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Artículos de revistas sobre el tema "Pre amorphization"

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Publicado: 25 de mayo de 2024

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1

Wen, D. S., J. Liu, C. M. Osburn y J. J. Wortman. "Interface Traps Caused by Ge Pre‐Amorphization". Journal of The Electrochemical Society 132, n.º 10 (1 de octubre de 1985): 2514–16. http://dx.doi.org/10.1149/1.2113613.

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2

Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, W. X. Lu y F. W. Saris. "Pre-amorphization damage in ion-implanted silicon". Materials Science Reports 6, n.º 7-8 (agosto de 1991): 275–366. http://dx.doi.org/10.1016/0920-2307(91)90001-4.

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3

Andrzejewski, M., N. Casati y A. Katrusiak. "Reversible pressure pre-amorphization of a piezochromic metal–organic framework". Dalton Transactions 46, n.º 43 (2017): 14795–803. http://dx.doi.org/10.1039/c7dt02511d.

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4

Cellini, C., A. Carnera, M. Berti, A. Gasparotto, D. Steer, M. Servidori y S. Milita. "Pre-amorphization damage study in as-implanted silicon". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96, n.º 1-2 (marzo de 1995): 227–31. http://dx.doi.org/10.1016/0168-583x(94)00488-9.

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5

Hempel, Nele-Johanna, Matthias M. Knopp, Ragna Berthelsen y Korbinian Löbmann. "Convection-Induced vs. Microwave Radiation-Induced in situ Drug Amorphization". Molecules 25, n.º 5 (27 de febrero de 2020): 1068. http://dx.doi.org/10.3390/molecules25051068.

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The aim of the study was to investigate the suitability of a convection oven to induce in situ amorphization. The study was conducted using microwave radiation-induced in situ amorphization as reference, as it has recently been shown to enable the preparation of a fully (100%) amorphous solid dispersion of celecoxib (CCX) in polyvinylpyrrolidone (PVP) after 10 min of continuous microwaving. For comparison, the experimental setup of the microwave-induced method was mimicked for the convection-induced method. Compacts containing crystalline CCX and PVP were prepared and either pre-conditioned at 75% relative humidity or kept dry to investigate the effect of sorbed water on the amorphization kinetics. Subsequently, the compacts were heated for 5, 10, 15, 20, or 30 min in the convection oven at 100 °C. The degree of amorphization of CCX in the compacts was subsequently quantified using transmission Raman spectroscopy. Using the convection oven, the maximum degree of amorphization achieved was 96.1% ± 2.1% (n = 3) for the conditioned compacts after 30 min of heating and 14.3% ± 1.4% (n = 3) for the dry compacts after 20 min of heating, respectively. Based on the results from the convection and the microwave oven, it was found that the sorbed water acts as a plasticizer in the conditioned compacts (i.e., increasing molecular mobility), which is advantageous for in situ amorphization in both methods. Since the underlying mechanism of heating between the convection oven and microwave oven differs, it was found that convection-induced in situ amorphization is inferior to microwave radiation-induced in situ amorphization in terms of amorphization kinetics with the present experimental setup.
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6

Murakami, Y., I. Tsunoda, H. Kido, A. Kenjo, T. Sadoh, M. Miyao y T. Yoshitake. "Enhanced solid-phase growth of β-FeSi2 by pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (mayo de 2003): 304–7. http://dx.doi.org/10.1016/s0168-583x(03)00750-x.

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7

Azarov, A. Yu, A. I. Titov y S. O. Kucheyev. "Effect of pre-existing disorder on surface amorphization in GaN". Journal of Applied Physics 108, n.º 3 (agosto de 2010): 033505. http://dx.doi.org/10.1063/1.3462380.

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8

Li, Hong-Jyh, Peter Zeitzoff, Larry Larson y Sanjay Banerjee. "B diffusion in Si with pre-amorphization of different species". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 22, n.º 5 (2004): 2380. http://dx.doi.org/10.1116/1.1795250.

