 645–51. http://dx.doi.org/10.1154/s0376030800023077.
Texto completoEndoh, Norifumi, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo et al. "High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications". Nanomaterials 11, n.º 2 (4 de febrero de 2021): 392. http://dx.doi.org/10.3390/nano11020392.
Texto completoCheng, Xiankun, Qiang Gao, Kaifeng Li, Zhongliang Liu, Qinzhuang Liu, Qiangchun Liu, Yongxing Zhang y Bing Li. "Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition". Nanomaterials 9, n.º 8 (24 de julio de 2019): 1061. http://dx.doi.org/10.3390/nano9081061.
Texto completoMiller, K. T., F. F. Lange y D. B. Marshall. "The instability of polycrystalline thin films: Experiment and theory". Journal of Materials Research 5, n.º 1 (enero de 1990): 151–60. http://dx.doi.org/10.1557/jmr.1990.0151.
Texto completoShin, D. H., J. Silcox, S. E. Russek, D. K. Lathrop, B. Moeckly y R. A. Buhrman. "Quasi-epitaxial orientations of grains and structure of grain boundaries in YBa2Cu3O7−x thin films". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 4–5. http://dx.doi.org/10.1017/s0424820100173157.
Texto completoFave, A., S. Berger, A. Beaumont, B. Semmache, P. Kleimann, J. Linnroos y A. Laugier. "LPE growth of textured single crystal silicon thin film for PV applications". Thin Solid Films 383, n.º 1-2 (febrero de 2001): 209–11. http://dx.doi.org/10.1016/s0040-6090(00)01619-9.
Texto completoIto, Akihiko, Hiroshi Masumoto y Takashi Goto. "Morphology of Epitaxially Grown BaRuO3 and CaRuO3 Thin Films by Laser Ablation". Key Engineering Materials 352 (agosto de 2007): 315–18. http://dx.doi.org/10.4028/www.scientific.net/kem.352.315.
Texto completoFrancis, Andrew J. y Paul A. Salvador. "Crystal orientation and surface morphology of face-centered-cubic metal thin films deposited upon single-crystal ceramic substrates using pulsed laser deposition". Journal of Materials Research 22, n.º 1 (enero de 2007): 89–102. http://dx.doi.org/10.1557/jmr.2007.0014.
Texto completoTu, Rong, Jin Huang, Song Zhang y Lian Meng Zhang. "Epitaxial Growth of Copper Film by MOCVD". Key Engineering Materials 680 (febrero de 2016): 507–10. http://dx.doi.org/10.4028/www.scientific.net/kem.680.507.
Texto completoNashimoto, Keiichi, Michael J. Cima, Paul C. McIntyre y Wendell E. Rhine. "Microstructure development of sol-gel derived epitaxial LiNbO3 thin films". Journal of Materials Research 10, n.º 10 (octubre de 1995): 2564–72. http://dx.doi.org/10.1557/jmr.1995.2564.
Texto completoHuang, Jen Ching, Yi Chia Liao, Huail Siang Liu y Fu Jen Cheng. "The Study on Deposition Process and Mechanical Properties of Deposited Cu Thin Films Using Molecular Dynamics". Advanced Materials Research 684 (abril de 2013): 37–41. http://dx.doi.org/10.4028/www.scientific.net/amr.684.37.
Texto completoHwang, Cheol Seong, Mark D. Vaudin y Gregory T. Stauf. "Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition". Journal of Materials Research 12, n.º 6 (junio de 1997): 1625–33. http://dx.doi.org/10.1557/jmr.1997.0222.
Texto completoZhang, Ying Xiao, Hong Li Suo, Yue Zhao, Min Liu, Rong Wang, Dong He, Lin Ma y Mei Ling Zhou. "Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method". Materials Science Forum 546-549 (mayo de 2007): 2011–14. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.2011.
Texto completoJokerst, N. M. "Integrated Optoelectronics Using Thin Film Epitaxial Liftoff Materials and Devices". Journal of Nonlinear Optical Physics & Materials 06, n.º 01 (marzo de 1997): 19–48. http://dx.doi.org/10.1142/s0218863597000034.
Texto completoOjonugwa Daniel, Thomas, Uno Essang Uno, Kasim Uthman Isah y Umaru Ahmadu. "Structural and microstructural study of SnS thin film semiconductor of 0.2". International Journal of Physical Research 7, n.º 1 (27 de mayo de 2019): 26. http://dx.doi.org/10.14419/ijpr.v7i1.27700.
Texto completoChien, A. T., L. Zhao, M. Colic, J. S. Speck y F. F. Lange. "Microstructural development of BaTiO3 heteroepitaxial thin films by hydrothermal synthesis". Journal of Materials Research 13, n.º 3 (marzo de 1998): 649–59. http://dx.doi.org/10.1557/jmr.1998.0081.
Texto completoNutt, S. R. y David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (agosto de 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Texto completoSaraf, L. V., Z. H. Zhu, C. M. Wang y M. H. Engelhard. "Microstructure and secondary phase segregation correlation in epitaxial/oriented ZnO films with unfavorable Cr dopant". Journal of Materials Research 24, n.º 2 (febrero de 2009): 506–15. http://dx.doi.org/10.1557/jmr.2009.0054.
Texto completoPavlenko A.V., Stryukov D. V. y Kubrin S.P. "The phase composition and structure of the BiFeO-=SUB=-3-=/SUB=- film grown on MgO(001) substrate by high frequency cathode deposition in oxygen atmosphere". Physics of the Solid State 64, n.º 2 (2022): 206. http://dx.doi.org/10.21883/pss.2022.02.52969.215.
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