Literatura académica sobre el tema "Si (111) Substrates"
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Artículos de revistas sobre el tema "Si (111) Substrates"
Severino, Andrea, Ruggero Anzalone, Corrado Bongiorno, M. Italia, Giuseppe Abbondanza, Massimo Camarda, L. M. S. Perdicaro, Giuseppe Condorelli, Marco Mauceri y Francesco La Via. "Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si". Materials Science Forum 615-617 (marzo de 2009): 149–52. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.149.
Texto completoTsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang y Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications". Beilstein Journal of Nanotechnology 8 (15 de septiembre de 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.
Texto completoKoryakin, Alexander A., Sergey A. Kukushkin, Andrey V. Osipov, Shukrillo Sh Sharofidinov y Mikhail P. Shcheglov. "Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates". Materials 15, n.º 18 (6 de septiembre de 2022): 6202. http://dx.doi.org/10.3390/ma15186202.
Texto completoFerro, Gabriel, Taguhi Yeghoyan, François Cauwet, Stéphane Coindeau, Thierry Encinas y Véronique Soulière. "3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations". Materials Science Forum 1062 (31 de mayo de 2022): 23–27. http://dx.doi.org/10.4028/p-aaf11g.
Texto completoSadoh, Taizoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama y Masanobu Miyao. "SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator". Key Engineering Materials 470 (febrero de 2011): 8–13. http://dx.doi.org/10.4028/www.scientific.net/kem.470.8.
Texto completoZhao, Qiang, Michael Lukitsch, Jie Xu, Gregory Auner, Ratna Niak y Pao-Kuang Kuo. "Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining". MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 852–58. http://dx.doi.org/10.1557/s1092578300005172.
Texto completoIsshiki, Toshiyuki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki y Hideo Nakanishi. "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations". Materials Science Forum 600-603 (septiembre de 2008): 1317–20. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1317.
Texto completoHanda, Hiroyuki, Shun Ito, Hirokazu Fukidome y Maki Suemitsu. "Transmission-Electron-Microscopy Observations on the Growth of Epitaxial Graphene on 3C-SiC(110) and 3C-SiC(100) Virtual Substrates". Materials Science Forum 711 (enero de 2012): 242–45. http://dx.doi.org/10.4028/www.scientific.net/msf.711.242.
Texto completoLee, Dong Nyung. "Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates". Advanced Materials Research 26-28 (octubre de 2007): 623–28. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.623.
Texto completoGo, Hyun Young, Naoki Wakiya, Takanori Kiguchi, Tomohiko Yoshioka, Osamu Sakurai, Jeffrey S. Cross, M. Tanaka y Kazuo Shinozaki. "Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates". Key Engineering Materials 421-422 (diciembre de 2009): 111–14. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.111.
Texto completoTesis sobre el tema "Si (111) Substrates"
Nguyen, Van H. "Epitaxial growth of relaxed Ge buffers on (111) and (110) Si substrates using RP-CVD". Thesis, University of Warwick, 2012. http://wrap.warwick.ac.uk/50222/.
Texto completoHortamani, Mahboubeh. "Theory of adsorption, diffusion and spinpolarization of Mn on Si(001) and Si(111) substrates". [S.l.] : [s.n.], 2006. http://www.diss.fu-berlin.de/2006/588/index.html.
Texto completoWang, Yong. "Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD /". View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20WANGY.
Texto completoCurcella, Alberto. "Looking for silicene: studies of silicon deposition on metallic and semiconductor substrates". Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9314/.
Texto completoRouissi, Zied [Verfasser], Dieter [Akademischer Betreuer] Schmeißer, Ehrenfried [Akademischer Betreuer] Zschech y Christian [Akademischer Betreuer] Pettenkofer. "Role of substrates morphology and chemistry in ALD HfO₂ on Si(111)-H terminated surfaces as model / Zied Rouissi ; Dieter Schmeißer, Ehrenfried Zschech, Christian Pettenkofer". Cottbus : BTU Cottbus - Senftenberg, 2017. http://d-nb.info/1136904441/34.
