Bibliografías temáticas / Quantum devices

Literatura académica sobre el tema "Quantum devices"

Autor: Grafiati
Publicado: 4 de junio de 2021
Última modificación: 11 de marzo de 2023

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Artículos de revistas sobre el tema "Quantum devices"

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Datta, S. "Quantum devices". Superlattices and Microstructures 6, n.º 1 (enero de 1989): 83–93. http://dx.doi.org/10.1016/0749-6036(89)90100-6.

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Kouwenhoven, L. "Quantum Devices". Science 279, n.º 5357 (13 de marzo de 1998): 1649–50. http://dx.doi.org/10.1126/science.279.5357.1649.

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Kosina, Hans y Siegfried Selberherr. "Device Simulation Demands of Upcoming Microelectronics Devices". International Journal of High Speed Electronics and Systems 16, n.º 01 (marzo de 2006): 115–36. http://dx.doi.org/10.1142/s0129156406003576.

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An overview of models for the simulation of current transport in micro- and nanoelectronic devices within the framework of TCAD applications is presented. Starting from macroscopic transport models, currently discussed enhancements are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer's perspective and an outlook on future research directions is given.
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MILLER, D. A. B. "QUANTUM WELL OPTOELECTRONIC SWITCHING DEVICES". International Journal of High Speed Electronics and Systems 01, n.º 01 (marzo de 1990): 19–46. http://dx.doi.org/10.1142/s0129156490000034.

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Quantum well semiconductor structures allow small, fast, efficient optoelectronic devices such as optical modulators and switches. These are capable of logic themselves and have good potential for integration with electronic integrated circuits for parallel high speed interconnections. Devices can be made both in waveguides and two-dimensional parallel arrays. Working arrays of optical logic and memory devices have been demonstrated, to sizes as large as 2 048 elements, all externally accessible in parallel with free-space optics. This article gives an overview of the physics underlying the operation of such devices, and describes the principles of several of the device types, including self-electrooptic effect devices (SEEDs).
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Cahay, M. y S. Bandyopadhyay. "Semiconductor quantum devices". IEEE Potentials 12, n.º 1 (febrero de 1993): 18–23. http://dx.doi.org/10.1109/45.207169.

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Sakaki, Hiroyuki. "Quantum microstructure devices". Solid State Communications 92, n.º 1-2 (octubre de 1994): 119–27. http://dx.doi.org/10.1016/0038-1098(94)90865-6.

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Liu, H. C. "New quantum devices". Physica E: Low-dimensional Systems and Nanostructures 8, n.º 2 (agosto de 2000): 170–73. http://dx.doi.org/10.1016/s1386-9477(00)00135-1.

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Luryi, Serge. "Quantum capacitance devices". Applied Physics Letters 52, n.º 6 (8 de febrero de 1988): 501–3. http://dx.doi.org/10.1063/1.99649.

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Capasso, Federico y Supriyo Datta. "Quantum Electron Devices". Physics Today 43, n.º 2 (febrero de 1990): 74–82. http://dx.doi.org/10.1063/1.881226.

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Spagnolo, Michele, Joshua Morris, Simone Piacentini, Michael Antesberger, Francesco Massa, Andrea Crespi, Francesco Ceccarelli, Roberto Osellame y Philip Walther. "Experimental photonic quantum memristor". Nature Photonics 16, n.º 4 (24 de marzo de 2022): 318–23. http://dx.doi.org/10.1038/s41566-022-00973-5.

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AbstractMemristive devices are a class of physical systems with history-dependent dynamics characterized by signature hysteresis loops in their input–output relations. In the past few decades, memristive devices have attracted enormous interest in electronics. This is because memristive dynamics is very pervasive in nanoscale devices, and has potentially groundbreaking applications ranging from energy-efficient memories to physical neural networks and neuromorphic computing platforms. Recently, the concept of a quantum memristor was introduced by a few proposals, all of which face limited technological practicality. Here we propose and experimentally demonstrate a novel quantum-optical memristor (based on integrated photonics) that acts on single-photon states. We fully characterize the memristive dynamics of our device and tomographically reconstruct its quantum output state. Finally, we propose a possible application of our device in the framework of quantum machine learning through a scheme of quantum reservoir computing, which we apply to classical and quantum learning tasks. Our simulations show promising results, and may break new ground towards the use of quantum memristors in quantum neuromorphic architectures.
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Tesis sobre el tema "Quantum devices"

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Felle, Martin Connor Patrick. "Telecom wavelength quantum devices". Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/270019.