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9

Delwail, C., S. Joblot, F. Mazen, F. Abbate, L. Lachal, F. Milesi, M. Bertoglio et al. "Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide". Microelectronic Engineering 254 (febrero de 2022): 111705. http://dx.doi.org/10.1016/j.mee.2021.111705.

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10

Felch, S. B., H. Graoui, G. Tsai y A. Mayur. "Optimization of pre-amorphization and dopant implant conditions for advanced annealing". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, n.º 1-2 (agosto de 2005): 35–40. http://dx.doi.org/10.1016/j.nimb.2005.04.075.

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11

Sasaki, Y., C. G. Jin, K. Okashita, H. Tamura, H. Ito, B. Mizuno, H. Sauddin et al. "New method of Plasma doping with in-situ Helium pre-amorphization". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237, n.º 1-2 (agosto de 2005): 41–45. http://dx.doi.org/10.1016/j.nimb.2005.04.109.

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12

Park, Soon Yeol, Kun-Sik Sung y Taeyoung Won. "Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implantation after a Pre-amorphization Process". Journal of the Korean Physical Society 58, n.º 5(1) (13 de mayo de 2011): 1434–38. http://dx.doi.org/10.3938/jkps.58.1434.

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13

Quintero, A., F. Mazen, P. Gergaud, N. Bernier, J. M. Hartmann, V. Reboud, E. Cassan y Ph Rodriguez. "Enhanced thermal stability of Ni/GeSn system using pre-amorphization by implantation". Journal of Applied Physics 129, n.º 11 (21 de marzo de 2021): 115302. http://dx.doi.org/10.1063/5.0038253.

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14

Siegrist, Marco E., Michael Siegfried y Jörg F. Löffler. "High-purity amorphous Zr52.5Cu17.9Ni14.6Al10Ti5 powders via mechanical amorphization of crystalline pre-alloys". Materials Science and Engineering: A 418, n.º 1-2 (febrero de 2006): 236–40. http://dx.doi.org/10.1016/j.msea.2005.11.024.

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15

Schreutelkamp, R. J., J. S. Custer, J. R. Liefting, F. W. Saris, W. X. Lu, B. X. Zhang y Z. L. Wang. "Pre-amorphization damage in Si(100) implanted with high mass MeV ions". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62, n.º 3 (enero de 1992): 372–76. http://dx.doi.org/10.1016/0168-583x(92)95259-t.

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16

Park, Soonyeol, Bumgoo Cho, Seungsu Yang y Taeyoung Won. "Kinetic Monte Carlo (kMC) Simulation of Carbon Co-Implant on Pre-Amorphization Process". Journal of Nanoscience and Nanotechnology 10, n.º 5 (1 de mayo de 2010): 3600–3603. http://dx.doi.org/10.1166/jnn.2010.2263.

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17

Kim, Joong-sik y Taeyoung Won. "Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization". Microelectronic Engineering 84, n.º 5-8 (mayo de 2007): 1556–61. http://dx.doi.org/10.1016/j.mee.2007.01.254.

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18

Park, Soon-Yeol, Young-Kyu Kim y Taeyoung Won. "Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process". Microelectronic Engineering 86, n.º 3 (marzo de 2009): 430–33. http://dx.doi.org/10.1016/j.mee.2008.08.010.

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19

Simoen, E., G. Brouwers, A. Satta, M. L. David, F. Pailloux, B. Parmentier, T. Clarysse, J. Goossens, W. Vandervorst y M. Meuris. "Shallow boron implantations in Ge and the role of the pre-amorphization depth". Materials Science in Semiconductor Processing 11, n.º 5-6 (octubre de 2008): 368–71. http://dx.doi.org/10.1016/j.mssp.2008.09.006.

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20

Park, Soon-Yeol, Young-Kyu Kim y Taeyoung Won. "Investigation of boron diffusion after pre-amorphization implant with kinetic Monte Carlo approach". Journal of Computational Electronics 7, n.º 3 (21 de marzo de 2008): 419–22. http://dx.doi.org/10.1007/s10825-008-0236-0.

