Literatura académica sobre el tema "Single Crystal Thin Film Growth"
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Artículos de revistas sobre el tema "Single Crystal Thin Film Growth"
Seifert, A., A. Vojta, J. S. Speck y F. F. Lange. "Microstructural instability in single-crystal thin films". Journal of Materials Research 11, n.º 6 (junio de 1996): 1470–82. http://dx.doi.org/10.1557/jmr.1996.0183.
Texto completoCai, Chuanbing y Hiroyuki Fujimoto. "Effects of Nd123/MgO Thin Film and MgO Single-crystal Seeds in Isothermal Solidification of YBaCuO/Ag". Journal of Materials Research 15, n.º 8 (agosto de 2000): 1742–48. http://dx.doi.org/10.1557/jmr.2000.0251.
Texto completoIchikawa, Yoko, Toshiyuki Matsunaga, Mohsen Hassan, Isaku Kanno, Takaaki Suzuki y Kiyotaka Wasa. "Growth and structure of heteroepitaxial lead titanate thin films constrained by miscut strontium titanate substrates". Journal of Materials Research 21, n.º 5 (1 de mayo de 2006): 1261–68. http://dx.doi.org/10.1557/jmr.2006.0162.
Texto completoChang, H. L. M., T. J. Zhang, H. Zhang, J. Guo, H. K. Kim y D. J. Lam. "Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD". Journal of Materials Research 8, n.º 10 (octubre de 1993): 2634–43. http://dx.doi.org/10.1557/jmr.1993.2634.
Texto completoKrakow, W., N. M. Rivera, R. A. Roy, R. S. Ruoff y J. J. Cuomo. "Epitaxial growth of C60 thin films on mica". Journal of Materials Research 7, n.º 4 (abril de 1992): 784–87. http://dx.doi.org/10.1557/jmr.1992.0784.
Texto completoOhtake, Mitsuru, Shigeyuki Minakawa y Masaaki Futamoto. "Preparation of 3d Ferromagnetic Transition Metal Thin Films with Metastable bcc Structure on GaAs(100) Substrates". Key Engineering Materials 605 (abril de 2014): 478–82. http://dx.doi.org/10.4028/www.scientific.net/kem.605.478.
Texto completoWang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang y Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films". IUCrJ 7, n.º 1 (1 de enero de 2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.
Texto completoMiller, K. T. y F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding". Journal of Materials Research 6, n.º 11 (noviembre de 1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.
Texto completoHeimann, D., T. Wagner, J. Bill, F. Aldinger y F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, n.º 11 (noviembre de 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Texto completoTamaki, Jun, Gregory K. L. Goh y Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition". Journal of Materials Research 15, n.º 12 (diciembre de 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.
Texto completoTesis sobre el tema "Single Crystal Thin Film Growth"
Nandhakumar, Iris. "The early stages of CdTe epitaxial growth on gold single crystal electrode surfaces". Thesis, University of Southampton, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242869.
Texto completoImanieh, Mohsen. "Growth and characterisation of CuInSeâ†2 and CuGAâ†XInâ†1-â†XSeâ†2 single crystals". Thesis, University of Salford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253047.
Texto completoLee, Myoung-Bok. "The growth and spectroscopic characterisation of ultra-thin aluminium oxide films on single crystal metal surfaces". Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.309877.
Texto completoZhang, Xi. "Vapor Phase Growth of ZnO Single Crystals/Thin Films and Attempts for p-type Doping". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-142870.
