Tesis sobre el tema "Semiconductor module"
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Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)". Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&.
Texto completowire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that 
hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.
We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced.
This work explores the optical, structural and electronic properties of this promising material whose study &ndash
samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.
Mayne, Anna Louise. "A study of ATLAS semiconductor tracker module distortions and event cleaning with tracking". Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554383.
Texto completoGrummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES". Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Texto completoM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Filsecker, Felipe. "Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848.
Texto completoPoller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
Janík, Daniel. "Provozní parametry LED světelných zdrojů". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316394.
Texto completoGrummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices". Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Texto completoPh.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Dchar, Ilyas. "Conception d’un module d’électronique de puissance «Fail-to-short» pour application haute tension". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI042/document.
Texto completoThe reliability and endurance of high power converters are paramount for future HVDC networks. Generally, module’s failure behavior can be classified as open-circuit failure and short-circuit failure. A module which fails to an open circuit is considered as fatal for applications requiring series connection. Especially, in some HVDC application, modules must be designed such that when a failure occurs, the failed module still able to carry the load current by the formation of a stable short circuit. Such operation is referred to as short circuit failure mode operation. Currently, all commercially available power modules which offer a short circuit failure mode use silicon semiconductors. The benefits of SiC semiconductors prompts today the manufacturers and researchers to carry out investigations to develop power modules with Fail-to-short-circuit capability based on SiC dies. This represents a real challenge to replace silicon power module for high voltage applications in the future. The work presented in this thesis aims to design a SiC power module with failure to short-circuit failure mode capability. The first challenge of the research work is to define the energy leading to the failure of the SiC dies in order to define the activation range of the Fail-to-short mechanism. Then, we demonstrate the need of replacing the conventional interconnections (wire bonds) by massive contacts. Finally, an implementation is presented through a "half bridge" module with two MOSFETs
Guiheneuf, Vincent. "Approche multi-physique du vieillissement des matériaux pour application photovoltaïque". Thesis, Paris Est, 2017. http://www.theses.fr/2017PESC1091/document.
Texto completoThis thesis investigates the aging of photovoltaic (PV) modules based on crystalline silicon technology via a multi-material approach. The first objective is to determine the degradation mechanisms involved during the operation of the PV modules and thus to be able to propose technological solutions improving their durability. For this purpose, accelerated aging tests were carried out on the glass, the crystalline silicon PV cell and the PV mini-module composed of glass, a polymeric encapsulant and the silicon cell.Their functional properties are systematically evaluated and the follow-up of these indicators allows to define aging laws. In parallel, physicochemical characterizations are carried out to determine the degradation mechanisms of the different components of the module. The study of damp heat on glass throws into evidence a surface degradation with a hydration process of the silica network and a leaching phenomenon of the sodium which involves an increase of the glass transmittance. The PV cell exhibits a deterioration of the electrical performance and reflectance after UV radiation exposure due to a photo-oxidation process of the SiNx antireflection layer. It has also been established that high UV power can also promote a regeneration phenomenon of electrical performances. The aging of the mini-module under UV shows the phenomenon of photo-induced degradation (LID) generating a slight decrease in the electrical performance from the first exposure whereas the impact of damp heat on the electrical performance is null after 2000 hours
Muchindu, Munkombwe. "Electrochemical ochratoxin a immunosensors based on polyaniline nanocomposites templated with amine- and sulphate-functionalised polystyrene latex beads". Thesis, University of the Western Cape, 2010. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_3815_1306752491.
Texto completoPolyaniline nanocomposites doped with poly(vinylsulphonate) (PV-SO3 &minus
) and nanostructured polystyrene (PSNP) latex beads functionalized with amine (PSNP-NH2) and sulphate (PSNP-OSO3 &minus
) were prepared and characterised for use as nitrite electro-catalytic chemosensors and ochratoxin A immunosensors. The resultant polyaniline electrocatalytic chemosensors (PANI, PANI|PSNP-NH2 or PANI|PSNP-OSO3 &minus
) were characterized by cyclic voltammetry (CV), ultraviolet-visible (UV-Vis) spectroscopy and scanning electron microscopy (SEM). Brown-Anson analysis of the multi-scan rate CV responses of the various PANI films gave surface concentrations in the order of 10&minus
8 mol/cm. UV-vis spectra of the PANI films dissolved in dimethyl sulphoxide showed typical strong absorbance maxima at 480 and 740 nm associated with benzenoid p-p* transition and quinoid excitons of polyaniline, respectively. The SEM images of the PANI nanocomposite films showed cauliflower-like structures that were <
100 nm in diameter. When applied as electrochemical nitrite sensors, sensitivity values of 60, 40 and 30 &mu
A/mM with corresponding limits of detection of 7.4, 9.2 and 38.2 &mu
M NO2 &minus
, were obtained for electrodes, PANI|PSNP-NH2, PANI and PANI|PSNP-SO3 &minus
, respectively. Immobilisation of ochratoxin A antibody onto PANI|PSNP-NH2, PANI and PANI|PSNPSO3 - resulted in the fabrication of immunosensors.
