Tesis sobre el tema "Power semicondutor"
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Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /". Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.
Texto completoSankin, Igor. "Edge termination and RESURF technology in power silicon carbide devices". Diss., Mississippi State : Mississippi State University, 2006. http://library.msstate.edu/etd/show.asp?etd=etd-12162005-141206.
Texto completoHuang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.
Texto completoYen, Chi-min 1949. "Two-dimensional simulation of power MOSFET near breakdown". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276695.
Texto completoProsyk, Kelvin. "Power and spectral characterization of InGaAsP-InP multi-quantum well lasers". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0008/NQ42759.pdf.
Texto completoElliott, Stella N. "High power semiconductor lasers". Thesis, Cardiff University, 2010. http://orca.cf.ac.uk/54136/.
Texto completoWang, Haihong. "Advanced transport models development for deep submicron low power CMOS device design /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Texto completoLinewih, Handoko y h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET". Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.
Texto completoLinewih, Handoko. "Design and Application of SiC Power MOSFET". Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.
Texto completoThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
Full Text
Hinchley, David Alistair. "Large area power semiconductor devices". Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627019.
Texto completoStark, Bernard Harry. "Multiple-mode power semiconductor devices". Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621596.
Texto completoBurg, Tristan Kevin Materials Science & Engineering Faculty of Science UNSW. "Semiconducting properties of polycrystalline titanium dioxide". Publisher:University of New South Wales. Materials Science & Engineering, 2008. http://handle.unsw.edu.au/1959.4/41262.
Texto completoHastie, Jennifer E. "High power surface emitting semiconductor lasers". Thesis, University of Strathclyde, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.399721.
Texto completoLuo, F. L. "Digital control of power semiconductor converters". Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383314.
Texto completoLu, Bin Ph D. Massachusetts Institute of Technology. "AlGaN/GaN-based power semiconductor switches". Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/82354.
Texto completoCataloged from PDF version of thesis.
Includes bibliographical references (p. 209-219).
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers also reduces device cost and makes them easier for wide market adoption. However, the development of AlGaN/GaN-based power switches has encountered three major obstacles: the limited breakdown voltage of AlGaN/GaN transistors grown on Si substrates; the low performance of normally-off AlGaN/GaN transistors; and the degradation of device performance under high voltage pulsed conditions. This thesis studies these issues and presents new approaches to address these obstacles. The first part of the thesis studies the breakdown mechanism in AlGaN/GaN-on-Si transistors. A new quantitative model-trap-limited space-charge impact-ionization model- is developed. Based on this model, a set of design rules is proposed to improve the breakdown voltage of AlGaN/GaN-on-Si transistors. New technologies have also been demonstrated to increase the breakdown voltage of AlGaN/GaN-on-Si transistors beyond 1500 V. The second part of the thesis presents three technologies to improve the performance of normally-off AlGaN/GaN transistors. First, a dual-gate normally-off MISFET achieved high threshold voltage, high current and high breakdown voltage simultaneously by using an integrated cascode structure. Second, a tri-gate AlGaN/GaN MISFET demonstrated the highest current on/off ratio in normally-off GaN transistors with the enhanced electrostatic control from a tri-gate structure. Finally, a new etch-stop barrier structure is designed to address low channel mobility, high interface density and non-uniformity issues associated with the conventional gate recess technology. Using this new structure, normally-off MISFETs demonstrated high uniformity, steep sub-threshold slope and a record channel effective mobility. The thesis concludes with a new dynamic on-resistance measurement technique. With this method, the hard- and soft-switching characteristics of GaN transistors were measured for the first time.
by Bin Lu.
Ph.D.
Spulber, Oana. "Advanced trench gated power semiconductor devices". Thesis, De Montfort University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.678834.
Texto completoUnni, Vineet. "Next-generation GaN power semiconductor devices". Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/11984/.
Texto completoShea, Patrick Michael. "Lateral power MOSFETs hardened against single event radiation effects". Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4705.
Texto completoID: 030646200; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2011.; Includes bibliographical references (p. 161-166).
Ph.D.
