Literatura académica sobre el tema "Semiconductor opening switch"
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Artículos de revistas sobre el tema "Semiconductor opening switch"
Tu, Jing, Jinsheng Luo y Rong Yang. "Mechanism of Semiconductor Opening Switch". Japanese Journal of Applied Physics 46, n.º 3A (8 de marzo de 2007): 897–902. http://dx.doi.org/10.1143/jjap.46.897.
Texto completoChauchard, E. A., C. C. Kung, Chi H. Lee y M. J. Rhee. "Repetitive semiconductor opening switch and application to short pulse generation". Laser and Particle Beams 7, n.º 3 (agosto de 1989): 615–26. http://dx.doi.org/10.1017/s0263034600007588.
Texto completoHashimshony, D., C. Cohen, A. Zigler y K. Papadopoulos. "Switch opening time reduction in high power photoconducting semiconductor switches". Optics Communications 124, n.º 5-6 (marzo de 1996): 443–47. http://dx.doi.org/10.1016/0030-4018(95)00685-0.
Texto completoJiang, Weihua. "Pulsed High-Voltage Generator using Semiconductor Opening Switch". IEEJ Transactions on Fundamentals and Materials 130, n.º 6 (2010): 538–42. http://dx.doi.org/10.1541/ieejfms.130.538.
Texto completoSchoenbach, K. H., V. K. Lakdawala, R. Germer y S. T. Ko. "An optically controlled closing and opening semiconductor switch". Journal of Applied Physics 63, n.º 7 (abril de 1988): 2460–63. http://dx.doi.org/10.1063/1.341022.
Texto completoLyubutin, S., M. Pedos, A. V. Ponomarev, S. Rukin, B. Slovikovsky, S. Tsyranov y P. Vasiliev. "High efficiency nanosecond generator based on semiconductor opening switch". IEEE Transactions on Dielectrics and Electrical Insulation 18, n.º 4 (agosto de 2011): 1221–27. http://dx.doi.org/10.1109/tdei.2011.5976119.
Texto completoIvanov, Pavel A. y Igor V. Grekhov. "Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode". Materials Science Forum 740-742 (enero de 2013): 865–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.865.
Texto completoLyubutin, S. K., S. N. Rukin, B. G. Slovikovsky y S. N. Tsyranov. "Operation of a semiconductor opening switch at ultrahigh current densities". Semiconductors 46, n.º 4 (abril de 2012): 519–27. http://dx.doi.org/10.1134/s106378261204015x.
Texto completoGusev, A. I., S. K. Lyubutin, A. V. Ponomarev, S. N. Rukin y B. G. Slovikovsky. "Semiconductor opening switch generator with a primary thyristor switch triggered in impact-ionization wave mode". Review of Scientific Instruments 89, n.º 11 (noviembre de 2018): 114702. http://dx.doi.org/10.1063/1.5052530.
Texto completoNAMIHIRA, Takao, Takashi SAKUGAWA, Sunao KATSUKI y Hidenori AKIYAMA. "Pulsed Power Generator with Inductive-Energy Storage Using Semiconductor Opening Switch". Journal of Plasma and Fusion Research 81, n.º 5 (2005): 355–58. http://dx.doi.org/10.1585/jspf.81.355.
Texto completoTesis sobre el tema "Semiconductor opening switch"
Degnon, Mawuena. "Étude des commutateurs semi-conducteurs à ouverture destinés à des applications de puissance pulsée avec des tensions de sortie allant jusqu'à 500 kV". Electronic Thesis or Diss., Pau, 2024. https://theses.hal.science/tel-04685830.
