Literatura académica sobre el tema "P-type GaAs"
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Artículos de revistas sobre el tema "P-type GaAs"
Fuyuki, Takuma, Shota Kashiyama, Kunishige Oe y Masahiro Yoshimoto. "Interface States in p-Type GaAs/GaAs1-xBixHeterostructure". Japanese Journal of Applied Physics 51, n.º 11S (1 de noviembre de 2012): 11PC02. http://dx.doi.org/10.7567/jjap.51.11pc02.
Texto completoStichtenoth, D., K. Wegener, C. Gutsche, I. Regolin, F. J. Tegude, W. Prost, M. Seibt y C. Ronning. "P-type doping of GaAs nanowires". Applied Physics Letters 92, n.º 16 (21 de abril de 2008): 163107. http://dx.doi.org/10.1063/1.2912129.
Texto completoXie, Zhijian y S. A. Lyon. "Ballistic transport in p-type GaAs". Applied Physics Letters 75, n.º 14 (4 de octubre de 1999): 2085–87. http://dx.doi.org/10.1063/1.124924.
Texto completoNathan, M. I., W. P. Dumke, K. Wrenner, S. Tiwari, S. L. Wright y K. A. Jenkins. "Electron mobility in p‐type GaAs". Applied Physics Letters 52, n.º 8 (22 de febrero de 1988): 654–56. http://dx.doi.org/10.1063/1.99395.
Texto completoMoutonnet, D. "Photochemical pattern on p-type GaAs". Materials Letters 6, n.º 1-2 (noviembre de 1987): 34–36. http://dx.doi.org/10.1016/0167-577x(87)90097-8.
Texto completoDong, Boqun, Andrei Afanasev, Rolland Johnson y Mona Zaghloul. "Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves". Sensors 20, n.º 8 (24 de abril de 2020): 2419. http://dx.doi.org/10.3390/s20082419.
Texto completoBagraev, Nikolai T. "Metastable Surface Defects in p-Type GaAs". Materials Science Forum 143-147 (octubre de 1993): 543–48. http://dx.doi.org/10.4028/www.scientific.net/msf.143-147.543.
Texto completoIto, Hiroshi y Tadao Ishibashi. "Surface Recombination Velocity in p-Type GaAs". Japanese Journal of Applied Physics 33, Part 1, No.1A (15 de enero de 1994): 88–89. http://dx.doi.org/10.1143/jjap.33.88.
Texto completoLodha, Saurabh y David B. Janes. "Metal/molecule/p-type GaAs heterostructure devices". Journal of Applied Physics 100, n.º 2 (15 de julio de 2006): 024503. http://dx.doi.org/10.1063/1.2210569.
Texto completoKidalov, V. V. "Optical properties of p-type porous GaAs". Semiconductor physics, quantum electronics and optoelectronics 8, n.º 4 (15 de diciembre de 2005): 118–20. http://dx.doi.org/10.15407/spqeo8.04.118.
Texto completoTesis sobre el tema "P-type GaAs"
Klochan, Oleh V. Physics Faculty of Science UNSW. "Ballistic transport in one-dimensional p-type GaAs devices". Awarded by:University of New South Wales, 2007. http://handle.unsw.edu.au/1959.4/35186.
Texto completoGrbić, Boris. "Hole transport and spin-orbit coupling in p-type GaAs nanostructures". kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29710.
Texto completoClarke, Warrick Robin Physics Faculty of Science UNSW. "Quantum interaction phenomena in p-GaAs microelectronic devices". Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.
Texto completoSaha, Uttam Kumar. "Photoluminescence and kinetic of MOCVD grown P-type GaAs:Nd and Nd-implanted semi-insulating GaAs". Ohio University / OhioLINK, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1178044230.
Texto completoLiu, Gordon Gang. "Electrochemical behaviour of gallium arsenide". Thesis, University of British Columbia, 1991. http://hdl.handle.net/2429/30080.
