Bibliografías temáticas / Semiconducting material

Literatura académica sobre el tema "Semiconducting material"

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Publicado: 6 de septiembre de 2023

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Artículos de revistas sobre el tema "Semiconducting material"

1

Groń, T., M. Bosacka, E. Filipek, A. Pacześna, P. Urbanowicz, B. Sawicki y H. Duda. "Semiconducting properties of Cu2In3VO9 ceramic material". Ceramics International 43, n.º 2 (febrero de 2017): 2456–59. http://dx.doi.org/10.1016/j.ceramint.2016.11.040.

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Daya Shanker y Rashimi Yadav. "The impact of magnetic field on the surface of carbon-insulator-GaAs Semiconductors which is tunable with a frequency range in the presence of surface magneto Plasmon". International Journal of Science and Research Archive 7, n.º 2 (30 de diciembre de 2022): 306–11. http://dx.doi.org/10.30574/ijsra.2022.7.2.0279.

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In this paper, group velocity and frequency wave can be tuned with an applied external magnetic field when we increase the magnetic field from 0-4 tesla the frequency range can be reduced for given semiconductor materials. The excitation of the two layers of semiconducting material propagating band structures can be explained by the oscillations of electrons in semiconductors on applying the magnetic field, we study the effects of an external magnetic field in the band structure of C-insulator-GaAs materials in presence of surface magneto plasmons concerning plasma frequency below and above the surface band structures. The surface magneto plasmon bands get excited and show the dispersion relation with frequency range. The higher dispersion band moves in faster than the lower dispersion band structure of semiconducting material. The most energy is stored in a lower surface of magneto plasmon. When we increase the magnetic field, the surface of the semiconductor moves opposite to the lower surface of the semiconductor material. Here, we use semiconducting materials instead of metals because metal cannot support a wide frequency range on the magneto-plasmonic surface providing a good tunning property and more flexibility in this mechanism, which is widely useful in telecommunications, magneto-plasmonic devices, and data processing unit. This study is widely more promising due to its wavelength confinements of electromagnetic fields on semiconducting and insulating layers. Due to nonreciprocal effects, the dispersion of frequency waves varies with different band structures and group velocity also varies with two propagating directions among semiconductor-insulator-semiconductor layers.
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Hadziioannou, Georges. "Semiconducting Block Copolymers for Self-Assembled Photovoltaic Devices". MRS Bulletin 27, n.º 6 (junio de 2002): 456–60. http://dx.doi.org/10.1557/mrs2002.145.

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AbstractThis article focuses on self-assembled photovoltaic materials based on a new class of semiconducting block copolymers for application in photovoltaic devices. Topics discussed include the materials concept for efficient photovoltaic-device structures, their macromolecular design and synthesis, and their performance in relation to their molecular, mesoscopic, and interfacial structures. An ideal organic material for this application would have to compete with amorphous silicon in regard to energy-conversion efficiency and fabrication costs. The potential of the semiconducting block copolymers presented in this review lies in the promise of large-area, mechanically flexible, self-structured photovoltaic devices fabricated by inexpensive processing techniques.
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McMichael, Stuart, Pilar Fernández-Ibáñez y John Anthony Byrne. "A Review of Photoelectrocatalytic Reactors for Water and Wastewater Treatment". Water 13, n.º 9 (26 de abril de 2021): 1198. http://dx.doi.org/10.3390/w13091198.

