Artículos de revistas sobre el tema "SiC power device"
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Harris, C. I., A. O. Konstantinov, C. Hallin y E. Janzén. "SiC power device passivation using porous SiC". Applied Physics Letters 66, n.º 12 (20 de marzo de 1995): 1501–2. http://dx.doi.org/10.1063/1.113668.
Texto completoLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen y John W. Palmour. "Performance and Reliability of SiC Power MOSFETs". MRS Advances 1, n.º 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Texto completoChow, T. Paul. "SiC Bipolar Power Devices". MRS Bulletin 30, n.º 4 (abril de 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.
Texto completovan Zeghbroeck, Bart y Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs". Materials Science Forum 924 (junio de 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
Texto completoFriedrichs, Peter. "SiC Power Devices as Enabler for High Power Density - Aspects and Prospects". Materials Science Forum 778-780 (febrero de 2014): 1104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1104.
Texto completoPalmer, Michael J., R. Wayne Johnson, Tracy Autry, Rizal Aguirre, Victor Lee y James D. Scofield. "SiC Power Switch Module". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (1 de enero de 2010): 000316–24. http://dx.doi.org/10.4071/hitec-rwjohnson-wp26.
Texto completoSoelkner, Gerald, Winfried Kaindl, Michael Treu y Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure". Materials Science Forum 556-557 (septiembre de 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.
Texto completoAl-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters". CPSS Transactions on Power Electronics and Applications 7, n.º 2 (30 de junio de 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.
Texto completoWalden, Ginger G., Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh y Rob Howell. "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion". Materials Science Forum 600-603 (septiembre de 2008): 1139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1139.
Texto completoChowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno y T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices". Materials Science Forum 778-780 (febrero de 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Texto completoVobecký, Jan. "The current status of power semiconductors". Facta universitatis - series: Electronics and Energetics 28, n.º 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Texto completoGreen, Ronald, Aivars J. Lelis y Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing". Materials Science Forum 717-720 (mayo de 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Texto completoFurubayashi, Yutaka, Takafumi Tanehira, Kei Yonemori, Nobuhide Seo y Shinichiro Kuroki. "3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device". Materials Science Forum 858 (mayo de 2016): 1107–11. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1107.
Texto completoTournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Josep Montserrat, Dominique Planson y F. Sarrus. "Current Sensing for SiC Power Devices". Materials Science Forum 527-529 (octubre de 2006): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1215.
Texto completoOZPINECI, BURAK, LEON M. TOLBERT, SYED K. ISLAM y MD HASANUZZAMAN. "SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES". International Journal of High Speed Electronics and Systems 12, n.º 02 (junio de 2002): 439–48. http://dx.doi.org/10.1142/s0129156402001368.
Texto completoPhlips, Bernard F., Karl D. Hobart, Francis J. Kub, Robert E. Stahlbush, Mrinal K. Das, Gianluigi De Geronimo y Paul O' Connor. "Silicon Carbide Power Diodes as Radiation Detectors". Materials Science Forum 527-529 (octubre de 2006): 1465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1465.
Texto completoRadhakrishnan, Rahul, Tony Witt, Seungchul Lee y Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters". Materials Science Forum 858 (mayo de 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.
Texto completoIkpe, Stanley A., Jean-Marie Lauenstein, Gregory A. Carr, Don Hunter, Lawrence L. Ludwig, William Wood, Linda Y. Del Castillo, Mohammad M. Mojarradi, Fred Fitzpatrick y Yuan Chen. "Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 de enero de 2016): 000184–89. http://dx.doi.org/10.4071/2016-hitec-184.
Texto completoMaralani, Ayden, Wei Cheng Lien, Nuo Zhang y A. P. Pisano. "Silicon Carbide Transistors for IC Design Applications up to 600 °C". Materials Science Forum 778-780 (febrero de 2014): 1126–29. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1126.
Texto completoPotbhare, Siddharth, Neil Goldsman, Akin Akturk y Aivars J. Lelis. "Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter". Materials Science Forum 645-648 (abril de 2010): 1163–66. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1163.
Texto completoPotbhare, Siddharth, Akin Akturk, Neil Goldsman, James M. McGarrity y Anant Agarwal. "Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (1 de enero de 2010): 000144–51. http://dx.doi.org/10.4071/hitec-spotbhare-tp22.
Texto completoKodolitsch, E., V. Sodan, M. Krieger y N. Tsavdaris. "Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices". Materials Science Forum 1062 (31 de mayo de 2022): 49–53. http://dx.doi.org/10.4028/p-f26rb5.
Texto completoGuo, Jianing. "Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs". Academic Journal of Science and Technology 3, n.º 3 (22 de noviembre de 2022): 247–54. http://dx.doi.org/10.54097/ajst.v3i3.2992.
Texto completoTezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda y Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices". Materials Science Forum 717-720 (mayo de 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.
Texto completoSUGAWARA, YOSHITAKA. "Progress of Power Semiconductor Devices. 5. Recent Development of SiC Power Device." Journal of the Institute of Electrical Engineers of Japan 118, n.º 5 (1998): 282–85. http://dx.doi.org/10.1541/ieejjournal.118.282.
Texto completoHolz, Matthias, Jochen Hilsenbeck, Ralf Otremba, Alexander Heinrich, Peter Türkes y Roland Rupp. "SiC Power Devices: Product Improvement Using Diffusion Soldering". Materials Science Forum 615-617 (marzo de 2009): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.613.
Texto completoLangpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee y Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET". Crystals 12, n.º 2 (11 de febrero de 2022): 245. http://dx.doi.org/10.3390/cryst12020245.
