Artículos de revistas sobre el tema "Si (111) Heterojunction"
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Chao, Xiong, Chen Lei y Yuan Hongchun. "Study on the Synthesis, Characterization of p-CuSCN/n-Si Heterojunction". Open Materials Science Journal 7, n.º 1 (31 de octubre de 2013): 29–32. http://dx.doi.org/10.2174/1874088x01307010029.
Texto completoRazooqi, Mohammed A., Ameer F. Abdulameer, Adwan N. Hameed, Rasha A. Abdullaha y Ehsan I. Sabbar. "The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode". Advanced Materials Research 702 (mayo de 2013): 236–41. http://dx.doi.org/10.4028/www.scientific.net/amr.702.236.
Texto completoHe, Xiao-Min, Zhi-Ming Chen, Lei Huang y Lian-Bi Li. "First-principles calculations on atomic and electronic properties of Si(111)/6H-SiC(0001) heterojunction". Modern Physics Letters B 29, n.º 29 (25 de octubre de 2015): 1550182. http://dx.doi.org/10.1142/s0217984915501821.
Texto completoCho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa y Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, n.º 4 (4 de julio de 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.
Texto completoXu, Bei, Changjun Zhu, Xiaomin He, Yuan Zang, Shenghuang Lin, Lianbi Li, Song Feng y Qianqian Lei. "First-Principles Calculations on Atomic and Electronic Properties of Ge/4H-SiC Heterojunction". Advances in Condensed Matter Physics 2018 (2018): 1–9. http://dx.doi.org/10.1155/2018/8010351.
Texto completoXiong, Chao, An Cheng Xu, Xing Zhong Lu, Lei Chen, Xi Fang Zhu y Ruo He Yao. "Fabrication and Characterization of p-CuI/n-Si Heterojunction Diode". Key Engineering Materials 538 (enero de 2013): 324–27. http://dx.doi.org/10.4028/www.scientific.net/kem.538.324.
Texto completoMahowald, P. H. "Heterojunction band discontinuity at the Si–Ge(111) interface". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, n.º 4 (julio de 1985): 1252. http://dx.doi.org/10.1116/1.583050.
Texto completoGonzález, M. L., F. Soria y M. Alonso. "Initial stages of heterojunction formation: Si on GaAs(111)". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, n.º 3 (mayo de 1990): 1977–82. http://dx.doi.org/10.1116/1.576791.
Texto completoTsai, Chin-Yi, Jyong-Di Lai, Shih-Wei Feng, Chien-Jung Huang, Chien-Hsun Chen, Fann-Wei Yang, Hsiang-Chen Wang y Li-Wei Tu. "Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications". Beilstein Journal of Nanotechnology 8 (15 de septiembre de 2017): 1939–45. http://dx.doi.org/10.3762/bjnano.8.194.
Texto completoAbdul Majeed E.Ibrahim, Raid A. Isma'el, Enad S.Ibrahim y Essam M.Ibrahim. "Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis". Tikrit Journal of Pure Science 21, n.º 7 (8 de febrero de 2023): 162–66. http://dx.doi.org/10.25130/tjps.v21i7.1123.
Texto completoHOSSEINI, A., H. H. GÜLLÜ, E. COSKUN, M. PARLAK y C. ERCELEBI. "FABRICATION AND CHARACTERIZATION OF TiO2 THIN FILM FOR DEVICE APPLICATIONS". Surface Review and Letters 26, n.º 06 (julio de 2019): 1850205. http://dx.doi.org/10.1142/s0218625x18502050.
Texto completoAlkallas, Fatemah H., Shoug M. Alghamdi, Ameenah N. Al-Ahmadi, Amira Ben Gouider Trabelsi, Eman A. Mwafy, W. B. Elsharkawy, Emaan Alsubhe, Ayman M. Mostafa y Reham A. Rezk. "Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application". Micromachines 14, n.º 8 (31 de julio de 2023): 1546. http://dx.doi.org/10.3390/mi14081546.