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The photoexcitation of suitable semiconducting materials in aqueous environments can lead to the production of reactive oxygen species (ROS). ROS can inactivate microorganisms and degrade a range of chemical compounds. In the case of heterogeneous photocatalysis, semiconducting materials may suffer from fast recombination of electron–hole pairs and require post-treatment to separate the photocatalyst when a suspension system is used. To reduce recombination and improve the rate of degradation, an externally applied electrical bias can be used where the semiconducting material is immobilised onto an electrically conducive support and connected to a counter electrode. These electrochemically assisted photocatalytic systems have been termed “photoelectrocatalytic” (PEC). This review will explain the fundamental mechanism of PECs, photoelectrodes, the different types of PEC reactors reported in the literature, the (photo)electrodes used, the contaminants degraded, the key findings and prospects in the research area.
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Han, Fanjunjie, Tong Yu, Xin Qu, Aitor Bergara y Guochun Yang. "Semiconducting MnB5 monolayer as a potential photovoltaic material". Journal of Physics: Condensed Matter 33, n.º 17 (21 de abril de 2021): 175702. http://dx.doi.org/10.1088/1361-648x/abe269.

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Elim, Hendry I., Wei Ji, Meng-Tack Ng y Jagadese J. Vittal. "AgInSe2 nanorods: A semiconducting material for saturable absorber". Applied Physics Letters 90, n.º 3 (15 de enero de 2007): 033106. http://dx.doi.org/10.1063/1.2429030.

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Hanack, Michael, Armin Lange y Ronald Grosshans. "Tetrazine-bridged phthalocyaninato-metal complexes as semiconducting material". Synthetic Metals 45, n.º 1 (octubre de 1991): 59–70. http://dx.doi.org/10.1016/0379-6779(91)91847-4.

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Solozhenko, Vladimir L., Natalia A. Dubrovinskaia y Leonid S. Dubrovinsky. "Synthesis of bulk superhard semiconducting B–C material". Applied Physics Letters 85, n.º 9 (30 de agosto de 2004): 1508–10. http://dx.doi.org/10.1063/1.1786363.

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Klugmann, Eugeniusz y Michal Polowczyk. "Semiconducting diamond as material for high temperature thermistors". Materials Research Innovations 4, n.º 1 (noviembre de 2000): 45–48. http://dx.doi.org/10.1007/s100190000067.

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Jin, Changhyun, Hyunsu Kim, Wan In Lee y Chongmu Lee. "Ultraintense Luminescence in Semiconducting-Material-Sheathed MgO Nanorods". Advanced Materials 23, n.º 17 (28 de marzo de 2011): 1982–87. http://dx.doi.org/10.1002/adma.201004266.

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Tesis sobre el tema "Semiconducting material"

1

Ahmad, Nisar. "High-field transport in semiconducting material and devices". Thesis, Brunel University, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258019.

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Kozawa, Daichi. "Behavior of photocarrier in atomically thin two-dimensional semiconducting materials for optoelectronics". Kyoto University, 2015. http://hdl.handle.net/2433/199420.

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Longhin, Mattia. "Semiconducting bolometric detectors : material optimization and device design for future room temperature THz imaging arrays". Paris 6, 2009. http://www.theses.fr/2009PA066076.

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L’application à grande échelle des technologies liées au rayonnement terahertz (THz) est encore aujourd’hui limitée par leur complexité et les coûts élevés. Dans ce mémoire, nous proposons des détecteurs bolométriques économiques fonctionnant à température ambiante pour application à l’imagerie THz. Dans ce contexte, nous avons tout d’abord étudié le dépôt de films minces de la phase semiconductrice de l’oxyde YBaCuO et optimisé les caractéristiques structurales et électriques des films minces pour les rendre compatibles avec une technologie CMOS. Nous avons ensuite initié et mis en œuvre de nouveaux procédés de technologie pour fabriquer des bolomètres à partir des films minces semiconducteurs. En particulier, nous nous sommes occupés du couplage entre l’antenne THz et l’élément sensible. Finalement, de premiers dispositifs correspondant à différentes configurations possibles du détecteur ont été réalisés et testés.
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4

CALASCIBETTA, ADIEL MAURO. "SUSTAINABLE SYNTHETIC METHODOLOGIES FOR THE PREPARATION OF ORGANIC SEMICONDUCTING MATERIALS: ORGANIC (OPTO)ELECTRONICS GROWING “GREEN”". Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/312085.

