Artículos de revistas sobre el tema "Power semicondutor"
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Arif, M. S., S. M. Ayob y Z. Salam. "Asymmetrical Nine-Level Inverter Topology with Reduce Power Semicondutor Devices". TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, n.º 1 (1 de febrero de 2018): 38. http://dx.doi.org/10.12928/telkomnika.v16i1.8520.
Texto completoZhang Dongyun, 张冬云, 谢印开 Xie Yinkai, 李丛洋 Li Congyang, 曹玄扬 Cao Xuanyang y 徐仰立 Xu Yangli. "Simulation and Optimization of High Power Semicondutor Laser Microchannel Heat Sink". Chinese Journal of Lasers 44, n.º 2 (2017): 0202008. http://dx.doi.org/10.3788/cjl201744.0202008.
Texto completoChiu, Yu Sheng, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis y Edward Yi Chang. "Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications". Japanese Journal of Applied Physics 56, n.º 9 (24 de agosto de 2017): 094101. http://dx.doi.org/10.7567/jjap.56.094101.
Texto completoZhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry". E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.
Texto completoTREW, R. J. y M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (marzo de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Texto completoRibeiro, Vander Alkmin dos Santos, Valesca Donizete de Oliveira, Rero Marques Rubinger, Adhimar Flávio Oliveira y Claudiney Sales Pereira Mendonça. "Síntese, caracterização magnética e elétrica da ferrita de aluminato de cobre". Research, Society and Development 10, n.º 8 (13 de julio de 2021): e31210817314. http://dx.doi.org/10.33448/rsd-v10i8.17314.
Texto completoValentine, Nathan, Diganta Das, Bhanu Sood y Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Texto completoHasan, Md Nazmul, Edward Swinnich y Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Texto completoŠtěpánek, Jan, Luboš Streit y Tomáš Komrska. "Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications". TRANSACTIONS ON ELECTRICAL ENGINEERING 7, n.º 1 (30 de marzo de 2020): 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.
Texto completoChi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze y Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation". Materials 15, n.º 3 (2 de febrero de 2022): 1164. http://dx.doi.org/10.3390/ma15031164.
Texto completoKim, Kyunghun, Hocheon Yoo y Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications". Polymers 14, n.º 14 (21 de julio de 2022): 2960. http://dx.doi.org/10.3390/polym14142960.
Texto completoSilva, Paula Vanessa da, Maria Cleide Azevedo Braz, André Hayato Saguchi, Diego Portes Vieira Leite y Ângela Toshie Araki Yamamoto. "Uso do tanino como fotossensibilizador na terapia fotodinâmica contra Enterococcus faecalis". Research, Society and Development 10, n.º 11 (4 de septiembre de 2021): e370101119440. http://dx.doi.org/10.33448/rsd-v10i11.19440.
Texto completoSetera, Brett y Aristos Christou. "Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics". Electronics 11, n.º 1 (22 de diciembre de 2021): 10. http://dx.doi.org/10.3390/electronics11010010.
Texto completoLin, Chih-Hsuan y Kuei-Ann Wen. "Power Pad Based on Structure Stacking for Ultralow-Power Three-Axis Capacitive Sensing Applications". Journal of Nanoelectronics and Optoelectronics 16, n.º 4 (1 de abril de 2021): 630–41. http://dx.doi.org/10.1166/jno.2021.2982.
Texto completoJensen, Tim y David L. Saums. "Metallic TIM Testing and Selection for Harsh Environment Applications for GaN RF Semiconductors". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (1 de enero de 2016): 000079–86. http://dx.doi.org/10.4071/2016-hitec-79.
Texto completoLu, Yuzheng, Youquan Mi, Junjiao Li, Fenghua Qi, Senlin Yan y Wenjing Dong. "Recent Progress in Semiconductor-Ionic Conductor Nanomaterial as a Membrane for Low-Temperature Solid Oxide Fuel Cells". Nanomaterials 11, n.º 9 (3 de septiembre de 2021): 2290. http://dx.doi.org/10.3390/nano11092290.
Texto completoOstapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov y Sergey Zanegin. "Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures". Inventions 7, n.º 4 (18 de octubre de 2022): 96. http://dx.doi.org/10.3390/inventions7040096.
Texto completoNakayama, Yasuo, Ryohei Tsuruta y Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques". Materials 15, n.º 20 (13 de octubre de 2022): 7119. http://dx.doi.org/10.3390/ma15207119.
Texto completoLi, Zhigang, Xiangke Cui, Xiaowei Wang, Zongpeng Wang, Minghu Fang, Shangshen Feng, Yanping Liu et al. "Plasmon-induced super-semiconductor at room temperature in nanostructured bimetallic arrays". Applied Physics Reviews 9, n.º 2 (junio de 2022): 021412. http://dx.doi.org/10.1063/5.0087808.
Texto completoSchneider, Germar, Thi Quynh Nguyen, Matthias Taubert, Julien Bounouar, Catherine Le-Guet, Andreas Leibold, Helene Richter y Markus Pfeffer. "Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics". Solid State Phenomena 255 (septiembre de 2016): 381–86. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.381.
