Artículos de revistas sobre el tema "Semiconductors - Advance Device Applications"
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Kizilyalli, Isik C., Olga Blum Spahn y Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Transactions 109, n.º 8 (30 de septiembre de 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Texto completoKizilyalli, Isik C., Olga Blum Spahn y Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de octubre de 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Texto completoHasan, Md Nazmul, Edward Swinnich y Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Texto completoYater, J. E. "Secondary electron emission and vacuum electronics". Journal of Applied Physics 133, n.º 5 (7 de febrero de 2023): 050901. http://dx.doi.org/10.1063/5.0130972.
Texto completoKouvetakis, J., Jose Menendez y John Tolle. "Advanced Si-based Semiconductors for Energy and Photonic Applications". Solid State Phenomena 156-158 (octubre de 2009): 77–84. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.77.
Texto completoHe, Yashuo, Haotian Wan, Xiaoning Jiang y Chang Peng. "Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications". Biosensors 13, n.º 1 (29 de diciembre de 2022): 55. http://dx.doi.org/10.3390/bios13010055.
Texto completoAl-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters". CPSS Transactions on Power Electronics and Applications 7, n.º 2 (30 de junio de 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.
Texto completoJiang, He, Jibiao Jin, Zijie Wang, Wuji Wang, Runfeng Chen, Ye Tao, Qin Xue, Chao Zheng, Guohua Xie y Wei Huang. "Constructing Donor-Resonance-Donor Molecules for Acceptor-Free Bipolar Organic Semiconductors". Research 2021 (9 de febrero de 2021): 1–10. http://dx.doi.org/10.34133/2021/9525802.
Texto completoOshima, Yuichi y Elaheh Ahmadi. "Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications". Applied Physics Letters 121, n.º 26 (26 de diciembre de 2022): 260501. http://dx.doi.org/10.1063/5.0126698.
Texto completoCarlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu y Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates". Materials Science Forum 924 (junio de 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.
Texto completoKim, Hanul, Inayat Uddin, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang y Gil-Ho Kim. "Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping". Nanomaterials 13, n.º 10 (22 de mayo de 2023): 1700. http://dx.doi.org/10.3390/nano13101700.
Texto completoPeterson, Brennan, Michael Kwan, Fred Duewer, Andrew Reid y Rhiannon Brooks. "Optimizing X-Ray Inspection for Advanced Packaging Applications". International Symposium on Microelectronics 2020, n.º 1 (1 de septiembre de 2020): 000165–68. http://dx.doi.org/10.4071/2380-4505-2020.1.000165.
Texto completoMedjdoub, Farid. "Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications". Micromachines 12, n.º 1 (15 de enero de 2021): 83. http://dx.doi.org/10.3390/mi12010083.
Texto completoKhramtsov, Igor A. y Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors". Materials 12, n.º 12 (19 de junio de 2019): 1972. http://dx.doi.org/10.3390/ma12121972.
Texto completoSyed Ahsan Ali Shah, Ahsanali. "Overview of Power Electronic Devices & its Application Specifically Wide Band Gap and GaN HEMTs". International Journal of Sciences and Emerging Technologies 1, n.º 1 (5 de agosto de 2022): 39–49. http://dx.doi.org/10.56536/ijset.v1i1.21.
Texto completoHasegawa, Hideki, Hajime Fujikura y Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires". MRS Bulletin 24, n.º 8 (agosto de 1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.
Texto completoPan, James, Shamima Afroz, Scott Suko, James D. Oliver y Thomas Knight. "High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide". Materials Science Forum 924 (junio de 2018): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.924.641.
Texto completoJiang, Sai, Qinyong Dai, Jianhang Guo y Yun Li. "In-situ/operando characterization techniques for organic semiconductors and devices". Journal of Semiconductors 43, n.º 4 (1 de abril de 2022): 041101. http://dx.doi.org/10.1088/1674-4926/43/4/041101.
Texto completoZhang, Yu-Xin, Chien-Hung Wu, Kow-Ming Chang, Yi-Ming Chen, Ni Xu y Kai-Chien Tsai. "Effects of P-Type SnOx Thin-Film Transistors with N2 and O2 Ambient Furnace Annealing". Journal of Nanoscience and Nanotechnology 20, n.º 7 (1 de julio de 2020): 4069–72. http://dx.doi.org/10.1166/jnn.2020.17554.
Texto completoMajety, Sridhar, Pranta Saha, Victoria A. Norman y Marina Radulaski. "Quantum information processing with integrated silicon carbide photonics". Journal of Applied Physics 131, n.º 13 (7 de abril de 2022): 130901. http://dx.doi.org/10.1063/5.0077045.
