Tesis sobre el tema "Power Electronics Reliability"
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Sadik, Diane-Perle. "On Reliability of SiC Power Devices in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-207763.
Texto completoKiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre.
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Wang, Yun. "Characterization and reliability of Ag nanoparticle sintered joint for power electronics modules". Thesis, University of Nottingham, 2016. http://eprints.nottingham.ac.uk/37296/.
Texto completoLiu, Xingsheng. "Processing and Reliability Assessment of Solder Joint Interconnection for Power Chips". Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/26691.
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Bonyadi, Roozbeh. "Reliability assessment and modelling of power electronic devices for automotive application and design". Thesis, University of Warwick, 2016. http://wrap.warwick.ac.uk/90139/.
Texto completoColmenares, Juan. "Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics". Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.
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Soon, John Long. "Fault-Tolerant Design and Implementation for Non-Isolated Reconfigurable DC/DC Converters". Thesis, The University of Sydney, 2019. http://hdl.handle.net/2123/20266.
Texto completoAdderly, Shawn. "Reviewing Power Outage Trends, Electric Reliability Indices and Smart Grid Funding". ScholarWorks @ UVM, 2016. http://scholarworks.uvm.edu/graddis/531.
Texto completoFarhadi, Mustafa. "Hybrid Energy Storage Implementation in DC and AC Power System for Efficiency, Power Quality and Reliability Improvements". FIU Digital Commons, 2016. http://digitalcommons.fiu.edu/etd/2471.
Texto completoDe, Santi Carlo. "Degradation mechanisms of devices for optoelectronics and power electronics based on Gallium Nitride heterostructures". Doctoral thesis, Università degli studi di Padova, 2014. http://hdl.handle.net/11577/3423670.
Texto completoIl Nitruro di Gallio si sta rapidamente proponendo come un materiale promettente per dispositivi elettronici in vari campi applicativi. Dato che si tratta di un semiconduttore a bandgap diretto, può essere utilizzato per realizzare emettitori di radiazione luminosa altamente efficienti (LED e diodi laser), e la possibilità di realizzare leghe contenenti Alluminio e Indio permette di selezionare la lunghezza d’onda di picco all’interno dell’intervallo UV - verde dello spettro elettromagnetico. Prima che i prodotti finali basati su Nitruro di Gallio possano permeare il mercato internazionale, è necessario garantire che siano abbastanza affidabili da possedere lunghi tempi di vita ai fini di essere considerati da potenziali acquirenti, e che il loro rapporto prestazioni/costi sia superiore rispetto a quello dei dispositivi attualmente presenti nel mercato, almeno per alcune specifiche applicazioni. Lo scopo di questa tesi è analizzare i punti di forza dei materiali composti basati su Nitruro di Gallio tramite caratterizzazione e test affidabilistici su varie strutture differenti (LED, diodi laser, diodi bloccanti, HEMT, GIT, MIS), per comprendere il comportamento del materiale da diversi punti di vista. In questo lavoro viene effettuato uno studio dettagliato del degrado graduale di LED e diodi laser in InGaN sottoposti a stress elettrotermici. lo scopo è di paragonare il comportamento delle due tipologie di dispositivi tramite caratterizzazione elettrica e ottica, elettroluminescenza, mappe di emissione in campo vicino e Deep-Level Transient Spectroscopy (DLTS), in modo da ottenere una comprensione profonda dei meccanismi di degrado che causano il calo di performance dei diodi laser. Un’attenzione particolare è rivolta al ruolo del calo dell’efficienza di iniezione e alla ricombinazione non-radiativa. Il confronto delle cinetiche di degrado e l’analisi del tipo di danno nelle due diverse strutture ha permesso uno studio completo dei meccanismi fisici responsabili del calo delle prestazioni. Il degrado dei dispositivi è stato attribuito ad un aumento della concentrazione di difetti, che ha un forte impatto sulle cinetiche di ricombinazione non-radiativa. L’energia di attivazione del livello profondo rilevato è 0.35 - 0.45 eV. Come effetto dei test di vita accelerata elettrici e termici compiuti su diodi laser blu commerciali basati su InGaN, si è notato che a volte si ha un iniziale calo della corrente di soglia, dovuto all’aumento dell’attivazione del drogante di tipo p, promossa dalla temperatura e dal flusso di portatori minoritari. Per comprendere gli effetti della creazione di difetti, due differenti tipologie di LED blu commerciali basati su InGaN sono stati sottoposti a irraggiamento tramite protoni con un’energia di 3 MeV a varie fluenze (10^11, 10^12 and 10^13 p/cm2). Il processo di degrado è stato caratterizzato tramite misure corrente - tensione (I - V), potenza ottica - corrente (L - I) e capacità - tensione (C - V) combinate, per cercare di comprendere le modifiche indotte dall’irraggiamento e il recupero conseguente all’annealing ad alte temperature (150 ). I dati sperimentali suggeriscono la creazione di centri di ricombinazione non-radiativa vicino o all’interno della regione attiva dei LED, causati dallo spostamento di atomi. Questa ipotesi viene confermata dai risultati dei test di recupero: l’aumento della potenza ottica e la sua correlazione con il recupero della corrente diretta è consistente con l’annealing dei difetti. Parte dell’attività sui transistor ad elevata mobilità elettronica è stata dedicata alla realizzazione di setup di misura che permettessero di utilizzare tecniche di caratterizzazione avanzata. Si sono analizzati i vantaggi e i limiti della metodologia dei transienti di corrente utilizzata per lo studio dei livelli profondi in HEMT basati su GaN, verificando in che modo diverse procedure adottate per la misurazione e l’analisi dei dati possano influenzare i risultati. La scelta dei parametri di misura (come i livelli di tensione utilizzati per indurre l’intrappolamento di carica e monitorare il transiente di corrente e la durata degli impulsi di filling) e della procedura di analisi (il metodo usato per l’estrapolazione delle costanti di tempo dei processi) può influenzare i risultati e può fornire informazioni sulla posizione degli stati trappola responsabili per il calo della corrente. Inoltre, è stato raccolto un database di difetti descritti in più di 60 articoli scientifici sul Nitruro di Gallio e i suoi composti, che può essere utilizzato per ottenere informazioni sulla natura e sull’origine delle trappole negli HEMT in AlGaN/GaN. Utilizzando questa tecnica innovativa e altri test più comuni, sono stati condotti test affidabilistici e di tempo di vita su varie strutture, per ottenere una miglior comprensione delle loro problematiche e dei possibili miglioramenti. Una possibile variazione riguarda la composizione dello stack di gate. Sono stati condotti test di degrado a Vgs = -5 V e valori di Vds crescenti su HEMT in GaN con differenti materiali di gate: Ni/Au/Ni, ITO e Ni/ITO. Ad ogni passo dello stress sono state misurate le caratteristiche elettriche e ottiche dei transistor, per analizzare il processo di degrado. Si è trovato che lo stress causa un degrado permanente del diodo di gate, che consiste in un aumento della corrente di leakage. Questo cambiamento è dovuto alla generazione di cammini conduttivi parassiti, come suggerito dalle misure di elettroluminescenza (EL), e dispositivi basati su ITO hanno mostrato un’affidabilità maggiore. Questi dati sostengono fortemente l’ipotesi che la robustezza è influenzata dai parametri di processo e/o dal materiale di gate, dato che tutti i dispositivi analizzati provengono dallo stesso wafer epitassiale. Oltre a variare il materiale di gate, è possibile aggiungere uno strato di tipo p sotto il gate per ottenere un funzionamento normally-off. Questo cambiamento fornisce un incremento delle performance, ma può dar