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Literatura académica sobre el tema "Reconstruction 3D pilotée par model"
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Artículos de revistas sobre el tema "Reconstruction 3D pilotée par model"
Zhang, Congyi, Mohamed Elgharib, Gereon Fox, Min Gu, Christian Theobalt y Wenping Wang. "An Implicit Parametric Morphable Dental Model". ACM Transactions on Graphics 41, n.º 6 (30 de noviembre de 2022): 1–13. http://dx.doi.org/10.1145/3550454.3555469.
Texto completoKovalenko, Onorina, Vladislav Golyanik, Jameel Malik, Ahmed Elhayek y Stricker. "Structure from Articulated Motion: Accurate and Stable Monocular 3D Reconstruction without Training Data". Sensors 19, n.º 20 (22 de octubre de 2019): 4603. http://dx.doi.org/10.3390/s19204603.
Texto completoLemm, Dominik, Guido Falk von Rudorff y O. Anatole von Lilienfeld. "Machine learning based energy-free structure predictions of molecules, transition states, and solids". Nature Communications 12, n.º 1 (22 de julio de 2021). http://dx.doi.org/10.1038/s41467-021-24525-7.
Texto completoPerdreau, E., Z. Jalal, R. Walton, M. Sigler, H. Cochet, J. Naulin, B. Quesson, O. Bernus y JB Thambo. "Non-invasive assessment of cardiac percutaneous occluders healing process using computed tomography imaging: a proof of concept study". European Heart Journal - Cardiovascular Imaging 22, Supplement_1 (1 de enero de 2021). http://dx.doi.org/10.1093/ehjci/jeaa356.246.
Texto completoTesis sobre el tema "Reconstruction 3D pilotée par model"
Valade, Charles. "Développement d'une méthodologie adaptée à l'industrie microélectronique pour la reconstruction topographique par imagerie SEM à faisceau inclinable". Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT015.
Texto completoWith the advancement of microelectronics technologies, the architecture of electronic components is becoming increasingly complicated. However, knowledge of the dimensional characteristics of the structures is important in order to be able to understand and optimize the behavior of these components. This is why there is a need to develop rapid, non-destructive three-dimensional measurement methods.The scanning electron microscope (SEM) is widely used to carry out dimensional measurements because it responds to the problems of speed and non-destructivity. However, obtaining quantitative and precise three-dimensional information is a challenge.Thanks to an electron microscope whose electron beam can be tilted, it is possible to obtain images at different viewing angles. From the analysis of these images, the height and the sidewall angles of the observed pattern can be determined geometrically.However, since electronic imaging is the result of electron-matter interactions, it is important to understand the origin of the formation of SEM images, in order to be able to analyze them correctly. This is why a study was carried out using physical simulation software to observe and understand the impact of the topography of a pattern on the resulting SEM image.From these observations, metrics were created on the SEM images to analyze them quantitatively.A linear model was then created using physical simulations to estimate the topographic quantities from these metrics. It was then calibrated on real SEM measurements, by comparing them to three-dimensional reference measurements by atomic force microscopy (AFM). This model was created for the reconstruction of “line” type patterns in etched silicon. Thanks to this model, reconstructions of real patterns were made. Finally, work was started on the creation of a model for "trench" and "dense" type patterns in etched silicon