Texto completoZhang, Yongfang, Tao Ji, Wenlong Zhang, Guoqiang Guan, Qilong Ren, Kaibing Xu, Xiaojuan Huang, Rujia Zou y Junqing Hu. "A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency". Journal of Materials Chemistry C 5, n.º 47 (2017): 12520–28. http://dx.doi.org/10.1039/c7tc04565d.
Texto completoABIDRI, B., J. P. LACHARME, M. GHAMNIA, C. A. SÉBENNE, M. EDDRIEF y M. ZERROUKI. "EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION". Surface Review and Letters 06, n.º 06 (diciembre de 1999): 1173–78. http://dx.doi.org/10.1142/s0218625x9900130x.
Texto completoZainuriah, Hassan, Sha Shiong Ng, G. L. Chew, F. K. Yam, Mat Johar Abdullah, M. Roslan Hashim, Kamarulazizi Ibrahim y M. E. Kordesch. "Growth and Properties of GaN/Si Heterojunction". Materials Science Forum 480-481 (marzo de 2005): 531–36. http://dx.doi.org/10.4028/www.scientific.net/msf.480-481.531.
Texto completoHussein, B. H., H. K. Hassun, B. K. H. Maiyaly y S. H. Aleabi. "Effect of copper on physical properties of CdO thin films and n-CdO: Cu / p-Si heterojunction". Journal of Ovonic Research 18, n.º 1 (febrero de 2022): 37–34. http://dx.doi.org/10.15251/jor.2022.181.37.
Texto completoStegemann, Bert, Jan Kegel, Lars Korte y Heike Angermann. "Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells". Solid State Phenomena 255 (septiembre de 2016): 338–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.338.
Texto completoDeng, Tianguo, Takuma Sato, Zhihao Xu, Ryota Takabe, Suguru Yachi, Yudai Yamashita, Kaoru Toko y Takashi Suemasu. "p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)". Applied Physics Express 11, n.º 6 (10 de mayo de 2018): 062301. http://dx.doi.org/10.7567/apex.11.062301.
Texto completoSALIM, EVAN T., MARWA S. AL WAZNY y MAKRAM A. FAKHRY. "GLANCING ANGLE REACTIVE PULSED LASER DEPOSITION (GRPLD) FOR Bi2O3/Si HETEROSTRUCTURE". Modern Physics Letters B 27, n.º 16 (6 de junio de 2013): 1350122. http://dx.doi.org/10.1142/s0217984913501224.
Texto completoDang, Zhaoying, Wenhui Wang, Jiayi Chen, Emily S. Walker, Seth R. Bank, Deji Akinwande, Zhenhua Ni y Li Tao. "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction". 2D Materials 8, n.º 3 (19 de marzo de 2021): 035002. http://dx.doi.org/10.1088/2053-1583/abea65.
Texto completoRoul, Basanta, Deependra Kumar Singh, Rohit Pant, Arun Malla Chowdhury, K. K. Nanda y S. B. Krupanidhi. "Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height". Journal of Applied Physics 129, n.º 24 (28 de junio de 2021): 244502. http://dx.doi.org/10.1063/5.0056053.
Texto completoHunger, R., Chr Pettenkofer y R. Scheer. "Dipole formation and band alignment at the Si(111)/CuInS[sub 2] heterojunction". Journal of Applied Physics 91, n.º 10 (2002): 6560. http://dx.doi.org/10.1063/1.1458051.
Texto completoPan, M., S. P. Wilks, P. R. Dunstan, M. Pritchard, R. H. Williams, D. S. Cammack y S. A. Clark. "Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets". Thin Solid Films 343-344 (abril de 1999): 605–8. http://dx.doi.org/10.1016/s0040-6090(98)01708-8.
Texto completoSittimart, Phongsaphak, Adison Nopparuchikun y Nathaporn Promros. "Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering". Advances in Materials Science and Engineering 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/6590606.
Texto completoHeo, Joo-Hoe, Hyuk-Hyun Ryu y Jong-Hoon Lee. "Dependence of the Heterojunction Diode Characteristics of ZnO/ZnO/p-Si(111) on the Buffer Layer Thickness". Korean Journal of Materials Research 21, n.º 1 (27 de enero de 2011): 34–38. http://dx.doi.org/10.3740/mrsk.2011.21.1.034.