Gálvez, Sánchez José-Luis. "Analysis of bidirectional switch power modules for matrix converter application". Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/457719.
Texto completoThere is a wide and increasing demand in industrial applications which require bidirectional transfer of power between the AC utility and the load, and vice versa such as: rolling mills, elevators, centrifuges, escalators, renewable energies (wind turbines, photo-voltaic, fuel-cells; smart-grids), electric traction, etc. The possibility of performing a direct AC-AC conversion with the absence of a DC link is a fact thanks to the Matrix Converter (MC) topology. The typical configuration of a MC is based on nine bidirectional switches (BDSs) required to directly connect the three input phases of an AC grid with the three output phases of a load (typically, a motor). Controlling the BDSs in a suitable way, a variable amplitude and frequency can be obtained at the output. Consequently, the key element of the MC implementation is the controlled BDS which must be able to conduct current and block voltage in both polarities (four quadrant I-V operation) and to operate at relatively high switching frequencies. The aim of this thesis is the analysis of the commutation processes in BDSs, the prediction of their power dissipation in typical MC operation and the development of a new controlled bidirectional switch module which integrates the power stage functionality with the intelligence in one component to enhance the modularity and feasibility of MC applications First of all it is important to understand how behave the BDSs within a MC. A SPICE simulation work of a simplified two-phase to single-phase MC was performed in order to analyse the commutation phenomena involved between BDSs. Hard and soft commutations are undergone by the different power devices depending on the voltage across the BDS and the direction of the current through it. Understanding the details of the switching processes allow an optimum definition of the commutation strategies within BDSs and modelling of the switching power losses. The static and dynamic characteristics of several power devices of different technologies used in BDS implementations are also analysed. A switching test circuit based on the aforementioned two-phase to single-phase MC was fabricated for this purpose. This MC test circuit allowed testing discrete BDSs as well as integrated power modules sharing the same power stage and control board. Based on the extracted measured data of the BDSs devices, their conduction and their switching losses were accurately modelled. This thesis describes also the implementation of a computational method to evaluate the conduction and switching losses (hard and soft types) of the power devices within the BDS. Based on the conduction and switching losses models, the power losses of the semiconductor devices are calculated depending on different operating condition of the MC such as the modulation algorithm, the output frequency, the output to input voltage ratio, the load power factor and the switching frequency. All these studies resulted in a practical tool to help the converter designer to select the optimum power devices for a given application and to predict in an accurate way the semiconductors power losses in order to size and implement the suitable cooling system. Finally in this work, an integrated bidirectional switch intelligent power module (BDS-IPM) prototype is designed, built and tested in a three-phase to one-phase MC in order to take a step forward in the practical implementation of MCs. The BDS-IPM is itself a complex power electronics system since many disciplines converge in it: power semiconductor devices, thermal power management, device level control (i.e. gate drive circuits) and high level control (i.e. current commutation strategy implementation, active protection issues).
Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices". Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.
Texto completoShelley, Valerie Anderson 1957. "Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.
Texto completoFurfaro, Luca. "Dynamique modale des lasers à semiconducteur". Nice, 2003. http://www.theses.fr/2003NICE4094.