nascita a fenomeni di trapping particolari. Si è condotta un’accurata analisi dei processi di trapping dipendenti dal tempo e dal campo elettrico che si verificano nei transistor ad iniezione di corrente di gate (GIT) quando vengono sottoposti ad elevate tensioni di drain. I risultati indicano che, anche se i dispositivi non soffrono di cali di corrente per tempi brevi, l’esposizione continua a tensioni di drain elevate può indurre un aumento significativo della resistività in zona lineare (Ron). Il valore originario di Ron può essere recuperato lasciano il dispositivo a riposo. L’analisi della dipendenza dalla temperatura indica che l’energia di attivazione del processo di detrappolamento è pari a 0.47 eV. Tramite una caratterizzazione dell’elettroluminescenza risolta temporalmente, viene mostrato che questo effetto è correlato alla cattura di elettroni nella regione di accesso gate - drain. Questa interpretazione è inoltre confermata dal fatto che l’emissione della carica può essere significativamente accelerata attraverso l’iniezione di lacune dal gate. Un modello del primo ordine è stato sviluppato per spiegare la dipendenza dal tempo del processo di trapping. Utilizzando altre tecniche di caratterizzazione dei livelli profondi, come i transienti di corrente di drain, gli sweep di frequenza di gate e il backgating, in questi dispositivi si sono identificati vari altri stati trappola. Le loro energie di attivazione sono 0.13, 0.14, 0.25, 0.47 e 0.51 eV. Durante i test di vita accelerata di questi dispositivi, si è trovata una variazione dell’ampiezza relativa dei picchi di transconduttanza ben correlata con l’aumento dell’elettroluminescenza. Questo effetto può essere spiegato tramite l’attivazione del drogante p, un fenomeno che si è osservato anche nei diodi laser. Utilizzando una struttura simile, è possibile realizzare diodi capaci di sopportare tensioni inverse molto elevate, rimuovendo la regione di gate e aggiungendo un diodo Schottky (Natural Superjunction). In questo caso, si sono rilevati livelli profondi di energia di attivazione 0.35, 0.36, 0.44 e 0.47 eV. Questi valori sono molto simili a quelli trovati nei GIT, e questo fatto, insieme alla presenza dell’ativazione del drogante p in dispositivi molto differenti tra loro, conferma l’utilità dello studio di differenti strutture basate sullo stesso materiale per ottenere una maggior conoscenza delle sue performance, possibilità e aspetti affidabilistici.
Cao, Xiao. "Optimization of Bonding Geometry for a Planar Power Module to Minimize Thermal Impedance and Thermo-Mechanical Stress". Diss., Virginia Tech, 2011. http://hdl.handle.net/10919/77252.
Texto completoPh. D.
Siraj, Ahmed Shahnewaz. "Impact of Repetitive Short Circuit Transients on the Conducted Electromagnetic Interference of SiC and Si Based Power Devices". Miami University / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=miami1622056294414037.
Texto completoHascoët, Stanislas. "Mise en oeuvre de nouveaux matériaux d’assemblage dans les modules multipuces de puissance (MCM)". Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0123/document.
Texto completoUse of wide band gap chip in the power electronic industry requires an optimization of the close environment (packaging). Indeed, the can often sustain lower temperature than the die, especially the solder that are used to bond the parts of the module. Consequently, new bonding methods are investigated to enhance the performance of the packages. Silver sintering bonding technique is one the most promising. This method allow to bond parts at moderate temperature and the formed joint to operate at very high temperature (until the melting point of silver). This work is focused on the development of this bonding technique in the case of bonding a dies on a substrate. A study of the influence of the different parameters on the strength of the formed bond has been done. It revealed a major influence of the finishes of the bonded parts. Bonding on silver finished substrate results in good mechanical strength of the bond even after ageing. Furthermore, no interface issues are observed. However, the most used finish for power electronic is not silver but nickel-gold. Regarding this type of finish, the bond quality depends on the gold thickness, sintering profile and also sintering atmosphere. A solid solution of silver and gold seems to develop on the surface of the substrate, decreasing the section of the silver grains in contact with the substrate. Thus the mechanical strength of the assembly is decreased. This effect should be limited by the gold available for the Au-Ag solid solution growth. When sintering under nitrogen, the diffusion of silver on the gold surface is much lower than under air. Good results have been obtained with these configurations and even after ageing. Adding pressure during the thermal treatment seems also to minimize the phenomenon, probably by increasing the number of silver grains in contact with the substrate surface and so reducing the free surface for Au-Ag layer formation. Those results have been used to build prototypes, one of whom has been electrically tested with success at temperatures up to 300°C
Zhao, Xin. "Reliable clock and power delivery network design for three-dimensional integrated circuits". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45881.
Texto completoJeon, Ham Hee. "Highly efficient linear CMOS power amplifiers for wireless communications". Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/47528.
Texto completoDang, Hongmei. "Nanostructured Semiconductor Device Design in Solar Cells". UKnowledge, 2015. http://uknowledge.uky.edu/ece_etds/77.
Texto completoAtasoy, Halil Ibrahim. "Design And Fabrication Of Rf Mems Switches And Instrumentation For Performance Evaluation". Thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/2/12608831/index.pdf.
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voltages of the membranes, switching time and power handling of the devices. Also, failure and degradation of the switches can be monitored using the time domain setup. For these purposes a time domain setup is constructed. Moreover, failure mechanisms of the RF MEMS devices are investigated and a power electronic circuitry is constructed for the biasing of RF MEMS switches. Advantage of the biasing circuitry over the direct DC biasing is the multi-shape, high voltage output waveform capability. Lifetimes of the RF MEMS devices are investigated under different bias configurations. Finally, for measurement of complicated RF MEMS structures composed of large number of switches, a bias waveform distribution network is constructed where conventional systems are not adequate because of the high voltage levels. By this way, the necessary instrumentation is completed for controlling a large scale RF MEMS system.
Asllani, Besar. "Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI147/document.
Texto completoThe SiC Schottky diode can potentially replace the PiN diode in power appli- cations. As a matter of fact, high blocking voltage, low resistivity as well as temperature independence of the reverse recovery current make this diode ideal for DC/DC power converters. Nevertheless, Schottky diodes meet some reluc- tance before the abundance of PiN Si diodes. Despite the numerous demons- trations of power electronics systems, there are still some reliability aspects to improve. This study focuses on static characteristic in a large temperature range and reliability assessment of repetitive surge test of Schottky and JBS diodes. The measurements of forward and reverse characteristics yielded new models in a wide temperature range. Repetitive surge tests enabled us to com- pare the reliability of experimental and commercial diodes in order to prove the maturity of this technology
Lemenager, Maxime. "Atomic Layer Deposition of thin dielectric films for high density and high reliability integrated capacitors". Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEI085.