Texto completoRyu, Sei Hyung, Sumi Krishnaswami, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour y James D. Scofield. "4H-SiC DMOSFETs for High Speed Switching Applications". Materials Science Forum 483-485 (mayo de 2005): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.797.
Texto completoRYU, SEI-HYUNG, SUMI KRISHNASWAMI, MRINAL DAS, JAMES RICHMOND, ANANT ANANT AGARWAL, JOHN PALMOUR y JAMES SCOFIELD. "2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS". International Journal of High Speed Electronics and Systems 14, n.º 03 (septiembre de 2004): 879–83. http://dx.doi.org/10.1142/s0129156404002983.
Texto completoRichmond, Jim, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal y John Palmour. "Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (1 de enero de 2010): 000136–43. http://dx.doi.org/10.4071/hitec-jrichmond-tp21.
Texto completoCheng, Lin, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gang Yao Wang, Vipindas Pala et al. "Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings". Materials Science Forum 778-780 (febrero de 2014): 1089–95. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1089.
Texto completoGudjónsson, G., Fredrik Allerstam, Per Åke Nilsson, Hans Hjelmgren, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle y R. Jos. "High Frequency 4H-SiC MOSFETs". Materials Science Forum 556-557 (septiembre de 2007): 795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.795.
Texto completoRueschenschmidt, Kathrin, Michael Treu, Roland Rupp, Peter Friedrichs, Rudolf Elpelt, Dethard Peters y Peter Blaschitz. "SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch". Materials Science Forum 600-603 (septiembre de 2008): 901–6. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.901.
Texto completoMarek, Juraj, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova y Martin Weis. "Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress". Materials 15, n.º 22 (19 de noviembre de 2022): 8230. http://dx.doi.org/10.3390/ma15228230.
Texto completoIwamuro, Noriyuki. "Recent Progress of SiC MOSFET Devices". Materials Science Forum 954 (mayo de 2019): 90–98. http://dx.doi.org/10.4028/www.scientific.net/msf.954.90.
Texto completoBAKIN, ANDREY S. "SiC HOMOEPITAXY AND HETEROEPITAXY". International Journal of High Speed Electronics and Systems 15, n.º 04 (diciembre de 2005): 747–80. http://dx.doi.org/10.1142/s0129156405003417.
Texto completoHazdra, Pavel, Stanislav Popelka, Vít Záhlava y Jan Vobecký. "Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics". Solid State Phenomena 242 (octubre de 2015): 421–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.421.
Texto completoCha, Kwang-Hyung, Chang-Tae Ju y Rae-Young Kim. "Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application". Energies 13, n.º 20 (14 de octubre de 2020): 5351. http://dx.doi.org/10.3390/en13205351.
Texto completoTreu, M., R. Rupp, P. Blaschitz y J. Hilsenbeck. "Commercial SiC device processing: Status and requirements with respect to SiC based power devices". Superlattices and Microstructures 40, n.º 4-6 (octubre de 2006): 380–87. http://dx.doi.org/10.1016/j.spmi.2006.09.005.
Texto completoDas, Mrinal K., Joseph J. Sumakeris, Brett A. Hull y Jim Richmond. "Evolution of Drift-Free, High Power 4H-SiC PiN Diodes". Materials Science Forum 527-529 (octubre de 2006): 1329–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1329.
Texto completoNagao, Shijo, Hirofumi Fujita, Akio Shimoyama, Shinya Seki, Hao Zhang y Katsuaki Suganuma. "Power cycle reliability of SiC devices with metal-sinter die-attach and thermostable molding". International Symposium on Microelectronics 2017, n.º 1 (1 de octubre de 2017): 000008–12. http://dx.doi.org/10.4071/isom-2017-tp12_024.
Texto completoGreen, Ronald, Aivars J. Lelis, Mooro El y Daniel B. Habersat. "Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs". Materials Science Forum 821-823 (junio de 2015): 677–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.677.
Texto completoRyu, Sei Hyung, Brett A. Hull, Sarit Dhar, L. Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das et al. "Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs". Materials Science Forum 645-648 (abril de 2010): 969–74. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.969.
Texto completoHatakeyama, Tetsuo, Kyoichi Ichinoseki, N. Higuchi, Kenji Fukuda y Kazuo Arai. "Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System". Materials Science Forum 600-603 (septiembre de 2008): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.553.
Texto completoBrinkfeldt, K., T. Åklint, C. Sandberg, P. Johander y D. Andersson. "High Temperature Packaging for SiC Power Transistors". International Symposium on Microelectronics 2012, n.º 1 (1 de enero de 2012): 001124–30. http://dx.doi.org/10.4071/isom-2012-thp36.
Texto completoLarkin, D. J. "An Overview of SiC Epitaxial Growth". MRS Bulletin 22, n.º 3 (marzo de 1997): 36–41. http://dx.doi.org/10.1557/s0883769400032747.
Texto completoScofield, James D., Hiroyuki Kosai, Brett Jordan, Sei Hyung Ryu, Sumi Krishnaswami, Fatima Husna y Anant K. Agarwal. "High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs". Materials Science Forum 556-557 (septiembre de 2007): 991–94. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.991.
Texto completoKaminski, Nando. "Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing". Materials Science Forum 924 (junio de 2018): 805–10. http://dx.doi.org/10.4028/www.scientific.net/msf.924.805.
Texto completoLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen y John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout". Materials Science Forum 924 (junio de 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Texto completoChao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via y John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz". MRS Advances 1, n.º 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.
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