Texto completoIn dieser Arbeit wurde das Wachstum von ZnO-Einkristallen und Dünnfilmschichten auf Si durch chemische Gasphasenabscheidung in einem offenen System untersucht. Die hergestellten ZnO-Einkristalle wurden mit Photolumineszenzmessungen (PL) untersucht. Es konnten sowohl in unbehandelten als auch in mit Wasserstoff behandelten Proben zwei charakteristische Linien beobachtet werden. Sowohl die bisherigen Versuche zur p-Typ Dotierung von ZnO als auch die in dieser Arbeit durchgeführten Versuche mit Stickstoff und Antimon werden zusammengefasst und präsentiert. Die Keimkristall-freie Gasphasenabscheidung (CVD) in offenen Systemen ist eine einfache und kostengünstige Methode zur Herstellung von qualitativ hochwertigen ZnO-Einkristallen. Die Wachstumsparameter, einschließlich der Flussraten von N2, H2 und O2 sowie der Wachstumstemperatur beeinflussen das Kristallwachstum sowie die optischen Eigenschaften der hergestellten Kristalle. Die hergestellten Kristalle wachsen typischerweise als entlang der c-Achse orientierte Nadeln mit Längen von bis zu 40 mm und Durchmessern von bis zu 1 mm. Die nadelförmigen Kristalle besitzen eine n-Typ Dotierung, welche hauptsächlich durch Verunreinigung mit Al, Ga und In verursacht wird. Zwei bisher nicht identifizierte PL-Linien (P1 bei 3,3643 eV und P2 bei 3,3462 eV) wurden in den hergestellten Kristallen beobachtet. P1 wird der Rekombination von Exzitonen an flachen Donatoren mit einer Bindungsenergie von 42,2 meV zugeordnet. Eine Wasserstoffbehandlung der hergestellten Kristalle führt zum Erscheinen der P2-Linie und einer starken Unterdrückung der P1-Linie. Anschließende isochronische Temperung in Luft führt zu einer schrittweisen Reduzierung der Intensität der P2-Linie und zu einer Verstärkung der P1-Linie. Photolumineszenzmessungen weisen auf eine Korrelation von P2 mit Wasserstoff hin. Zusätzlich wurden mit der CVD-Methode dünne ZnO-Schichten auf Si-Substraten abgeschieden. Drei unterschiedliche Konfigurationen mit verschiedenen Ausgangsmaterialien (ZnO-Pulver bw. Zn-Pulver) und verschiedenen Oxidationsmitteln (O2 bzw. Wasser) wurden untersucht und verglichen. Es wird gezeigt, dass mit den Konfigurationen mit geringerer Wachstumstemperatur am einfachsten homogene ZnO-Schichten auf Si abgeschieden werden können. Ein Donator-Akzeptor-Paar-Übergang (DAP) bei 3,245 eV und die dazugehörigen Phononenrepliken wurden in den Schichten beobachtet, welche in einer Wasserstoff-freien Konfiguration abgeschieden wurden. Diese DAP-Übergänge sind ein Hinweis auf die Anwesenheit von Akzeptoren. Die seit langem bestehende Herausforderung der p-Typ-Dotierung von ZnO hat ihre Wurzeln hauptsächlich in dem niedrig liegenden Valenzbandmaximum (VBM) auf der absoluten Energieskala, der spontanen Bildung von kompensierenden Defekten sowie dem Mangel an geeigneten Akzeptoren mit geringer Ionisierungsenergie. Zwei Versuche zur p-Typ-Dotierung von ZnO durch Behandlung der Kristalle mit N-Plasma bzw. durch in-situ Dotierung mit Sb während des Kristallwachstums wurden durchgeführt. Allerdings konnte damit keine nachweisbare Löcherleitung in den behandelten Proben erreicht werden
Al-Dhafiri, Abdullah M. "CdS-CuₓS single crystal and thin film solar cells". Thesis, Durham University, 1988. http://etheses.dur.ac.uk/6617/.
Texto completoBarnes, C. J. "Adsorption of metals on single crystal substrates". Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234834.
Texto completoNunes, Benjamin P. (Benjamin Paul) 1976. "Edge-defined film-fed growth of single-crystal piezoelectrics". Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/17530.
Texto completoIncludes bibliographical references (leaves 97-99).
Many transducer technologies would benefit tremendously from the development of shaped, oriented single-crystals, of a high-strain, piezoelectric material. Recently, unusually high electrostrictive and piezoelectric actuation has been observed in polycrystals and flux-grown <100> single-crystals of ... Using seeded, Edgedefined Film-fed Growth (EFG) and the related Stepanov Technique (ST), low-hysteresis, highstrain, <100> and <111> oriented, single-crystals of BNBZT can be grown in rod and fiber form, with direct applications in active fiber composites and related devices. For this work, <100> and <111> oriented, single-crystal rods and fibers were grown via ST and EFG. Fibers, 260-700[mu]m in diameter and over 1.0 meter long, were grown using a custom built EFG machine and a capillary-shaper; rods, 2-3mm in diameter, up to 110mm long were grown using a floating-shaper. In all cases, strontium titanate (STO) was found to be an effective seed crystal. <111> oriented tetragonal crystals generated low hysteresis actuation consistent with a polarization rotation mechanism [14], but with only modest strains: ... <100> oriented tetragonal BNBZT generated high strains up to ... with hysteresis consistent with 90° domain switching. Electromechanical actuation and crystal structure in this system appear to be strongly affected by deviations from stoichiometry (B-site vacancies). Barium segregation and bismuth vaporization can also compromise electromechanical performance. Hypotheses are posed to explain the low actuation seen from <111> oriented ferroelectrics, and the effects of cation deficiencies on phase-stability. Cracks, pores, and other growth challenges encountered in ST and EFG growth of BNBZT are described.
by Benjamin P. Nunes.
