Artículos de revistas sobre el tema "PCM memory"
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Arjomand, Mohammad, Amin Jadidi, Mahmut T. Kandemir, Anand Sivasubramaniam y Chita R. Das. "HL-PCM: MLC PCM Main Memory with Accelerated Read". IEEE Transactions on Parallel and Distributed Systems 28, n.º 11 (1 de noviembre de 2017): 3188–200. http://dx.doi.org/10.1109/tpds.2017.2705125.
Texto completoPriya, Bhukya Krishna y N. Ramasubramanian. "Improving the Lifetime of Phase Change Memory by Shadow Dynamic Random Access Memory". International Journal of Service Science, Management, Engineering, and Technology 12, n.º 2 (marzo de 2021): 154–68. http://dx.doi.org/10.4018/ijssmet.2021030109.
Texto completoMacyna, Wojciech y Michal Kukowski. "Adaptive Merging on Phase Change Memory". Fundamenta Informaticae 188, n.º 2 (15 de marzo de 2023): 103–26. http://dx.doi.org/10.3233/fi-222144.
Texto completoJabarov, Elkhan, Byung-Won On, Gyu Choi y Myong-Soon Park. "R-Tree for phase change memory". Computer Science and Information Systems 14, n.º 2 (2017): 347–67. http://dx.doi.org/10.2298/csis160620008j.
Texto completoHong, Jeong Beom, Young Sik Lee, Yong Wook Kim y Tae Hee Han. "Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory". Electronics 9, n.º 4 (9 de abril de 2020): 626. http://dx.doi.org/10.3390/electronics9040626.
Texto completoDing, Feilong, Baokang Peng, Xi Li, Lining Zhang, Runsheng Wang, Zhitang Song y Ru Huang. "A review of compact modeling for phase change memory". Journal of Semiconductors 43, n.º 2 (1 de febrero de 2022): 023101. http://dx.doi.org/10.1088/1674-4926/43/2/023101.
Texto completoTang, Pu, Jing Xiao y Ming Tao. "Thermal Crosstalk Analysis of Phase Change Memory Considering Thermoelectric Effect and Thermal Boundary Resistance". Journal of Physics: Conference Series 2624, n.º 1 (1 de octubre de 2023): 012020. http://dx.doi.org/10.1088/1742-6596/2624/1/012020.
Texto completoStern, Keren, Yair Keller, Christopher M. Neumann, Eric Pop y Eilam Yalon. "Temperature-dependent thermal resistance of phase change memory". Applied Physics Letters 120, n.º 11 (14 de marzo de 2022): 113501. http://dx.doi.org/10.1063/5.0081016.
Texto completoSun, Hao, Lan Chen, Xiaoran Hao, Chenji Liu y Mao Ni. "An Energy-Efficient and Fast Scheme for Hybrid Storage Class Memory in an AIoT Terminal System". Electronics 9, n.º 6 (17 de junio de 2020): 1013. http://dx.doi.org/10.3390/electronics9061013.
Texto completoShin, Dongsuk, Hakbeom Jang, Kiseok Oh y Jae W. Lee. "An Energy-Efficient DRAM Cache Architecture for Mobile Platforms With PCM-Based Main Memory". ACM Transactions on Embedded Computing Systems 21, n.º 1 (31 de enero de 2022): 1–22. http://dx.doi.org/10.1145/3451995.
Texto completoHo, Chien-Chung, Yu-Ming Chang, Yuan-Hao Chang, Hsiu-Chang Chen y Tei-Wei Kuo. "Write-aware memory management for hybrid SLC-MLC PCM memory systems". ACM SIGAPP Applied Computing Review 17, n.º 2 (3 de agosto de 2017): 16–26. http://dx.doi.org/10.1145/3131080.3131082.
Texto completoHong, Feng, Jianquan Zhang, Shigui Qi y Zheng Li. "PCM-2R: Accelerating MLC PCM Writes via Data Reshaping and Remapping". Mobile Information Systems 2022 (16 de julio de 2022): 1–19. http://dx.doi.org/10.1155/2022/9552517.
Texto completoDing, Feilong, Deqi Dong, Yihan Chen, Xinnan Lin y Lining Zhang. "Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention". Nanomaterials 11, n.º 11 (3 de noviembre de 2021): 2945. http://dx.doi.org/10.3390/nano11112945.
