Literatura académica sobre el tema "[SiH4 + CO2 + He] plasma"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte las listas temáticas de artículos, libros, tesis, actas de conferencias y otras fuentes académicas sobre el tema "[SiH4 + CO2 + He] plasma".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Artículos de revistas sobre el tema "[SiH4 + CO2 + He] plasma"
Samanta, Arup y Debajyoti Das. "Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4+CO2) plasma at low temperature". Applied Surface Science 259 (octubre de 2012): 477–85. http://dx.doi.org/10.1016/j.apsusc.2012.07.070.
Texto completoSamanta, Arup y Debajyoti Das. "Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD". Solar Energy Materials and Solar Cells 93, n.º 5 (mayo de 2009): 588–96. http://dx.doi.org/10.1016/j.solmat.2008.12.005.
Texto completoSobajima, Yasushi, Shota Kinoshita, Shinnosuke Kakimoto, Ryoji Okumoto, Chitose Sada, Akihisa Matsuda y Hiroaki Okamoto. "Control of growth process for obtaining high-quality a-SiO:H". Canadian Journal of Physics 92, n.º 7/8 (julio de 2014): 582–85. http://dx.doi.org/10.1139/cjp-2013-0558.
Texto completoJo, Sanghyun, Suik Kang, Kyungjun Lee y Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas". Coatings 12, n.º 9 (15 de septiembre de 2022): 1342. http://dx.doi.org/10.3390/coatings12091342.
Texto completoErshov, I. A., V. I. Pustovoy, V. I. Krasovskii, A. N. Orlov, S. I. Rasmagin, L. D. Iskhakova, F. O. Milovich, M. N. Kirichenko, L. L. Chaikov y E. A. Konstantinova. "Synthesis and properties of silicon carbide nanoparticles obtained by laser pyrolysis method". Physics and Chemistry of Materials Treatment 1 (2021): 51–57. http://dx.doi.org/10.30791/0015-3214-2021-1-51-57.
Texto completoPark, Hwanyeol y Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma". Coatings 11, n.º 9 (29 de agosto de 2021): 1041. http://dx.doi.org/10.3390/coatings11091041.
Texto completoJia, Haijun y Michio Kondo. "High rate synthesis of crystalline silicon films from SiH4+He using high density microwave plasma". Journal of Applied Physics 105, n.º 10 (15 de mayo de 2009): 104903. http://dx.doi.org/10.1063/1.3129321.
Texto completoDas, Debajyoti, Madhusudan Jana y A. K. Barua. "Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge". Solar Energy Materials and Solar Cells 63, n.º 3 (julio de 2000): 285–97. http://dx.doi.org/10.1016/s0927-0248(00)00035-0.
Texto completoLee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park y Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition". Journal of The Electrochemical Society 145, n.º 8 (1 de agosto de 1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.
Texto completoDian, J., J. Valenta, J. Hála, A. Poruba, P. Horváth, K. Luterová, I. Gregora y I. Pelant. "Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He". Journal of Applied Physics 86, n.º 3 (agosto de 1999): 1415–19. http://dx.doi.org/10.1063/1.370904.
Texto completoTesis sobre el tema "[SiH4 + CO2 + He] plasma"
Lin, Hsiu-Chi y 林秀錡. "The characteristics of SiH4-H2 plasma with additional He, Ne, Ar gases and their effects on the resultant properties of nc-Si:H thin films". Thesis, 2015. http://ndltd.ncl.edu.tw/handle/em2hmr.
Texto completo明志科技大學
材料工程系碩士班
104
In this study, hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas. Ar, He, and Ne gases were introduced into SiH4/H2 plasma during deposition, with the variation of gas flow rate and SiH4/H2 ratios. During deposition, an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma. The crystalllinity, structure, and Si-H bonding of these Si:H films were investigated using Raman scattering spectroscopy, XRD, and FTIR. The correlations of plasma characteristics and thin film properties were studied. It is found that the crystallinity of nc-Si:H film increases with the introduction of Ar, He, and Ne gases, especially when Ar is added. The plasma density and IH* increase with the increase of the inert gases, most likely due to penning ionization effect. The deposition rate decreases with the inert gases. This might be caused by the enhancement of hydrogen etching.
Actas de conferencias sobre el tema "[SiH4 + CO2 + He] plasma"
Akaishi, Ryushiro, Kouhei Kitazawa, Satoshi Ono, Kazuhiro Gotoh, Eiji Ichihara, Shinya Kato, Noritaka Usami y Yasuyoshi Kurokawa. "Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases". En 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548207.
Texto completoPershin, L. y J. Mostaghimi. "Yttria Deposition by a Novel Plasma Torch". En ITSC2010, editado por B. R. Marple, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima y G. Montavon. DVS Media GmbH, 2010. http://dx.doi.org/10.31399/asm.cp.itsc2010p0038.
Texto completoSankur, Haluk, C. Pritt y Jeffrey G. Nelson. "Plasma luminescence generated in laser evaporation of optical thin-film material". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl2.
Texto completoDecker, Jennifer E., Simon Lagacé, Jean Bérubé, Yves Beaudoin y See Leang Chin. "Stable operation of a powerful 3-Hz line-tunable TEA-CO2 oscillator-amplifier system". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tuqq1.
Texto completo