Artículos de revistas sobre el tema "Polarization switching barrier"
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Zhang, Yuanhao, Jibo Xu, Yahui Yu, Weijie Zheng, Zhiyu Xu, Lingzhi Lu, Ziyu Wang, Chaojing Lu y Zheng Wen. "Changeable electroresistance in Pt/Pb(Zr,Ti)O3/(La,Sr)MnO3 tunnel junctions and memristive properties for synaptic plasticity emulation". Applied Physics Letters 120, n.º 20 (16 de mayo de 2022): 203501. http://dx.doi.org/10.1063/5.0093112.
Texto completoYANG, JUN, KAI-MING JIANG, WEN YUAN WU y YAN CHUN GONG. "MAGNETIC SWITCHING EFFECT IN SPIN FIELD-EFFECT TRANSISTORS". International Journal of Modern Physics B 24, n.º 23 (20 de septiembre de 2010): 4501–7. http://dx.doi.org/10.1142/s0217979210056190.
Texto completoDING, HANG-CHEN, SI-QI SHI, WEI-HUA TANG y CHUN-GANG DUAN. "FERROELECTRIC SWITCHING PATH IN MONODOMAIN RHOMBOHEDRAL BiFeO3 CRYSTAL: A FIRST-PRINCIPLES STUDY". Journal of Advanced Dielectrics 01, n.º 02 (abril de 2011): 179–84. http://dx.doi.org/10.1142/s2010135x11000264.
Texto completoSun, Yu, Zi-Lin Yuan, Qian-Ze Li, Cai-Xin Zhang, Ke-Qiu Chen y Li-Ming Tang. "Electrically controlled valley polarization in 2D buckled honeycomb structures". Modern Physics Letters B 35, n.º 25 (3 de agosto de 2021): 2150390. http://dx.doi.org/10.1142/s0217984921503905.
Texto completoZhu, Yong Dan, Cheng Hu y An You Zuo. "Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure". Advanced Materials Research 1061-1062 (diciembre de 2014): 333–36. http://dx.doi.org/10.4028/www.scientific.net/amr.1061-1062.333.
Texto completoZhang, Qingtian, Zijing Lin y K. S. Chan. "Spin polarization switching in monolayer graphene through a Rashba multi-barrier structure". Applied Physics Letters 102, n.º 14 (8 de abril de 2013): 142407. http://dx.doi.org/10.1063/1.4801843.
Texto completoWei, Wei, Guoqing Zhao, XuePeng Zhan, Weiqiang Zhang, Pengpeng Sang, Qianwen Wang, Lu Tai et al. "Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2". Journal of Applied Physics 131, n.º 15 (21 de abril de 2022): 154101. http://dx.doi.org/10.1063/5.0084660.
Texto completoHamouda, Wassim, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder, Tevfik Onur Mentes, Andrea Locatelli y Nick Barrett. "Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy". Applied Physics Letters 120, n.º 20 (16 de mayo de 2022): 202902. http://dx.doi.org/10.1063/5.0093125.
Texto completoChen, Rong, Zilian Qi, Yingfei Xiong, Yicheng Li, Xiaodong Zhang y Kun Cao. "Interface-mediated ferroelectricity in PMN-PT/PZT flexible bilayer via pulsed laser deposition". Journal of Vacuum Science & Technology A 41, n.º 3 (mayo de 2023): 032702. http://dx.doi.org/10.1116/6.0002386.
Texto completoChen, Feng, Robert Schafranek, André Wachau, Sergey Zhukov, Julia Glaum, Torsten Granzow, Heinz von Seggern y Andreas Klein. "Barrier heights, polarization switching, and electrical fatigue in Pb(Zr,Ti)O3 ceramics with different electrodes". Journal of Applied Physics 108, n.º 10 (15 de noviembre de 2010): 104106. http://dx.doi.org/10.1063/1.3512969.
Texto completoLiehr, Maximilian, Jubin Hazra, Karsten Beckmann, Vineetha Mukundan, Ioannis Alexandrou, Timothy Yeow, Joseph Race et al. "Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform". Journal of Vacuum Science & Technology B 41, n.º 1 (enero de 2023): 012805. http://dx.doi.org/10.1116/6.0002097.
