Artículos de revistas sobre el tema "Optoelectronic transistors"
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Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)". Materials 14, n.º 13 (5 de julio de 2021): 3756. http://dx.doi.org/10.3390/ma14133756.
Texto completoSoref, Richard. "Applications of Silicon-Based Optoelectronics". MRS Bulletin 23, n.º 4 (abril de 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.
Texto completoPan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication". MRS Advances 5, n.º 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Texto completoHuseynova, Gunel y Vladislav Kostianovskii. "Doped organic field-effect transistors". Material Science & Engineering International Journal 2, n.º 6 (5 de diciembre de 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Texto completoZhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong y Jia Huang. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems". Research 2021 (22 de febrero de 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.
Texto completoGao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong y Wenping Hu. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors". Nanoscale 12, n.º 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.
Texto completoVyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors". Johnson Matthey Technology Review 64, n.º 2 (1 de abril de 2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.
Texto completoWu, Jieyun, Qing Li, Wen Wang y Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups". Mini-Reviews in Organic Chemistry 16, n.º 3 (25 de enero de 2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.
Texto completoUrey, Z., D. Wake, D. J. Newson y I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers". Electronics Letters 29, n.º 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.
Texto completoHong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou y Ya-Qiong Xu. "Polarized photocurrent response in black phosphorus field-effect transistors". Nanoscale 6, n.º 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.
Texto completoCheng, Jinbing, Junbao He, Chunying Pu, Congbin Liu, Xiaoyu Huang, Deyang Zhang, Hailong Yan y Paul K. Chu. "MoS2 Transistors with Low Schottky Barrier Contact by Optimizing the Interfacial Layer Thickness". Energies 15, n.º 17 (25 de agosto de 2022): 6169. http://dx.doi.org/10.3390/en15176169.
Texto completoNie, Yiling, Pengshan Xie, Xu Chen, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Yunchao Xu et al. "Hybrid C8-BTBT/InGaAs nanowire heterojunction for artificial photosynaptic transistors". Journal of Semiconductors 43, n.º 11 (1 de noviembre de 2022): 112201. http://dx.doi.org/10.1088/1674-4926/43/11/112201.
Texto completoThompson, Avery. "Applying ferroelectric materials in transistors for electronic and optoelectronic applications". Scilight 2023, n.º 8 (24 de febrero de 2023): 081106. http://dx.doi.org/10.1063/10.0017443.
Texto completoYuvaraja, Saravanan, Ali Nawaz, Qian Liu, Deepak Dubal, Sandeep G. Surya, Khaled N. Salama y Prashant Sonar. "Organic field-effect transistor-based flexible sensors". Chemical Society Reviews 49, n.º 11 (2020): 3423–60. http://dx.doi.org/10.1039/c9cs00811j.
Texto completoDai, Z. R., Sangbeom Kang, W. Alan Doolittle, Z. L. Wang y April S. Brown. "Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy". Microscopy and Microanalysis 6, S2 (agosto de 2000): 1106–7. http://dx.doi.org/10.1017/s1431927600038022.
Texto completoJiao, Hanxue, Xudong Wang, Shuaiqin Wu, Yan Chen, Junhao Chu y Jianlu Wang. "Ferroelectric field effect transistors for electronics and optoelectronics". Applied Physics Reviews 10, n.º 1 (marzo de 2023): 011310. http://dx.doi.org/10.1063/5.0090120.
Texto completoChen, Yusheng, Yifan Yao, Nicholas Turetta y Paolo Samorì. "Vertical organic transistors with short channels for multifunctional optoelectronic devices". Journal of Materials Chemistry C 10, n.º 7 (2022): 2494–506. http://dx.doi.org/10.1039/d1tc05055a.
Texto completoLEE, YOUNGBIN y JONG-HYUN AHN. "GRAPHENE-BASED TRANSPARENT CONDUCTIVE FILMS". Nano 08, n.º 03 (30 de mayo de 2013): 1330001. http://dx.doi.org/10.1142/s1793292013300016.
Texto completoWang, Gongming, Dehui Li, Hung-Chieh Cheng, Yongjia Li, Chih-Yen Chen, Anxiang Yin, Zipeng Zhao et al. "Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics". Science Advances 1, n.º 9 (octubre de 2015): e1500613. http://dx.doi.org/10.1126/sciadv.1500613.
Texto completoXie, Ling-Hai, Su-Hui Yang, Jin-Yi Lin, Ming-Dong Yi y Wei Huang. "Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics". Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, n.º 2000 (13 de octubre de 2013): 20120337. http://dx.doi.org/10.1098/rsta.2012.0337.
Texto completoWang, Lin, Li Huang, Wee Chong Tan, Xuewei Feng, Li Chen y Kah-Wee Ang. "Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics". Nanoscale 10, n.º 29 (2018): 14359–67. http://dx.doi.org/10.1039/c8nr03207f.