Texto completoFunaki, Tsuyoshi, Kazuya Kodama, Hitoshi Umezawa y Shinichi Shikata. "Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode". Materials Science Forum 679-680 (marzo de 2011): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.820.
Texto completoLee, Gi-Young, Min-Shin Cho y Rae-Young Kim. "Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors". Electronics 10, n.º 14 (18 de julio de 2021): 1722. http://dx.doi.org/10.3390/electronics10141722.
Texto completoZHANG Shuhong, 张树宏, 云恩学 YUN Peter, 杨涛 YANG Tao, 郝强 HAO Qiang y 王鑫 WANG Xin. "用于原子钟的半导体激光器功率稳定研究". ACTA PHOTONICA SINICA 50, n.º 9 (2021): 0914002. http://dx.doi.org/10.3788/gzxb20215009.0914002.
Texto completoPeng Zhang, Peng Zhang, Teli Dai Teli Dai, Yu Wu Yu Wu, Yanhai Ni Yanhai Ni, Yong Zhou Yong Zhou, Li Qin Li Qin, Yiping Liang Yiping Liang y Siqiang Fan Siqiang Fan. "Substrate-removed semiconductor disk laser with 0.6 W output power". Chinese Optics Letters 10, s1 (2012): S11401–311403. http://dx.doi.org/10.3788/col201210.s11401.
Texto completoRachmady, Willy, James Blackwell, Gilbert Dewey, Mantu Hudait, Marko Radosavljevic, Robert Turkot Jr. y Robert Chau. "Surface Preparation and Passivation of III-V Substrates for Future Ultra-High Speed, Low Power Logic Applications". Solid State Phenomena 145-146 (enero de 2009): 165–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.165.
Texto completoD., Nirmal. "HIGH PERFORMANCE FLEXIBLE NANOPARTICLES BASED ORGANIC ELECTRONICS". December 2019 2019, n.º 02 (24 de diciembre de 2019): 99–106. http://dx.doi.org/10.36548/jei.2019.2.005.
Texto completoVOGLER, THOMAS y DIERK SCHRÖDER. "PHYSICAL MODELING OF POWER SEMICONDUCTORS FOR THE CAE-DESIGN OF POWER ELECTRONIC CIRCUITS". Journal of Circuits, Systems and Computers 05, n.º 03 (septiembre de 1995): 411–28. http://dx.doi.org/10.1142/s0218126695000254.
Texto completoZhou, Dao, Yingzhou Peng, Francesco Iannuzzo, Michael Hartmann y Frede Blaabjerg. "Thermal Mapping of Power Semiconductors in H-Bridge Circuit". Applied Sciences 10, n.º 12 (24 de junio de 2020): 4340. http://dx.doi.org/10.3390/app10124340.
Texto completoGyan, Michael, Joseph Parbby y Francis E. Botchey. "Enhanced Third Generation Semiconductor Material-Based Solar Cell Efficiency by Piezo-Phototronic Effect". 1, n.º 1 (17 de marzo de 2022): 70–76. http://dx.doi.org/10.26565/2312-4334-2022-1-10.
Texto completoMorgan, Adam, Ankan De, Haotao Ke, Xin Zhao, Kasunaidu Vechalapu, Douglas C. Hopkins y Subhashish Bhattacharya. "A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000359–64. http://dx.doi.org/10.4071/isom-2015-wp17.
Texto completoЧэн, Чаншань y Антон Александрович Голянин. "Designing a Cooler With Natural Cold for A 100 kW Semiconductor Power Converter". Bulletin of Science and Practice, n.º 8 (15 de agosto de 2022): 317–24. http://dx.doi.org/10.33619/2414-2948/81/34.
Texto completoYang, Allen Jian, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu et al. "Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors". Nature Electronics 5, n.º 4 (abril de 2022): 233–40. http://dx.doi.org/10.1038/s41928-022-00753-7.
Texto completoMarchat, Clément, James P. Connolly, Jean-Paul Kleider, José Alvarez, Lejo J. Koduvelikulathu y Jean Baptiste Puel. "KPFM surface photovoltage measurement and numerical simulation". EPJ Photovoltaics 10 (2019): 3. http://dx.doi.org/10.1051/epjpv/2019002.
Texto completoBoettcher, Lars, Lars Boettcher, S. Karaszkiewicz, D. Manessis y A. Ostmann. "Embedded Power Modules – A new approach using Power Core and High Power PCB". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (1 de enero de 2015): 000906–37. http://dx.doi.org/10.4071/2015dpc-tp42.
Texto completoHan Jinliang, 韩金樑, 张俊 Zhang Jun, 单肖楠 Shan Xiaonan, 秦莉 Qin Li y 王立军 Wang Lijun. "基于半导体激光合束技术的高功率加热光源". Acta Optica Sinica 41, n.º 22 (2021): 2214001. http://dx.doi.org/10.3788/aos202141.2214001.
