Literatura académica sobre el tema "Power semicondutor"
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Artículos de revistas sobre el tema "Power semicondutor"
Arif, M. S., S. M. Ayob y Z. Salam. "Asymmetrical Nine-Level Inverter Topology with Reduce Power Semicondutor Devices". TELKOMNIKA (Telecommunication Computing Electronics and Control) 16, n.º 1 (1 de febrero de 2018): 38. http://dx.doi.org/10.12928/telkomnika.v16i1.8520.
Texto completoZhang Dongyun, 张冬云, 谢印开 Xie Yinkai, 李丛洋 Li Congyang, 曹玄扬 Cao Xuanyang y 徐仰立 Xu Yangli. "Simulation and Optimization of High Power Semicondutor Laser Microchannel Heat Sink". Chinese Journal of Lasers 44, n.º 2 (2017): 0202008. http://dx.doi.org/10.3788/cjl201744.0202008.
Texto completoChiu, Yu Sheng, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis y Edward Yi Chang. "Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications". Japanese Journal of Applied Physics 56, n.º 9 (24 de agosto de 2017): 094101. http://dx.doi.org/10.7567/jjap.56.094101.
Texto completoZhang, Yuqian. "The Application of Third Generation Semiconductor in Power Industry". E3S Web of Conferences 198 (2020): 04011. http://dx.doi.org/10.1051/e3sconf/202019804011.
Texto completoTREW, R. J. y M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 06, n.º 01 (marzo de 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Texto completoRibeiro, Vander Alkmin dos Santos, Valesca Donizete de Oliveira, Rero Marques Rubinger, Adhimar Flávio Oliveira y Claudiney Sales Pereira Mendonça. "Síntese, caracterização magnética e elétrica da ferrita de aluminato de cobre". Research, Society and Development 10, n.º 8 (13 de julio de 2021): e31210817314. http://dx.doi.org/10.33448/rsd-v10i8.17314.
Texto completoValentine, Nathan, Diganta Das, Bhanu Sood y Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Texto completoHasan, Md Nazmul, Edward Swinnich y Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Texto completoŠtěpánek, Jan, Luboš Streit y Tomáš Komrska. "Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications". TRANSACTIONS ON ELECTRICAL ENGINEERING 7, n.º 1 (30 de marzo de 2020): 10–13. http://dx.doi.org/10.14311/tee.2018.1.010.
Texto completoChi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze y Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation". Materials 15, n.º 3 (2 de febrero de 2022): 1164. http://dx.doi.org/10.3390/ma15031164.
Texto completoTesis sobre el tema "Power semicondutor"
Ma, Cliff Liewei. "Modeling of bipolar power semiconductor devices /". Thesis, Connect to this title online; UW restricted, 1994. http://hdl.handle.net/1773/6046.
Texto completoSankin, Igor. "Edge termination and RESURF technology in power silicon carbide devices". Diss., Mississippi State : Mississippi State University, 2006. http://library.msstate.edu/etd/show.asp?etd=etd-12162005-141206.
Texto completoHuang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.
Texto completoYen, Chi-min 1949. "Two-dimensional simulation of power MOSFET near breakdown". Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276695.
Texto completoProsyk, Kelvin. "Power and spectral characterization of InGaAsP-InP multi-quantum well lasers". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0008/NQ42759.pdf.
Texto completoElliott, Stella N. "High power semiconductor lasers". Thesis, Cardiff University, 2010. http://orca.cf.ac.uk/54136/.
Texto completoWang, Haihong. "Advanced transport models development for deep submicron low power CMOS device design /". Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.
Texto completoLinewih, Handoko y h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET". Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.
Texto completoLinewih, Handoko. "Design and Application of SiC Power MOSFET". Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.
Texto completoThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Microelectronic Engineering
Full Text
Hinchley, David Alistair. "Large area power semiconductor devices". Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627019.
Texto completoLibros sobre el tema "Power semicondutor"
International, Semiconductor Data, ed. Power modules. Rolling Hills Estates, CA: SDI, 1990.
Buscar texto completoDace, Andrea. Power management: IC components. Norwalk, CT: Business Communications Co., 1999.
Buscar texto completoBaliga, B. Jayant. Modern power devices. Malabar, Fla: Krieger, 1992.
Buscar texto completoBaliga, B. Jayant. Modern power devices. New York: Wiley, 1987.
Buscar texto completoBaliga, B. Jayant. Modern power devices. New York: Wiley, 1987.
Buscar texto completoLinder, Stefan. Power semiconductors. Lausanne, Switzerland: EPFL Press, 2006.
Buscar texto completoRectifier, International. Power semiconductors. El Segundo, CA: International Rectifier, 1990.
Buscar texto completoHoft, R. G. Semiconductor power electronics. Malabar, Fla: Krieger, 1991.
Buscar texto completoHoft, Richard G. Semiconductor Power Electronics. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-011-7015-4.
Texto completoLutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann y Rik De Doncker. Semiconductor Power Devices. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8.
Texto completoCapítulos de libros sobre el tema "Power semicondutor"
Bradley, D. A. "Power semiconductors". En Power Electronics, 1–38. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4899-3039-2_1.
Texto completoLutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann y Rik De Doncker. "Semiconductor Properties". En Semiconductor Power Devices, 21–99. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_2.
Texto completoLutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann y Rik De Doncker. "Semiconductor Properties". En Semiconductor Power Devices, 17–75. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-11125-9_2.
Texto completoBose, Bimal K. "Power Semiconductor Devices". En Modern Electrical Drives, 239–70. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-015-9387-8_11.
Texto completoPorst, A. "Power Semiconductor Devices". En Silicon, 293–339. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09897-4_15.
