Tesis sobre el tema "SiC power device"
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Yang, Nanying. "Characterization and modeling of silicon and silicon carbide power devices". Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/29643.
Texto completoPh. D.
Chen, Zheng. "Electrical Integration of SiC Power Devices for High-Power-Density Applications". Diss., Virginia Tech, 2013. http://hdl.handle.net/10919/23923.
Texto completoPh. D.
Phankong, Nathabhat. "Characterization of SiC Power Transistors for Power Conversion Circuits Based on C-V Measurement". 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/126807.
Texto completoBertilsson, Kent. "Simulation and Optimization of SiC Field Effect Transistors". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-81.
Texto completoSilicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models than the drift-diffusion and hydrodynamic models most commonly used at present.
The Monte Carlo method is the most accurate physical methods available and has been used in this work to study the performance in short-channel SiC field-effect devices. The drawback of the Monte-Carlo method is the computational power required and it is thus not well suited for device design where the layout requires to be optimized for best device performance. One approach to reduce the simulation time in the Monte Carlo method is to use a time-domain drift-diffusion model in contact and bulk regions of the device. In this work, a time-domain drift-diffusion model is implemented and verified against commercial tools and would be suitable for inclusion in the Monte-Carlo device simulator framework.
Device optimization is traditionally performed by hand, changing device pa-rameters until sufficient performance is achieved. This is very time consuming work without any guarantee of achieving an optimal layout. In this work a tool is developed, which automatically changes device layout until optimal device per-formance is achieved. Device optimization requires hundreds of device simulations and thus it is essential that computationally efficient methods are used. One impor-tant physical process for RF power devices is self heating. Self heating can be fairly accurately modeled in two dimensions but this will greatly reduce the computa-tional speed. For realistic influence self heating must be studied in three dimensions and a method is developed using a combination of 2D electrical and 3D thermal simulations. The accuracy is much improved by using the proposed method in comparison to a 2D coupled electro/thermal simulation and at the same time offers greater efficiency. Linearity is another very important issue for RF power devices for telecommunication applications. A method to predict the linearity is imple-mented using nonlinear circuit simulation of the active device and neighboring passive elements.
Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits". 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.
Texto completoLee, Sang Kwon. "Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3335.
Texto completoSilicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. Among them,one of the most important and critical factors is the formationof low resistivity Ohmic contacts and high-temperature stableSchottky diodes on silicon carbide.
In this thesis, different metals (TiW, Ti, TiC, Al, and Ni)and different deposition techniques (sputtering andevaporation) were suggested and investigated for this purpose.Both electrical and material characterizations were performedusing various techniques, such as I-V, C-V, RBS, XRD, XPS,LEED, SEM, AFM, and SIMS.
For the Schottky contacts to n- and p-type 4H-SiC, sputteredTiW Schottky contacts had excellent rectifying behavior afterannealing at 500 ºC in vacuum with a thermally stableideality factor of 1.06 and 1.08 for n- and p-type,respectively. It was also observed that the SBH for p-type SiC(ΦBp) strongly depends on the choice the metal with alinear relationship ΦBp= 4.51 - 0.58Φm, indicating no strong Fermi-level pinning.Finally, the behavior of Schottky diodes was investigated byincorporation of size-selected Au nano-particles in Ti Schottkycontacts on silicon carbide. The reduction of the SBH isexplained by using a simple dipole layer approach, withenhanced electric field at the interface due to the small sizeof the circular patch (Au nano-particles) and large differenceof the barrier height between two metals (Ti and Au) on both n-and p-SiC.
For the Ohmic contacts, titanium carbide (TiC) was used ascontacts to both n- and p-type 4H-SiC epilayers as well as onAl implanted layers. The TiC contacts were epitaxiallydeposited using a co-evaporation method with an e-beam Tisource and a Knudsen cell for C60, in a UHV system at low substrate temperature(500 ºC). In addition, we extensively investigatedsputtered TiW (weight ratio 30:70) as well as evaporated NiOhmic contacts on both n- and p-type epilayers of SiC. The bestOhmic contacts to n-type SiC are annealed Ni (>950ºC)with the specific contact resistance of ≈ 8× 10-6Ω cm2with doping concentration of 1.1 × 10-19cm-3while annealed TiW and TiC contacts are thepreferred contacts to p-type SiC. From long-term reliabilitytests at high temperature (500 ºC or 600 ºC) invacuum and oxidizing (20% O2/N2) ambient, TiW contacts with a platinum cappinglayer (Pt/Ti/TiW) had stable specific contact resistances for>300 hours.
