Artículos de revistas sobre el tema "Plasma Chemistry - SiH4"
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Orlicki, Dariusz, Vladimir Hlavacek y Hendrik J. Viljoen. "Modeling of a–Si:H deposition in a dc glow discharge reactor". Journal of Materials Research 7, n.º 8 (agosto de 1992): 2160–81. http://dx.doi.org/10.1557/jmr.1992.2160.
Texto completoSchram, Daniel C. "Plasma processing and chemistry". Pure and Applied Chemistry 74, n.º 3 (1 de enero de 2002): 369–80. http://dx.doi.org/10.1351/pac200274030369.
Texto completoNakayama, Yoshikazu, Kazuo Wakimura, Seiki Takahashi, Hideki Kita y Takao Kawamura. "Plasma deposition of aSi:H:F films from SiH2F2 and SiF4SiH4". Journal of Non-Crystalline Solids 77-78 (diciembre de 1985): 797–800. http://dx.doi.org/10.1016/0022-3093(85)90780-x.
Texto completoPark, Hwanyeol y Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma". Coatings 11, n.º 9 (29 de agosto de 2021): 1041. http://dx.doi.org/10.3390/coatings11091041.
Texto completoKim, Ho Jun. "Importance of Dielectric Elements for Attaining Process Uniformity in Capacitively Coupled Plasma Deposition Reactors". Coatings 12, n.º 4 (28 de marzo de 2022): 457. http://dx.doi.org/10.3390/coatings12040457.
Texto completoMilne, S. B., Y. Q. Fu, J. K. Luo, A. J. Flewitt, S. Pisana, A. Fasoli y W. I. Milne. "Stress and Crystallization of Plasma Enhanced Chemical Vapour Deposition Nanocrystalline Silicon Films". Journal of Nanoscience and Nanotechnology 8, n.º 5 (1 de mayo de 2008): 2693–98. http://dx.doi.org/10.1166/jnn.2008.629.
Texto completoYuuki, Akimasa, Takaaki Kawahara, Yasuji Matsui y Kunihide Tachibana. "A Study of Film Precursors in SiH4 Plasma-Enhanced CVD." KAGAKU KOGAKU RONBUNSHU 17, n.º 4 (1991): 758–67. http://dx.doi.org/10.1252/kakoronbunshu.17.758.
Texto completoJo, Sanghyun, Suik Kang, Kyungjun Lee y Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas". Coatings 12, n.º 9 (15 de septiembre de 2022): 1342. http://dx.doi.org/10.3390/coatings12091342.
Texto completoKim, Dong-Joo y Kyo-Seon Kim. "Effect of pulse modulation on particle growth during SiH4 plasma process". Korean Journal of Chemical Engineering 25, n.º 4 (julio de 2008): 939–46. http://dx.doi.org/10.1007/s11814-008-0153-8.
Texto completoThang, Doan Ha, Hiroshi Muta y Yoshinobu Kawai. "Investigation of plasma parameters in 915 MHz ECR plasma with SiH4/H2 mixtures". Thin Solid Films 516, n.º 13 (mayo de 2008): 4452–55. http://dx.doi.org/10.1016/j.tsf.2007.10.099.
Texto completoNishimiya, Tatsuyuki, Tsukasa Yamane, Sachiko Nakao, Yoshiaki Takeuchi, Yasuhiro Yamauchi, Hiromu Takatsuka, Hiroshi Muta, Kiichiro Uchino y Yoshinobu Kawai. "Characteristics of SiH4/H2 VHF plasma produced by short gap discharge". Surface and Coatings Technology 205 (julio de 2011): S411—S414. http://dx.doi.org/10.1016/j.surfcoat.2011.02.043.
Texto completoPark, N. M., S. H. Kim, G. Y. Sung y S. J. Park. "Growth and Size Control of Amorphous Silicon Quantum Dots Using SiH4/N2 Plasma". Chemical Vapor Deposition 8, n.º 6 (3 de diciembre de 2002): 254–56. http://dx.doi.org/10.1002/1521-3862(20021203)8:6<254::aid-cvde254>3.0.co;2-s.