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The worldwide demand for energy-efficient and high-performing (opto)electronics, along with the increasing need for economically feasible and environmentally friendly chemistry, both require semiconducting materials that are both scalable and sustainable. The concern with waste generation and toxic/hazardous chemicals usage has already moulded many operations in chemical and manufacturing industries. To date, common syntheses to access organic semiconductors require the use of large quantities of toxic and/or flammable organic solvents, often involving reagents and by-products that are harmful to health and environment. Research in the field of organic electronics is now increasingly focusing on the development of new sustainable methodologies that allow to prepare active materials in a more efficiently way, caring further on safety and sustainability associated with production processes. The immediate approach applicable consist on the removal, or at least on the minimization, of harmful and toxic substances commonly employed within standard processes. The big elephant in the room in the synthesis of active materials is the amount of organic solvent employed, which could ideally be reduced by using aqueous solution of surfactants: in these nano/micro heterogeneous environments organic transformations can happen and often with unprecedent efficiency. Clearly, the process occur not through the dissolution of the reagents (starting materials and catalyst) but from their dispersion in water. Kwon as “micellar catalysis”, this strategy has proven to be highly effective on improving sustainability becoming a prominent topic in modern organic synthesis. In particular, the micellar catalysis strategy is compatible with the most common modern strategies employed for C-C and C-heteroatom bonds forming reactions and allow to perform reactions with high yields, in water and under very mild conditions. Nonetheless, the use of such method in the field of organic semiconductors is still limited, with only few relevant examples reported in literature concerning the preparation of π-conjugated molecular and polymeric materials. This Thesis describes the importance of introducing sustainability in the synthesis of organic semiconductors, satisfying several principles of the green chemistry guidance. Our research purpose is not to provide an exhaustive list of examples of such chemistry, but rather to identify a few key developments in the field that seem especially suited to large-scale synthesis. Then, the discussion will consider the synthetic approaches typically employed to access semiconducting materials with extended π-conjugated structures. In particular, the discussion will involve the well-known Pd-catalysed cross-coupling techniques. Finally, the topic of the work will focus on micro-heterogeneous environments as a new tool for introducing sustainability in the preparation of active materials in water, satisfying several criteria relevant to green chemistry. On my opinion, the micellar catalysis approach constitute today the more promising method to lower the overall cost and environmental impact in the production of organic semiconductors without affecting yields, purity, and device performance.
The worldwide demand for energy-efficient and high-performing (opto)electronics, along with the increasing need for economically feasible and environmentally friendly chemistry, both require semiconducting materials that are both scalable and sustainable. The concern with waste generation and toxic/hazardous chemicals usage has already moulded many operations in chemical and manufacturing industries. To date, common syntheses to access organic semiconductors require the use of large quantities of toxic and/or flammable organic solvents, often involving reagents and by-products that are harmful to health and environment. Research in the field of organic electronics is now increasingly focusing on the development of new sustainable methodologies that allow to prepare active materials in a more efficiently way, caring further on safety and sustainability associated with production processes. The immediate approach applicable consist on the removal, or at least on the minimization, of harmful and toxic substances commonly employed within standard processes. The big elephant in the room in the synthesis of active materials is the amount of organic solvent employed, which could ideally be reduced by using aqueous solution of surfactants: in these nano/micro heterogeneous environments organic transformations can happen and often with unprecedent efficiency. Clearly, the process occur not through the dissolution of the reagents (starting materials and catalyst) but from their dispersion in water. Kwon as “micellar catalysis”, this strategy has proven to be highly effective on improving sustainability becoming a prominent topic in modern organic synthesis. In particular, the micellar catalysis strategy is compatible with the most common modern strategies employed for C-C and C-heteroatom bonds forming reactions and allow to perform reactions with high yields, in water and under very mild conditions. Nonetheless, the use of such method in the field of organic semiconductors is still limited, with only few relevant examples reported in literature concerning the preparation of π-conjugated molecular and polymeric materials. This Thesis describes the importance of introducing sustainability in the synthesis of organic semiconductors, satisfying several principles of the green chemistry guidance. Our research purpose is not to provide an exhaustive list of examples of such chemistry, but rather to identify a few key developments in the field that seem especially suited to large-scale synthesis. Then, the discussion will consider the synthetic approaches typically employed to access semiconducting materials with extended π-conjugated structures. In particular, the discussion will involve the well-known Pd-catalysed cross-coupling techniques. Finally, the topic of the work will focus on micro-heterogeneous environments as a new tool for introducing sustainability in the preparation of active materials in water, satisfying several criteria relevant to green chemistry. On my opinion, the micellar catalysis approach constitute today the more promising method to lower the overall cost and environmental impact in the production of organic semiconductors without affecting yields, purity, and device performance.
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5