Keywords: silicon carbide, Ohmic and Schottky contacts,co-evaporation, current-voltage, capacitance-voltagemeasurement, power devices, nano-particles, Schottky barrierheight lowering, and TLM structures.
Yue, Naili. "Planar Packaging and Electrical Characterization of High Temperature SiC Power Electronic Devices". Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36278.
Texto completoMaster of Science
Sekar, Saalini Valli. "Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz". [Ames, Iowa : Iowa State University], 2008.
Buscar texto completoWatt, Grace R. "Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module". Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/96559.
Texto completoMaster of Science
This paper describes the design, construction, and testing of advanced power devices for use in electric vehicles. Power devices are necessary to supply electricity to different parts of the vehicle; for example, energy is stored in a battery as direct current (DC) power, but the motor requires alternating current (AC) power. Therefore, power electronics can alter the energy to be delivered as DC or AC. In order to carry more power, multiple devices can be used together just as 10 people can carry more weight than 1 person. However, because the devices are not perfect, there can be slight differences in the performance of one device to another. One device may have to carry more current than another device which could cause failure earlier than intended. In this research project, multiple power devices were placed into a package, or "module." In a control module, the devices were selected with similar properties to one another. In an experimental module, the devices were selected with properties very different from one another. It was determined that the when the devices were 17.7% difference, there was 119.9 µJ more energy loss and it was 22.2°C hotter than when the difference was only 0.6%. However, the severity of the difference was dependent on how multiple device characteristics interacted with one another. It may be possible to compensate some of the impact of device differences in one characteristic with opposing differences in another device characteristic.
BHADRI, PRASHANT R. "IMPLEMENTATION OF A SILICON CONTROL CHIP FOR Si/SiC HYBRID OPTICALLY ACTIVATED HIGH POWER SWITCHING DEVICE". University of Cincinnati / OhioLINK, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1021402169.
Texto completoBhadri, Prashant R. "Implementation of a silicon control chip for a Si/SiC hybrid optically activated high power switching device". Cincinnati, Ohio : University of Cincinnati, 2002. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1021402169.
Texto completoLee, Hyung-Seok. "High power bipolar junction transistors in silicon carbide". Licentiate thesis, Stockholm, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3854.
Texto completoSiraj, Ahmed Shahnewaz. "Impact of Repetitive Short Circuit Transients on the Conducted Electromagnetic Interference of SiC and Si Based Power Devices". Miami University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=miami1622056294414037.
Texto completoBaker, Victoria Isabelle. "3D Commutation-Loop Design Methodology for a SiC Based Matrix Converter run in Step-up mode with PCB Aluminum Nitride Cooling Inlay". Thesis, Virginia Tech, 2021. http://hdl.handle.net/10919/104361.
Texto completoMaster of Science
In the United States, 40% primary energy consumption comes from electricity generation, which is the fastest growing form of end-use energy. Industries such as commercial airlines are increasing their use of electric energy, while phasing out the mechanical and pneumatic aircraft components, as they offer better performance and lower cost. Thus, implementation of high efficiency, electrical system can reduce energy consumption, fuel consumption and carbon emissions [1]. As more systems rely on this electric power, the conversion from one level of power (voltage and current) to another, is critical. In the quest to develop high efficiency power converters, wide bandgap semiconductor devices are being turned to. These devices, specifically Silicon Carbide (SiC) devices, offer high temperature and high voltage operation that a traditional Silicon (Si) device cannot. Coupled with fast switching transients, these metal oxide semiconductors field effect transistors (MOSFETs), could provide higher levels of efficiency and power density. This work investigates the benefits of a three-dimensional (3D) printed circuit board (PCB) layout. With this type of layout, a critical parasitic – inductance – can be minimized. As the SiC device can operate at high switching speeds, they incur higher di/dt, and dv/dt slew rates. If trace inductance is not minimal, overshoots and ringing will occur. This can be addressed by stacking PCB traces on top of one another, the induced magnetic field can be reduced. In turn, the system inductance is lowered as well. The reduction of this parameter in the system, reduces the overshoot and ringing. This particular work applies this technique to a 15kW matrix converter. This converter poses a particular design challenge as there are a large number of devices, which can lead to longer, higher inductance PCB traces. The goal of this work is to minimize the parasitic inductance in this converter for high efficiency, high power density operation.