Texto completoLa dinamica modale dei laser a semiconduttore è l’argomento di questa tesi. In particolare, presentiamo un nuovo tipo di comportamento dinamico caratterizzato da oscillazioni periodiche dell’intensit`a modale, con un’intensità totale d’emissione costante. Abbiamo effettuato una serie di misure sistematiche su una larga gamma di laser a “buca quantica” (quantum well, QW) ed abbiamo verificato che queste oscillazioni periodiche dell’intensità modale sono una caratteristica generale per questo tipo di dispositivo. Abbiamo definito in quali regioni dei parametri si osservi questa dinamica e come quest’ultima si modifichi cambiando i parametri di controllo esterni (temperatura e corrente di pompa). Questo nuovo tipo di dinamica è estremamente stabile ed insensibile al rumore elettrico ed ottico. Uno studio dettagliato è stato effettuato sugli effetti della retroazione ottica: la dinamica pu`o essere modificata in modo drastico in funzione della fase e del”intensit`a della retroazione. Abbiamo confrontato la statistica dei laser a semiconduttore a QW con quella dei laser “bulk” sottolineando la diversa natura fisica della dinamica osservata nei due tipi di laser. Con l’aiuto d’un modello teorico che spiega le osservazioni sperimentali nei laser a semiconduttore a QW, si constata che l’interazione a quattro onde è l’elemento dominante per la comparsa di tale comportamento dinamico. L’ordine dell’accensione dei modi è spiegato grazie all’asimmetria della risposta ottica nei materiali a semiconduttore
The modal dynamics of semiconductor lasers is the subject of this thesis. We present a new kind of dynamics characterized by periodic oscillations of the modal intensity and constant total intensity. We perform systematic measurements on several QW lasers and verify that the periodic oscillations of the modal intensity are a general characteristic for this kind of device. We study the parameter range where we can observe this dynamics and how its temporal and spectral features are affected by changes in the control parameters (temperature and pumping current). This new kind of dynamics is very robust and insensitive to electrical and optical noise. We perform a ample study on the effects of optical feedback: substantial changes can be observed as a function of the intensity and phase of the feedback. We compare the statistics of bulk and QW semiconductor lasers and show the different physical nature of the observed dynamics for these two kinds of lasers. With the help of a new theoretical model, which explains the experimental observations in QW lasers, we show that four-wave-mixing is the dominant mechanism for the appearance of the observed dynamics. The sequence of mode switching is explained from the spectral asymmetry of the optical response in semiconductor media
Kesserwani, Joseph. "Développement et implantation d’un modèle de diode par VHDL-AMS : Discrétisation selon la méthode Scharfetter-Gummel". Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0073/document.
Texto completoComputer-aided design (CAD) is widely used in the semiconductor industry for the design and analysis of individual components whose study is to solve the drift-diffusion equation and the Poisson equation. The nonlinear characteristic of these equations request interactive digital solutions. The diagram Scharfetter-Gummel is conventionally used to discretize the non-degenerate drift-diffusion equation (or equation Schockley) to simulate particle transport phenomena "electrons and holes" in a semiconductor. Initially this method was applied to a one-dimensional domain. Subsequently, this method was extended to the two-dimensional problem on the basis of a rectangular mesh. So the aim of this thesis is to implement a VHDL-AMS diode model based on the discretization using the Scharfetter-Gummel method. The VHDL-AMS (Hardware Description Language - Analog Mixed Signal) is a behavioral description language for analog and mixed circuits. Inspired by its equivalent for logic circuits, VHDL, VHDL-AMS would be an extension. Since the VHDL-AMS is high level, this will allow us to model the behavior of physical systems, electrical, mechanical or otherwise. Meanwhile VHDL-AMS can create modules, called "entities". These are defined by their external ports (which are an interface with other architectures or entities) and by mathematical equations. The ability to use mathematical relationships directly in the description of the model gives us great flexibility. Like all analog behavioral description languages, VHDL-AMS is initially dedicated to the modeling of the type "high level" as the modeling of complete electronic systems. The use of such a language in order to achieve a diode model thus constitutes an alternative to the latter. Due to the large number of node it is necessary to generate the VHDL-AMS code from a Matlab-based interface. The results obtained by this method will be compared with others from various softwares. The model design will aim: - Match the specifications originally drawn by designers and in order to allow them to highlight the different characteristics of the modules. - Easily Simulate integration and / or the component adequacy in a given system - Be designed so that it is used in more complex components. -Finally We plan to conduct experimental measures in order to verify the accuracy of our model
Rodriguez, Maria P. "Thermal characterisation and reliability study of advanced high power modules using finite element techniques". Thesis, Staffordshire University, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364813.