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21

Mao, Shujuan, Guilei Wang, Jing Xu, Dan Zhang, Xue Luo, Wenwu Wang, Dapeng Chen et al. "Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies". Microelectronic Engineering 201 (diciembre de 2018): 1–5. http://dx.doi.org/10.1016/j.mee.2018.09.006.

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22

Park, Soon-Yeol y Taeyoung Won. "Impact of Carbon Co-Implant on the Pre-Amorphization Process: Kinetic Monte Carlo (KMC)". Journal of Computational and Theoretical Nanoscience 6, n.º 11 (1 de noviembre de 2009): 2423–26. http://dx.doi.org/10.1166/jctn.2009.1301.

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23

Yu, Min, Rong Wang, Huihui Ji, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang y Hideki Oka. "Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling". Microelectronic Engineering 81, n.º 1 (julio de 2005): 162–67. http://dx.doi.org/10.1016/j.mee.2005.05.003.

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24

Murakami, H., S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi y S. Miyazaki. "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)". ECS Transactions 64, n.º 6 (12 de agosto de 2014): 423–29. http://dx.doi.org/10.1149/06406.0423ecst.

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25

Tan, E. J., K. L. Pey, D. Z. Chi, P. S. Lee y L. J. Tang. "Improved electrical performance of erbium silicide Schottky diodes formed by Pre-RTA amorphization of Si". IEEE Electron Device Letters 27, n.º 2 (febrero de 2006): 93–95. http://dx.doi.org/10.1109/led.2005.863142.

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26

Cheng, Jung-Chien, Jia-En Lee y Bing-Yue Tsui. "Schottky barrier diodes isolated by local oxidation of SiC (LOCOSiC) using pre-amorphization implantation technology". Solid-State Electronics 171 (septiembre de 2020): 107834. http://dx.doi.org/10.1016/j.sse.2020.107834.

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27

Li, Zhong-Hua, Yu-Long Jiang, Run-Ling Li, Yan-Wei Zhang y Yong-Feng Cao. "Performance Improvement by Cold Xe Pre-Amorphization Implant for Nickel Silicidation of 28-nm PMOSFET". IEEE Electron Device Letters 40, n.º 5 (mayo de 2019): 777–79. http://dx.doi.org/10.1109/led.2019.2907688.

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28

Ryu, Ho Jin, Yeon Soo Kim, G. L. Hofman, J. Rest, Jong Man Park y Chang Kyu Kim. "Radiation-Induced Recrystallization of U-Mo Fuel Particles and Radiation-Induced Amorphization of Interaction Products in U-Mo/Al Dispersion Fuel". Materials Science Forum 558-559 (octubre de 2007): 319–22. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.319.

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Two kinds of radiation-induced structural changes were observed in U-Mo/Al dispersion fuel: radiation-induced recrystallization of U-Mo fuel particles and radiation-induced amorphization of interaction products. During irradiation, U-Mo fuel showed refined microstructures of submicron-size grains due to dynamic recrystallization, occurring initially from pre-existing grain boundaries. The interaction products formed by interdiffusion between the U-Mo particles and Al matrix in U-Mo/Al dispersion fuel transformed from crystalline to amorphous during irradiation. In this paper we deal with both of the phenomena simultaneously.
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29

Park, Soon-Yeol, Bum-Goo Cho, Seung-Su Yang y Taeyoung Won. "Kinetic Monte Carlo (kMC) Study of the Effect of CarbonCo-implantation on the Pre-amorphization Process". Journal of the Korean Physical Society 55, n.º 1 (15 de julio de 2009): 331–35. http://dx.doi.org/10.3938/jkps.55.331.

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30

Bae, Jong-Uk, Dong Kyun Sohn, Ji-Soo Park, Byung Hak Lee, Chang Hee Han y Jin Won Park. "Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines". Journal of Applied Physics 86, n.º 9 (noviembre de 1999): 4943–48. http://dx.doi.org/10.1063/1.371523.

