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Artículos de revistas sobre el tema "Silicon solar cells – Materials"

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Autor: Grafiati

Publicado: 4 de junio de 2021

Última modificación: 2 de febrero de 2022

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1

Knobloch, J. y A. Eyer. "Crystalline Silicon Materials and Solar Cells". Materials Science Forum 173-174 (septiembre de 1994): 297–310. http://dx.doi.org/10.4028/www.scientific.net/msf.173-174.297.

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2

Guha, Subhendu. "Materials aspects of amorphous silicon solar cells". Current Opinion in Solid State and Materials Science 2, n.º 4 (agosto de 1997): 425–29. http://dx.doi.org/10.1016/s1359-0286(97)80083-6.

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3

Wenham, S. R. y M. A. Green. "Silicon solar cells". Progress in Photovoltaics: Research and Applications 4, n.º 1 (enero de 1996): 3–33. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<3::aid-pip117>3.0.co;2-s.

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4

Rath, J. K. "Nanocystalline silicon solar cells". Applied Physics A 96, n.º 1 (23 de diciembre de 2008): 145–52. http://dx.doi.org/10.1007/s00339-008-5017-x.

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5

Wang, Ying Lian y Jun Yao Ye. "Review and Development of Crystalline Silicon Solar Cell with Intelligent Materials". Advanced Materials Research 321 (agosto de 2011): 196–99. http://dx.doi.org/10.4028/www.scientific.net/amr.321.196.

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The application of solar cell has offered human society renewable clean energy. As intelligent materials, crystalline silicon solar cells occupy absolutely dominant position in photovoltaic market, and this position will not change for a long time in the future. Thereby increasing the efficiency of crystalline silicon solar cells, reducing production costs and making crystalline silicon solar cells competitive with conventional energy sources become the subject of today's PV market. The working theory of solar cell was introduced. The developing progress and the future development of mono-crystalline silicon (c-Si), poly-crystalline silicon (p-Si) and amorphous silicon (a-Si) solar cell have also been introduced.

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6

Liang, Z. C., D. M. Chen, X. Q. Liang, Z. J. Yang, H. Shen y J. Shi. "Crystalline Si solar cells based on solar grade silicon materials". Renewable Energy 35, n.º 10 (octubre de 2010): 2297–300. http://dx.doi.org/10.1016/j.renene.2010.02.027.

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7

Jia, Yi, Jinquan Wei, Kunlin Wang, Anyuan Cao, Qinke Shu, Xuchun Gui, Yanqiu Zhu et al. "Nanotube-Silicon Heterojunction Solar Cells". Advanced Materials 20, n.º 23 (2 de diciembre de 2008): 4594–98. http://dx.doi.org/10.1002/adma.200801810.

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8

Won, Rachel. "Graphene–silicon solar cells". Nature Photonics 4, n.º 7 (julio de 2010): 411. http://dx.doi.org/10.1038/nphoton.2010.140.

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9

Goswami, Romyani. "Three Generations of Solar Cells". Advanced Materials Research 1165 (23 de julio de 2021): 113–30. http://dx.doi.org/10.4028/www.scientific.net/amr.1165.113.

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In photovoltaic system the major challenge is the cost reduction of the solar cell module to compete with those of conventional energy sources. Evolution of solar photovoltaic comprises of several generations through the last sixty years. The first generation solar cells were based on single crystal silicon and bulk polycrystalline Si wafers. The single crystal silicon solar cell has high material cost and the fabrication also requires very high energy. The second generation solar cells were based on thin film fabrication technology. Due to low temperature manufacturing process and less material requirement, remarkable cost reduction was achieved in these solar cells. Among all the thin film technologies amorphous silicon thin film solar cell is in most advanced stage of development and is commercially available. However, an inherent problem of light induced degradation in amorphous silicon hinders the higher efficiency in this kind of cell. The third generation silicon solar cells are based on nano-crystalline and nano-porous materials. Hydrogenated nanocrystalline silicon (nc-Si:H) is becoming a promising material as an absorber layer of solar cell due to its high stability with high Voc. It is also suggested that the cause of high stability and less degradation of certain nc-Si:H films may be due to the improvement of medium range order (MRO) of the films. During the last ten years, organic, polymer, dye sensitized and perovskites materials are also attract much attention of the photovoltaic researchers as the low budget next generation PV material worldwide. Although most important challenge for those organic solar cells in practical applications is the stability issue. In this work nc-Si:H films are successfully deposited at a high deposition rate using a high pressure and a high power by Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) technique. The transmission electron microscopy (TEM) studies show the formations of distinct nano-sized grains in the amorphous tissue with sharp crystalline orientations. Light induced degradation of photoconductivity of nc-Si:H materials have been studied. Single junction solar cells and solar module were successfully fabricated using nanocrystalline silicon as absorber layer. The optimum cell is 7.1 % efficient initially. Improvement in efficiency can be achieved by optimizing the doped layer/interface and using Ag back contact.

