Artículos de revistas sobre el tema "Semiconductors"
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1
Gösele, Ulrich M. y Teh Y. Tan. "Point Defects and Diffusion in Semiconductors". MRS Bulletin 16, n.º 11 (noviembre de 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.
Resumen
Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.
2
Yang, Jin-Peng, Hai-Tao Chen y Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces". Journal of Applied Physics 131, n.º 24 (28 de junio de 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Resumen
We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
3
Jiao, Yu Zhang, Xin Chao Wang, Tao Zhang, Ke Fu Yao, Zheng Jun Zhang y Na Chen. "Magnetic Semiconductors from Ferromagnetic Amorphous Alloys". Materials Science Forum 1107 (6 de diciembre de 2023): 111–16. http://dx.doi.org/10.4028/p-jim2w4.
Resumen
Utilizing both charge and spin degrees of freedom of electrons simultaneously in magnetic semiconductors promises new device concepts by creating an opportunity to realize data processing, transportation and storage in one single spintronic device. Unlike most of the traditional diluted magnetic semiconductors, which obtain intrinsic ferromagnetism by adding magnetic elements to non-magnetic semiconductors, we attempt to develop room temperature magnetic semiconductors via a metal-semiconductor transition by introducing oxygen into three different ferromagnetic amorphous alloy systems. These magnetic semiconductors show different conduction types determined primarily by the compositions of the selected amorphous ferromagnetic alloy systems. These findings may pave a new way to realize magnetic semiconductor-based spintronic devices that work at room temperature.
4
Łukasiak, Lidia y Andrzej Jakubowski. "History of Semiconductors". Journal of Telecommunications and Information Technology, n.º 1 (26 de junio de 2023): 3–9. http://dx.doi.org/10.26636/jtit.2010.1.1015.
Resumen
The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).
5
Xu, Yuanqing, Weibiao Wang, Zhexue Chen, Xinyu Sui, Aocheng Wang, Cheng Liang, Jinquan Chang et al. "A general strategy for semiconductor quantum dot production". Nanoscale 13, n.º 17 (2021): 8004–11. http://dx.doi.org/10.1039/d0nr09067k.
6
WESSELS, B. W. "MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS". SPIN 03, n.º 04 (diciembre de 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Resumen
Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.
7
Sulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah y Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices". Materials Science Forum 737 (enero de 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.
Resumen
Organic semiconductor-based solar photovoltaic cells and sensors are scalable, printable, solution processable, bendable and light-weight. Furthermore, organic semiconductors require low energy fabrication process, hence can be fabricated at low cost as light-weight solar cells and sensors, coupled with the ease of processing, as well as compatibility, with flexible substrates. Organic semiconductors have been identified as a fascinating class of novel semiconductors that have the electrical and optical properties of metals and semiconductors. The continuous demand to improve the properties of organic semiconductors raises the quest for a deep understanding of fundamental issues and relevant electronic processes. Organic semiconductor thin film is sandwiched between two metal electrodes of indium tin oxide (ITO) and aluminum to form organic photovoltaic solar cell. Several types of organic semiconductors have been utilized as the photoactive layer in the solution processable organic solar cells. The performance of the fabricated solar cells can be improved by dissolving the material in the right choice of solvent, annealing of organic thin film, slowly forming the thin film and introducing an infra-red absorbance layer. Besides, organic semiconductor-based sensors can be fabricated utilizing either in a sandwidch type or planar type device. Some of these techniques and the experimental results are presented.
8
Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor". Applied and Computational Engineering 7, n.º 1 (21 de julio de 2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.
Resumen
Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more expensive price. Then this paper will talk about the application of the third-generation semiconductor. The third-generation semiconductor materials can be mainly used in three fields, which are photoelectric, microwave radio frequency and power electronics. In terms of the photoelectric aspect, this paper takes the blue LED as an example. The blue LED is produced because of the wide band gap of the third-generation semiconductor. In the microwave RF aspect, the paper takes the 5G communication system as an example. Third-generation semiconductors make the high-frequency, high-power devices needed for 5G communications systems. In the power electronics aspect, the paper cites new energy vehicles as an example. Third-generation semiconductor components have a number of features needed for new-energy vehicles. For example, third-generation semiconductors can work at high temperatures. Finally, this paper will introduce the development trend of it. In the future, larger wafers will become mainstream. The third-generation semiconductors will be used in more fields. In addition, the new material systems will gradually mature.
9
Kumar, Anoop. "PRESENT STATUS OF SEMICONDUCTOR INDUSTRY IN INDIA and IT’S FUTURE PROSPECTS". SCHOLARLY RESEARCH JOURNAL FOR INTERDISCIPLINARY STUDIES 9, n.º 68 (31 de octubre de 2021): 16095–100. http://dx.doi.org/10.21922/srjis.v9i68.10004.
