Literatura académica sobre el tema "Semiconductor module"
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Artículos de revistas sobre el tema "Semiconductor module"
Resutík, Patrik y Slavomír Kaščák. "Compact 3 × 1 Matrix Converter Module Based on the SiC Devices with Easy Expandability". Applied Sciences 11, n.º 20 (9 de octubre de 2021): 9366. http://dx.doi.org/10.3390/app11209366.
Texto completoSeki, Kyoshiro, Yoshitaka Tsunekawa, Hiroshi Osada, Jun-Ichi Shida y Koichi Murakami. "Multisensor module using magnetic semiconductor ferrite". Electronics and Communications in Japan (Part II: Electronics) 73, n.º 4 (1990): 46–53. http://dx.doi.org/10.1002/ecjb.4420730406.
Texto completoYau, Chin Horng, Wen Ren Jong y H. H. Wang. "Design and Analysis of SCARA Substrate Transfer Robot for Semiconductor and FPD Processing Cluster Tools". Materials Science Forum 505-507 (enero de 2006): 331–36. http://dx.doi.org/10.4028/www.scientific.net/msf.505-507.331.
Texto completoWang, Yangang, Yibo Wu, Xiaoping Dai, Steve Jones y Guoyou Liu. "Investigation of Automotive Power Semiconductor Module Operates at Elevated Cooling Temperature". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (1 de enero de 2015): 000154–60. http://dx.doi.org/10.4071/hiten-session5-paper5_1.
Texto completoMorgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins y Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.
Texto completoAnzai, Takeshi, Yoshinori Murakami, Shinji Sato, Hidekazu Tanisawa, Kohei Hiyama, Hiroki Takahashi, Fumiki Kato y Hiroshi Sato. "Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices". Journal of Microelectronics and Electronic Packaging 12, n.º 3 (1 de julio de 2015): 153–60. http://dx.doi.org/10.4071/imaps.464.
Texto completoXu Dan, 徐丹, 黄雪松 Huang Xuesong, 姜梦华 Jiang Menghua, 惠勇凌 Hui Yongling, 雷訇 Lei Hong y 李强 Li Qiang. "500 W fiber-coupled semiconductor laser module". Infrared and Laser Engineering 45, n.º 6 (2016): 0606003. http://dx.doi.org/10.3788/irla201645.0606003.
Texto completoAbdesselam, A., P. J. Adkin, P. P. Allport, J. Alonso, L. Andricek, F. Anghinolfi, A. A. Antonov et al. "The ATLAS semiconductor tracker end-cap module". Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 575, n.º 3 (junio de 2007): 353–89. http://dx.doi.org/10.1016/j.nima.2007.02.019.
Texto completoEl-Awady, K., C. D. Schaper y T. Kailath. "Programmable Thermal Processing Module for Semiconductor Substrates". IEEE Transactions on Control Systems Technology 12, n.º 4 (julio de 2004): 493–509. http://dx.doi.org/10.1109/tcst.2004.824775.
Texto completoParker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash y Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair". Materials Science Forum 717-720 (mayo de 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Texto completoTesis sobre el tema "Semiconductor module"
Halindintwali, Sylvain. "A study of hydrogenated nanocrystalline silicon thin films deposited by hot-wire chemical vapour deposition (HWCVD)". Thesis, University of the Western Cape, 2005. http://etd.uwc.ac.za/index.php?module=etd&.
Texto completowire chemical vapour deposition (HWCVD) technique and have been characterised for their performance. It is noticed that 
hydrogenated nanocrystalline silicon is similar in some aspects (mainly optical) to its counterpart amorphous silicon actually used as the intrinsic layer in the photovoltaic industry. Substantial differences between the two materials have been found however in their respective structural and electronic properties.
We show that hydrogenated nanocrystalline silicon retains good absorption coefficients known for amorphous silicon in the visible region. The order improvement and a reduced content of the bonded hydrogen in the films are linked to their good stability. We argue that provided a moderate hydrogen dilution ratio in the monosilane gas and efficient process pressure in the deposition chamber, intrinsic hydrogenated nanocrystalline silicon with photosensitivity better than 102 and most importantly resistant to the Staebler Wronski effect (SWE) can be produced.