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10

Cho, Eun-Chel, Sangwook Park, Xiaojing Hao, Dengyuan Song, Gavin Conibeer, Sang-Cheol Park y Martin A. Green. "Silicon quantum dot/crystalline silicon solar cells". Nanotechnology 19, n.º 24 (9 de mayo de 2008): 245201. http://dx.doi.org/10.1088/0957-4484/19/24/245201.

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11

Zhang, Xiaodan, Bofei Liu, Lisha Bai, Fang jia, Shuo Wang, Qian Huang, Jian Ni et al. "Advanced Functional Materials: Intrinsic and Doped Silicon Oxide". MRS Proceedings 1771 (2015): 3–8. http://dx.doi.org/10.1557/opl.2015.391.

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ABSTRACTThe unique properties of silicon oxide materials, no matter intrinsic or doped, utilized in thin film solar cells (TFSCs) in the area of photovoltaic (PV) are making TFSCs one of the most attractive photovoltaic technologies for the development of high-performing electricity production units to be integrated in everyday life. In comparison to other silicon materials, the particular diphasic structure of silicon oxide materials, in which hydrogenated microcrystalline silicon (μc-Si:H) crystallites are surrounded by an oxygen-rich hydrogenated amorphous silicon (a-Si:H) phase, causes them present excellent photoelectrical material properties, such as a low-parasitic absorption in the broadband spectral range, independent controllability of longitudinal and lateral conductivity, refractive indices (3.5-2.0), band gap (2.0-2.6 eV) and conductivity tenability (with orders of 1-10-9 S/cm) with oxygen doping, and so on. Various types of silicon oxide materials, including intrinsic, p- or n- type, further applied in TFSCs have also played significant roles in improving the efficiency of various types of single-, dual-, and triple-junction thin-film solar cells from both the optical and electrical points of view. In this paper, we present our latest progress in studying the performance improvement role of intrinsic or doped silicon oxide materials in pin-type a-Si:H, a-SiGe:H, and μc-Si:H single-junction solar cells. By effectively tuning the band gap values of intrinsic a-SiOx:H materials with oxygen doping and adopting the layers with a suitable band gap (1.86 eV) as the P/I buffer layers of a-Si:H solar cells fabricated on metal organic chemical vapor deposition (MOCVD) boron-doped zinc oxide (ZnO:B) substrates, a significant Voc increases up to 909 mV and an excellent external quantum efficiency (EQE) response of 75% at the 400 nm typical wavelength can be achieved by matching the band gap discontinuity between the p-type nc-SiOx:H window and a-Si:H intrinsic layers. The serious leakage current characteristics of pin-type narrow-gap (Eg<1.5 eV) a-SiGe:H single-junction solar cells can also be finely tuned by integrating an n-type μc-SiOx:H layer with a small oxygen content in addition to improving the long-wavelength response, an effective approach gives rise to the highest FF of 70.62% for pin-type a-SiGe:H single-junction solar cells with an average band gap of 1.48 eV. In addition, our studies proved that the application of p-type μc-SiOx:H window layers in μc-Si:H single-junction solar cells can effectively improve the short-wavelength light coupling by suppressing the parasitic absorption and promoting the anti-reflectivity with a graded refractive index profile. On the basis of the optimum single-junction solar cells with omnipotent silicon oxide materials, an initial efficiency of 16.07% has been achieved for pin-type a-Si:H/a-SiGe:H/μc-Si:H triple-junction solar cells with an active area of 0.25 cm2. The omnipotent properties of silicon oxide layers in TFSCs, including effective optical coupling and trapping, suitability in compensating for the band gap discontinuity, the shunt-quenching capacity, and so on, make them likely to be extended to other types of solar cells such as polycrystalline chalcopyrite Cu(In,Ga)Se2 (CIGS) and perovskite-sensitized solar cells, opening up new opportunities for acquiring solar cells with higher performance.