Resumen
Semiconductor is now an inseparable part of almost all sectors. Nowadays semiconductors or chips / integrated circuits (ICs) are the lifeblood of all digital Products. Industry estimates are that India’s demand for semi - conductor goods will reach US $ 400 billion by FY 2025. Taiwan’s TSMC and South Korea’s Samsung manufacture as much as 70% of the world’s semiconductors. America only makes about 10% of the chips it uses. According to Global data, the semiconductor industry is facing an unprecedentad supply shortage since the end of the year 2019 due to unprecedented demand growth. The government’s plan to promote Semiconductor manufacturing may have a bright future for Indian semiconductor Industry. The government will seek to incentivise startups to design and make semiconductors. India imported $ 3.14 bn in semiconductor Devices in 2019. Semiconductor world market has to grow by $ 90.80 bn during 2020 - 2024. India can take it’s pie in this opportunity. India has to develop an ecosystem. Capital expenditure is required to expand production to address the rising chip demand. Setting up a new foundry can cost anywhere around $ 15 bn - $ 20 bn. Amid challenges Technology influx such as artificial intelligence, 5G wireless, IOT and cloud computing will remain key factors for rampant growth of semiconductors Industry in India.
10
Khan, Arif y Atanu Das. "Diffusivity-Mobility Relationship for Heavily Doped Semiconductors with Non-Uniform Band Structures". Zeitschrift für Naturforschung A 65, n.º 10 (1 de octubre de 2010): 882–86. http://dx.doi.org/10.1515/zna-2010-1017.
Resumen
A general relationship between the diffusivity and the mobility in degenerate semiconductors with non-uniform energy band structures has been presented. The relationship is general enough to be applicable to both non-degenerate and degenerate semiconductors. It is suitable for the study of electrical transport in heavily doped semiconductors and semiconductor devices.
11
Meng, X. Y., D. Y. Liu y G. W. Qin. "Band engineering of multicomponent semiconductors: a general theoretical model on the anion group". Energy & Environmental Science 11, n.º 3 (2018): 692–701. http://dx.doi.org/10.1039/c7ee03503a.
Resumen
Development of energy conversion semiconductor materials has attracted increasing interest over the past three decades, but most successful semiconductors are unary or binary, rather than multicomponent semiconductors (MCSCs).
12
Ngai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities". MRS Advances 1, n.º 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.
Resumen
ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.
13
Yang, Xiaobing, Zhaodong Wen, Ziling Wu y Xuetao Luo. "Synthesis of ZnO/ZIF-8 hybrid photocatalysts derived from ZIF-8 with enhanced photocatalytic activity". Inorganic Chemistry Frontiers 5, n.º 3 (2018): 687–93. http://dx.doi.org/10.1039/c7qi00752c.
Resumen
Controllable conjunction of semiconductors with metal organic frameworks (MOFs) has been an efficient tool to enhance the chemical and physical properties of semiconductors by forming semiconductor–MOF hybrid structures.
14
Sánchez-Vergara, Guevara-Martínez, Arreola-Castillo y Mendoza-Sevilla. "Fabrication of Hybrid Membranes Containing Nylon-11 and Organic Semiconductor Particles with Potential Applications in Molecular Electronics". Polymers 12, n.º 1 (19 de diciembre de 2019): 9. http://dx.doi.org/10.3390/polym12010009.
Resumen
Chemical degradation is a major disadvantage in the development of organic semiconductors. This work proposes the manufacture and characterization of organic semiconductor membranes in order to prevent semiconductor properties decreasing. Semiconductor membranes consisting of Nylon-11 and particles of π-conjugated molecular semiconductors were manufactured by high-vacuum evaporation followed by thermal relaxation. Initially, and with the aim of obtaining semiconductor particles, bulk heterojunction (BHJ) was carried out using green chemistry techniques between the zinc phthalocyanine (ZnPc) and the zinc hexadecafluoro-phthalocyanine (F16ZnPc) as n-type molecular semiconductors with the p-type molecular semiconductor dibenzotetrathiafulvalene (DBTTF). Consequently, the π-conjugated semiconductors particles were embedded in a Nylon-11 matrix and characterized, both structurally and considering their optical and electrical properties. Thin films of these materials were manufactured in order to comparatively study the membranes and precursor semiconductor particles. The membranes presented bandgap (Eg) values that were lower than those obtained in the films, which is an indicator of an improvement in their semiconductor capacity. Finally, the membranes were subjected to accelerated lighting conditions, to determine the stability of the polymer and the operating capacity of the membrane. After fatigue conditions, the electrical behavior of the proposed semiconductor membranes remained practically unaltered; therefore, they could have potential applications in molecular electronics. The chemical stability of membranes, which did not degrade in their polymer compound, nor in the semiconductor, was monitored by IR spectroscopy.
15
Lund, Mark W. "More than One Ever Wanted to Know about X-Ray Detectors Part VI: Alternate Semiconductors for Detectors". Microscopy Today 3, n.º 5 (junio de 1995): 12–13. http://dx.doi.org/10.1017/s1551929500066116.
Resumen
X-ray spectrometers give the capability to determine chemical element composition in electron microscopes. The semiconductor with the most experience as an x-ray detector is silicon. Silicon is the most highly developed material on earth, and has a lot of good things going for it, but for some applications we crave something with other good properties. For example, for room temperature detectors it would be best to have a semiconductor with a wider band gap. For higher resolution it would be better to have a semiconductor with a smaller band gap. For these reasons a number of other semiconductors have been developed as x-ray detectors. In this article I will talk about narrow band gap semiconductors. Next time I will discuss large band gap semiconductors.