Texto completoAntolini, Alessio, Eleonora Franchi Scarselli, Antonio Gnudi, Marcella Carissimi, Marco Pasotti, Paolo Romele y Roberto Canegallo. "Characterization and Programming Algorithm of Phase Change Memory Cells for Analog In-Memory Computing". Materials 14, n.º 7 (26 de marzo de 2021): 1624. http://dx.doi.org/10.3390/ma14071624.
Texto completoArjomand, Mohammad, Mahmut T. Kandemir, Anand Sivasubramaniam y Chita R. Das. "Boosting access parallelism to PCM-based main memory". ACM SIGARCH Computer Architecture News 44, n.º 3 (12 de octubre de 2016): 695–706. http://dx.doi.org/10.1145/3007787.3001211.
Texto completoLee, Jung-Hoon. "PCM Main Memory for Low Power Embedded System". IEMEK Journal of Embedded Systems and Applications 10, n.º 6 (31 de diciembre de 2015): 391–97. http://dx.doi.org/10.14372/iemek.2015.10.6.391.
Texto completoJung, Bo-Sung y Jung-Hoon Lee. "High Performance PCM&DRAM Hybrid Memory System". IEMEK Journal of Embedded Systems and Applications 11, n.º 2 (30 de abril de 2016): 117–23. http://dx.doi.org/10.14372/iemek.2016.11.2.117.
Texto completoHARNSOONGNOEN, SANCHAI, CHIRANUT SA-NGIAMSAK y APIRAT SIRITARATIWAT. "OPTIMIZATION OF PHASE CHANGE MEMORY WITH THIN METAL INSERTED LAYER ON MATERIAL PROPERTIES". International Journal of Modern Physics B 23, n.º 17 (10 de julio de 2009): 3625–30. http://dx.doi.org/10.1142/s0217979209063080.
Texto completoPriya, Bhukya Krishna y N. Ramasubramanian. "Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal". Journal of Circuits, Systems and Computers 29, n.º 14 (11 de marzo de 2020): 2050219. http://dx.doi.org/10.1142/s0218126620502199.
Texto completoAkbarzadeh, Negar, Sina Darabi, Atiyeh Gheibi-Fetrat, Amir Mirzaei, Mohammad Sadrosadati y Hamid Sarbazi-Azad. "H3DM: A High-bandwidth High-capacity Hybrid 3D Memory Design for GPUs". Proceedings of the ACM on Measurement and Analysis of Computing Systems 8, n.º 1 (16 de febrero de 2024): 1–28. http://dx.doi.org/10.1145/3639038.
Texto completoMohseni, Milad, Ahmed Alkhayyat, P. Balaji Srikaanth, Ali Jawad Alrubaie, Arnold C. Alguno, Rey Y. Capangpangan y Bhupesh Kumar Singh. "Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM)". Journal of Nanomaterials 2022 (9 de septiembre de 2022): 1–20. http://dx.doi.org/10.1155/2022/6822884.
Texto completoLewis, Matthew y Lucien N. Brush. "Impact of solid–liquid interfacial thermodynamics on phase-change memory RESET scaling". Nanotechnology 33, n.º 20 (21 de febrero de 2022): 205204. http://dx.doi.org/10.1088/1361-6528/ac512c.
Texto completoLei, Xin-Qing, Jia-He Zhu, Da-Wei Wang y Wen-Sheng Zhao. "Design for Ultrahigh-Density Vertical Phase Change Memory: Proposal and Numerical Investigation". Electronics 11, n.º 12 (8 de junio de 2022): 1822. http://dx.doi.org/10.3390/electronics11121822.
Texto completoGonzalez-Alberquilla, Rodrigo, Fernando Castro, Luis Pinuel y Francisco Tirado. "CEPRAM: Compression for Endurance in PCM RAM". Journal of Circuits, Systems and Computers 26, n.º 11 (3 de abril de 2017): 1750167. http://dx.doi.org/10.1142/s0218126617501675.
Texto completoQiao, Yang, Jin Zhao, Haodong Sun, Zhitang Song, Yuan Xue, Jiao Li y Sannian Song. "Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory". Nanomaterials 12, n.º 12 (10 de junio de 2022): 1996. http://dx.doi.org/10.3390/nano12121996.