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12

Beaucarne, Guy. "Silicon Thin-Film Solar Cells". Advances in OptoElectronics 2007 (17 de diciembre de 2007): 1–12. http://dx.doi.org/10.1155/2007/36970.

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We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD). In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si) is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

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13

Jia-Yan, LI, CAI Min, WU Xiao-Wei y TAN Yi. "Recycling Polycrystalline Silicon Solar Cells". Journal of Inorganic Materials 33, n.º 9 (2018): 987. http://dx.doi.org/10.15541/jim20170547.

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14

Neuhaus, Dirk-Holger y Adolf Münzer. "Industrial Silicon Wafer Solar Cells". Advances in OptoElectronics 2007 (13 de abril de 2007): 1–15. http://dx.doi.org/10.1155/2007/24521.

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In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

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15

Stelzner, Th, M. Pietsch, G. Andrä, F. Falk, E. Ose y S. Christiansen. "Silicon nanowire-based solar cells". Nanotechnology 19, n.º 29 (10 de junio de 2008): 295203. http://dx.doi.org/10.1088/0957-4484/19/29/295203.

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16

Schmidt, J., K. Bothe, D. Macdonald, J. Adey, R. Jones y D. W. Palmer. "Electronically stimulated degradation of silicon solar cells". Journal of Materials Research 21, n.º 1 (1 de enero de 2006): 5–12. http://dx.doi.org/10.1557/jmr.2006.0012.

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Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

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17

Möller, H. J., C. Funke, M. Rinio y S. Scholz. "Multicrystalline silicon for solar cells". Thin Solid Films 487, n.º 1-2 (septiembre de 2005): 179–87. http://dx.doi.org/10.1016/j.tsf.2005.01.061.

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18

Um, Han-Don, Kangmin Lee, Inchan Hwang, Jeonghwan Park, Deokjae Choi, Namwoo Kim, Hyungwoo Kim y Kwanyong Seo. "Progress in silicon microwire solar cells". Journal of Materials Chemistry A 8, n.º 11 (2020): 5395–420. http://dx.doi.org/10.1039/c9ta12792e.

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19

Cavallo, Carmen, Francesco Di Pascasio, Alessandro Latini, Matteo Bonomo y Danilo Dini. "Nanostructured Semiconductor Materials for Dye-Sensitized Solar Cells". Journal of Nanomaterials 2017 (2017): 1–31. http://dx.doi.org/10.1155/2017/5323164.

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Since O’Regan and Grätzel’s first report in 1991, dye-sensitized solar cells (DSSCs) appeared immediately as a promising low-cost photovoltaic technology. In fact, though being far less efficient than conventional silicon-based photovoltaics (being the maximum, lab scale prototype reported efficiency around 13%), the simple design of the device and the absence of the strict and expensive manufacturing processes needed for conventional photovoltaics make them attractive in small-power applications especially in low-light conditions, where they outperform their silicon counterparts. Nanomaterials are at the very heart of DSSC, as the success of its design is due to the use of nanostructures at both the anode and the cathode. In this review, we present the state of the art for bothn-type andp-type semiconductors used in the photoelectrodes of DSSCs, showing the evolution of the materials during the 25 years of history of this kind of devices. In the case ofp-type semiconductors, also some other energy conversion applications are touched upon.

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20

Chebotarev, S. N., A. S. Pashchenko y D. A. Arustamyan. "Microcrystalline and Amorphous Photovoltaic Silicon Materials Performance Optimization". Materials Science Forum 870 (septiembre de 2016): 74–82. http://dx.doi.org/10.4028/www.scientific.net/msf.870.74.