16
MAHMOOD, RASHA SHAKIR, Muna Ali Shakir, Younis Turki Mahmood y Dhia Hadi Hussain. "Semiconductors between past and present". Journal of Advanced Sciences and Engineering Technologies 3, n.º 1 (5 de enero de 2022): 54–56. http://dx.doi.org/10.32441/jaset03.01.05.
Resumen
There is no doubt that the semiconductor contributed very significantly to changing our world in the long run, which made it very necessary to write this article and shed light on the semiconductor between past and present. Whereas, this article is not intended to teach you semiconductor chemistry and its applications, but it also aims to refresh your memory with everything related to semiconductors from the moment of sunrise to the present day.As known, people need to communicate with each other in order to meet their daily and professional needs. In the past, the communication process was very difficult and sometimes costly until the emergence of what is known as semiconductors, which in turn opened new purview in the world of communications through its entry into the communication devices industry and computers industry and its ability to processing The data, in turn, facilitated and summarized a very long journey on humans in the field of industry. Today, we are on the beginning of a new sun rise of semiconductor, especially after the emergence of the so-called nanotechnology, where semiconductors have been observed a very large role in the development of this technology, not only but have become Part of the integral ones.
17
М. Н. Аликулов. "ЗАВИСИМОСТЬ СТРУКТУРЫ ЗОН ПОЛУПРОВОДНИКОВ ОТ СКОРОСТИ РЕКОМБИНАЦИИ МЕЖДУ ЗОНАМИ". World Science 1, n.º 5(57) (31 de mayo de 2020): 31–34. http://dx.doi.org/10.31435/rsglobal_ws/31052020/7073.
Resumen
This article researches the dependence of recombination processes that occur in semiconductors on the structure of semiconductor zones. The advantages of using faulty zonal semiconductors in the development of solar cells have been substantiated.
18
Gunshor, Robert L. y Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research". MRS Bulletin 20, n.º 7 (julio de 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.
Resumen
The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible spectrum.During the past thirty years or so, development of the narrower gap III-V compound semiconductors, such as gallium arsenide and related III-V alloys, has progressed quite rapidly. A striking example of the current maturity reached by the III-V semiconductor materials is the infrared semiconductor laser that provides the optical source for fiber communication links and compact-disk players. Despite the fact that the direct bandgap II-VI semiconductors offered the most promise for realizing diode lasers and efficient light-emitting-diode (LED) displays over the green and blue portions of the visible spectrum, major obstacles soon emerged with these materials, broadly defined in terms of the structural and electronic quality of the material. As a result of these persistent problems, by the late 1970s the II-VI semiconductors were largely relegated to academic research among a small community of workers, primarily in university research laboratories.
19
Xia, Qingjiao. "Charge Transport Mechanism of Organic Semiconductors Based on Molecular Dynamics Simulation". Academic Journal of Science and Technology 7, n.º 3 (27 de octubre de 2023): 148–50. http://dx.doi.org/10.54097/ajst.v7i3.13265.
Resumen
The aim of this paper is to investigate the charge transport mechanism in organic semiconductors based on molecular dynamics simulation. Molecular dynamics simulation, as an effective computational method, can reveal the microscopic mechanism of charge transport in organic semiconductors. The basic principles and methods of molecular dynamics simulation will be introduced in the paper, and its application in studying charge transport in organic semiconductors will be discussed. Through the simulation analysis, the effects of key parameters such as intermolecular interactions, carrier mobility and electron transport on the performance of organic semiconductor devices can be revealed, providing guidance for the design and optimization of organic semiconductor devices.
20
Yakubovich, Boris. "Influence of penetrating radiations on electrical low frequency noise of semiconductors". ADVANCES IN APPLIED PHYSICS 9, n.º 3 (3 de agosto de 2021): 181–86. http://dx.doi.org/10.51368/2307-4469-2021-9-3-181-186.
Resumen
The influence of penetrating radiations on the electrical low-frequency noise of semiconductors is studied. Expression is calculated that determines the number of structural defects in semiconductors arising from exposure to penetrating radia-tion. General form expression is calculated for the spectrum of electrical low-frequency noise in semiconductors when exposed to penetrating radiation. Quanti-tative relationship was established between the spectrum of electrical low-frequency noise and the development of disturbances in the structure of semicon-ductors caused by penetrating radiations. The results obtained can be used to de-termine the spectra of electrical noise in semiconductors of various types and in numerous semiconductor devices. The results of the article have practical applica-tions. Calculated expressions allow to make estimates of the intensity of electrical low-frequency noise, from which conclusions can be drawn about possibility of functioning and reliability of semiconductor devices. Established relationship be-tween electrical noise and radiation defects can be used to estimate, based on spec-tral characteristics of the noise, the defectiveness of structure of semiconductors subjected to radiation damage.
21
Chen, Sheng. "Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors". Highlights in Science, Engineering and Technology 81 (26 de enero de 2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Resumen
Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitride based diluted magnetic semiconductors. This paper found that the theoretical prediction of gallium nitride based diluted magnetic semiconductors is generally believed to have good temperature conditions and advantages in thermal conductivity, electron mobility, breakdown voltage, and other aspects. The current experimental results also confirm that gallium nitride based diluted magnetic semiconductors can improve the limitations of semiconductors under room temperature conditions. This article believes that this semiconductor material has broad development potential in fields such as intelligent vehicles, aerospace, and cloud computing.
