Artículos de revistas sobre el tema "SiC SBD"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte los 50 mejores artículos de revistas para su investigación sobre el tema "SiC SBD".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.
Nakanishi, Yosuke, Takaaki Tominaga, Hiroaki Okabe, Yoshiyuki Suehiro, Kazuyuki Sugahara, Takeharu Kuroiwa, Yoshihiko Toyoda et al. "Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate". Materials Science Forum 778-780 (febrero de 2014): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.820.
Texto completoShilpa, A., S. Singh y N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors". Journal of Instrumentation 17, n.º 11 (1 de noviembre de 2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.
Texto completoTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa y Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD". Materials Science Forum 1004 (julio de 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.
Texto completoKinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura y Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height". Materials Science Forum 645-648 (abril de 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.
Texto completoKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang y Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance". Journal of Semiconductors 44, n.º 5 (1 de mayo de 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Texto completoTezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda y Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices". Materials Science Forum 717-720 (mayo de 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.
Texto completoKinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo y Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing". Materials Science Forum 556-557 (septiembre de 2007): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.877.
Texto completoHatakeyama, Tetsuo, Johji Nishio y Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)". Materials Science Forum 483-485 (mayo de 2005): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.921.
Texto completoYuan, Hao, Xiao Yan Tang, Yi Men Zhang, Yu Ming Zhang, Hong Liang Lv, Yue Hu Wang, Yu Fei Zhou y Qing Wen Song. "The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)". Materials Science Forum 778-780 (febrero de 2014): 812–15. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.812.
Texto completoZiko, Mehadi Hasan, Ants Koel, Toomas Rang y Muhammad Haroon Rashid. "Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding". Crystals 10, n.º 8 (23 de julio de 2020): 636. http://dx.doi.org/10.3390/cryst10080636.
Texto completoHarada, Shinsuke, Yasuyuki Hoshi, Yuichi Harada, Takashi Tsuji, Akimasa Kinoshita, Mitsuo Okamoto, Youichi Makifuchi et al. "High Performance SiC IEMOSFET/SBD Module". Materials Science Forum 717-720 (mayo de 2012): 1053–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1053.
Texto completoCheng, Hongyu, Wenmao Li, Peiran Wang, Jianguo Chen, Qing Wang y Hongyu Yu. "A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)". Crystals 13, n.º 4 (10 de abril de 2023): 650. http://dx.doi.org/10.3390/cryst13040650.
Texto completoKawahara, Koutarou, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa y Satoshi Yamakawa. "Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs". Materials Science Forum 924 (junio de 2018): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.924.663.
Texto completoTomita, Masaaki, Yusuke Maeyama, M. Sato, Y. Fukuda, F. Honma, J. Ono, Masaaki Shimizu y Hiroaki Iwakuro. "Device Simulation Model for Transient Analysis of SiC-SBD". Materials Science Forum 600-603 (septiembre de 2008): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.975.
Texto completoKim, S. J., Y. S. Choi, S. J. Yu, Sang Cheol Kim, Wook Bahng y K. H. Lee. "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination". Materials Science Forum 556-557 (septiembre de 2007): 861–64. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.861.
Texto completoHino, Shiro, Hideyuki Hatta, Koji Sadamatsu, Yuichi Nagahisa, Shigehisa Yamamoto, Toshiaki Iwamatsu, Yasuki Yamamoto, Masayuki Imaizumi, Shuhei Nakata y Satoshi Yamakawa. "Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode". Materials Science Forum 897 (mayo de 2017): 477–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.477.
Texto completoKinoshita, Akimasa, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura y Kazuo Arai. "Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure". Materials Science Forum 615-617 (marzo de 2009): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.643.
Texto completoImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami y Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules". Materials Science Forum 527-529 (octubre de 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Texto completoCha, Kyuhyun y Kwangsoo Kim. "Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications". Energies 14, n.º 21 (4 de noviembre de 2021): 7305. http://dx.doi.org/10.3390/en14217305.
Texto completoKyoung, Sin Su, Eun Sik Jung, Tai Young Kang, Chang Heon Yang y Man Young Sung. "A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode". Materials Science Forum 821-823 (junio de 2015): 588–91. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.588.