Texto completoYuan, Chao, Riley Hanus y Samuel Graham. "A review of thermoreflectance techniques for characterizing wide bandgap semiconductors’ thermal properties and devices’ temperatures". Journal of Applied Physics 132, n.º 22 (14 de diciembre de 2022): 220701. http://dx.doi.org/10.1063/5.0122200.
Texto completoRen, Shiwei y Abderrahim Yassar. "Recent Research Progress in Indophenine-Based-Functional Materials: Design, Synthesis, and Optoelectronic Applications". Materials 16, n.º 6 (20 de marzo de 2023): 2474. http://dx.doi.org/10.3390/ma16062474.
Texto completoZhao, Dong, Zhelin Lin, Wenqi Zhu, Henri J. Lezec, Ting Xu, Amit Agrawal, Cheng Zhang y Kun Huang. "Recent advances in ultraviolet nanophotonics: from plasmonics and metamaterials to metasurfaces". Nanophotonics 10, n.º 9 (24 de mayo de 2021): 2283–308. http://dx.doi.org/10.1515/nanoph-2021-0083.
Texto completoSimon, John, Kevin Schulte, Kelsey Horowitz, Timothy Remo, David Young y Aaron Ptak. "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy". Crystals 9, n.º 1 (20 de diciembre de 2018): 3. http://dx.doi.org/10.3390/cryst9010003.
Texto completoHung, Yu-Hsin. "Improved Ensemble-Learning Algorithm for Predictive Maintenance in the Manufacturing Process". Applied Sciences 11, n.º 15 (25 de julio de 2021): 6832. http://dx.doi.org/10.3390/app11156832.
Texto completoHuff, Michael. "Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication". Micromachines 12, n.º 8 (20 de agosto de 2021): 991. http://dx.doi.org/10.3390/mi12080991.
Texto completoStabach, Jennifer, Zach Cole, Chad B. O'Neal, Brice McPherson, Robert Shaw y Brandon Passmore. "A High Performance Power Package for Wide Bandgap Semiconductors Using Novel Wire Bondless Power Interconnections". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000353–58. http://dx.doi.org/10.4071/isom-2015-wp16.
Texto completoDeitz, Julia, Timothy Ruggles, Stephen Lee, Andrew A. Allerman, C. Barry Carter y Joseph Michael. "(Invited) Electron Channeling Contrast Imaging for Rapid Characterization of Compound Semiconductors". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1254. http://dx.doi.org/10.1149/ma2022-02341254mtgabs.
Texto completoFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 34 (9 de octubre de 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Texto completoWu, Yuanpeng, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis y Zetian Mi. "Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications". Applied Physics Letters 122, n.º 16 (17 de abril de 2023): 160501. http://dx.doi.org/10.1063/5.0145931.
Texto completoConvertino, Clarissa, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund y Lukas Czornomaz. "InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities". Materials 12, n.º 1 (27 de diciembre de 2018): 87. http://dx.doi.org/10.3390/ma12010087.
Texto completoBerberich, Stefan, A. Goñi, Wolfgang Schäper y Manfred Kolm. "Monocrystalline and Polycrystalline SiC in EADS Astrium Space Applications". Materials Science Forum 615-617 (marzo de 2009): 919–24. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.919.
Texto completoPosthill, J. B., D. P. Malta, R. Pickett, M. L. Timmons, T. P. Humphreys y R. J. Markunas. "Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)". Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 838–39. http://dx.doi.org/10.1017/s0424820100171924.
Texto completoKareem, Awaz Adil, Mohammed Kadhim Jaqsi y Issa Mahdi Aziz. "Formulating nanocomposite materials based on polymers to get high performance and extra properties". Technium Sustainability 3 (8 de mayo de 2023): 41–53. http://dx.doi.org/10.47577/sustainability.v3i.8880.
Texto completoGrzybowski, R. R. y B. Gingrich. "High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications". Journal of Engineering for Gas Turbines and Power 121, n.º 4 (1 de octubre de 1999): 622–28. http://dx.doi.org/10.1115/1.2818517.
Texto completoJiang, Chen. "All-Inkjet Printed Organic Thin-Film Transistors with and without Photo-Sensitivity to Visible Lights". Crystals 10, n.º 9 (20 de agosto de 2020): 727. http://dx.doi.org/10.3390/cryst10090727.