Texto completoLiang, Shiheng, Zhongwei Yu, Xavier Devaux, Anthony Ferri, Weichuan Huang, Huaiwen Yang, Rachel Desfeux et al. "Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier". ACS Applied Materials & Interfaces 10, n.º 36 (20 de agosto de 2018): 30614–22. http://dx.doi.org/10.1021/acsami.8b11437.
Texto completoAbramov, Alexander, Boris Slautin, Victoria Pryakhina, Vladimir Shur, Andrei Kholkin y Denis Alikin. "Spatially-Resolved Study of the Electronic Transport and Resistive Switching in Polycrystalline Bismuth Ferrite". Sensors 23, n.º 1 (3 de enero de 2023): 526. http://dx.doi.org/10.3390/s23010526.
Texto completoLiu, Zhijie, Xinyu Wang, Xingyue Ma, Yurong Yang y Di Wu. "Doping effects on the ferroelectric properties of wurtzite nitrides". Applied Physics Letters 122, n.º 12 (20 de marzo de 2023): 122901. http://dx.doi.org/10.1063/5.0145818.
Texto completoPirro, Michele, Xuanyi Zhao, Bernard Herrera, Pietro Simeoni y Matteo Rinaldi. "Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films". Micromachines 13, n.º 6 (31 de mayo de 2022): 877. http://dx.doi.org/10.3390/mi13060877.
Texto completoMüller, Moritz L., Maximilian T. Becker, Nives Strkalj y Judith L. MacManus-Driscoll. "Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films". Applied Physics Letters 121, n.º 9 (29 de agosto de 2022): 093501. http://dx.doi.org/10.1063/5.0095762.
Texto completoKIM, HONG KOO y NASIR ABDUL BASIT. "FERROELECTRIC NONVOLATILE MEMORY FIELD-EFFECT TRANSISTORS BASED ON A NOVEL BUFFER LAYER STRUCTURE". International Journal of High Speed Electronics and Systems 10, n.º 01 (marzo de 2000): 39–46. http://dx.doi.org/10.1142/s0129156400000076.
Texto completoMokhtarnejad, Mahshid, Morteza Asgari y Arash Sabatyan. "Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells". International Journal of Optics 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/7280613.
Texto completoYoo, Jaewook, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo y Hagyoul Bae. "Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications". Electronics 12, n.º 10 (19 de mayo de 2023): 2297. http://dx.doi.org/10.3390/electronics12102297.
Texto completoSong, Rui, Bi-Li Wang, Kai Feng, Li Wang y Dan-Dan Liang. "Structural, magnetic and ferroelectric properties of VOBr<sub>2 </sub>monolayer: A first-principles study". Acta Physica Sinica 71, n.º 3 (2022): 037101. http://dx.doi.org/10.7498/aps.71.20211516.
Texto completoShields, Joe, Carlota Ruiz de Galarreta, Jacopo Bertolotti y C. David Wright. "Enhanced Performance and Diffusion Robustness of Phase-Change Metasurfaces via a Hybrid Dielectric/Plasmonic Approach". Nanomaterials 11, n.º 2 (18 de febrero de 2021): 525. http://dx.doi.org/10.3390/nano11020525.
Texto completoLong, Xiao, Huan Tan, Florencio Sánchez, Ignasi Fina y Josep Fontcuberta. "Disentangling electronic and thermal contributions to light-induced resistance switching in BaTiO3 ferroelectric tunnel junction". Journal of Applied Physics 132, n.º 21 (7 de diciembre de 2022): 214103. http://dx.doi.org/10.1063/5.0125040.
Texto completoDiao, Zhitao, Dmytro Apalkov, Mahendra Pakala, Yunfei Ding, Alex Panchula y Yiming Huai. "Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers". Applied Physics Letters 87, n.º 23 (5 de diciembre de 2005): 232502. http://dx.doi.org/10.1063/1.2139849.
Texto completoKhan, Aaliyah C., Autumn S. Cook, Joshua A. Leginze y Joseph W. Bennett. "Developing new antiferroelectric and ferroelectric oxides and chalcogenides within the A2BX3 family". Journal of Materials Research 37, n.º 1 (28 de octubre de 2021): 346–59. http://dx.doi.org/10.1557/s43578-021-00410-3.
Texto completoRen, Yangyang, Yaxin Gao, Tingting Zhong, Menghao Wu y Jun-Ming Liu. "Proton transfer in layered hydrogen-bonded system γ-MOOH (M = Al, Sc): Robust bi-mode ferroelectricity and 1D superionic conductivity". Applied Physics Letters 122, n.º 4 (23 de enero de 2023): 042901. http://dx.doi.org/10.1063/5.0136846.