Texto completoApplied Science, Faculty of
Materials Engineering, Department of
Graduate
Rahbi, Rania. "Etude de la diffusion de l'hydrogène et des interactions hydrogène accepteur dans gaas de type p". Paris 7, 1991. http://www.theses.fr/1991PA077075.
Texto completoJOURDAN, NICOLAS. "Etude des dopants de type p pour l'epitaxie par jets moleculaires de transistors bipolaires a heterostructure gaas/gaa1as". Paris 7, 1991. http://www.theses.fr/1991PA077047.
Texto completoBenarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires". Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.
Texto completoPant, Bharat Raj. "A Comparative Study on P-type Nickel Oxide and N-type Zinc Oxide for Gas Sensor Applications". University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1525473245395728.
Texto completoMadhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures". Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.
Texto completoCapítulos de libros sobre el tema "P-type GaAs"
Heuring, W., E. Bangert, G. Landwehr, G. Weimann y W. Schlapp. "p-Type GaAs-(GaAI)As Heterostructures in Tilted Magnetic Fields: Theory and Experiments". En High Magnetic Fields in Semiconductor Physics II, 190–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_30.
Texto completoLandwehr, G. "Transport Properties of p-Type GaAs-(GaAl)As Heterojunctions in High Magnetic Fields". En Springer Series in Solid-State Sciences, 295–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_44.
Texto completoPerraud, S., C. David y Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces". En Solid State Phenomena, 835–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-30-2.835.
Texto completoOssau, W., T. L. Kuhn, E. Bangert y G. Weimann. "The H-Band Luminescence of p-Type GaAs-(GaAl)As Heterostructures in High Magnetic Fields". En High Magnetic Fields in Semiconductor Physics II, 268–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_41.
Texto completoReményi, G., G. Landwehr, W. Heuring, G. Weimann y W. Schlapp. "Fractional Quantum Hall Effect of p-Type GaAs-(GaAl)As Heterostructures in the Millikelvin Range". En Springer Series in Solid-State Sciences, 166–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_25.
Texto completoIwasa, Y., N. Miura, S. Takeyama y T. Ando. "Hole Cyclotron Resonance in p-Type GaAs-AlGaAs Superlattices in High Magnetic Fields". En Springer Series in Solid-State Sciences, 274–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-83114-0_40.
Texto completoLohner, A., M. Woerner, T. Elsaesser y W. Kaiser. "Hot Hole Capture by Shallow Acceptors in p-Type GaAs Studied by Picosecond Infrared Spectroscopy". En Ultrafast Phenomena VIII, 416–17. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_131.
Texto completoOno, M., N. Nishioka, M. Morifuji y C. Hamaguchi. "Temperature Dependence of Resonant Tunneling Characteristics in a p-type GaAs/AlAs Double-Barrier Structure". En Springer Proceedings in Physics, 835–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_396.
Texto completoSzmulowicz, Frank, Gail J. Brown, William C. Mitchel, H. C. Liu, L. Li, M. Buchanan, Z. R. Wasilewski y C. H. Lin. "Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices". En Intersubband Transitions in Quantum Wells: Physics and Devices, 76–83. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5759-3_11.
Texto completoMal, Indranil, Asish Hazra, D. P. Samajdar y T. D. Das. "Investigation of Electronic and Optical Properties of GaSbBi/GaAs Type-II Quantum Wells Using 14-Band k · p Hamiltonian". En Springer Proceedings in Physics, 1013–20. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_155.
Texto completoActas de conferencias sobre el tema "P-type GaAs"
Barnes, Peter A., Joongseo Park y John B. Crofton. "Nonalloyed contacts to p-type GaAs". En OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, editado por R. Aaron Falk. SPIE, 1993. http://dx.doi.org/10.1117/12.146540.