S.M.
Swift, Michael Joseph Robert. "Aspects of single crystal and thin film high field electroluminescence". Thesis, University of Hull, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304437.
Texto completoHashim, K. I. "A study of crystal growth by field emission microscopy". Thesis, Bangor University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380230.
Texto completoHuang, Pao-Cheng. "Analysis of single-crystal semiconductor thin film structure by x-ray diffraction". Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/20145.
Texto completoLibros sobre el tema "Single Crystal Thin Film Growth"
United States. National Aeronautics and Space Administration., ed. System for the growth of bulk SiC crystals by modified CVD techniques: Final report. [Washington, DC: National Aeronautics and Space Administration, 1994.
Buscar texto completoOutlaw, R. A. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. Washington: NASA, 1986.
Buscar texto completoP, Hopson y United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.
Buscar texto completoP, Hopson y United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch, eds. Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Branch, 1986.
Buscar texto completoIn-situ characterization of thin film growth. Cambridge: Woodhead Publishing, 2011.
Buscar texto completoNATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures (1986 University of Sussex). Thin film growth techniques for low-dimensional structures. New York: Plenum Press, 1987.
Buscar texto completoJ, Srolovitz David y Materials Research Society Symposium on the "Modeling and Simulation of Thin-Film Processing" (1995 : San Francisco, Calif.), eds. Modeling and simulation of thin-film processing: Symposium held April 17-20, 1995, San Francisco, California, U.S.A. Pittsburgh, Penn: Materials Research Society, 1995.
Buscar texto completoUnited States. National Aeronautics and Space Administration., ed. Enhancement of thickness uniformity of thin films grown by pulsed laser deposition. [Washington, D.C.?: National Aeronautics and Space Administration, 1995.
Buscar texto completoVladimir, Matias y Materials Research Society Meeting, eds. Artificially induced grain alignment in thin films: Symposium held December 2-3, 2008, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2009.
Buscar texto completo1921-, Atwater H. A., ed. Evolution of surface and thin film microstructure: Symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A. Pittsburgh, Pa: Materials Research Society, 1993.
Buscar texto completoCapítulos de libros sobre el tema "Single Crystal Thin Film Growth"
Nagaoka, Akira y Kenji Yoshino. "Growth of CZTS Single Crystals". En Copper Zinc Tin Sulfide-Based Thin-Film Solar Cells, 133–48. Chichester, UK: John Wiley & Sons Ltd, 2015. http://dx.doi.org/10.1002/9781118437865.ch6.
Texto completoKonishi, M., K. Hayashi, A. Odagawa, Y. Enomoto, Y. Yamada, M. Nakamura, K. Ohtsu et al. "Homo-Epitaxial Growth of YBCO Thin Film on YBCO Single Crystal". En Advances in Superconductivity VI, 995–98. Tokyo: Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68266-0_226.
Texto completoNorton, David P., Douglas H. Lowndes, D. K. Christen, E. C. Jones, J. D. Budai, Thomas D. Ketcham, Dell St.julien, K. W. Lay y J. E. Tkaczyk. "YBa2Cu3O7−x Thin Film Growth on Single Crystal and Polycrystalline Yttria-Stabilized Zirconia". En Science and Technology of Thin Film Superconductors 2, 157–65. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_24.
Texto completoHeinrich, B., A. S. Arrott, J. F. Cochran, S. T. Purcell, K. B. Urquhart, N. Alberding y C. Liu. "Epitaxial Growths and Surface Science Techniques Applied to the Case of Ni Overlayers on Single Crystal Fe(001)". En Thin Film Growth Techniques for Low-Dimensional Structures, 521–48. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4684-9145-6_29.
Texto completoBozovic, I., J. N. Eckstein, D. G. Schlom y J. S. Harris. "In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy". En Science and Technology of Thin Film Superconductors 2, 267–72. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_39.
Texto completoFan, Y. C., A. G. Fitzgerald, H. C. Xu, B. E. Storey, A. O. Tooke, P. R. Broussard y V. C. Cestone. "Atomic force microscopy studies of the surface morphology of annealed single crystal substrates and substrate annealing effects on the YBa2Cu3O7-x thin film growth". En Electron Microscopy and Analysis 1997, 205–8. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003063056-53.
Texto completoMakita, T., M. Ogihara, F. Toda y H. Abe. "Initial Crystal Growth Stage of BRBO Thin Film". En Advances in Superconductivity V, 919–22. Tokyo: Springer Japan, 1993. http://dx.doi.org/10.1007/978-4-431-68305-6_207.