Texto completoEnergy storage in embedded systems is still the subject of major R&D efforts as it requires a constant decrease in the volume of electronic components. It appears that the size of the discrete components, such as capacitors, is one of the brakes to the miniaturization of the final devices. Although technologies mainly based on silicon deep etching at the micrometric scale have made considerable progresses, they are now limited in terms of integration density. As a result, Murata IPS is developing a new 3D technology enabling a higher developed surface area. The use of such a matrix requires a MIM stack deposition technique such as ALD which is adapted to high aspect ratios. The aim of this thesis has been thus to integrate the MIM structure into the new 3D matrix while respecting the constraints inherent to the industry in order to give rise to the fifth generation of PICS™ technologies. The first challenge has been the achievement of sufficient step coverage of the films with an industrial equipment. A capacitance density greater than 1µF/mm² using a 10nm alumina film has been demonstrated. It also turns out that the TiN electrodes integration plays an important role on the 3D structure. Indeed, the mechanical stress had to be reduced to ensure the mechanical robustness of the structure, in particular by playing on the NH3 pulse. The metal-dielectric interfaces have also been the subject of an in-depth study where the influence of TiN oxidation during dielectric deposition has been shown and electrically characterized. This study has then led to the integration of an additional barrier material at the interfaces, producing capacitors with a 10-year lifetime under the intended voltage and temperature conditions
Renaud, Antoine. "Modélisations et méthodes numériques pour l’intégration d’une solution de suivi de vieillissement d’un assemblage de puissance". Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0052/document.
Texto completoThis work is part of the french Research National Agency project called "CAPTIF" (meaning"Innovative embedded sensors and software for power electronics devices"). This research project deals with power electronics health monitoring solutions in order to increase electric conversion devices reliability and decrease maintenance costs.Traditionnal reliability models limitations led to a reconsideration of life prediction methodsand mean time to failure as a reliability management tool for power electronics devices.An investigation to develop an approach more representative of failure mechanisms observed in power electronics devices was conducted. Based on ageing mechanisms of power electronics assemblies, an ageing indicator was proposed and used with a modelling methodology to characterise the residual life of a device exposed to thermal loads. The functional link between this ageing indicator and data provided by embedded sensors is approache dusing a numerical design of experiment and a response surface methodology. This modelling process is illustrated by an application to a simplified power assembly
Terrier, Viktor. "North European Power Systems Reliability". Thesis, KTH, Elkraftteknik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-202581.
Texto completoDet nordeuropeiska elsystemet (Sverige, Finland, Norge, Danmark, Estland, Lettland och Litauen) står inför förändringar i sin elproduktion. Den ökande andelen intermittenta kraftkällor, såsom vindkraft, gör produktionen mindre förutsägbar. Avvecklingen av stora anläggningar, av miljö- eller marknadsskäl, leder till en minskning av produktionskapaciteten, medan efterfrågan kan öka, vilket är till nackdel för kraftsystemets tillförlitlighet. Investeringar i sammankopplingar och i nya kraftverk kan göras för att stärka systemet. Utvärdering av tillförlitligheten blir nödvändigt för att bestämma vilka investeringar som behövs. För detta ändamål byggs en modell av kraftsystemet. Kraftsystemet är uppdelat i områden, där efterfrågan, sammankopplingar mellan områden, och intermittent produktion representeras av fördelningsfunktioner; medan konventionella kraftverk antas ha ett två-tillståndsbeteende. Import från länder utanför systemet antas lika med deras installerade kapaciteter, med tanke på att grannländerna alltid kan ge tillräckligt med ström. Modellen bygger på allmänt tillgängliga uppgifter. Modellen används för att generera ett stort antal möjliga tillstånd av systemet i en Monte Carlo-simulering för att uppskatta två tillförlitlighetsindex: risken (LOLP) och storleken (EPNS) av en effektbrist. Eftersom effektbrist är en sällsynt händelse, krävs ett mycket stort antal tester av olika tillstånd i systemet för att uppskatta tillförlitligheten med en tillräcklig konfidensnivå. Därför utnyttjas en för-simulering, kallad ”Importance Sampling”, vilken körs i förväg i syfte att förbättra effektiviteten i simuleringen. Fyra simuleringar körs för de kallare månaderna (januari, februari, mars, november, december) för att testa tillförlitligheten i nuvarande systemet (2015) samt för tre framtidsscenarier (2020, 2025 och 2030). Testerna visar att de nuvarande svagaste områdena (Finland och södra Sverige) också är de som kommer att ställas inför en kärnkraftsavveckling under de kommande åren. De indikerar även att planerade investeringar i sammankopplingar och vindkraft i scenarierna inte är tillräckliga för att bibehålla de nuvarande tillförlitlighetsnivåerna. Om dagens tillförlitlighetsnivåer antas nödvändiga, så inkluderar möjliga lösningar mer flexibel efterfrågan, ökad produktion och/eller fler sammankopplingar.
Santini, Thomas. "Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium". Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEI021/document.
Texto completoRecent years have seen SiC MOSFET reach the industrial market. This type of device is particularly adapted to the design of power electronics equipment with high efficiency and high reliability capable to operate in high ambient temperature. Nevertheless the question of the SiC MOSFET reliability has to be addressed prior to considering the implementation of such devices in an aeronautic application. The failure mechanisms linked to the gate oxide of the SiC MOSFET have for a long time prevented the introduction of the device. In this manuscript we propose to study the reliability of the first generation of SiC MOSFET. First, the mechanism known as the Time–Dependent Dielectric Breakdown is studied through experimental results extracted from literature. Our study shows the successful application of a Weibull law to model the time-to-failure distribution extracted from the accelerated tests. The results show also a significant improvement of the SiC MOSFET structure with respect to this phenomenon. In a second step, the impact of the threshold voltage instability is quantified through accelerated tests known as High Temperature Gate Bias. The collected degradation data are modeled using a non-homogeneous Gamma process. This approach allows taking into account the variability between devices tested under the same conditions. Acceleration factors have been proposed with respect to temperature and gate voltage. Eventually the study delivers a primary estimation of the remaining useful lifetime of the SiC MOSFET in a typical aeronautic application
Samavatian, Vahid. "A Systematic Approach to Reliability Assessment of DC-DC Power Electronic Converters". Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT028.
Texto completoReliable and unceasing exploitation of power electronic converters plays a major part in every application. This PhD thesis comes up with new opened-up reliability assessment frameworks and demonstrates the feasibility of using multistate degraded system analysis and interval analysis as well for attaining much more accuracy in reliability evaluation. Considering self- and coupling degradation effects of the items and assessing reliability in the system level are important issues which are still lacking in the previous studies and the present thesis has made an effort to overcome these problems. The thesis tries to launch two distinct reliability assessment frameworks, namely interval reliability and Multistate degraded system reliability.Interval reliability is capable of introducing an interval useful lifetime for DC-DC power electronic converters in which the self and coupling degradations effects of items have been taken into account. Fundamentally, it is based on the conventional physics of failure reliability assessment. Based on this method, instead of obtaining an inaccurate reliability value, one can attain an interval for the reliability of a global system whose useful lifetime undoubtedly lays between the boundaries. This method is able to consider degradation dependencies and assess multi-component system level reliability but not redundant system. An attempt was made to enhance the conventional reliability framework to reach a systematic approach capable of estimating a reliability assessment considering self and mutual degradation effects and being able to evaluate system-level reliability including redundant system. Multistate degraded system reliability analysis is capable of estimating system-level reliability, while mission profile and physics of failure of the system’s items are taken into account. In addition, the self and mutual degradation effects of items on the operation of the global system have been considered. The multi-state degraded system reliability model exposed to multiple failure processes has been generalized. The operating condition of the global system is defined by a finite number of states. Not only can the proposed framework be employed in determining the reliability of the degraded systems in terms of multi-state functions, but also it can obtain the states of the systems by estimating the system state probabilities.As an application, a DC-DC power electronic system containing three critical items has been studied. In this case study, two power semiconductors, namely IGBT and diode, and a power capacitor have been considered as three degradation processes and their aging effects on the useful lifetime estimation of the power electronic system have been discussed. For having a sense about newly proposed reliability frameworks, a 3000W and 200/400 V conventional DC-DC converter for electric vehicle application exposed to WLTP driving cycle is considered
Wang, Lei. "Fuzzy knowledge based reliability evaluation and its application to power generating system". Thesis, Queen Mary, University of London, 1994. http://qmro.qmul.ac.uk/xmlui/handle/123456789/1741.