Texto completoDestefanis, Vincent. "Dépôt et gravure en phase vapeur d'hétérostructures Si/SiGe sur substrats (100), (110) et (111)". Grenoble INPG, 2009. http://www.theses.fr/2009INPG0079.
Texto completoCVD deposition of Si/SiGe on (100), (110) and (111) substrates and their selective chemical vapour etch using HClhave been studied. The epitaxy of Si/SiGe has notably highlighted lower SiGe(110) growth rates and Ge(110) contents than on (100). Integration of (110) epitaxiallayers on patterned Si substrates has led to (110) Localized Silicon On Insulator devices with impressive hole mobility gains. Growth of thick, fully-relaxed SiGe virtual substrates has noticeably shown a high defectivity on (110) and (111). The high levels of strain obtained in (110) tensily strained Si layers seem however promising. The selective epitaxial growth of relaxed Ge(110) layers in narrow patterns has exhibited defects normal to the (110) surface and poor defect trapping. The HCI lateral selective etching of SiGe versus Si at high HCI pressure has improved (100) etch rates and selectivities. These technologically relevant (100) etching results contrast with the poor (110) etching selectivities obtained
Xu, Zhongjie y 徐忠杰. "Molecular beam epitaxial growth of GaN on Si(111) substrate". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45866338.
Texto completoTanaka, Shigeyasu, Yoshio Honda y Nobuhiko Sawaki. "Structural characterization of GaN laterally overgrown on a (111)Si substrate". American Institute of Physics, 2001. http://hdl.handle.net/2237/6985.
Texto completoAlbertini, David. "Etude par microscopie à effet tunnel du système SiH4-Si(111)7x7". Aix-Marseille 2, 1998. http://www.theses.fr/1998AIX22097.
Texto completoGuirleo, Guillaume. "Etude des propriétés électriques et optiques d'hétérostructures Si/CaF2 déposées sur des substrats de Si(111)". Phd thesis, Aix-Marseille 2, 2002. http://www.theses.fr/2002AIX22059.
Texto completoLibros sobre el tema "Si (111) Substrates"
Gariglio, S., M. S. Scheurer, J. Schmalian, A. M. R. V. L. Monteiro, S. Goswami y A. D. Caviglia. Surface and Interface Superconductivity. Editado por A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.7.
Texto completoCapítulos de libros sobre el tema "Si (111) Substrates"
Maissen, C., A. Sultan, S. Teodoropol y H. Zogg. "Thermal Mismatch Strain Relaxation of Epitaxial IV-VI Layers on Si(111) Substrates at Cryogenic Temperatures". En Monitoring of Gaseous Pollutants by Tunable Diode Lasers, 148. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2763-9_25.
Texto completoIto, Mikinori, Kazuaki Sawada y Makoto Ishida. "High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates". En Solid State Phenomena, 181–84. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.181.
Texto completoGuyot-Sionnest, P., P. Dumas, Y. J. Chabal y G. S. Higashi. "Lifetime of an Adsorbate Substrate Vibration: H on Si(111)". En Springer Series in Chemical Physics, 374–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-84269-6_114.
Texto completoNishiguchi, Taro, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima y Shigehiro Nishino. "Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate". En Materials Science Forum, 193–96. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.193.
Texto completoNakamura, Mitsutaka, Toshiyuki Isshiki, Taro Nishiguchi, Koji Nishio, Satoru Ohshima y Shigehiro Nishino. "Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate". En Materials Science Forum, 181–84. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.181.
Texto completoUeno, K., K. Saiki y A. Koma. "Fabrication of compound-semiconductor quantum dots on a Si(111) substrate terminated by bilayer-GaSe". En Springer Proceedings in Physics, 385–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_178.
Texto completoRao, B. V., D. Gruznev, T. Tambo y C. Tatsuyama. "Formation of first InSb molecular layer on Si(111) substrate: Role of In(4×1) reconstruction". En Springer Proceedings in Physics, 323–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_148.
Texto completoYao, Zhaohui, Tingjin Chen, Chaofeng Xia, Hairong Yuan, Jingtian Li, Hua Liao y Zuming Liu. "Influence of Substrate Temperature and Vacuum Annealing on the Structural Properties of CDTE(111)/Si(100) Thin Films". En Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1089–92. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_213.
