Tesis sobre el tema "SiC power MOSFET"
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Linewih, Handoko y h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET". Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.
Texto completoLinewih, Handoko. "Design and Application of SiC Power MOSFET". Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.
Texto completoThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
Full Text
Chen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.
Texto completoMy PhD work in laboratories SATIE of ENS de Cachan and Ampère of INSA de Lyon is a part of project GEstioN OptiMisée de l’Energie (GENOME) to investigate the potential of some Silicon carbide (SiC) power devices (JFET, MOSFET and BJT) in power electronic converters dedicated to aeronautical applications for the development of more electric aircraft.The first part of my work investigates the robustness of MOSFET and SiC BJT subjected to short circuit. For SiC MOSFETs, under repetition of short-term short circuit, a gate leakage current seems to be an indicator of aging. We define repetitive critical energy to evaluate the robustness for repetition of short circuit. The effect of room temperature on the robustness of SiC MOSFET and BJT under short circuit stress is not evident. The capability of short circuit is not improved by reducing gate leakage current for MOSFET, while BJT shows a better robustness by limiting base current. For MSOFET, a significant increase in gate leakage current accelerates failure for DC voltage from 600V to 750V. After opening Rohm MOSFETs with a short circuit between gate and source after failure, the fusion of metallization is considered as the raison of failure. In this particular mode of failure, the short circuit between gate and source self-protects the chip and opens drain short current.The second part of the thesis is devoted to the study of SiC JFET, MSOFET and BJT in avalanche mode. The SemiSouth JFET and Fairchild BJT exhibit excellent robustness in the avalanche. On the contrary, the avalanche test reveals the fragility of Rohm MOSFET since it failed before entering avalanche mode. The failure of Rohm MOSFET and its low robustness in avalanche mode are related to the activation of parasitic bipolar transistor. The avalanche current is a very small part of the current in the inductor. It flows from the drain/collector to the gate/base to drive the transistor in linear mode. A high-value gate resistance effectively reduces the avalanche current through the drain-gate junction to the JFET.The third part of this thesis concerns the study of switching performance of SiC BJT at high switching frequency. We initially attempted to validate the switching loss measurements. After checking the accuracy of the electrical measurement compared to calorimetric measurement, electrical measurement is adopted for switching power losses but requires a lot of attention. Thanks to high carrier charge mobility of SiC material, SiC BJT does not require the use of anti-saturation diode. Finally, no significant variation in switching losses is observed over an ambient temperature range from 25°C to 200°C.The fourth part focuses on the study of SiC MOSFET behavior under HTB (High Temperature Reverse Bias) and in diode-less application in which the transistors conduct a reverse current through the channel, except for the dead time during which the body diode ensure the continuity of the current in the load. The results show that the body diode has no significant degradation when the reverse conduction of the MOSFET. Cree MOSFET under test shows a drift of the threshold voltage and a degradation of the gate oxide which are more significant during the tests in the diode-less application than under HTRB test. The drift of the threshold voltage is probably due to intense electric field in the oxide and the charge traps in the gate oxide
Rajagopal, Narayanan. "Design of 1.7 kV SiC MOSFET Switching-Cells for Integrated Power Electronics Building Block (iPEBB)". Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104148.
Texto completoM.S.
This thesis presents the design of an integrated power electronics building block (iPEBB) for high-density systems. The PEBB concept allows for modular converters that can perform various power conversions. The design begins with exploring state-of-the-art substrates that will serve as the foundation for the iPEBB. Due to the integrated design, the substrate plays a vital role in the thermal, electrical, and mechanical performance, and contributes to the weight and reliability of the iPEBB. State-of-the-art organic direct-bonded copper (ODBC) substrates and multi-layer silicon nitride substrates are explored in this work. The ODBC is used to develop a common substrate for the converter, which allows for a high level of integration between different SiC half-bridges. Switching-cell prototypes based on the ODBC and multi-layer silicon nitride are fabricated to provide insight into the electrical and thermal performance of different substrates. This information will aid in the further redesign and refinement of the iPEBB concept.
Soler, Victor. "Design and process developments towards an optimal 6.5 kV SiC power MOSFET". Doctoral thesis, Universitat Politècnica de Catalunya, 2019. http://hdl.handle.net/10803/668916.
Texto completoUn futur sostenible requereix convertidors electrònics d'alta potència eficients per totes les fases del consum d'energia elèctrica. El carbur de silici (SiC) és un dels semiconductors de banda prohibida ampla més avançats que permet superar els límits de silici en dispositius de potència. El gran interès en els MOSFETs de potència SiC recau en que són interruptors unipolars que presenten una alta capacitat de tensió de bloqueig i una resistència específica relativament baixa. L’objectiu d’aquesta tesi és la optimització del disseny i el perfeccionament de la tecnologia de processos per a la millora dels MOSFETs d’alta tensió SiC tenint com a referencia els desenvolupaments previs realitzats pel grup. Els resultats d'aquesta investigació han permès la fabricació de MOSFETs de potència de SiC d’àrea gran amb capacitat de bloqueig des de 1,7 kV fins a 6,5 kV. Les inherents propietats del SiC requereixen solucions tecnològiques específiques per a integrar amb èxit un MOSFET de potència de tensió tan elevada. Per garantir una bona capacitat de bloqueig, s'han dissenyat diferents estructures de terminació planars, optimitzades per simulació i implementades sobre díodes PiN. Els esquemes de terminació considerats son JTE mono-zona, FGR i una nova estructura RA-JTE que combina una JTE amb anells flotants. La terminació RA-JTE, amb una menor sensibilitat a desviacions del procés de fabricació i menor àrea consumida, ha aconseguit més del 90% de la tensió ideal i bona capacitat de bloqueig per dispositius de fins a 6,5 kV. Les millores realitzades a la cel·la del MOSFET de SiC afecten tant al disseny com al procés de fabricació. L’optimització de la cel·la bàsica s’ha realitzat mitjançant simulacions TCAD i l’avaluació de dades experimentals mesurades en estructures de test específiques. Les tècniques aplicades per a la millora del rendiment dels MOSFETs de SiC inclouen: i) l’ús d’un perfil de dopatge retrògrad pel pou p per obtenir un valor de Vth adequada alhora que s'evita el punch-through del pou p, ii) canal auto-alineat de longitud sub-micrònica, iii) un tractament de bor a l'òxid de la porta per millorar la interfície, iv) la ubicació discreta del contacte p per reduir les dimensions de la cel·la, v) una regió de font menys dopada (LDS) per millorar la fiabilitat, vi) l’optimització de l’àrea JFET i vii) la integració de corredors de porta per reduir el temps de commutació. Com a resultat d'aquestes investigacions, un joc complet de màscares s’ha dissenyat i utilitzat per processar oblies de diferents rangs de tensió. Tots els processos de fabricació s’han realitzat a la sala blanca de l’IMB-CNM. La caracterització elèctrica dels MOSFETs d’àrea gran mostra una Vth en el rang de 5 V, control de la porta i bona capacitat de bloqueig. No obstant, la resistència específica és relativament alta a causa de les dimensions de cel·la i la baixa mobilitat al canal. Els MOSFETS de SiC fabricats commuten a altes tensions de bus, però el temps de transició està limitat per la resistència interna de porta. Els dispositius fabricats presenten una capacitat de curtcircuit (>15 µs) superior als dispositius comercials, principalment gràcies al disseny de la cel·la. L’anàlisi del comportament elèctric valida el funcionament satisfactori dels MOSFETs de SiC fabricats fins a 6,5 kV així com també el disseny de terminació RA-JTE. El nou tractament de bor a l’òxid de porta ha demostrat reduir la resistència dels VDMOS fabricats en totes les classes de tensió sense afectar a la capacitat de bloqueig i de curt-circuit, però en compromet l'estabilitat i la fiabilitat a més de 100 °C. Aquests resultats mostren que la qualitat de la interfície continua sent el punt clau per al desenvolupament de MOSFETs de potència fiables en SiC. Finalment, també s’han investigat estructures alternatives en SiC. Destaca la integració d’un IGBT...
Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement". 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.
Texto completoDiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors". Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.
Texto completoMaster of Science
STELLA, FAUSTO. "On-line Junction Temperature Estimation of SiC Power MOSFETs". Doctoral thesis, Politecnico di Torino, 2019. http://hdl.handle.net/11583/2734315.
Texto completoFrancisco, sousa alves Luciano. "Series-connected SiC-MOSFETs : A Novel Multi-Step Packaging Concept and New Gate Drive Power Supply Configurations". Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT050.
Texto completoThis work investigates new gate drive power supply configurations and a novel multi-steppackaging concept in order to improve the performance of series-connected SiC-MOSFETs. The new gate drive configurations are proposed in order to reduce noise currents that circulate in the control part of the electrical system. Furthermore, a new gate drive power supply is proposed to increase the dv/dt of the switching cell. These improvements, i.e., noise current reduction and dv/dt boosting, are achieved by modifying the impedance of the gate drive circuitry. The novel multi-step packaging concept is proposed in order to improve the voltage sharing performance. The proposed package geometry considers optimal dielectric isolation for each device leading to a multi-step geometry. It has a significant impact on the parasitic capacitances introduced by the packaging structure that are responsible for voltageunbalances. The new gate driver configurations and the proposed multi-step packaging concepts are introduced and analysed thanks to equivalent models and time domain simulations. Then, experimental set-ups are performed to confirm that the proposed concepts are better than traditional ones in terms of voltage balancing, switching speed and conducted EMI reduction
Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits". 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Texto completoRomero, Amy Marie. "Static and Dynamic Characterization of Silicon Carbide and Gallium Nitride Power Semiconductors". Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/93744.
Texto completoMS
Laspeyres, Antoine. "Etude et conception d’un « Intelligent Power Module (IPM) » forte puissance en technologie SiC : développement du Gâte Driver". Electronic Thesis or Diss., Nantes Université, 2023. http://www.theses.fr/2023NANU4036.
Texto completoAeronautics tend to hybridize propulsion and electrify more and more functions on board. This leads to an increase in the voltage of the onboard network in order to meet these new constraints from electronic systems. To achieve these objectives, the new 3.3kV-rating SiC power semiconductor components seem to be a promising alternative to the Silicon IGBT sector. However, SiC technology’s low level of maturity compared to Si technol- ogy is the main obstacle to its implementation. The research work is part of the AM-PM RAPID project. The project objective is to design a 3.3kV@500A inverter arm power module in SiC technology by providing a technological break- through in power packaging and its monitoring. The research work focuses on the development of the gate driver and its intelligent functions to make the power module more reliable and to ensure secure switching of the semiconductor. From studies on the SiC component’s reliability, two aging indicators have been identified, the on-state resistance of the module and the gate leakage current of the semiconductor compo- nent. On-board monitoring circuits for these in- dicators have been proposed and a new semi- conductor control topology, the source driver, is proposed in order to make these circuits com- patible. Finally, a demonstrator specially de- signed for the AM-PM module is tested on a SiC module
Sun, Keyao. "Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices". Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103743.
Texto completoDoctor of Philosophy
The wide bandgap semiconductor enables next-generation power electronics systems with higher efficiency and higher power density which will reduce the space, weight, and cost for power supply and conversion systems, especially for renewable energy. However, by pushing the system voltage level higher to medium-voltage of tens of kilovolts, although the system has higher efficiency and simpler control, the reliability drops. This dissertation, therefore, focusing on solving the possible overcurrent, overvoltage, and gate failure issues of the power electronics system that is caused by the high voltage and high electromagnetic interference environment. By utilizing the inductance of the device, a dual-protection method is proposed to prevent the overcurrent problem. The overcurrent fault can be detected within tens of nanoseconds so that the device will not be destroyed because of the huge fault current. When multiple devices are connected in series to hold higher voltage, the voltage sharing between different devices becomes another issue. The proposed modeling and control method for series-connected devices can balance the shared voltage, and make the control system stable so that no overvoltage problem will happen due to the non-evenly distributed voltages. Besides the possible overcurrent and overvoltage problems, losing control of the devices due to the unreliable auxiliary power supply is another issue. This dissertation proposed a scalable auxiliary power network with high efficiency, high immunity to electromagnetic interference, and high reliability. In this network, a wireless power transfer converter is designed to provide enough insulation and isolation capability, while a switched capacitor converter is designed to transfer voltage from several kilovolts to tens of volts. With the proposed overcurrent protection method, voltage sharing control, and reliable auxiliary power network, systems utilizing medium-voltage wide-bandgap semiconductor will have higher reliability to be implemented for different applications.
Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.
Texto completoKiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre.
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Cairnie, Mark A. Jr. "Bayesian Optimization of PCB-Embedded Electric-Field Grading Geometries for a 10 kV SiC MOSFET Power Module". Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/103566.
Texto completoM.S.
Innovation trends in electrical engineering such as the electrification of consumer and commercial vehicles, renewable energy, and widespread adoption of personal electronics have spurred the development of new semiconductor materials to replace conventional silicon technology. To fully take advantage of the better efficiency and faster speeds of these new materials, innovation is required at the system-level, to reduce the size of power conversion systems, and develop converters with higher levels of integration. As the size of these systems decreases, and operating voltages rise, the design of the insulation systems that protect them becomes more critical. Historically, the design of high-density insulation system requires time-consuming design iteration, where the designer simulates a case, assesses its performance, modifies the design, and repeats, until adequate performance is achieved. The process is computationally expensive, time-consuming, and the results are not easily applied to other insulation design problems. This work proposes an automated design process that allows for the streamlined optimization of high-density insulation systems. The process is applied to a 10 kV power module and experimentally demonstrates a 38\% performance improvement over manual design techniques, while providing an 8 times reduction in design cycle time.
Rong, Yu. "A Synchronous Distributed Control and Communication Network for High-Frequency SiC-Based Modular Power Converters". Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/96395.
Texto completoThe power electronics building block (PEBB) concept is proposed for medium-voltage converter applications in order to realize the modular design of the power stage. Traditionally, the central control architecture is popular in converter systems. The voltage and current are sensed and then processed in one central controller. The control hardware interfaces and software have to be customized for a specified number of power cells, and the scalability of controller is lost. In stead, in the distributed control architecture, a local controller in each PEBB can communicate with the sensors, gate drivers, etc. A high-level controller collects the information from each PEBB and conducts the control algorithm. In this way, the design can be more modular, and the local controller can share the computation burden with the high-level controller, which is good for scalability. In such distributed control architecture, a synchronous communication system is required to transmit data and command between the high-level controller and local controllers. A power converter always requires a highly synchronized operation to turn on or turn off the devices. In this work, a synchronous communication protocol is proposed and experimentally validated on a SiC-based modular power converter.
Kulisek, Jonathan Andrew. "The Effects of Nuclear Radiation on Schottky Power Diodes and Power MOSFETs". The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1267502877.
Texto completoMocevic, Slavko. "PCB-Embedded Phase Current Sensor and Short-Circuit Detector for High Power SiC-Based Converters". Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/84348.
Texto completoMaster of Science
Together with renewable sources, electric vehicle will play an important role as a part of sustainable and renewable energy future by significantly reducing emissions of CO2 into the atmosphere. In order to make electric cars more acceptable and accessible and make a significant impact on the environment, cost must be lowered down. To wear the cost of the electric vehicles down, powertrain of the car must be significantly improved and made smaller as well as lighter. This thesis mainly focuses on improving the reliability of the motor driving stage by implementing novel protection during fault periods such as short-circuit event. Furthermore, this novel protection allows current sensing that is crucial for motor control during normal operation periods. This will enable more compact motor driving stage since existing current sensing elements can be eliminated.
Dbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters". Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.
Texto completoIn the case of photovoltaic installations, the DC/AC inverter has the highest failure rate, and the anticipation of its breakdowns is still difficult, while few studies have been done on the reliability of this type of inverter. The aim of this PhD is to propose tools and methods to study the ageing of power modules in this type of application, by focusing on ageing phenomena related to thermo-mechanical aspects. As a general rule, the accelerated ageing of power modules is carried out under aggravated conditions of current (Active Cycling) or temperature (Passive Cycling) in order to accelerate the ageing process. Unfortunately, when applying this type of accelerated ageing tests, some failure mechanisms that do not occur in the real application could be observed, while inversely, other mechanisms that usually occur could not be recreated. The first part of the PhD focuses on the implementation of an accelerated ageing method of the semiconductor devices inside photovoltaic inverters. This is accomplished by analyzing the mission profiles of the inverter’s output current and ambient temperature, extracted over several years from photovoltaic power plants located in the south of France. These profiles are used to study photovoltaic current dynamics, and are introduced into numerical models to estimate losses and junction temperature variations of semiconductors used in inverters, using the cycle counting algorithm “Rainflow”. This method is then performed in two experimental test benches. In the first one, the devices under test are IGBT modules, where the accelerated ageing profile designed is implemented using the opposition method. Moreover, an in-situ setup for monitoring ageing indicators (thermal impedance and dynamic resistance) is also proposed and evaluated. The second bench is devoted to study the ageing of SiC MOSFET power modules. The accelerated ageing test is carried out under the same conditions as for the IGBT modules with more monitored electrical indicators, but this time by disconnecting the semiconductor devices from the inverter. The results obtained allowed to determine several potential ageing indicators of IGBTs and SiC MOSFETs used in a photovoltaic inverter
Stackler, Caroline. "Transformateurs électroniques pour applications ferroviaires". Thesis, Toulouse, INPT, 2019. http://www.theses.fr/2019INPT0015.
