Artículos de revistas sobre el tema "Silicide concentration"
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Pretorius, R. y J. W. Mayer. "Silicide formation by concentration controlled phase selection". Journal of Applied Physics 81, n.º 5 (marzo de 1997): 2448–50. http://dx.doi.org/10.1063/1.364252.
Texto completoDe Avillez, R. R., L. A. Clevenger, C. V. Thompson y K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions". Journal of Materials Research 5, n.º 3 (marzo de 1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.
Texto completoHOU, Q. R., Z. M. WANG y Y. J. HE. "THE EFFECT OF OXYGEN ON THE FORMATION OF MANGANESE SILICIDE". Modern Physics Letters B 16, n.º 28n29 (20 de diciembre de 2002): 1135–42. http://dx.doi.org/10.1142/s0217984902004664.
Texto completoNakamura, Kozo y Junsuke Tomioka. "Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers". Solid State Phenomena 108-109 (diciembre de 2005): 103–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.103.
Texto completoVantomme, A., S. Degroote, J. Dekoster, G. Langouche y R. Pretorius. "Concentration-controlled phase selection of silicide formation during reactive deposition". Applied Physics Letters 74, n.º 21 (24 de mayo de 1999): 3137–39. http://dx.doi.org/10.1063/1.124090.
Texto completoShenai, Krishna. "Thermal stability of TiSi2 films on single crystal and polycrystalline silicon". Journal of Materials Research 6, n.º 7 (julio de 1991): 1502–11. http://dx.doi.org/10.1557/jmr.1991.1502.
Texto completoCelano, Umberto, Lennaert Wouters, Alexis Franquet, Valentina Spampinato, Paul van der Heide, Marc Schaekers, Abhijeet Joshi y Bulent M. Basol. "Dopant Activation Depth Profiling for Highly Doped Si:P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)". ECS Transactions 108, n.º 5 (20 de mayo de 2022): 9–15. http://dx.doi.org/10.1149/10805.0009ecst.
Texto completoLiu, Wei-Di, Xiao-Lei Shi, Raza Moshwan, Qiang Sun, Lei Yang, Zhi-Gang Chen y Jin Zou. "Effectively restricting MnSi precipitates for simultaneously enhancing the Seebeck coefficient and electrical conductivity in higher manganese silicide". Journal of Materials Chemistry C 7, n.º 24 (2019): 7212–18. http://dx.doi.org/10.1039/c9tc01937e.
Texto completoTopuria, T., N. D. Browning y Z. Ma. "Characterization of the Source/Drain Region in Mos Devices by Scanning Transmission Electron Microscopy". Microscopy and Microanalysis 7, S2 (agosto de 2001): 210–11. http://dx.doi.org/10.1017/s1431927600027124.
Texto completoСуворова, Е. И., Ф. Ю. Соломкин, Н. А. Архарова, Н. В. Шаренкова y Г. Н. Исаченко. "Микроструктура и фазовый состав сплава дисилицидов железа и хрома". Физика и техника полупроводников 56, n.º 2 (2022): 187. http://dx.doi.org/10.21883/ftp.2022.02.51960.33.
Texto completoLarionov, A. V., K. V. Pikulin, S. V. Zhidovinova y L. Yu Udoeva. "Yttrium effect on the structural-phase state in situ of Mo – 15.3 V – 10.5 Si composite". Perspektivnye Materialy, n.º 7 (2020): 19–28. http://dx.doi.org/10.30791/1028-978x-2020-7-19-28.
Texto completoHofstetter, Jasmin, David P. Fenning, Douglas M. Powell, Ashley E. Morishige y Tonio Buonassisi. "Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions". Solid State Phenomena 205-206 (octubre de 2013): 15–25. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.15.
Texto completoNelson, Jack, Mohammad Ghadyani, Claire Utton y Panos Tsakiropoulos. "A Study of the Effects of Al, Cr, Hf, and Ti Additions on the Microstructure and Oxidation of Nb-24Ti-18Si Silicide Based Alloys". Materials 11, n.º 9 (1 de septiembre de 2018): 1579. http://dx.doi.org/10.3390/ma11091579.
