Artículos de revistas: "Polycrystalline semiconductors"

1

Russell, G. J. "Polycrystalline semiconductors". Contemporary Physics 27, n.º 5 (septiembre de 1986): 473–77. http://dx.doi.org/10.1080/00107518608211025.

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2

Kim, Sunjae, Minje Kim, Jihyun Kim y Wan Sik Hwang. "Plasma Nitridation Effect on β-Ga2O3 Semiconductors". Nanomaterials 13, n.º 7 (28 de marzo de 2023): 1199. http://dx.doi.org/10.3390/nano13071199.

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The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics.

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3

Norris, Kate J., Junce Zhang, David M. Fryauf, Elane Coleman, Gary S. Tompa y Nobuhiko P. Kobayashi. "Growth of Polycrystalline Indium Phosphide Nanowires on Copper". MRS Proceedings 1543 (2013): 131–36. http://dx.doi.org/10.1557/opl.2013.933.

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ABSTRACTOur nation discards more than 50% of the total input energy as waste heat in various industrial processes such as metal refining, heat engines, and cooling. If we could harness a small fraction of the waste heat through the use of thermoelectric (TE) devices while satisfying the economic demands of cost versus performance, then TE power generation could bring substantial positive impacts to our society in the forms of reduced carbon emissions and additional energy. To increase the unit-less figure of merit, ZT, single-crystal semiconductor nanowires have been extensively studied as a building block for advanced TE devices because of their predicted large reduction in thermal conductivity and large increase in power factor. In contrast, polycrystalline bulk semiconductors also indicate their potential in improving overall efficiency of thermal-to-electric conversion despite their large number of grain boundaries. To further our goal of developing practical and economical TE devices, we designed a material platform that combines nanowires and polycrystalline semiconductors which are integrated on a metallic surface. We will assess the potential of polycrystalline group III-V compound semiconductor nanowires grown on low-cost copper sheets that have ideal electrical/thermal properties for TE devices. We chose indium phosphide (InP) from group III-V compound semiconductors because of its inherent characteristics of having low surface states density in comparison to others, which is expected to be important for polycrystalline nanowires that contain numerous grain boundaries. Using metal organic chemical vapor deposition (MOCVD) polycrystalline InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. We studied the growth mechanisms of polycrystalline InP nanowires on copper surfaces by analyzing their chemical, optical, and structural properties in comparison to those of single-crystal InP nanowires formed on single-crystal surfaces. We also assessed the potential of polycrystalline InP nanowires on copper surfaces as a TE material by modeling based on finite-element analysis to obtain physical insights of three-dimensional networks made of polycrystalline InP nanowires. Our discussion will focus on the synthesis of polycrystalline InP nanowires on copper surfaces and structural properties of the nanowires analyzed by transmission electron microscopy that provides insight into possible nucleation mechanisms, growth mechanisms, and the nature of grain boundaries of the nanowires.

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4

Ka, O. "Electrical Transport in Polycrystalline Semiconductors". Solid State Phenomena 37-38 (marzo de 1994): 201–12. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.201.

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5

Smith, David A. y C. S. Nichols. "Polycrystalline Semiconductors: Structure-Property Relationships". Solid State Phenomena 51-52 (mayo de 1996): 105–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.105.

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6

TYAGI, B. P. y K. SEN. "Effective mobility of polycrystalline semiconductors". International Journal of Electronics 58, n.º 1 (enero de 1985): 83–89. http://dx.doi.org/10.1080/00207218508939004.

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7

Sharma, R. P., A. K. Shukla, A. K. Kapoor, R. Srivastava y P. C. Mathur. "Hopping conduction in polycrystalline semiconductors". Journal of Applied Physics 57, n.º 6 (15 de marzo de 1985): 2026–29. http://dx.doi.org/10.1063/1.334390.