Texto completoCurrent on-board converters, running on AC catenaries, are mainly composed by a low frequency transformer, then rectifiers, supplying traction motors through three-phase inverters. Due to volume and mass constraints on the converter, the efficiency of the transformer is limited. Moreover, this transformer is quite bulky and heavy. Thanks to the development of high voltage and high power semiconductors, such as Si IGBTs or SiC MOSFETs, and of medium frequency transformer, i.e. operating at a few kilohertz, new topologies of on-board converters, named Power Electronic Traction Transformer (PETT), are studied. Though several structures have been studied in the literature, they have never been compared. The main objective of this thesis is, thus, to develop a methodology to size PETT topologies, in order to compare them. In the first chapter, a state of the art of the PETT structures proposed in literature is presented. The second chapter is dedicated to the comparison of indirect topologies. A methodology, optimising the sizing of each structure to maximise its efficiency under mass and volume constraints, is developed. It is applied on topologies using SiC MOSFETs, contrary to Si IGBT structures developed in the literature. The magnetizing inductance is also considered to insure soft switching and reduce the losses. In the third chapter, an novel active filter, included in the DC-DCs of the converter, is proposed. The aim is to reduce the volume of the filtering capacitors on the intermediate buses, and thus, of the entire converter, without impacting the intrinsic reliability of the converter. Its impact on the losses of the DC-DC is studied. The last chapter deals with the interactions between the on-board converter and the infrastructure. Thus, the 25 kV-50 Hz railway network is modeled. It includes a novel circuit, modelling the skin effect in the catenary. Some resonances, dependant on the sector geometry and the train position, are highlighted in the impedance seen by a train. Moreover, the models are implemented in a numerical simulator to supply a small scale mock-up of a PETT. PHIL tests have, a priori, never been carried on a PETT. A conclusion and some perspectives of future work close thisdissertation
Salinaro, Alberto Verfasser], Lothar [Gutachter] Frey y Nando [Gutachter] [Kaminski. "Characterization and Development of the 4H-SiC/SiO2 Interface for Power MOSFET Applications / Alberto Salinaro ; Gutachter: Lothar Frey, Nando Kaminski". Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2016. http://d-nb.info/1118850076/34.
Texto completoSalinaro, Alberto [Verfasser], Lothar Gutachter] Frey y Nando [Gutachter] [Kaminski. "Characterization and Development of the 4H-SiC/SiO2 Interface for Power MOSFET Applications / Alberto Salinaro ; Gutachter: Lothar Frey, Nando Kaminski". Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2016. http://d-nb.info/1118850076/34.
Texto completoAviñó, Salvadó Oriol. "Contribution to the study of the SiC MOSFETs gate oxide". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI110/document.
Texto completoSiC power MOSFETs are called to replace Si IGBT for some medium and high power applications (hundreds of kVA). However, even if crystallographic defects have been drastically reduced, SiC MOSFETs are always concerned by some robustness issues such as the internal diode robustness or the robustness of the gate oxide. The last one especially affects MOSFETs devices and is linked to the apparition of instabilities in the threshold voltage. This thesis focuses on these two issues. The study of the internal diode robustness highlighted that the I-V curve (of the intrinsic diode) remains stable after the application of a current stress in static mode, but also with the DUT placed in a converter with inductive switchings. These are the most stressful conditions. However, a surprising drift in the threshold voltage has been observed when some devices operates under these conditions; in static mode or in a converter. Complementary tests stressing the channel instead of the internal diode in the same temperature and dissipated power, have not resulted in a drift of the threshold voltage. Thus, the application of a current stress when the device is in accumulation regime could favour the apparition of instabilities in the threshold voltage. The study of the gate oxide focus in the instabilities of the threshold voltage, but also on the expected lifetime of the oxide at nominal conditions. Results obtained shown that the expected lifetime (TDDB) of the oxide is no longer a problem. Indeed, tests realized in static mode, but also in a converter under inductive switching conditions resulted in expected lifetimes well above 100 years. However, the monitoring of the gate current during the test and gate capacitance characterizations C(V) highlighted a shift in the capacitance due to carrier injection and trapping phenomena and probably to the presence of mobile-ions. Still regarding the instabilities of the threshold voltage, classic tests resulted in no significant variations of the threshold voltage at 150 _C. However, at 200 _C the drift observed for some manufacturers is higher than +30%. This is unacceptable for high-temperature applications and evidence that the quality of the gate oxide and the SiC=SiO2 interface must continue to be improved, together with the manufacturing methods to minimize the presence of mobile ions in the substrate
Watt, Grace R. "Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module". Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/96559.
Texto completoMaster of Science
This paper describes the design, construction, and testing of advanced power devices for use in electric vehicles. Power devices are necessary to supply electricity to different parts of the vehicle; for example, energy is stored in a battery as direct current (DC) power, but the motor requires alternating current (AC) power. Therefore, power electronics can alter the energy to be delivered as DC or AC. In order to carry more power, multiple devices can be used together just as 10 people can carry more weight than 1 person. However, because the devices are not perfect, there can be slight differences in the performance of one device to another. One device may have to carry more current than another device which could cause failure earlier than intended. In this research project, multiple power devices were placed into a package, or "module." In a control module, the devices were selected with similar properties to one another. In an experimental module, the devices were selected with properties very different from one another. It was determined that the when the devices were 17.7% difference, there was 119.9 µJ more energy loss and it was 22.2°C hotter than when the difference was only 0.6%. However, the severity of the difference was dependent on how multiple device characteristics interacted with one another. It may be possible to compensate some of the impact of device differences in one characteristic with opposing differences in another device characteristic.
Molin, Quentin. "Contribution à l’étude de la robustesse des MOSFET-SiC haute tension : Dérive de la tension de seuil et tenue aux courts-circuits". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI111.
Texto completoThis manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks. Others power switches available are still introduced and an introduction to reliability is explaining why such work on this new power switches is important. Transition from Si technologies to SiC ones require a lot of work regarding its robustness. Before showing reliability and robustness results is presented I give a lot of details regarding to the measurement and monitoring of key parameters used in the next chapters. The results of our tests on the threshold voltage instability are presented and how we validated an empirical model on this drift. This was used to propose an enhanced measurement protocol on the threshold voltage. Static and dynamic experimental results presented next will show if the voltage drift during ageing is significant or not. Further analysis is proposed to add more insight on the understanding of the oxide degradation mechanisms through C-V and charge pumping measurements. Finally, the ageing results presented on 1,7 kV SiC MOSFET are focused on the short-circuit and repetitive short-circuit behavior of the same components. Drain to source voltage influence on critical energy during this particular and stressful operation mode is studied. This time, the results are worrying.The last chapter is confidential
Barazi, Yazan. "Fast short-circuit protection for SiC MOSFETs in extreme short-circuit conditions by integrated functions in CMOS-ASIC technology". Thesis, Toulouse, INPT, 2020. http://www.theses.fr/2020INPT0091.