Texto completoKar, Shaoni, Nur Fadilah Jamaludin, Natalia Yantara, Subodh G. Mhaisalkar y Wei Lin Leong. "Recent advancements and perspectives on light management and high performance in perovskite light-emitting diodes". Nanophotonics 10, n.º 8 (1 de junio de 2020): 2103–43. http://dx.doi.org/10.1515/nanoph-2021-0033.
Texto completoHu, Yuze, Mingyu Tong, Siyang Hu, Weibao He, Xiang’ai Cheng y Tian Jiang. "Multidimensional engineered metasurface for ultrafast terahertz switching at frequency-agile channels". Nanophotonics 11, n.º 7 (22 de febrero de 2022): 1367–78. http://dx.doi.org/10.1515/nanoph-2021-0774.
Texto completoPandey, R. K., H. Stern, W. J. Geerts, P. Padmini, P. Kale, Jian Dou y R. Schad. "Room Temperature Magnetic-Semicondcutors in Modified Iron Titanates: Their Properties and Potential Microelectronic Devices". Advances in Science and Technology 54 (septiembre de 2008): 216–22. http://dx.doi.org/10.4028/www.scientific.net/ast.54.216.
Texto completoZhang, Jiawei, Josh Wilson y Aimin Song. "(Invited, Digital Presentation) Oxide TFTs Based on Semiconductors and Semimetals". ECS Meeting Abstracts MA2022-02, n.º 35 (9 de octubre de 2022): 1263. http://dx.doi.org/10.1149/ma2022-02351263mtgabs.
Texto completoLate, Dattatray J. y Claudia Wiemer. "Advances in low dimensional and 2D materials". AIP Advances 12, n.º 11 (1 de noviembre de 2022): 110401. http://dx.doi.org/10.1063/5.0129120.
Texto completoChang, Yuhua, Jingxuan Wei y Chengkuo Lee. "Metamaterials – from fundamentals and MEMS tuning mechanisms to applications". Nanophotonics 9, n.º 10 (14 de mayo de 2020): 3049–70. http://dx.doi.org/10.1515/nanoph-2020-0045.
Texto completoHo, Johnny C. "(Invited) From Bulk to Nanostructured Perovskites". ECS Meeting Abstracts MA2022-02, n.º 36 (9 de octubre de 2022): 1307. http://dx.doi.org/10.1149/ma2022-02361307mtgabs.
Texto completoChen, Kunfeng y Dongfeng Xue. "Cu-based materials as high-performance electrodes toward electrochemical energy storage". Functional Materials Letters 07, n.º 01 (febrero de 2014): 1430001. http://dx.doi.org/10.1142/s1793604714300011.
Texto completoMorritt, G. H., H. Michaels y M. Freitag. "Coordination polymers for emerging molecular devices". Chemical Physics Reviews 3, n.º 1 (marzo de 2022): 011306. http://dx.doi.org/10.1063/5.0075283.
Texto completoZhao, Peiyao, Ziming Cai, Longwen Wu, Chaoqiong Zhu, Longtu Li y Xiaohui Wang. "Perspectives and challenges for lead-free energy-storage multilayer ceramic capacitors". Journal of Advanced Ceramics 10, n.º 6 (12 de noviembre de 2021): 1153–93. http://dx.doi.org/10.1007/s40145-021-0516-8.
Texto completoLarson, Lawrence A., Justin M. Williams y Michael I. Current. "Ion Implantation for Semiconductor Doping and Materials Modification". Reviews of Accelerator Science and Technology 04, n.º 01 (enero de 2011): 11–40. http://dx.doi.org/10.1142/s1793626811000616.
Texto completoEl-Feky, Nagham Gamal, Dina Mohamed Ellaithy y Mostafa Hassan Fedawy. "Ultra-wideband CMOS power amplifier for wireless body area network applications: a review". International Journal of Electrical and Computer Engineering (IJECE) 13, n.º 3 (1 de junio de 2023): 2618. http://dx.doi.org/10.11591/ijece.v13i3.pp2618-2631.
Texto completoCui, Can, Junqing Ma, Kai Chen, Xinjie Wang, Tao Sun, Qingpu Wang, Xijian Zhang y Yifei Zhang. "Active and Programmable Metasurfaces with Semiconductor Materials and Devices". Crystals 13, n.º 2 (6 de febrero de 2023): 279. http://dx.doi.org/10.3390/cryst13020279.
Texto completoCao, Qing. "(Invited) Two-Dimensional Amorphous Carbon Prepared from Solution Precursor As Novel Dielectrics for Nanoelectronics". ECS Meeting Abstracts MA2022-01, n.º 9 (7 de julio de 2022): 755. http://dx.doi.org/10.1149/ma2022-019755mtgabs.
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