Texto completoKim, In Yea, Gi hwan Lim, Chae Yoon Kim, Min-Jeong Lee, Jaehun Kim, Dong Hyun Kim y Jae-Hong Lim. "Fabrication and Characterization of Conductive FeCo@Au Nanowire Alloys for Semiconductor Connector". ECS Meeting Abstracts MA2022-02, n.º 17 (9 de octubre de 2022): 856. http://dx.doi.org/10.1149/ma2022-0217856mtgabs.
Texto completoSamedov, Victor V. "Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry". EPJ Web of Conferences 170 (2018): 01014. http://dx.doi.org/10.1051/epjconf/201817001014.
Texto completoChen, Cheng, Meixiao Wang, Jinxiong Wu, Huixia Fu, Haifeng Yang, Zhen Tian, Teng Tu et al. "Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se". Science Advances 4, n.º 9 (septiembre de 2018): eaat8355. http://dx.doi.org/10.1126/sciadv.aat8355.
Texto completoHagmann, Mark J., Dmitry A. Yarotski y Marwan S. Mousa. "Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope". Microscopy and Microanalysis 23, n.º 2 (20 de diciembre de 2016): 443–48. http://dx.doi.org/10.1017/s1431927616012563.
Texto completoFesenko, Artem, Oleksandr Matiushkin, Oleksandr Husev, Dmitri Vinnikov, Ryszard Strzelecki y Piotr Kołodziejek. "Design and Experimental Validation of a Single-Stage PV String Inverter with Optimal Number of Interleaved Buck-Boost Cells". Energies 14, n.º 9 (25 de abril de 2021): 2448. http://dx.doi.org/10.3390/en14092448.
Texto completoStrandjord, Andrew, Thorsten Teutsch, Axel Scheffler, Bernd Otto, Anna Paat, Oscar Alinabon y Jing Li. "Wafer Level Packaging of Compound Semiconductors". Journal of Microelectronics and Electronic Packaging 7, n.º 3 (1 de julio de 2010): 152–59. http://dx.doi.org/10.4071/imaps.263.
Texto completoSiva Subramanian, S., R. Saravanakumar, Bibhu Prasad Ganthia, S. Kaliappan, Surafel Mustefa Beyan, Maitri Mallick, Monalisa Mohanty y G. Pavithra. "A Comprehensive Examination of Bandgap Semiconductor Switches". Advances in Materials Science and Engineering 2021 (25 de septiembre de 2021): 1–8. http://dx.doi.org/10.1155/2021/3188506.
Texto completoKizilyalli, Isik C., Olga Blum Spahn y Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Transactions 109, n.º 8 (30 de septiembre de 2022): 3–12. http://dx.doi.org/10.1149/10908.0003ecst.
Texto completoGarkavenko, A. S., V. A. Mokritsky, O. V. Maslov y A. V. Sokolov. "Nature of Degradation in Semiconductor Lasers with Electronic Energy Pumping. Theoretical Background". Science & Technique 19, n.º 4 (5 de agosto de 2020): 311–19. http://dx.doi.org/10.21122/2227-1031-2020-19-4-311-319.
Texto completoKizilyalli, Isik C., Olga Blum Spahn y Eric P. Carlson. "(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future". ECS Meeting Abstracts MA2022-02, n.º 37 (9 de octubre de 2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.
Texto completoHenning, Stephan W., Luke Jenkins, Sidni Hale, Christopher G. Wilson, John Tennant, Justin Moses, Mike Palmer y Robert N. Dean. "Manual Assembly of 400um Bumped-Die GaN Power Semiconductor Devices". International Symposium on Microelectronics 2012, n.º 1 (1 de enero de 2012): 000514–23. http://dx.doi.org/10.4071/isom-2012-poster_hale.
Texto completoChromy, Stephan, Kai Rathjen, Sebastian Fahlbusch, Klaus F. Hoffmann y Stefan Dickmann. "Influence of an Electrically Non-Conducting Heat Sink for Power Semiconductors on Radiated Interferences". Advances in Radio Science 16 (4 de septiembre de 2018): 117–22. http://dx.doi.org/10.5194/ars-16-117-2018.
Texto completoBRATANOVSKII, Sergei, Yerdos AMANKULOV y Ilya MEDVEDEV. "MULTI-POINTED FIELD-EMISSION CATHODE AS A GENERATOR OF HIGHFREQUENCY OSCILLATIONS". Periódico Tchê Química 17, n.º 36 (20 de diciembre de 2020): 542–53. http://dx.doi.org/10.52571/ptq.v17.n36.2020.557_periodico36_pgs_542_553.pdf.
Texto completoRoccaforte, Fabrizio, Giuseppe Greco, Patrick Fiorenza y Ferdinando Iucolano. "An Overview of Normally-Off GaN-Based High Electron Mobility Transistors". Materials 12, n.º 10 (15 de mayo de 2019): 1599. http://dx.doi.org/10.3390/ma12101599.
Texto completoPlesca, Adrian. "Thermal Analysis of Power Semiconductor Device in Steady-State Conditions". Energies 13, n.º 1 (24 de diciembre de 2019): 103. http://dx.doi.org/10.3390/en13010103.
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