Texto completoSánchez-Garcı́a, M. A., F. B. Naranjo, J. L. Pau, A. Jiménez, E. Calleja y E. Muñoz. "Ultraviolet electroluminescence in GaN/AlGaN single-heterojunction light-emitting diodes grown on Si(111)". Journal of Applied Physics 87, n.º 3 (febrero de 2000): 1569–71. http://dx.doi.org/10.1063/1.372052.
Texto completoJi, Tao, Qian Liu, Rujia Zou, Yangang Sun, Kaibing Xu, Liwen Sang, Meiyong Liao, Yasuo Koide, Li Yu y Junqing Hu. "An Interface Engineered Multicolor Photodetector Based on n-Si(111)/TiO2 Nanorod Array Heterojunction". Advanced Functional Materials 26, n.º 9 (29 de enero de 2016): 1400–1410. http://dx.doi.org/10.1002/adfm.201504464.
Texto completobinti Mohamad, Fariza, Junji Sasano, Tsutomu Shinagawa, Seiji Watase y Masanobu Izaki. "Electrochemical Construction of (0001)-ZnO/(111)-Cu2O Heterojunction Diode with Excellent Rectification Feature". Advanced Materials Research 287-290 (julio de 2011): 1412–15. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1412.
Texto completoPattada, B., Jiayu Chen, M. O. Manasreh, S. Guo, D. Gotthold, M. Pophristic y B. Peres. "Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates". Journal of Applied Physics 93, n.º 9 (mayo de 2003): 5824–26. http://dx.doi.org/10.1063/1.1561583.
Texto completoKumar, Arun, Samrat Mukherjee, Himanshu Sharma, Umesh Kumar Dwivedi, Sunil Kumar, Rajesh K. Gangwar y Ravi Kant Choubey. "Role of deposition parameters on the properties of the fabricated heterojunction ZnS/p-Si Schottky diode". Physica Scripta 97, n.º 4 (1 de abril de 2022): 045819. http://dx.doi.org/10.1088/1402-4896/ac6078.
Texto completoLi, Yapeng, Yingfeng Li, Jianyuan Wang, Zhirong He, Yonghong Zhang, Qi Yu y Juncai Hou. "The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction". Journal of Electron Spectroscopy and Related Phenomena 217 (mayo de 2017): 1–5. http://dx.doi.org/10.1016/j.elspec.2017.03.007.
Texto completoMcKernan, S. y C. B. Carter. "Observation of double ribbons in GaAs". Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 928–29. http://dx.doi.org/10.1017/s0424820100106703.
Texto completoDu, Chen-Hsun, Chien-Hsun Chen, Teng-Yu Wang, Jui-Chung Hsiao, Chun-Ming Yeh, Chun-Heng Chen, J. Andrew Yeh y Peichen Yu. "Fabricating 43-μm-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates". ECS Journal of Solid State Science and Technology 4, n.º 8 (2015): P319—P323. http://dx.doi.org/10.1149/2.0171508jss.
Texto completoSwitzer, Jay, Avishek Banik y Bin Luo. "(Invited) Epitaxial Electrodeposition of Wide Bandgap Semiconductors for Transparent and Flexible Electronics". ECS Meeting Abstracts MA2022-01, n.º 23 (7 de julio de 2022): 1128. http://dx.doi.org/10.1149/ma2022-01231128mtgabs.
Texto completoLi, Yapeng, Yingfeng Li, Yonghong Zhang, Juncai Hou, Wenyi Liu y Jianyuan Wang. "A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition". Journal of Materials Science: Materials in Electronics 28, n.º 17 (18 de mayo de 2017): 13053–57. http://dx.doi.org/10.1007/s10854-017-7137-6.
Texto completoGuan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang y Jingbo Wu. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application". Micromachines 14, n.º 1 (9 de enero de 2023): 168. http://dx.doi.org/10.3390/mi14010168.
Texto completoDas, U. K., M. Z. Burrows, M. Lu, S. Bowden y R. W. Birkmire. "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films". Applied Physics Letters 92, n.º 6 (11 de febrero de 2008): 063504. http://dx.doi.org/10.1063/1.2857465.