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A design of a thin-film solar cell based on microcrystalline and amorphous silicon α-Si:H(n-i-p)/μс-Si:O(n-i-p)/μс-Si:H(n-i-p) was proposed. A physical model and software to calculate the functional characteristics of these solar cells were developed. The numerical simulation results show that the efficiency of the optimized thin-film solar cells may reach up to 16.3 %, open circuit voltage 1.96 V, fill factor 78 %. Improved performance of the non-crystalline solar cell is achieved by an increase in absorbance in the visible range 500 – 800 nm to 40 – 60 % and in the near-infrared range of the solar radiation 800 – 1100 nm to 70 – 75 %.

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21

Schropp, Ruud E. I., Reinhard Carius y Guy Beaucarne. "Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells". MRS Bulletin 32, n.º 3 (marzo de 2007): 219–24. http://dx.doi.org/10.1557/mrs2007.25.

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AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.

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22

Xiao, Shaoqing y Shuyan Xu. "High-Efficiency Silicon Solar Cells—Materials and Devices Physics". Critical Reviews in Solid State and Materials Sciences 39, n.º 4 (15 de abril de 2014): 277–317. http://dx.doi.org/10.1080/10408436.2013.834245.

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23

Martinelli, G. "Crystalline Silicon for Solar Cells". Solid State Phenomena 32-33 (diciembre de 1993): 21–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.32-33.21.

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24

Kittler, Martin y Wolfgang Koch. "Crystalline Silicon for Solar Cells". Solid State Phenomena 82-84 (noviembre de 2001): 695–700. http://dx.doi.org/10.4028/www.scientific.net/ssp.82-84.695.

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25

Kalejs, Juris P. "Silicon Ribbons for Solar Cells". Solid State Phenomena 95-96 (septiembre de 2003): 159–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.95-96.159.

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26

Zheng, Peiting, Fiacre Emile Rougieux, Xinyu Zhang, Julien Degoulange, Roland Einhaus, Pascal Rivat y Daniel H. Macdonald. "21.1% UMG Silicon Solar Cells". IEEE Journal of Photovoltaics 7, n.º 1 (enero de 2017): 58–61. http://dx.doi.org/10.1109/jphotov.2016.2616192.

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27

Punathil, Lineesh, K. Mohanasundaram, K. S. Tamilselavan, Ravishankar Sathyamurthy y Ali J. Chamkha. "Recovery of Pure Silicon and Other Materials from Disposed Solar Cells". International Journal of Photoenergy 2021 (16 de abril de 2021): 1–4. http://dx.doi.org/10.1155/2021/5530213.

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The disposal of used photovoltaic panels is increasing day by day around the world. Therefore, an efficient method for recycling disposed photovoltaic panel is required to decrease environmental pollution. This work is aimed at efficiently recovering pure silicon and other materials such as aluminium, silver, and lead from disposed solar cells using chemical treatments. Earlier, the pure silicon was recovered by treating the solar cells with hydrofluoric acid or mixture of hydrofluoric acid and other chemicals. The usage of hydrofluoric acid is eliminated in the present work as it is highly toxic and corrosive chemical. The pure silicon (99.9984%) has been recovered by sequentially treating with three different chemicals. Aluminium, silver, and lead are also recovered as aluminium hydroxide, silver chloride, and lead oxide, respectively.

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28

Donaldson, Laurie. "Silicon nanoparticles help improve solar cells". Materials Today 21, n.º 10 (diciembre de 2018): 994. http://dx.doi.org/10.1016/j.mattod.2018.10.031.

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29

Verhoef, L. A., P.-P. Michiels, S. Roorda, W. C. Sinke y R. J. C. Van Zolingen. "Gettering in polycrystalline silicon solar cells". Materials Science and Engineering: B 7, n.º 1-2 (septiembre de 1990): 49–62. http://dx.doi.org/10.1016/0921-5107(90)90009-z.