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8

Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu y S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications". Proceedings, annual meeting, Electron Microscopy Society of America 50, n.º 2 (agosto de 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

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9

CAMPBELL, I. H. y D. L. SMITH. "ELECTRICAL TRANSPORT IN ORGANIC SEMICONDUCTORS". International Journal of High Speed Electronics and Systems 11, n.º 02 (junio de 2001): 585–615. http://dx.doi.org/10.1142/s0129156401000952.

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Organic semiconductors have processing and performance advantages for low cost and/or large area applications that have led to their rapid commercialization. Organic semiconductors are π conjugated materials, either small molecules or polymers. Their electrical transport properties are fundamentally distinct from those of inorganic semiconductors. Organic semiconductor thin films are amorphous or polycrystalline and their electronic structures consist of a distribution of localized electronic states with different energies. The localized sites are either individual molecules or isolated conjugated segments of a polymer chain. Electrical transport results from carrier hopping between neighboring sites. At room temperature, equilibration between neighboring sites of different energy is fast enough that carrier transport can be described using a mobility picture. Hopping transport in these disordered systems leads to a mobility that can depend strongly on both the electric field and carrier density. This article presents experimental measurements and theoretical analysis of the electrical transport properties of representative organic semiconductors.

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10

Pavlov, A. N. y I. P. Raevskii. "Piezoresistive effect in polycrystalline ferroelectric semiconductors". Physics of the Solid State 44, n.º 9 (septiembre de 2002): 1748–53. http://dx.doi.org/10.1134/1.1507260.

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11

HKH. "Polycrystalline semiconductors; physical properties and applications". Materials Research Bulletin 21, n.º 5 (mayo de 1986): 645–46. http://dx.doi.org/10.1016/0025-5408(86)90122-4.

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12

Hossein-Babaei, Faramarz, Saeed Masoumi y Amirreza Noori. "Linking thermoelectric generation in polycrystalline semiconductors to grain boundary effects sets a platform for novel Seebeck effect-based sensors". Journal of Materials Chemistry A 6, n.º 22 (2018): 10370–78. http://dx.doi.org/10.1039/c8ta02732c.

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Data available on the thermoelectric properties of polycrystalline semiconductors are inconsistent, riddled with gaps, and ascribe stronger Seebeck effects to polycrystalline samples rather than single crystals.

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13

Lombos, B. A. "Deep levels in semiconductors". Canadian Journal of Chemistry 63, n.º 7 (1 de julio de 1985): 1666–71. http://dx.doi.org/10.1139/v85-279.

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The role of deep-lying trapping centers in semi-insulating GaAs, polysilicon and polycrystalline tin oxide transparent electrode has been systematically investigated. It was demonstrated that some of the peculiar transport properties of these semiconductors can be elucidated by deep level compensation. A multilevel model is presented to determine the position of the Fermi level as a function of impurity concentrations. These include, quantitatively, the deep-lying levels which have been introduced by doping in the case of GaAs and by grain boundaries in the case of polycrystalline films. In the latter cases the dangling bonds, associated to lattice defects, are characterized by energy levels which are localized in the energy gap. These dangling bonds can act as electron traps when empty and hole traps when occupied. These are the deep levels.In each of the investigated three cases, this concept permitted the elucidation of some of the transport properties of these semiconductors.

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14

McKenan, Stuart, M. Grant Norton y C. Barry Carter. "Low-energy surfaces and interfaces in aluminum nitride". Proceedings, annual meeting, Electron Microscopy Society of America 48, n.º 4 (agosto de 1990): 350–51. http://dx.doi.org/10.1017/s0424820100174886.