Doctorate
Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
Wang, Jue. "Silicon carbide power devices". Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/579.
Texto completoZhang, Xiaohu. "Failure mechanisms in wideband semiconductor power devices". College Park, Md. : University of Maryland, 2006. http://hdl.handle.net/1903/3653.
Texto completoThesis research directed by: Mechanical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Fletcher, R. G. "Power semiconductor devices in A.C. circuit protection". Thesis, Imperial College London, 1987. http://hdl.handle.net/10044/1/7921.
Texto completoKhanniche, M. S. "Phase change cooling of power semiconductor devices". Thesis, Swansea University, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.669698.
Texto completoRobinson, Francis Victor Place. "The control of power semiconductor device switching". Thesis, Heriot-Watt University, 1992. http://hdl.handle.net/10399/1438.
Texto completoCharboneau, Bryan Charles. "Double-Sided Liquid Cooling for Power Semiconductor Devices Using Embedded Power Technology". Thesis, Virginia Tech, 2005. http://hdl.handle.net/10919/31907.
Texto completoThe objective of this work was to identify the potential of implementing embedded power packaging with double-sided forced liquid convection. Physics based, electro-thermal models were first used to predict the improvement in heat transfer of double-sided, forced liquid convection with embedded power packaging over single-sided liquid cooled wire bond based packaging. A liquid module test bed was designed and constructed based on the electro-thermal models, which could be interfaced with high power MOSFET based samples implementing various packaging technologies. Experiments were used to verify the model predictions and identify practical limitations of high flow rate, double-sided liquid cooling with embedded power. An improvement of 45% to 60% in total junction to case thermal resistance is shown for embedded power packaging with double-sided liquid cooling for water flow rates between 0.25 and 4.5 gal/min.
Master of Science
Wang, Hongfang. "Investigation of Power Semiconductor Devices for High Frequency High Density Power Converters". Diss., Virginia Tech, 2007. http://hdl.handle.net/10919/27517.
Texto completoPh. D.
Sirajullah, Zahed. "The power of Japanese industrial policy concerning semiconductors". Thesis, Boston University, 1997. https://hdl.handle.net/2144/27773.
Texto completoPLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.
2031-01-02
Wilson, Susan Lynn. "High power grating-outcoupled surface-emitting semiconductor laser". Ann Arbor, Mich. : ProQuest, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3214770.
Texto completoTitle from PDF title page (viewed July 20, 2007). Source: Dissertation Abstracts International, Volume: 67-04, Section: B, page: 2165. Adviser: Gary Evans. Includes bibliographical references.
Kim, Kyungbum. "ALL-SEMICONDUCTOR HIGH POWER MODE-LOCKED LASER SYSTEM". Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2482.
Texto completoPh.D.
Optics and Photonics
Optics
Scahill, Charlanne Mary. "Design of high power, single frequency semiconductor lasers". Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624851.
Texto completoPusino, Vincenzo. "High power, high frequency mode-locked semiconductor lasers". Thesis, University of Glasgow, 2014. http://theses.gla.ac.uk/5174/.
Texto completoMing, Ranick Ng Kian. "Three dimensional RESURF effect in power semiconductor devices". Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/272010.
Texto completoNunnally, Clay. "Magnetoresistance in semiconductor-metal hybrids for power applications". Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5614.
Texto completoThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on June 11, 2009) Vita. Includes bibliographical references.
Tallarico, Andrea Natale <1988>. "Characterization and Modeling of Semiconductor Power Devices Reliability". Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amsdottorato.unibo.it/7990/1/Tallarico_PhD_Thesis.pdf.
Texto completoChoi, Kyu-Won. "Hierarchical power optimization for ultra low-power digital systems". Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180111/unrestricted/choi%5Fkyu-won%5F200312%5Fphd.pdf.
Texto completoGazzoni, Jean Carlos. "Comparação de perdas em semicondutores em inversores ZCZVT". Universidade Tecnológica Federal do Paraná, 2011. http://repositorio.utfpr.edu.br/jspui/handle/1/227.
