Literatura académica sobre el tema "Parabolic quantum well"
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Artículos de revistas sobre el tema "Parabolic quantum well"
Gusev, G. M., J. R. Leite, E. B. Olshanetskii, D. K. Maude, M. Cassé, J. C. Portal, N. T. Moshegov y A. I. Toropov. "Quantum hall effect in a wide parabolic quantum well". Brazilian Journal of Physics 29, n.º 4 (diciembre de 1999): 715–18. http://dx.doi.org/10.1590/s0103-97331999000400019.
Texto completoGruhn, W. "Magnetic interlayer coupling across parabolic quantum-well". Journal of Physics: Conference Series 79 (1 de agosto de 2007): 012006. http://dx.doi.org/10.1088/1742-6596/79/1/012006.
Texto completoKazaryan, Eduard M., Artavazd A. Kostanyan y Hayk A. Sarkisyan. "Impurity optical absorption in parabolic quantum well". Physica E: Low-dimensional Systems and Nanostructures 28, n.º 4 (septiembre de 2005): 423–30. http://dx.doi.org/10.1016/j.physe.2005.05.047.
Texto completoShayegan, M., T. Sajoto, J. Jo, M. Santos y L. Engel. "Magnetotransport in a wide parabolic quantum well". Surface Science 229, n.º 1-3 (abril de 1990): 83–87. http://dx.doi.org/10.1016/0039-6028(90)90840-5.
Texto completoIshikawa, Takuya, Shinji Nishimura y Kunio Tada. "Quantum-Confined Stark Effect in a Parabolic-Potential Quantum Well". Japanese Journal of Applied Physics 29, Part 1, No. 8 (20 de agosto de 1990): 1466–73. http://dx.doi.org/10.1143/jjap.29.1466.
Texto completoChen, W. Q., S. M. Wang, T. G. Andersson y J. Thordson. "Inverse parabolic quantum well and its quantum‐confined Stark effect". Journal of Applied Physics 74, n.º 10 (15 de noviembre de 1993): 6247–50. http://dx.doi.org/10.1063/1.355167.
Texto completoZHAO, FENG-QI, XI XIA LIANG y SHILIANG BAN. "ENERGY LEVELS OF A POLARON IN A FINITE PARABOLIC QUANTUM WELL". International Journal of Modern Physics B 15, n.º 05 (20 de febrero de 2001): 527–35. http://dx.doi.org/10.1142/s0217979201004642.
Texto completoRuan, Yong-Hong, Qing-Hu Chen y Zheng-Kuan Jiao. "Variational Path-Integral Study on a Bipolaron in a Parabolic Quantum Wire or Well". International Journal of Modern Physics B 17, n.º 22n24 (30 de septiembre de 2003): 4332–37. http://dx.doi.org/10.1142/s0217979203022404.
Texto completoFigarova, S. R., H. I. Huseynov y V. R. Figarov. "Thermoelectric power hysteresis in semi-parabolic quantum well". Thin Solid Films 721 (marzo de 2021): 138554. http://dx.doi.org/10.1016/j.tsf.2021.138554.
Texto completoZhang, Hong, Man Shen y Jian-Jun Liu. "Biexciton binding energy in parabolic quantum-well wires". Journal of Applied Physics 103, n.º 4 (15 de febrero de 2008): 043705. http://dx.doi.org/10.1063/1.2874115.
Texto completoTesis sobre el tema "Parabolic quantum well"
Le, Hung Manh y n/a. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics". Griffith University. School of Science, 1997. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20070403.094305.
Texto completoLe, Hung. "Electronic Properties of Nanostructures from Hydrostatics and Hydrodynamics". Thesis, Griffith University, 1997. http://hdl.handle.net/10072/366817.
Texto completoThesis (PhD Doctorate)
Doctor of Philosophy (PhD)
School of Science
Science, Environment, Engineering and Technology
Full Text
Acuna, Guillermo Pedro. "Far Field and Near Field Terahertz Spectroscopy on Parabolic Quantum Wells". Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-115893.
Texto completoChoque, Nilo Mauricio Sotomayor. "Estudo da dinâmica de caos no gás tridimensional de elétrons de alta mobilidade". Universidade de São Paulo, 2002. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-23022012-142557/.
Texto completoThe chaotic electron dynamics in two-dimensional and three-dimensional arrays of elec tron billiards in ALx Ga1-xAs/GaAs semiconductor heterostructures has been studied in experimental way and also through numerical simulations. As a first part, the chaotic electron dynamics in two-dimensional antidot super-lattices has been studied under the influence of a uniform magnetic field applied in parallel configuration related to the plane of the electron gas. In this case, the Fermi contour anisotropy of the two-dimensional elec tron gas induced by the parallel field highly distorts the shape of the electron trajectories inducing pronounced changes in the commensurability peaks of the low field magnetoresis tance, in cryogenic temperatures. In the second part, arrays of three dimensional electron billiards were obtained, by first time, through the patterning of rectangular super-lattices of cylindrical voids in ALx Ga1-xAs/GaAs parabolic quantum wells containing a high mo bility three-dimensional electron gas. Resistivity measurements in these systems reveal anomalous peaks in the low magnetic field region in similar way as measurements in two-dimensional antidots systems. The electron dynamics of the three-dimensional bil liard was calculated, analyzing the evolution of trajectories in phase space by means of Poincaré space of sections. The magnetoresistance xx of the three-dimensional electron gas was calculated through linear responde theory, being found that nonlinear resonances are reflected in the observed anomalous peaks. The accomplishment os these systems allowed the study of new physical phenomena such as the commensurability oscillations in three-dimensional systems and size-effects due to geometrical resonances.
