Artículos de revistas sobre el tema "SiC power MOSFET"
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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen y John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, n.º 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Texto completoLi, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs". Applied and Computational Engineering 49, n.º 1 (22 de marzo de 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
Texto completoHsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu y Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>". Key Engineering Materials 948 (6 de junio de 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
Texto completoFunaki, Tsuyoshi, Yuki Nakano y Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation". Materials Science Forum 717-720 (mayo de 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Texto completoKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang y Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance". Journal of Semiconductors 44, n.º 5 (1 de mayo de 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Texto completovan Zeghbroeck, Bart y Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs". Materials Science Forum 924 (junio de 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
Texto completoQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang y Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET". Journal of Physics: Conference Series 2125, n.º 1 (1 de noviembre de 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Texto completoMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre y Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules". Materials Science Forum 645-648 (abril de 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Texto completoGreen, Ronald, Aivars J. Lelis y Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing". Materials Science Forum 717-720 (mayo de 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Texto completoHan, Ki Jeong, B. Jayant Baliga y Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results". Materials Science Forum 924 (junio de 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
Texto completoLangpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee y Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET". Crystals 12, n.º 2 (11 de febrero de 2022): 245. http://dx.doi.org/10.3390/cryst12020245.
Texto completoXu, Yige. "Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review". Applied and Computational Engineering 40, n.º 1 (21 de febrero de 2024): 180–86. http://dx.doi.org/10.54254/2755-2721/40/20230647.
Texto completoYang, Dong, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca y Qing Tai Zhao. "Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs". Key Engineering Materials 945 (19 de mayo de 2023): 77–82. http://dx.doi.org/10.4028/p-0ta22r.
Texto completoMüting, Johanna, Bhagyalakshmi Kakarla y Ulrike Grossner. "Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD". Materials Science Forum 897 (mayo de 2017): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.897.553.
Texto completoLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen y John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout". Materials Science Forum 924 (junio de 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Texto completoKampitsis, Georgios E., Stavros A. Papathanassiou y Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits". Materials Science Forum 856 (mayo de 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.
Texto completoGrome, Christopher A. y Wei Ji. "A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs". Electronics 13, n.º 8 (9 de abril de 2024): 1414. http://dx.doi.org/10.3390/electronics13081414.
Texto completoXie, Li Jun, Jin Yuan Li y Kun Shan Yu. "Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET". Applied Mechanics and Materials 672-674 (octubre de 2014): 906–13. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.906.
Texto completoChe, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET". Theoretical and Natural Science 5, n.º 1 (25 de mayo de 2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.
Texto completoDevadas, Shree Chakravarthy y Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs". Platform : A Journal of Engineering 5, n.º 2 (30 de junio de 2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.
Texto completoUmegami, Hirokatsu, Toshikazu Harada y Ken Nakahara. "Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC". World Electric Vehicle Journal 14, n.º 4 (17 de abril de 2023): 112. http://dx.doi.org/10.3390/wevj14040112.
Texto completoSato, Shinji, Fumiki Kato, Hidekazu Tanisawa, Kenichi Koui, Kinuyo Watanabe, Yoshinori Murakami, Yusuke Kobayashi, Hiroshi Sato, Hiroshi Yamaguchi y Shinsuke Harada. "Development of a High-Speed Switching Silicon Carbide Power Module". Materials Science Forum 963 (julio de 2019): 864–68. http://dx.doi.org/10.4028/www.scientific.net/msf.963.864.
Texto completoHebali, Mourad, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi y Abdelkader Saidane. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model". Journal of Electrical Engineering 70, n.º 2 (1 de abril de 2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.
Texto completoKannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong y Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs". International Journal of Electrical and Computer Engineering (IJECE) 9, n.º 2 (1 de abril de 2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.
Texto completoAtaseven, Ismail, Ilker Sahin y Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar". Energies 16, n.º 6 (21 de marzo de 2023): 2903. http://dx.doi.org/10.3390/en16062903.
Texto completoLi, Jinyuan, Meiting Cui, Yujie Du, Junji Ke y Zhibin Zhao. "Influence of Parasitic Inductances on Switching Performance of SiC MOSFET". E3S Web of Conferences 64 (2018): 04005. http://dx.doi.org/10.1051/e3sconf/20186404005.
Texto completoZhang, Liqi, Suxuan Guo, Pengkun Liu y Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module". International Symposium on Microelectronics 2017, n.º 1 (1 de octubre de 2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.
Texto completoRace, Salvatore, Ivana Kovacevic-Badstubner, Roger Stark, Alexander Tsibizov, Manuel Belanche, Yulieth Arango, Gianpaolo Romano, Lars Knoll y Ulrike Grossner. "Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs". Materials Science Forum 1091 (5 de junio de 2023): 67–71. http://dx.doi.org/10.4028/p-2388hx.