Texto completoNaskar, S., S. D. Wolter, C. A. Bower, B. R. Stoner y J. T. Glass. "Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study". Journal of Materials Research 23, n.º 5 (mayo de 2008): 1433–42. http://dx.doi.org/10.1557/jmr.2008.0176.
Texto completoKim, Kyung-Soo y D.-Hyun Jung. "The permeability characteristics of non-porous membrane by C7H5F3/SiH4, plasma polymeric membrane". Korean Journal of Chemical Engineering 17, n.º 2 (marzo de 2000): 149–55. http://dx.doi.org/10.1007/bf02707136.
Texto completoHajjar, J. ‐J J. y Rafael Reif. "Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures". Journal of The Electrochemical Society 137, n.º 9 (1 de septiembre de 1990): 2888–96. http://dx.doi.org/10.1149/1.2087094.
Texto completoLEE, Su Jin y Byungwhan KIM. "Deposition of silicon nitride film at room temperature using a SiH4–NH3–N2 plasma". Journal of the Ceramic Society of Japan 118, n.º 1384 (2010): 1188–91. http://dx.doi.org/10.2109/jcersj2.118.1188.
Texto completoKumar, Sushil, Jhuma Gope, Aravind Kumar, A. Parashar, C. M. S. Rauthan y P. N. Dixit. "High Pressure Growth of Nanocrystalline Silicon Films". Journal of Nanoscience and Nanotechnology 8, n.º 8 (1 de agosto de 2008): 4211–17. http://dx.doi.org/10.1166/jnn.2008.an20.
Texto completoBoogaarts, M. G. H., P. J. Böcker, W. M. M. Kessels, D. C. Schram y M. C. M. van de Sanden. "Cavity ring down detection of SiH3 on the broadband à 2A1′ ← X̃ 2A1 transition in a remote Ar–H2–SiH4 plasma". Chemical Physics Letters 326, n.º 5-6 (agosto de 2000): 400–406. http://dx.doi.org/10.1016/s0009-2614(00)00795-8.
Texto completoSmith, Donald L., Andrew S. Alimonda, Chau‐Chen Chen, Steven E. Ready y Barbara Wacker. "Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma". Journal of The Electrochemical Society 137, n.º 2 (1 de febrero de 1990): 614–23. http://dx.doi.org/10.1149/1.2086517.
Texto completoLoboda, M. J. y J. A. Seifferly. "Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films". Journal of Materials Research 11, n.º 2 (febrero de 1996): 391–98. http://dx.doi.org/10.1557/jmr.1996.0048.
Texto completoYamauchi, Yasuhiro, Yoshiaki Takeuchi, Hiromu Takatsuka, Yuichi Kai, Hiroshi Muta y Yoshinobu Kawai. "Large area SiH4/H2 VHF plasma produced at high pressure using multi-rod electrode". Surface and Coatings Technology 202, n.º 22-23 (agosto de 2008): 5668–71. http://dx.doi.org/10.1016/j.surfcoat.2008.06.041.
Texto completoAmbrosio, R. "Silicon–germanium films prepared from SiH4 and GeF4 by low frequency plasma deposition". Journal of Non-Crystalline Solids 329, n.º 1-3 (1 de noviembre de 2003): 134–39. http://dx.doi.org/10.1016/j.jnoncrysol.2003.08.027.
Texto completoMorozov, O. V. y I. I. Amirov. "SiO2 film deposition in a low-pressure RF inductive discharge SiH4 + O2 plasma". Russian Microelectronics 29, n.º 3 (mayo de 2000): 153–58. http://dx.doi.org/10.1007/bf02773255.
Texto completoItagaki, N., K. Sasaki y Y. Kawai. "Electron temperature measurement in SiH4/H2 ECR plasma produced by 915 MHz microwaves". Thin Solid Films 506-507 (mayo de 2006): 479–84. http://dx.doi.org/10.1016/j.tsf.2005.08.087.
Texto completoKim, Byungwhan y Sang Hee Kwon. "Temperature effect on charge density of silicon nitride films deposited in SiH4–NH3–N2 plasma". Surface and Coatings Technology 202, n.º 22-23 (agosto de 2008): 5539–42. http://dx.doi.org/10.1016/j.surfcoat.2008.06.030.