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Semiconductor quantum dots (QDs) are well established as sub-Poissonian sources of entangled photon pairs. To improve the utility of a QD light source, it would be advantageous to extend their emission further into the near infrared, into the low absorption wavelength windows utilised in long-haul optical telecommunication. Initial experiments succeeded in interfering O-band (1260—1360 nm) photons from an InAs/GaAs QD with dissimilar photons from a laser, an important mechanism for quantum teleportation. Interference visibilities as high as 60 ± 6 % were recorded, surpassing the 50 % threshold imposed by classical electrodynamics. Later, polarisation-entanglement of a similar QD was observed, with pairs of telecom-wavelength photons from the radiative cascade of the biexciton state exhibiting fidelities of 92.0 ± 0.2 % to the Bell state. Subsequently, an O-band telecom-wavelength quantum relay was realised. Again using an InAs/GaAs QD device, this represents the first implementation of a sub-Poissonian telecom-wavelength quantum relay, to the best knowledge of the author. The relay proved capable of implementing the famous four-state BB84 protocol, with a mean teleportation fidelity as high as 94.5 ± 2.2 %, which would contribute 0.385 secure bits per teleported qubit. After characterisation by way of quantum process tomography, the performance of the relay was also evaluated to be capable of implementing a six-state QKD protocol. In an effort to further extend the emitted light from a QD into the telecom C-band (1530—1565 nm), alternative material systems were investigated. InAs QDs on a substrate of InP were shown to emit much more readily in the fibre-telecom O- and C-bands than their InAs/GaAs counterparts, largely due to the reduced lattice mismatch between the QD and substrate for InAs/InP (~3 %) compared to InAs/GaAs (~7 %). Additionally, to minimize the fine structure splitting (FSS) of the exciton level, which deteriorates the observed polarisation-entanglement, a new mode of dot growth was investigated. Known as droplet epitaxy (D-E), QDs grown in this mode showed a fourfold reduction in the FSS compared to dots grown in the Stranski-Krastanow mode. This improvement would allow observation of polarisation-entanglement in the telecom C-band. In subsequent work performed by colleagues at the Toshiba Cambridge Research Labs, these D-E QDs were embedded in a p-i-n doped optical cavity, processed with electrical contacts, and found to emit entangled pairs of photons under electrical excitation. The work of this thesis provides considerable technological advances to the field of entangled-light sources, that in the near future may allow for deterministic quantum repeaters operating at megahertz rates, and in the further future could facilitate the distribution of coherent multipartite states across a distributed quantum network.
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Wettstein, Andreas. "Quantum effects in MOS devices /". Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13649.

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Forsberg, Erik. "Electronic and Photonic Quantum Devices". Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3476.

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In this thesis various subjects at the crossroads of quantummechanics and device physics are treated, spanning from afundamental study on quantum measurements to fabricationtechniques of controlling gates for nanoelectroniccomponents.

Electron waveguide components, i.e. electronic componentswith a size such that the wave nature of the electron dominatesthe device characteristics, are treated both experimentally andtheoretically. On the experimental side, evidence of partialballistic transport at room-temperature has been found anddevices controlled by in-plane Pt/GaAs gates have beenfabricated exhibiting an order of magnitude improvedgate-efficiency as compared to an earlier gate-technology. Onthe theoretical side, a novel numerical method forself-consistent simulations of electron waveguide devices hasbeen developed. The method is unique as it incorporates anenergy resolved charge density calculation allowing for e.g.calculations of electron waveguide devices to which a finitebias is applied. The method has then been used in discussionson the influence of space-charge on gate-control of electronwaveguide Y-branch switches.

Electron waveguides were also used in a proposal for a novelscheme of carrierinjection in low-dimensional semiconductorlasers, a scheme which altogether by- passes the problem ofslow carrier relaxation in suchstructures. By studying aquantum mechanical two-level system serving as a model forelectroabsorption modulators, the ultimate limits of possiblemodulation rates of such modulators have been assessed andfound to largely be determined by the adiabatic response of thesystem. The possibility of using a microwave field to controlRabi oscillations in two-level systems such that a large numberof states can be engineered has also been explored.

