Literatura académica sobre el tema "Si/β-FeSi2"
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Artículos de revistas sobre el tema "Si/β-FeSi2"
Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa y Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, n.º 4 (4 de julio de 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.
Texto completoEguchi, Hajime, Motoki Iinuma, Hirofumi Hoshida, Naoki Murakoso y Yoshikazu Terai. "Growth of Sb-Doped β-FeSi2 Epitaxial Films and Optimization of Donor Activation Conditions". Defect and Diffusion Forum 386 (septiembre de 2018): 38–42. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.38.
Texto completoAkiyama, Kensuke, Hiroshi Funakubo y Masaru Itakura. "Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate". MRS Proceedings 1493 (2013): 189–94. http://dx.doi.org/10.1557/opl.2013.407.
Texto completoLi, Xiao Na, Bing Hu, Chuang Dong y Xin Jiang. "Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering". Materials Science Forum 561-565 (octubre de 2007): 1161–64. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1161.
Texto completoAkiyama, Kensuke, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie y Yoshihisa Matsumoto. "Synthesis and Photocatalytic Properties of Iron Disilicide/SiC Composite Powder". MRS Advances 2, n.º 8 (2017): 471–76. http://dx.doi.org/10.1557/adv.2017.221.
Texto completoTsunoda, Tatsuo, Masakazu Mukaida, Akio Watanabe y Yoji Imai. "Composition dependence of morphology, structure, and thermoelectric properties of FeSi2 films prepared by sputtering deposition". Journal of Materials Research 11, n.º 8 (agosto de 1996): 2062–70. http://dx.doi.org/10.1557/jmr.1996.0259.
Texto completoLin, X. W., Z. Liliental-Weber, J. Washburn, J. Desimoni y H. Bernas. "Formation of β-FeSi2, by thermal annealing of Fe-implanted (001) Si". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 de agosto de 1993): 808–9. http://dx.doi.org/10.1017/s0424820100149878.
Texto completoNanko, Makoto, Se Hun Chang, Koji Matsumaru, Kozo Ishizaki y Masatoshi Takeda. "Isothermal Oxidation of Sintered β-FeSi2 in Air". Materials Science Forum 522-523 (agosto de 2006): 641–48. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.641.
Texto completoVisotin, Maxim A., I. A. Tarasov, A. S. Fedorov, S. N. Varnakov y S. G. Ovchinnikov. "Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases". Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, n.º 3 (22 de mayo de 2020): 469–82. http://dx.doi.org/10.1107/s2052520620005727.
Texto completoAkiyama, Kensuke, Satoru Kaneko, Yasuo Hirabayashi y Hiroshi Funakubo. "Photoluminescence properties of Si/β-FeSi2/Si double heterostructure". Thin Solid Films 508, n.º 1-2 (junio de 2006): 380–84. http://dx.doi.org/10.1016/j.tsf.2005.07.353.
Texto completoTesis sobre el tema "Si/β-FeSi2"
Huang, Cheng-Yao y 黃鉦堯. "Analysis of the Responsivities and Quantum Efficiencies of the p-Si/ i-β-FeSi2 /n-Si Photodiodes". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6q38tu.
Texto completo義守大學
電子工程學系
106
In this paper the responsivities and quantum efficiencies of p-Si/i-β-FeSi2/n-Si double heterostructure photodiodes and p-Si/i-Si/n-Si photodiodes are investigated by using self-developed analytical methods. The dark current densities of β-FeSi2 and Si p-i-n photodiodes under reverse-bias condition are calculated by solving the diffusion current densities of minority carriers. The photocurrent densities of β-FeSi2 p-i-n photodiode under illumination with reverse-bias are calculated by solving the drift current densities in the depletion regions. When the β-FeSi2 p-i-n photodiode incident wavelength < 0.6um, the magnitudes of responsivities and quantum efficiencies are almost zero for different intrinsic thicknesses. The maximum responsivity, R=0.65 A/W, and quantum efficiency, =65%, are both at =1.2um and the intrinsic β-FeSi2 layer thickness is 100um.The calculated responsivity of Si p-i-n photodiode is consistent with the reported researches. Therefore, the analysis methods are valid in this work. These results indicate the high application potential of β-FeSi2 as near-infrared photodiodes integrated with Si.
Tsai, Yi-Wei y 蔡一葦. "Studies of Strain Field of β - FeSi2 / Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffraction". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23528057967960707147.