Texto completoThiru, Sathiabama, Miki Fujita, Atsushi Kawaharazuka y Yoshiji Horikoshi. "Electrical and Photoluminescence Study of Undoped CuGaSe2 Single Crystal Thin Film". En The Malaysia-Japan Model on Technology Partnership, 265–70. Tokyo: Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-54439-5_25.
Texto completoMatus, M., J. Winter y H. Kuzmany. "Stability of Single-Crystal and Thin-Film Raman Spectra in C60". En Springer Series in Solid-State Sciences, 255–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-85049-3_42.
Texto completoOzawa, S., Y. Sasajima y T. Haseda. "Crystal Growth, Fractal Growth and Liquid-like Behavior in the Case of Thin Film Formation". En Springer Proceedings in Physics, 198–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-76008-2_38.
Texto completoActas de conferencias sobre el tema "Single Crystal Thin Film Growth"
Xu, Jianjun, Ligui Zhou y M. Thakur. "Electro-optic Modulation Based on Channel Waveguide of Organic Single Crystal Material". En Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/otfa.1997.the.24.
Texto completoZhou, Biao, Chengzhi Su, Biao Shi, Yunjiao Wang, Leyong Yu, Shuanglong Feng y Deqiang Wang. "Growth of single crystal WS2 thin films via atmospheric pressure CVD". En 2017 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2017. http://dx.doi.org/10.1109/3m-nano.2017.8286279.
Texto completoTsukruk, V. V., A. Liebmann, Foster, D. H. Reneker, V. N. Bliznyuk, S. Kirstein y H. Möhwald. "Composite Molecular Films From Cyanine Dye Single Crystals Grown On Lipid Monolayers". En Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/otfa.1993.wd.19.
Texto completoUeda, H., K. Takeuchi y A. Kikuchi. "Precipitation of thin film organic single crystals by a novel crystal growth method using electrospray and ionic liquid layer". En 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.b-3-03.
Texto completoLeyderman, Alexander, Yulong Cui, Javier W. Li, Sergey S. Sarkisov, Michael J. Curley, Curtis E. Banks y Benjamin G. Penn. "Growth and characterization of single-crystal organic thin films for electro-optic modulators". En SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, editado por Ravindra B. Lal y Donald O. Frazier. SPIE, 1999. http://dx.doi.org/10.1117/12.351425.
Texto completoFocsha, Alexandru, Petru Gashin y Alexei Simashkevich. "Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions". En ASME 2001 Solar Engineering: International Solar Energy Conference (FORUM 2001: Solar Energy — The Power to Choose). American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/sed2001-141.
Texto completoBhowmik, A. K., J. Wang y M. Thakur. "Growth and nonlinear optical studies of single-crystal thin films of 4-aminobenzophenone (ABP)". En Technical Digest Summaries of papers presented at the Conference on Lasers and Electro-Optics Conference Edition. 1998 Technical Digest Series, Vol.6. IEEE, 1998. http://dx.doi.org/10.1109/cleo.1998.676063.
Texto completoZuhr, R. A., T. E. Haynes, S. J. Pennycook y B. R. Appleton. "Heteroepitaxial Growth of GaAs Films by Alternating Ion Beam Deposition". En Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.wc8.
Texto completoRobison, Andrew, Lei Lei, Sowmya Ramarapu y Marisol Koslowski. "Interface Effects in Strained Thin Films". En ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12539.
Texto completoPouladi, Sara, Monika Rathi, Mojtaba Asadirad, Pavel Dutta, Seung Kyu Oh, Devendra Khatiwada, Shahab Shervin, Yao Yao, Venkat Selvamanickam y Jae-Hyun Ryou. "Flexible GaAs Single-Junction Solar Cells Based on Single-Crystal-Like Thin-Film Materials Directly Grown on Metal Tapes". En 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366640.
Texto completoInformes sobre el tema "Single Crystal Thin Film Growth"
Trolier-McKinstry, Susan y Thomas R. Shrout. Crystal Growth and Thin Film Deposition of High Performance Piezoelectrics. Fort Belvoir, VA: Defense Technical Information Center, enero de 2001. http://dx.doi.org/10.21236/ada428818.
Texto completoGalloway, Heather Claire. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy. Office of Scientific and Technical Information (OSTI), diciembre de 1995. http://dx.doi.org/10.2172/219542.
Texto completoJing, Dapeng. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal. Office of Scientific and Technical Information (OSTI), enero de 2010. http://dx.doi.org/10.2172/1037881.
Texto completoRoberts, Joel Glenn. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction. Office of Scientific and Technical Information (OSTI), mayo de 2000. http://dx.doi.org/10.2172/764397.
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