This work explores the optical, structural and electronic properties of this promising material whose study &ndash
samples have been exclusively produced in the HWCVD reactors based in the Solar Cells laboratory of the Physics department at the University of the Western Cape.
Mayne, Anna Louise. "A study of ATLAS semiconductor tracker module distortions and event cleaning with tracking". Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554383.
Texto completoGrummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES". Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.
Texto completoM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Filsecker, Felipe. "Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module". Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848.
Texto completoPoller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices". Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2014. https://monarch.qucosa.de/id/qucosa%3A20135.
Texto completoFür die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
Janík, Daniel. "Provozní parametry LED světelných zdrojů". Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316394.
Texto completoGrummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices". Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.
Texto completoPh.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Dchar, Ilyas. "Conception d’un module d’électronique de puissance «Fail-to-short» pour application haute tension". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI042/document.
Texto completoThe reliability and endurance of high power converters are paramount for future HVDC networks. Generally, module’s failure behavior can be classified as open-circuit failure and short-circuit failure. A module which fails to an open circuit is considered as fatal for applications requiring series connection. Especially, in some HVDC application, modules must be designed such that when a failure occurs, the failed module still able to carry the load current by the formation of a stable short circuit. Such operation is referred to as short circuit failure mode operation. Currently, all commercially available power modules which offer a short circuit failure mode use silicon semiconductors. The benefits of SiC semiconductors prompts today the manufacturers and researchers to carry out investigations to develop power modules with Fail-to-short-circuit capability based on SiC dies. This represents a real challenge to replace silicon power module for high voltage applications in the future. The work presented in this thesis aims to design a SiC power module with failure to short-circuit failure mode capability. The first challenge of the research work is to define the energy leading to the failure of the SiC dies in order to define the activation range of the Fail-to-short mechanism. Then, we demonstrate the need of replacing the conventional interconnections (wire bonds) by massive contacts. Finally, an implementation is presented through a "half bridge" module with two MOSFETs
Guiheneuf, Vincent. "Approche multi-physique du vieillissement des matériaux pour application photovoltaïque". Thesis, Paris Est, 2017. http://www.theses.fr/2017PESC1091/document.
Texto completoThis thesis investigates the aging of photovoltaic (PV) modules based on crystalline silicon technology via a multi-material approach. The first objective is to determine the degradation mechanisms involved during the operation of the PV modules and thus to be able to propose technological solutions improving their durability. For this purpose, accelerated aging tests were carried out on the glass, the crystalline silicon PV cell and the PV mini-module composed of glass, a polymeric encapsulant and the silicon cell.Their functional properties are systematically evaluated and the follow-up of these indicators allows to define aging laws. In parallel, physicochemical characterizations are carried out to determine the degradation mechanisms of the different components of the module. The study of damp heat on glass throws into evidence a surface degradation with a hydration process of the silica network and a leaching phenomenon of the sodium which involves an increase of the glass transmittance. The PV cell exhibits a deterioration of the electrical performance and reflectance after UV radiation exposure due to a photo-oxidation process of the SiNx antireflection layer. It has also been established that high UV power can also promote a regeneration phenomenon of electrical performances. The aging of the mini-module under UV shows the phenomenon of photo-induced degradation (LID) generating a slight decrease in the electrical performance from the first exposure whereas the impact of damp heat on the electrical performance is null after 2000 hours
Libros sobre el tema "Semiconductor module"
International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.
Buscar texto completoCorporation, Mitsubishi Electric. Mitsubishi semiconductors: Memories module : data book. Tokyo: Mitsubishi Electric Corporation, 1992.
Buscar texto completoCorporation, Mitsubishi Electric. Mitsubishi semiconductors 1994: Memories module (data book). Tokyo: Mitsubishi Electric Corporation, 1994.
Buscar texto completoInternational, Semikron, ed. Application manual power modules. Ilmenau: ISLE, 2000.
Buscar texto completoP, Colino Ronald, ed. Power electronic modules: Design and manufacture. Boca Raton: CRC Press, 2005.