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31

Kim, Seong-Dong, Cheol-Min Park y Jason C. S. Woo. "Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation". Solid-State Electronics 49, n.º 1 (enero de 2005): 131–35. http://dx.doi.org/10.1016/j.sse.2004.07.008.

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32

BIBIĆ, N., V. MILINOVIĆ, M. MILOSAVLJEVIĆ, F. SCHREMPEL, M. ŠILJEGOVIĆ y K. P. LIEB. "Effects of the Ar ions pre-amorphization of Si substrateon interface mixing of Fe/Si bilayers". Journal of Microscopy 232, n.º 3 (diciembre de 2008): 539–41. http://dx.doi.org/10.1111/j.1365-2818.2008.02143.x.

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33

Xu, Genbao, W. A. Chiou, M. Meshii y P. R. Okamoto. "HREM study of amorphization of CuTi irradiated by 1 MeV electron". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 124–25. http://dx.doi.org/10.1017/s0424820100173753.

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Electron irradiation-induced amorphization of CuTi was studied by high resolution electron microscopy (HREM). Special attention was directed to correlate the spacial distribution of structural change from the perfect crystalline state to the complete amorphous state with the electron density distribution of the focussed beam which was used to amorphize the specimens.An alloy button of Cu-54 at % Ti was prepared by arc-melting and subsequently annealed at 1173K for three days. HREM samples were spark-cut and thinned by jet polishing. The samples were first examined in a Hitachi H 9000 HREM and selected for irradiation at 10K in a 1.2 MeV Kratos-AEl EM 7 high voltage electron microscope. The irradiation was carried out by a fully focused beam for which the electron density distribution was pre-determined. Finally, the irradiated samples were reexamined across the crystal/amorphous (C/A) boundary in the H 9000. The electron dose at the point of examination was estimated by carefully comparing the positions in HREM images with the interrupted position of bend contour in low magnification and utilizing the electron density distribution.
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34

Paul, Silke y Wilfried Lerch. "Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing". Materials Science Forum 573-574 (marzo de 2008): 207–28. http://dx.doi.org/10.4028/www.scientific.net/msf.573-574.207.

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This work presents a summary on the use of rapid thermal processing for implant annealing. It gives a short historical overview of rapid thermal processing systems and the first implant anneal processes on these newly developed tools. We then looked in detail on the soak anneal and spike anneal processes and the influence of certain process parameters. For the soak anneal influences of the ambient, either oxidizing or nitriding, were evaluated. The results of spike anneal processes are influenced by the pre-stabilization temperature, ramp-up and ramp-down rate, peak temperature, and gaseous ambient. The need for shallow, abrupt and highly activated junctions leads to co-implantation of species like fluorine or carbon in conjunction with pre-amorphization. Nowadays, combinations of spike and millisecond annealing as well as millisecond annealing alone are in the focus.
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35

Zhang, Dan, Jing Xu, Jianfeng Gao, Anyan Du, Jing Zhang, Shujuan Mao, Yang Men et al. "Impact of Ge pre-amorphization implantation on Co/Co-Ti/n+-Si contacts in advanced Co interconnects". Japanese Journal of Applied Physics 59, SL (21 de mayo de 2020): SLLB01. http://dx.doi.org/10.35848/1347-4065/ab922f.

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36

Ozcan, Ahmet S., Donald Wall, Jean Jordan-Sweet y Christian Lavoie. "Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)". Applied Physics Letters 102, n.º 17 (29 de abril de 2013): 172107. http://dx.doi.org/10.1063/1.4801928.

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37

Ghanad Tavakoli, Shahram, Sungkweon Baek y Hyunsang Hwang. "Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon". Materials Science and Engineering: B 114-115 (diciembre de 2004): 376–80. http://dx.doi.org/10.1016/j.mseb.2004.07.067.