Texto completoMalape, Maibi Aaron. "Low temperature growth of Amorphous Silicon thin film". Thesis, University of the Western Cape, 2007. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_7768_1254727160.
Texto completoThe growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS,FITR,ERDA, XRD.XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.
Simpson, James. "Theoretical studies of Jahn-Teller impurity ion complexes in III-V semiconductors". Thesis, University of Nottingham, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329837.
Texto completoSalem, Ali F. "Advanced numerical simulation modeling for semiconductor devices and it application to metal-semiconductor-metal photodetectors". Diss., Georgia Institute of Technology, 1995. http://hdl.handle.net/1853/13834.
Texto completoAdams, Stephen E. "Semiconductor device modelling using the multigrid method". Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/27787.
Texto completoScience, Faculty of
Mathematics, Department of
Graduate
Habib, Mohammad Humayun. "Semiconductor P-N Junction Space Charge Region Capacitance". PDXScholar, 1992. https://pdxscholar.library.pdx.edu/open_access_etds/4589.
Texto completoWeil, Thierry. "Etude theorique du transport perpendiculaire aux couches dans les semiconducteurs 3-5 modules suivant une dimension". Paris 6, 1987. http://www.theses.fr/1987PA066099.
Texto completoSmith, Arlynn W. "Light confinement and hydrodynamic modeling of semiconductor structures by volumetric methods". Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/13407.
Texto completoColes, Richard A. "Theory of the electronic states of semiconductor heterostructures". Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4495/.
Texto completoKitchin, Matthew Roger. "Theory of semiconductor heterostructures for infrared applications". Thesis, University of Newcastle Upon Tyne, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.300192.
Texto completoGay, Simon Christopher Anthony. "Theoretical studies of adsorbate covered semiconductor surfaces". Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302534.
Texto completoRacca, Stephen Douglas. "Improving operational efficiency of a semiconductor equipment manufacturing warehouse through effective utilization of Vertical Lift Modules". Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/101335.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (pages 59-60).
This thesis deals with improving the operational efficiency of automated part storage devices, in this case Vertical Lift Modules (VLM). This was accomplished by using dynamic slotting to maximize and maintain high material throughput, eliminating the need for periodic reslotting. Multiple VLMs can be used in parallel picking operations to improve material throughput. Common industry practice is to periodically reslot items once an unbalanced workload is obvious. This thesis investigates a method to avoid periodic reslotting by using incoming parts as a means to maintain a balanced workload amongst VLMs. Three different part allocation strategies are compared, namely Randomization, Snake and Order Grouping to determine their effectiveness and respective feasibility. The three strategies are then crafted into logical systems that could be used to strategically place received parts and eliminate the need for periodic reslotting. The Snake method was found to be the most well suited for this particular situation due to the small order sizes. This method provides a 35% savings in pick time, which is equivalent to approximately 733 hours annually.
by Stephen Douglas Racca.
M. Eng. in Manufacturing
Kim, Hyun-Woong. "CMOS RF transmitter front-end module for high-power mobile applications". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47592.
Texto completoLee, Seungwon. "Laser excited and multiply charged semiconductor quantum dots modeled by empirical tight binding /". The Ohio State University, 2002. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486462067842958.
Texto completoIVERSON, ARTHUR EVAN. "THE MATHEMATICAL MODELING OF TIME-DEPENDENT PHOTOCONDUCTIVE PHENOMENA IN SEMICONDUCTORS". Diss., The University of Arizona, 1987. http://hdl.handle.net/10150/184068.
Texto completoHe, Jianqing. "Finite difference time domain simulation of subpicosecond semiconductor optical devices". Diss., This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-05042006-164534/.
Texto completoSendon, Perez Juan Alejandro. "Risk minimization through metrology in semiconductor manufacturing". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEM022.