Texto completoIsshiki, Toshiyuki, Mitsutaka Nakamura, Taro Nishiguchi, Koji Nishio, Satoru Ohshima y Shigehiro Nishino. "Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method". En Materials Science Forum, 185–88. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.185.
Texto completoSong, Jae Chul, D. H. Kang, Seon Ho Lee, Eun Su Jang, Dong Wook Kim, Kannappan Santhakumar y Cheul Ro Lee. "Growth of GaN Nano-Column on Si (111) Substrate Using Au+Ga Alloy Seeding by Pulsed Flow Method Using MOCVD". En Semiconductor Photonics: Nano-Structured Materials and Devices, 108–10. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.108.
Texto completoActas de conferencias sobre el tema "Si (111) Substrates"
Bairamis, A. I., A. Adikimenakis, A. O. Aijagunna, Th Kehagias, G. P. Dimitrakopulos, J. Kioseoglou, Ph Komninou, Ch Zervos, J. Kuzmik y A. Georgakilas. "Different polarities of InN (0001) heterostructures on Si (111) substrates". En 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998663.
Texto completoZolotukhin, Dmitry, Dmitry Goloshchapov, Pavel Seredin, Andrey Mizerov y Alexander Lenshin. "STUDY OF THE INFLUENCE OF THE SIC / POR-SI BUFFER LAYER ON THE STRUCTURAL, OPTICAL, AND TRANSPORT PROPERTIES OF GAN / SIC / SI (111) HETEROSTRUCTURES". En International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1576.silicon-2020/123-126.
Texto completoPau, Jose L., Elias Munoz Merino, Miguel A. Sanchez-Garcia y Enrico Calleja. "Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates". En Symposium on Integrated Optoelectronic Devices, editado por Gail J. Brown y Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467653.
Texto completoWosko, Mateusz, Bogdan Paszkiewicz, Tomasz Szymanski y Regina Paszkiewicz. "Different buffer approaches for AlGaN/GaN heterostructures epitaxy on Si(111) substrates". En 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2014. http://dx.doi.org/10.1109/asdam.2014.6998651.
Texto completoBarucca, G., Guiseppe Majni, Paolo Mengucci, Gilberto Leggieri, Armando Luches, Maurizio Martino y Alessio Perrone. "Carbon nitride coherently grown on Si (111) substrates by pulsed laser irradiation". En ALT'99 International Conference: Advanced Laser Technologies, editado por Vladimir I. Pustovoy y Vitali I. Konov. SPIE, 2000. http://dx.doi.org/10.1117/12.378165.
Texto completoFleming, James G. "Combining the best of bulk and surface micromachining using Si (111) substrates". En Micromachining and Microfabrication, editado por James H. Smith. SPIE, 1998. http://dx.doi.org/10.1117/12.324294.
Texto completoTawara, T., T. Hozumi, H. Omi, R. Kaji, S. Adachi, H. Gotoh y T. Sogawa. "Energy transfer in epitaxial Er2O3 thin films grown on Si(111) substrates". En 2013 IEEE Photonics Conference (IPC). IEEE, 2013. http://dx.doi.org/10.1109/ipcon.2013.6656416.
Texto completoAkasaka, Tetsuya, Yasuyuki Kobayashi y Toshiki Makimoto. "GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers". En 2006 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2006. http://dx.doi.org/10.7567/ssdm.2006.i-2-5.
Texto completoAkimoto, K., J. Mizuki, I. Hirosawa, T. Tatsumi, H. Hirayama, N. Aizaki y J. Matsui. "Interfacial Super Structure between Epitaxial Si(111) Layers and B(√3 x √3)/Si(111) Substrates Studied by Synchrotron X-Ray Diffraction". En 1987 Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1987. http://dx.doi.org/10.7567/ssdm.1987.s-iii-2.
Texto completoZhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. Thrush, M. J. Kappers et al. "GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE". En SPIE OPTO: Integrated Optoelectronic Devices, editado por Klaus P. Streubel, Heonsu Jeon y Li-Wei Tu. SPIE, 2009. http://dx.doi.org/10.1117/12.814919.
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