Texto completoWide bandgap power transistors such as SiC MOSFETs and HEMTs GaN push furthermore the classical compromises in power electronics. Briefly, significant gains have been demonstrated: better efficiency, coupled with an increase in power densities offered by the increase in switching frequency. HV SiC MOSFETs have specific features such as a low short-circuit SC withstand time capability compared to Si IGBTs and thinner gate oxide, and a high gate-to-source switching control voltage. The negative bias on the gate at the off-state creates additional stress which reduces the reliability of the SiC MOSFET. The high positive bias on the gate causes a large drain saturation current in the event of a SC. Thus, this technology gives rise to specific needs for ultrafast monitoring and protection. For this reason, the work of this thesis focuses on two studies to overcome these constraints, with the objective of reaching a good performance compromise between “CMS/ASIC-CMOS technological integration level-speed–robustness”. The first one, gathers a set of new solutions allowing a detection of the SC on the switching cycle, based on a conventional switch control architecture with two voltage levels. The second study is more exploratory and is based on a new gate-driver architecture, called multi-level, with low stress level for the SiC MOSFET while maintaining dynamic performances. The manuscript covers firstly the SiC MOSFET environment, (characterization and properties of SC behavior by simulation using PLECS and LTSpice software) and covers secondly a bibliographical study on the Gate drivers. And last, an in-depth study was carried out on SC type I & II (hard switch fault) (Fault under Load) and their respective detection circuits. A test bench, previously carried out in the laboratory, was used to complete and validate the analysis-simulation study and to prepare test stimuli for the design stage of new solutions. Inspired by the Gate charge method that appeared for Si IGBTs and evoked for SiC MOSFETs, this method has therefore been the subject of design, dimensioning and prototyping work, as a reference. This reference allows an HSF type detection in less than 200ns under 400V with 1.2kV components ranging from 80 to 120mOhm. Regarding new rapid and integrated detection methods, the work of this thesis focuses particularly on the design of a CMOS ASIC circuit. For this, the design of an adapted gate driver is essential. An ASIC is designed in X-Fab XT-0.18 SOICMOS technology under Cadence, and then packaged and assembled on a PCB. The PCB is designed for test needs and adaptable to the main bench. The design of the gate driver considered many functions (SC detection, SSD, segmented buffer, an "AMC", ...). From the SC detection point of view, the new integrated monitoring functions concern the VGS time derivative method which is based on a detection by an RC analog shunt circuit on the plateau sequence with two approaches: the first approach is based on a dip detection, i.e. the presence or not of the Miller plateau. The second approach is based on slope detection, i.e. the variability of the input capacitance of the power transistor under SC-HSF compared to normal operation. These methods are compared in the third chapter of the thesis, and demonstrate fault detection times between 40ns and 80ns, and preliminary robustness studies and critical cases are presented. A second new method is partially integrated in the ASIC, was designed. This method is not developed in the manuscript for valorization purposes. In addition to the main study, an exploratory study has focused on a modular architecture for close control at several bias voltage levels taking advantage of SOI isolation and low voltage CMOS transistors to drive SiC MOSFETs and improve their reliability through active and dynamic multi-level selection of switching sequences and on/off states
Roder, Raphaël. "Intégration et fiabilité d'un disjoncteur statique silicium intelligent haute température pour application DC basse et moyenne tensions". Thesis, Bordeaux, 2015. http://www.theses.fr/2015BORD0287/document.
Texto completoThis thesis presents a study about a smart solid state circuit breaker which can work at 200°C forlow and medium voltage continuous applications. Some applications in aeronautics, automotive,railways, petroleum extraction push power semiconductor devices to operate at high junctiontemperature. However, current commercially available Si-IGBT and Si-CoolMOS have basically amaximum junction temperature specified and rated at 150°C and even 175°C. Indeed, the main problemin conventional DC-DC converters is the switching losses of power semiconductor devices (linked to thetemperature influence on carrier lifetime, on-state voltage, on-resistance and leakage current) whichdrastically increase with the temperature rise and may drive to the device failure. Then, the use of wideband gap semiconductor like SiC or GaN devices allows higher junction temperature operation (intheory about 500°C) and higher integration (smaller heatsink, higher switching frequency, smallconverter), but are still under development and are expensive technologies. In order to keep theadvantage of low cost silicon devices, a solution is to investigate the feasibility to operate such devicesat junction temperature up to 200°C.Before starting the first starting chapter is a stat of the art of protectives circuit technics as well asmechanics as statics in order to identify essentials elements to develop the protective circuit. Hybridprotective circuits are approached too.From the precedent chapter, a smart and low power solid state circuit breaker is realized to identifyproblems which are linked with this type of circuit breaker. Solid state circuit breaker is developed withanalog components in a way that is autonomous and low cost. It’s follow that stray inductance andtemperature have an important impact when a default occurs.Chapter III give an analyze on different silicon power semiconductor dice towards temperature5relying on statics and dynamics characteristics in order to find the best silicon power switch which beused in the chapter IV. It has been shown that super junction MOSFET has the same behavior at lowpower than silicon carbide MOSFET.Solid state circuit breaker (400V/63A) has been studied and developed, in order to use all theknowledge previously acquired and to show the competitively of the silicon for this power range
Santini, Thomas. "Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI021/document.
Texto completoRecent years have seen SiC MOSFET reach the industrial market. This type of device is particularly adapted to the design of power electronics equipment with high efficiency and high reliability capable to operate in high ambient temperature. Nevertheless the question of the SiC MOSFET reliability has to be addressed prior to considering the implementation of such devices in an aeronautic application. The failure mechanisms linked to the gate oxide of the SiC MOSFET have for a long time prevented the introduction of the device. In this manuscript we propose to study the reliability of the first generation of SiC MOSFET. First, the mechanism known as the Time–Dependent Dielectric Breakdown is studied through experimental results extracted from literature. Our study shows the successful application of a Weibull law to model the time-to-failure distribution extracted from the accelerated tests. The results show also a significant improvement of the SiC MOSFET structure with respect to this phenomenon. In a second step, the impact of the threshold voltage instability is quantified through accelerated tests known as High Temperature Gate Bias. The collected degradation data are modeled using a non-homogeneous Gamma process. This approach allows taking into account the variability between devices tested under the same conditions. Acceleration factors have been proposed with respect to temperature and gate voltage. Eventually the study delivers a primary estimation of the remaining useful lifetime of the SiC MOSFET in a typical aeronautic application
Alhoussein, Ali. "Caractérisation et modélisation CEM des nouvelles technologie de composants de puissance (SIC). : Application : convertisseurs de puissance". Thesis, Normandie, 2020. http://www.theses.fr/2020NORMR043.