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30

Mauk, Michael G. "Silicon solar cells: Physical metallurgy principles". JOM 55, n.º 5 (mayo de 2003): 38–42. http://dx.doi.org/10.1007/s11837-003-0244-2.

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31

Yang, Hong, He Wang y Dingyue Cao. "Investigation of soldering for crystalline silicon solar cells". Soldering & Surface Mount Technology 28, n.º 4 (5 de septiembre de 2016): 222–26. http://dx.doi.org/10.1108/ssmt-04-2015-0015.

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Purpose Tabbing and stringing are the critical process for crystalline silicon solar module production. Because of the mismatch of the thermal expansion coefficients between silicon and metal, phenomenon of cell bowing, microcracks formation or cell breakage emerge during the soldering process. The purpose of this paper is to investigate the effect of soldering on crystalline silicon solar cells and module, and reveal soldering law so as to decrease the breakage rates and improve reliability for crystalline silicon solar module. Design/methodology/approach A microscopic model of the soldering process is developed by the study of the crystalline silicon solar cell soldering process in this work. And the defects caused by soldering were analyzed systematically. Findings The defects caused by soldering are analyzed systematically. The optimal soldering conditions are derived for the crystalline silicon solar module. Originality/value The quality criterion of soldering for crystalline silicon solar module is built for the first time. The optimal soldering conditions are derived for the crystalline silicon solar module. This study provides insights into solder interconnection reliability in the photovoltaic (PV) industry.

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32

Wenham, S. R., C. B. Honsberg y M. A. Green. "Buried contact silicon solar cells". Solar Energy Materials and Solar Cells 34, n.º 1-4 (septiembre de 1994): 101–10. http://dx.doi.org/10.1016/0927-0248(94)90029-9.

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33

Willeke, G. P. "Thin crystalline silicon solar cells". Solar Energy Materials and Solar Cells 72, n.º 1-4 (abril de 2002): 191–200. http://dx.doi.org/10.1016/s0927-0248(01)00164-7.

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34

Koynov, Svetoslav, Martin S. Brandt y Martin Stutzmann. "Black multi-crystalline silicon solar cells". physica status solidi (RRL) – Rapid Research Letters 1, n.º 2 (marzo de 2007): R53—R55. http://dx.doi.org/10.1002/pssr.200600064.

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35

Glunz, S. W. "High-Efficiency Crystalline Silicon Solar Cells". Advances in OptoElectronics 2007 (28 de agosto de 2007): 1–15. http://dx.doi.org/10.1155/2007/97370.

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The current cost distribution of a crystalline silicon PV module is clearly dominated by material costs, especially by the costs of the silicon wafer. Therefore cell designs that allow the use of thinner wafers and the increase of energy conversion efficiency are of special interest to the PV industry. This article gives an overview of the most critical issues to achieve this aim and of the recent activities at Fraunhofer ISE and other institutes.

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36

Wenham, Stuart. "Buried-contact silicon solar cells". Progress in Photovoltaics: Research and Applications 1, n.º 1 (enero de 1993): 3–10. http://dx.doi.org/10.1002/pip.4670010102.

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37

Zdravkovic, Milos, Aleksandra Vasic, Radovan Radosavljevic, Milos Vujisic y Predrag Osmokrovic. "Influence of radiation on the properties of solar cells". Nuclear Technology and Radiation Protection 26, n.º 2 (2011): 158–63. http://dx.doi.org/10.2298/ntrp1102158z.

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The wide substitution of conventional types of energy by solar energy lies in the rate of developing solar cell technology. Silicon is still the mostly used element for solar cell production, so efforts are directed to the improvement of physical properties of silicon structures. There are several trends in the development of solar cells, but mainly two directions are indicated: the improvement of the conventional solar cell characteristics based on semiconductor materials, and exploring the possibilities of using some new materials. The aim of this paper is to present some different approaches of improvement of solar cell properties through the investigation of radiation effects on the main solar cell characteristics.

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38

Yusoff, A. R. M., M. N. Syahrul y K. Henkel. "Film adhesion in amorphous silicon solar cells". Bulletin of Materials Science 30, n.º 4 (agosto de 2007): 329–31. http://dx.doi.org/10.1007/s12034-007-0054-1.