Texto completoZhang, Zhong Hua, San Nian Song, Zhi Tang Song, Le Li, Lan Lan Shen, Tian Qi Guo, Yan Cheng et al. "Performance Improvement of Phase Change Memory Cell by Using a Tantalum Pentoxide Buffer Layer". Materials Science Forum 848 (marzo de 2016): 425–29. http://dx.doi.org/10.4028/www.scientific.net/msf.848.425.
Texto completoSong, Zhitang, Daolin Cai, Yan Cheng, Lei Wang, Shilong Lv, Tianjiao Xin y Gaoming Feng. "12-state multi-level cell storage implemented in a 128 Mb phase change memory chip". Nanoscale 13, n.º 23 (2021): 10455–61. http://dx.doi.org/10.1039/d1nr00100k.
Texto completoYin, You y Sumio Hosaka. "Crystal Growth Suppression by N-Doping into Chalcogenide for Application to Next-Generation Phase Change Memory". Key Engineering Materials 497 (diciembre de 2011): 101–5. http://dx.doi.org/10.4028/www.scientific.net/kem.497.101.
Texto completoKim, Jeong-Geun, Shin-Dug Kim y Su-Kyung Yoon. "Q-Selector-Based Prefetching Method for DRAM/NVM Hybrid Main Memory System". Electronics 9, n.º 12 (16 de diciembre de 2020): 2158. http://dx.doi.org/10.3390/electronics9122158.
Texto completoYun, Ji-Tae, Su-Kyung Yoon, Jeong-Geun Kim, Bernd Burgstaller y Shin-Dug Kim. "Regression Prefetcher with Preprocessing for DRAM-PCM Hybrid Main Memory". IEEE Computer Architecture Letters 17, n.º 2 (1 de julio de 2018): 163–66. http://dx.doi.org/10.1109/lca.2018.2841835.
Texto completoPourshirazi, Bahareh, Majed Valad Beigi, Zhichun Zhu y Gokhan Memik. "Writeback-Aware LLC Management for PCM-Based Main Memory Systems". ACM Transactions on Design Automation of Electronic Systems 24, n.º 2 (21 de marzo de 2019): 1–19. http://dx.doi.org/10.1145/3292009.
Texto completoYoon, Su-Kyung, Jitae Yun, Jung-Geun Kim y Shin-Dug Kim. "Self-Adaptive Filtering Algorithm with PCM-Based Memory Storage System". ACM Transactions on Embedded Computing Systems 17, n.º 3 (2 de junio de 2018): 1–23. http://dx.doi.org/10.1145/3190856.
Texto completoEl-Hassan, Nemat H., Nandha Thulasiraman Kumar y Haider Abbas F. Almurib. "Modelling of wire resistance effect in PCM-based nanocrossbar memory". Journal of Engineering 2016, n.º 10 (1 de octubre de 2016): 357–62. http://dx.doi.org/10.1049/joe.2016.0212.
Texto completoMeng, Yingjie, Yimin Chen, Kexin Peng, Bin Chen, Chenjie Gu, Yixiao Gao, Guoxiang Wang y Xiang Shen. "GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy". AIP Advances 13, n.º 3 (1 de marzo de 2023): 035205. http://dx.doi.org/10.1063/5.0138286.
Texto completoXu, Zhehao, Xiao Su, Sicong Hua, Jiwei Zhai, Sannian Song y Zhitang Song. "Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film". Nanotechnology 33, n.º 7 (22 de noviembre de 2021): 075701. http://dx.doi.org/10.1088/1361-6528/ac3613.
Texto completoGafner, Yuri Ya, Svetlana L. Gafner y Daria A. Ryzhkova. "Estimating Ag-Cu Nanoalloy Applicability for PCM Data Recording". Solid State Phenomena 310 (septiembre de 2020): 47–52. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.47.
Texto completoYin, You, Rosalena Irma Alip, Yu Long Zhang, Ryota Kobayashi y Sumio Hosaka. "Multi-Level Storage in Lateral Phase Change Memory: From 3 to 16 Resistance Levels". Key Engineering Materials 534 (enero de 2013): 131–35. http://dx.doi.org/10.4028/www.scientific.net/kem.534.131.