Texto completoHuang, Wei-Jie, Yu-Yang Chen, Hsiu-Ming Hsu y Kuo-Chang Lu. "Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition". Materials 11, n.º 12 (27 de noviembre de 2018): 2384. http://dx.doi.org/10.3390/ma11122384.
Texto completoKitano, Yasuyuki, Koichi Yamamoto, Masashi Wada, Jingtian Yin, Yumio Toda, Koji Tanaka, Eishi Tanabe, Masao Komatsu y Tetsuo Sakai. "Modulated structures in amorphous films of Cr-silicide prepared by electron-beam-deposition". International Journal of Materials Research 97, n.º 3 (1 de marzo de 2006): 310–14. http://dx.doi.org/10.1515/ijmr-2006-0049.
Texto completoSuvorova E. I., Solomkin F. Yu., Arkharova N. A., Sharenkova N. V. y Isachenko G. N. "Microstructure and phase composition of an alloy of iron and chrome disilicides". Semiconductors 56, n.º 2 (2022): 151. http://dx.doi.org/10.21883/sc.2022.02.53041.33.
Texto completoRusskikh, M. A., I. S. Polkovnikov, V. V. Panteleeva y A. B. Shein. "Passivation on manganese monosilicide in sulfuric acid electrolytes". Вестник Пермского университета. Серия «Химия» = Bulletin of Perm University. CHEMISTRY 10, n.º 2 (2020): 221–32. http://dx.doi.org/10.17072/2223-1838-2020-2-221-232.
Texto completode Silva, Milantha, Teruhisa Kawasaki y Shinichiro Kuroki. "Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face". Materials Science Forum 924 (junio de 2018): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.924.409.
Texto completoSidorenko, S. I., S. M. Voloshko, Yu M. Мakogon, O. P. Pavlov, I. E. Kotenko, S. O. Zamulko y S. I. Konorev. "Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)". Defect and Diffusion Forum 344 (octubre de 2013): 79–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.344.79.
Texto completoShadrin, Kirill V., Viktoriya Panteleeva y Anatoly B. Shein. "CORROSION-ELECTROCHEMICAL BEHAVIOR OF IRON DISILICIDE IN SULFURIC ACID ELECTROLYTE". Вестник Пермского университета. Серия «Химия» = Bulletin of Perm University. CHEMISTRY 12, n.º 3 (2022): 148–57. http://dx.doi.org/10.17072/2223-1838-2022-3-148-157.
Texto completoLi, Feitao, Siyao Wan, Dong Wang y Peter Schaaf. "Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches". Beilstein Journal of Nanotechnology 14 (20 de enero de 2023): 133–40. http://dx.doi.org/10.3762/bjnano.14.14.
Texto completoPauleau, Y., F. C. Dassapa, Ph Lami, J. C. Oberlin y F. Romagna. "Silicide formation in metal/Si structures and diffusion barrier properties of CVD tungsten films". Journal of Materials Research 4, n.º 1 (febrero de 1989): 156–62. http://dx.doi.org/10.1557/jmr.1989.0156.
Texto completoChen, Z. X., Z. Fang, Y. Wang, Y. Yang, A. Kamath, X. P. Wang, N. Singh, G. Q. Lo, D. L. Kwong y Y. H. Wu. "Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells". Journal of Electronic Materials 43, n.º 11 (29 de julio de 2014): 4193–98. http://dx.doi.org/10.1007/s11664-014-3309-9.
Texto completoPark, Seran, Hyunsu Shin, Eunjung Ko y Dae‐Hong Ko. "Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films". physica status solidi (a) 216, n.º 10 (24 de enero de 2019): 1800620. http://dx.doi.org/10.1002/pssa.201800620.
Texto completoLarionov, Alexey V., Kirill V. Pikulin, Vladimir M. Chumarev, Lyudmila Y. Udoeva y Leonid A. Smirnov. "Phase composition and microstructure of Mo-Si-V hypoeutectic alloys obtained under non-equilibrium crystallization conditions". Butlerov Communications 57, n.º 1 (31 de enero de 2019): 136–42. http://dx.doi.org/10.37952/roi-jbc-01/19-57-1-136.