Texto completoCapítulos de libros sobre el tema "Si/β-FeSi2"
Schaaf, P., M. Milosavljevic, S. Dhar, N. Bibic, K. P. Lieb, M. Wölz y G. Principi. "Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers". En Industrial Applications of the Mössbauer Effect, 615–21. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0299-8_67.
Texto completoYamauchi, S., H. Ohshima, T. Hattori, M. Kasaya, M. Hirai, M. Kusaka, M. Iwami, Y. Kamiura y F. Hashimoto. "Preparation and Electronic Properties of Epitaxial β-FeSi2 on Si(111) Substrate". En Control of Semiconductor Interfaces, 377–82. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50070-5.
Texto completoKatsumata, Hiroshi, Hong-Lie Shen, Naoto Kobayashi, Yunosuke Makita, Masataka Hasegawa, Hajime Shibata, Shinji Kimura, Akira Obara y Shin-ichiro Uekusa. "Optical and structural properties of β-FeSi2 layers on Si fabricated by triple 56Fe ion implantations". En Ion Beam Modification of Materials, 943–46. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50187-8.
Texto completoMaltez, R. L., M. Behar y X. W. Lin. "Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si (100) at 320°C". En Ion Beam Modification of Materials, 400–403. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50076-9.
Texto completoShaban, Mahmoud y Tsuyoshi Yoshitake. "n-Type β-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering". En Advances in Photodiodes. InTech, 2011. http://dx.doi.org/10.5772/14775.
Texto completoActas de conferencias sobre el tema "Si/β-FeSi2"
Akiyama, K., M. Itakura y H. Funakubo. "Photoluminescence enhancement from β-FeSi2 on Ag-coated Si". En 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-8-9.
Texto completoMaeda, Yoshihito, Takahide Tatsumi, Yuki Kawakubo, Yuya Noguchi, Kosuke Morita, Hiroyuki Kobayashi y Kazumasa Narumi. "Enhancement of photoluminescence from Cu-doped β-FeSi2/Si heterostructures". En International Conference and Summer School on Advanced Silicide Technology 2014. Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/jjapcp.3.011108.
Texto completoGALKIN, N. G., E. A. CHUSOVITIN, K. N. GALKIN, T. S. SHAMIRSAEV, A. K. GUTAKOVSKI y A. V. LATYSHEV. "LIGHT EMITTING β-FeSi2 NANOCRYSTALS IN MULTILAYER Si/β-FeSi2NCS/Si/…/Si NANOHETEROSTRUCTURES GROWN BY SPE, RDE AND MBE TECHNIQUES". En Proceedings of International Conference Nanomeeting – 2011. WORLD SCIENTIFIC, 2011. http://dx.doi.org/10.1142/9789814343909_0036.
Texto completoMaeda, Yoshihito, Yoshikazu Terai y Masaru Itakura. "Crystal Growth and Photoresponse of Al-doped β-FeSi2 /Si Heterojunctions". En 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.d-9-3.
Texto completoTerai, Yoshikazu, Yoshihito Maeda, Kensuke Akiyama y Yasufumi Fujiwara. "Investigation of β-FeSi2/Si Heterostructures by Photoluminescence with Different Optical Configurations". En 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.e-4-3.
Texto completoGALKIN, N. G., D. L. GOROSHKO, A. S. GOURALNIK, V. O. POLYARNYI, S. V. VAVANOVA y I. V. LOUCHANINOV. "SILICON GROWTH ATOP β-FeSi2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES". En Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0034.
Texto completoBorun, A. F., N. P. Khmelnitskaja, Yu N. Parkhomenko, E. G. Polyakova y E. A. Vygovskaja. "The strain distribution in Si lattice of the layer containing β-FeSi2 precipitates". En SPIE Proceedings, editado por Kamil A. Valiev y Alexander A. Orlikovsky. SPIE, 2004. http://dx.doi.org/10.1117/12.557967.
Texto completoTakauji, Motoki, Cheng Li, Takashi Suemasu y Fumio Hasegawa. "Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy". En 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.d-9-1.
Texto completoTakahara, Motoki, Tarek M. Mostafa, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros y Tsuyoshi Yoshitake. "Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes". En International Conference and Summer School on Advanced Silicide Technology 2014. Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/jjapcp.3.011101.
Texto completoShevlyagin, A. V., D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotsenko, K. N. Galkin, N. G. Galkin et al. "Stress-induced indirect to direct band gap transition in β-FeSi2 nanocrystals embedded in Si". En ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING: FROM THEORY TO APPLICATIONS: Proceedings of the International Conference on Electrical and Electronic Engineering (IC3E 2017). Author(s), 2017. http://dx.doi.org/10.1063/1.4998036.
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