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Artículos de revistas sobre el tema "Piezoresistor"

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Autor: Grafiati

Publicado: 6 de septiembre de 2023

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1

Li, Liang, Lei, Hong, Li, Li, Ghaffar, Li y Xiong. "Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer". Micromachines 10, n.º 10 (20 de septiembre de 2019): 629. http://dx.doi.org/10.3390/mi10100629.

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In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxial layer was good. The doping concentration and thickness of the epitaxial layer were measured by secondary ion mass spectrometry (SIMS) to be ~1.12 × 1019 cm−3 and ~1.1 μm, respectively. The 4H-SiC cantilever beam along crystal orientation was fabricated, and the fixed end of the cantilever beam was integrated with longitudinal and transverse p-type 4H-SiC piezoresistors. A good ohmic contact was formed between Ni/Ti/Al/Au and a p-type 4H-SiC piezoresistor under nitrogen environment annealing at 1050 °C for 5 min. The free end of the cantilever beam was forced to cause strain on the p-type 4H-SiC piezoresistor, and then the resistances were measured by a high precision multimeter. The experimental results illustrated that longitudinal and transverse gauge factors (GFs) of the p-type 4H-SiC piezoresistors were 26.7 and −21.5, respectively, within the strain range of 0–336με. In order to further verify the electro-mechanical coupling effect of p-type 4H-SiC, the piezoresistors on the beam were connected to the Wheatstone full-bridge circuit and the output changes were observed under cyclic loading of 0–0.5 N. The measuring results revealed that the transducer based on the 4H-SiC piezoresistive effect exhibited good linearity and hysteresis, which confirmed that p-type 4H-SiC has the potential for pressure or acceleration sensing applications.

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2

Zhang, Chi, Zheng You y Hu Huang. "Design and Simulation of Electromagnetic Two-Dimensional MOEMS Scanning Mirror". Key Engineering Materials 483 (junio de 2011): 185–89. http://dx.doi.org/10.4028/www.scientific.net/kem.483.185.

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This paper presents design methodology, dynamics simulation and fabrication process of a magnetically actuated two-dimensional MOEMS scanning mirror with piezoresistor sensors. In the device, the mirror has two gimbal structures with two integrated driving coils and piezoresistors for the control and measurement of the both tilt angles, respectively. The dynamic model is established and the FEM simulation results show that the resonant frequencies for both directions are 254Hz and 523Hz, respectively. The two-dimensional MOEMS scanning mirror has advantages of tilt angles control and measurement feedback for the both directions.

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3

Pashmforoush, Farzad. "Multiphysics simulation of piezoresistive pressure microsensor using finite element method". FME Transactions 49, n.º 1 (2021): 214–19. http://dx.doi.org/10.5937/fme2101214p.

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In this study, the electro-mechanical behavior of a specially designed highsensitive piezoresistor pressure microsensor was simulated using finite element method, through COMSOL multiphysics software. The mechanical deformation of the diaphragm and the distribution of electrical potential in the piezoresistive were evaluated for various pressure values. In order to determine the influence of the temperature sensitivity parameter, different temperature conditions were investigated. According to the obtained results, by increase of the applied pressure, the resistance of the piezoresistor decreased, while, the sensitivity increased. Also, it was observed that at constant pressure, as the temperature increases, the stress on the diaphragm surface decreases, indicating high stress distribution at the sides and the middle of the diaphragm at low temperatures such as -50 °C. Furthermore, the obtained results demonstrated that temperature variations were not very effective on the potential distribution in the piezoresistor. However, the temperature coefficient of sensitivity demonstrated an increasing tendency with increase of the temperature from -50 °C to 50 °C.

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4

Agarwal, R., R. Mukhiya, R. Sharma, M. K. Sharma y A. K. Goel. "Finite Element Method-based Design and Simulations of Micro-cantilever Platform for Chemical and Bio-sensing Applications". Defence Science Journal 66, n.º 5 (30 de septiembre de 2016): 485. http://dx.doi.org/10.14429/dsj.66.10702.

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Micro-electro-mechanical systems (MEMS)-based cantilever platform have capability for the detection of chemical and biological agents. This paper reports about the finite element method (FEM) based design and simulations of MEMS-based piezoresistor cantilever platform to be used for detection of chemical and biological toxic agents. Bulk micromachining technique is adopted for the realisation of the device structure. MEMS piezoresistive biosensing platforms are having potential for a field-based label-free detection of various types of bio-molecules. Using the MEMMECH module of CoventorWare® simulations are performed on the designed model of the device and it is observed that principal stress is maximum along the length (among other dimensions of the micro-cantilever) and remains almost constant for 90 per cent of the length of the micro-cantilever. The dimensions of piezoresistor are optimised and the output voltage vs. stress analysis for various lengths of the piezoresistor is performed using the MEMPZR module of the CoventorWare®.