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39

Bandopadhyay, S., U. Gangopadhyay, K. Mukhopadhyay, H. Saha y A. P. Chatterjee. "Nickel silicide contact for silicon solar cells". Bulletin of Materials Science 15, n.º 5 (agosto de 1992): 473–79. http://dx.doi.org/10.1007/bf02745298.

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40

Li, Deyang, Hans Ågren y Guanying Chen. "Near infrared harvesting dye-sensitized solar cells enabled by rare-earth upconversion materials". Dalton Transactions 47, n.º 26 (2018): 8526–37. http://dx.doi.org/10.1039/c7dt04461e.

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41

Pudasaini, Pushpa Raj y Arturo A. Ayon. "Nanostructured plasmonics silicon solar cells". Microelectronic Engineering 110 (octubre de 2013): 126–31. http://dx.doi.org/10.1016/j.mee.2013.02.104.

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42

Yang, Hong, He Wang y Minqiang Wang. "Investigation of the Relationship between Reverse Current of Crystalline Silicon Solar Cells and Conduction of Bypass Diode". International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/357218.

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In the process of crystalline silicon solar cells production, there exist some solar cells whose reverse current is larger than 1.0 A because of silicon materials and process. If such solar cells are encapsulated into solar modules, hot-spot phenomenon will emerge in use. In this paper, the effect of reverse current on reliability of crystalline silicon solar modules was investigated. Based on the experiments, considering the different shaded rate of cells, the relation between reverse current of crystalline silicon solar cells and conduction of bypass diode was investigated for the first time. To avoid formation of hot spots and failure of solar modules, the reverse current should be smaller than 1.0 A for 125 mm × 125 mm monocrystalline silicon solar cells when the bias voltage is at −12 V.

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43

Yang, Yin Dong, Paul Wu, Jason Deng, Mansoor Barati y Alex McLean. "Developments of Solar Cell Materials and Fabrication Technology and their Effects on Energy Conversion Efficiency". Applied Mechanics and Materials 378 (agosto de 2013): 293–301. http://dx.doi.org/10.4028/www.scientific.net/amm.378.293.

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This paper reviews the present status and future developments of solar cell materials for photovoltaic (PV) application. The solar cell made from different materials, such as silicon with different structures, cadmium telluride (CdTe), gallium arsenide GaAs), copper indium gallium diselenide (CIGS) and polymers are compared in theoretical ability, energy conversion efficiency, production and maintenance costs as well as environmental effects. Several important strategies to improve energy efficiency, such as anti-reflective coating (ARC), multi-junction concentrator and black silicon technique that improve the light-trapping and absorption properties of solar cells, are discussed. The review results show that the most efficient solar cells achieved 50% energy conversion, whereas silicon-based PV cells can reach 27%. Today the market is dominated by crystalline silicon in multi-crystalline and mono-crystalline forms due to it being the second most abundant element on the earths crust, and its nontoxic and environmental-friendly nature compared with other materials. Development of a new process with low cost, high efficiency and environment-friendly nature to produce solar grade silicon is of significant importance for the PV industry.

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Zhu, Xiao Ning, Hong Liang Zhu, De Wei Liu, Yong Guang Huang, Xi Yuan Wang, Hai Juan Yu, Shuai Wang, Xue Chun Lin y Pei De Han. "Picosecond Laser Microstructuring for Black Silicon Solar Cells". Advanced Materials Research 418-420 (diciembre de 2011): 217–21. http://dx.doi.org/10.4028/www.scientific.net/amr.418-420.217.

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Sulfur-doping and broad band absorptive black silicon materials were fabricated by picosecond laser irradiation. Two kinds of microstructures, laser induced periodic surface structure (LIPSS) and conical spikes were obtained by changing parameters of laser scanning. Black silicon solar cells with back surface field were explored. Influences of different rear side structures to devices were presented and conversion efficiency of 9% is available.

