Artículos de revistas sobre el tema "SiC thin film"
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Nagai, T. y M. Itoh. "SiC thin-film thermistors". IEEE Transactions on Industry Applications 26, n.º 6 (1990): 1139–43. http://dx.doi.org/10.1109/28.62400.
Texto completoNagai, Takeshi, Kazushi Yamamoto y Ikuo Kobayashi. "SiC thin film thermistor". Thin Solid Films 125, n.º 3-4 (marzo de 1985): 355–59. http://dx.doi.org/10.1016/0040-6090(85)90244-5.
Texto completoJiao, Zong Lei y Jian Zhu. "Study of SiC’s Mechanical Property Variance Caused by Film Thickness". Key Engineering Materials 645-646 (mayo de 2015): 400–404. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.400.
Texto completoNutt, S. R. y David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (agosto de 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Texto completoMarsi, Noraini, Majlis Burhanuddin Yeop, Azrul Azlan Hamzah y Faisal Mohd-Yasin. "Growth and Characterization of (100) and (111) 3C-SiC Thin Film for MEMS Capacitive Pressure Sensor for Extreme Environments". Advanced Materials Research 1024 (agosto de 2014): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.356.
Texto completoHeimann, D., T. Wagner, J. Bill, F. Aldinger y F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, n.º 11 (noviembre de 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Texto completoSankin, A. V., V. I. Altukhov y Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties". Key Engineering Materials 909 (4 de febrero de 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.
Texto completoWang, Li, Sima Dimitrijev, Glenn Walker, Ji Sheng Han, Alan Iacopi, Philip Tanner, Leonie Hold, Yu Zhao y Francesca Iacopi. "Color Chart for Thin SiC Films Grown on Si Substrates". Materials Science Forum 740-742 (enero de 2013): 279–82. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.279.
Texto completoČtvrtlík, Radim, Jan Tomastik y Petr Schovánek. "High Temperature Nanoindentation Testing of Amorphous SiC and B4C Thin Films". Defect and Diffusion Forum 368 (julio de 2016): 115–18. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.115.
Texto completoAlisha, P. Chander, V. K. Malik y R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films". Journal of Physics: Conference Series 2518, n.º 1 (1 de junio de 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.
Texto completoJin, C. G., X. M. Wu y L. J. Zhuge. "Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition". Research Letters in Physical Chemistry 2008 (3 de abril de 2008): 1–5. http://dx.doi.org/10.1155/2008/760650.
Texto completoMuhanad A. Ahmed, Mohammed F. Mohammed Sabri y Wathiq R. Abed. "The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition". ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 9, n.º 2 (10 de noviembre de 2021): 46–50. http://dx.doi.org/10.14500/aro.10852.
Texto completoEndrino, Jose L. y James E. Krzanowski. "Nanostructure and mechanical properties of WC–SiC thin films". Journal of Materials Research 17, n.º 12 (diciembre de 2002): 3163–67. http://dx.doi.org/10.1557/jmr.2002.0457.
Texto completoZhao, Chang, Man Zhao, Su Ye Lv, Qing Jun Liu y Guang Jian Xing. "The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers". Solid State Phenomena 295 (agosto de 2019): 93–97. http://dx.doi.org/10.4028/www.scientific.net/ssp.295.93.
Texto completoCheng, Xiankun, Qiang Gao, Kaifeng Li, Zhongliang Liu, Qinzhuang Liu, Qiangchun Liu, Yongxing Zhang y Bing Li. "Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition". Nanomaterials 9, n.º 8 (24 de julio de 2019): 1061. http://dx.doi.org/10.3390/nano9081061.
Texto completoFerro, Gabriel, D. Panknin, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa y J. Stoemenos. "Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy". Materials Science Forum 483-485 (mayo de 2005): 295–98. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.295.
Texto completoDai, Qian, Ruo Run Ma, Qing Rong Feng, Huai Zhang, Qian Qian Yang, Rui Juan Nie y Fu Ren Wang. "Preparing Ultrathin MgB2 Thin Film by Ex Situ Annealing of Mg-B Precursor Film". Materials Science Forum 745-746 (febrero de 2013): 249–54. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.249.
Texto completoLi, Yang Yang, Jun Jie Hao, Xiao Jia Wang, Rui Xin Wang y Zhi Meng Guo. "The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering". Advanced Materials Research 567 (septiembre de 2012): 158–61. http://dx.doi.org/10.4028/www.scientific.net/amr.567.158.