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5

Gridchin, Victor A. y Michail A. Chebanov. "FEATURES OF MICRON-SIZED MESA-PIEZORESISTOR". Sensor Electronics and Microsystem Technologies 7, n.º 4 (23 de noviembre de 2010): 42–47. http://dx.doi.org/10.18524/1815-7459.2010.4.116318.

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6

Miller, Steve. "Instrumentals: Measuring a nematode with a piezoresistor". Analytical Chemistry 80, n.º 1 (enero de 2008): 28. http://dx.doi.org/10.1021/ac085997j.

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7

Du, Li Dong, Zhan Zhao, Shao Hua Wu y Zhen Fang. "Analysis Temperature Characteristics of Atmosphere Pressure Sensor Caused by Residual Gas". Key Engineering Materials 645-646 (mayo de 2015): 504–8. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.504.

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In this paper, temperature characteristic of a previous developed nickel-chromium (Ni-Cr) thin film atmosphere pressure sensor is analyzed caused by residual gas. As expected, the output signal of the previous fabricated sensor increases with atmosphere pressures. But when pressure load is fixed, the voltage-temperature characteristic is nonlinear. One factor of this effect is residual gas. Based on the pressure-displacement equation of membrane, the gas balance equation and Provided that the deformation of membrane is spherical crown, the relationship equation of relative change of piezoresistor is defined. Studying the First order derivative and second order derivative of relationship equation of relative change of piezoresistor, it is proved that the residual gas will affect the temperature characteristic of previous designed sensor.

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8

Petlacalco Ramírez, Héctor Eduardo, Salvador Alcántara Iniesta, Blanca Susana Soto Cruz y Jesús Israel Mejía Silva. "Evaluation of the Piezoresistivity of a Thin Film of ZnO Doped with Fluorine and Deposited via the Ultrasonic Spray Pyrolysis Technique for Applications in Micro/Nano-Electromechanical Sensors". Crystals 12, n.º 11 (11 de noviembre de 2022): 1607. http://dx.doi.org/10.3390/cryst12111607.

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In this study, thin films of zinc oxide doped with fluorine ZnO: F were deposited via ultrasonic spray pyrolysis (USP) with an atomic ratio of [F/Zn] in a starting solution of 15 at.% on borosilicate glass coverslips and SiO2/Si substrates. The structure, electrical resistivity, and thickness were obtained via X-ray diffraction, the four-point technique, and profilometry, respectively. A ZnO: F piezoresistor was modeled at the fixed end of the cantilever through lithography and chemical etching. A SiO2/Si cantilever structure was used to evaluate the piezoresistivity of a ZnO: F thin film, and temperature coefficient of resistance (TCR) measurements were performed in an electric furnace. The strain on the ZnO: F piezoresistor caused by the application of masses at the free end of the cantilever was determined using a theoretical equation, in addition to a simulation in the COMSOL Multiphysics 5.3a FEM (finite element method) software considering the dimensions and materials of the manufactured device. The ZnO: F thin films were hexagonal wurtzite (phase 002), with thicknesses in the range from 234 nm to 295 nm and with resistivities of the order of 10−2 Ω.cm. The ZnO: F thin-film piezoresistor showed a gauge factor (GF) of 12.7 and a TCR of −3.78 × 10−3 %/K up to 525 K, which are suitable properties for sensor development.

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9

Zhao, Li Bo, Xu Dong Fang, Yu Long Zhao, Zhuang De Jiang y Yong Li. "A High Pressure Sensor with Circular Diaphragm Based on MEMS Technology". Key Engineering Materials 483 (junio de 2011): 206–11. http://dx.doi.org/10.4028/www.scientific.net/kem.483.206.

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A pressure sensor in the range of 25 MPa with circular diaphragm is designed and fabricated, and the calibration experiments prove its excellent performance, which also reflects the correct choice of design after analyzing the effect of diaphragm dimension, location and shapes of piezoresistors. Circular diaphragms of different thickness and diameters are simulated to meet the pressure requirement of 25 MPa. It also displays the advantage of piezoresistive sensors over others and the difference characteristics between different types of piezoresistive sensors. And then the effect of piezoresistor location is analyzed and simulated to attain high accuracy and sensitivity after the circular diaphragm chip is packaged with borosilicate glass ring. The whole fabrication process of the chip is inexpensive and compatible with standard MEMS process. The experimental results show the developed high pressure sensor with the sensitivity of 2.533 mV/MPa has excellent performance, such as linearity of 0.08%FS, hysteresis of 0.03%FS, accuracy of 0.11%FS and repeatability of 0.03%FS under high temperature of 200 °C.

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10

Ansari, Mohd Zahid, Shashank Kumar, Sunil Kumar Prajapati y Chongdu Cho. "Modeling and Numerical Characterization of High Sensitive Microcantilever Biosensors with Parabolic Piezoresistor". Nano 13, n.º 05 (mayo de 2018): 1850055. http://dx.doi.org/10.1142/s1793292018500558.