22
TALANINA, I. B. "EXCITONIC SELF-INDUCED TRANSPARENCY IN SEMICONDUCTORS". Journal of Nonlinear Optical Physics & Materials 05, n.º 01 (enero de 1996): 51–57. http://dx.doi.org/10.1142/s0218863596000064.
Resumen
The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.
23
Tao, Kai, Pandeeswar Makam, Ruth Aizen y Ehud Gazit. "Self-assembling peptide semiconductors". Science 358, n.º 6365 (16 de noviembre de 2017): eaam9756. http://dx.doi.org/10.1126/science.aam9756.
Resumen
Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems.
24
Anthony, John E., Martin Heeney y Beng S. Ong. "Synthetic Aspects of Organic Semiconductors". MRS Bulletin 33, n.º 7 (julio de 2008): 698–705. http://dx.doi.org/10.1557/mrs2008.142.
Resumen
AbstractThis article discusses the importance of the choice of synthetic methodology in the purity, and therefore performance, of both small-molecule and polymeric organic semiconductors. We discuss common methodologies used in the preparation of organic semiconductors, paying particular attention to the impurities and by-products that can arise during these synthetic approaches and how they can have an impact on semiconductor performance.
25
Borges-González, Jorge, Christina J. Kousseff y Christian B. Nielsen. "Organic semiconductors for biological sensing". Journal of Materials Chemistry C 7, n.º 5 (2019): 1111–30. http://dx.doi.org/10.1039/c8tc05900d.
26
Kim, Kyunghun, Hocheon Yoo y Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications". Polymers 14, n.º 14 (21 de julio de 2022): 2960. http://dx.doi.org/10.3390/polym14142960.
Resumen
The life expectancy of humans has been significantly elevated due to advancements in medical knowledge and skills over the past few decades. Although a lot of knowledge and skills are disseminated to the general public, electronic devices that quantitatively diagnose one’s own body condition still require specialized semiconductor devices which are huge and not portable. In this regard, semiconductor materials that are lightweight and have low power consumption and high performance should be developed with low cost for mass production. Organic semiconductors are one of the promising materials in biomedical applications due to their functionalities, solution-processability and excellent mechanical properties in terms of flexibility. In this review, we discuss organic semiconductor materials that are widely utilized in biomedical devices. Some advantageous and unique properties of organic semiconductors compared to inorganic semiconductors are reviewed. By critically assessing the fabrication process and device structures in organic-based biomedical devices, the potential merits and future aspects of the organic biomedical devices are pinpointed compared to inorganic devices.
27
Zaizen, Shohei, Kyohei Asami, Takashi Furukawa, Takeshi Hatta, Tsubasa Nakamura, Takashi Sakugawa y Takahisa Ueno. "The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection". Electronics 12, n.º 21 (4 de noviembre de 2023): 4541. http://dx.doi.org/10.3390/electronics12214541.
Resumen
In this study, high-voltage switching was performed by connecting semiconductors in series. By employing Snubber circuits and voltage divider resistors for each semiconductor, the destruction of the semiconductors was prevented. Additionally, a pulse transformer was installed between the function generator and the photocoupler to isolate the gate circuit, preventing electrical discharges in the circuit and enabling operation at an output voltage of 10 kV and an operating frequency of 200 Hz. The temperature of the semiconductors increased with the increase in operating frequency, which was counteracted by connecting charging resistors and capacitors to limit the current to the semiconductors. As a result, operation at 430 Hz became possible. Furthermore, a saturable inductor (SI) was connected to enable continuous operation. The SI delays the rise of the current and creates a phase difference, thereby reducing the power consumption of the conductor and mitigating the temperature rise, enabling continuous operation at 300 Hz. Moreover, by increasing the number of semiconductor series stages to six, an output voltage of 20 kV was confirmed in tests. By using two semiconductor series circuits, the pulsed power supply that can be changed to any pulse width was also created. As a result, output voltages with arbitrary pulse widths from 5 μs to 30 μs were confirmed.
28
Xiang, Wenlong. "Semiconductor Culture in the Global Economy". Lecture Notes in Education Psychology and Public Media 25, n.º 1 (28 de noviembre de 2023): 7–11. http://dx.doi.org/10.54254/2753-7048/25/20230188.
Resumen
The use of technology in multiple industries has contributed to the growth of the global economy. As a core part of todays technology, the impact derived from semiconductors is two-sided. While the general public is focused on the advantages of semiconductors, the political-cultural-national tensions it creates are missing. Semiconductor culture is a combination of technology and politics in the context of economic development. The historical semiconductor battles between countries and the current semiconductor battles confirm this view. This paper reviews the Japan-US semiconductor war in the last century, the Japan-South Korea semiconductor war in this century, and the US-China semiconductor war in the last few years. This paper aims to use the semiconductor cases to demonstrate the adverse effects of semiconductor culture in the global economy. Finally, it concludes that semiconductor culture can strain political relations between nations.
29
Khurana, Divyansh Anil, Nina Plankensteiner y Philippe M. Vereecken. "Reversible Redox Probes to Determine the Band Edge Locations for Nano-TiO2". ECS Meeting Abstracts MA2023-01, n.º 30 (28 de agosto de 2023): 1803. http://dx.doi.org/10.1149/ma2023-01301803mtgabs.