Texto completoWu, Jing, Xiaofeng Zhao, Chunpeng Ai, Zhipeng Yu y Dianzhong Wen. "The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering". International Journal of Modern Physics B 33, n.º 15 (20 de junio de 2019): 1950152. http://dx.doi.org/10.1142/s0217979219501522.
Texto completoPortail, Marc, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski et al. "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth". Crystals 12, n.º 11 (10 de noviembre de 2022): 1605. http://dx.doi.org/10.3390/cryst12111605.
Texto completoChiu, Chien C., Seshu B. Desu, Gang Chen, Ching Yi Tsai y William T. Reynolds. "Deposition of epitaxial β–SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor". Journal of Materials Research 10, n.º 5 (mayo de 1995): 1099–107. http://dx.doi.org/10.1557/jmr.1995.1099.
Texto completoLee, Byung-Teak, Yang-Soo Shin y Jin Hyeok Kim. "High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC". Journal of Materials Research 15, n.º 11 (noviembre de 2000): 2284–87. http://dx.doi.org/10.1557/jmr.2000.0327.
Texto completoEl Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet y F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests". Journal of Materials Research 9, n.º 1 (enero de 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.
Texto completoLoboda, M. J. y M. K. Ferber. "Characterization of the mechanical properties of a–SiC: H films". Journal of Materials Research 8, n.º 11 (noviembre de 1993): 2908–15. http://dx.doi.org/10.1557/jmr.1993.2908.
Texto completoHwang, J. D., Y. K. Fang y T. Y. Tsai. "A vertical submicron SiC thin film transistor". Solid-State Electronics 38, n.º 2 (febrero de 1995): 275–78. http://dx.doi.org/10.1016/0038-1101(94)00120-5.
Texto completoLu, Y. M. y M. H. Hon. "Microstructure in CVD β-SiC thin film". Scripta Metallurgica et Materialia 25, n.º 9 (septiembre de 1991): 2199–201. http://dx.doi.org/10.1016/0956-716x(91)90299-g.
Texto completoSu, Jianing, Ying Yang, Xuhui Zhang, Hao Wang y Longxiang Zhu. "Sulfur passivation of 3C-SiC thin film". Journal of Crystal Growth 505 (enero de 2019): 15–18. http://dx.doi.org/10.1016/j.jcrysgro.2018.09.025.
Texto completoThompson, Margarita P., Andrew R. Drews, Changhe Huang y Gregory W. Auner. "Temperature Effect on the Quality of A1N thin Films". MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 142–48. http://dx.doi.org/10.1557/s1092578300002362.
Texto completoKong, H. S., Y. C. Wang, J. T. Glass y R. F. Davis. "The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films". Journal of Materials Research 3, n.º 3 (junio de 1988): 521–30. http://dx.doi.org/10.1557/jmr.1988.0521.
Texto completoAlbert Alim, Emilly, Muhammad Firdaus Omar y Abd Khamim Ismail. "Luminescent Properties of SiC Thin Film Deposited by VHF-PECVD: Effect of Methane Flow Rate". Solid State Phenomena 268 (octubre de 2017): 239–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.268.239.
Texto completoChaudhuri, J., R. Thokala, J. H. Edgar y B. S. Sywe. "Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy". Advances in X-ray Analysis 39 (1995): 645–51. http://dx.doi.org/10.1154/s0376030800023077.
Texto completoVladoiu, Rodica, Aurelia Mandes, Mirela Contulov, Virginia Dinca y Corneliu Porosnicu. "Investigation of Composition-Properties’ Relations on Silicon and Carbon Based Nanomaterials". Advanced Materials Research 816-817 (septiembre de 2013): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amr.816-817.232.
Texto completoLee, B.-T., D.-K. Kim, C.-K. Moon, J. K. Kim, Y. H. Seo, K. S. Nahm, H. J. Lee et al. "Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors". Journal of Materials Research 14, n.º 1 (enero de 1999): 24–28. http://dx.doi.org/10.1557/jmr.1999.0006.
Texto completoMishra, Pratima K. y Bijayalaxmi Sahoo. "Growth of amorphous carbon and graphene on pulse laser deposited SiC films and their characterization studies". Laser and Particle Beams 31, n.º 1 (12 de diciembre de 2012): 63–71. http://dx.doi.org/10.1017/s0263034612000894.
Texto completoGalashev, Alexander y Ksenia Abramova. "Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method". Materials 16, n.º 8 (15 de abril de 2023): 3115. http://dx.doi.org/10.3390/ma16083115.