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The biaxial and planar characteristics of surface stress produce a parabolic differential stress distribution inside the sensing zone of microcantilever biosensors, which can be used to design novel biosensors. The present work studies and compares the effect of parabolic and conventional rectangular-shaped piezoresistor placed inside this sensing zone on sensitivity of the biosensors. Two different cantilevers made of silicon and silicon dioxide with doped silicon as piezoresistor are used in five design variations. The cantilevers are characterized for their deflections, von Mises stresses, resonant frequencies and self-heating temperatures produced using ANSYS. Analytical models for predicting deflections in the cantilevers is presented and compared with numerical results obtained. Results show good compatibility between analytical and numerical values for deflection with a 4–5% average deviation and that parabolic designs have higher sensitivity.

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11

Radó, János, Gábor Battistig, Andrea Edit Pap, Péter Fürjes y Péter Földesy. "Thermal Noise Limited, Scalable Multi-Piezoresistor Readout Architecture". Proceedings 1, n.º 4 (11 de agosto de 2017): 598. http://dx.doi.org/10.3390/proceedings1040598.

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12

Tang, Lijun, Kairui Zhang, Shang Chen, Guojun Zhang y Guowen Liu. "MEMS inclinometer based on a novel piezoresistor structure". Microelectronics Journal 40, n.º 1 (enero de 2009): 78–82. http://dx.doi.org/10.1016/j.mejo.2008.06.080.

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13

Liu, Yan, Xin Jiang, Haotian Yang, Hongbo Qin y Weidong Wang. "Structural Engineering in Piezoresistive Micropressure Sensors: A Focused Review". Micromachines 14, n.º 8 (27 de julio de 2023): 1507. http://dx.doi.org/10.3390/mi14081507.

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The longstanding demands for micropressure detection in commercial and industrial applications have led to the rapid development of relevant sensors. As a type of long-term favored device based on microelectromechanical system technology, the piezoresistive micropressure sensor has become a powerful measuring platform owing to its simple operational principle, favorable sensitivity and accuracy, mature fabrication, and low cost. Structural engineering in the sensing diaphragm and piezoresistor serves as a core issue in the construction of the micropressure sensor and undertakes the task of promoting the overall performance for the device. This paper focuses on the representative structural engineering in the development of the piezoresistive micropressure sensor, largely concerning the trade-off between measurement sensitivity and nonlinearity. Functional elements on the top and bottom layers of the diaphragm are summarized, and the influences of the shapes and arrangements of the piezoresistors are also discussed. The addition of new materials endows the research with possible solutions for applications in harsh environments. A prediction for future tends is presented, including emerging advances in materials science and micromachining techniques that will help the sensor become a stronger participant for the upcoming sensor epoch.

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14

Boubekri, Rachida, Edmond Cambril, L. Couraud, Lorenzo Bernardi, Ali Madouri, David Martrou y Sébastien Gauthier. "High Frequency 3C-SiC AFM Cantilever Using Thermal Actuation and Metallic Piezoresistive Detection". Materials Science Forum 711 (enero de 2012): 80–83. http://dx.doi.org/10.4028/www.scientific.net/msf.711.80.

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One way to improve the force sensitivity of Atomic Force Microscopy (AFM) cantilevers is to increase their resonance frequency. SiC is an excellent material for that purpose due to its high Young’s modulus and low mass density. This size reduction makes conventional optical motion detection methods inappropriate. Here, we introduce self-sensing, self-excited high frequency AFM cantilevers. The motion detection is based on the measurement of a metallic piezoresistor incorporated in the cantilever. The motion excitation is performed by electrothermal actuation using another metallic circuit. Cantilevers with sizes as low as 4 μm in length, 1.2 μm in width and 0.5 μm in thickness were realized by using different steps of e-beam lithography, deposition of thin gold films to pattern the piezoresistor and the electrothermal actuation electrode. Dry etching SF6plasma was used for etching the SiC cantilever and TMAH solution heated to 80°C to release the cantilever. In this case, a thigh control of underetching, which reduces the cantilever resonance frequency was required.

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15

Dou, Chuan Guo, Yan Hong Wu, Heng Yang y Xin Xin Li. "Design, Fabrication and Characterization of a 5x5 Array of Piezoresistive Stress and Temperature Sensors". Key Engineering Materials 503 (febrero de 2012): 43–48. http://dx.doi.org/10.4028/www.scientific.net/kem.503.43.

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This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.

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16

Ansari, Mohd Zahid y Chongdu Cho. "On self-heating in piezoresistive microcantilevers with short piezoresistor". Journal of Physics D: Applied Physics 44, n.º 28 (27 de junio de 2011): 285402. http://dx.doi.org/10.1088/0022-3727/44/28/285402.