Mogniotte, Jean-François. "Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance". Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0004/document.
Texto completoThe new SiC power switches is able to consider power converters, which could operate in harsh environments as in High Voltage (> 10kV) and High Temperature (> 300 °C). Currently, they are no specific solutions for controlling these devices in harsh environments. The development of elementary functions in SiC is a preliminary step toward the realization of a first demonstrator for these fields of applications. AMPERE laboratory (France) and the National Center of Microelectronic of Barcelona (Spain) have elaborated an elementary electrical compound, which is a lateral dual gate MESFET in Silicon Carbide (SiC). The purpose of this research is to conceive a monolithic power converter and its driver in SiC. The scientific approach has consisted of defining in a first time a SPICE model of the elementary MESFET from electric characterizations (fitting). Analog functions as : comparator, ring oscillator, Schmitt’s trigger . . . have been designed thanks to this SPICE’s model. A device based on a bridge rectifier, a regulated "boost" and its driver has been established and simulated with the SPICE Simulator. The converter has been sized for supplying 2.2 W for an area of 0.27 cm2. This device has been fabricated at CNM of Barcelona on semi-insulating SiC substrate. The electrical characterizations of the lateral compounds (resistors, diodes, MESFETs) checked the design, the "sizing" and the manufacturing process of these elementary devices and analog functions. The experimental results is able to considerer a monolithic driver in Wide Band Gap. The prospects of this research is now to realize a fully integrated power converter in SiC and study its behavior in harsh environments (especially in high temperature > 300 °C). Analysis of degradation mechanisms and reliability of the power converters would be so considerer in the future
Gammon, P. M. "Development of SiC heterojunction power devices". Thesis, University of Warwick, 2011. http://wrap.warwick.ac.uk/44625/.
Texto completoSadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.
Texto completoKiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre.
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Tappin, Peter G. R. "Design and development of SIC power devices". Thesis, University of Newcastle Upon Tyne, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.514463.
Texto completoMelkonyan, Ashot. "High efficiency power supply using new SiC devices". Kassel Kassel Univ. Press, 2006. http://www.uni-kassel.de/hrz/db4/extern/dbupress/publik/abstract.php?978-3-89958-302-1.
Texto completoMelkonyan, Ashot. "High efficiency power supply using new SiC devices". Kassel : Kassel Univ. Press, 2007. http://d-nb.info/989832031/34.
Texto completoBhatnagar, Praneet. "Development of high power devices using silicon carbide (SiC)". Thesis, University of Newcastle Upon Tyne, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.436161.
Texto completoGuo, Wilson. "CONDUCTED EMISSION STUDY ON SI AND SIC POWER DEVICES". Miami University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=miami1557701342593551.
Texto completoChen, Cheng. "Studies of SiC power devices potential in power electronics for avionic applications". Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLN045.
Texto completoMy PhD work in laboratories SATIE of ENS de Cachan and Ampère of INSA de Lyon is a part of project GEstioN OptiMisée de l’Energie (GENOME) to investigate the potential of some Silicon carbide (SiC) power devices (JFET, MOSFET and BJT) in power electronic converters dedicated to aeronautical applications for the development of more electric aircraft.The first part of my work investigates the robustness of MOSFET and SiC BJT subjected to short circuit. For SiC MOSFETs, under repetition of short-term short circuit, a gate leakage current seems to be an indicator of aging. We define repetitive critical energy to evaluate the robustness for repetition of short circuit. The effect of room temperature on the robustness of SiC MOSFET and BJT under short circuit stress is not evident. The capability of short circuit is not improved by reducing gate leakage current for MOSFET, while BJT shows a better robustness by limiting base current. For MSOFET, a significant increase in gate leakage current accelerates failure for DC voltage from 600V to 750V. After opening Rohm MOSFETs with a short circuit between gate and source after failure, the fusion of metallization is considered as the raison of failure. In this particular mode of failure, the short circuit between gate and source self-protects the chip and opens drain short current.The second part of the thesis is devoted to the study of SiC JFET, MSOFET and BJT in avalanche mode. The SemiSouth JFET and Fairchild BJT exhibit excellent robustness in the avalanche. On the contrary, the avalanche test reveals the fragility of Rohm MOSFET since it failed before entering avalanche mode. The failure of Rohm MOSFET and its low robustness in avalanche mode are related to the activation of parasitic bipolar transistor. The avalanche current is a very small part of the current in the inductor. It flows from the drain/collector to the gate/base to drive the transistor in linear mode. A high-value gate resistance effectively reduces the avalanche current through the drain-gate junction to the JFET.The third part of this thesis concerns the study of switching performance of SiC BJT at high switching frequency. We initially attempted to validate the switching loss measurements. After checking the accuracy of the electrical measurement compared to calorimetric measurement, electrical measurement is adopted for switching power losses but requires a lot of attention. Thanks to high carrier charge mobility of SiC material, SiC BJT does not require the use of anti-saturation diode. Finally, no significant variation in switching losses is observed over an ambient temperature range from 25°C to 200°C.The fourth part focuses on the study of SiC MOSFET behavior under HTB (High Temperature Reverse Bias) and in diode-less application in which the transistors conduct a reverse current through the channel, except for the dead time during which the body diode ensure the continuity of the current in the load. The results show that the body diode has no significant degradation when the reverse conduction of the MOSFET. Cree MOSFET under test shows a drift of the threshold voltage and a degradation of the gate oxide which are more significant during the tests in the diode-less application than under HTRB test. The drift of the threshold voltage is probably due to intense electric field in the oxide and the charge traps in the gate oxide
ul, Hassan Jawad. "Epitaxial Growth and Characterization of SiC for High Power Devices". Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17440.