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As a potential semiconductor substrate material, aluminum nitride (AIN) has recently become the subject of much research. In particular, the nature of the defects which occur in this material is yet to be fully understood. The mechanical strength, high thermal conductivity and large electrical resistivity and a relatively small thermal expansion coefficient, of the defect-free, single crystal material make it extremely well suited for use as a semiconductor substrate material. The polycrystalline AIN contains grain- boundaries, second phases, and many internal defects, all of which may produce a degradation in the physical properties of the substrate. The characterization of these microstructural defects in this material is obviously necessary in the understanding of the properties of the polycrystalline material.AIN has the hexagonal, wurtzite structure rather than the cubic structure of the more common semiconductors. It is also a polar material, and many of the polar surfaces are low-index planes. Grain boundaries (and other interfaces) composed of different crystallographic planes may be expected to have different physical and electrical properties. This effect of the crystallography has been investigated by TEM in two ways; firstly, grain boundaries in polycrystalline AIN have been characterized.

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15

Buono, C., F. Schipani, M. A. Ponce y C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n.º 5 (15 de marzo de 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.

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16

Buono, C., F. Schipani, M. A. Ponce y C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n.º 5 (15 de marzo de 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.

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17

Buono, C., F. Schipani, M. A. Ponce y C. M. Aldao. "Intergranular barrier height fluctuations in polycrystalline semiconductors". physica status solidi c 14, n.º 5 (15 de marzo de 2017): 1700069. http://dx.doi.org/10.1002/pssc.201700069.

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18

McKernan, S. y C. B. Carter. "Structure of Grain Boundaries in Polycrystalline Semiconductors". Solid State Phenomena 37-38 (marzo de 1994): 67–74. http://dx.doi.org/10.4028/www.scientific.net/ssp.37-38.67.

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19

Garcia‐Cuenca, M. V., J. L. Morenza y J. M. Codina. "On the Hall effect in polycrystalline semiconductors". Journal of Applied Physics 58, n.º 2 (15 de julio de 1985): 1080–82. http://dx.doi.org/10.1063/1.336313.

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20

Kesselring, R., A. W. K�lin y F. K. Kneub�hl. "Mid-infrared nonlinear phenomena in polycrystalline semiconductors". Applied Physics B Photophysics and Laser Chemistry 55, n.º 5 (noviembre de 1992): 437–45. http://dx.doi.org/10.1007/bf00325184.

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21

Dutta, J., D. Bhattacharyya, S. Chaudhuri y A. K. Pal. "Photoconductivity in polycrystalline semiconductors: Grain boundary effects". Solar Energy Materials and Solar Cells 36, n.º 4 (abril de 1995): 357–68. http://dx.doi.org/10.1016/0927-0248(94)00187-1.

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22

Bueno, Paulo R., José A. Varela y Elson Longo. "Admittance and dielectric spectroscopy of polycrystalline semiconductors". Journal of the European Ceramic Society 27, n.º 13-15 (enero de 2007): 4313–20. http://dx.doi.org/10.1016/j.jeurceramsoc.2007.02.155.

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23

Wang, Yi-Fei, Hiroaki Iino y Jun-ichi Hanna. "Fabrication of planarly-oriented polycrystalline thin films of smectic liquid crystalline organic semiconductors". Soft Matter 13, n.º 37 (2017): 6499–505. http://dx.doi.org/10.1039/c7sm01303e.

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24

Mayén-Hernández, Sandra Andrea, David Santos-Cruz, Francisco de Moure-Flores, Sergio Alfonso Pérez-García, Liliana Licea-Jiménez, Ma Concepción Arenas-Arrocena, José de Jesús Coronel-Hernández y José Santos-Cruz. "Optical, Electrical and Photocatalytic Properties of the Ternary SemiconductorsZnxCd1-xS,CuxCd1-xSandCuxZn1-xS". International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/158782.

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The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloysZnxCd1-xS,CuxCd1-xSandCuxZn1-xSwere investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film ofZnxCd1-xSannealed under vacuum at 300°C exhibited the highest photocatalytic activity.