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17

Shor, J. S., D. Goldstein y A. D. Kurtz. "Characterization of n-type beta -SiC as a piezoresistor". IEEE Transactions on Electron Devices 40, n.º 6 (junio de 1993): 1093–99. http://dx.doi.org/10.1109/16.214734.

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18

Beddiaf, Abdelaziz, Fouad Kerrour y Salah Kemouche. "A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors". International Journal of Electrical and Computer Engineering (IJECE) 6, n.º 3 (1 de junio de 2016): 1223. http://dx.doi.org/10.11591/ijece.v6i3.9869.

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Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of heat transfer equation considering the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.

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19

Beddiaf, Abdelaziz, Fouad Kerrour y Salah Kemouche. "A Numerical Model of Joule Heating in Piezoresistive Pressure Sensors". International Journal of Electrical and Computer Engineering (IJECE) 6, n.º 3 (1 de junio de 2016): 1223. http://dx.doi.org/10.11591/ijece.v6i3.pp1223-1232.

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Thermal drift caused by Joule heating in piezoresistive pressure sensors affects greatly the results in the shift of the offset voltage of the such sensors. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristic drift. The impact of Joule heating in a pressure sensor has been studied. The study involves the solution of heat transfer equation considering the conduction in Cartesian coordinates for the transient regime using Finite Difference Method. We determine how the temperature affects the sensor during the applying a supply voltage. For this, the temperature rise generated by Joule heating in piezoresistors has been calculated for different geometrical parameters of the sensor as well as for different operating time. It is observed that Joule heating leads to important rise temperature in the piezoresistor and, hence, causes drift in the output voltage variations in a sensor during its operated in a prolonged time. This paper put emphasis on the geometric influence parameters on these characteristics to optimize the sensor performance. The optimization of geometric parameters of sensor allows us to reducing the internal heating effect. Results showed also that low bias voltage should be applied for reducing Joule heating.

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20

Kan, Tetsuo, Kiyoshi Matsumoto y Isao Shimoyama. "Piezoresistor-equipped fluorescence-based cantilever probe for near-field scanning". Review of Scientific Instruments 78, n.º 8 (agosto de 2007): 083106. http://dx.doi.org/10.1063/1.2774824.

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21

Ivanov, Tzv, T. Gotszalk, T. Sulzbach, I. Chakarov y I. W. Rangelow. "AFM cantilever with ultra-thin transistor-channel piezoresistor: quantum confinement". Microelectronic Engineering 67-68 (junio de 2003): 534–41. http://dx.doi.org/10.1016/s0167-9317(03)00111-4.

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22

Wang, Weidong, Qingda Xu, Guojun Zhang, Yuqi Lian, Lansheng Zhang, Xiaoyong Zhang, Yiming Shi, Sicun Duan y Renxin Wang. "A bat-shape piezoresistor electronic stethoscope based on MEMS technology". Measurement 147 (diciembre de 2019): 106850. http://dx.doi.org/10.1016/j.measurement.2019.106850.

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23

Yang, Qi, Albert Lee, R. Timothy Bentley y Hyowon Lee. "Piezoresistor-Embedded Multifunctional Magnetic Microactuators for Implantable Self-Clearing Catheter". IEEE Sensors Journal 19, n.º 4 (15 de febrero de 2019): 1373–78. http://dx.doi.org/10.1109/jsen.2018.2880576.

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24

Lin, Ji-Tzuoh, Pranoy Deb Shuvra, Jerry A. Yang, Shamus McNamara, Kevin Walsh y Bruce Alphenaar. "Buckled beam mechanical memory using an asymmetric piezoresistor for readout". Journal of Micromechanics and Microengineering 30, n.º 7 (18 de mayo de 2020): 075006. http://dx.doi.org/10.1088/1361-6439/ab870c.

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25

Tian, Yuan, Yi Liu, Yang Wang, Jia Xu y Xiaomei Yu. "A Flexible PI/Si/SiO2 Piezoresistive Microcantilever for Trace-Level Detection of Aflatoxin B1". Sensors 21, n.º 4 (5 de febrero de 2021): 1118. http://dx.doi.org/10.3390/s21041118.

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In this paper, a polyimide (PI)/Si/SiO2-based piezoresistive microcantilever biosensor was developed to achieve a trace level detection for aflatoxin B1. To take advantage of both the high piezoresistance coefficient of single-crystal silicon and the small spring constant of PI, the flexible piezoresistive microcantilever was designed using the buried oxide (BOX) layer of a silicon-on-insulator (SOI) wafer as a bottom passivation layer, the topmost single-crystal silicon layer as a piezoresistor layer, and a thin PI film as a top passivation layer. To obtain higher sensitivity and output voltage stability, four identical piezoresistors, two of which were located in the substrate and two integrated in the microcantilevers, were composed of a quarter-bridge configuration wheatstone bridge. The fabricated PI/Si/SiO2 microcantilever showed good mechanical properties with a spring constant of 21.31 nN/μm and a deflection sensitivity of 3.54 × 10−7 nm−1. The microcantilever biosensor also showed a stable voltage output in the Phosphate Buffered Saline (PBS) buffer with a fluctuation less than 1 μV @ 3 V. By functionalizing anti-aflatoxin B1 on the sensing piezoresistive microcantilever with a biotin avidin system (BAS), a linear aflatoxin B1 detection concentration resulting from 1 ng/mL to 100 ng/mL was obtained, and the toxic molecule detection also showed good specificity. The experimental results indicate that the PI/Si/SiO2 flexible piezoresistive microcantilever biosensor has excellent abilities in trace-level and specific detections of aflatoxin B1 and other biomolecules.