Texto completoKiselkarbid (SiC) är en halvledare med överlägsna materialegenskaper, stort bandgap, hög termisk konduktivitet, hög kritisk fältstyrka och hög elektron mobilitet. Dessa gör den till ett utmärkt material för unipolära och bipolära komponenter som kan användas vid höga temperaturer, höga spänningar och höga strömmar. Trots stora framsteg under de senaste åren inom SiC bulk tillväxt, är material kvalitén hos bulk material fortfarande inte tillräckligt bra för att användas för aktiva skikt i komponenterna. Dessutom är dopning av materialet genom diffusion vid höga temperaturer inte möjligt, medan dopning via jonimplantation ger upphov till stora skador i kristallstrukturen. Därför behövs epitaxiell tillväxt av de aktive skikten i SiC baserade komponenter, för att fullt kunna utnyttja materialets egenskaper. Horisontell CVD (Hot-Wall Chemical Vapor Deposition) är en av de bästa tekniker att producera epitaxiella skikt med hög kvalité, där kompletta komponent strukturer med olika dopnings typ och koncentrationer kan växas i samma körning. SiC existerar i många polytyper och för att bibehålla polytype stabiliteten under tillväxt, används substrat med lutande kristallplan för använda s.k. step-flow tillväxt. En stor nackdel med substrat med lutande kristallplan är dock att dislokationer i basalplanet kommer att propagera från substratet in i det epitaxiella skiktet under tillväxten. Dessa dislokationer är den huvudsakliga orsaken till den degradering av bipolära komponenter som uppstår då höga strömmar går igenom komponenten. Den bipolära degraderingen orsakas av expanderade staplingsfel, som successivt ökar resistansen och slutligen förstörs komponenten. Strukturella defekter som replikeras från substratet är ofta även orsaken till kritiska defekter som skapas i det epitaxiella skiktet under tillväxt. I den här avhandlingen har vi utvecklat en epitaxiell som minskar problemet med basalplans dislokationer och bipolär degradering. Vi har även studerat egenskaper hos de epitaxiella skikten med fokus på morfologiska och strukturella defekter. Tekniken att hindra dislokationerna att replikeras in i de epitaxiella skikten bygger på att använda substrat utan lutning hos kristallplanen, s.k. on-axis substrat. Det hittills stora problemet med att växa på on-axis substrat har varit svårigheterna att bibehålla polytyp stabiliteten och undvika framförallt 3C polytyp inklusioner. Första försöken (Papper 1) försöken att växa epitaxi på on-axis substrat på Si sidan visade att 3C inklusionerna alltid startade i början av tillväxten för att sedan sprida sig lateralt under den fortsatta tillväxten. Vi kunde också visa att strukturella defekter som mikropipor, eller kluster av skruv- eller kant- dislokationer inte orsakade 3C inklusionerna. Den dominerande orsaken till 3C inklusionerna var istället skador eller repor på substratets yta. För att förbättra ytan innan den epitaxiella tillväxten studerade vi olika in-situ etsningar av ytan (Papper 2), och vi fann att etsning under Si dominerande förhållanden effektivast tog bort de flesta skador på substratets yta och gav en yta med minst ojämnheter. Dessutom skapades en homogen fördelning av atomära steg på ytan, och denna förbehandling användes sedan inför den epitaxiella tillväxten. Genom att dessutom optimera tillväxt förhållandena i inledningen av tillväxten kunde vi till 100% bibehålla samma polytyp från substratet in i det epitaxiella skiktet för hela 2” substrat (Papper 3). Enkla bipolära PiN dioder tillverkades och testades med avseende på bipolär degradering och mer än 70% av dioderna (Papper 4) visade ett stabilt framspänningsfall vid höga strömtätheter. Kraftkomponenter för höga spänningar kräver tjocka epitaxiella skikt med låg dopning. Dessutom, för höga strömmar krävs komponenter med stor aktiv area där kravet på lägre defekt täthet blir allt viktigare. Vi har i detalj studerat tillväxt och egenskaper av tjocka skikt (Papper 5), och funnit att de flesta material egenskaperna är stabila vid tillväxt av över 100 mm tjocka skikt i vår horisontella CVD reaktor. Vi har även i detalj studerat uppkomst och egenskaper av en av de mest kritiska