Fix, Aaron. "Synthesis and Properties of Indenofluorene and Diindenothiophene Derivatives for Use as Semiconducting Materials in Organic Electronic Devices". Thesis, University of Oregon, 2013. http://hdl.handle.net/1794/13444.

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Organic electronic devices are becoming commonplace in many academic and industrial materials laboratories, and commercial application of these technologies is underway. To maximize our fundamental understanding of organic electronics, a wide array of molecular frameworks is necessary, as it allows for a variety of optical and electronic properties to be systematically investigated. With the ability to further tune each individual scaffold via derivatization, access to a broad spectrum of interesting materials is possible. Of particular interest in the search for organic semiconducting materials are the cyclopenta-fused polyaromatic hydrocarbons, including those based on the fully conjugated indenofluorene (IF) system, which is comprised of five structural isomers. This dissertation represents my recent contributions to this area of research. Chapter I serves as a historical perspective on early indenofluorene research and a review of more current research on their synthesis and applications in organic electronic devices. Chapters II and III cover our early work developing the synthesis of the fully-reduced indeno[1,2-b]fluorene scaffold, with the latter of these chapters showing the first example of its application in an organic electronic device, a field effect transistor. Chapter IV demonstrates the first syntheses of fully-reduced indeno[2,1-c]fluorene derivatives. Chapter V expands our research to encompass isoelectronic heteroatomic derivatives of that same scaffold, introducing the fully-reduced diindeno[2,1-b:1',2'-d]thiophene scaffold and showing that our synthetic methodology also can be used to produce a quinoidal thiophene core. Chapter VI concludes with a review of the similarities between the indeno[2,1-c]fluorene and diindeno[2,1-b:1',2'-d]thiophene molecular architectures and introduces benzo[a]indeno[2,1-b]fluorene derivatives, demonstrating the first example of a fully-reduced indenofluorene that possesses a non-quinoidal core, illustrating that the quinoidal core is not a prerequisite for the strong electron affinities seen across the families of fully-reduced indenofluorenes. This dissertation encompasses previously published and unpublished co-authored material.
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Burwood, Ryan Paul. "Towards semiconducting hybrid framework materials". Thesis, University of Cambridge, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648156.

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Zhang, Yu. "Fabrication, structural and spectroscopic studies of wide bandgap semiconducting nanoparticles of ZnO for application as white light emitting diodes". Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI046.