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26

Yang, Sheng Bing, Shuai Wang, Yan Xia Su, Feng Xu y Zhen Zhen Li. "Compensation Research of Engine Oil Pressure Sensor Based on MEMS". Applied Mechanics and Materials 325-326 (junio de 2013): 765–68. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.765.

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The engine lubrication system plays an important role in the engine working process. Engine electronic oil pressure sensor based on piezoresistor pressure sensor MEMS with contactless measure technology is designed in this paper. This sensor includes a signal disposal chip which provides zero point pressure compensation, temperature compensation and sensitivity compensation and a chip which is used to adjust the duty cycle according to the output voltage of the signal disposal chip. The experiments show that the Engine electronic oil pressure sensor works well with excellent characteristic.

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27

Sindhanaiselvi, D., R. Ananda Natarajan y T. Shanmuganantham. "Performance Analysis of Sculptured Diaphragm for Low Pressure MEMS Sensors". Applied Mechanics and Materials 592-594 (julio de 2014): 2193–98. http://dx.doi.org/10.4028/www.scientific.net/amm.592-594.2193.

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Sculptured or Bossed diaphragm is a specialized geometry with rigid center or boss. This paper presents the outcome of design approaches of sculptured diaphragm structure for low pressure applications. The simulation results are obtained using Intellisuite MEMS CAD design tool. The results indicate that sculptured diaphragm are designed with minimum thickness, compensating the large (a/h) ratio with local stiffening by means of rigid center and better linearity. Further, the maximum stress regions are analyzed for fixing the position of the piezoresistor. Finally, the sensitivity is improved by using the Silicon-On-Insulator (SOI) diaphragms.

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28

Yin, Tsung-I. y Tien Anh Nguyen. "Molecules sensing layer design of piezoresistive cantilever sensor for higher surface stress sensitivity". Vietnam Journal of Mechanics 34, n.º 4 (28 de noviembre de 2012): 311–20. http://dx.doi.org/10.15625/0866-7136/34/4/2345.

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This paper reports on molecular sensing layer design of a piezoresistive cantilever sensor for higher surface stress sensitivity. The proposed analyses show that the previous understanding of piezoresistive cantilevers for surface stress measurement requires reconsideration for a cantilever utilizing polycrystalline silicon as a piezoresistor. The integration of the molecular sensing layer stripe pattern design to the cantilever effectively improves the piezoresistive output and utilizes the full sensing area of the cantilever surface. The proposed sensing layer design can be effectively integrated to current piezoresistive cantilever sensors to improve sensor performance in biochemical assays.

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29

Barlian, A. A., N. Harjee y B. L. Pruitt. "Sidewall epitaxial piezoresistor process and characterisation for in-plane force sensing applications". Micro & Nano Letters 4, n.º 4 (1 de diciembre de 2009): 204–9. http://dx.doi.org/10.1049/mnl.2009.0075.

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30

Mohanasundaram, S. M., Rudra Pratap y Arindam Ghosh. "Two orders of magnitude increase in metal piezoresistor sensitivity through nanoscale inhomogenization". Journal of Applied Physics 112, n.º 8 (15 de octubre de 2012): 084332. http://dx.doi.org/10.1063/1.4761817.

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31

He, Gao Fa y Wei Gao. "High-Aspect-Ratio and Self-Sensing Probe for AMF Based on Micro-Fabrication". Advanced Materials Research 317-319 (agosto de 2011): 1645–48. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.1645.

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The cantilever with a high-aspect-ratio and long probe is a key sub-system of the atomic force microscopes (AFMs) used to measure the surface aspect of the mechanical and optical devices. In this paper, a novel cantilever with a 50μm-length-probe and self-sensing piezoresistor was designed; and based on the micro fabrication technology, the processes were planned. The dynamic and static characteristics of the cantilever were analyzed on theory and finite element method (FEM). The results show that the length of the probe has no effect on the cantilever’s dynamic and static performance.

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32

Vergara, Andrea, Takashiro Tsukamoto, Weileun Fang y Shuji Tanaka. "PZT THIN FILM ACTUATOR WITH INTEGRATED BURIED PIEZORESISTOR FOR HIGH STABILITY POSITION CONTROL". Proceedings of Conference of Tohoku Branch 2020.55 (2020): 181_paper. http://dx.doi.org/10.1299/jsmeth.2020.55.181_paper.