Texto completoSzmulowicz, Frank y Gail J. Brown. "Whither P-type GaAs/AlGaAs QWIP?" En Symposium on Integrated Optoelectronic Devices, editado por Gail J. Brown y Manijeh Razeghi. SPIE, 2002. http://dx.doi.org/10.1117/12.467659.
Texto completoCifuentes, N., H. Limborco, M. V. B. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. I. N. da Silva, J. C. Gonzalez, Daniel B. Roa, Emilson R. Viana y A. Abelenda. "Electronic transport in p-type doped GaAs nanowires". En 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2016. http://dx.doi.org/10.1109/sbmicro.2016.7731333.
Texto completoXu, Zhiwei, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella y H. Alan Schwettman. "Second harmonic generation in p-type GaAs quantum wells". En OE/LASE '94, editado por Gottfried H. Doehler y Emil S. Koteles. SPIE, 1994. http://dx.doi.org/10.1117/12.175709.
Texto completoMajid, A. "Deep levels in Ruthenium doped p-type MOCVD GaAs". En PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994034.
Texto completoMissaoui, A., L. Beji y A. Bouazizi. "Optical Study of Porous p-type GaAs by Spectroscopic Ellipsometry". En 2nd International Conference on Transparent Optical Networks "Mediterranean Winter" 2008. ICTON-MW'08. IEEE, 2008. http://dx.doi.org/10.1109/ictonmw.2008.4773114.
Texto completoBoland, Jessica L., A. Casadei, G. Tutuncouglu, F. Matteini, C. Davies, F. Gaveen, F. Amaduzzi et al. "Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping". En 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). IEEE, 2016. http://dx.doi.org/10.1109/irmmw-thz.2016.7758574.
Texto completoCho, Taehee, Hyungsuk Kim, Songcheol Hong y Youngse Kwon. "Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector". En 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pd-5-6.
Texto completoBOGDANOV, E. V., A. A. ILIEVSKY, N. YA. MININA, A. M. SAVIN, O. P. HANSEN, C. B. SORENSEN y W. KRAAK. "NEGATIVE AND PERSISTENT POSITIVE PHOTOCONDUCTIVITY IN P-TYPE Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As". En Reviews and Short Notes to NANOMEETING-2001. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812810076_0019.
Texto completoGrbić, B., R. Leturcq, T. Ihn, K. Ensslin, D. Reuter y A. D. Wieck. "Hole transport in p-type GaAs quantum dots and point contacts". En PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730121.
Texto completoInformes sobre el tema "P-type GaAs"
McCormick, Larry D. Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs. Fort Belvoir, VA: Defense Technical Information Center, marzo de 1989. http://dx.doi.org/10.21236/ada209216.
Texto completoTracy, Lisa A., John L. Reno y Terry W. Hargett. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures. Office of Scientific and Technical Information (OSTI), septiembre de 2015. http://dx.doi.org/10.2172/1221866.
Texto completoChu, Jerome T. y Sheng S. Li. Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, junio de 1997. http://dx.doi.org/10.21236/ada325634.
Texto completoDutra, Lauren M., James Nonnemaker, Nathaniel Taylor, Ashley Feld, Brian Bradfield, John Holloway, Edward (Chip) Hill y Annice Kim. Visual Attention to Tobacco-Related Stimuli in a 3D Virtual Store. RTI Press, mayo de 2020. http://dx.doi.org/10.3768/rtipress.2020.rr.0036.2005.
Texto completoAwschalom, M. y R. K. T. Haken. Dependence of charge collection distributions and dose on the gas type filling the ionization chamber for a p(66)Be(49) clinical neutron beam. Office of Scientific and Technical Information (OSTI), enero de 1985. http://dx.doi.org/10.2172/5345986.
Texto completoAwschalom, Miguel y R. Ten Haken. Dependence of Charge Collection Distributions and Dose of the Gas Type Filling the Ionization Chamber for a p(66)-Be(49) Clinical Neutron Beam. Office of Scientific and Technical Information (OSTI), enero de 1985. http://dx.doi.org/10.2172/1156255.
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