Buscar texto completoBaranowski, Jerzy Hubert. Sekcyjne modele ładunkowe diod i tranzystorów bipolarnych. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1985.
Buscar texto completoSnowden, Christopher M. Semiconductor device modelling. London, U.K: P. Peregrinus on behalf of the Institution of Electrical Engineers, 1988.
Buscar texto completoChristopher, Snowden, ed. Semiconductor device modelling. London: Springer-Verlag, 1989.
Buscar texto completoMarvin, Coughran William, ed. Semiconductors. New York: Springer-Verlag, 1994.
Buscar texto completoThe stationary semiconductor device equations. Wien: Springer-Verlag, 1986.
Buscar texto completoCapítulos de libros sobre el tema "Semiconductor module"
Großmann, E., U. Hilbk y K. Peters. "Thermal Tunable Minimized Semiconductor Laser-Module". En Micro System Technologies 90, 465–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_66.
Texto completoYagi, Atsushi. "Semiconductor Models". En Springer Monographs in Mathematics, 345–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04631-5_8.
Texto completoStrauch, Dieter. "MgO: Bulk and Shear Moduli". En Semiconductors, 45–55. Berlin, Heidelberg: Springer Berlin Heidelberg, 2017. http://dx.doi.org/10.1007/978-3-662-53620-9_11.
Texto completoFu, Ying. "Semiconductor Materials". En Physical Models of Semiconductor Quantum Devices, 1–66. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7174-1_1.
Texto completoChen, Li y Michael Dreher. "Quantum Semiconductor Models". En Partial Differential Equations and Spectral Theory, 1–72. Basel: Springer Basel, 2011. http://dx.doi.org/10.1007/978-3-0348-0024-2_1.
Texto completoMarkowich, Peter A., Christian A. Ringhofer y Christian Schmeiser. "Kinetic Transport Models for Semiconductors". En Semiconductor Equations, 3–82. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_2.
Texto completoSever, Michael. "Symmetric Forms of Energy — Momentum Transport Models". En Semiconductors, 365–76. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4613-8410-6_21.
Texto completoMarkowich, Peter A., Christian A. Ringhofer y Christian Schmeiser. "From Kinetic to Fluid Dynamical Models". En Semiconductor Equations, 83–103. Vienna: Springer Vienna, 1990. http://dx.doi.org/10.1007/978-3-7091-6961-2_3.
Texto completoSu, P. y B. A. Unger. "Temperature Cycling Tests o Laser Modules". En Semiconductor Device Reliability, 363–78. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_21.
Texto completoSchenk, Andreas. "Metal-Semiconductor Contact". En Advanced Physical Models for Silicon Device Simulation, 252–80. Vienna: Springer Vienna, 1998. http://dx.doi.org/10.1007/978-3-7091-6494-5_4.
Texto completoActas de conferencias sobre el tema "Semiconductor module"
O'Neill, James A. "Infrared diagnostics for semiconductor process monitoring". En Process Module Metrology, Control and Clustering, editado por Cecil J. Davis, Irving P. Herman y Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56649.
Texto completoGottscho, Richard A., Matthew Vernon, Jeffrey A. Gregus, E. Yoon, K. P. Giapis, Todd R. Hayes, William S. Hobson et al. "Light scattering methods for semiconductor process monitoring and control". En Process Module Metrology, Control and Clustering, editado por Cecil J. Davis, Irving P. Herman y Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56644.
Texto completoPoulin, M., S. Ayotte, C. Latrasse, Y. Painchaud, J. F. Cliche, A. Babin, M. Aubé et al. "Compact narrow linewidth semiconductor laser module". En SPIE Defense, Security, and Sensing, editado por Mark Dubinskii y Stephen G. Post. SPIE, 2009. http://dx.doi.org/10.1117/12.818802.
Texto completovan Os, C. F. A. y Brian N. Chapman. "In-situ monitoring of semiconductor wafer temperature using infrared interferometry". En Process Module Metrology, Control and Clustering, editado por Cecil J. Davis, Irving P. Herman y Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56657.