Texto completoDong, Mi-Mi, Guang-Ping Zhang, Zong-Liang Li, Ming-Lang Wang, Chuan-Kui Wang y Xiao-Xiao Fu. "Anisotropic interfacial properties of monolayer C2N field effect transistors". Physical Chemistry Chemical Physics 22, n.º 48 (2020): 28074–85. http://dx.doi.org/10.1039/d0cp04450d.
Texto completoMoram, M. A. y S. Zhang. "ScGaN and ScAlN: emerging nitride materials". J. Mater. Chem. A 2, n.º 17 (2014): 6042–50. http://dx.doi.org/10.1039/c3ta14189f.
Texto completoZhou, Wenhan, Shengli Zhang, Shiying Guo, Hengze Qu, Bo Cai, Xiang Chen y Haibo Zeng. "High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study". Nanoscale 12, n.º 36 (2020): 18931–37. http://dx.doi.org/10.1039/d0nr04129g.
Texto completoQian, Fangsheng, Xiaobo Bu, Junjie Wang, Ziyu Lv, Su-Ting Han y Ye Zhou. "Evolutionary 2D organic crystals for optoelectronic transistors and neuromorphic computing". Neuromorphic Computing and Engineering 2, n.º 1 (7 de febrero de 2022): 012001. http://dx.doi.org/10.1088/2634-4386/ac4a84.
Texto completoLee, Seunghyun, Jin-Seo Noh, Jeongmin Kim, MinGin Kim, So Young Jang, Jeunghee Park y Wooyoung Lee. "The Optoelectronic Properties of PbS Nanowire Field-Effect Transistors". IEEE Transactions on Nanotechnology 12, n.º 6 (noviembre de 2013): 1135–38. http://dx.doi.org/10.1109/tnano.2013.2280911.
Texto completoYu, Hyeonggeun, Zhipeng Dong, Jing Guo, Doyoung Kim y Franky So. "Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications". ACS Applied Materials & Interfaces 8, n.º 16 (15 de abril de 2016): 10430–35. http://dx.doi.org/10.1021/acsami.6b00182.
Texto completoPan, James N. "Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs". MRS Advances 4, n.º 48 (2019): 2585–91. http://dx.doi.org/10.1557/adv.2019.211.
Texto completoUrbanos, Fernando J., A. Black, Ramón Bernardo-Gavito, A. L. Vázquez de Parga, Rodolfo Miranda y D. Granados. "Electrical and geometrical tuning of MoS2 field effect transistors via direct nanopatterning". Nanoscale 11, n.º 23 (2019): 11152–58. http://dx.doi.org/10.1039/c9nr02464f.
Texto completoZhu, Zhongcheng, Imran Murtaza, Hong Meng y Wei Huang. "Thin film transistors based on two dimensional graphene and graphene/semiconductor heterojunctions". RSC Advances 7, n.º 28 (2017): 17387–97. http://dx.doi.org/10.1039/c6ra27674a.
Texto completoSun, Yilin, Yingtao Ding, Dan Xie, Jianlong Xu, Mengxing Sun, Pengfei Yang y Yanfeng Zhang. "Optogenetics‐Inspired Neuromorphic Optoelectronic Synaptic Transistors with Optically Modulated Plasticity". Advanced Optical Materials 9, n.º 12 (27 de marzo de 2021): 2002232. http://dx.doi.org/10.1002/adom.202002232.
Texto completoLee, Changmin y Jaewon Jang. "Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors". JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY 29, n.º 5 (30 de septiembre de 2020): 328–31. http://dx.doi.org/10.46670/jsst.2020.29.5.328.
Texto completoYang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru y Lou Zhi-Dong. "Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors". Acta Physica Sinica 58, n.º 5 (2009): 3427. http://dx.doi.org/10.7498/aps.58.3427.
Texto completoHong, Jintao, Mengchen Wang, Jie Jiang, Peng Zheng, Hui Zheng, Liang Zheng, Dexuan Huo, Zhangting Wu, Zhenhua Ni y Yang Zhang. "Optoelectronic performance of multilayer WSe2 transistors enhanced by defect engineering". Applied Physics Express 13, n.º 6 (13 de mayo de 2020): 061004. http://dx.doi.org/10.35848/1882-0786/ab8f13.
Texto completoYang, Shengxue, Sefaattin Tongay, Yan Li, Qu Yue, Jian-Bai Xia, Shun-Shen Li, Jingbo Li y Su-Huai Wei. "Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors". Nanoscale 6, n.º 13 (2014): 7226. http://dx.doi.org/10.1039/c4nr01741b.
Texto completoBrückner, V. y F. Kerstan. "Fast Response Time Measurements in Transistors Using Picosecond Optoelectronic Switches". physica status solidi (a) 91, n.º 2 (16 de octubre de 1985): K179—K183. http://dx.doi.org/10.1002/pssa.2210910266.