Texto completoThis thesis consists in analyzing the different properties of metrology workshops, proposing novel approaches to optimize sampling rates and developing new dynamic strategies for risk reduction in semiconductor manufacturing.A thorough analysis of metrology workshops in the site of Rousset of STMicroelectronics has been carried out. Their physical properties and also their characteristics, such as measure qualification, lot sampling and dispatching strategy and risk levels, are considered. Also, a new procedure is developed that helps to determine which sampling strategy fits better according to the metrology workshop characteristics and risk values.New approaches are then proposed to optimize the sampling rates for different types of metrology tools respecting the metrology capacity and taking into account parameters such as throughput rates of process machines and metrology tools, and the failure probabilities of process machines. The numerical experiments show that the metrology capacity is better used and process machines are efficiently controlled, depending on their characteristics, paying more attention the critical machines.In the final part of the thesis, simulation models of several metrology workshops are developed. These models reproduce the behaviour of the workshops to better understand them and to evaluate the impact of proposed improvements
Pradeep, Kumar Anjali. "Chemo-Thermo Cure of Viscoelastic Materials for Semiconductor Packaging Applications". PDXScholar, 2018. https://pdxscholar.library.pdx.edu/open_access_etds/4537.
Texto completoChen, Quan y 陈全. "Efficient high-frequency electromagnetic simulation in VLSI: rough surface effects and electromagnetic-semiconductor coupled simulation". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B44904940.
Texto completo李華剛 y Eddie Herbert Li. "Narrow-channel effect in MOSFET". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.
Texto completoXu, Yuanzhe y 徐远哲. "Variational analysis for 3D integrated circuit on-chip structures based on process-variation-aware electromagnetic-semiconductor coupledsimulation". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47047616.
Texto completoLiu, Wenxian. "Interpreting and forecasting the semiconductor industry cycle". free to MU campus, to others for purchase, 2002. http://wwwlib.umi.com/cr/mo/fullcit?p3060119.
Texto completoBradley, Frank Mitchell. "Transport imaging for the study of quantum scattering phenomena in next generation Semiconductor devices /". Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Dec%5FBradley.pdf.
Texto completoPellecuer, Guillaume. "Fatigue thermomécanique des connexions dans les modules de puissance à semi-conducteurs". Thesis, Montpellier, 2019. http://www.theses.fr/2019MONTS038.
Texto completoThe thesis topic is the aging of semiconductor power modules. During operation, these modules undergo a specific heating which can vary cyclically over time when the application requires a variable electric mode. This is referred to as thermal cycling, a mechanism that imposes significant thermomechanical stresses developed by the internal connections and can lead to their damage. This problem constitutes the core of the thesis work. It will rely on the integration of adapted constitutive behavioural laws into "finite element" software tools to study a module representative of current technology. From an experimental standpoint, the implementation of tests on "classical" modules is relatively complex and the exploitation of the results by imaging techniques requires significant preliminary work. To overcome these drawbacks, the work presented here proposes a specific sample production approach focusing on the ageing of a bonding wire. The use of these new test vehicles makes the monitor damage easier as well as post-ageing analysis. In addition, ageing studies on generic modules for different cycling frequencies should help us to better understand the hypothesis of the independence of fatigue with respect to cycling speed
Yoon, Sangwoong. "LC-tank CMOS Voltage-Controlled Oscillators using High Quality Inductor Embedded in Advanced Packaging Technologies". Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4887.
Texto completoCamiola, Vito Dario. "Subbands model for semiconductors based on the Maximum Entropy Principle". Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1313.
Texto completoMcGarvey, Brian Scott. "Coupling of Solid-State and Electromagnetic Equations for the Computationally Efficient Time-Domain Modeling and Design of Wireless Packaged Geometries with NonlinearActive Devices". Thesis, Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14551.
Texto completoHascoët, Stanislas. "Mise en oeuvre de nouveaux matériaux d’assemblage dans les modules multipuces de puissance (MCM)". Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0123/document.