Texto completoEste trabalho apresenta um estudo comparativo de perdas em semicondutores empregados em diferentes técnicas de comutação suave aplicadas a inversores alimentados em tensão para aplicações industriais. As técnicas a serem avaliadas são as de transição sob corrente e tensão nulas simultaneamente, conhecida como ZCZVT (Zero-Current and Zero-Voltage Transition). Para que possa ser realizada uma comparação de forma justa, é proposta uma metodologia de projeto do circuito auxiliar para os inversores ZCZVT com circuito auxiliar ressonante e ZCZVT com circuito auxiliar não ressonante, de tal forma que todos os Transistores Bipolares de Porta Isolada (Insulated Gate Bipolar Transistors – IGBTs) assistidos por estes circuitos de auxílio à comutação tenham condições de comutação semelhantes, i.e., comutem sob taxas de variação de tensão e corrente semelhantes. Para tanto, esta metodologia baseia-se nas restrições dinâmicas apresentadas pelos IGBTs em condições de comutação sob corrente e tensão nulas. A partir desta metodologia, tendo sido asseguradas as condições ideais de comutação para todos os IGBTs da ponte monofásica, desenvolveu-se um estudo comparativo dos esforços, perdas e limitações de cada um dos circuitos auxiliares (ressonante e não ressonante). As simulações dos inversores com a tecnologia de transistores IGBTs disponíveis no mercado serviu de base para a montagem de protótipos. Os protótipos são implementados através de um circuito de teste onde a estratégia de chaveamento dos dispositivos semicondutores é elaborada por meio de dispositivos lógicos programáveis de FPGA. Após a aquisição de dados experimentais, os mesmos são comparados com as simulações realizadas a fim de se determinar os reais benefícios e limitações de um inversor em relação ao outro.
This work presents a comparative study of semiconductor losses applied to Voltage Source Inverter - VSI for industrial drives applications with different soft-switching techniques. The evaluated techniques are Zero Current Zero Voltage Transition Inverters, known as ZCZVT. In order to make a fair comparison of them, it is proposed a unified design methodology for the auxiliary circuit of both ZCZVT inverters, with on-resonant auxiliary circuit, in such a way that all the IGBTs transistors assisted by theses auxiliary circuits have similar switching conditions, i.e., similar dv/dt and di/dt during transitions between the switches on and off states. Therefore, this methodology is based on the main physical constrains showed by IGBTs operating under switching conditions. By means of this methodology, the ideal conditions of switching for all IGBTs of the single phase bridge have being assured. Additionally, it was developed a comparative study of the stresses, losses and limitations of each one of the auxiliary circuits (resonant and non-resonant). The simulations of the inverters with some important IGBT technologies available on the market served as the basis to assembly the laboratory prototypes. The prototypes are implemented by a circuit under test with the switching strategy is developed using Field Programmable Gate Array - FPGA. After the experimental data acquisition, the results are compared with the simulations carried out in order to determine actual benefits and limitations of each inverter.
Shea, Patrick. "DESIGN AND MODELING OF RADIATION HARDENED LDMOSFET FOR SPACE CRAFT POWER SYSTEMS". Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2822.
Texto completoM.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering MSEE
Yatim, Abdul Halim bin Mohamed. "A microprocessor controlled three-phase insulated gate transistor PWM inverter drive". Thesis, University of Bradford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292639.
Texto completoZhang, Yaping. "High-power, high-brightness laser diodes with distributed phase correction". Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246369.
Texto completoGuan, Lingpeng. "Novel low voltage power semiconductor devices and IC technologies /". View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ECED%202006%20GUAN.
Texto completoHoban, Peter Thomas. "The transient electrical performance of high power semiconductor devices". Thesis, Staffordshire University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.242620.
Texto completoMacLean, Alexander James. "Power scaling and wavelength control of semiconductor disk lasers". Thesis, University of Strathclyde, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.487871.
Texto completoHuang, S. "Advanced high power semiconductor devices based on trench technology". Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604696.
Texto completoFinney, Stephen Jon. "The reduction of switching losses in power semiconductor devices". Thesis, Heriot-Watt University, 1994. http://hdl.handle.net/10399/1345.