Resumen
Semiconductor (photo-)electrocatalysts show immense promise in answering the difficulties faced in CO2 electrolysis in relation to the reduction product selectivity. We thus see materials like ZnO[1], Cu2-xSe[2], MoS2 [3], TiO2 [4] and their numerous composites being frequently investigated for their catalytic properties in CO2 (photo-)electroreduction. These catalysts are fabricated via varying techniques and can assume very different thicknesses and morphologies. Although the nano-semiconductors may behave differently, often only the bulk properties are considered when proposing possible reaction pathways. Determining band edge locations of semiconductors in solutions is one such case, where Mott-Schottky (MS) measurements are a widely accepted strategy. The measurement of the potential dependence of the capacitance of the semiconductor space-charge layer under depletion indeed forms an elegant method to determine the flat-band potential and hence the band edge positions for bulk semiconductors in solution. However, the MS method cannot be used for nano-structured semiconductor electrodes in the form of thin films, nanorods or nanoparticles coated on conducting substrates, as their nano-dimensions are typically much smaller than that of a semiconductor depletion layer. In this work, we explored an alternate strategy to determine band edge positions of nano-semiconductors using reversible redox probes. A model thin film system comprised of 30nm anatase TiO2 is used to demonstrate the feasibility of the strategy in aqueous electrolyte solutions. Fe, Ru and Cr based reversible redox species were used as electrochemical probes in cyclic voltammetry experiments with varying solution pH. Based on the presence/absence of the reversible behavior of these probes, we can deduce the TiO2 band edge locations. The procedure also allows us to draw parallels between semiconductor-metal and semiconductor-solution interfaces to gain new insights into the CO2 reduction mechanism on such semiconductor electrodes. Figure 1
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Greco, Rossella, Romain Botella y Javier Fernández-Catalá. "Cu-Based Z-Schemes Family Photocatalysts for Solar H2 Production". Hydrogen 4, n.º 3 (6 de septiembre de 2023): 620–43. http://dx.doi.org/10.3390/hydrogen4030040.
Resumen
Solar photocatalytic H2 production has drawn an increasing amount of attention from the scientific community, industry, and society due to its use of green solar energy and a photocatalyst (semiconductor material) to produce green H2. Cu-based semiconductors are interesting as photocatalysts for H2 production because Cu is earth-abundant, cheap, and the synthesis of its copper-containing semiconductors is straightforward. Moreover, Cu-based semiconductors absorb visible light and present an adequate redox potential to perform water splitting reaction. Nevertheless, pristine Cu-based semiconductors exhibit low photoactivity due to the rapid recombination of photo-induced electron-hole (e−-h+) pairs and are subject to photo corrosion. To remedy these pitfalls, the Cu semiconductor-based Z-scheme family (Z-schemes and S-schemes) presents great interest due to the charge carrier mechanism involved. Due to the interest of Z-scheme photocatalysts in this issue, the basic concepts of the Z-scheme focusing on Cu-based semiconductors are addressed to obtain novel systems with high H2 photo-catalytic activity. Focusing on H2 production using Cu-based Z-schemes photocatalyst, the most representative examples are included in the main text. To conclude, an outlook on the future challenges of this topic is addressed.
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Yonenaga, Ichiro, Koji Sumino, Gunzo Izawa, Hisao Watanabe y Junji Matsui. "Mechanical property and dislocation dynamics of GaAsP alloy semiconductor". Journal of Materials Research 4, n.º 2 (abril de 1989): 361–65. http://dx.doi.org/10.1557/jmr.1989.0361.
Resumen
The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.
32
Zhao, Wenkai. "The Application Status of the Third Generation of Semiconductor Materials in the FIeld of Electric Power". Highlights in Science, Engineering and Technology 53 (30 de junio de 2023): 194–98. http://dx.doi.org/10.54097/hset.v53i.9723.
Resumen
With the vigorous development of semiconductor materials, the third generation of semiconductors represented by SiC, GaN, and diamond have gradually become the mainstream materials of modern semiconductors, and this paper introduces the application of SiC, GaN, and diamond, respectively, and analyzes their existing properties. The advantages and disadvantages of each are drawn in more detail.
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CHENG, L. J., D. T. H. LIU y K. L. LUKE. "OPTICAL PROCESSING WITH PHOTOREFRACTIVE COMPOUND SEMICONDUCTORS". Journal of Nonlinear Optical Physics & Materials 01, n.º 03 (julio de 1992): 609–38. http://dx.doi.org/10.1142/s0218199192000303.
Resumen
Photorefractive compound semiconductors are attractive for optical processing because of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ratio. This paper presents a collection of recent experimental results on optical processing using photorefractive GaAs and InP. The results demonstrate the feasibility of using photorefractive compound semiconductors as dynamic holographic interaction media for optical processing applications.
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Kim, Dongwook, Hyeonju Lee, Bokyung Kim, Sungkeun Baang, Kadir Ejderha, Jin-Hyuk Bae y Jaehoon Park. "Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance". Materials 15, n.º 19 (29 de septiembre de 2022): 6763. http://dx.doi.org/10.3390/ma15196763.
Resumen
The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.
35
Das, Rajat Suvra. "TensorFlow: Revolutionizing Large-Scale Machine Learning in Complex Semiconductor Design". International Journal of Computing and Engineering 5, n.º 3 (19 de abril de 2024): 1–9. http://dx.doi.org/10.47941/ijce.1812.