epitaxiella defekterna, dem s.k. moroten (Papper 6). Speciellt har vi studerat dess uppkomst i relation till strukturella defekter i substratet. Vi har även studerat ända epitaxiella defekter i form av olika typer av staplingsfel (Papper 7), som även dessa har stor inverkan på komponenter. Livstiden för minoritetsladdningsbärarna är en viktig egenskap hos speciellt bipolära komponenter. I (Papper 8) har vi studerat hur denna påverkas av strukturella defekter i de epitaxiella skikten. Vi har använt en unik mätmetod för att optiskt kunna mäta över hela skivor, med hög upplösning. Mätningarna har lyckats påvisa hur olika strukturella defekter påverkar livstiden, och även kunnat visa på förekomsten av defekter som inte har upptäckts med andra mätmetoder.
Melk'onyan, Ašot Aġasow [Verfasser]. "High efficiency power supply using new SiC devices / Ashot Melkonyan". Kassel : Kassel Univ. Press, 2007. http://d-nb.info/989832031/34.
Texto completoDiMarino, Christina Marie. "High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors". Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/78116.
Texto completoMaster of Science
Yano, Hiroshi. "Control of Electronic Characteristics at SiO_2/SiC Interface for SiC Power Metal-Oxide-Semiconductor Devices". 京都大学 (Kyoto University), 2001. http://hdl.handle.net/2433/150681.
Texto completoLi, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters". Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.
Texto completoCompared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe
Wang, Cai Johnson R. Wayne. "High temperature high power SiC devices packaging processes and materials development". Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Spring/doctoral/WANG_CAI_24.pdf.
Texto completoXu, Jing. "Technology for Planar Power Semiconductor Devices Package with Improved Voltage Rating". Diss., Virginia Tech, 2008. http://hdl.handle.net/10919/26373.
Texto completoPh. D.
Sun, Keyao. "Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC Devices". Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/103743.
Texto completoDoctor of Philosophy
The wide bandgap semiconductor enables next-generation power electronics systems with higher efficiency and higher power density which will reduce the space, weight, and cost for power supply and conversion systems, especially for renewable energy. However, by pushing the system voltage level higher to medium-voltage of tens of kilovolts, although the system has higher efficiency and simpler control, the reliability drops. This dissertation, therefore, focusing on solving the possible overcurrent, overvoltage, and gate failure issues of the power electronics system that is caused by the high voltage and high electromagnetic interference environment. By utilizing the inductance of the device, a dual-protection method is proposed to prevent the overcurrent problem. The overcurrent fault can be detected within tens of nanoseconds so that the device will not be destroyed because of the huge fault current. When multiple devices are connected in series to hold higher voltage, the voltage sharing between different devices becomes another issue. The proposed modeling and control method for series-connected devices can balance the shared voltage, and make the control system stable so that no overvoltage problem will happen due to the non-evenly distributed voltages. Besides the possible overcurrent and overvoltage problems, losing control of the devices due to the unreliable auxiliary power supply is another issue. This dissertation proposed a scalable auxiliary power network with high efficiency, high immunity to electromagnetic interference, and high reliability. In this network, a wireless power transfer converter is designed to provide enough insulation and isolation capability, while a switched capacitor converter is designed to transfer voltage from several kilovolts to tens of volts. With the proposed overcurrent protection method, voltage sharing control, and reliable auxiliary power network, systems utilizing medium-voltage wide-bandgap semiconductor will have higher reliability to be implemented for different applications.