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33

Kale, N. S., S. Nag, R. Pinto y V. R. Rao. "Fabrication and Characterization of a Polymeric Microcantilever With an Encapsulated Hotwire CVD Polysilicon Piezoresistor". Journal of Microelectromechanical Systems 18, n.º 1 (febrero de 2009): 79–87. http://dx.doi.org/10.1109/jmems.2008.2008577.

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34

Kim, Young-Sik, Hyo-Jin Nam, Seong-Moon Cho, Jae-Wan Hong, Dong-Chun Kim y Jong U. Bu. "PZT cantilever array integrated with piezoresistor sensor for high speed parallel operation of AFM". Sensors and Actuators A: Physical 103, n.º 1-2 (enero de 2003): 122–29. http://dx.doi.org/10.1016/s0924-4247(02)00311-4.

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35

Kumar, S. Santosh y B. D. Pant. "Effect of piezoresistor configuration on output characteristics of piezoresistive pressure sensor: an experimental study". Microsystem Technologies 22, n.º 4 (4 de febrero de 2015): 709–19. http://dx.doi.org/10.1007/s00542-015-2451-5.

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36

Gamil, Mohammed, Osamu Tabata, Koichi Nakamura, Ahmed M. R. Fath El-Bab y Ahmed A. El-Moneim. "Investigation of a New High Sensitive Micro-Electromechanical Strain Gauge Sensor Based on Graphene Piezoresistivity". Key Engineering Materials 605 (abril de 2014): 207–10. http://dx.doi.org/10.4028/www.scientific.net/kem.605.207.

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A new strain gauge based on graphene piezoresistivity was fabricated by a novel low cost technique which suits mass production of micro piezoresistor sensors. The strain gauge consists of a monolayer graphene film made by chemical vapor deposition on a copper foil surface, and transferred to Si/SiO2 surface by using a polymethyl-methacrylate (PMMA) assisted transfer method. The film is shaped by laser machine to work as a conductive-piezoresistive material between two deposited electrical silver electrodes. This method of fabrication provides a high productivity due to the homogeneous distribution of the graphene monolayer all over the Si/SiO2 surface. The experimentally measured gauge factor of graphene based device is 255, which promises a new strain gauge sensor of high sensitivity.

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37

Rahim, Rosminazuin A., Badariah Bais y Burhanuddin Yeop Majlis. "Hybrid Simulation Approach on MEMS Piezoresistive Microcantilever Sensor for Biosensing Applications". Advanced Materials Research 74 (junio de 2009): 283–86. http://dx.doi.org/10.4028/www.scientific.net/amr.74.283.

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This paper uses a hybrid simulation approach in CoventorWare design environment which combines finite element analysis and circuit simulation modeling to obtain the optimal performance of piezoresistive microcantilever sensor. A 250 μm x 100 μm x 1 μm SiO2 cantilever integrated with 0.2 μm thick Si piezoresistor were used in this study. A finite element analysis on piezoresistive microcantilever sensor was conducted in CoventorWare Analyzer environment which incorporates MemMech and MemPZR modules. The sensor sensitivity was obtained by measuring resistivity changes in piezoresistive material in response to surface stress changes of microcantilever. The simulation results were later integrated with system-level simulation solver called Architect to enable the optimization of the sensor circuit output. It involves a hybrid approach which uniquely combined FEM analysis and piezoresistive modeling using circuit simulation environment which results in optimal performance of MEMS piezoresistive microcantilever sensor.

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38

Shi, Gui Xiong, Guo Jun Zhang, Xi Bao Liu, Xiao Yao Wang y Jiao Xu. "MEMS Vector Hydrophone Structual Error Analysis and Testing". Applied Mechanics and Materials 110-116 (octubre de 2011): 4465–70. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.4465.

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In this paper, we analysis the working principle of a cilium-type MEMS vector hydrophone, by analyzing we obtained the errors of the vector micro-sensor are deviations from column cilium. Since the structure is mainly picking up sound vibrations by the cilium, the piezoresistor which on the beams connected by Wheatstone bridge circuit will output the signals, so the deviation of cilium cylinder have greater impact the sensitivity in both directions of vector hydrophone. Through theoretical calculation and finite element simulation of the sensitive structure of the error analysis. By the structure of the hydrophone error test ,we obtained the sensitivity of X direction is 0.755mv / g, the sensitivity of Y direction is 0.683mv / g, The relative sensitivity error of two directions is 9.5% which is close to the simulation results. Finally, this paper give a solution to the error. (Abstract)

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39

Vetrivel, S., Ribu Mathew y A. Ravi Sankar. "Design and optimization of a doubly clamped piezoresistive acceleration sensor with an integrated silicon nanowire piezoresistor". Microsystem Technologies 23, n.º 8 (30 de noviembre de 2016): 3525–36. http://dx.doi.org/10.1007/s00542-016-3219-2.