Resumen
The development of semiconductor manufacturing processes is becoming more intricate in order to meet the constantly growing need for affordable and speedy computing devices with greater memory capacity. This calls for the inclusion of innovative manufacturing techniques hardware components, advanced intricate assemblies and. Tensorflow emerges as a powerful technology that comprehensively addresses these aspects of ML systems. With its rapid growth, TensorFlow finds application in various domains, including the design of intricate semiconductors. While TensorFlow is primarily known for ML, it can also be utilized for numerical computations involving data flow graphs in semiconductor design tasks. Consequently, this SLR (Systematic Literature Review) focuses on assessing research papers about the intersection of ML, TensorFlow, and the design of complex semiconductors. The SLR sheds light on different methodologies for gathering relevant papers, emphasizing inclusion and exclusion criteria as key strategies. Additionally, it provides an overview of the Tensorflow technology itself and its applications in semiconductor design. In future, the semiconductors may be designed in order to enhance the performance, and the scalability and size can be increased. Furthermore, the compatibility of the tensor flow can be increased in order to leverage the potential in semiconductor technology.
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Palmstrøm, Chris. "Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics". MRS Bulletin 28, n.º 10 (octubre de 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Resumen
AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.
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Dietl, Tomasz y Hideo Ohno. "Ferromagnetic III–V and II–VI Semiconductors". MRS Bulletin 28, n.º 10 (octubre de 2003): 714–19. http://dx.doi.org/10.1557/mrs2003.211.
Resumen
AbstractRecent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.
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Strandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon y Jing Li. "Wafer Level Packaging of Compound Semiconductors". Journal of Microelectronics and Electronic Packaging 7, n.º 3 (1 de julio de 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.
Resumen
The microelectronics industry has implemented a number of different wafer level packaging (WLP) technologies for high volume manufacturing, including: UBM deposition, solder bumping, wafer thinning, and dicing. These technologies were successfully developed and implemented at a number of contract manufacturing companies, and then licensed to many of the semiconductor manufacturers and foundries. The largest production volumes for these technologies are for silicon-based semiconductors. Continuous improvements and modifications to these WLP processes have made them compatible with the changes observed over the years in silicon semiconductor technologies. These industry changes include: the move from aluminum to copper interconnect metallurgy, increases in wafer size, decreases in pad pitch, and the use of Low-K dielectrics. In contrast, the direct transfer of these WLP technologies to compound semiconductor devices, like GaAs, SiC, InP, GaN, and sapphire; has been limited due to a number of technical compatibility issues, several perceived compatibility issues, and some business concerns From a technical standpoint, many compound semiconductor devices contain fragile air bridges, gold bond pads, topographical cavities and trenches, and have a number of unique bulk material properties which are sensitive to the mechanical and chemical processes associated with the standard WLP operations used for silicon wafers. In addition, most of the newer contract manufacturing companies and foundries have implemented mostly 200 and 300 mm wafer capabilities into their facilities. This limits the number of places that one can outsource the processing of 100 and 150 mm compound semiconductor wafers. Companies that are processing large numbers of silicon based semiconductor wafers at their facilities are reluctant to process many of these compound semiconductors because there is a perceived risk of cross contamination between the different wafer materials. Companies are not willing to risk their current business of processing silicon wafers by introducing these new materials into existing process flows. From a business perspective, many companies are reluctant to take the liability risks associated with some of the very high-value compound semiconductors. In addition, the volumes for many of the compound semiconductor devices are very small compared with silicon based devices, thus making it hard to justify interruption in the silicon wafer flows to accommodate these lower volume products. In spite of these issues and perceptions, the markets for compound semiconductors are expanding. Several high profile examples include the increasing number of frequency and power management devices going into cell phones, light emitting diodes, and solar cells The strategy for the work described in this paper is to protect all structures and surfaces with either a spin-on resist or a laminated film during each step in the process flow. These layers will protect the wafer from mechanical and chemical damage, and at the same time protect the fab from contamination by the compound semiconductor.
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Deng, Zhanpeng. "Development of The Third Generation of Semiconductors with SiC and GaN as The Mainstay". Highlights in Science, Engineering and Technology 27 (27 de diciembre de 2022): 436–42. http://dx.doi.org/10.54097/hset.v27i.3798.
Resumen
The application and development of semiconductor technology has a very important role in the development of the world's science and technology. The third-generation semiconductors are broadband semiconductors with high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, which are incomparable to the previous two generations of semiconductors. In this paper, we focus on the third-generation semiconductor materials and further study the most mature and widely used SiC and GaN, and introduce the mainstream methods for the preparation of SiC and GaN. The paper also introduces the applications of these two materials in energy, communication, and consumer electronics, taking into account the current development of the industry. Finally, the paper also considers the problems and challenges that still need to be solved in the next stage of the industry's development.
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Smertenko, P. S. "Vadim Evgenievich Lashkarev and optoelectronics". Optoelektronìka ta napìvprovìdnikova tehnìka 58 (21 de diciembre de 2023): 5–15. http://dx.doi.org/10.15407/iopt.2023.58.005.