Texto completoNguyen, Huu Tan, Andrzej Kusiak, Jean Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti y Massimo Longo. "Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application". Advances in Science and Technology 95 (octubre de 2014): 113–19. http://dx.doi.org/10.4028/www.scientific.net/ast.95.113.
Texto completoLiu, Guang Yu, Liang Cai Wu, Zhi Tang Song, Feng Rao, San Nian Song y Yan Cheng. "Stability of Sb2Te Crystalline Films for Phase Change Memory". Materials Science Forum 898 (junio de 2017): 1829–33. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1829.
Texto completoYin, You y Sumio Hosaka. "Proposed Phase-Change Memory with a Step-Like Channel for High-Performance Multi-State Storage". Key Engineering Materials 459 (diciembre de 2010): 145–50. http://dx.doi.org/10.4028/www.scientific.net/kem.459.145.
Texto completoLin, Shu-Yen y Shao-Cheng Wang. "Thermal-constrained memory management for three-dimensional DRAM-PCM memory with deep neural network applications". Microprocessors and Microsystems 89 (marzo de 2022): 104444. http://dx.doi.org/10.1016/j.micpro.2022.104444.
Texto completoGrimonia, E., M. R. C. Andhika, M. F. N. Aulady, R. V. C. Rubi y N. L. Hamidah. "Thermal Management System Using Phase Change Material for Lithium-ion Battery". Journal of Physics: Conference Series 2117, n.º 1 (1 de noviembre de 2021): 012005. http://dx.doi.org/10.1088/1742-6596/2117/1/012005.
Texto completoFAN, Yu-Lei y Xiao-Feng MENG. "Transaction Recovery Model of Databases Based on PCM and Flash Memory". Chinese Journal of Computers 36, n.º 8 (18 de marzo de 2014): 1582–91. http://dx.doi.org/10.3724/sp.j.1016.2013.01582.
Texto completoRuan, Shenchen, Haixia Wang y Dongsheng Wang. "MAC : A Novel Systematically Multilevel Cache Replacement Policy for PCM Memory". Computer Applications: An International Journal 3, n.º 2 (30 de mayo de 2016): 11–22. http://dx.doi.org/10.5121/caij.2016.3202.
Texto completoFu, Yinjin, Yutong Lu, Zhiguang Chen wu, Yang Wu y Nong Xiao. "Design and Simulation of Content-Aware Hybrid DRAM-PCM Memory System". IEEE Transactions on Parallel and Distributed Systems 33, n.º 7 (1 de julio de 2022): 1666–77. http://dx.doi.org/10.1109/tpds.2021.3123539.
Texto completoJunsangsri, Pilin y Fabrizio Lombardi. "A New Comprehensive Model of a Phase Change Memory (PCM) Cell". IEEE Transactions on Nanotechnology 13, n.º 6 (noviembre de 2014): 1213–25. http://dx.doi.org/10.1109/tnano.2014.2353992.
Texto completoCiocchini, Nicola, Marco Cassinerio, Davide Fugazza y Daniele Ielmini. "Modeling of Threshold-Voltage Drift in Phase-Change Memory (PCM) Devices". IEEE Transactions on Electron Devices 59, n.º 11 (noviembre de 2012): 3084–90. http://dx.doi.org/10.1109/ted.2012.2214784.
Texto completoBaek, Seungcheol, Hyung Gyu Lee, Chrysostomos Nicopoulos y Jongman Kim. "Designing Hybrid DRAM/PCM Main Memory Systems Utilizing Dual-Phase Compression". ACM Transactions on Design Automation of Electronic Systems 20, n.º 1 (18 de noviembre de 2014): 1–31. http://dx.doi.org/10.1145/2658989.
Texto completoMohseni, Milad y Ahmad Habibized Novin. "A survey on techniques for improving Phase Change Memory (PCM) lifetime". Journal of Systems Architecture 144 (noviembre de 2023): 103008. http://dx.doi.org/10.1016/j.sysarc.2023.103008.
Texto completoYang, Zhe, Dayou Zhang, Jingwei Cai, Chuantao Gong, Qiang He, Ming Xu, Hao Tong y Xiangshui Miao. "Joule heating induced non-melting phase transition and multi-level conductance in MoTe2 based phase change memory". Applied Physics Letters 121, n.º 20 (14 de noviembre de 2022): 203508. http://dx.doi.org/10.1063/5.0127160.
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