Texto completoHuo, Nengjie, Jun Kang, Zhongming Wei, Shu-Shen Li, Jingbo Li y Su-Huai Wei. "Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2Heterostructure Transistors". Advanced Functional Materials 24, n.º 44 (5 de septiembre de 2014): 7025–31. http://dx.doi.org/10.1002/adfm.201401504.
Texto completoDuan, Hongxiao, Kashif Javaid, Lingyan Liang, Lu Huang, Jiahuan Yu, Hongliang Zhang, Junhua Gao, Fei Zhuge, Ting-Chang Chang y Hongtao Cao. "Broadband Optoelectronic Synaptic Thin‐Film Transistors Based on Oxide Semiconductors". physica status solidi (RRL) – Rapid Research Letters 14, n.º 4 (abril de 2020): 1900630. http://dx.doi.org/10.1002/pssr.201900630.
Texto completoFaella, Enver, Kimberly Intonti, Loredana Viscardi, Filippo Giubileo, Arun Kumar, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo y Antonio Di Bartolomeo. "Electric Transport in Few-Layer ReSe2 Transistors Modulated by Air Pressure and Light". Nanomaterials 12, n.º 11 (31 de mayo de 2022): 1886. http://dx.doi.org/10.3390/nano12111886.
Texto completoZhu, Chen, Wen Huang, Wei Li, Xuegong Yu y Xing’ao Li. "Light-Emitting Artificial Synapses for Neuromorphic Computing". Research 2022 (24 de septiembre de 2022): 1–6. http://dx.doi.org/10.34133/2022/9786023.
Texto completoOh, Hongseok. "Heteroepitaxially grown semiconductors on large-scale 2D nanomaterials for optoelectronics devices". Ceramist 25, n.º 4 (31 de diciembre de 2022): 412–26. http://dx.doi.org/10.31613/ceramist.2022.25.4.04.
Texto completoMALIK, A. y M. ACEVES. "IMPROVED TWO-TERMINAL SILICON FUNCTIONAL OPTICAL SENSOR". Modern Physics Letters B 15, n.º 17n19 (20 de agosto de 2001): 722–25. http://dx.doi.org/10.1142/s0217984901002385.
Texto completoSingh, Arun Kumar, Shaista Andleeb, Jai Singh y Jonghwa Eom. "Tailoring the electrical properties of multilayer MoS2 transistors using ultraviolet light irradiation". RSC Advances 5, n.º 94 (2015): 77014–18. http://dx.doi.org/10.1039/c5ra14509k.
Texto completoJang, Jiung, Yeonsu Kang, Danyoung Cha, Junyoung Bae y Sungsik Lee. "Thin-Film Optical Devices Based on Transparent Conducting Oxides: Physical Mechanisms and Applications". Crystals 9, n.º 4 (3 de abril de 2019): 192. http://dx.doi.org/10.3390/cryst9040192.
Texto completoComí, Marc, Dhananjaya Patra, Rui Yang, Zhihui Chen, Alexandra Harbuzaru, Yiming Wubulikasimu, Sarbajit Banerjee, Rocío Ponce Ortiz, Yao Liu y Mohammed Al-Hashimi. "Alkoxy functionalized benzothiadiazole based donor–acceptor conjugated copolymers for organic field-effect transistors". Journal of Materials Chemistry C 9, n.º 15 (2021): 5113–23. http://dx.doi.org/10.1039/d1tc00079a.
Texto completoLiu, Hao y Junhong Yang. "Research on Photoelectric Detection Performance Based on Pb Se Quantum Dots". Journal of Physics: Conference Series 2290, n.º 1 (1 de junio de 2022): 012047. http://dx.doi.org/10.1088/1742-6596/2290/1/012047.
Texto completoPeimyoo, N., M. D. Barnes, J. D. Mehew, A. De Sanctis, I. Amit, J. Escolar, K. Anastasiou et al. "Laser-writable high-k dielectric for van der Waals nanoelectronics". Science Advances 5, n.º 1 (enero de 2019): eaau0906. http://dx.doi.org/10.1126/sciadv.aau0906.
Texto completoGou, He, Guorui Wang, Yanhong Tong, Qingxin Tang y Yichun Liu. "Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors". Organic Electronics 30 (marzo de 2016): 158–64. http://dx.doi.org/10.1016/j.orgel.2015.12.019.
Texto completoWang, Q. H. y J. G. Swanson. "Optoelectronic modulation spectroscopy applied to the characterization of field effect transistors". Journal of Applied Physics 74, n.º 11 (diciembre de 1993): 7011–13. http://dx.doi.org/10.1063/1.355059.
Texto completoYip, Sen Po, Wei Wang y Johnny C. Ho. "(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications". ECS Meeting Abstracts MA2022-02, n.º 36 (9 de octubre de 2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.
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