Resumen
On 7 October 2023, the scientific community celebrated the 120th anniversary of the birth of Vadym Yevhenovych Lashkariov, a physicist, discoverer of the p-n junction, teacher, organiser of science, and simply a smart and decent person (07.10.2003 - 01.12.1974). In our opinion, the significance and influence of V.E. Lashkarev on the further development of physics, in particular semiconductor physics in Ukraine, has not been sufficiently revealed, although a number of articles have been published over the past decades on the life and scientific work of Vadym Yevhenovych. This article aims to look at the scientific work of Vadym Yevhenovych in the light of the newly emerging field of optoelectronics. The article shows some new aspects of the life and work of Academician of the National Academy of Sciences of Ukraine Vadym Yevhenovych Lashkariov, which are based on documents signed by him personally. Despite the blows of fate: exile and the Second World War, Vadym Yevhenovych retained his scientific inspiration and a far-sighted vision of the development of a new scientific field - semiconductor physics. The directions of the V. Lashkarev scientific school of semiconductor physics are analysed in details: studies of generation-recombination processes and electronic transport in semiconductors and semiconductor structures; theoretical and experimental studies of surface phenomena in semiconductors; theoretical and experimental studies of electronic transfer of two- dimensional free charge carriers in semiconductor nanostructures; studies of electrophysical and photoelectric effects in semiconductors and layered structures. Some examples of monographs and articles by students and followers of the V. Lashkarev scientific school, who developed the initial scientific fields and modernised the physics of semiconductors, are given.
41
Hellenthal, Berthold. "Future Challenges and Roadmaps of Semiconductor, Packaging and Integration". International Symposium on Microelectronics 2015, S1 (1 de octubre de 2015): S1—S37. http://dx.doi.org/10.4071/isom-2015-slide-2.
Resumen
More than 80% of all automotive innovations are directly or indirectly enabled by semiconductors. In recent years premium cars became an early adopter of new technologies to enable new customer functions. Nowadays automotive is even pushing new semiconductor and packaging technologies in some areas. The automotive megatrends continuously impose new challenges on semicondcutors and their package in performance, energy efficiency as well as in reliability and robustness. The presentation will introduce the automotive megatrends and explain the new challenges by practical examples. In addition it will be explained how the Audi semiconductor strategy, the Progressive SemiConductor Program (PSCP), addresses the challenges - synchronizing the development speed of semiconductors with the need for increased reliability.
42
Koch, M., K. Maier, J. Major, A. Seeger, W. Sigle, W. Staiger, W. Templ et al. "μ− SR in semiconductorsSR in semiconductors". Hyperfine Interactions 65, n.º 1-4 (febrero de 1991): 1039–45. http://dx.doi.org/10.1007/bf02397760.
43
Matthews, D. y A. Stanley. "The Potential Dependence of the Rate Constant for Charge Transfer at the Semiconductor-Redox Electrolyte Interface". Australian Journal of Chemistry 49, n.º 7 (1996): 731. http://dx.doi.org/10.1071/ch9960731.
Resumen
The kinetics of charge transfer at the semiconductor- redox electrolyte interface is described in terms of the Gurney- Gerischer -Marcus (GGM) model by using nuclear configuration potential energy diagrams, electronic configuration potential energy diagrams, density of state distributions and rate constant distributions. The model of identical parabolas for the nuclear configuration diagrams is used; this leads to Gaussian oxidant and reductant distribution functions, g(E), where E is the vertical transition (Franck-Condon) energy. The rate constant distribution, k(E), is obtained from the overlap between occupied and unoccupied state distribution functions of the semiconductor and redox electrolyte. Integration of k(E) gives the rate constant which is calculated as a function of the Helmholtz potential, VH, for various values of the reorganization energy, Ereorg. Three types of semiconductor are considered: intrinsic, doped and highly doped. For intrinsic semiconductors the charge transfer rate constant is relatively small and involves both the conduction and valence bands. For symmetric charge transfer (zero energy change, E0.0, for the reaction) both oxidation and reduction occur between the redox electrolyte and both bands of the semiconductor. For unsymmetrical reactions, charge transfer tends to involve only one of the bands; for net reduction, the valence band is involved, whereas for net oxidation the conduction band is involved. For doped semiconductors the rate constant is larger and only one band is involved; for n-type it is the conduction band, and for p-type it is the valence band. For highly doped semiconductors with the Fermi level in either the conduction or valence bands. the rate constant is even larger and only one band is involved. Changes in Helmholtz potential affect k(E) in a similar way to that for metals. However, unlike for metals, the calculated Tafel plots for highly doped n-type semiconductors are shown to exhibit a Marcus inversion region. This is a consequence of the energy gap between conduction and valence bands of the semiconductor. For doped semiconductors, changes in the Helmholtz potential also produce a maximum in the Tafel plot and because of the relatively low currents involved this maximum should be experimentally observable. For intrinsic semiconductors, variation of Helmholtz potential without inclusion of band bending in the semiconductor produces unexpectedly low Tafel slopes which are related to the ratio of the band gap to the reorganization energy, so that the larger the ratio the smaller the Tafel slope. This unexpected result, which amounts to an assumption of band edge unpinning, is shown to accurately account for the experimentally observed Tafel slopes for reduction at n-WSe2 of the dimethylferrocenium ion in acetonitrile.