Texto completoZhuang, Xing. "A New Reliability Assessment Model for Power Electronic Modules Considering Failure Mechanism Interaction". Thesis, North Dakota State University, 2015. https://hdl.handle.net/10365/27615.
Texto completoDongale, Prasad J. "Equipment condition assessment and its importance in estimation and prediction of power system reliability". Thesis, WIchita State University, 2008. http://hdl.handle.net/10057/2027.
Texto completoThesis (M.S) - Wichita State University, College of Engineering, Dept. of Electrical and Computer Science Engineering
Dongale, Prasad J. Jewell Ward. "Equipment condition assessment and its importance in estimation and prediction of power system reliability". A link to full text of this thesis in SOAR, 2008. http://hdl.handle.net/10057/2027.
Texto completoLoayza, Ramirez Jorge Miguel. "Study and characterization of electrical overstress aggressors on integrated circuits and robustness optimization of electrostatic discharge protection devices". Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI044.
Texto completoThis Ph.D. thesis concerns reliability issues in the microelectronics industry for the most advanced technology nodes. In particular, the Electrical OverStress (EOS) issue is studied. Reducing EOS failures in Integrated Circuits (ICs) is becoming more and more important. However, the EOS topic is very complex and involves many different causes, viewpoints, definitions and approaches. In this context, a complete analysis of the current status of the EOS issue is carried out. Then, the Ph.D. objectives can be defined in a clear way. In particular, robustness increase of on-chip protection structures and IC characterization against EOS-like aggressors are two of the main goals. In order to understand and quantify the behavior of ICs against these aggressors, a dedicated EOS test bench is put in place along with the definition of a characterization methodology. A full characterization and comparison is performed on two different Electro- Static Discharge (ESD) power supply clamps. After identifying the potential weaknesses of the promising Silicon-Controlled Rectifier (SCR) device, a new SCR-based device with a turn-off capability is proposed and studied thanks to 3-D Technology Computer-Aided Design (TCAD)simulation. Triggering and turn-off behaviors are studied, as well as its optimization. Finally, three different approaches are proposed for improving the robustness of the IC onchip protection circuits. They are characterized thanks to the EOS test bench which allows identifying their assets as well as their points of improvement
Dabla, Essi Ahoefa. "Approche bayesienne multiéchelle pour la modélisation de la fiabilité d'un module de puissance en environnement ferroviaire". Thesis, Toulouse, INPT, 2019. http://www.theses.fr/2019INPT0102.
Texto completoThe reliability control of critical electronic components is one of the challenges to be faced by railway stakeholders. IGBT (Insulated Gate Bipolar Transistors) power modules belong to this list of components. They are subject to high stresses corresponding to those encountered in harsh railway environments. The environmental conditions encountered in rail operations and the demanding availability requirements impose high levels of reliability on IGBT. In order to improve their reliability, an evaluation methodology has been developed based on a probabilistic approach and supported by a Bayesian network. For the implementation of the model, several working elements were assembled. First, an original approach called "U-Cycle" was proposed, highlighting in a one-to-one way a system level associated with the train and a component level similar to the IGBT considered simultaneously according to functional and dysfunctional views. In this context, the work led, first, to highlight the mechanisms characterizing, in a top-down logic, the influence of train loading on component stress and, in a bottom-up logic, the dysfunctional impact of the failure at component level on system reliability. In a second step, the results of this analysis led to the implementation of the structure of a Bayesian model whose generic nature allows it to be deployed for the reliable modelling of any type of rail system. The modelling work based on Bayesian networks is used to support the reconciliation between analytical models (failure physics) and data from the use of the elementary component in its operating environment. The model was used to model the reliability of an IGBT in an application framework corresponding to the metro in the city of Chennai, India. The data and expert knowledge collected on the project made it possible to determine the probability tables of the Bayesian network. The probabilistic results of the model have been translated into reliability indicators
Batunlu, Canras. "Thermal characterisation and reliability analysis of power electronic devices in wind and solar energy systems". Thesis, Manchester Metropolitan University, 2016. http://e-space.mmu.ac.uk/617153/.
Texto completoLe, Minh-Nhat Ba. "ADVANCED THERMOSONIC WIRE BONDING USING HIGH FREQUENCY ULTRASONIC POWER: OPTIMIZATION, BONDABILITY, AND RELIABILITY". DigitalCommons@CalPoly, 2009. https://digitalcommons.calpoly.edu/theses/177.
Texto completoQiu, Kaiqing. "Reliability evaluation of power distribution systems considering electric vehicles and distributed generation". Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-287199.
Texto completoNär det mänskliga samhället utvecklas finns det en ökande efterfrågan på el. Reserverna av fossila bränslen på jorden är dock begränsade och kan ta slut inom en överskådlig framtid. Därför undersöks möjligheten att ersätta traditionella fossila bränslen med förnybara energikällor för att lösa den världsomspända energibristen och miljöproblemen. Den första metoden är att använda mer förnybar energi såsom vind- och solenergi och öka andelen distribuerad produktion. En annan metod är att popularisera elfordon på grund av deras miljövänliga och energibesparande egenskaper. Integrationen av distribuerad produktion och elfordon kan dock påverka sätt och planering av kraftsystem i hög grad på flera sätt. Detta kan leda till försämring av elsystemets tillförlitlighet. Eftersom samhällsutvecklingen i hög grad beror på ett säkert och tillförlitligt kraftnät är det viktigt att säkerställa hög tillförlitlighet hos kraftsystem när de är integrerade med förnybara energikällor. Syftet med detta examensarbete är att undersöka tillförlitligheten hos kraftdistributionssystemet efter integrering av distribuerad generation och elfordon. För det första konstrueras den probabilistiska modellen för distribuerad generation och elfordon inklusive olika scenarier. Därefter genomförs en uppsättning tillförlitlighetsanalys baserad på RBTS buss 6-system, där sekventiell Monte-Carlo-simuleringsmetod antas för att uppskatta genomsnittliga återansvarsindex. Den övergripande slutsatsen är att integreringen av distribuerad produktion förbättrar systemets tillförlitlighet genom att leverera kraft till närliggande kunder på öns plats. För elektriska fordon kan korrekt reglering av laddningsbeteendet bidra till att minska försämringen av elsystemets tillförlitlighet i största möjliga utsträckning, och läget Fordon till nät kan även förbättra systemets tillförlitlighet. Dessutom har det elektriska bussens dynamiska laddningsläge ingen ytterligare skada på kraftsystemets tillförlitlighet och har ett lovande perspektiv.