Texto completoStoleriu, Laurentiu, Cristina Ciomaga, Fabio Fochi, Pilar Ochoa, José Fernández, Carmen Galassi, Vincenzo Buscaglia, Paolo Nanni y Liliana Mitoseriu. "Mechanically clamped PZT ceramics investigated by First-Order Reversal Curves diagram". Processing and Application of Ceramics 4, n.º 3 (2010): 209–14. http://dx.doi.org/10.2298/pac1003209s.
Texto completoYu, Qisheng, Jiawei Huang, Changming Ke, Zhuang Qian, Liyang Ma y Shi Liu. "Semiconducting nonperovskite ferroelectric oxynitride designed ab initio". Applied Physics Letters 122, n.º 14 (3 de abril de 2023): 142902. http://dx.doi.org/10.1063/5.0141987.
Texto completoYe, Fan, Xin-Gui Tang, Jia-Ying Chen, Wen-Min Zhong, Li Zhang, Yan-Ping Jiang y Qiu-Xiang Liu. "Neurosynaptic-like behavior of Ce-doped BaTiO3 ferroelectric thin film diodes for visual recognition applications". Applied Physics Letters 121, n.º 17 (24 de octubre de 2022): 171901. http://dx.doi.org/10.1063/5.0120159.
Texto completoAbbasi, Pedram, David P. Fenning y Tod A. Pascal. "Electrocatalytic Hydrogen Evolution on Ferroelectric Perovskite Heterostructures". ECS Meeting Abstracts MA2022-01, n.º 38 (7 de julio de 2022): 1691. http://dx.doi.org/10.1149/ma2022-01381691mtgabs.
Texto completoHofstetter, Daniel, Cynthia Aku-Leh, Hans Beck y David P. Bour. "AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers". Crystals 11, n.º 11 (22 de noviembre de 2021): 1431. http://dx.doi.org/10.3390/cryst11111431.
Texto completoXue, Fei, Xin He, Yinchang Ma, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu y Xixiang Zhang. "Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions". Nature Communications 12, n.º 1 (diciembre de 2021). http://dx.doi.org/10.1038/s41467-021-27617-6.
Texto completoWang, Hao-Chen, Zhi-Hao Wang, Xuan-Yan Chen, Su-Huai Wei, Wenguang Zhu y Xie Zhang. "Competition between stepwise polarization switching and chirality coupling in ferroelectric GeS nanotubes". Chinese Physics Letters, 13 de marzo de 2023. http://dx.doi.org/10.1088/0256-307x/40/4/047701.
Texto completoWei, Yingfen, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maroutian, Guillaume Agnus, Philippe Lecoeur y Beatriz Noheda. "Magneto-ionic control of spin polarization in multiferroic tunnel junctions". npj Quantum Materials 4, n.º 1 (diciembre de 2019). http://dx.doi.org/10.1038/s41535-019-0201-0.
Texto completoBernacki, Stephen E. "Polarization Dependent Conductivity in Thin Film Pzt Capacitors". MRS Proceedings 243 (1991). http://dx.doi.org/10.1557/proc-243-135.
Texto completoLee, Kyoungjun, Kunwoo Park, Hyun-Jae Lee, Myeong Seop Song, Kyu Cheol Lee, Jin Namkung, Jun Hee Lee, Jungwon Park y Seung Chul Chae. "Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency". Scientific Reports 11, n.º 1 (18 de marzo de 2021). http://dx.doi.org/10.1038/s41598-021-85773-7.
Texto completoHuang, Biaohong, Xuefeng Zhao, Xiaoqi Li, Lingli Li, Zhongshuai Xie, Di Wang, Dingshuai Feng et al. "Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching". ACS Nano, 26 de junio de 2023. http://dx.doi.org/10.1021/acsnano.3c01548.
Texto completoXia, Feng y Q. M. Zhang. "Influence of Metal Electrodes on the Ferroelectric Responses of Poly(vinylidene fluoride-trifluoroethylene) Copolymer Thin Films". MRS Proceedings 734 (2002). http://dx.doi.org/10.1557/proc-734-b9.20.