Negoro, Yuki. "Ion implantation and embedded epitaxial growth for 4H-SiC power electronic devices". 京都大学 (Kyoto University), 2005. http://hdl.handle.net/2433/144921.
Texto completoLyu, Xintong. "Power Module Design and Protection for Medium Voltage Silicon Carbide Devices". The Ohio State University, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu160856011259485.
Texto completoJahdi, Saeed. "Analysis of dynamic performance and robustness of silicon and SiC power electronics devices". Thesis, University of Warwick, 2016. http://wrap.warwick.ac.uk/82110/.
Texto completoTornblad, Olof. "Physical modeling of on-state losses in bipolar Si and SiC power devices /". Stockholm, 1998. http://www.lib.kth.se/abs98/torn0515.pdf.
Texto completoDanno, Katsunori. "Epitaxial growth of 4H-SiC and characterization of deep levels for bipolar power devices". 京都大学 (Kyoto University), 2007. http://hdl.handle.net/2433/136192.
Texto completoBaker, Bryant. "A 3.6 GHz Doherty Power Amplifier with a 40 dBm Saturated Output Power using GaN on SiC HEMT Devices". PDXScholar, 2014. https://pdxscholar.library.pdx.edu/open_access_etds/1781.
Texto completoBajwa, Adeel Ahmad [Verfasser] y Jürgen [Akademischer Betreuer] Wilde. "New assembly and packaging technologies for high-power and high-temperature GaN and SiC devices". Freiburg : Universität, 2015. http://d-nb.info/1119327814/34.
Texto completoLai, Rixin. "Analysis and Design for a High Power Density Three-Phase AC Converter Using SiC Devices". Diss., Virginia Tech, 2008. http://hdl.handle.net/10919/30155.
Texto completoPh. D.
Ning, Puqi. "Design and Development of High Density High Temperature Power Module with Cooling System". Diss., Virginia Tech, 2010. http://hdl.handle.net/10919/27766.
Texto completoPh. D.
Tsai, Kaichien. "EMI Modeling and Characterization for Ultra-Fast Switching Power Circuit Based on SiC and GaN Devices". The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1385983252.
Texto completoYan, Ning. "High-frequency Current-transformer Based Auxiliary Power Supply for SiC-based Medium Voltage Converter Systems". Thesis, Virginia Tech, 2020. http://hdl.handle.net/10919/101507.
Texto completoM.S.
Recently, 10 kV silicon carbide (SiC) MOSFET receives strong attention for medium voltage applications. Asit can switch at very high speed, e.g. > 50 V/ns, the converter system can operate at higher switching frequency condition with very small switching losses compared to silicon (Si) IGBT [8]. However, the fast dv/dt noise also creates the common mode current via coupling capacitors distributed inside the converter system, thereby introducing lots of electromagnetic interference (EMI) issues. Such issues typically occur within the gate driver power supplies due to the high dv/dt noises across the input and output of the supply. Therefore, the ultra-small coupling capacitor (<5 pF) of a gate driver power supply is strongly desired.[37] To satisfy the APS demands for high power modular converter system, a solution is proposed in this thesis. This work investigates the design of 1 MHz isolated APS using gallium nitride (GaN) devices with medium voltage insulation reinforcement. By increasing switching frequency, the overall converter size could be reduced dramatically. To achieve a low Ccm value and medium voltage insulation of the system, a current-based transformer with a single turn on the sending side is designed. By adopting LCCL-LC resonant topology, a current source is formed as the output of sending side circuity, so it can drive multiple loads importantly with a maximum of 120 W. At the same time, ZVS can use realized with different load conditions. The receiving side is a regulated stage, so the output voltage can be easily adjusted and it can operate in a load fault condition. Different insulation solutions will be introduced and their effect on Ccm will be discussed. To further reduce Ccm, shielding will be introduced. Overall, this proposed APS can achieve a breakdown voltage of over 20 kV and PDIV up to 16.6 kV with Ccm<5 pF. Besides, multi-load driving ability is able to achieve with a maximum of 120 W. ZVS can be realized. In the end, the experiment results will be provided.
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
Alves, rodrigues Luis Gabriel. "Design and characterization of a three-phase current source inverter using 1.7kV SiC power devices for photovoltaic applications". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT030.