Texto completoRosales, I., D. Ponce, MJ Garcia-Ramirez y R. Guardian. "Effect of Chromium Addition on the Cyclic Oxidation Resistance of Pseudo-Binary (Mo,Cr)3 Si Silicide Alloy". High Temperature Materials and Processes 37, n.º 9-10 (25 de octubre de 2018): 943–49. http://dx.doi.org/10.1515/htmp-2017-0099.
Texto completoMuret, P., I. Ali y M. Brunel. "Semiconducting iron silicide thin films on silicon (111) with large Hall mobility and low residual electron concentration". Semiconductor Science and Technology 13, n.º 10 (1 de octubre de 1998): 1170–79. http://dx.doi.org/10.1088/0268-1242/13/10/020.
Texto completoSuwa, Motoo. "Influence of silicon concentration and layering of molybdenum silicide on the reliability of Al–Si–Cu interconnections". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, n.º 3 (mayo de 1991): 1487. http://dx.doi.org/10.1116/1.585454.
Texto completoWidanarto, Wahyu, Farzand Abdullatif, Christoph Senft y Walter Hansch. "Effect of Annealed Si/Ti/Pt Hetero Structure on The Response Time and Signals of Hydrogen Sensors". Indonesian Journal of Physics 22, n.º 1 (3 de noviembre de 2016): 17–21. http://dx.doi.org/10.5614/itb.ijp.2011.22.1.3.
Texto completoLim, Phyllis S. Y., Rinus T. P. Lee, Mantavya Sinha, Dong Zhi Chi y Yee-Chia Yeo. "Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films". Journal of Applied Physics 106, n.º 4 (15 de agosto de 2009): 043703. http://dx.doi.org/10.1063/1.3197144.
Texto completoPanciera, F., K. Hoummada, C. Perrin, M. El Kousseifi, R. Pantel, M. Descoins, M. Gregoire, M. Juhel y D. Mangelinck. "Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation". Microelectronic Engineering 120 (mayo de 2014): 34–40. http://dx.doi.org/10.1016/j.mee.2013.12.016.
Texto completoCuong, Vuong Van, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Satoshi Yasuno, Tomoyuki Koganezawa y Shinichiro Kuroki. "Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC". Materials Science Forum 963 (julio de 2019): 498–501. http://dx.doi.org/10.4028/www.scientific.net/msf.963.498.
Texto completoZanatta, A. R., D. C. Ingram y M. E. Kordesch. "Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases". Journal of Applied Physics 116, n.º 12 (28 de septiembre de 2014): 123508. http://dx.doi.org/10.1063/1.4896589.
Texto completoNandi, K. C., D. Mukherjee, A. K. Biswas y H. N. Acharya. "Optimization of acid concentration, temperature and particle size of magnesium silicide, obtained from rice husk, for the production of silanes". Journal of Materials Science Letters 12, n.º 16 (1993): 1248–50. http://dx.doi.org/10.1007/bf00506325.
Texto completoSuvorova, Veronika, Andrey Nepapushev, Dmitrii Suvorov, Kirill Kuskov, Pavel Loginov y Dmitry Moskovskikh. "Investigation of the Effect of Molybdenum Silicide Addition on the Oxidation Behavior of Hafnium Carbonitride". Journal of Composites Science 7, n.º 1 (10 de enero de 2023): 25. http://dx.doi.org/10.3390/jcs7010025.
Texto completoHadi, Shaikh Mohd Hizami Shaikh Abd, Latiffah Zakaria, Siti Nordahliawate Mohamed Sidique, Murnita Mohmad Mahyudin y Nik Mohd Izham Mohamed Nor. "The potential of soluble silicon for managing white root disease in rubber (Hevea brasiliensis)". October 2021, n.º 15(10):2021 (2 de octubre de 2021): 1346–54. http://dx.doi.org/10.21475/ajcs.21.15.10.p3343.
Texto completoYang, Jian Ping. "Visualization Experimental Study on Organic-Inorganic Crosslinked Plugging System Plugging". Advanced Materials Research 868 (diciembre de 2013): 574–79. http://dx.doi.org/10.4028/www.scientific.net/amr.868.574.