Texto completoHeumann, Klemens. "Power Semiconductor Devices". En Basic Principles of Power Electronics, 13–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82674-0_3.
Texto completoMa, Dongsheng y Rajdeep Bondade. "Power Semiconductor Devices". En Reconfigurable Switched-Capacitor Power Converters, 23–39. New York, NY: Springer New York, 2012. http://dx.doi.org/10.1007/978-1-4614-4187-8_2.
Texto completoGupta, K. M. y Nishu Gupta. "Power Semiconductor Devices". En Advanced Semiconducting Materials and Devices, 415–42. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_12.
Texto completoNeacșu, Dorin O. "Power Semiconductor Devices". En Telecom Power Systems, 23–44. Boca Raton: CRC Press, 2017. http://dx.doi.org/10.4324/9781315104140-2.
Texto completoYngvesson, Sigfrid. "Power-Combining". En Microwave Semiconductor Devices, 183–206. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3970-4_7.
Texto completoActas de conferencias sobre el tema "Power semicondutor"
Jacob, Peter, Albert Kunz y Giovanni Nicoletti. "A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices". En ISTFA 2011. ASM International, 2011. http://dx.doi.org/10.31399/asm.cp.istfa2011p0419.
Texto completoTsai, Chin-Yi, Chih-Hsiung Chen, Tien-Li Sung y Chin-Yao Tsai. "Effects of P-Doping on the Hot-Electron Cooling in Semiconductor Lasers: Phonon Bath Sharing and Electron-Hole Starring". En The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctui52.
Texto completoSoto-Crespo, J., E. M. Wright, G. I. Stegeman, S. Wabnitz y S. Trillo. "Pulse switching in active semiconductor nonlinear directional couplers". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.wv3.
Texto completoBjorkholm, J. E., L. Eichner, J. C. White, R. E. Howard y H. G. Craighead. "Direct-writing in self-developing resists using low-power, cw, ultraviolet light". En Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.mb6.
Texto completoMiller, A. y R. J. Manning. "Transient Optical Nonlinearities in Multiple Quantum Well Structures: Four Wave Mixing, Anisotropic Carrier Diffusion and the Quantum Confined Stark Effect". En Nonlinear Optical Properties of Materials. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tub3.
Texto completoWang, Peng, Michael Manno y Avram Bar-Cohen. "Quantum-Well Si/SiC Self-Cooling for Thermal Management of High Heat Flux GaN HEMT Semiconductor Devices". En ASME 2012 Third International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/mnhmt2012-75290.
Texto completoMiller, D. A. B. "Physics and Applications of Quantum Wells in Optics". En Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.
Texto completoKarchnak, Martin Francis. "High Power Semiconductor Switching". En Power Systems Conference. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2006. http://dx.doi.org/10.4271/2006-01-3033.
Texto completoDepatie, David. "Coherent Semiconductor Laser Sources". En Coherent Laser Radar. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/clr.1991.md2.
Texto completoFigueroa, L., C. Morrison y L. Zinkiewicz. "High Power Semiconductor Lasers". En Cambridge Symposium-Fiber/LASE '86, editado por Elliot G. Eichen. SPIE, 1987. http://dx.doi.org/10.1117/12.937677.
Texto completoInformes sobre el tema "Power semicondutor"
Cui, Hong-Liang. Power Semiconductor Simulation. Fort Belvoir, VA: Defense Technical Information Center, marzo de 2001. http://dx.doi.org/10.21236/ada393508.
Texto completoHunt, Will y Remco Zwetsloot. The Chipmakers: U.S. Strengths and Priorities for the High-End Semiconductor Workforce. Center for Security and Emerging Technology, septiembre de 2020. http://dx.doi.org/10.51593/20190035.
Texto completoDas, Sujit, Laura D. Marlino y Kristina O. Armstrong. Wide Bandgap Semiconductor Opportunities in Power Electronics. Office of Scientific and Technical Information (OSTI), enero de 2018. http://dx.doi.org/10.2172/1415915.
Texto completoKrishna, Sanjay y Ralph Dawson. High Power Mid Wave Infrared Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, junio de 2006. http://dx.doi.org/10.21236/ada463489.
Texto completoVenkatraman, Prasad y B. J. Baliga. Fusible Link Technology for Power Semiconductor Devices. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 1991. http://dx.doi.org/10.21236/ada244110.
Texto completoLester, Luke F. High Power Mid-IR Semiconductor Lasers for LADAR. Fort Belvoir, VA: Defense Technical Information Center, noviembre de 2003. http://dx.doi.org/10.21236/ada419059.
Texto completoShakouri, Ali, Nobby Kobayashi, Zhixi Bian, John Bowers, Art Gossard, Arun Majumdar, Rajeev Ram, Tim Sands, Josh Zide y Lon Bell. Metal-Semiconductor Nanocomposites for High Efficiency Thermoelectric Power Generation. Fort Belvoir, VA: Defense Technical Information Center, diciembre de 2013. http://dx.doi.org/10.21236/ada606254.
Texto completoRediker, Robert H. Communications: Fiber-Coupled External-Cavity Semiconductor High-Power Laser. Fort Belvoir, VA: Defense Technical Information Center, agosto de 1992. http://dx.doi.org/10.21236/ada257386.
Texto completoKlimov, Victor. Semiconductor Nanocrystals: Tiny Particles with “Quantum Powers”. Office of Scientific and Technical Information (OSTI), mayo de 2021. http://dx.doi.org/10.2172/1784668.
Texto completoBennett, Brian R. y J. B. Boos. Antimonide-Based Compound Semiconductors for Low-Power Electronics. Fort Belvoir, VA: Defense Technical Information Center, enero de 2013. http://dx.doi.org/10.21236/ada595642.
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