Texto completoLee, Shinwook. "HIGH POWER MODE-LOCKED SEMICONDUCTOR LASERS AND THEIR APPLICATIONS". Doctoral diss., University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3195.
Texto completoPh.D.
Optics and Photonics
Optics and Photonics
Optics PhD
Law, Victor John. "Radio frequency plasma power spectroscopy for semiconductor device processing". Thesis, University of Ulster, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.413866.
Texto completoZeng, Guang. "Some aspects in lifetime prediction of power semiconductor devices". Universitätsverlag Chemnitz, 2018. https://monarch.qucosa.de/id/qucosa%3A34891.
Texto completoLeistungselektronik, welche direkt relevant für die Erzeugung, Umwandlung, Übertragung und Nutzung elektrischer Energie ist, ist eine Schlüsseltechnologie für das Wohl der Menschen. Mit der Entwicklung von Technologien steigen die Anforderungen an die Zuverlässigkeit leistungselektronischer Systeme. Der Langzeitbetrieb unter rauen Umgebungsbedingungen geht häufig mit einer höheren Schaltfrequenz und einer höheren Leistungsdichte einher. Um eine zuverlässige und nachhaltige Operation der leistungselektronischen Systeme zu ermöglichen, ist die genaue Lebensdauerabschätzung der Halbleiter-Leistungsbauelemente von großer Bedeutung. Diese Arbeit befasst sich mit einigen Aspekten der Lebensdauerabschätzung von den Halbleiter-Leistungsbauelementen. Unterschied in der Temperaturabstimmung der Halbleiter-Leistungsbauelemente wird anhand von Berechnung, Simulation und Messung veranschaulicht. Darüber hinaus bietet die Temperaturberechnung im Frequenzbereich Vorteile bei der Anwendung mit mehreren hundert Bauelementen. Darüber hinaus wurden verschiedene Regelstrategien im Lastwechseltest verglichen. Die lineare kumulative Alterungstheorie wurde unter Verwendung des Lastwechseltests validiert. Für das in der MMC-HGÜ-Anwendung verwendete Hochleistungs-IGBT-Modul wurden Alterungsprozesse bei 50 Hz Erwärmung untersucht. Für das Diskrete-Gehäuse wird das erste Lebensdauermodell vorgestellt, welches ein vergleichbares Anwendungsbereich wie das Lebensdauermodell von Leistungsmodulen hat.
Kozak, Joseph Peter. "Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices". Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/104874.
Texto completoDoctor of Philosophy
Power conversion technology is being integrated into industrial and commercial applications with the increased use of laptops, server centers, electric vehicles, and solar and wind energy generation. Each of these converters requires the power semiconductor devices to convert energy reliably and safely. textcolor{black}{Silicon has been the primary material for these devices; however,} new devices have been commercialized from both silicon carbide (SiC) and gallium nitride (GaN) materials. Although these devices are required to undergo qualification testing, the standards were developed for silicon technology. The performance of these new devices offers many additional benefits such as physically smaller dimensions, greater power conversion efficiency, and higher thermal operating capabilities. To facilitate the increased integration of these devices into industrial applications, greater robustness and reliability analyses are required to supplement the traditional tests. The work presented here provides two new experimental methodologies to test the robustness of both SiC and GaN power transistors. These methodologies are oriented around hard-switching environments where both high voltage biases and high conduction current exist and stress the intrinsic semiconductor properties. Experimental evaluations were conducted of both material technologies where the electrical properties were monitored over time to identify any degradation effects. Additional analyses were conducted to determine the physics-oriented failure mechanisms. This work provides insight into the limitations of these semiconductor devices for both device designers and manufacturers as well as power electronic system designers.
Chakrabarti, Abhimanyu. "Transmission line matrix modelling for semiconductor transport". Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338228.
Texto completoChen, Wei. "Fast switching low power loss devices for high voltage integrated circuits". Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.262863.
Texto completoWalker, Philip. "Electrical and thermal modelling of power semiconductor devices using numerical methods". Thesis, University of Liverpool, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237525.
Texto completo