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25

Nguyen, Viet Huong, Ulrich Gottlieb, Anthony Valla, Delfina Muñoz, Daniel Bellet y David Muñoz-Rojas. "Electron tunneling through grain boundaries in transparent conductive oxides and implications for electrical conductivity: the case of ZnO:Al thin films". Materials Horizons 5, n.º 4 (2018): 715–26. http://dx.doi.org/10.1039/c8mh00402a.

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26

Rajbhandari, A., K. Manandhar y R. R. Pradhananga. "Mott-Schottky Analysis of Laboratory Prepared Ag2S-AgI Membrane Electrode". Journal of Nepal Chemical Society 28 (23 de mayo de 2013): 89–93. http://dx.doi.org/10.3126/jncs.v28i0.8113.

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Mott-Schottky analysis has been carried out to study the semiconducting behavior of Ag2S-AgI material, which is used as membrane material in iodide ion sensors. Polycrystalline Ag2S-AgI materials with mixing ratios 1:1wasprepared by co-precipitation method and Mott-Schottky analysis was carried out. The impedance was recorded using a Solartron 1280 Schlumberger frequency response analyzer at 5 KHz and 10 mV perturbing signal. A straight line with a positive slope is observed between + 0.2 V to -0.2 V (SSE) indicating n-type semiconductor behavior of polycrystalline Ag2S-AgI membrane. The donor concentration ND was calculated from the slope using dielectric constant of Ag2S-AgI. The values obtained are ~ 6 orders of magnitude lower than in metals. This is an important implication for the charge and potential distribution at the semiconductor/electrolyte interface. The Mott Schottky analysis hasshown that the present materials are n-type semiconductors with donor defect concentration of 7.4x1017/cm3. DOI: http://dx.doi.org/10.3126/jncs.v28i0.8113 Journal of Nepal Chemical Society Vol. 28, 2011 Page: 89-93 Uploaded Date: May 24, 2013

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27

Dimitriadis, C. A. "The mobility of polycrystalline semiconductors under optical illumination". Journal of Physics D: Applied Physics 18, n.º 11 (14 de noviembre de 1985): 2241–46. http://dx.doi.org/10.1088/0022-3727/18/11/013.

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28

Palmer, Bruce J. y Roy Gordon. "Frequency-dependent conductivity in polycrystalline metals and semiconductors". Physical Review B 40, n.º 17 (15 de diciembre de 1989): 11549–60. http://dx.doi.org/10.1103/physrevb.40.11549.

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29

Yan, Yanfa, Wan-Jian Yin, Yelong Wu, Tingting Shi, Naba R. Paudel, Chen Li, Jonathan Poplawsky et al. "Physics of grain boundaries in polycrystalline photovoltaic semiconductors". Journal of Applied Physics 117, n.º 11 (21 de marzo de 2015): 112807. http://dx.doi.org/10.1063/1.4913833.

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30

Landry, C. C. y A. R. Barron. "Synthesis of Polycrystalline Chalcopyrite Semiconductors by Microwave Irradiation". Science 260, n.º 5114 (11 de junio de 1993): 1653–55. http://dx.doi.org/10.1126/science.260.5114.1653.

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31

Pavlov, A. N. y I. P. Raevski. "Nonlinear charge transport phenomena in polycrystalline ferroelectrics-semiconductors". Ferroelectrics 214, n.º 1 (junio de 1998): 157–69. http://dx.doi.org/10.1080/00150199808220253.

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32

Šamaj, L. "Recombination processes at grain boundaries in polycrystalline semiconductors". Physica Status Solidi (a) 100, n.º 1 (16 de marzo de 1987): 157–67. http://dx.doi.org/10.1002/pssa.2211000118.

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33

Šamaj, L. "The lifetime of minority carriers in polycrystalline semiconductors". Physica Status Solidi (a) 101, n.º 1 (16 de mayo de 1987): 137–41. http://dx.doi.org/10.1002/pssa.2211010115.