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La présente thèse étudie les nanoparticules de ZnO incorporées dans une matrice d'acide polyacrylique (PAA) mésosphérique synthétisée via un protocole d'hydrolyse. La structure hybride mésosphérique de ZnO / PAA a précédemment démontré son efficacité pour émettre de la lumière visible dans une large gamme, qui résulte des défauts intrinsèques de niveaux profonds dans les nanocristaux de ZnO. Pour modifier davantage le spectre de photoluminescence (PL) et améliorer le rendement quantique de PL (PL QY) du matériau, le ZnO dopé au métal et le ZnO / PAA revêtu de silice sont fabriqués indépendamment. Au niveau du ZnO dopé avec des éléments métalliques, la nature, la concentration, la taille et la valence du dopant affectent la formation des mésosphères et par conséquent la PL et le PL QY. Les ions plus grands que Zn2+ avec une valence plus élevée ont tendance à induire des mésosphères plus grandes et des nanoparticules de ZnO non incorporées. Le dopage conduit généralement à l'extinction de la PL, mais le spectre PL peut toujours être ajusté dans une large plage (entre 2,46 eV et 2,17 eV) sans dégrader le PL QY en dopant avec de petits ions à une faible concentration de dopage (0,1 %). Concernant le ZnO / PAA revêtu de silice, un revêtement optimal est obtenu, qui dépend corrélativement de la quantité de TEOS et d'ammoniac dans le processus de revêtement. La quantité de TEOS n'affecte pas la structure cristalline de ZnO ou le spectre PL du matériau, mais une concentration élevée d'ammoniac peut dégrader les mésosphères de PAA et épaissir la couche de silice. Une fine couche de silice qui n'absorbe pas trop de lumière d'excitation mais recouvre complètement les mésosphères s'avère être la plus efficace, avec une amélioration drastique du PL QY d’un facteur six. En ce qui concerne l'application, les matériaux souffrent d’une dégradation thermique à des températures élevées jusqu'à 100 °C, auxquelles les diodes électroluminescentes blanches (WLEDs) fonctionnent généralement. Cependant, le ZnO / PAA revêtu de silice induit une intensité d'émission plus élevée à température ambiante pour compenser la dégradation thermique
The present thesis studies ZnO nanoparticles embedded in a mesospheric polyacrylic acid (PAA) matrix synthesized via a hydrolysis protocol. The mesospheric ZnO/PAA hybrid structure was previously proved efficient in emitting visible light in a broad range, which results from the deep-level intrinsic defects in ZnO nanocrystals. To further tune the photoluminescence (PL) spectrum and improve the PL quantum yield (PL QY) of the material, metal-doped ZnO and silica-coated ZnO/PAA are fabricated independently. For ZnO doped with metallic elements, the nature, concentration, size and valence of the dopant are found to affect the formation of the mesospheres and consequently the PL and PL QY. Ions larger than Zn2+ with a higher valence tend to induce larger mesospheres and unembedded ZnO nanoparticles. Doping generally leads to the quenching of PL, but the PL spectrum can still be tuned in a wide range (between 2.46 eV and 2.17 eV) without degrading the PL QY by doping small ions at a low doping concentration (0.1 %). For silica-coated ZnO/PAA, an optimal coating correlatively depends on the amount of TEOS and ammonia in the coating process. The amount of TEOS does not affect the crystal structure of ZnO or the PL spectrum of the material, but high concentration of ammonia can degrade the PAA mesospheres and thicken the silica shell. A thin layer of silica that does not absorb too much excitation light but completely covers the mesospheres proves to be the most efficient, with a drastic PL QY improvement of six times. Regarding the application, the materials suffer from thermal quenching at temperatures high up to 100°C, at which white light emitting diodes (WLEDs) generally operates. However, silica-coated ZnO/PAA induces higher emission intensity at room temperature to make up for the thermal quenching
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Yang, Changduk. "Conjugated semiconducting organic materials for electronic applications". [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=98159641X.

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Krishnamurthy, Rajesh. "Passivation of GaAs and GaInAsP semiconducting materials". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0005/NQ31174.pdf.

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Yang, Hui. "Modelling charge transport in organic semiconducting materials". Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10062018/.