A more fundamental study on quantum mechanical measurementshas been done, in which the transition from a classical to aquantum "interaction free" measurement was studied, making aconnection with quantum non-demolition measurements.

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Holder, Jenna Ka Ling. "Quantum structures in photovoltaic devices". Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:d23c2660-bdba-4a4f-9d43-9860b9aabdb8.

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A study of three novel solar cells is presented, all of which incorporate a low-dimensional quantum confined component in a bid to enhance device performance. Firstly, intermediate band solar cells (IBSCs) based on InAs quantum dots (QDs) in a GaAs p-i-n structure are studied. The aim is to isolate the InAs QDs from the GaAs conduction band by surrounding them with wider band gap aluminium arsenide. An increase in open circuit voltage (VOC) and decrease in short circuit current (Jsc) is observed, causing no overall change in power conversion efficiency. Dark current - voltage measurements show that the increase in VOC is due to reduced recombination. Electroreflectance and external quantum efficiency measurements attribute the decrease in Jsc primarily to a reduction in InGaAs states between the InAs QD and GaAs which act as an extraction pathway for charges in the control device. A colloidal quantum dot (CQD) bulk heterojunction (BHJ) solar cell composed of a blend of PbS CQDs and ZnO nanoparticles is examined next. The aim of the BHJ is to increase charge separation by increasing the heterojunction interface. Different concentration ratios of each phase are tested and show no change in Jsc, due primarily to poor overall charge transport in the blend. VOC increases for a 30 wt% ZnO blend, and this is attributed largely to a reduction in shunt resistance in the BHJ devices. Finally, graphene is compared to indium tin oxide (ITO) as an alternative transparent electrode in squaraine/ C70 solar cells. Due to graphene’s high transparency, graphene devices have enhanced Jsc, however, its poor sheet resistance increases the series resistance through the device, leading to a poorer fill factor. VOC is raised by using MoO3 as a hole blocking layer. Absorption in the squaraine layer is found to be more conducive to current extraction than in the C70 layer. This is due to better matching of exciton diffusion length and layer thickness in the squaraine and to the minority carrier blocking layer adjacent to the squaraine being more effective than the one adjacent to the C70.
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Dikme, Altay. "A Quantum Neural Network for Noisy Intermediate Scale Quantum Devices". Thesis, KTH, Tillämpad fysik, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-300394.

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Neural networks have helped the field of machine learning grow tremendously in the past decade, and can be used to solve a variety of real world problems such as classification problems. On another front, the field of quantum computing has advanced, with quantum devices publicly available via the cloud. The availability of such systems has led to the creation of a new field of study, Quantum Machine Learning, which attempts to create quantum analogues of classical machine learning techniques. One such method is the Quantum Neural Network (QNN) inspired by classical neural networks. In this thesis we design a QNN compatible with Noisy Intermediate Scale Quantum (NISQ) devices, which are characterised by a limited number of qubits and small decoherence times. Furthermore we provide an implementation of the QNN classifier using the open source quantum computing software development kit, Qiskit provided by IBM. We perform a binary classification experiment on a subset of the MNIST data set, and our results showed a classification accuracy of 80.6% for a QNN with circuit depth 20.
Neurala nätverk har varit en stor del av utvecklingen av maskininlärning som ett forskningsområde i det senaste årtiondet, och dessa nätverk har flera appliceringsområden, som till exempel klassificieringsproblemet. Parallelt med denna utveckling, har forskning kring kvantdatorer vuxit fram, med flera kvantsystem allmänt tillgängliga via molnet. Denna tillgänglighet har lett till skapandet av ett nytt forskningsområde; kvantmaskininlärning, som försöker skapa motsvarigheter till klassiska maskininlärningsmetoder på kvantdatorer. En sån metod är kvantneurala nätverk som inspireras av klassiska neurala nätverk. I denna avhandling designar vi ett kvantneuralt närverk som är kompatibel med nuvarande kvantsystem, som kännetecknas av ett begränsat antal qubits och korta dekoherenstider. Dessutom tillhandahåller vi en implementering av en klassificerare med ett kvantneuralt nätverk, med hjälp av IBMs programvaruutvecklingsmiljö Qiskit. Vi utför ett binärt klassificeringsexperiment på en delmängd av MNIST-datamängden, och våra resultatvisar en klassificeringsnoggrannhet på 80,6% för ett kvantneuralt nätverk med kretsdjup 20.
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Autebert, Claire. "AlGaAs photonic devices : from quantum state generation to quantum communications". Thesis, Sorbonne Paris Cité, 2016. http://www.theses.fr/2016USPCC166/document.