Texto completoZhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver". Highlights in Science, Engineering and Technology 56 (14 de julio de 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.
Texto completoPrado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori y José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications". Energies 15, n.º 14 (20 de julio de 2022): 5244. http://dx.doi.org/10.3390/en15145244.
Texto completoImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami y Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules". Materials Science Forum 527-529 (octubre de 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Texto completoZhu, Shengnan, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan y Anant K. Agarwal. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching". Materials 15, n.º 19 (27 de septiembre de 2022): 6690. http://dx.doi.org/10.3390/ma15196690.
Texto completoVobecký, Jan. "The current status of power semiconductors". Facta universitatis - series: Electronics and Energetics 28, n.º 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Texto completoMatocha, Kevin, Sujit Banerjee y Kiran Chatty. "Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers". Materials Science Forum 858 (mayo de 2016): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.858.803.
Texto completoAn, Yiping, Yifan Wang, Yujin Wu y Jiazhen Yang. "Conduction Mechanism and Influencing Factors of SiC MOSFET". Journal of Physics: Conference Series 2435, n.º 1 (1 de febrero de 2023): 012021. http://dx.doi.org/10.1088/1742-6596/2435/1/012021.
Texto completoLuo, Qixiao. "Research on the advantages and development status of new material MOSFET". Highlights in Science, Engineering and Technology 33 (21 de febrero de 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.
Texto completoOkabe, Hiroaki, Motoru Yoshida, Takaaki Tominaga, Jun Fujita, Kazuyo Endo, Yoshinori Yokoyama, Kazuyasu Nishikawa, Yoshihiko Toyoda y Satoshi Yamakawa. "High Temperature Reliability of the SiC-MOSFET with Copper Metallization". Materials Science Forum 778-780 (febrero de 2014): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.955.
Texto completoPeters, Dethard, Reinhold Schörner, Peter Friedrichs y Dietrich Stephani. "SiC Power MOSFETs – Status, Trends and Challenges". Materials Science Forum 527-529 (octubre de 2006): 1255–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1255.
Texto completoMatacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio y Santolo Daliento. "Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations". Materials Science Forum 1004 (julio de 2020): 608–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.608.
Texto completoHarada, Shinsuke, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda y Kazuo Arai. "Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face". Materials Science Forum 600-603 (septiembre de 2008): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.675.
Texto completoZhang, Q. J., G. Wang, Charlotte Jonas, Craig Capell, Steve Pickle, P. Butler, Daniel J. Lichtenwalner et al. "Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed". Materials Science Forum 897 (mayo de 2017): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.897.521.
Texto completoMatacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio y Santolo Daliento. "Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs". Materials Science Forum 1062 (31 de mayo de 2022): 669–75. http://dx.doi.org/10.4028/p-bzki64.
Texto completoDhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides y Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide". MRS Bulletin 30, n.º 4 (abril de 2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.
Texto completoAlbrecht, Matthaeus, Tobias Erlbacher, Anton Bauer y Lothar Frey. "Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation". Materials Science Forum 963 (julio de 2019): 827–31. http://dx.doi.org/10.4028/www.scientific.net/msf.963.827.
Texto completoTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa y Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD". Materials Science Forum 1004 (julio de 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.
Texto completoHoffmann, Felix, Stefan Schmitt y Nando Kaminski. "Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules". Materials Science Forum 1062 (31 de mayo de 2022): 487–92. http://dx.doi.org/10.4028/p-7j50kd.
Texto completoFeng, Haonan, Sheng Yang, Xiaowen Liang, Dan Zhang, Xiaojuan Pu, Xu Cui, Haiyang Wang, Jing Sun, Xuefeng Yu y Qi Guo. "Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs". Journal of Nanoelectronics and Optoelectronics 16, n.º 9 (1 de septiembre de 2021): 1423–29. http://dx.doi.org/10.1166/jno.2021.3088.
Texto completoZhao, Zhiqin y Xiaoqiong He. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation". Energies 13, n.º 1 (20 de diciembre de 2019): 51. http://dx.doi.org/10.3390/en13010051.
Texto completoChen, Zheng, Yiying Yao, Wenli Zhang, Dushan Boroyevich, Khai Ngo, Paolo Mattavelli y Rolando Burgos. "Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications". Journal of Microelectronics and Electronic Packaging 13, n.º 2 (1 de abril de 2016): 39–50. http://dx.doi.org/10.4071/imaps.503.
Texto completoWu, Zhaohui, Kangping Chen y Bin Li. "A High Crosstalk Suppression SiC MOSFET Gate Driver". Journal of Physics: Conference Series 2584, n.º 1 (1 de septiembre de 2023): 012071. http://dx.doi.org/10.1088/1742-6596/2584/1/012071.
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