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34

Xu, Chencheng, Byungsul Min y Rolf Reineke-Koch. "Extended Tauc–Lorentz model (XTL) with log-normal distributed bandgap energies for optical permittivity in polycrystalline semiconductors". AIP Advances 12, n.º 11 (1 de noviembre de 2022): 115007. http://dx.doi.org/10.1063/5.0119256.

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An extended Tauc–Lorentz model is proposed to incorporate the bandgap variation in different grains in the polycrystalline semiconductors. The probability of a certain bandgap in the Tauc–Lorentz model is assumed to follow a log-normal distribution. After a Kramer–Kronig transform, the real part of this model is suggested as well. A comparison between this model and the experimental data in polycrystalline Si is carried out to validate this model. The experimental variation of grain size in the polycrystalline Si thin film can be correlated with the width of log-normal distribution of bandgap energies.

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35

Maji, Nilay, Bishnu Chakraborty y Tapan Kumar Nath. "Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector". Applied Physics Letters 122, n.º 9 (27 de febrero de 2023): 092404. http://dx.doi.org/10.1063/5.0133013.

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Here, the deposition of a polycrystalline thin film of a noble promising alloy Ti2CoSi (TCS) on a p-Si substrate has been reported, and its spin gapless semiconducting characteristics have been investigated experimentally. The structural, magnetic, and electronic transport features of the TCS film have been investigated in detail followed by its implementation as a ferromagnetic tunnel contact for proficient spin accumulation into a semiconductor employing both conventional three-terminal and non-local (NL) Hanle measurements. As we can avoid noticing erroneous effects like anisotropic magnetoresistance of the ferromagnetic electrodes, the NL-Hanle experiment has been established to be the most effective method for demonstrating true spin transport in semiconductors.

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36

Rau, U. y Jens Werner. "An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors". Solid State Phenomena 67-68 (abril de 1999): 553–58. http://dx.doi.org/10.4028/www.scientific.net/ssp.67-68.553.

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37

Gould, R. O. "Polycrystalline semiconductors: physical properties and applicationsedited by G. Harbeke". Acta Crystallographica Section A Foundations of Crystallography 43, n.º 1 (1 de enero de 1987): 160. http://dx.doi.org/10.1107/s0108767387099641.

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38

OZAWA, Yoshihito, Tatsuro YOSHIDA y Hisashi SATO. "709 Studies on the mechanical properties of polycrystalline semiconductors". Proceedings of Autumn Conference of Tohoku Branch 2010.46 (2010): 209–10. http://dx.doi.org/10.1299/jsmetohoku.2010.46.209.

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39

Antonucci, P. L., A. S. Aric�, N. Giordano y V. Antonucci. "Polycrystalline iron sulphide based semiconductors for solar energy conversion". Advanced Performance Materials 2, n.º 2 (junio de 1995): 145–59. http://dx.doi.org/10.1007/bf00711268.

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40

Greuter, F. y G. Blatter. "Electrical properties of grain boundaries in polycrystalline compound semiconductors". Semiconductor Science and Technology 5, n.º 2 (1 de febrero de 1990): 111–37. http://dx.doi.org/10.1088/0268-1242/5/2/001.

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41

Fishchuk, I. I. "Theory of the AC Hall effect in polycrystalline semiconductors". Journal of Physics: Condensed Matter 6, n.º 14 (4 de abril de 1994): 2747–50. http://dx.doi.org/10.1088/0953-8984/6/14/012.

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42

Gavrilenko, V. I. "Electronic Structure and Optical Properties of Polycrystalline Cubic Semiconductors". physica status solidi (b) 139, n.º 2 (1 de febrero de 1987): 457–66. http://dx.doi.org/10.1002/pssb.2221390213.

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43

Iaseniuc, O., M. Iovu, S. Rosoiu, M. Bardeanu, L. B. Enache, G. Mihai, O. Bordianu et al. "Structural analysis of As-S-Sb-Te polycrystalline nanostructured semiconductors". Chalcogenide Letters 19, n.º 11 (30 de noviembre de 2022): 841–46. http://dx.doi.org/10.15251/cl.2022.1911.841.