Texto completoViloria, Gregory y Richard N. Savage. "Application of optical emission diagnostics and control related to semiconductor processing". En Process Module Metrology, Control and Clustering, editado por Cecil J. Davis, Irving P. Herman y Terry R. Turner. SPIE, 1992. http://dx.doi.org/10.1117/12.56652.
Texto completoFan, Yingmin, Dandan Zhou, Hongtao Chong, Bin Zhao, Peng Wang, Ke Yuan, Chung-en Zah y Xingsheng Liu. "VCSEL line-beam module for LiDAR applications". En Semiconductor Lasers and Applications XI, editado por Yikai Su, Werner H. Hofmann y Wei Li. SPIE, 2021. http://dx.doi.org/10.1117/12.2601496.
Texto completoEzzahri, Y., R. Singh, K. Fukutani, Z. Bian, A. Shakouri, G. Zeng, J. E. Bowers, J. M. Zide y A. C. Gossard. "Transient Thermal Characterization of ErAs/In0.53Ga0.47As Thermoelectric Module". En ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33880.
Texto completoAng, Simon S. y Hao Zhang. "High temperature power electronic module packaging". En 2015 China Semiconductor Technology International Conference (CSTIC). IEEE, 2015. http://dx.doi.org/10.1109/cstic.2015.7153443.
Texto completoSpiessberger, S., M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, G. Erbert y G. Trankle. "Narrow-linewidth high-power semiconductor-based laser module". En 12th European Quantum Electronics Conference CLEO EUROPE/EQEC. IEEE, 2011. http://dx.doi.org/10.1109/cleoe.2011.5942619.
Texto completoStockmeier, Manz y Steger. "Novel high power semiconductor module for trench IGBTs". En IC's. IEEE, 2004. http://dx.doi.org/10.1109/wct.2004.240148.
Texto completoInformes sobre el tema "Semiconductor module"
Sfyrla, Anna. Search for WW and WZ production in lepton, neutrino plus jets final states at CDF Run II and Silicon module production and detector control system for the ATLAS SemiConductor Tracker. Office of Scientific and Technical Information (OSTI), marzo de 2008. http://dx.doi.org/10.2172/935479.
Texto completoGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1995. http://dx.doi.org/10.21236/ada291809.
Texto completoGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1995. http://dx.doi.org/10.21236/ada301555.
Texto completoWright, Alan F., Normand A. Modine, Stephen R. Lee y Stephen M. Foiles. Compact Models for Defect Diffusivity in Semiconductor Alloys. Office of Scientific and Technical Information (OSTI), septiembre de 2017. http://dx.doi.org/10.2172/1395644.
Texto completoWang, H., H. Q. Hou y B. E. Hammons. Anomalous normal mode oscillations in semiconductor microcavities. Office of Scientific and Technical Information (OSTI), abril de 1997. http://dx.doi.org/10.2172/468579.
Texto completoPinczuk, Aron y Shalom J. Wind. Artificially Structured Semiconductors to Model Novel Quantum Phenomena. Office of Scientific and Technical Information (OSTI), enero de 2018. http://dx.doi.org/10.2172/1416872.
Texto completoGardner, Carl L. The Quantum Hydrodynamic Model for Semiconductor Devices: Theory and Computations. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1998. http://dx.doi.org/10.21236/ada358049.
Texto completoBelenky, Gregory y Sergey Suchalkin. Electrically Tunable Mid-Infrared Single-Mode High-Speed Semiconductor Laser. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 2010. http://dx.doi.org/10.21236/ada544757.
Texto completoWu, Z. C., Daniel A. Jelski, Thomas F. George, L. Nanai y I. Hevesi. Model of Laser-Induced Deposition on Semiconductors from Liquid Electrolytes. Fort Belvoir, VA: Defense Technical Information Center, abril de 1989. http://dx.doi.org/10.21236/ada207097.
Texto completoRuden, P. P. y Darryl L. Smith. Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel. Office of Scientific and Technical Information (OSTI), abril de 2007. http://dx.doi.org/10.2172/1304691.
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