Duvnjak, Zarkovic Sanja. "Security of Electricity Supply in Power Distribution System : Optimization Algorithms for Reliability Centered Distribution System Planning". Licentiate thesis, KTH, Elektroteknisk teori och konstruktion, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-281813.
Texto completoQC 20200925
Kolli, Abdelfatah. "Analyse d’une architecture de puissance dédiée aux modes traction–recharge dans un véhicule électrique. Optimisation de la commande et fonctionnement en mode dégradé". Thesis, Paris 11, 2013. http://www.theses.fr/2013PA112316/document.
Texto completoThis Ph.D. thesis focuses on a novel combination of a frequency converter and an electric machine specially dedicated to traction drive and battery recharging modes of an electric vehicle (EV). This power architecture is composed of a six legs voltage inverter connected to a three-phase open-end winding machine. Chapter II details a quantitative comparison between two industrial power architectures and concludes that the SOFRACI powertrain is a competitive solution in terms of power converter efficiency, drive mechanical performances, and required silicon area.This architecture offers the attractive possibility of combining three important functions: traction and braking, battery charging and connecting the energy storage to a smart grid. In addition, this topology offers several advantages such as various motor feeding possibilities and a high degree of reconfiguration in degraded operating mode. The third and fourth chapters of this thesis concern the optimization of control strategies with regard to two types of faults: firstly the inherent imperfections in the converter itself (non modeled non-linearity and ineffective synchronization of control values) and secondly accidental failures. In the first case, an analysis of the pulse width modulation (PWM) methods enables the creation of a PWM strategy with a very low sensitivity to PWM uncertainties and the non-linear behavior of the power converter.In the second case, in the event of a faulty semiconductor device, it is shown that a hardware reconfiguration is required to enable an emergency traction mode. The sustainability of the traction mode is then examined with respect to the control strategy. This analysis leads to an innovative control structure based on basic and easy to implement solutions. Finally, the degraded mode operation principles have been extended to normal mode operation for the purpose of enhancing the cycle efficiency
Namayantavana, Sanaz. "Reliability Study of SiC-Based Power Electronic Devices in DC-DC Converter Used in Heavy-Duty Electric and Hybrid Vehicles". Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-235192.
Texto completoEn DC-DC-omvandlare används i elektrifierade fordon för att ge ström åt dess lågspänningssystem (ex. 24V) vilket kan omfatta bl.a. inklusive strålkastare, horn, luftkonditioneringssystem, vindrutetorkare, radio etc. Omvandlaren matas från fordonets högspänningsbatteri (ex 650VDC) och överför en relativt hög ef- fekt till lågspänningssystemet. SCANIAs befintliga omvandlare använder sig av kiselbaserade transistorer (Si IGBT), och det finns en avsikt att ersätta omvandlaren med en uppgraderad motsvarighet vid vilken kiselkarbidbaserade transistorer (SiC MOSFET) används istället. SiC-baserade halvledarmaterial erbjuder bl.a. möjlighet till högre switch-frekvenser, högre drifttemperatur och högre spänningstålighet. I denna avhandling utreds tillförlitligheten av SiC-baserade transistorer som används i DC-DC-omvandlare inom elektrifier- ade fordonsbranschen. Undersökningen baseras huvudsakligen på resultat från olika tillförlitlighetstester utförda på både transistor- och omvandlarnivå. För att undersöka och analysera tillförlitligheten hos SiC MOSFET-transistorer har olika felmekanismer såsom nedbrytning av ”gate oxid”-skiktet, högfrekventa biverkningar, etc., presenterats och diskuterats tillsammans med motsvarande testresultat. För jämförelse har man på omvandlarnivå, utrett tillförlitligheten av Scania’s befintliga omvandlare och identifierat dess svaga komponenterna. I denna studie har testresultaten, som tillhandahålls av leverantörer av SiC- MOSFET transistorer, analyserats och jämförts med liknande testresultat som har genomförts på Si-baserade omvandlare. Utöver det utför Scania vissa speci- fika tester som är baserade på egna standardiserade prover, för att försäkra sig om omvandlarens mognad och robusthet. Dessa är relaterade till olika miljöförhållanden, t.ex. hög omgivningstemperatur och hög vibrationsnivå. Testresultaten presenteras och diskuteras i avhandlingen. Genom att jämföra testresultat från olika leverantörer kan man dra slutsatsen att SiC MOSFET-transistorer är effektivare än Si-transistorer. Dessutom visade sig att SiC MOSFET är mer robust och tillförlitlig i applikationer som kräver högre effekter, högre spänningar och högre switching-frekvenser. Den andra generationen av Scania’s DC-DC-omvandlare har visat flera förde- lar över den första generationen; nämligen att den är mer effektiv, lättare, mer kompakt och billigare. Från ett tillförlitlighetsperspektiv har den andra generationen har passerat nästan alla relevanta tester.
Ondo, Ndong Bienvenue. "Onduleurs de tension pour actionneurs électriques : fiabilisation par la séparation des cellules de commutation et reconfiguration". Thesis, Montpellier 2, 2010. http://www.theses.fr/2010MON20097/document.
Texto completoThis manuscript of thesis was written in two parts for the "More Electric Aircraft" program. The first part presents in great detail the context of the thesis that is (i.e) the processes which allow electrifying the most of classic aircraft-systems. In this part, an example of special electromechanical actuator build in the More Electric aircraft program will be presented with meticulous care, in particular its command and supply systems. The second part, more extensive, is devoted to various solutions which improve the reliability of the power-electric systems. With the growth of the electrification of the aircrafts, several solutions of this kind will be multiplicated on board, but today most of these solutions haven't the reliability intended to the aeronautical applications. For the most part, the reliability processes consist in isolating the origins of a breakdown, in order that the system can continue to work in a debased mode. In addition, a system which protects inverter's legs is described; it's a controlled circuit breaker which uses thyristors and fuses (SCTF2). This system of reliability allows electrical isolating of faulty inverter's leg in a three phase inverter. The preferential position of a SCTF2 is the connexion between inverter's leg and the DC bus. Simulations of the SCTF2 are done on PSIM software. For PSIM, this manuscript poposes some approximative modelisations of the components like IGBT and fuse when they are subjected to a dangerous high-current (short-circuit)
Zhang, Teng. "Caractérisations des défauts profonds du SiC et pour l'optimisation des performances des composants haute tension". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI108/document.