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38

Sahoo, Deepak Ranjan, Izabela Szlufarska, Dane Morgan y Narasimhan Swaminathan. "Role of pre-existing point defects on primary damage production and amorphization in silicon carbide (β-SiC)". Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 414 (enero de 2018): 45–60. http://dx.doi.org/10.1016/j.nimb.2017.10.011.

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39

Titov, A. I., K. V. Karabeshkin, A. I. Struchkov, P. A. Karaseov y A. Azarov. "Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms". Journal of Physics D: Applied Physics 55, n.º 17 (31 de enero de 2022): 175103. http://dx.doi.org/10.1088/1361-6463/ac4a38.

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Abstract Realization of radiation-hard electronic devices that are able to work in harsh environments requires deep understanding of the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder, employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization was observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus and argon leads to a decrease of the bulk damage.
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40

Guillemin, S., P. Gergaud, N. Bernier, L. Lachal, F. Mazen, A. Jannaud, F. Nemouchi y Ph Rodriguez. "Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms". Microelectronic Engineering 244-246 (mayo de 2021): 111571. http://dx.doi.org/10.1016/j.mee.2021.111571.

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41

Luo, Xue, Guilei Wang, Jing Xu, Ningyuan Duan, Shujuan Mao, Shi Liu, Junfeng Li et al. "Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n- and p-Ge substrate". Japanese Journal of Applied Physics 57, n.º 7S2 (20 de junio de 2018): 07MA02. http://dx.doi.org/10.7567/jjap.57.07ma02.

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42

Ohuchi, Kazuya, Katsura Miyashita, Atsushi Murakoshi, Hisao Yoshimura, Kyoichi Suguro y Yoshiaki Toyoshima. "Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond". Japanese Journal of Applied Physics 38, Part 1, No. 4B (30 de abril de 1999): 2238–42. http://dx.doi.org/10.1143/jjap.38.2238.

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43

Qiuxia Xu, Xiaofong Duan, He Qian, Haihua Liu, H. Li, Zhensheng Han, Ming Liu y Wenfang Gao. "Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension". IEEE Electron Device Letters 27, n.º 3 (marzo de 2006): 179–81. http://dx.doi.org/10.1109/led.2006.870248.

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44

Chou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Jia-Hong Huang y Yung-Hsien Wu. "Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile". IEEE Electron Device Letters 38, n.º 3 (marzo de 2017): 299–302. http://dx.doi.org/10.1109/led.2017.2647957.

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45

Ferdov, Stanislav. "Interzeolite Transformation from FAU-to-EDI Type of Zeolite". Molecules 29, n.º 8 (11 de abril de 2024): 1744. http://dx.doi.org/10.3390/molecules29081744.

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This study reports for the first time the transformation of the pre-made FAU type of zeolite to the EDI type of zeolite. The concentration of the KOH solution controls this interzeolite transformation, which unusually occurs at both room temperature and under hydrothermal conditions. The transformation involves the amorphization and partial dissolution of the parent FAU phase, followed by the crystallization of EDI zeolite. At room temperature, the transformation (11–35 days) provides access to well-shaped nano-sized crystals and hollow hierarchical particles while the hydrothermal synthesis results in faster crystallization (6–27 h). These findings reveal an example of an interzeolite transformation to a potassium zeolite that lacks common composite building units with the parent zeolite phase. Finally, this work also demonstrates the first room-temperature synthesis of EDI zeolite from a gel precursor.
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46

Chuang, Hung-Ming, Kong-Beng Thei, Sheng-Fu Tsai, Chun-Tsen Lu, Xin-Da Liao, Kuan-Ming Lee y Wen-Chau Liu. "Comparative study of double ion implant Ti salicide and pre-amorphization implant Co salicide for ultra-large-scale integration applications". Semiconductor Science and Technology 17, n.º 10 (4 de septiembre de 2002): 1075–80. http://dx.doi.org/10.1088/0268-1242/17/10/308.