Texto completoNagai, Takehiko, Arno H. M. Smets y Michio Kondo. "Time-resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4–H2 VHF plasma". Journal of Non-Crystalline Solids 354, n.º 19-25 (mayo de 2008): 2096–99. http://dx.doi.org/10.1016/j.jnoncrysol.2007.09.009.
Texto completoZhou, Nan-Sheng, Shizuo Fujita y Akio Sasaki. "Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2 gas mixture". Journal of Electronic Materials 14, n.º 1 (enero de 1985): 55–72. http://dx.doi.org/10.1007/bf02657920.
Texto completoJia, Haijun, Jhantu K. Saha, Naoyuki Ohse y Hajime Shirai. "High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma". Thin Solid Films 515, n.º 17 (junio de 2007): 6713–20. http://dx.doi.org/10.1016/j.tsf.2007.01.055.
Texto completoKim, Jae-Hong, Chai-O. Chung, Dongsun Sheen, Yong-Sun Sohn, Hyun-Chul Sohn, Jin-Woong Kim y Sung-Wook Park. "Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry". Journal of Applied Physics 96, n.º 3 (agosto de 2004): 1435–42. http://dx.doi.org/10.1063/1.1767979.
Texto completoKim, Byungwhan, Minji Kwon y Yong Ho Seo. "Room temperature, ion energy-controlled deposition of silicon nitride films in a SiH4-N2 plasma". Metals and Materials International 16, n.º 4 (agosto de 2010): 621–25. http://dx.doi.org/10.1007/s12540-010-0815-z.
Texto completoSaha, Jhantu K., Haijun Jia, Naoyuki Ohse y Hajime Shirai. "High rate growth highly crystallized microcrystalline silicon films using SiH4/H2 high-density microwave plasma". Thin Solid Films 515, n.º 9 (marzo de 2007): 4098–104. http://dx.doi.org/10.1016/j.tsf.2006.02.062.
Texto completoCourtney, Clay H., Bradley C. Smith y H. Henry Lamb. "Remote Plasma‐Enhanced Chemical Vapor Deposition of SiO2 Using Ar/ N 2 O and SiH4". Journal of The Electrochemical Society 145, n.º 11 (1 de noviembre de 1998): 3957–62. http://dx.doi.org/10.1149/1.1838898.
Texto completoWinkler, R., M. Capitelli, C. Gorse y J. Wilhelm. "Electron kinetics in a collision-dominated SiH4 rf plasma including self-consistent rf field strength calculation". Plasma Chemistry and Plasma Processing 10, n.º 3 (septiembre de 1990): 419–42. http://dx.doi.org/10.1007/bf01447201.
Texto completoMoiseev, T., D. Chrastina y G. Isella. "Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition". Plasma Chemistry and Plasma Processing 31, n.º 1 (5 de enero de 2011): 157–74. http://dx.doi.org/10.1007/s11090-010-9277-9.
Texto completoSedov, V. S., A. K. Martyanov, A. A. Khomich, S. S. Savin, V. V. Voronov, R. A. Khmelnitskiy, A. P. Bolshakov y V. G. Ralchenko. "Co-deposition of diamond and β-SiC by microwave plasma CVD in H2-CH4-SiH4 gas mixtures". Diamond and Related Materials 98 (octubre de 2019): 107520. http://dx.doi.org/10.1016/j.diamond.2019.107520.
Texto completoJonas, Stanisława, Jadwiga Konefał-Góral, Anna Małek, Stanisława Kluska y Zbigniew Grzesik. "Surface Modification of the Ti6Al4V Alloy with Silicon Carbonitride Layer Deposited by PACVD Method". High Temperature Materials and Processes 33, n.º 5 (29 de septiembre de 2014): 391–98. http://dx.doi.org/10.1515/htmp-2013-0059.
Texto completoRemy, J., G. Dingemans, W. W. Stoffels y G. M. W. Kroesen. "IN SITU IR OPTICAL MEASUREMENTS OF GAS PROPERTIES IN A CAPACITIVELY COUPLED RF Ar/SiH4 PLASMA". High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) 9, n.º 1 (2005): 159–71. http://dx.doi.org/10.1615/hightempmatproc.v9.i1.130.