Texto completoDue to the increasing appeal to the high voltage, high temperature and high fre-quency applications, Silicon Carbide (SiC) is continuing attracting world’s attention as one of the most competitive candidate for replacing silicon in power electric field. Meanwhile, it is important to characterize the defects in semiconductors and to in-vestigate their influences on power devices since they are directly linked to the car-rier lifetime. Moreover, reliability that is also affected by defects becomes an una-voidable issue now in power electrics. Defects, including point defects and extended defects, can introduce additional energy levels in the bandgap of SiC due to various metallic impurities such as Ti, Fe or intrinsic defects (vacancies, interstitial…) of the cristalline lattice itself. As one of the widely used defect characterization method, Deep Level Transient Spectroscopy (DLTS) is superior in determining the activation energy Ea , capture cross section sigma and defect concentration Nt as well as the defect profile in the depletion region thanks to its diverse testing modes and advanced numerical analysis. Determination of Schottky Barrier Height (SBH) has been confusing for long time. Apart from experimental measurement according to I-V or C-V characteristics, various models from Gaussian distribution of SBH to potential fluctuation model have been put forward. Now it was found that these models are connected with the help of flat-band barrier height Phi_BF . The Richardson plot based on Phi_BF along with the potential fluctuation model becomes a powerful tool for SBH characterization. SBHs with different metal contacts were characterized, and the diodes with multi-barrier are verified by different models. Electron traps in SiC were studied in Schottky and PiN diodes, while hole traps were investigated under strong injection conditions in PiN diodes. 9 electron traps and 4 hole traps have been found in our samples of 4H-SiC. A linear relationship between the extracted Ea and log(sigma) indicates the existence of the intrinsic temper-ature of each defects. However, no obvious difference has been found related to ei-ther barrier inhomogeneity or contact metal. Furthermore, the electron traps near in-terface and fixed positive charges in the oxide layer were investigated on SiC power MOSFETs by High Temperature Gate Bias (HTGB) and Total Ionizing Dose (TID) caused by irradiation. An HTGB-assist-TID model was established in order to ex-plain the synergetic effect
Perkins, Andrew Eugene. "Investigation and Prediction of Solder Joint Reliability for Ceramic Area Array Packages under Thermal Cycling, Power Cycling, and Vibration Environments". Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/14518.
Texto completoMorozovska, Kateryna. "Dynamic Rating of Power Lines and Transformers for Wind Energy Integration". Licentiate thesis, KTH, Elektroteknisk teori och konstruktion, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-226564.
Texto completoQC 20180423
Dynamic Rating for Wind Power
Molin, Quentin. "Contribution à l’étude de la robustesse des MOSFET-SiC haute tension : Dérive de la tension de seuil et tenue aux courts-circuits". Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI111.
Texto completoThis manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks. Others power switches available are still introduced and an introduction to reliability is explaining why such work on this new power switches is important. Transition from Si technologies to SiC ones require a lot of work regarding its robustness. Before showing reliability and robustness results is presented I give a lot of details regarding to the measurement and monitoring of key parameters used in the next chapters. The results of our tests on the threshold voltage instability are presented and how we validated an empirical model on this drift. This was used to propose an enhanced measurement protocol on the threshold voltage. Static and dynamic experimental results presented next will show if the voltage drift during ageing is significant or not. Further analysis is proposed to add more insight on the understanding of the oxide degradation mechanisms through C-V and charge pumping measurements. Finally, the ageing results presented on 1,7 kV SiC MOSFET are focused on the short-circuit and repetitive short-circuit behavior of the same components. Drain to source voltage influence on critical energy during this particular and stressful operation mode is studied. This time, the results are worrying.The last chapter is confidential
Westerlund, Per. "Condition measuring and lifetime modelling of disconnectors, circuit breakers and other electrical power transmission equipment". Doctoral thesis, KTH, Elektroteknisk teori och konstruktion, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-214984.
Texto completoElförsörjningen är viktig i det moderna samhället, så avbrotten bör vara få och korta, särskilt i stamnätet. En kortfattad historik över det svenska elsystemet presenteras. Målet är att kunna planera avbrotten för underhåll bättre genom att veta mera om apparaternas skick. Det är svårt att planera avbrott för underhåll och utbyggnad. Riskmatrisen är verktyg för att välja vad som ska underhållas och den kan förbättras genom att lägga till en dimension, sannolikhetens osäkerhet. Risken kan minskas längs med varje dimension: bättre mätningar, förebyggande underhåll och mer redundans. Antalet dimensioner kan igen bli två genom att följa linjer med samma risk, som är beräknade för betafördelningen. Denna avhandling tar upp tjugo studier av fel i brytare och frånskiljare med data om felorsak och livslängd. Den har också en översikt av ett fyrtiotal olika metoder för tillståndsmätningar för brytare och frånskiljare, som huvudsakligen rör de elektriska kontakterna och de mekaniska delarna. Ett system med IR sensorer har installerats på de nio kontakterna på sex frånskiljare. Målet är att minska antalet avbrott för underhåll genom att skatta skicket när frånskiljarna är i drift. De uppmätta temperaturerna tas emot genom radio och behandlas genom regression mot kvadraten av strömmen, då den bästa exponenten för strömmen visade sig vara 2,0. Förklaringsfaktorn $R^2$ är hög, över 0,9. För varje kontakt ger det en regressionskoefficient. Ju högre koefficienten är, desto mer värme utvecklas det i kontakten, vilket kan leda till skador på materialet. Koefficienterna ger en rangordning av frånskiljarna. Systemet kan också användas för att minska eller öka den tillåtna strömmen baserat på skicket. Slutligen förklaras ett ramverk för livslängdsmodellering och tillståndsmätning. Livslängdsmodellering innebär att koppla en fördelning för tiden till fel med varje delpopulation. Med tillståndsmätning avses att mäta en parameter och skatta dess värde i framtiden. Om den överskrider en tröskel, måste apparaten underhållas. Effekten av underhåll visas för fyra frånskiljare. En utveckling av riskmatrisen med osäkerheten, en sammanställning av statistik och metoder för tillståndsövervakning, ett system med IR-sensor vid kontakerna, en metod för termografiplanering och ett ramverk för livslängdsmodellering och tillståndsmätningar presenteras. De kan förbättra avbrottsplaneringen.
El suministro de energía eléctrica es importante en la sociedad moderna. Por eso los cortes eléctricos deben ser poco frecuentes y de poca duración, sobre todo en la red de transmisión. Esta tesis resume la historia del sistema eléctrico sueco. El objetivo es planificar los cortes mejor siguiendo la condición de los aparatos. La matriz de riesgo se utiliza muchas veces para escoger en qué aparatos debería realizarse mantenimiento. Esta matriz se puede mejorar añadiendo una dimensión: la incertidumbre de la probabilidad. El riesgo puede ser disminuido siguiendo cada una de las tres dimensiones: mejores mediciones, mantenimiento preventivo y mayor redundancia. El número de dimensiones puede reducirse siguiendo líneas del mismo riesgo calculadas para la distribución beta. Esta tesis presenta veinte estudios de fallos en interruptores y seccionadores con datos sobre la causa y el tiempo hasta la avería. Contiene también una visión general de cuarenta métodos para medir la condición de seccionadores e interruptores, aplicables en su mayoría a los contactos eléctricos y los componentes mecánicos. Se ha instalado un sistema con sensores infrarrojos en los seis contactos de nueve seccionadores. El objetivo es disminuir los cortes de servicio para mantenimiento, estimando la condición con el seccionador en servicio. Las temperaturas son transmitidas por radio y se hace una regresión con el cuadrado de la corriente, ya que el mejor exponente de la corriente resultó ser 2,0. $R^2$ alcanza un valor de 0,9 indicando un buen ajuste de los datos por parte del modelo. Existe un coeficiente de regresión para cada contacto y este sirve para ordenar los contactos según la necesidad de mantenimiento, ya que cuanto mayor sea el coeficiente más calor se produce en el contacto. Finalmente se explica que el modelado de tiempo hasta la avería consiste en asignar una distribución estadística a cada equipo. La monitorización del estado consiste en medir y estimar un parámetro y luego predecir su valor en el futuro. Si va a sobrepasar un cierto límite, el equipo necesitará de mantenimiento. Se presenta el efecto de mantenimiento de cuatro seccionadores. Un desarrollo de la matriz de riesgo, un conjunto de estadísticas y métodos de monitoreo de condición, un sistema de sensores IR situados cerca de los contactos, en método de planificación de termografía y un concepto para explicar la modelización de tiempo hasta la avería y de la monitorización de la condición han sido presentados y hace posible una mejor planificación de los cortes de servicio.