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Un des plus grands challenges dans le domaine de l’information quantique est la génération, manipulation et détection de plusieurs qubits sur des micro-puces. On assiste ainsi à un véritable essor des technologies pour l’information quantique et pour transmettre l’information, les photons ont un grand avantage sur les autres systèmes, grâce à leur grande vitesse et leur immunité contre la décohérence.Mon travail de thèse porte sur la conception, fabrication et caractérisation d’une source de photons intriqués en matériaux semiconducteurs d’une très grande compacité. Ce dispositif fonctionne à température ambiante, et émet dans la bande de longueurs d’onde télécom. Après une présentation des concepts fondamentaux (chap. 1), le chap. 2 explique la conception et la fabrication des dispositifs.Le chap. 3 présente les caractérisations opto-électroniques des échantillons pompés électriquement, et le chap. 4 les résultats des mesures de pertes et des caractérisations non-linéaires optiques (génération de seconde harmonique, conversion paramétrique spontanée et reconstruction de l’intensité spectrale jointe). Les chap. 5 et 6 se concentrent sur la caractérisation des états quantiques générés par un dispositif passif (démonstration de l’indiscernabilité et de l’intrication en énergie-temps) et leur utilisation dans un protocole de distribution de clés quantiques multi-utilisateurs (intrication en polarisation). Finalement le travail sur le premier dispositif produisant des pairs de photons dansles longueurs d’onde télécoms, injecté électriquement et fonctionnant à température ambiante est présenté (chap. 7)
One of the main issues in the domain of quantum information and communication is the generation,manipulation and detection of several qubits on a single chip. Several approaches are currentlyinvestigated for the implementation of qubits on different types of physical supports and a varietyof quantum information technologies are under development: for quantum memories, spectacularadvances have been done on trapped atoms and ions, while to transmit information, photons arethe ideal support thanks to their high speed of propagation and their almost immunity againstdecoherence. My thesis work has been focused on the conception, fabrication and characterization ofa miniaturized semiconductor source of entangled photons, working at room temperature and telecomwavelengths. First the theoretical concepts relevant to understand the work are described (chapter1). Then the conception and fabrication procedures are given (chapter 2). Chapter 3 presents theoptoelectronics characterization of the device under electrical pumping, and chapter 4 the resultson the optical losses measurements and the nonlinear optical characterization (second harmonicgeneration, spontaneous parametric down conversion and joint spectral intensity reconstruction).Chapters 5 and 6 focus on the characterization of the quantum state generated by a passive sample(demonstration of indistinguishability and energy-time entanglement) and its utilization in a multiuserquantum key distribution protocol (polarization entanglement). Finally the work on the firstelectrically driven photon pairs source emitting in the telecom range and working at room temperatureis presented (chapter 7)
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Jones, Gregory Millington. "Quantum transport in nanoscale semiconductor devices". College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3831.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2006.
Thesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Koch, Jens. "Quantum transport through single molecule devices". [S.l.] : [s.n.], 2006. http://www.diss.fu-berlin.de/2006/380/index.html.

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Earnshaw, Mark Peter. "Quantum well electrorefraction materials and devices". Thesis, University of York, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298387.

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McNeil, Robert Peter Gordon. "Surface acoustic wave quantum electronic devices". Thesis, University of Cambridge, 2012. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.610718.

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Libros sobre el tema "Quantum devices"

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Wang, Zhiming M., ed. Quantum Dot Devices. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-3570-9.

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service), SpringerLink (Online, ed. Quantum Dot Devices. New York, NY: Springer New York, 2012.

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Yu, Peng y Zhiming M. Wang, eds. Quantum Dot Optoelectronic Devices. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35813-6.

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Razeghi, Manijeh. Technology of Quantum Devices. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1056-1.