Texto completoZhu Mao-Cong, Shao Ya-Jie, Zhou Jing, Chen Wen, Wang Zhi-Qing y Tian Jing. "Niobium-doped lead zirconate titanate ferroelectric films improve the resistive properties of CuInS<sub>2</sub> QDs". Acta Physica Sinica, 2022, 0. http://dx.doi.org/10.7498/aps.71.20220911.
Texto completoWolf, R. M., J. F. M. Cillessen, J. B. Giesbers, E. Pastoor, G. Miiller, K. O. Grosse-Holz y P. W. M. Blom. "Oxidic Field Effect Structures with Memory". MRS Proceedings 401 (1995). http://dx.doi.org/10.1557/proc-401-163.
Texto completoPark, Jaehong, In Won Yeu, Gyuseung Han, Cheol Seong Hwang y Jung-Hae Choi. "Ferroelectric switching in bilayer 3R MoS2 via interlayer shear mode driven by nonlinear phononics". Scientific Reports 9, n.º 1 (17 de octubre de 2019). http://dx.doi.org/10.1038/s41598-019-50293-y.
Texto completoLi, Yue, Xing-peng Liu, Tang-you Sun, Fa-bi Zhang, Tao Fu, Pei-hua Wang-yang, Hai-ou Li y Yong-he Chen. "Impact of Al x Ga1-x N barrier thickness and Al composition on the electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs". Chinese Physics B, 22 de junio de 2022. http://dx.doi.org/10.1088/1674-1056/ac7b1a.
Texto completoMehling, V., Ch Tsakmakis y D. Gross. "Fully Coupled 3-D Modelling of Ferroelectric Polycrystalline Material Behavior". MRS Proceedings 881 (2005). http://dx.doi.org/10.1557/proc-881-cc4.9.
Texto completoLi, Dong, Pengyu Liu, Ruiman He, Yihang Bai, Chang Liu, Bing Wang y Guanwei Jia. "Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer". Applied Physics Letters 123, n.º 5 (31 de julio de 2023). http://dx.doi.org/10.1063/5.0155960.
Texto completoLee, Kwang B., S. Tirumala, Y. Song, Sang O. Ryu y Seshu B. Desu. "Simple Electrode-Barrier Structure Using Ir for Integration of PZT-Based High-Density Nonvolatile Memories". MRS Proceedings 541 (1998). http://dx.doi.org/10.1557/proc-541-197.
Texto completoGuo, Fei, Yaping Liu, Rui Liu, Siyuan Guo, Haojie Xu, Yang Li, Bo Yang y Shifeng Zhao. "The evolution between ferroelectric photovoltaic effect and resistance switching behavior engineered by the polarization field and barrier characteristics". Optics Express, 22 de junio de 2023. http://dx.doi.org/10.1364/oe.493183.
Texto completoRyu, Hojoon, Haonan Wu, Fubo Rao y Wenjuan Zhu. "Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing". Scientific Reports 9, n.º 1 (diciembre de 2019). http://dx.doi.org/10.1038/s41598-019-56816-x.
Texto completoHu, Yuzhong, Kaushik Parida, Hao Zhang, Xin Wang, Yongxin Li, Xinran Zhou, Samuel Alexander Morris et al. "Bond engineering of molecular ferroelectrics renders soft and high-performance piezoelectric energy harvesting materials". Nature Communications 13, n.º 1 (24 de septiembre de 2022). http://dx.doi.org/10.1038/s41467-022-33325-6.
Texto completoYan, Shuo, Xueli Hu, Xiaomei Lu, Junting Zhang, Xiaofan Shen y Fengzhen Huang. "Self-organization of ferroelectric domains induced by water and reinforced via ultrasonic vibration". Communications Materials 4, n.º 1 (26 de mayo de 2023). http://dx.doi.org/10.1038/s43246-023-00371-6.
Texto completoRehman, Majeed Ur y Zhenhua Qiao. "MX family: An efficient platform for topological spintronics based on Rashba and Zeeman-like spin splittings". Journal of Physics: Condensed Matter, 24 de octubre de 2022. http://dx.doi.org/10.1088/1361-648x/ac9d15.
Texto completoLi, Yun-Qin, Xin-Yu Wang, Shi-Yu Zhu, Dai-Song Tang, Qi-Wen He y Xiao-Chun Wang. "Enhanced vertical polarization and ultra-low polarization switching barriers of two-dimensional SnS/SnSSe ferroelectric heterostructures". Journal of Materials Chemistry C, 2022. http://dx.doi.org/10.1039/d2tc02721f.
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