QC 20170928
Feuillet, Emilien. "Le procédé de report intermétallique en Phase Liquide Transitoire (TLPB) : du développement du procédé à la caractérisation des assemblages intermétalliques". Thesis, Bordeaux, 2016. http://www.theses.fr/2016BORD0024/document.
Texto completoTo meet the future requirements of power electronics, the packaging technologies of power modules must withstand higher operation temperatures, higher than 200°C. However, an increase of the operation temperatures leads to a significant decrease of the solder joints reliability and thus to the failure of the power modules. That’s why the main objective of this PhD thesis is to develop an alternative bonding technic for high temperature applications: the Transient Liquid Phase Bonding process (TLPB) based on the copper-tin binary system. This process is very attractive because it allows the formation, at low temperature, of a joint entirely composed of intermetallic (IMC) compounds which are well known for their high thermal stability. To optimize the process, the influence of the main bonding parameters on the growth of the IMC phases has been first investigated. The results indicate that the deposition of an IMC diffusion barrier is required to alter the atomic diffusion motion at the interfaces between the Cu substrates and the Sn interlayer and to avoid the formation of large pores along the bond mid-plane. After the development of an innovative and optimal bonding process, the reliability of the IMC assemblies has been investigated through experimental tests and finite element simulations. The IMC joints show a higher thermal cycling reliability than the reference SnAgCu solder alloys. Hence, the IMC bonding process developed during this PhD thesis is an excellent alternative to the soft solder alloys for high temperature applications
Martineau, Donatien. "Caractérisation de l'endommagement de composants électroniques de puissance soumis à des tests de vieillissement accéléré". Thesis, Toulouse, INSA, 2011. http://www.theses.fr/2011ISAT0004/document.
Texto completoIntegration of power electronic devices in automotive applications requires a perfect knowledge of their reliability as these components are subjected to more drastic electrothermal stresses. This study aims at determining the physical mechanisms responsible for degradation and failure of modern MOSFET-based power microprocessors during accelerated and controlled fatigue tests.After a description of the recent developments in power electronics that led to today's SmartMos technology from Freescale Semiconductor, the different microstructural characterizing techniques (SAM, SAT, SEM, SIM, TEM, …) and the specific scale for which they are used are detailed.The accelerated ageing of the components were carried out on a fatigue bench to evaluate the component lifetime according to parameters such as the temperature, current and pulse durations. A complete analysis of failed components showed that the area which is primarily affected by the electro-thermal cycling is the metal source that includes aluminum metallization and connection wires. In controlled ageing tests, we showed that the drain-source resistance (Rdson) increase was due to the metal source resistance augmentation. This phenomenon is linked to the degradation of the Aluminum layer that happens through grains division and crack propagation along the grain boundaries
Parent, Guillaume. "Evaluation de la durée de vie de composants électroniques de puissance commerciaux soumis à plusieurs tests de vieillissement et détermination des mécanismes de défaillance". Phd thesis, Toulouse, INPT, 2017. http://oatao.univ-toulouse.fr/17829/1/Parent_G.pdf.
Texto completoKoziel, Sylvie Evelyne. "From data collection to electric grid performance : How can data analytics support asset management decisions for an efficient transition toward smart grids?" Licentiate thesis, KTH, Elektroteknisk teori och konstruktion, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-292323.
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Raczkowski, Brian Christopher. "Identification of critical lines for power system operational reliability assessment /". 2009. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3363062.
Texto completoSource: Dissertation Abstracts International, Volume: 70-06, Section: B, page: 3699. Includes bibliographical references (leaves 116-123) Available on microfilm from Pro Quest Information and Learning.
Acurio, Méndez Eliana Maribel, Felice Crupi y Lionel Trojman. "Reliability of GaN-based devices for Energy Efficient Power Applications". Thesis, 2019. http://hdl.handle.net/10955/1717.
Texto completoThe wide spectrum of power electronics applications, including their role in renewable energy conversion and energy saving, require the innovation from conventional Silicon (Si) technology into new materials and architectures that allow the fabrication of increasingly lightweight, compact, efficient and reliable devices. However, the trade-off between long lifetime, high performance and low cost in the emerging technologies represents a huge limitation that has gained the attention of different research groups in the last years. Gallium Nitride (GaN) is a wide-bandgap semiconductor (WBGS) that constitutes an excellent candidate for high-power and high-frequency applications due to its remarkable features such as high operating temperature, high dielectric strength, high current density, high switching speed, and low on-resistance. Compared with its Silicon counterpart, GaN is superior in terms of high breakdown field ( 3 MV/cm), exceptional carrier mobility, and power dissipation. By taking into account other WBG materials such as SiC, GaN grown on Si substrates promises similar performance but at a much lower cost in the low to mid power and high-frequency range. Since GaN allows size and weight device reduction due to a better relationship between on-resistance and breakdown voltage, it is suitable for a variety of applications such as RF power amplifiers, power switching systems, sensors, detectors, etc. Especially, in the field of energy efficiency, GaN technology appears as a future successor of Si in power conversion circuits. However, some drawbacks related to technology cost, integration, and long-term reliability have to be overcome for its wide adoption in the power applications market. One of the worst inconveniences of AlGaN/GaN High Electron Mobility Transistors (HEMTs) is the normally-ON operation. Since a two-dimensional electron gas (2DEG) channel is formed at the AlGaN/GaN interface due to inherent material properties, a negative bias has to be applied at the gate to switch the device off. Among the proposed solutions to fabricate normally-OFF devices, the metaloxide/ insulator-semiconductor (MOS/MIS) structure with different insulators has shown remarkable improvements in gate leakage reduction and drain current increase. Also in AlGaN/GaN Schottky Barrier Diodes (SBDs), the introduction of a MOS structure to create a gated edge termination (GET) at the anode area has resulted in significant improvements in reverse diode leakage and forward diode voltage. Nevertheless, the improvement in the device performance by the introduction of a dielectric could seriously affect the device long-term reliability since additional degradation in this layer and at its interfaces with AlGaN or GaN occurs. In the case of conversion systems, power devices are continuously switched from an OFF-state condition at high drain bias to an ON-state condition at large drain current. Therefore, the reliability of GaN-based devices has to be proven for the complete ON/OFF operation. This dissertation focuses on providing a more comprehensive analysis of two main reliability issues related to the dielectric insertion under the gate/anode stacks by analyzing the use of different dielectric materials and device architectures. The first issue is the positive bias temperature instability (PBTI), which is related to the degradation of electrical parameters when high gate voltages and temperatures are applied and is especially observed during the ON-state operation of the transistor. By using MOS-HEMT structures with different gate dielectrics (SiO2, Al2O3, and AlN/Al2O3), the impact of the stress voltage, recovery voltage and temperature on the device reliability is analyzed including the role of oxide traps and the interface states to provide physical insights into this mechanism. The second phenomenon discussed in this thesis is the time-dependent dielectric breakdown (TDDB) observed on GET-SBDs during its OFF-operation. The percolation model and Weibull distribution are used to understand this degradation mechanism. As a result, it has been demonstrated that the time to breakdown tBD is influenced by the GET structure (single vs. double), the passivation thickness, the preclean process at the anode region before the GET dielectric deposition and the capping layer. Finally, by using 2D TCAD simulations, the long-term reliability improvement has been related to the reduction of the electric fie
University of Calabria
"Multi-dimensional load modeling in power system reliability evaluation". Tulane University, 1996.