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G, Einspruch Norman y Frensley William R, eds. Heterostructures and quantum devices. San Diego: Academic Press, 1994.

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Technology of quantum devices. London ; New York: Springer, 2010.

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Capasso, Federico. Physics of Quantum Electron Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990.

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Ferry, David K., Harold L. Grubin, Carlo Jacoboni y Anti-Pekka Jauho, eds. Quantum Transport in Ultrasmall Devices. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-1967-6.

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Rossi, Fausto. Theory of Semiconductor Quantum Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-10556-2.

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Magnus, Wim y Wim Schoenmaker. Quantum Transport in Submicron Devices. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-642-56133-7.

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Capítulos de libros sobre el tema "Quantum devices"

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Zhang, Anqi, Gengfeng Zheng y Charles M. Lieber. "Quantum Devices". En Nanowires, 177–201. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41981-7_7.

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Hirvensalo, Mika. "Devices for Computation". En Quantum Computing, 29–47. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09636-9_3.

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Hirvensalo, Mika. "Devices for Computation". En Quantum Computing, 13–39. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04461-2_2.

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Hunsperger, Robert G. "Quantum Well Devices". En Springer Series in Optical Sciences, 277–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-540-48730-2_16.

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Hunsperger, Robert G. "Quantum-Well Devices". En Integrated Optics, 375–401. New York, NY: Springer New York, 2009. http://dx.doi.org/10.1007/b98730_18.

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Fu, Ying. "Electronic Quantum Devices". En Physical Models of Semiconductor Quantum Devices, 185–269. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-7174-1_4.

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Fu, Ying y Magnus Willander. "Electronic quantum devices". En Physical Models of Semiconductor Quantum Devices, 103–78. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5141-6_4.

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Datta, S. "Quantum Interference Devices". En Physics of Quantum Electron Devices, 321–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-74751-9_10.

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Hunsperger, Robert G. "Quantum-Well Devices". En Integrated Optics, 287–310. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03159-9_16.

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Hunsperger, Robert G. "Quantum-Well Devices". En Advanced Texts in Physics, 325–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-540-38843-2_18.

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Actas de conferencias sobre el tema "Quantum devices"

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"Quantum devices". En Conference on Electron Devices, 2005 Spanish. IEEE, 2005. http://dx.doi.org/10.1109/sced.2005.1504337.

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Eisert, Jens S. "Semi-device dependent characterization of quantum devices (Conference Presentation)". En Quantum Technologies 2020, editado por Sara Ducci, Eleni Diamanti, Nicolas Treps y Shannon Whitlock. SPIE, 2020. http://dx.doi.org/10.1117/12.2566916.

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Lentine, A. L., S. J. Hinterlong, T. J. Cloonan, F. B. Mccormick, David A. B. Miller, L. M. F. Chirovsky, L. A. D'asaro, R. F. Kopf y J. M. Kuo. "Quantum well optical tristate devices". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mii2.

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We demonstrate integrated quantum well tristate logic devices for possible use in bus architectures. The devices have two optical output beams which represent the logic state of the output data depending on their relative power. When the power in one output beam exceeds the other, the logic state is a logic one or zero depending on which beam has the largest optical power. When the power in both output beams is equal, the device is in a disabled state. These optical devices are analogous to the tristate devices often used in electronic buses, where each device can be actively on, actively off, or disabled, with, at most, one device on the bus active at a time. We show two methods of generating tristate data, one using tristate quantum well modulators and one using tristate self-electrooptic effect devices (SEEDs),1 and we demonstrate a simple optical bus consisting of three such devices. Finally, we comment on the limitations on the number of devices that can be connected to a bus of this type.
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Curty, Marcos y Hoi-Kwong Lo. "Quantum cryptography with malicious devices". En Quantum Technologies and Quantum Information Science, editado por Mark T. Gruneisen, Miloslav Dusek y John G. Rarity. SPIE, 2018. http://dx.doi.org/10.1117/12.2502066.

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Liu, H. C. "THz Quantum Devices". En Laser and Tera-Hertz Science and Technology. Washington, D.C.: OSA, 2012. http://dx.doi.org/10.1364/ltst.2012.sth2b.1.

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Coleman, James J. "Quantum Dot Devices". En European Conference and Exposition on Optical Communications. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/ecoc.2011.tu.6.lesaleve.3.