Texto completoClassically, the energy conversion architecture found in photovoltaic (PV) power plants comprises a multitude of solar arrays delivering a maximum voltage of 1kV followed by a step-up chopper connected to a three-phase voltage source inverter. This two-stage conversion system (DC/DC + DC/AC) is then connected to the MV grid through a LV/MV transformer. In order to simplify the PV systems, this research work focuses on the study and implementation of a DC/AC topology employing a single conversion stage: the three-phase current source inverter (CSI). Although relatively simple, the CSI presents as major drawback the conduction losses. To deal with this problem, wide-bandgap silicon carbide (SiC) semiconductors are used, which allows to efficiently convert energy (η> 98.5%) while keeping a relatively high switching frequency (several tens of kHz). Nonetheless, since the available power semiconductor modules on the market are not compatible with the CSI, a novel 1.7kV SiC-based module is developed in the context of the thesis. Thus, the dynamic characterization of the new SiC device is carried out and serves as a basis for the design of a 60kW Current Source Inverter prototype. Finally, the inverter’s semiconductor efficiency is evaluated through a calorimetric method, confirming the ability of the topology to operate at higher switching frequencies. At the present time, little research has been conducted on the CSI implementation with SiC devices. The originality of this work lies mainly in the design, characterization and implementation of the new SiC power module adapted to this well-known inverter topology
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
Sejil, Selsabil. "Optimisation de l'épitaxie VLS du semiconducteur 4H-SiC : Réalisation de dopages localisés dans 4H-SiC par épitaxie VLS et application aux composants de puissance SiC". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSE1170/document.
Texto completoThe objective of the VELSIC project has been to demonstrate the feasibility of 1 µm deep p+/n- junctions with high electrical quality in 4H-SiC semiconductor, in which the p++ zone is implemented by an original low-temperature localized epitaxy process ( 1100 - 1200 °C ), performed in the VLS (Vapor - Liquid - Solid) configuration. This innovative epitaxy doping technique uses the monocrystalline SiC substrate as a crystal growth seed. On the substrate (0001-Si) surface, buried patterns of Al - Si stack are fused to form liquid islands which are fed with carbon by C3H8 in the gas phase. This method is investigated as a possible higher performance alternative to the ion implantation process, currently used by all manufacturers of SiC devices, but which still experiences problematic limitations that are yet unresolved to date. Although the main focus of the study has been set on the optimization of localized VLS epitaxy, our works have explored and optimized all the facets of the complete process of test diodes, from the etching of patterns in the SiC substrate up to the electrical I - V characterization of true pn diodes with ohmic contacts on both sides.Our results have confirmed the need to limit the growth rate down to 1 µm/h to maintain good crystallinity of the epitaxial material. It has also highlighted the direct action of the radiofrequency electromagnetic field on the liquid phase, leading to a very strong influence of the diameter of the etched patterns on the thickness of the deposited SiC. A nearly complete filling of the 1 µm deep trenches with very high p++ doping has been demonstrated. Using optimized VLS growth parameters, p+/n- diode demonstrators have been processed and tested. On the best samples, without passivation or peripheral protection, high direct-current threshold voltages, between 2.5 and 3 V, were measured for the first time without any high-temperature annealing after epitaxy. These threshold voltage values correspond to the expected values for a true p-n junction on 4H-SiC. Current densities of several kA/cm2 have also been injected at voltages around 5 - 6 V. Under reverse bias conditions, no breakdown is observed up to 400 V and low leakage current densities at low electric field, in the range 10 - 100 nA/cm2, have been measured. All these advances align with or exceed state-of-the-art results for such simple SiC devices, obtained using any doping technique
Namayantavana, Sanaz. "Reliability Study of SiC-Based Power Electronic Devices in DC-DC Converter Used in Heavy-Duty Electric and Hybrid Vehicles". Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-235192.