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Forming the active layers of organic light-emitting diodes (OLEDs), organic photovoltaics (OPVs) and organic field-effect transistors (OFETs), Organic semiconductors (OSs) have revolutionized the microelectronics industry. Compared with commonly used inorganic semiconductors, OSs combine many desirable properties: light-weight, flexible and relatively easy to produce from renewable resources. However, a drawback of OSs compared to inorganic semiconductors is their limited conductivity of electrical charges. In this thesis, I study charge transport properties of OSs in order to aid their material and structure design and to improve device efficiency. In this work, I evaluate the performance of a systematic and sophisticated computational tool for the prediction of charge mobilities in OSs. The method is based on the assumption that the charge carrier is localized, i.e. forms a small polaron that hops from one molecule to the next. Molecular dynamics simulation and first- principle calculations are used to calculate rate constants for each polaron hopping step and kinetic Monte Carlo simulations are carried out to compute the mobility from the set of hopping rate constants. The methodology is applied to hole hopping in single crystalline benzene, rubrene, pentacene, anthracene and electron hopping in C60. To find structure - property relations linking the morphology with the bulk charge carrier mobility, the methodology is further applied in few-layer thinfilm pentacene and amorphous pentacene.
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Libros sobre el tema "Semiconducting material"

1

Ahmad, Nisar. High-field transport in semiconducting material and devices. Uxbridge: Brunel University, 1990.

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Cullis, A. G. y J. L. Hutchison, eds. Microscopy of Semiconducting Materials. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-31915-8.

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Asomoza, René y S. Velumani. Advances in semiconducting materials. Stafa-Zurich, Switzerland: Trans Tech Publications, 2009.

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Borisenko, V. E. Semiconducting Silicides. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000.

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Butcher, Paul N., Norman H. March y Mario P. Tosi, eds. Crystalline Semiconducting Materials and Devices. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-9900-2.

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Cullis, A. G. y P. A. Midgley, eds. Microscopy of Semiconducting Materials 2007. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-8615-1.

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Gupta, K. M. y Nishu Gupta. Advanced Semiconducting Materials and Devices. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-19758-6.

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N, Butcher Paul, March Norman H. 1927- y Tosi M. P, eds. Crystalline semiconducting materials and devices. New York: Plenum Press, 1986.

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P, Agarwala R., ed. Special defects in semiconducting materials. Switzerland: Scitec Publications, 2000.

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1934-, Hartnagel Hans, ed. Semiconducting transparent thin films. Bristol [England]: Institute of Physics Pub., 1995.

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Capítulos de libros sobre el tema "Semiconducting material"

1

Borisenko, Victor E. y Andrew B. Filonov. "General Material Aspects". En Semiconducting Silicides, 1–79. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-642-59649-0_1.

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Hernández-Ramírez, Aracely y Iliana Medina-Ramírez. "Semiconducting Materials". En Photocatalytic Semiconductors, 1–40. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-10999-2_1.

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Fahlman, Bradley D. "Semiconducting Materials". En Materials Chemistry, 153–219. Dordrecht: Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-6120-2_4.

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Haas, C. "Special Semiconducting Materials". En Crystalline Semiconducting Materials and Devices, 355–95. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-9900-2_9.

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Hasegawa, Shuji y Masahiko Tomitori. "Characterization of Semiconducting Materials". En Roadmap of Scanning Probe Microscopy, 133–37. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-34315-8_18.

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Hoa Hong, Nguyen. "Diluted magnetic Semiconducting oxides". En Functional Materials and Electronics, 263–87. Oakville, ON ; Waretown, NJ : Apple Academic Press, [2017]: Apple Academic Press, 2018. http://dx.doi.org/10.1201/9781315167367-6.

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Radhakrishna, S. "Raman Spectroscopy of Semiconducting Materials". En Main Group Elements and their Compounds, 146–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-52478-3_13.

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Khedkar, Jayshree, Anil M. Palve y Ram K. Gupta. "Semiconducting Nanostructured Materials for Bioelectronics". En Bioelectronics, 187–201. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003263265-12.

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Balberg, Isaac. "Percolation Theory and Its Application in Electrically Conducting Materials". En Semiconducting Polymer Composites, 145–69. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527648689.ch5.