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45

Bilyalov, R. R., R. Lüdemann, W. Wettling, L. Stalmans, J. Poortmans, J. Nijs, L. Schirone, G. Sotgiu, S. Strehlke y C. Lévy-Clément. "Multicrystalline silicon solar cells with porous silicon emitter". Solar Energy Materials and Solar Cells 60, n.º 4 (febrero de 2000): 391–420. http://dx.doi.org/10.1016/s0927-0248(99)00102-6.

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Janßen, L., H. Windgassen, D. L. Bätzner, B. Bitnar y H. Neuhaus. "Silicon nitride passivated bifacial Cz-silicon solar cells". Solar Energy Materials and Solar Cells 93, n.º 8 (agosto de 2009): 1435–39. http://dx.doi.org/10.1016/j.solmat.2009.03.015.

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47

MacQueen, Rowan W., Martin Liebhaber, Jens Niederhausen, Mathias Mews, Clemens Gersmann, Sara Jäckle, Klaus Jäger et al. "Crystalline silicon solar cells with tetracene interlayers: the path to silicon-singlet fission heterojunction devices". Materials Horizons 5, n.º 6 (2018): 1065–75. http://dx.doi.org/10.1039/c8mh00853a.

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48

Duan, Jialong, Huihui Zhang, Qunwei Tang, Benlin He y Liangmin Yu. "Recent advances in critical materials for quantum dot-sensitized solar cells: a review". Journal of Materials Chemistry A 3, n.º 34 (2015): 17497–510. http://dx.doi.org/10.1039/c5ta03280f.

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Quantum dot-sensitized solar cells (QDSCs) present promising cost-effective alternatives to conventional silicon solar cells due to their distinctive properties such as simplicity in fabrication, possibility to realize light absorption in wide solar spectrum regions, and theoretical conversion efficiency up to 44%.

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49

WANG, BAOMIN, TONGCHUAN GAO y PAUL W. LEU. "COMPUTATIONAL SIMULATIONS OF NANOSTRUCTURED SOLAR CELLS". Nano LIFE 02, n.º 02 (junio de 2012): 1230007. http://dx.doi.org/10.1142/s1793984411000517.

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Simulation methods are vital to the development of next-generation solar cells such as plasmonic, organic, nanophotonic, and semiconductor nanostructure solar cells. Simulations are predictive of material properties such that they may be used to rapidly screen new materials and understand the physical mechanisms of enhanced performance. They can be used to guide experiments or to help understand results obtained in experiments. In this paper, we review simulation methods for modeling the classical optical and electronic transport properties of nanostructured solar cells. We discuss different techniques for light trapping with an emphasis on silicon nanostructures and silicon thin films integrated with nanophotonics and plasmonics.

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50

Hamakawa, Y., W. Ma y H. Okamoto. "Recent Progress in Amorphous Silicon Solar Cells and Their Technologies". MRS Bulletin 18, n.º 10 (octubre de 1993): 38–41. http://dx.doi.org/10.1557/s0883769400038276.

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A big barrier impeding the expansion of large-scale power generation by photovoltaic (PV) systems was the high price of solar cell modules, which was more than $50/Wp (peak watts) by 1974. Therefore, cost reduction of solar cells is of prime importance. To achieve this objective, tremendous R&D efforts have been made over the past ten years in a wide variety of technical fields, from solar cell materials, cell structure, and mass production processes to photovoltaic systems. As a result, more than an order of magnitude in cost reduction has been achieved, and the module cost has come down to less than $5/Wp in a firm bid for the large-scale market. Two phases of technological innovation can be identified. The first innovation in progress is based on low-cost polycrystalline technologies applicable to well-developed single-crystalline silicon solar cell fabrication processes. The second remarkable innovation is a-Si:H (hydrogenated amorphous silicon) technology, which we will discuss.We open our discussion with a brief overview of the present status of a-Si solar cell R&D efforts, with some new insights in device physics. Next, we discuss some new approaches and key technologies for improving solar cell efficiency with stabilized performance using new materials such as a-SiC:H (amorphous silicon carbide), μc-SiC:H (microcrystalline silicon carbide), and a-SiGe:H (amorphous silicon germanium). Also, the progress of conversion efficiency in various types of amorphous silicon solar cells is surveyed and summarized.

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