Texto completoEn DC-DC-omvandlare används i elektrifierade fordon för att ge ström åt dess lågspänningssystem (ex. 24V) vilket kan omfatta bl.a. inklusive strålkastare, horn, luftkonditioneringssystem, vindrutetorkare, radio etc. Omvandlaren matas från fordonets högspänningsbatteri (ex 650VDC) och överför en relativt hög ef- fekt till lågspänningssystemet. SCANIAs befintliga omvandlare använder sig av kiselbaserade transistorer (Si IGBT), och det finns en avsikt att ersätta omvandlaren med en uppgraderad motsvarighet vid vilken kiselkarbidbaserade transistorer (SiC MOSFET) används istället. SiC-baserade halvledarmaterial erbjuder bl.a. möjlighet till högre switch-frekvenser, högre drifttemperatur och högre spänningstålighet. I denna avhandling utreds tillförlitligheten av SiC-baserade transistorer som används i DC-DC-omvandlare inom elektrifier- ade fordonsbranschen. Undersökningen baseras huvudsakligen på resultat från olika tillförlitlighetstester utförda på både transistor- och omvandlarnivå. För att undersöka och analysera tillförlitligheten hos SiC MOSFET-transistorer har olika felmekanismer såsom nedbrytning av ”gate oxid”-skiktet, högfrekventa biverkningar, etc., presenterats och diskuterats tillsammans med motsvarande testresultat. För jämförelse har man på omvandlarnivå, utrett tillförlitligheten av Scania’s befintliga omvandlare och identifierat dess svaga komponenterna. I denna studie har testresultaten, som tillhandahålls av leverantörer av SiC- MOSFET transistorer, analyserats och jämförts med liknande testresultat som har genomförts på Si-baserade omvandlare. Utöver det utför Scania vissa speci- fika tester som är baserade på egna standardiserade prover, för att försäkra sig om omvandlarens mognad och robusthet. Dessa är relaterade till olika miljöförhållanden, t.ex. hög omgivningstemperatur och hög vibrationsnivå. Testresultaten presenteras och diskuteras i avhandlingen. Genom att jämföra testresultat från olika leverantörer kan man dra slutsatsen att SiC MOSFET-transistorer är effektivare än Si-transistorer. Dessutom visade sig att SiC MOSFET är mer robust och tillförlitlig i applikationer som kräver högre effekter, högre spänningar och högre switching-frekvenser. Den andra generationen av Scania’s DC-DC-omvandlare har visat flera förde- lar över den första generationen; nämligen att den är mer effektiv, lättare, mer kompakt och billigare. Från ett tillförlitlighetsperspektiv har den andra generationen har passerat nästan alla relevanta tester.
Casarin, Jérémy. "Caractérisation et mise en œuvre de composants SiC Haute Tension pour l'application transformateur moyenne fréquence en traction ferroviaire". Thesis, Toulouse, INPT, 2012. http://www.theses.fr/2012INPT0123/document.
Texto completoThe objective of the CONCIGI-HT project (Compact AC/DC converter with Integrated High Voltage Galvanic Insulation) is to increase the efficiency of traction drives while reducing the mass and volume of the AC/DC conversion. To do that, the part low-frequency transformer - rectifier is replaced by a multi-converter topology, directly connected to the high voltage power supply and incorporating medium frequency transformers (several kHz). This thesis relates more particularly to the characterization and implementation of high voltage semiconductors in conversion topologies with intermediate medium frequency link. The study is performed on the basis of a traction drive of 2 MW operating on a 25 kV/50 Hz power supply. The first chapter presents the state of the art of the Automotrice à Grande Vitesse (AGV) recently produced by ALSTOM. The traction drive of this vehicle is used as a reference for the study of new topologies with medium frequency transformer. The second chapter first describes the structure of a conventional traction drive and then presents two multicellular topologies with medium frequency transformer applicable to railway traction (the indirect structure with PWM rectifier and DC/DC resonant converter and the direct topology combining dual converters). The advantages and disadvantages of these topologies are highlighted. The third chapter deals with the implementation and soft switching characterization of 6.5 kV Silicon components in both topologies presented above. Two test benches, representing a basic conversion stage, as well as specific drivers dedicated to the soft switching, has been made. They allow the study of semiconductors in nominal operating conditions (3.6 kV / 100 A). The fourth chapter presents the implementation and characterization of silicon carbide components (SiC). For this, power modules based on 10 kV chips (MOSFET and Diodes) have been achieved. The experimental results obtained on test benches made in the previous chapter, show a significant reduction in losses and demonstrate the viability of the dual converter topology for a 25 kV/50 Hz application. The conclusion presents the first design of an elementary block and gains in mass and volume as well as the energy savings that can be achieved compared to a conventional structure
Grummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices". Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Texto completoPh.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Beydoun, Bilal. "Simulation et conception des transistors M. O. S. De puissance". Toulouse 3, 1994. http://www.theses.fr/1994TOU30163.
Texto completo