Texto completoKu, Ching-Shun, Jheng-Ming Huang, Ching-Yuan Cheng, Chih-Ming Lin y Hsin-Yi Lee. "Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition". Applied Physics Letters 97, n.º 18 (noviembre de 2010): 181915. http://dx.doi.org/10.1063/1.3511284.
Texto completoHill, D. M., F. Xu, Zhangda Lin y J. H. Weaver. "Summary Abstract: X‐ray photoelectron spectroscopy measurements of kinetic parameters at elevated temperature for Ge/Si(111)‐7×7 heterojunction formation". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, n.º 3 (mayo de 1988): 1350–51. http://dx.doi.org/10.1116/1.575700.
Texto completoSelman, Abbas M., Z. Hassan, M. Husham y Naser M. Ahmed. "A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO2 nanorod array on p-Si(111)". Applied Surface Science 305 (junio de 2014): 445–52. http://dx.doi.org/10.1016/j.apsusc.2014.03.109.
Texto completoThanh Tung, Nguyen, Phuc Huu Dang y Tran Le. "Influence of thickness on the structure and electrical, optical properties of N-doped SnO2 film". Science & Technology Development Journal - Engineering and Technology 2, n.º 4 (28 de febrero de 2020): 240–45. http://dx.doi.org/10.32508/stdjet.v2i4.604.
Texto completoRavikiran, L., N. Dharmarasu, K. Radhakrishnan, M. Agrawal, Lin Yiding, S. Arulkumaran, S. Vicknesh y G. I. Ng. "Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy". Journal of Applied Physics 117, n.º 2 (14 de enero de 2015): 025301. http://dx.doi.org/10.1063/1.4905620.
Texto completoŞakar, Betül Ceviz, Zeynep Orhan, Fatma Yıldırım y Ş. Aydoğan. "Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device". Journal of Physics D: Applied Physics 55, n.º 42 (22 de agosto de 2022): 425107. http://dx.doi.org/10.1088/1361-6463/ac8081.
Texto completoMahowald, P. H., R. S. List, J. Woicik, P. Pianetta y W. E. Spicer. "Si/InP(110) heterojunction". Physical Review B 34, n.º 10 (15 de noviembre de 1986): 7069–75. http://dx.doi.org/10.1103/physrevb.34.7069.
Texto completoList, R. S., P. H. Mahowald, J. Woicik y W. E. Spicer. "The Si/GaAs(110) heterojunction". Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4, n.º 3 (mayo de 1986): 1391–95. http://dx.doi.org/10.1116/1.573577.
Texto completoLi, Lian Bi y Zhi Ming Chen. "Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)". Materials Science Forum 858 (mayo de 2016): 221–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.221.
Texto completoAbidri, B., J. P. Lacharme, M. Ghamnia, C. A. Sébenne y M. Zerrouki. "Effect of Cu on InSe/Si(111) heterojunctions". European Physical Journal Applied Physics 8, n.º 2 (septiembre de 1999): 153–58. http://dx.doi.org/10.1051/epjap:1999241.
Texto completoPan, Xujie, Jing He, Lei Gao y Handong Li. "Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions". Nanomaterials 9, n.º 12 (12 de diciembre de 2019): 1771. http://dx.doi.org/10.3390/nano9121771.
Texto completoШарофидинов, Ш. Ш., С. А. Кукушкин, М. В. Старицын, А. В. Солнышкин, О. Н. Сергеева, Е. Ю. Каптелов y И. П. Пронин. "Структура и свойства композитов на основе нитридов алюминия и галлия, выращенных на кремнии разной ориентации с буферным слоем карбида кремния". Физика твердого тела 64, n.º 5 (2022): 522. http://dx.doi.org/10.21883/ftt.2022.05.52331.250.
Texto completoISMAIL, RAID A., KHALID Z. YAHYA y OMAR A. ABDULRAZAQ. "PREPARATION AND PHOTOVOLTAIC PROPERTIES OF Ag2O/Si ISOTYPE HETEROJUNCTION". Surface Review and Letters 12, n.º 02 (abril de 2005): 299–303. http://dx.doi.org/10.1142/s0218625x05007074.
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