Texto completoNishikawa, Koichi, Yusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato y Hiroaki Iwakuro. "Reverse Biased Electrochemical Etching of SiC-SBD". Materials Science Forum 556-557 (septiembre de 2007): 419–22. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.419.
Texto completoHayashi, Tetsuya, Hideaki Tanaka, Yoshio Shimoida, Satoshi Tanimoto y Masakatsu Hoshi. "New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode". Materials Science Forum 483-485 (mayo de 2005): 953–56. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.953.
Texto completoSato, Shinji, Fumiki Kato, Hiroshi Hozoji, Hiroshi Sato, Hiroshi Yamaguchi y Shinsuke Harada. "High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET". Materials Science Forum 1004 (julio de 2020): 1115–22. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1115.
Texto completoKim, S. J., S. Kim, Sang Cheol Kim, In Ho Kang, K. H. Lee y T. Matsuoka. "FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD". Materials Science Forum 556-557 (septiembre de 2007): 869–72. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.869.
Texto completoDraghici, Florin, Gheorghe Brezeanu, Ion Rusu, Florin Bernea y Phillippe Godignon. "High Temperature SiC Sensor with an Isolated Package". Materials Science Forum 740-742 (enero de 2013): 1002–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1002.
Texto completoHafez, Alaa El-Din Sayed y Mohamed Abd El-Latif. "Optimum Barrier Height for SiC Schottky Barrier Diode". ISRN Electronics 2013 (31 de julio de 2013): 1–5. http://dx.doi.org/10.1155/2013/528094.
Texto completoMakino, Takahiro, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida y Takeshi Ohshima. "Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes". Materials Science Forum 821-823 (junio de 2015): 575–78. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.575.
Texto completoHatakeyama, Tetsuo, Chiharu Ota, Johji Nishio y Takashi Shinohe. "Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices". Materials Science Forum 527-529 (octubre de 2006): 1179–82. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1179.
Texto completoKinoshita, Akimasa, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura y Kazuo Arai. "Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode". Materials Science Forum 600-603 (septiembre de 2008): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.643.
Texto completoShimbori, Atsushi y Alex Q. Huang. "Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer". Applied Physics Letters 120, n.º 12 (21 de marzo de 2022): 122103. http://dx.doi.org/10.1063/5.0081106.
Texto completoOkino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama y Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes". Materials Science Forum 740-742 (enero de 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.
Texto completoTominaga, Takaaki, Naoyuki Kawabata, Akihiro Koyama, Takanori Tanaka, Hiroshi Watanabe, Nobuyuki Tomita, Naruhisa Miura, Takeharu Kuroiwa y Satoshi Yamakawa. "Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach". Materials Science Forum 858 (mayo de 2016): 765–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.765.
Texto completoWATANABE, Yukihiko, Takashi KATSUNO, Tsuyoshi ISHIKAWA, Hirokazu FUJIWARA y Toshimasa YAMAMOTO. "Relationship between Characteristics of SiC-SBD and Surface Defect". Hyomen Kagaku 35, n.º 2 (2014): 84–89. http://dx.doi.org/10.1380/jsssj.35.84.
Texto completoFurno, M., F. Bonani, G. Ghione, Sergio Ferrero, Samuele Porro, P. Mandracci, Luciano Scaltrito, G. Richieri, Denis Perrone y Luigi Merlin. "Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes". Materials Science Forum 483-485 (mayo de 2005): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.941.
Texto completoSong, Ho Keun, Jong Ho Lee, Myeong Sook Oh, Jeong Hyun Moon, Han Seok Seo, Jeong Hyuk Yim, Sun Young Kwon y Hyeong Joon Kim. "Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor". Materials Science Forum 600-603 (septiembre de 2008): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.971.
Texto completoWang, Xi, Yiwen Zhong, Hongbin Pu, Jichao Hu, Xianfeng Feng y Guowen Yang. "Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip". Journal of Semiconductors 42, n.º 11 (1 de noviembre de 2021): 112802. http://dx.doi.org/10.1088/1674-4926/42/11/112802.