Texto completoIn pulsed power systems, inductive energy storage has an advantage over capacitive storage because of its higher energy density. Exploiting this advantage requires the use of an opening switch to generate the voltage pulse. Moreover, the growing need for reliable pulsed power generators, particularly for industrial applications, strongly supports the adoption of solid-state solutions. The Semiconductor Opening Switch (SOS) diode developed in the 1990s at the Institute of Electrophysics in Russia is an ideal candidate for solid-state opening switching because of its ability to reliably generate high-power pulses at high repetition rates while offering long lifetime and maintenance-free operation. However, the lack of SOS diode manufacturers prevents their widespread use. This thesis is therefore devoted to the study of off-the-shelf (OTS) diodes capable of rapidly switching high currents and generating nanosecond voltages of up to 500 kV. The research includes the investigation of various diode types including rectifier, avalanche, fast recovery, and transient voltage suppression (TVS) diodes as opening switches in comparison with state-of-the-art SOS diodes. Low, medium, and high-energy (25 mJ, 10 J, and 40 J respectively) test benches are developed for the experiments. Their circuits use a single magnetic element – a saturable pulse transformer – resulting in high energy efficiency. Several nanocrystalline cores are examined for optimum transformer performance at an energy of 10 J. Among the diodes investigated at 25 mJ and 10 J energy, the TVS and rectifying diodes stand out particularly promising with nanosecond switching time and generated voltages in the kilovolt range. Finally, a 40 J pulsed power generator prototype (GO-SSOS) based on an OTS opening switch consisting of rectifier diodes is developed. The GO-SSOS achieves a peak power of more than 300 MW with an energy efficiency ranging from 35% to 70% depending on the load value. Across a 1 kΩ load, the voltage pulse generated reaches 500 kV amplitude with a rise time of 36 ns and a pulse width of 80 ns. The system shows high reproducibility at a repetition rate of 60 Hz and is used to demonstrate a corona discharge application. The work proves the reliability of the OTS diodes in SOS mode, revealing no degradation after thousands of pulses. It also offers the prospect of using this technology in industrial applications such as electron-beam sterilization
Actas de conferencias sobre el tema "Semiconductor opening switch"
Chauchard, E. A., M. J. Rhee y Chi H. Lee. "Repetitive opening switches using optically activated semiconductors". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fu7.
Texto completoSchoenbach, K. I., V. K. Lakdawala, S. T. Ko, M. S. Mazzola y R. K. F. Germer. "Laser Controlled Semiconductor Closing And Opening Switch". En 1988 Los Angeles Symposium--O-E/LASE '88, editado por Raymond F. Askew. SPIE, 1988. http://dx.doi.org/10.1117/12.943642.
Texto completoSugai, Taichi, Akira Tokuchi y Weihua Jiang. "Experimental characteristics of semiconductor opening switch diode". En 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC). IEEE, 2014. http://dx.doi.org/10.1109/ipmhvc.2014.7287218.
Texto completoRoodenburg, B. "Current source semiconductor opening switch with parallel IGCTs". En Pulsed Power Seminar. IEE, 2003. http://dx.doi.org/10.1049/ic:20030074.
Texto completoCitrin, D. S. y T. B. Norris. "All-Optical Switching at 100-Gb/s Rates via Coherent Control of Excitons in a Semiconductor Microcavity". En Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/ps.1997.pthc5.
Texto completoPanchenko, Alexei N., Victor F. Tarasenko y Alexei E. Tel'minov. "Gas discharge lasers pumped by generators with semiconductor opening switch". En International Conference on Lasers, Applications, and Technologies '07, editado por Vladislav Panchenko, Vladimir Golubev, Andrey Ionin y Alexander Chumakov. SPIE, 2007. http://dx.doi.org/10.1117/12.753211.
Texto completoPanchenko, Alexei N. "Efficient discharge lasers pumped by double-discharge circuits with semiconductor opening switch". En 18th International Symposium on Gas Flow & Chemical Lasers & High Power Lasers, editado por Tanja Dreischuh, Petar A. Atanasov y Nikola V. Sabotinov. SPIE, 2010. http://dx.doi.org/10.1117/12.878396.
Texto completoStoudt, D. C., J. S. Kenney y K. H. Schoenbach. "INDUCTIVE ENERGY STORAGE USING A FAST-OPENING BULK OPTICALLY CONTROLLED SEMICONDUCTOR SWITCH (BOSS)". En Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512892.
Texto completoKotov, Yu A., G. B. Mesyats, S. N. Rukin, A. L. Filatov y S. K. Lyubutin. "A NOVEL NANOSECOND SEMICONDUCTOR OPENING SWITCH FOR MEGAVOLT REPETITIVE PULSED POWER TECHNOLOGY: EXP". En Ninth IEEE International Pulsed Power Conference. IEEE, 1993. http://dx.doi.org/10.1109/ppc.1993.512960.
Texto completoBychkov, Yu, Evgenii H. Baksht, Alexei N. Panchenko, Victor F. Tarasenko, S. A. Yampolskaya y Arkadi G. Yastremsky. "Formation of pumping discharge of XeCl laser by means of semiconductor opening switch". En International Conference on Atomic and Molecular Pulsed Lasers IV, editado por Victor F. Tarasenko, Georgy V. Mayer y Gueorgii G. Petrash. SPIE, 2002. http://dx.doi.org/10.1117/12.460108.
Texto completoInformes sobre el tema "Semiconductor opening switch"
Lee, Chi H. y Moon-Jhong Rhee. Repetitive Opening Switches Using Optically Activated Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, octubre de 1987. http://dx.doi.org/10.21236/ada190196.
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