Texto completoUse of wide band gap chip in the power electronic industry requires an optimization of the close environment (packaging). Indeed, the can often sustain lower temperature than the die, especially the solder that are used to bond the parts of the module. Consequently, new bonding methods are investigated to enhance the performance of the packages. Silver sintering bonding technique is one the most promising. This method allow to bond parts at moderate temperature and the formed joint to operate at very high temperature (until the melting point of silver). This work is focused on the development of this bonding technique in the case of bonding a dies on a substrate. A study of the influence of the different parameters on the strength of the formed bond has been done. It revealed a major influence of the finishes of the bonded parts. Bonding on silver finished substrate results in good mechanical strength of the bond even after ageing. Furthermore, no interface issues are observed. However, the most used finish for power electronic is not silver but nickel-gold. Regarding this type of finish, the bond quality depends on the gold thickness, sintering profile and also sintering atmosphere. A solid solution of silver and gold seems to develop on the surface of the substrate, decreasing the section of the silver grains in contact with the substrate. Thus the mechanical strength of the assembly is decreased. This effect should be limited by the gold available for the Au-Ag solid solution growth. When sintering under nitrogen, the diffusion of silver on the gold surface is much lower than under air. Good results have been obtained with these configurations and even after ageing. Adding pressure during the thermal treatment seems also to minimize the phenomenon, probably by increasing the number of silver grains in contact with the substrate surface and so reducing the free surface for Au-Ag layer formation. Those results have been used to build prototypes, one of whom has been electrically tested with success at temperatures up to 300°C
JURE, LIONEL. "Nanostructures sur substrat semiconducteur". Université Joseph Fourier (Grenoble), 2000. http://www.theses.fr/2000GRE10113.
Texto completoArnoult, Alexandre. "Dopage par modulation d'hétérostructures de semiconducteurs II-VI semimagnétiques en épitaxie par jets moléculaires". Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10237.
Texto completoMueller, Ralph. "Specification and Automatic Generation of Simulation Models with Applications in Semiconductor Manufacturing". Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16147.
Texto completoRaszmann, Emma Barbara. "Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control". Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/95938.
Texto completoMaster of Science
According to ABB, 40% of the world's power demand is supplied by electrical energy. Specifically, in 2018, the world's electrical demand has grown by 4% since 2010. The growing need for electric energy makes it increasingly essential for systems that can efficiently and reliably convert and control energy levels for various end applications, such as electric motors, electric vehicles, data centers, and renewable energy systems. Power electronics are systems by which electrical energy is converted to different levels of power (voltage and current) depending on the end application. The use of power electronics systems is critical for controlling the flow of electrical energy in all applications of electric energy generation, transmission, and distribution. Advances in power electronics technologies, such as new control techniques and manufacturability of power semiconductor devices, are enabling improvements to the overall performance of electrical energy conversion systems. Power semiconductor devices, which are used as switches or rectifiers in various power electronic converters, are a critical building block of power electronic systems. In order to enable higher output power capability for converter systems, power semiconductor switches are required to sustain higher levels of voltage and current. Wide bandgap semiconductor devices are a particular new category of power semiconductors that have superior material properties compared to traditional devices such as Silicon (Si) Insulated-Gate Bipolar Junction Transistors (IGBTs). In particular, wide bandgap devices such as Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have better ruggedness and thermal capabilities. These properties provide wide bandgap semiconductor devices to operate at higher temperatures and switching frequencies, which is beneficial for maximizing the overall efficiency and volume of power electronic converters. This work investigates a method of scaling up voltage in particular for medium-voltage power conversion, which can be applied for a variety of application areas. SiC MOSFET devices are becoming more attractive for utilization in medium-voltage high-power converter systems due to the need to further improve the efficiency and density of these systems. Rather than using individual high voltage rated semiconductor devices, this thesis demonstrates the effectiveness of using several low voltage rated semiconductor devices connected in series in order to operate them as a single switch. Using low voltage devices as a single series-connected switch rather than a using single high voltage switch can lead to achieving a lower total on-state resistance, expectedly maximizing the overall efficiency of converter systems for which the series-connected semiconductor switches would be applied. In particular, this thesis focuses on the implementation of a newer approach of compensating for the natural unbalance in voltage between series-connected devices. An active gate control method is used for monitoring and regulating the switching speed of several devices operated in series in this work. The objective of this thesis is to investigate the feasibility of this method in order to achieve up to 6 kV total dc bus voltage using eight series-connected SiC MOSFET devices.
Liu, Yu [Verfasser] y Andreas [Gutachter] Lindemann. "Contribution to improve the EMI performance of electrical drive systems in vehicles with special consideration of power semiconductor modules / Yu Liu ; Gutachter: Andreas Lindemann". Magdeburg : Universitätsbibliothek Otto-von-Guericke-Universität, 2021. http://d-nb.info/1237047587/34.
Texto completoNiclot, Bernard. "Etude numerique de l'equation de boltzmann des semiconducteurs par methode particulaire". Palaiseau, École polytechnique, 1988. http://www.theses.fr/1988EPXXX002.
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