Tesis sobre el tema "Polycrystalline Oxides - Grain Boundaries"
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Bhatt, Jayesh S. y Marc-Olivier Coppens. "Diffusion at tilt grain boundaries in polycrystalline porous materials". Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-198033.
Texto completoBhatt, Jayesh S. y Marc-Olivier Coppens. "Diffusion at tilt grain boundaries in polycrystalline porous materials". Diffusion fundamentals 24 (2015) 6, S. 1, 2015. https://ul.qucosa.de/id/qucosa%3A14520.
Texto completoAyres, J. R. A. "Electrically active defects associated with dislocations and grain boundaries in silicon". Thesis, University of Sussex, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307235.
Texto completoRitherdon, Justin. "Surface segregation and its influence on the oxidation of polycrystalline nickel". Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318238.
Texto completoSarrazit, Franck. "Structure of grain boundaries in hexagonal materials". Thesis, University of Liverpool, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367291.
Texto completoChen, Hon-Wen James. "Crystal orientation of polycrystalline diamond tip array /". [St. Lucia, Qld.], 2004. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17687.pdf.
Texto completoZhao, Jingyi Zhao. "Relating Grain Boundaries to the Mechanical Properties of Polycrystalline Material: Gradient Nanocrystalline Material and Electro-Plasticity". University of Akron / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=akron153296020243128.
Texto completoGonzalez, David. "A contribution on modelling deformation and residual stress in 3D polycrystals". Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/a-contribution-on-modelling-deformation-and-residual-stress-in-3d-polycrystals(dad0c6be-0494-46e6-8dc8-d3a968212401).html.
Texto completoNicoletti, Sergio. "Elaboration et caractérisation de jonctions Josephson YBaCuO sur joints de grains artificiels". Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10091.
Texto completoBerenov, Andrey Valdimirovich. "Cation deficiency in lanthanum manganites". Thesis, Imperial College London, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322303.
Texto completoSun, Tsai-ling y 孫采翎. "Correlation of coincidence-site lattice grain boundaries and conductivity for polycrystalline strontium titanate". Thesis, 2014. http://ndltd.ncl.edu.tw/handle/59716848895628620623.
Texto completo國立臺灣科技大學
材料科學與工程系
102
Strontium titanate (SrTiO3), has been reported as the candidate of solid-oxide-fuel-cell anode materials to substitute the conventional materials of Ni-doped yttria-stabilized zirconia (YSZ) cermets because of its high chemical and thermal stability. However, the ionic conductivity of SrTiO3 is low comparing to YSZ. In general, space charge of grain boundaries (GBs) trapped oxygen ion to result low ionic conductivity. Based on previous studies, there is no evidence of space charge layers in low energy coincidence-site lattice ?? GBs which do not impede the transport of charge. So far, the reasons of low ?? GBs are abnormal grain growth (losing of low energy GBs) and difficult to orientate because ceramic is too brittle. This study attempts to increase the population of ?? GBs in polycrystalline SrTiO3 for high ionic conductivities. The strategy is to form more (111) faces (?? GB plane) on the surface starting powder by chosen suitable precursor additives. Four types of SrTiO3 powders have been synthesized using spray pyrolysis with strontium nitrate, titanium isopropoxide and additives of nitric acid (HNO3) and the mixtures of HNO3 and hydrogen peroxide (H2O2) with different concentrations. The crystalline structures of SrTiO3 particles were characterized by X-ray diffractometer and Raman spectra. The morphology and size of SrTiO3 particles were observed by using scanning electron microscope (SEM) and transmission electron microscope. And, the microstructures of sintered SrTiO3 bulks were observed by using SEM. The GB orientations were characterized by electron back-scattered diffraction (EBSD). The conductivities were measured by electrochemical impedance spectroscopy and DC method. The microstructural results suggest that the SrTiO3 particles prepared from the additive mixture of HNO3 and H2O2 have a rough surface which contains more (111) surfaces than that of the SrTiO3 particles prepared from HNO3 only. In addition, EBSD and DC measurements show that the SrTiO3 from HNO3 and H2O2 (highest population of ?? GBs) exhibit highest conductivity, which supports our microstructural observations.
Chowdhury, Mazharul Huq. "Electrical Properties of Grain Boundaries in Low Doped Polycrystalline Materials with Applications to Detectors". Thesis, 2010. http://spectrum.library.concordia.ca/7486/1/Chowdhury_MASc_S2011.pdf.