Texto completoWith the development of new large-gap power components with superior performance compared to their Silicon counterparts and the rising integration of these components in the electric vehicle, electromagnetic compatibility has become an important issue for compliance with normative standards. Hence, this thesis discusses the modeling methods of wide bandgap components. Problems related to the reliability of the models and their accuracy are highlighted. Then, a new model is proposed with specific formulations allowing it to better reproduce the static and dynamic characteristics of SiC MOSFETs. Test benches have been set up to characterize these new components with specific precautions in order to improve the precision of the measurements. The use of a developed genetic algorithm to identify the parameters of the proposed generic model, allowed a close reproduction of the characteristics measured experimentally of several SiC components as well as the EMC disturbances generated in a static converter
Shah, Vatsal Sonikbhai. "Optimization and Up-Gradation of 3-Phase Half-Bridge Inverter Board". Thesis, Linköpings universitet, Elektroniska Kretsar och System, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-173664.
Texto completoNiu, Shiqin. "Conception, optimisation et caractérisation d’un transistor à effet de champ haute tension en Carbure de Silicium". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI136/document.
Texto completoSilicon carbide (SiC) has higher critical electric field for breakdown and lower intrinsic carrier concentration than silicon, which are very attractive for high power and high temperature power electric applications. In this thesis, a new 3.3kV/20A SiC-4H JFET is designed and fabricated for motor drive (330kW). This breakdown voltage is beyond the state of art of the commercial unipolar SiC devices. The first characterization shows that the breakdown voltage is lower (2.5kV) than its theoretical value. Also the on-state resistance is more important than expected. By means of finite element simulation the origins of the failure are identified and then verified by optical analysis. Hence, a new layout is designed followed by a new generation of SiC-4H JFET is fabricated. Test results show the 3.3kV JFET is developed successfully. Meanwhile, the electro-thermal mechanism in the SiC JFETs under short circuit is studied by means of TCAD simulation. The commercial 1200V SIT (USCi) and LV-JFET (Infineon) are used as sample. A hotspot inside the structures is observed. And the impact the bulk thickness and the canal doping on the short circuit capability of the devices are shown. The physical models validated by this study will be used on our 3.3kV once it is packaged
Liebig, Sebastian. "Optimization of rectifiers for aviation regarding power density and reliability". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-159936.
Texto completoHauptziele des sogenannten "More Electrical Aircraft" (MEA) sind Effizienzerhöhung und Gewichtseinsparung. Ein Schwerpunkt hierbei ist die Nutzung von elektrischen statt hydraulischen, pneumatischen und mechanischen Systemen. Die notwendigen Leistungselektroniken haben DC-Zwischenkreise, welche mittels aktiven B6 und passiven B12 Gleichrichtern aus dem Dreiphasennetz gespeist werden. Eine mögliche Alternative ist die B6 Diodenbrücke in Kombination mit einem aktiven Netzfilter, welcher aufgrund der parallelen Anordnung eine höhere Leistungsdichte aufweist und darüber hinaus mehrere Geräte gleichzeitig entstören kann. Die alleinige Nutzung einer Diodenbrücke ist aufgrund des hohen Anteils von Stromharmonischen nicht zulässig. Diese Arbeit beschäftigt sich mit der Entwicklung eines aktiven Filters für ein Dreiphasensystem mit variabler Frequenz von 360 bis 800 Hz. Es werden alle relevanten Bauteile wie Induktivitäten, EMV-Filter, Leistungsmodule und Zwischenkreiskondensator ausgelegt. Besonderes Augenmerk liegt auf dem kundenspezifischen Modul mit SiC-Dioden und SiCMOSFETs, welches vollständig elektrisch und thermisch charakterisiert wird. Die Änderung der Netzfrequenz beträgt bis zu 50 Hz/ms, was eine hohe Dynamik und Robustheit von der Filterregelung verlangt. Weiterhin ist im statischen Fall eine hohe Genauigkeit gefordert, da die 5. und 7. Harmonische auf unter 2% geregelt werden müssen. Um beiden Anforderungen gerecht zu werden, wird ein zweistufiger Regelungsalgorithmus entwickelt der auf zwei digitalen Signalprozessoren implementiert wird. Simulationen und Labormessungen bestätigen die Robustheit des Regelungskonzeptes. Diese Arbeit stellt umfassend die Entwicklung von Luftfahrtgleichrichtern dar. Die Ergebnisse wurden in Konferenzen und Patenten veröffentlicht
Xiangxiang, Fang. "Characterization and Modeling of SiC Power MOSFETs". The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1354687371.
Texto completoLiebig, Sebastian. "Optimization of rectifiers for aviation regarding power density and reliability". Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20187.
Texto completoHauptziele des sogenannten "More Electrical Aircraft" (MEA) sind Effizienzerhöhung und Gewichtseinsparung. Ein Schwerpunkt hierbei ist die Nutzung von elektrischen statt hydraulischen, pneumatischen und mechanischen Systemen. Die notwendigen Leistungselektroniken haben DC-Zwischenkreise, welche mittels aktiven B6 und passiven B12 Gleichrichtern aus dem Dreiphasennetz gespeist werden. Eine mögliche Alternative ist die B6 Diodenbrücke in Kombination mit einem aktiven Netzfilter, welcher aufgrund der parallelen Anordnung eine höhere Leistungsdichte aufweist und darüber hinaus mehrere Geräte gleichzeitig entstören kann. Die alleinige Nutzung einer Diodenbrücke ist aufgrund des hohen Anteils von Stromharmonischen nicht zulässig. Diese Arbeit beschäftigt sich mit der Entwicklung eines aktiven Filters für ein Dreiphasensystem mit variabler Frequenz von 360 bis 800 Hz. Es werden alle relevanten Bauteile wie Induktivitäten, EMV-Filter, Leistungsmodule und Zwischenkreiskondensator ausgelegt. Besonderes Augenmerk liegt auf dem kundenspezifischen Modul mit SiC-Dioden und SiCMOSFETs, welches vollständig elektrisch und thermisch charakterisiert wird. Die Änderung der Netzfrequenz beträgt bis zu 50 Hz/ms, was eine hohe Dynamik und Robustheit von der Filterregelung verlangt. Weiterhin ist im statischen Fall eine hohe Genauigkeit gefordert, da die 5. und 7. Harmonische auf unter 2% geregelt werden müssen. Um beiden Anforderungen gerecht zu werden, wird ein zweistufiger Regelungsalgorithmus entwickelt der auf zwei digitalen Signalprozessoren implementiert wird. Simulationen und Labormessungen bestätigen die Robustheit des Regelungskonzeptes. Diese Arbeit stellt umfassend die Entwicklung von Luftfahrtgleichrichtern dar. Die Ergebnisse wurden in Konferenzen und Patenten veröffentlicht.