Texto completoLai, Hui Xian, Liu Qing Huang, Ming Fang, Cheng Hao Lu, Juan Chen, De Qin Yu, Jin Tang Li, Wen Hui Ma, Jian Ning Shen y Xue Tao Luo. "Precipitation Phase and Impurities Distribution of Metallurgical Grade Silicon by Vacuum Refining Followed Slag Treatment". Advanced Materials Research 813 (septiembre de 2013): 492–96. http://dx.doi.org/10.4028/www.scientific.net/amr.813.492.
Texto completoHoa, Nguyen Thi, Nguyen Quang Hoc y Hua Xuan Dat. "Study on the Thermodynamic Properties of Thin Film of FCC Interstitial Alloy AuSi at Zero Pressure Using the Statistical Moment Method". Physics 5, n.º 1 (6 de enero de 2023): 59–68. http://dx.doi.org/10.3390/physics5010005.
Texto completoBelov, B., A. Trotsan y O. Vlasova. "Analysis of the structural and chemical state of the duplex – system of silicates – silicides of alkaline earth metals. Message 2. Duplex - system SiO2-MgO-CaO : Si-Mg–Ca". Casting processes 151, n.º 1 (2 de marzo de 2022): 12–19. http://dx.doi.org/10.15407/plit2023.01.012.
Texto completoFathauer, Robert W., Thomas George y W. Thomas Pike. "Columnar and Subsurface Silicide Growth with Novel Molecular Beam Epitaxy Techniques". MRS Proceedings 263 (1992). http://dx.doi.org/10.1557/proc-263-139.
Texto completoJuang, M. H., C. I. Ou-Yang, H. C. Cheng y C. T. Lin. "Improvement of Thin Palladium and Platinum Silicide Films On (100) Si Substrates By Incorporating Phosphorus Dopant". MRS Proceedings 648 (2000). http://dx.doi.org/10.1557/proc-648-p11.32.
Texto completoHoffman, Nathan J., Roger Ketcheson, Daniel Stambaugh, Laura Safran, Richard Campos, Jerry Mase y Daniel Codi. "Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing". MRS Proceedings 1108 (2008). http://dx.doi.org/10.1557/proc-1108-a09-07.
Texto completoBewlay, B. P., P. W. Whiting, A. W. Davis y C. L. Briant. "Creep Mechanisms in Niobium-Silicide Based In-Situ Composites". MRS Proceedings 552 (1998). http://dx.doi.org/10.1557/proc-552-kk6.11.1.
Texto completoBewlay, B. P., M. R. Jackson y H. A. Lipsitt. "Ti-Modified Niobium-Silicide Based Directionally Solidified in-situ Composites". MRS Proceedings 460 (1996). http://dx.doi.org/10.1557/proc-460-715.
Texto completoHerner, S. B., V. Krishnamoorthy, H. G. Robinson y K. S. Jones. "The Effect of Titanium Silicidation on Type II End-of-Range Dislocation Loops". MRS Proceedings 337 (1994). http://dx.doi.org/10.1557/proc-337-469.
Texto completoHong, Q. Z. y J. M. E. Harper. "Temperature Dependence of Ar Sputtering of CoSi2 Thin Films on Si and SiO2". MRS Proceedings 235 (1991). http://dx.doi.org/10.1557/proc-235-319.
Texto completoGalkin, Nickolay G., Dmitrii L. Goroshko, Alexander S. Gouralnik, Sergei A. Dotsenko y Andrei N. Boulatov. "Formation and Electric Properties of Disordered Yb Layers on Si(111)7×7 Surface". MRS Proceedings 770 (2003). http://dx.doi.org/10.1557/proc-770-i3.7.
Texto completoSitaram, A. R. y S. P. Murarka. "Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties". MRS Proceedings 181 (1990). http://dx.doi.org/10.1557/proc-181-185.
Texto completoSitaram, A. R. y S. P. Murarka. "Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties". MRS Proceedings 182 (1990). http://dx.doi.org/10.1557/proc-182-83.
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