Lamas, Tomás Erikson. "Epitaxia por feixe molecular de camadas dopadas do tipo p para a construção de dispositivos optoeletrônicos". Universidade de São Paulo, 2004. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-27072004-160748/.
Texto completoDuring the last three decades, molecular-beam epitaxy has emerged as an excellent technique for the growth of high-quality semiconductor layers both for device construction and for basic research. In spite of this fact, there is still a lack of a universally accepted method to obtain p-type doped layers by this growth technique. In this work, we studied, optimized and compared three different methods to get p-type GaAs layers. Two of these methods exploited the amphoteric behavior of silicon atoms both on GaAs(311)A (by changing the growth conditions) and on GaAs(100) (by employing a new growth mode called droplet-assisted epitaxy) substrates. The third method was based on the use of carbon, whose properties as a p-type dopant in GaAs layers are well known in other epitaxial techniques but scarcely investigated in molecular-beam epitaxy. In order to check the quality of the doped layers, we grew structures like high hole-mobility parabolic quantum wells and optoelectronic devices like light-emitting diodes and lasers.
Duarte, Celso de Araujo. ""Propriedades magnéticas e de spin em semicondutores do grupo III-V"". Universidade de São Paulo, 2006. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-06092006-101017/.
Texto completoWe present the results of our investigations concerning MBE grown AlGaAs/GaAs parabolic quantum well (PQW) samples. We focused on the variation of the Landé g factor along the structure of the PQWs, which occur as a consquence of its dependence on the Al content on the alloy AlGaAs. The implications are studied by Hall and Shubnikov-de Haas measurements. Shubnikov-de Haas measurements at temperatures of the order of tenths to hundreds of milikelvin with variation of the tilt angle are shown to be an efficient method for the determination of the g factor. We could distinguish not only the alloy g factor, but its many body contribution (exchange contribution). On the other hand, Hall measurements exhibit an unusual behavior, which we prooved it has no relation neither to the well known "anomalous Hall effect", a characteristic of ferromagnetic materials, nor to a multi subband occupation effect. We atribute such behavior to a "spin valve effect", caused by the spatial variation of the g factor. Our observations allow us to idealize a "spin valve" transistor, without any ferromagnetic material in its structure.
Lo, K. L. y 羅崑崙. "Photoionization of Donor Impurity In a Finite Parabolic Quantum Well". Thesis, 1998. http://ndltd.ncl.edu.tw/handle/55333722049186337801.
Texto completo國立交通大學
電子物理系
86
In this thesis, we discussed the size of the photoinonization cross section of donor impurity in a finite parabolic quantum well. First, the groundstate energies and wave functions of finite parabolic quantum wells of GaAs surrounded by A1xGa1x As are calculated. Next, the binding energies of ground-state are evaluated for donor impurity in the wells with a variation method, using the wave functions that are the product of the hydrogenic wave functions and the wave functions of finite parabolic quantum wells. Finally, the photon energy dependence of the photoionization cross sections is calculated by using the formula of photoionization cross section of bulk case. The result we obtained shows the binding energies and the photoionization cross-sections are affected by the width and the depth of the quantum wells.
Acuña, Guillermo [Verfasser]. "Far field and near field terahertz spectroscopy on parabolic quantum wells / vorgelegt von Guillermo Pedro Acuña". 2010. http://d-nb.info/100402231X/34.
Texto completoLibros sobre el tema "Parabolic quantum well"
Melnikov, D. V., J. Kim, L. X. Zhang y J. P. Leburton. Few-electron quantum-dot spintronics. Editado por A. V. Narlikar y Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.2.
Texto completoCapítulos de libros sobre el tema "Parabolic quantum well"
Sotomayor, N. M., G. M. Gusev, J. R. Leite, N. T. Moshegov y A. I. Toropov. "Weak localization effects in a wide parabolic quantum well". En Springer Proceedings in Physics, 807–8. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_382.
Texto completoVinitsky, S. I., O. Chuluunbaatar, V. P. Gerdt, A. A. Gusev y V. A. Rostovtsev. "Symbolic-Numerical Algorithms for Solving Parabolic Quantum Well Problem with Hydrogen-Like Impurity". En Computer Algebra in Scientific Computing, 334–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04103-7_29.
Texto completoBandyopadhyay, Dipan, Apu Mistry y JoyeetaBasu Pal. "Study on Enhancement of Optical Output of InxGa1-xN/GaN Parabolic Quantum Well LEDs, Varying Indium Compositions, and Well Widths". En Proceedings of International Conference on Industrial Instrumentation and Control, 343–49. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-7011-4_34.