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Otto, Alexander. "Lebensdauermodellierung diskreter Leistungselektronikbauelemente unter Berücksichtigung überlagerter Lastwechseltests". 2019. https://monarch.qucosa.de/id/qucosa%3A74138.
Texto completoActive power cycling tests represent a standardized and well-established method for reliability evaluation and product qualification in power electronics. They are based on the application of recurring load current pulses, which are converted into cyclic temperature swings in the power component. The thereby induced thermo-mechanical stress, caused by the different material properties of the joining partners involved in the composite system, ultimately leads to the typical failure modes and mechanisms in the devices. However, these conventional tests do not sufficiently stimulate the complex load schemes in field operations in which different load factors occur simultaneously. In the context of the introduction of novel device and package technologies, increasingly harsh environmental operation conditions as well as increasing reliability and functional safety requirements, there is a need for improved reliability test methods. One possible approach is the combination of different load factors in order to increase test efficiency and test coverage. Within the scope of this thesis, systematic reliability investigations, including standard power cycling tests as well as power cycling tests superimposed with passive thermal cycles, were therefore carried out on discrete power components using a self-developed test rig. In addition to the investigation of different junction temperature profiles, a comparison of different component types was performed. On the basis of a qualitative and quantitative test evaluation, load-based lifetime models were derived. It was found that the lifetime models determined on the basis of the standard power cycling tests could not predict the test results of the superimposed power cycling tests. The reason for this was the influence of the temperature-dependent material behaviour of the moulding com-pound, which has an influence on the failure mode wire-bond lift-off. Based on these findings, the use of case-sensitive lifetime models is suggested that are able to take the changed damage physics into account. In addition, a new method for the optical in-situ investigation of moulded power devices is presented, which allows the investigation of thermal-transient as well as thermo-mechanical processes in the package under active loading conditions.:Symbol- und Abkürzungsverzeichnis Danksagung Kurzfassung Abstract 1 Einleitung 1.1 Motivation 1.2 Fokus und Ziel der Arbeit 2 Grundlagen zur Leistungselektronik und zu ihrer Zuverlässigkeitsbewertung 2.1 Aufbau typischer Leistungselektronikkomponenten und Module 2.1.1 Leistungsklassen und klassische Aufbauvarianten 2.1.2 Leistungshalbleiter 2.1.3 Substrattechnologien für Leistungsmodule 2.1.4 Verbindungstechniken in Leistungselektronikmodulen 2.1.4.1 Chipflächen- und Baugruppenkontaktierung 2.1.4.2 Chipanschlusskontaktierung 2.1.4.3 Kühlkörperanbindung 2.1.5 Verkapslungskonzepte 2.1.6 Kühlkonzepte in der Leistungselektronik 2.2 Typische Fehlermodi und -mechanismen 2.3 Lebensdauerbewertung von Leistungselektronik0 2.3.1 Globale Ansätze zur Produktqualifizierung und Zuverlässigkeitsbewertung0 2.3.2 Lebensdauertests in der Leistungselektronik 2.3.2.1 Überblick und Einordnung von Lastwechseltests 2.3.2.2 Testkonzepte und -strategien 2.3.3 Lebensdauermodellierung 3 Neue methodische Ansätze und Prüfstandsentwicklung 3.1 Überlagerung von aktiven Lastwechseln mit passiven Temperaturzyklen 3.2 Entwicklung und Aufbau eines Lastwechselprüfstandes zur Untersuchung von überlagerten Belastungstests 3.2.1 Konzeption 3.2.2 Kühlkörper-Design 3.2.3 Steuer- und Auswertesoftware 3.2.4 Lastwechselteststand 3.2.5 Messprozedur 3.2.6 Validierung der Tvj-basierten Temperaturmessung 3.3 Optisches In-situ-Monitoring während Lastwechseltests 3.3.1 Testaufbau und Probenpräparation 3.3.2 IR-Messungen an angeschliffenem Prüfling 4 Prüfgegenstände, Testplanung und Testdurchführung 4.1 Auswahl und Übersicht der Prüflinge 4.2 Testkonzeption und Versuchsplanung 4.2.1 Lastwechseltests 4.2.2 Temperaturschocktests 4.3 Testaufbau und -durchführung 4.3.1 Lastwechseltests 4.3.2 Temperaturschocktests 5 Testergebnisse 5.1 Messdatenanalyse und Auswerteprozedur 5.2 Statistische Testauswertung 5.2.1 Übersicht über Testergebnisse 5.2.2 Weibull-Verteilungen 5.3 Fehleranalytik 5.3.1 Bonddrahtausfälle 5.3.2 Lotdegradation 5.4 Optische In-situ-Analyse während aktiver Belastung 5.4.1 Methodik 5.4.2 Verschiebungsfelder in Abhängigkeit von ∆Tvj und Tvj,m 5.4.3 Einfluss der Einschaltzeit ton auf Verschiebungsfelder 5.4.4 Ableitung der Dehnungsfelder und Ergebnisdiskussion 6 Lebensdauermodellierung 6.1 Belastungsbasierte Lebensdauermodelle 6.1.1 Lebensdauerdiagramme und -einflussfaktoren 6.1.2 Multiple lineare Regression 6.1.3 Berücksichtigung der effektiven Temperatur T(v)j,eff 6.1.4 Vergleich der Lebensdauermodelle mit überlagerten Testergebnissen 6.1.5 Zusammenfassung 146 6.1.6 Einordnung der ermittelten Lebensdauermodelle 6.2 FE-Analyse zur Validierung der Ergebnisse aus der Lebensdauermodellierung 7 Zusammenfassung und Ausblick Literaturverzeichnis Abbildungsverzeichnis Tabellenverzeichnis
Jian, Bo-Ru y 簡伯儒. "Fault Types Recognition and Reliability Analysis of Electronic Power Meters". Thesis, 2009. http://ndltd.ncl.edu.tw/handle/06575881168361408037.
Texto completo國立高雄應用科技大學
電機工程系
97
This thesis proposes support vector machine(SVM)based pattern recognition technique to classify electronic power meter faults by establishing and comparing with the historical electronic meter fault data. First, this research is to simulates the current use of electronic meters in the historical fault data and to derives the electronic power meter fault models. Moreover, the SVM network model is applied to train the selected electronic power meter fault data set in order to establish the electronic meter fault multi-layer SVM classifier. The fault meters and their corresponding fault type can be analyzed and the subsequent maintenance works can be processed. Besides, function block diagram and fault tree technique are used for reliability analysis to establish of electronic power meters and calculate the largest failure rate as well as the smallest reliability. Furthermore, the possible fault parts and life time of power meters can be justified by using simple calculation steps. Calculation results can be used as a guidance for installing and producing electronic power meters in the future.
Chang, Jui-Hsuan y 張瑞軒. "Aging Evaluation and Reliability Study on Electronic Devices of Printed Circuit Boards in Nuclear Power Plant". Thesis, 2012. http://ndltd.ncl.edu.tw/handle/04925806924824921040.
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