44
Wu, Jianhao. "Performance comparison and analysis of silicon-based and carbon-based integrated circuits under VLSI". Applied and Computational Engineering 39, n.º 1 (21 de febrero de 2024): 244–50. http://dx.doi.org/10.54254/2755-2721/39/20230605.
Resumen
Since 1960, the semiconductor industry has invented Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) technologies. Subsequently, the semiconductor-based integrated circuit industry has led a new generation of information revolution, driving the rapid development of various electronic circuit technologies worldwide. With the physical limitations of the silicon semiconductor process, Moores Law is also approaching its physical limit. In the search for new semiconductor materials, carbon nanotube semiconductors have become one of the candidate materials for new semiconductor materials due to their many advantages, and their many characteristic parameters are even better than those of silicon semiconductors of the same size. This article introduces the research status, performance characteristics, and comparison of silicon-based and carbon-based integrated circuits, as well as the current application scenarios of silicon-based and carbon-based integrated circuits in the industry, and the many problems encountered. Finally, this article analyses the future development direction of the integrated circuit industry and the possible challenges it may face.
45
JANDIERI, K., Z. KACHLISHVILI, E. KHIZANISHVILI y N. METREVELI. "SPATIO-TEMPORAL NONLINEAR DYNAMICS IN A SYSTEM OF ILLUMINATED AND DARK SEMICONDUCTORS". International Journal of Modern Physics B 23, n.º 26 (20 de octubre de 2009): 5093–108. http://dx.doi.org/10.1142/s0217979209054120.
Resumen
Spatio-temporal dynamics in series-connected illuminated and dark semiconductors is studied under conditions of impurity electric breakdown. It is found that in the vicinity of unstable equilibrium points that correspond to the negative differential conductivity of illuminated or dark (or both) semiconductor samples, the nucleation, traveling, and destroying of electrical domains play a crucial role in the nonlinear oscillatory behavior of semiconductors.
46
Tajima, Hiroyuki, Takeshi Oda y Tomofumi Kadoya. "Nonthermal Equilibrium Process of Charge Carrier Extraction in Metal/Insulator/Organic Semiconductor/Metal (MIOM) Junction". Magnetochemistry 9, n.º 7 (11 de julio de 2023): 180. http://dx.doi.org/10.3390/magnetochemistry9070180.
Resumen
This paper presents the concept and experimental evidence for the nonthermal equilibrium (NTE) process of charge carrier extraction in metal/insulator/organic semiconductor/metal (MIOM) capacitors. These capacitors are structurally similar to metal/insulator/semiconductor/(metal) (MIS) capacitors found in standard semiconductor textbooks. The difference between the two capacitors is that the (organic) semiconductor/metal contacts in the MIOM capacitors are of the Schottky type, whereas the contacts in the MIS capacitors are of the ohmic type. Moreover, the mobilities of most organic semiconductors are significantly lower than those of inorganic semiconductors. As the MIOM structure is identical to the electrode portion of an organic field-effect transistor (OFET) with top-contact and bottom-gate electrodes, the hysteretic behavior of the OFET transfer characteristics can be deduced from the NTE phenomenon observed in MIOM capacitors.
47
TREW, R. J. y M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (marzo de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Resumen
Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.
48
Tulyagankhodjaev, Jakhangirkhodja A., Petra Shih, Jessica Yu, Jake C. Russell, Daniel G. Chica, Michelle E. Reynoso, Haowen Su et al. "Room-temperature wavelike exciton transport in a van der Waals superatomic semiconductor". Science 382, n.º 6669 (27 de octubre de 2023): 438–42. http://dx.doi.org/10.1126/science.adf2698.
Resumen
The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re 6 Se 8 Cl 2 , a van der Waals (vdW) superatomic semiconductor, we demonstrate the formation of acoustic exciton-polarons, an electronic quasiparticle shielded from phonon scattering. We directly imaged polaron transport in Re 6 Se 8 Cl 2 at room temperature, revealing quasi-ballistic, wavelike propagation sustained for a nanosecond and several micrometers. Shielded polaron transport leads to electronic energy propagation lengths orders of magnitude greater than in other vdW semiconductors, exceeding even silicon over a nanosecond. We propose that, counterintuitively, quasi-flat electronic bands and strong exciton–acoustic phonon coupling are together responsible for the transport properties of Re 6 Se 8 Cl 2 , establishing a path to ballistic room-temperature semiconductors.
49
Selvamani, T. y Sambandam Anandan. "Current Perspective of Semiconductor and its Composites with Unusual Surfaces for the Use of Photocatalysis: Review". Materials Science Forum 734 (diciembre de 2012): 138–85. http://dx.doi.org/10.4028/www.scientific.net/msf.734.138.
Resumen
Recently, numerous semiconducting materials and its composites are studied for their photocatalysis applications. These materials having different size, shape and controlled morphology in micro, meso and nanoscale exhibits various important surface features having remarkable applications in photocatalytic degradation of toxic pollutants, hydrogen production and adsorbent for wastewater treatment. However different methods are followed to synthesis semiconductors, metal supported/loaded semiconductors, heterostructures, graphene based semiconductors and other newer materials. In addition, the surface morphologies of these materials and composites for its photo catalytic processes can be explained. Finally the photophysical properties of semiconductor and composite materials with unusual texture will be summarized.
50
Dezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe y Yutaka Oyama. "Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors". Key Engineering Materials 500 (enero de 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Resumen
An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.