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40

Wong, Wah Seng, Ishak Abdul Azid, Kamarulazizi Ibrahim y Mutharasu Devarajan. "Fabrication of micropressure sensor using SU-8/silver as piezoresistor and overhead projector transparency as substrate". Journal of Micro/Nanolithography, MEMS, and MOEMS 13, n.º 4 (6 de noviembre de 2014): 043009. http://dx.doi.org/10.1117/1.jmm.13.4.043009.

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41

Kandpal, Manoj, Satya Narayan Behera, Jaspreet Singh, Vijay Palaparthy y Surinder Singh. "Residual stress compensated silicon nitride microcantilever array with integrated poly-Si piezoresistor for gas sensing applications". Microsystem Technologies 26, n.º 4 (13 de noviembre de 2019): 1379–85. http://dx.doi.org/10.1007/s00542-019-04670-2.

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42

Shi, Xiaoqing, Yulan Lu, Bo Xie, Chao Xiang, Junbo Wang, Deyong Chen y Jian Chen. "A Double-Ended Tuning Fork Based Resonant Pressure Micro-Sensor Relying on Electrostatic Excitation and Piezoresistive Detection". Proceedings 2, n.º 13 (27 de noviembre de 2018): 875. http://dx.doi.org/10.3390/proceedings2130875.

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This study proposes a microfabricated resonant pressure sensor based on electrostatic excitation and low-impedance piezoresistive detection in which a pair of double-ended tuning forks were utilized as resonators for differential outputs. In operations, targeted pressures deforms the pressure-sensitive membrane, resulting in stress variations of two resonators, leading to shifts of the intrinsic resonant frequencies, which were then measured piezoresistively. The developed microfabricated resonant pressure sensor was fabricated using simple SOI-MEMS processes and quantified in both open-loop and closed-loop manners, where the quality factor, differential sensitivity and linear correlation coefficient were quantified as higher than 10,000, 79.4 Hz/kPa and 0.99999, respectively. Compared to previous resonant piezoresistive sensors, the developed device leveraged single-crystal silicon as the piezoresistor, with advantages in simple sensing structures and fabrication steps. Furthermore, the differential setup was adopted in this study which can further improve the performances of the developed sensors.

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43

Fang, Peng, Yuhui Peng, Wan-Hua Lin, Yingying Wang, Shuting Wang, Xiaoqing Zhang, Kai Wu y Guanglin Li. "Wrist Pulse Recording With a Wearable Piezoresistor-Piezoelectret Compound Sensing System and Its Applications in Health Monitoring". IEEE Sensors Journal 21, n.º 18 (15 de septiembre de 2021): 20921–30. http://dx.doi.org/10.1109/jsen.2021.3094845.

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44

Meena, K. V., Ribu Mathew, Jyothi Leelavathi y A. Ravi Sankar. "Performance comparison of a single element piezoresistor with a half-active Wheatstone bridge for miniaturized pressure sensors". Measurement 111 (diciembre de 2017): 340–50. http://dx.doi.org/10.1016/j.measurement.2017.07.052.

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45

Li, Hongfang, Yahui Li, Kai Wang, Liyan Lai, Xiaoxue Xu, Bin Sun, Zhuoqing Yang y Guifu Ding. "Ultra-high sensitive micro-chemo-mechanical hydrogen sensor integrated by palladium-based driver and high-performance piezoresistor". International Journal of Hydrogen Energy 46, n.º 1 (enero de 2021): 1434–45. http://dx.doi.org/10.1016/j.ijhydene.2020.10.013.

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46

Maflin Shaby, S. y A. Vimala Juliet. "Analysis and Optimization of Sensitivity of a MEMS Peizoresistive Pressure Sensor". Advanced Materials Research 548 (julio de 2012): 652–56. http://dx.doi.org/10.4028/www.scientific.net/amr.548.652.

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This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. The polysilicon nanowire pressure sensor has a circular diaphragm of 500nm radius and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the circular shaped diaphragm of a polysilicon nanowire Piezoresistive pressure sensor. The best position to place the Polysilicon nanowires to receive maximum stress was also considered during the design process..The fabricated polysilicon nanowire has high sensitivity of about 133 mV/VKPa.

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47

Ye, Yizhou, Shu Wan y Xuefeng He. "Effect of Wind-Induced Vibration on Measurement Range of Microcantilever Anemometer". Micromachines 13, n.º 5 (30 de abril de 2022): 720. http://dx.doi.org/10.3390/mi13050720.