Texto completoHsieh, Sui Mee Kimberly. "Electrical transport and noise in polycrystalline 2D van der Waals materials and their grain boundaries". Thesis, 2019. https://etd.iisc.ac.in/handle/2005/4506.
Texto completoParanjape, Mandar A. "Effect Of Strain, Microstructure And Grain Boundaries On The Electrical Properties In Thin Films Of Colossal Magneto Resistive Oxides". Thesis, 2004. https://etd.iisc.ac.in/handle/2005/1333.
Texto completoParanjape, Mandar A. "Effect Of Strain, Microstructure And Grain Boundaries On The Electrical Properties In Thin Films Of Colossal Magneto Resistive Oxides". Thesis, 2004. http://etd.iisc.ernet.in/handle/2005/1333.
Texto completoYang, Ting y 楊婷. "The Analytic Modeling of the Effect of the Location of Grain Boundaries on the Threshold Voltage of Polycrystalline Silicon Thin Film Transistors". Thesis, 2010. http://ndltd.ncl.edu.tw/handle/68882511698402079056.
Texto completo長庚大學
光電工程研究所
98
Polycrystalline silicon thin film transistors (poly-Si TFTs) are widely used in active matrix liquid crystal displays (AMLCDs). Grain boundaries will cause the variation of threshold voltage in poly-Si TFTs. This thesis focuses on the effect of the locations of grain boundaries on the threshold voltage. New analytical models were developed. Base on the solution by two dimensional Poisson’s equation, lateral surface potential with a single grain boundary was obtain by assuming the grain boundary as a region with trapped charges. La-place transform was calculated to obtain the surface potential with multiple grain boundaries in poly-Si TFTs.
Shashank, Gokhale Shreyas. "Dynamics of Glass-Forming Liquids and Shear-Induced Grain Growth in Dense Colloidal Suspensions". Thesis, 2015. https://etd.iisc.ac.in/handle/2005/3730.
Texto completoShashank, Gokhale Shreyas. "Dynamics of Glass-Forming Liquids and Shear-Induced Grain Growth in Dense Colloidal Suspensions". Thesis, 2015. http://etd.iisc.ernet.in/2005/3730.
Texto completoKochat, Vidya. "Impact of Disorder, Magnetism and Proximity-Induced Superconductivity on Conductance Fluctuations in Graphene". Thesis, 2014. http://etd.iisc.ac.in/handle/2005/3048.
Texto completoKochat, Vidya. "Impact of Disorder, Magnetism and Proximity-Induced Superconductivity on Conductance Fluctuations in Graphene". Thesis, 2014. http://hdl.handle.net/2005/3048.
Texto completoVinchon, Pierre. "Étude fondamentale des interactions plasma-graphène dans les plasmas Argon/B2H6". Thesis, 2020. http://hdl.handle.net/1866/25253.
Texto completoThe research realized in this PhD thesis focuses on the understanding of plasma-graphene interactions during exposure of polycrystalline graphene films to a low-pressure argon RF plasma containing diborane (B2H6). A particular attention is devoted to the kinetics driving the damage formation dynamics. In the case of a continuous, argon plasma, the absence of energy threshold for the production of ion-induced damage is demonstrated. This is explained by two-step etching, facilitated by the high number density of charged species in the H-mode of RF plasmas. Raman characterization of plasma-treated graphene films shows a wide distribution over the small area surveyed. In order to link these fluctuations to the initial state of graphene, Raman imaging (RIMA) is adapted to extract quantitative data on the state of graphene before and after plasma treatment. Subsequently, the temporal study of argon RF plasmas in the pulsed regime makes it possible to find operating conditions with a drastically reduced fluence of charged species compared to the continuous regime; in combination with RIMA studies, this allows temporally- and spatially-resolved investigations of plasma-graphene interactions. For the first time, a preferential self-healing of ion-irradiation damage at grain boundaries of graphene films is experimentally demonstrated. Moreover, by using several electrical and optical diagnostics of the argon plasma in the pulsed regime, it is possible to determine operating conditions in which either the ions, the metastables or the VUV photons emitted by the resonant states become the main energy vectors. From these experiments, the respective roles of each of these species in the physics of plasma-graphene interactions could be highlighted. Finally, the introduction of 5% of diborane into the argon plasma induces a radical modification of the physicochemical properties of the plasma. Exposure of graphene films to this highly reactive plasma reveals high boron incorporation with minimal ion and hydrogen damage.