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Fafard, Simon, Hui C. Liu, Zbigniew R. Wasilewski, John P. McCaffrey, M. Spanner, Sylvain Raymond, C. N. Allen et al. "Quantum dot devices". En Photonics Taiwan, editado por Yan-Kuin Su y Pallab Bhattacharya. SPIE, 2000. http://dx.doi.org/10.1117/12.392130.

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Silberhorn, Christine. "Nonlinear Quantum Devices". En 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2019. http://dx.doi.org/10.1109/cleoe-eqec.2019.8871609.

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Ryzhii, Victor y Irina Khmyrova. "Quantum dot and quantum wire infrared photodetectors". En Integrated Optoelectronics Devices, editado por Marek Osinski, Hiroshi Amano y Peter Blood. SPIE, 2003. http://dx.doi.org/10.1117/12.483605.

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Langione, Matt. "Markets for Quantum Enabled Devices". En Quantum West, editado por Conference Chair. SPIE, 2021. http://dx.doi.org/10.1117/12.2593554.

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Informes sobre el tema "Quantum devices"

1

Orlando, Terry P. Quantum Computation with Superconducting Quantum Devices. Fort Belvoir, VA: Defense Technical Information Center, abril de 2008. http://dx.doi.org/10.21236/ada480997.

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van der Heijden, Joost. Optimizing electron temperature in quantum dot devices. QDevil ApS, marzo de 2021. http://dx.doi.org/10.53109/ypdh3824.

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The performance and accuracy of quantum electronics is substantially degraded when the temperature of the electrons in the devices is too high. The electron temperature can be reduced with appropriate thermal anchoring and by filtering both the low frequency and radio frequency noise. Ultimately, for high performance filters the electron temperature can approach the phonon temperature (as measured by resistive thermometers) in a dilution refrigerator. In this application note, the method for measuring the electron temperature in a typical quantum electronics device using Coulomb blockade thermometry is described. This technique is applied to find the readily achievable electron temperature in the device when using the QFilter provided by QDevil. With our thermometry measurements, using a single GaAs/AlGaAs quantum dot in an optimized experimental setup, we determined an electron temperature of 28 ± 2 milli-Kelvin for a dilution refrigerator base temperature of 18 milli-Kelvin.
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Peyghambarian, Nasser. (AASERT 95) Quantum Dot Devices and Optoelectronic Device Characterization. Fort Belvoir, VA: Defense Technical Information Center, mayo de 1998. http://dx.doi.org/10.21236/ada379743.

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Likharev, Konstantin K., P. Bunyk, W. Chao, T. Filippov y Y. Kameda. Advanced Single Flux Quantum Devices. Fort Belvoir, VA: Defense Technical Information Center, febrero de 1999. http://dx.doi.org/10.21236/ada361044.

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Spencer, Gregory F., Wiley P. Kirk, Robert T. Bate y Richard Wilkins. Radiation Effects in Quantum Devices. Fort Belvoir, VA: Defense Technical Information Center, agosto de 2000. http://dx.doi.org/10.21236/ada383248.

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Miller, David A. Ultrafast Quantum Well Optoelectronic Devices. Fort Belvoir, VA: Defense Technical Information Center, julio de 2000. http://dx.doi.org/10.21236/ada384413.

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Orlando, Terry P. Student Support for Quantum Computation With Superconducting Quantum Devices. Fort Belvoir, VA: Defense Technical Information Center, enero de 2005. http://dx.doi.org/10.21236/ada430138.

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CEDERBERG, JEFFREY G., ROBERT M. BIEFELD, H. C. SCHNEIDER y WENG W. CHOW. Growth and Characterization of Quantum Dots and Quantum Dots Devices. Office of Scientific and Technical Information (OSTI), abril de 2003. http://dx.doi.org/10.2172/810938.

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Blume-Kohout, Robin J. y Travis L. Scholten. Characterizing Quantum Devices Using Model Selection. Office of Scientific and Technical Information (OSTI), agosto de 2015. http://dx.doi.org/10.2172/1221861.

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Grubin, H. L. y J. P. Kreskovsky. Studying Quantum Phase-Based Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 1988. http://dx.doi.org/10.21236/ada200376.

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