Texto completoLee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park y Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition". Journal of The Electrochemical Society 145, n.º 8 (1 de agosto de 1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.
Texto completoZou, Xiangping, Xiaosu Yi y Zhenkui Fang. "Preparation and characteristics of thin film with wear-resistant behavior on HDPE surface polymerized by C2H2-H2-SiH4 plasma". Journal of Applied Polymer Science 70, n.º 8 (21 de noviembre de 1998): 1561–66. http://dx.doi.org/10.1002/(sici)1097-4628(19981121)70:8<1561::aid-app13>3.0.co;2-5.
Texto completoKessels, W. M. M., F. J. H. van Assche, P. J. van den Oever y M. C. M. van de Sanden. "The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma". Journal of Non-Crystalline Solids 338-340 (junio de 2004): 37–41. http://dx.doi.org/10.1016/j.jnoncrysol.2004.02.017.
Texto completoBertran, E., J. M. López-Villegas, J. L. Andújar, J. Campmany, A. Canillas y J. R. Morante. "Optical and electrical properties of a-SixNy:H films prepared by rf plasma using N2+SiH4 gas mixtures". Journal of Non-Crystalline Solids 137-138 (enero de 1991): 895–98. http://dx.doi.org/10.1016/s0022-3093(05)80264-9.
Texto completoJeong, Chaehwan, Seongjae Boo, Minsung Jeon y Koichi Kamisako. "Characterization of Intrinsic a-Si:H Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition for Solar Cell Applications". Journal of Nanoscience and Nanotechnology 7, n.º 11 (1 de noviembre de 2007): 4169–73. http://dx.doi.org/10.1166/jnn.2007.064.
Texto completoKim, Ho Jun y Jung Hwan Yoon. "Computational Fluid Dynamics Analysis of Particle Deposition Induced by a Showerhead Electrode in a Capacitively Coupled Plasma Reactor". Coatings 11, n.º 8 (23 de agosto de 2021): 1004. http://dx.doi.org/10.3390/coatings11081004.
Texto completoGatilova, L., S. Bouchoule, S. Guilet y G. Patriarche. "High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, n.º 2 (marzo de 2011): 020601. http://dx.doi.org/10.1116/1.3546024.
Texto completoLee, Sung-Eun y Young-Chun Park. "Low-temperature deposition of SiNx, SiOxNy, and SiOx films from plasma discharge of SiH4 for polycarbonate glazing applications". Thin Solid Films 636 (agosto de 2017): 34–39. http://dx.doi.org/10.1016/j.tsf.2017.04.022.
Texto completoKim, Byungwhan, Sanghee Kwon, Hyung-Su Woo, Jeong Kim y Sang Chul Jung. "Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma". Journal of Nanoscience and Nanotechnology 11, n.º 2 (1 de febrero de 2011): 1314–18. http://dx.doi.org/10.1166/jnn.2011.3405.
Texto completoMorgan, W. L. "A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4". Plasma Chemistry and Plasma Processing 12, n.º 4 (diciembre de 1992): 477–93. http://dx.doi.org/10.1007/bf01447255.
Texto completoKim, D. J., J. Y. Hwang, T. J. Kim, N. E. Lee y Y. D. Kim. "Effect of N2O/SiH4 flow ratio on properties of SiOx thin films deposited by low-temperature remote plasma-enhanced chemical deposition". Surface and Coatings Technology 201, n.º 9-11 (febrero de 2007): 5354–57. http://dx.doi.org/10.1016/j.surfcoat.2006.07.035.
Texto completoKosku, Nihan y Seiichi Miyazaki. "Insights into the high-rate growth of highly crystallized silicon films from inductively coupled plasma of H2-diluted SiH4". Thin Solid Films 511-512 (julio de 2006): 265–70. http://dx.doi.org/10.1016/j.tsf.2005.12.105.
Texto completoDas, Debajyoti, Debnath Raha y Koyel Bhattacharya. "Evolution of nc-Si Network and the Control of Its Growth by He/H2 Plasma Assistance in SiH4 at PECVD". Journal of Nanoscience and Nanotechnology 9, n.º 9 (1 de septiembre de 2009): 5614–21. http://dx.doi.org/10.1166/jnn.2009.1151.
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