Libros sobre el tema "Semiconductor module"
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International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.
Buscar texto completoCorporation, Mitsubishi Electric. Mitsubishi semiconductors: Memories module : data book. Tokyo: Mitsubishi Electric Corporation, 1992.
Buscar texto completoCorporation, Mitsubishi Electric. Mitsubishi semiconductors 1994: Memories module (data book). Tokyo: Mitsubishi Electric Corporation, 1994.
Buscar texto completoInternational, Semikron, ed. Application manual power modules. Ilmenau: ISLE, 2000.
Buscar texto completoP, Colino Ronald, ed. Power electronic modules: Design and manufacture. Boca Raton: CRC Press, 2005.
Buscar texto completoBaranowski, Jerzy Hubert. Sekcyjne modele ładunkowe diod i tranzystorów bipolarnych. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1985.
Buscar texto completoSnowden, Christopher M. Semiconductor device modelling. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1988.
Buscar texto completoChristopher, Snowden, ed. Semiconductor device modelling. London: Springer-Verlag, 1989.
Buscar texto completoMarvin, Coughran William, ed. Semiconductors. New York: Springer-Verlag, 1994.
Buscar texto completoThe stationary semiconductor device equations. Wien: Springer-Verlag, 1986.
Buscar texto completoM, Snowden Christopher y Miles R. E. 1943-, eds. Compound semiconductor device modelling. London: Springer-Verlag, 1993.
Buscar texto completoIntroduction to semiconductor device modelling. Singapore: World Scientific, 1986.
Buscar texto completoE, Carroll John. Distributed feedback semiconductor lasers. London, UK: The Institution of Electrical Engineers, 1998.
Buscar texto completo1957-, Ringhofer C. A. y Schmeiser C. 1958-, eds. Semiconductor equations. Wien: Springer-Verlag, 1990.
Buscar texto completoVeprek, Ratko G. Computational modeling of semiconductor nanostructures for optelectronics. Konstanz: Hartung-Gorre, 2009.
Buscar texto completoKircher, R. Three-dimensional simulation of semiconductor devices. Basel: Birkhäuser Verlag, 1991.
Buscar texto completoKircher, R. Three-dimensional simulation of semiconductor devices. Basel: Birkhäuser Verlag, 1991.
Buscar texto completoKells, Kevin. General electrothermal semiconductor device simulation. Konstanz: Hartung-Gorre Verlag, 1994.
Buscar texto completoQuantum-mechanical modeling of transport parameters for MOS devices. Konstanz: Hartnung-Gorre, 2006.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2011.
Buscar texto completo1919-, Finlayson D. M., ed. Localisation and interaction in disordered metals and doped semiconductors: Proceedings of the Thirty-First Scottish Universities' Summer School in Physics, St. Andrews, August 1986 : a NATO Advanced Study Institute. Edinburgh: The School, 1986.
Buscar texto completoTsividis, Yannis. Operation and modeling of the MOS transistor. 3a ed. New York: Oxford University Press, 2010.
Buscar texto completoSaijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.
Buscar texto completoMolenaar, J. Multigrid methods for semiconductor device simulation. Amsterdam, the Netherlands: Centrum voor Wiskunde en Informatica, 1993.
Buscar texto completoM, Meyyappan, ed. Computational modeling in semiconductor processing. Boston: Artech House, 1995.
Buscar texto completoMarchenko, Aleksey y Mihail Nemcov. Electronics. ru: INFRA-M Academic Publishing LLC., 2023. http://dx.doi.org/10.12737/1587595.
Texto completo1955-, Selberherr Siegfried, Stippel H, Strasser E y International Conference on Simulation of Semiconductor Devices and Processes (5th : 1993 : Technical University of Vienna, Austria), eds. Simulation of semiconductor devices and processes, vol. 5. Vienna: Springer-Verlag, 1993.
Buscar texto completoMoglestue, C. Monte Carlo simulation of semiconductor devices. London: Chapman & Hall, 1993.
Buscar texto completoTomizawa, Kazutaka. Numerical simulation of submicron semiconductor devices. Boston: Artech House, 1993.
Buscar texto completoGruber, Harald. Learning and strategic product innovation: Theory and evidence for the semiconductor industry. Amsterdam: North-Holland, 1994.
Buscar texto completoB, Elliot Thomas, ed. Trends in semiconductor research. Hauppauge, N.Y: Nova Science Publishers, 2005.
Buscar texto completoB, Elliot Thomas, ed. Focus on semiconductor research. Hauppauge, N.Y: Nova Science Publishers, 2005.
Buscar texto completoTransport equations for semiconductors. Berlin: Springer, 2009.
Buscar texto completoSchneider, Lutz. Multidimensional modeling and simulation of wavelength-tunable semiconductor lasers. Konstanz: Hartung-Gorre, 2006.
Buscar texto completoWilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoL, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoL, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.
Buscar texto completoHisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.
Buscar texto completoOdermatt, Stefan. Physics and simulation of semiconductor lasers: Static and dynamic characteristics. Konstanz: Hartung-Gorre, 2006.
Buscar texto completoBalance equation approach to electron transport In semiconductors. Hackensack, NJ: World Scientific, 2008.
Buscar texto completoBürgler, Josef F. Discretization and grid adaptation in semiconductor device modeling. Konstanz: Hartung-Gorre, 1990.
Buscar texto completoInternational Conference on Simulation of Semiconductor Processes and Devices (12th 2007 Vienna, Austria). Simulation of semiconductor processes and devices, 2007: SISPAD 2007. Wien: Springer Verlag, 2007.
Buscar texto completoJerome, Joseph W. Analysis of charge transport: A mathematical study of semiconductor devices. Berlin: Springer-Verlag, 1996.
Buscar texto completoEngström, Olof. The MOS system. Cambridge: Cambridge University Press, 2014.
Buscar texto completoInternational Workshop on the Numerical Modelling of Semiconductors (1st 1986 Los Angeles, Calif.). Fundamental research on the numerical modelling of semiconductor devices and processes: Papers from NUMOS I, the First International Workshop on the Numerical Modelling of Semiconductors, 11th-12th December 1986, Los Angeles, USA. Dún Laoghaire, Co. Dublin, Ireland: Boole, 1987.
Buscar texto completoDuen, Ho Fat y United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Buscar texto completoDuen, Ho Fat y United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.
Buscar texto completoCharge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.
Buscar texto completoInternational Conference on Simulation of Semiconductor Processes and Devices (2004 Munich, Germany). Simulation of semiconductor processes and devices 2004: SISPAD 2004. Wien: Springer, 2004.
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