Texto completoZhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men y Zhang Yu-Ming. "Gamma-ray radiation effect on Ni/4H-SiC SBD". Acta Physica Sinica 58, n.º 4 (2009): 2737. http://dx.doi.org/10.7498/aps.58.2737.
Texto completoYang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen y Ren Li-Li. "Characteristics of a SiC SBD with semi-superjunction structure". Acta Physica Sinica 59, n.º 1 (2010): 566. http://dx.doi.org/10.7498/aps.59.566.
Texto completoKato, Fumiki, Fengqun Lang, Simanjorang Rejeki, Hiroshi Nakagawa, Hiroshi Yamaguchi y Hiroshi Sato. "Precise Chip Joint Method with Sub-micron Au Particle for High-density SiC Power Module Operating at High Temperature". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (1 de enero de 2013): 000254–59. http://dx.doi.org/10.4071/hiten-wa17.
Texto completoOta, Chiharu, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa y Hiromichi Ohashi. "Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)". Materials Science Forum 556-557 (septiembre de 2007): 881–84. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.881.
Texto completoLiu, Ao, Yong Hong Tao, Song Bai, Gang Chen, Ling Wang, Run Hua Huang, Yun Li y Zhi Fei Zhao. "Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode". Applied Mechanics and Materials 713-715 (enero de 2015): 1034–37. http://dx.doi.org/10.4028/www.scientific.net/amm.713-715.1034.
Texto completoNagao, Shijo, Takuo Sugioka, Satoshi Ogawa, Teruhisa Fujibayashi, Zhang Hao y Katsuaki Suganuma. "High Thermal Stability of SiC Packaging with Sintered Ag Paste Die-attach combined with Imide-based Molding". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000349–52. http://dx.doi.org/10.4071/isom-2015-wp15.
Texto completoKato, Tomohisa, Akimasa Kinoshita, Keisuke Wada, Takashi Nishi, Eiji Hozomi, Hiroyoshi Taniguchi, Kenji Fukuda y Hajime Okumura. "Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique". Materials Science Forum 645-648 (abril de 2010): 763–65. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.763.
Texto completoGao, Rongyu, Hongyu Cheng, Wenmao Li, Chenkai Deng, Jianguo Chen, Qing Wang y Hongyu Yu. "A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars". Crystals 12, n.º 7 (28 de junio de 2022): 916. http://dx.doi.org/10.3390/cryst12070916.
Texto completoBernat, Robert, Ivana Capan, Luka Bakrač, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima, Željko Pastuović y Adam Sarbutt. "Response of 4H-SiC Detectors to Ionizing Particles". Crystals 11, n.º 1 (24 de diciembre de 2020): 10. http://dx.doi.org/10.3390/cryst11010010.
Texto completoIvanov, Pavel A. y Igor V. Grekhov. "Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction". Materials Science Forum 600-603 (septiembre de 2008): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.955.
Texto completoKitabatake, Makoto, M. Tagome, S. Kazama, K. Yamashita, K. Hashimoto, Kunimasa Takahashi, O. Kusumoto et al. "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter". Materials Science Forum 600-603 (septiembre de 2008): 913–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.913.
Texto completoFujimoto, Keiya, Hiroaki Hanafusa, Takuma Sato y Seiichiro Higashi. "Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging". Applied Physics Express 15, n.º 2 (25 de enero de 2022): 026502. http://dx.doi.org/10.35848/1882-0786/ac4a10.
Texto completoNomura, Yuki, Tsuyoshi Funaki, Toshio Hanada y Takashi Nakamura. "Voltage Distribution in Ultra High Voltage SBD Modules with Directly Stacked SiC SBD Bare Chips in Series". IEEJ Transactions on Industry Applications 141, n.º 8 (1 de agosto de 2021): 646–53. http://dx.doi.org/10.1541/ieejias.141.646.
Texto completoBerthou, Maxime, Besar Asllani, Pierre Brosselard y Philippe Godignon. "Cryogenic to High Temperature Exploration of 4H-SiC W-SBD". Materials Science Forum 821-823 (junio de 2015): 583–87. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.583.
Texto completo