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47

Chou, Chuan-Pu, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng y Yung-Hsien Wu. "Improved leakage current and device uniformity for sub-20 nm N-FinFETs by cryogenic Ge pre-amorphization implant in contact". Microelectronic Engineering 178 (junio de 2017): 137–40. http://dx.doi.org/10.1016/j.mee.2017.05.031.

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48

Abd Elbary, Ahmed, Howida K. Ibrahim y Balquees S. Hazaa. "Formulation and evaluation of colon targeted tablets containing simvastatin solid dispersion". Drugs and Therapy Studies 1, n.º 1 (19 de diciembre de 2011): 16. http://dx.doi.org/10.4081/dts.2011.e16.

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Solid dispersions (SDs) of simvastatin with mannitol, Ineutic®, Pluronic® F-68, PEG 4000 and PVP K-30 were prepared and evaluated to deliver simvastatin to the colon in a pre-solubilized form. The formula of choice was compressed into fast disintegrating tablets using drug compatible excipients and was coated with Eudragit® S100 as a pH-responsive polymer. We investigated the effects of several variables related to both SD preparation (carrier type, combined carriers and drug to carrier ratio) and tablet coating (coat level and type of plasticizer) on drug dissolution. Differential scanning caloremitry (DSC) and scanning electron microscopy (SEM) proved drug amorphization in SDs. The 1:5 simvastatin/ Pluronic® SDs showed the greatest improvement in dissolution efficiency (12.2-fold) at the lowest carrier ratio. The coating level was critical for determining the duration of the lagphase. Best results were given by the 10% coat (20:2:1 w/w Eudragit S100/ triethylcitrate/ talc). This formula resisted pre-colonic pH values and showed an adequate lag time for the intended colonic targeting (4 h), followed by an immediate release phase (t50%=249 min) in pH 7.4. The proposed coated tablets may provide a colonic delivery system for simvastatin with improved bioavailability.
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Obada, David O., David Dodoo-Arhin, Muhammad Dauda, Fatai O. Anafi, Abdulkarim S. Ahmed, Olusegun A. Ajayi y Ibraheem A. Samotu. "Effect of mechanical activation on mullite formation in an alumina-silica ceramics system at lower temperature". World Journal of Engineering 13, n.º 4 (1 de agosto de 2016): 288–93. http://dx.doi.org/10.1108/wje-08-2016-039.

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Purpose This work aims to analyze the effect of mechanical activation on structural disordering (amorphization) in an alumina-silica ceramics system and formation of mullite most notably at a lower temperature using X-ray diffraction (XRD). Also, an objective of this work is to focus on a low-temperature fabrication route for the production of mullite powders. Design/methodology/approach A batch composition of kaolin, alumina and silica was manually pre-milled and then mechanically activated in a ball mill for 30 and 60 min. The activated samples were sintered at 1,150°C for a soaking period of 2 h. Mullite formation was characterized by XRD and scanning electron microscopy (SEM). Findings It was determined that the mechanical activation increased the quantity of the mullite phase. SEM results revealed that short milling times only helped in mixing of the precursor powders and caused partial agglomeration, while longer milling times, however, resulted in greater agglomeration. Originality/value It is noted that, a manual pre-milling of approximately 20 min and a ball milling approach of 60 min milling time can be suggested as the optimum milling time for the temperature decrease succeeded for the production of mullite from the specific stoichiometric batch formed.
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Binti Aid, Siti Rahmah, Satoru Matsumoto, Toshiharu Suzuki, Gensyu Fuse y Toshihiro Nakazawa. "Boron Diffusion Behavior During the Formation of Shallow p+/n Junction Using the Combination of Ge Pre-amorphization Implantation, Pre-Annealing RTA and Post-Annealing Non-Melt Excimer Laser(NLA) Processes". ECS Transactions 19, n.º 1 (18 de diciembre de 2019): 71–77. http://dx.doi.org/10.1149/1.3118932.

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