Fayyaz, Asad. "Performance and robustness characterisation of SiC power MOSFETs". Thesis, University of Nottingham, 2018. http://eprints.nottingham.ac.uk/48937/.
Texto completoŠpaněl, Petr. "Spínané zdroje". Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2020. http://www.nusl.cz/ntk/nusl-433024.
Texto completoRong, Hua. "Development of 4H-SiC power MOSFETs for high voltage applications". Thesis, University of Warwick, 2015. http://wrap.warwick.ac.uk/79426/.
Texto completoMarzoughi, Alinaghi. "Investigating Impact of Emerging Medium-Voltage SiC MOSFETs on Medium-Voltage High-Power Applications". Diss., Virginia Tech, 2018. http://hdl.handle.net/10919/81822.
Texto completoPh. D.
Akram, Farhan. "Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs". Thesis, Mittuniversitetet, Institutionen för elektronikkonstruktion, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-41188.
Texto completoGopalakrishna, Keshava. "Frequency Characterization of Si, SiC,and GaN MOSFETs Using Buck ConverterIn CCM as an Application". Wright State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=wright1387661422.
Texto completoGill, Lee. "Evaluation and Development of Medium-Voltage Converters Using 3.3 kV SiC MOSFETs for EV Charging Application". Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/93976.
Texto completoThe field of power electronics, which controls and manages the conversion of electrical energy, is an important topic of discussion, as new technologies like electric vehicles (EV) are quickly emerging and disrupting the current status-quo of vehicle-choice. In order to promote timely and extensive adoption of such an enabling EV technology, it is critical to understand the current challenges involving EV charging stations and seek out opportunities to engender future innovations. Indeed, wide-bandgap (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities in enabling the realization of superior power conversion systems. Thus, utilizing these WGB devices in EV charging applications can bring about improved design and development of EV fast chargers that are faster-charging, more efficient, and more effective. Hence, this thesis presents an opportunity in EV charging station applications with the utilization of medium-voltage SiC MOSFETs. Because the current fast-charging solution involves a heavy and bulky transformer, it adds installation complexity for EV charging stations. However, this thesis presents an alternative power-delivery solution that could potentially provide an efficient and fast-charging mechanism of EVs while reducing the size of EV chargers. All things considered, this thesis provides in-depth evaluation-studies of medium-voltage 3.3 kV SiC MOSFET-based power converters, targeted for future fast EV charging applications. The development and design of the hardware prototype is presented in this thesis, along with testing and verification of experimental results.
Ohn, Sungjae. "Circuits and Modulation Schemes to Achieve High Power-Density in SiC Grid-connected Converters". Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/89550.
Texto completoDoctor of Philosophy
The power density of a power electronics system is regarded as an indicator of technological advances. The higher the power density of the power supply, the more power it can generate with the given volume and weight. The size requirement on power electronics has been driven towards tighter limits, as the dependency on electric energy increases with the electrification of transportation and the emergence of grid-connected renewable energy sources. However, the efficiency of a power electronics system is an essential factor and is regarded as a trade-off with the power density. The size of power electronics systems is largely impacted by its magnetic components for filtering, as well as its cooling system, such as a heatsink. Once the switching frequency of power semiconductors is increased to lower the burden on filtering, more loss is generated from filters and semiconductors, thus enlarging the size of the cooling system. Therefore, considering the efficiency has to be maintained at a reasonable value, the power density of Si-based converters appears to be saturated. With the emergence of wide-bandgap devices such as silicon carbide (SiC) or gallium nitride (GaN), the switching frequency of power devices can be significantly increased. This is a result of superior material properties, compared to Si-based power semiconductors. For grid-connected applications, SiC devices are adopted, due to the limitations of voltage ratings in GaN devices. Before commercial SiC devices were available, the power density of SiC- based three-phase inverters was expected to go over 20 𝑘𝑊 𝑑𝑚3 ⁄ . However, the state-of-the art designs shows the power density around 3 ~ 4 𝑘𝑊 𝑑𝑚3 ⁄ , and at most 17 𝑘𝑊 𝑑𝑚3 ⁄ . The SiC devices could increase the power density, but they have not reached the level expected. The adoption of SiC devices with faster switching was not a panacea for power density improvement. This dissertation starts with an analysis of the factors that prevent power density improvement of SiC-based, grid-connected, three-phase inverters. Three factors were identified: a limited increase in the switching frequency, large high-frequency noise generation to be filtered, and smaller but still significant magnetic components. Using a generic design procedure for three-phase inverters, each chapter seeks to frame a strategy and develop techniques to enhance the power density. For smaller magnetic components, a magnetic integration scheme is proposed for paralleled ac-dc converters. To reduce the size of the noise filter, an accurate modeling approach was taken to predict the noise phenomena during the design phase. Also, a modulation scheme to minimize the noise generation of the ac-ac stage is proposed. The validity of the proposed technique was verified by a full-SiC three-phase uninterruptible power supply with optimized hardware design. Lastly, the benefit of soft-switching modulation, which leads to a significant increase in switching frequency, was analyzed. The hardware optimization procedure was developed and compared to hard-switched three-phase inverters.
Beydoun, Bilal. "Simulation et conception des transistors M. O. S. De puissance". Toulouse 3, 1994. http://www.theses.fr/1994TOU30163.
Texto completoEial, Awwad Abdullah [Verfasser], Sibylle [Akademischer Betreuer] Dieckerhoff, Sibylle [Gutachter] Dieckerhoff, Regine [Gutachter] Mallwitz y Uwe [Gutachter] Schäfer. "On the perspectives of SiC MOSFETs in high-frequency and high-power isolated DC/DC converters / Abdullah Eial Awwad ; Gutachter: Sibylle Dieckerhoff, Regine Mallwitz, Uwe Schäfer ; Betreuer: Sibylle Dieckerhoff". Berlin : Technische Universität Berlin, 2018. http://d-nb.info/116832405X/34.