Texto completoSahoo, N., A. K. Panda y T. Sahu. "Effect of Intersubband Interaction on Multisubband Electron Mobility in a Parabolic Quantum Well Under Applied Electric Field". En Physics of Semiconductor Devices, 231–34. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_58.
Texto completoBrey, L., N. F. Johnson, Jed Dempsey y B. I. Halperin. "Electronic Properties of Parabolic Quantum Wells". En Light Scattering in Semiconductor Structures and Superlattices, 525–41. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3695-0_38.
Texto completoMaranowski, K. D., A. C. Gossard, K. Unterrainer y E. Gornik. "Electrically Excited Terahertz Emission from Parabolic Quantum Wells". En Intersubband Transitions in Quantum Wells: Physics and Devices, 181–86. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_27.
Texto completoGhatak, Kamakhya Prasad y Sitangshu Bhattacharya. "The DSL in Quantum Wells of Non-Parabolic Semiconductors". En Debye Screening Length, 3–61. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01339-8_1.
Texto completoGhatak, Kamakhya Prasad y Sitangshu Bhattacharya. "The ER in Quantum Wells of HD Non-parabolic Semiconductors". En Heavily-Doped 2D-Quantized Structures and the Einstein Relation, 1–116. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-08380-3_1.
Texto completoGwinn, E. G., P. F. Hopkins, A. J. Rimberg, R. M. Westervelt, M. Sundaram y A. C. Gossard. "Quantum Hall Effect in Wide Parabolic GaAs/AlxGa1−xAs Wells". En High Magnetic Fields in Semiconductor Physics II, 58–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_10.
Texto completoBratschitsch, R., T. Müller, R. Kersting, G. Strasser y K. Unterrainer. "Coherent THz emission from optically pumped intersubband plasmons in parabolic quantum wells". En Ultrafast Phenomena XII, 203–5. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-56546-5_60.
Texto completoActas de conferencias sobre el tema "Parabolic quantum well"
Sahu, Trinath, Ajit K. Panda y Sangeeta Palo. "Parabolic double quantum well structures: Study of multisubband electron mobility". En 2012 International Conference on Emerging Electronics (ICEE 2012). IEEE, 2012. http://dx.doi.org/10.1109/icemelec.2012.6636266.
Texto completoSahu, Ajit K. y Narayan Sahoo. "Multisubband Electron Mobility in Parabolic Coupled Double Quantum Well Structure". En 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON). IEEE, 2022. http://dx.doi.org/10.1109/edkcon56221.2022.10032897.
Texto completoCapasso, F., S. Sen, A. C. Gossard, R. A. Spah, A. L. Hutchinson y S. N. G. Chu. "Observation of resonant tunneling through a compositionally graded parabolic quantum well". En 1987 International Electron Devices Meeting. IRE, 1987. http://dx.doi.org/10.1109/iedm.1987.191350.
Texto completoSahoo, Narayan, A. K. Panda y Trinath Sahu. "Enhancement of multisubband electron transport mobility in square — Parabolic double quantum well". En 2017 Devices for Integrated Circuit (DevIC). IEEE, 2017. http://dx.doi.org/10.1109/devic.2017.8073948.
Texto completoKeshavarz, Alireza, Naser Zamani y Hamid Nadgaran. "Optical gain in double semi-parabolic quantum well laser typical of AlGaAs/GaAs". En 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014). IEEE, 2014. http://dx.doi.org/10.1109/nusod.2014.6935365.
Texto completoSahu, Trinath, Ajit K. Panda y Sangeeta Palo. "AlxGa1−xAs based parabolic quantum well structures: Enhancement of multisubband electron mobility". En 2012 International Conference on Communications, Devices and Intelligent Systems (CODIS). IEEE, 2012. http://dx.doi.org/10.1109/codis.2012.6422161.
Texto completoKeshavarz, Alireza, Naser Zamani y Farzin Emami. "Investigation of optical gain in AlGaAs/GaAs symmetric double semi-parabolic quantum well laser". En 2012 Photonics Global Conference (PGC). IEEE, 2012. http://dx.doi.org/10.1109/pgc.2012.6457964.
Texto completoKeller, Janine, Giacomo Scalari, Curdin Maissen, Gian Lorenzo Paravicini-Bagliani, Johannes Haase, Michele Failla, Maksym Myronov, David R. Leadley, James Lloyd-Hughes y Jerome Faist. "Highly non-parabolic strained Ge quantum well for THz ultra-strong light-matter coupling". En 2017 Conference on Lasers and Electro-Optics Europe (CLEO/Europe) & European Quantum Electronics Conference (EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087625.
Texto completoGurjar, Ramvilas, Chandra Prakash Singh, Ajay Singh Meena y Kankat Ghosh. "Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density". En 2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). IEEE, 2022. http://dx.doi.org/10.1109/nusod54938.2022.9894798.
Texto completoSahoo, Narayan, Sangeeta Palo, Ajit K. Panda y Trinath Sahu. "Effect of parabolic potential on improvement of electron mobility in hybrid double quantum well structure". En ADVANCED MATERIALS: Proceedings of the International Workshop on Advanced Materials (IWAM-2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5050760.
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