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Tong, Colin. "Semiconducting Materials for Printed Flexible Electronics". En Advanced Materials for Printed Flexible Electronics, 159–220. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-79804-8_4.

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Actas de conferencias sobre el tema "Semiconducting material"

1

Ullrich, B., I. Kulac, H. Pint, G. Leising y H. Kahlert. "Semiconducting YBa2Cu3O6 Films: A New Material". En 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.s-iii-2.

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Ozvold, Milan, V. Gasparik y Peter Mrafko. "Optical properties of semiconducting iron disilicide thin films". En Material Science and Material Properties for Infrared Optoelectronics, editado por Fiodor F. Sizov. SPIE, 1999. http://dx.doi.org/10.1117/12.368351.

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Teghil, R., A. Giardini Guidoni, A. Mele, G. Pizella, A. Santagata y S. Orlando. "Epitaxial growth of thin films of SnSe semiconducting material". En The 54th international meeting of physical chemistry: Fast elementary processes in chemical and biological systems. AIP, 1996. http://dx.doi.org/10.1063/1.50171.

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Ferris, Kim F., Bobbie-Jo M. Webb-Robertson y Dumont M. Jones. "Semiconducting material property relationships: trends and their impact on design of radiation detection materials". En SPIE Optical Engineering + Applications, editado por Ralph B. James, Larry A. Franks y Arnold Burger. SPIE, 2009. http://dx.doi.org/10.1117/12.830145.

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Ahmad, Kaleem. "Electrospun semiconducting nanofibers as an attractive material for renewable energy applications". En 2012 International Conference on Renewable Energies for Developing Countries (REDEC). IEEE, 2012. http://dx.doi.org/10.1109/redec.2012.6416696.

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Pawar, Harsha, Nikita Acharya, Mani Shugani, Mahendra Aynyas y Sankar P. Sanyal. "Thermoelectric response of anti-fluoride Sr2Ge semiconducting material: A first-principles study". En DAE SOLID STATE PHYSICS SYMPOSIUM 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0017534.

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Ballet, J., R. Leguerre, D. Delabouglise, F. Olivie, G. Sarrabayrouse y A. Martinez. "Organic electronic devices using regioregular poly(3-octylthiophene) as a semiconducting material". En 2004 IEEE International Symposium on Industrial Electronics. IEEE, 2004. http://dx.doi.org/10.1109/isie.2004.1572018.

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Sharda, Sunanda, Neha Sharma, Pankaj Sharma y Vineet Sharma. "SbSeGe semiconducting alloys: Non-linear refractive index and susceptibility". En PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810226.

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Masroor Shalmani, Maryam, T. Yan, James McRae, Emily P. Mostland, Risbel Rivas, Emma R. Ruano, Arthur McClelland y Pratap M. Rao. "Controlling crystal growth of non-toxic Bismuth iodide (BiI3) semiconducting material for efficient photovoltaics". En Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, editado por Alexandre Freundlich, Masakazu Sugiyama y Stéphane Collin. SPIE, 2020. http://dx.doi.org/10.1117/12.2544043.

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Chandrasekar, J. y Durgachalam Manikandan. "Chemically deposited semiconducting metal chalcogenide ins thin film and its application as photovoltaic material". En PROCEEDING OF INTERNATIONAL CONFERENCE ON ENERGY, MANUFACTURE, ADVANCED MATERIAL AND MECHATRONICS 2021. AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0126537.

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Informes sobre el tema "Semiconducting material"

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Matnishyan, Hakob A. Synthesis of New Organic Semiconducting Polymer Materials Having High Radiowave Absorption Rate. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 2008. http://dx.doi.org/10.21236/ada494519.

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Feng, Pingyun. X-Ray Powder Diffractometer as a Structural Toll for the Development of Semiconducting Inorganic-Organic Composite Chalcogenides as Efficient Thermoelectric Materials. Fort Belvoir, VA: Defense Technical Information Center, abril de 2003. http://dx.doi.org/10.21236/ada416279.

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