Texto completoChih-Pan, Yang y 楊志潘. "Investigation of Device Structure and Application of SiC Power MOSFET". Thesis, 2004. http://ndltd.ncl.edu.tw/handle/zbqtv3.
Texto completo國立交通大學
電子工程系所
92
The basic structure of power MOSFET consists of an epitaxial layer for voltage blocking and a drain electrode at the substrate contact. In the conventional double diffused MOSFET, the poor channel resistance and JFET effect limited the DIMOS performance. The trench gate MOSFET, have a much improved on-resistance and packing density because of its vertical channel, however, a high local electric field at the trench corner is of critical importance to the performance of the device. A innovative structure of SiC accumulation-mode MOSFET designed to improve the performance of conventional structure of power MOSFET. This thesis focused on the design of high voltage MOSFET on SiC power devices. Parameter extraction for 4H-SiC MOS devices is the main focus for this thesis, which includes the mobility parameter extraction. Detailed analysis of the important design parameters of the innovative structure is performed using MEDICI with the parameter been used in calibration process.
(11184465), Madankumar Sampath. "Deeply-Scaled Fully Self-Aligned Trench MOSFETs in 4H-SiC". Thesis, 2021.
Buscar texto completoIncreasing demand for higher power density in many applications such as Hybrid Electric Vehicles (HEVs) and renewable power generation has led to great technological advances in power electronics. To meet this increasing demand, a power semiconductor device needs to have low on resistance, increased switching speeds and reduced total system cost. Silicon (Si) power devices have been used for several decades but they are fundamentally limited by material properties. Silicon carbide (SiC) as a power semiconductor material offers superior electrical and thermal properties compared to silicon, which it can replace in a large spectrum of applications. Because of a lower critical electric field, drift regions in Si power transistors need to be much thicker and more lightly doped, which in turn increases the specific onresistance Ron,sp. To combat the drift resistance component for higher blocking voltages, superjunction MOSFETs for medium voltages and Si IGBTs for high voltages are used. Since IGBTs are bipolar transistors, they exhibit much higher switching energy losses than MOSFETs. The SiC MOSFET is an excellent candidate in the medium to high voltage range, which mainly targets the HEV market.
Due to their low channel mobility, SiC MOSFETs have not reached the theoretical limit below 1200 V where channel resistance is dominant. Planar DMOSFETs dominate the
commercial SiC market today because of higher yield and relatively simpler fabrication process, but trench MOSFETs can be made with a smaller cell area and thus lower Ron,sp. Due to lower cell-pitch and high integration density of trench-gate devices, they offer an opportunity to reduce the size and weight of HEV power control units by replacing IGBTs with MOSFETs. The single-trench UMOSFET was first reported in 1994 by CREE and the first oxide protected trench MOSFET in 1998 by Purdue. This structure inserts a grounded p-type region below the gate trench to protect the oxide in the blocking state. In 2012, Rohm Semiconductor reported a novel double-trench UMOSFET with separate gate and
field-protection trenches. In 2017, Infineon published their new trench UMOSFET, known as Cool-SiC, with high gate oxide reliability. In this work a deeply-scaled, fully-self-aligned trench MOSFET is fabricated and characterized. The innovative process described enables a record cell-pitch of 0.5 μm per channel, equivalent to a channel density 6Å~ higher than currently available commercial UMOSFETs.
(9115403), Rahul Padavagodu ramamurthy. "VERTICAL TRIGATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR IN 4H - SILICON CARBIDE". Thesis, 2020.
Buscar texto completoAdvances in modern technology and recent demand for high power applications have motivated great interest in power electronics. Power semiconductor devices are key components that have enabled significant advances in power electronic systems. Historically, silicon has been the material of choice for power semiconductor devices such as diodes, transistors and thyristors. However, silicon devices are now reaching their fundamental limits, and a transition to wide bandgap semiconductors is critical to make further progress in the field. Among them, SiC (silicon carbide) has attracted increasing attention as a power semiconductor to replace silicon due to its superior properties and technological maturity. In fact, SiC power MOSFETs have been commercially available since 2011, and are actively replacing their silicon counterparts at blocking voltages above 1 kV. At these voltages, the specific on-resistance of SiC MOSFETs is 200-300x lower than that of silicon devices. However, conventional vertical SiC MOSFETs are still far from their theoretical performance at blocking voltages below 2 kV. In this regime, the channel resistance is the dominant limitation due to the relatively low channel mobility at the SiO2/4H-SiC MOS interface.
In this thesis, the first successful demonstration of a novel power device in 4H-SiC called the trigate power DMOSFET (double diffused metal oxide semiconductor field effect transistor) is presented. This device reduces the channel resistance by a factor of 3-5× compared with the state-of-art commercial power DMOSFETs, without requiring an increase in the channel mobility. The trigate structure is applied to a power MOSFET for the first time along with a self-aligned short channel process. This new structure utilizes both the conventional horizontal surface as well as the sidewalls of a trench to increase the effective width of the channel without increasing the device area. Conceptual design, optimization, process development and electrical results are presented. The trigate power MOSFET with a trench depth of 1 μm designed for a blocking voltage of 650 V has a specific on-resistance of 1.98 mΩcm2 and a channel resistance of 0.67 mΩcm2.This corresponds to a ∼2× reduction in the total specific on-resistance, and a 3.3× reduction in the specific channel resistance as compared to a conventional DMOSFET with the same blocking voltage rating. This demonstration is a landmark that could help SiC technology compete successfully in the lower blocking voltage regime below 600 V, and access for the first time a completely new segment in the power electronics application space.
MAZZA, BRUNA. "Defects and traps electrical characterization in 4H-SiC PowerMOSFET". Doctoral thesis, 2021. http://hdl.handle.net/11570/3214439.
Texto completo"High Power Density, High Efficiency Single Phase Transformer-less Photovoltaic String Inverters". Doctoral diss., 2017. http://hdl.handle.net/2286/R.I.45041.
Texto completoDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2017
(11184600), Md monzurul Alam. "The Design, Fabrication, and Characterization of Waffle-substrate-based n-channel IGBTs in 4H-SiC". Thesis, 2021.
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