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In this paper, the effect of wind-induced vibration on measurement range of microcantilever anemometer is investigated for the first time. The microcantilever anemometer is composed of a flexible substrate and a piezoresistor. The wind speed can be detected through the airflow-induced deformation in the flexible substrate. Previous work indicated that the flexible substrate vibrates violently once the wind speed exceeds a critical value, resulting in severe output jitter. This wind-induced vibration limits the measurement range of the anemometer, and the relationship between the anemometer measurement range and its structural parameters has not been explored systematically. Therefore, this paper aims to reveal this relationship theoretically and experimentally, demonstrating that a shorter and thicker cantilever with larger stiffness can effectively suppress the wind-induced vibration, leading to the critical speed rising. By eliminating the wind-induced vibration, the measurement range of the microcantilever anemometer can be increased by up to 697%. These results presented in this paper can pave the way for the design and fabrication of wide-range mechanical anemometers.

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48

Tian, Yuan, Rui Zhao, Yi Liu y Xiaomei Yu. "A Low Spring Constant Piezoresistive Microcantilever for Biological Reagent Detection". Micromachines 11, n.º 11 (12 de noviembre de 2020): 1001. http://dx.doi.org/10.3390/mi11111001.

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This paper introduces a piezoresistive microcantilever with a low spring constant. The microcantilever was fabricated with titanium (Ti) as the piezoresistor, a low spring constant polyimide (PI) layer, and a thin silicon oxide (SiO2) layer as the top and bottom passive layers, respectively. Excellent mechanical performances with the spring constant of 0.02128 N/m and the deflection sensitivity (∆V/V)/∆z of 1.03 × 10−7 nm−1 were obtained. The output voltage fluctuation of a Wheatstone bridge, which consists of four piezoresistive microcantilevers, is less than 3 μV@3 V in a phosphate buffered saline (PBS) environment. A microcantilever aptasensor was then developed through functionalizing the microcantilevers with a ricin aptamer probe, and detections on ricin with concentrations of 10, 20, 50 and 100 ng/mL were successfully realized. A good specificity was also confirmed by using bovine serum albumin (BSA) as a blank control. The experiment results show that the Ti and PI-based microcantilever has great prospects for ultrasensitive biochemical molecule detections with high reliability and specificity.

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49

Sang, Sheng Bo, Chen Yang Xue, Wen Dong Zhang y Bin Zhen Zhang. "Raman Quantitate Stress in Nano-Thin Film of MEMS". Solid State Phenomena 121-123 (marzo de 2007): 943–46. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.943.

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The stress is an important parameter of nano-thin film of the micro-structure. It is essential for the successful design and operation of many micro-machined devices. In this paper, the experiment idea that using Raman spectrometer to quantitate the stress in the nano-thin film of MEMS was put forward and the formula of the stress of Si and GaAs crystal was derived. In the experiment, the Si nano-thin film and AlAs/GaAs nano-thin film on GaAs substrate were grown by MBE (molecular beam epitaxy). The uniaxial pressure is exerted to nano-thin film by using the pressurization instrument designed by ourselves. Raman spectrums of the nano-thin film of MEMS are measured with the pressure exerted varying. Through the processing of the experiment data, the error of measurement to stress in nano-thin film is maximally 0.9% to Si and 7.5% to GaAs. So, Raman spectrum can be used to accurately quantitate stress in nano-thin film of MEMS in order to assessment of the reliability of micromachined structure. And the method can be applied to quantitate the stress in the experiment of testing the piezoresistor effect of double-quantum-well nano-thin film.

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50

Noh, Ji-Yeon, Mirae Kim y Jong-Man Kim. "Effect of Metal Film Thickness on Strain-Sensing Performance of Crack-Based Stretchable Hybrid Piezoresistive Electrode". Korean Journal of Metals and Materials 60, n.º 12 (5 de diciembre de 2022): 933–39. http://dx.doi.org/10.3365/kjmm.2022.60.12.933.

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In recent decades, many research efforts have been devoted to developing high-performance stretchable strain sensors due to their potential for application in various emerging wearable sensor systems. This work presents a facile yet highly efficient way of modulating the sensing performance of a thin metal film/conductive composite hybrid piezoresistor-based stretchable strain sensor by simply controlling the metal film thickness. The hybrid strain sensor can be simply fabricated by sputtering a thin platinum (Pt) film onto a silver nanowire (AgNW)/dragon skin (DS) composite substrate prepared via a facile embed-and-transfer process in a reproducible manner. The density of the network-shaped mechanical crack induced in the Pt film tended to decrease with increasing the Pt thickness, thereby leading to a higher gauge factor of the sensor. The fabricated hybrid strain sensor also exhibited a large stretchability of 150% owing to its electrical robustness under strain, based on the unique morphology, formed of the network-shaped Pt crack and AgNW percolation network embedded in the DS matrix. Thanks to the balanced strain-sensing performance of the hybrid strain sensor in conjunction with large stretchability, the device was successfully demonstrated as a wearable human-activity monitoring solution that can monitor a wide range of human motions in real time.

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