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The aim of this paper is to characterize the polycrystalline and vitreous phases in the As2S3-Sb2S3-Sb2Te3 systems using several techniques such as XRD, SEM, EDS, and micro-Raman spectroscopy. The As1.17S2.7Sb0.83Te0.40, As1.04S2.4Sb0.96Te0.60, As0.63S2.7Sb1.37Te0.30, and As0.56S2.4Sb1.44Te0.60 semiconductor chalcogenide bulk glasses were examined using Scanning Electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-Ray diffraction (XRD) and micro-Raman analysis. The EDS quantitative and mapping analysis showed that for each investigated area, the identified elements were sulfur (S), arsenic (As), antimony (Sb) and tellurium (Te). These elements are present in constant atomic percentages on the entire sample, showing a good homogeneity of the samples. The study of samples by the above-mentioned methods showed the presence of crystalline phases and amorphous phases with the polycrystalline inclusions corresponding to the structural units AsS3, Sb2S3, and Sb2Те3.

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44

Cuervo Farfán, Javier A., Críspulo E. Deluque Toro, Carlos A. Parra Vargas, David A. Landínez Téllez y Jairo Roa-Rojas. "Experimental and theoretical determination of physical properties of Sm2Bi2Fe4O12 ferromagnetic semiconductors". Journal of Materials Chemistry C 8, n.º 42 (2020): 14925–38. http://dx.doi.org/10.1039/d0tc02935a.

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45

Alyami, Mohammed y Satam Alotibi. "Physical Properties of E143 Food Dye as a New Organic Semiconductor Nanomaterial". Nanomaterials 13, n.º 13 (29 de junio de 2023): 1974. http://dx.doi.org/10.3390/nano13131974.

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Organic semiconductors (OSCs) have attracted considerable attention for many promising applications, such as organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs), and organic photovoltaics (OPVs). The present work introduced E143 food dye as a new nanostructured organic semiconductor that has several advantages, such as low cost, easy fabrication, biocompatibility, and unique physical properties. The material was characterized using a transmission electron microscope (TEM), Fourier transform infrared (FT-IR) spectroscopy, thermogravimetric analysis (TGA), and optical absorption spectroscopy. The study of X-ray diffraction (XRD) showed that E143 dye has a monoclinic polycrystalline structure. Electrical and dielectric properties were performed by impedance spectroscopy at frequencies (20 Hz–1 MHz) in the temperature range (303–473 K). The values of interband transitions and activation energy recommended the application of E143 dye as a new organic semiconductor material with promising stability, especially in the range of hot climates such as KSA.

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46

Masuda-Jindo, Kinichi y Y. Fujita. "Atomic Simulation Study of Gettering and Passivation in Polycrystalline Semiconductors". Solid State Phenomena 51-52 (mayo de 1996): 27–32. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.27.

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47

Mandowski, A. y J. Swiatek. "Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors". Solid State Phenomena 51-52 (mayo de 1996): 367–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.51-52.367.

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48

PRASAD, B. y N. M. RAVINDRA. "Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations". International Journal of Electronics 60, n.º 3 (marzo de 1986): 381–94. http://dx.doi.org/10.1080/00207218608920794.

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49

Maldovan, Martin. "Thermal energy transport model for macro-to-nanograin polycrystalline semiconductors". Journal of Applied Physics 110, n.º 11 (diciembre de 2011): 114310. http://dx.doi.org/10.1063/1.3665211.

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Lyu, Pin. "Intergrain magnetoresistance via spin-polarized tunneling in polycrystalline ferromagnetic semiconductors". Journal of Magnetism and Magnetic Materials 268, n.º 1-2 (enero de 2004): 251–56. http://dx.doi.org/10.1016/s0304-8853(03)00507-9.

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