Texto completoSano, Hideaki, Hajime Karasuyama, Guo Bin Zheng y Yasuo Uchiyama. "Kinetics of the SiC Formation from Carbon Thin Film and SiO Gas". Materials Science Forum 510-511 (marzo de 2006): 930–33. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.930.
Texto completoBeshkova, M., B. S. Blagoev, V. Mehandzhiev, R. Yakimova, B. Georgieva, I. Avramova, P. Terziyska y V. Strijkova. "Morphological evolution of thin AlN films grown by atomic layer deposition". Journal of Physics: Conference Series 2240, n.º 1 (1 de marzo de 2022): 012005. http://dx.doi.org/10.1088/1742-6596/2240/1/012005.
Texto completoSugawara, Y., N. Shibata, S. Hara y Y. Ikuhara. "Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate". Journal of Materials Research 15, n.º 10 (octubre de 2000): 2121–24. http://dx.doi.org/10.1557/jmr.2000.0305.
Texto completoGordienko, S. O., A. Nazarov, A. V. Rusavsky, A. V. Vasin, N. Rymarenko, V. G. Stepanov, T. M. Nazarova y V. S. Lysenko. "Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures". Advanced Materials Research 276 (julio de 2011): 21–25. http://dx.doi.org/10.4028/www.scientific.net/amr.276.21.
Texto completoBaskurt, Erdem, Tolga Tavşanoğlu y Yücel Onüralp. "Effect of Methane Flow Rate on the Microstructural and Mechanical Properties of Silicon Carbide Thin Films Deposited by Reactive DC Magnetron Sputtering". Advances in Science and Technology 66 (octubre de 2010): 35–40. http://dx.doi.org/10.4028/www.scientific.net/ast.66.35.
Texto completoTanaka, Shun Ichiro y Chihiro Iwamoto. "Nanoscale Dynamics at Reactive Wetting Front on SiC". Materials Science Forum 502 (diciembre de 2005): 269–74. http://dx.doi.org/10.4028/www.scientific.net/msf.502.269.
Texto completoMoon, C. K., H. J. Song, J. K. Kim, J. H. Park, S. J. Jang, J.-B. Yoo, H.-R. Park y Byung-Teak Lee. "Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers". Journal of Materials Research 16, n.º 1 (enero de 2001): 24–27. http://dx.doi.org/10.1557/jmr.2001.0007.
Texto completoTrinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh y G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC". Solid State Phenomena 99-100 (julio de 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.
Texto completoKimura, Yutaroh, Xia Zhu, Hiromichi Toyota, Ryoya Shiraishi, Yukiharu Iwamoto y Shinfuku Nomura. "Effect of Amorphous Silicon Carbide Interlayer on Diamond-Like Carbon Film Structure and Film Hardness". Key Engineering Materials 825 (octubre de 2019): 99–105. http://dx.doi.org/10.4028/www.scientific.net/kem.825.99.
Texto completoChung, Gwiy-Sang y Jeong-Hak Ahn. "Electrical characteristics of polycrystalline 3C-SiC thin film diodes". Journal of Sensor Science and Technology 16, n.º 4 (31 de julio de 2007): 259–62. http://dx.doi.org/10.5369/jsst.2007.16.4.259.
Texto completoOh, Chulmin, Shijo Nagao, Tohru Sugahara y Katsuaki Suganuma. "Pressureless Ag Thin-Film Die-Attach for SiC Devices". Materials Science Forum 821-823 (junio de 2015): 919–22. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.919.
Texto completoYi, Jian, XiaoDong He, Yue Sun y Yao Li. "Optical properties of SIC/SIO2 composite thin film". Microwave and Optical Technology Letters 49, n.º 7 (2007): 1551–53. http://dx.doi.org/10.1002/mop.22487.
Texto completoGeffroy, Pierre Marie, Jean François Silvain y Thierry Chartier. "Elaboration by Tape Casting and Hot Rolling of Copper/Silicon Carbide Composite Thin Films for Microelectronic Applications". Materials Science Forum 534-536 (enero de 2007): 881–84. http://dx.doi.org/10.4028/www.scientific.net/msf.534-536.881.
Texto completoAnzalone, Ruggero, Massimo Camarda, Andrea Severino, Nicolo’ Piluso y Francesco La Via. "Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition". Materials Science Forum 778-780 (febrero de 2014): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.255.
Texto completoZhao, Yong Mei, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li y Yi Ping Zeng. "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer". Materials Science Forum 600-603 (septiembre de 2008): 251–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.251.
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