Literatura académica sobre el tema "Optoelectronic transistors"
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Artículos de revistas sobre el tema "Optoelectronic transistors"
Soldano, Caterina. "Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)". Materials 14, n.º 13 (5 de julio de 2021): 3756. http://dx.doi.org/10.3390/ma14133756.
Texto completoSoref, Richard. "Applications of Silicon-Based Optoelectronics". MRS Bulletin 23, n.º 4 (abril de 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.
Texto completoPan, James N. "Chromatic and Panchromatic Nonlinear Optoelectronic CMOSFETs for CMOS Image Sensors, Laser Multiplexing, Computing, and Communication". MRS Advances 5, n.º 37-38 (2020): 1965–74. http://dx.doi.org/10.1557/adv.2020.273.
Texto completoHuseynova, Gunel y Vladislav Kostianovskii. "Doped organic field-effect transistors". Material Science & Engineering International Journal 2, n.º 6 (5 de diciembre de 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Texto completoZhang, Junyao, Yang Lu, Shilei Dai, Ruizhi Wang, Dandan Hao, Shiqi Zhang, Lize Xiong y Jia Huang. "Retina-Inspired Organic Heterojunction-Based Optoelectronic Synapses for Artificial Visual Systems". Research 2021 (22 de febrero de 2021): 1–10. http://dx.doi.org/10.34133/2021/7131895.
Texto completoGao, Haikuo, Jinyu Liu, Zhengsheng Qin, Tianyu Wang, Can Gao, Huanli Dong y Wenping Hu. "High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors". Nanoscale 12, n.º 35 (2020): 18371–78. http://dx.doi.org/10.1039/d0nr03569f.
Texto completoVyas, Sumit. "A Short Review on Properties and Applications of Zinc Oxide Based Thin Films and Devices : ZnO as a promising material for applications in electronics, optoelectronics, biomedical and sensors". Johnson Matthey Technology Review 64, n.º 2 (1 de abril de 2020): 202–18. http://dx.doi.org/10.1595/205651320x15694993568524.
Texto completoWu, Jieyun, Qing Li, Wen Wang y Kaixin Chen. "Optoelectronic Properties and Structural Modification of Conjugated Polymers Based on Benzodithiophene Groups". Mini-Reviews in Organic Chemistry 16, n.º 3 (25 de enero de 2019): 253–60. http://dx.doi.org/10.2174/1570193x15666180406144851.
Texto completoUrey, Z., D. Wake, D. J. Newson y I. D. Henning. "Comparison of InGaAs transistors as optoelectronic mixers". Electronics Letters 29, n.º 20 (1993): 1796. http://dx.doi.org/10.1049/el:19931195.
Texto completoHong, Tu, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou y Ya-Qiong Xu. "Polarized photocurrent response in black phosphorus field-effect transistors". Nanoscale 6, n.º 15 (2014): 8978–83. http://dx.doi.org/10.1039/c4nr02164a.
Texto completoTesis sobre el tema "Optoelectronic transistors"
Bird, Matthew J. "Optoelectronic processes in polyfluorene ambipolar transistors". Thesis, University of Cambridge, 2011. https://www.repository.cam.ac.uk/handle/1810/256013.
Texto completoLiu, Chin Pang. "Optoelectronic mixing in heterojunction bipolar transistors". Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312033.
Texto completoHuang, Yong. "InAlGaAs/InP light emitting transistors and transistor lasers operating near 1.55 μm". Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/37298.
Texto completoLoga, Rodney Izzat. "HBT/DHBTs for monolithic optoelectronic interfaces". Thesis, King's College London (University of London), 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268719.
Texto completoTan, Eugene. "Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC), double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT)". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0006/NQ42767.pdf.
Texto completoHo, Kai Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices". HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/816.
Texto completoHo, Ka Wai. "Evaluation and characterization of efficient organic optoelectronic materials and devices". HKBU Institutional Repository, 2020. https://repository.hkbu.edu.hk/etd_oa/873.
Texto completoFiebig, Matthias. "Spatially resolved electronic and optoelectronic measurements of pentacene thin film transistors". Diss., lmu, 2010. http://nbn-resolving.de/urn:nbn:de:bvb:19-122033.
Texto completoUnal, Selim. "Field-effect transistors and optoelectronic devices based on emerging atomically thin materials". Thesis, University of Exeter, 2017. http://hdl.handle.net/10871/27140.
Texto completoYang, Tiebin. "Interfacial Engineering of Thin Single-Crystal Lead Halide Perovskites for High-Performance Optoelectronic Devices". Thesis, The University of Sydney, 2022. https://hdl.handle.net/2123/28205.
Texto completoLibros sobre el tema "Optoelectronic transistors"
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1997 London, England). 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO. [New York]: IEEE, 1997.
Buscar texto completoWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1993 London, UK). High performance electron devices for microwave and optoelectronic applications, EDMO '93, King's College London, 18th October, 1993: Announcement & programme for workshop. [London]: IEEE, 1993.
Buscar texto completoWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 University of Leeds). 1996 High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, EDMO. [New York]: IEEE, 1996.
Buscar texto completoWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1995 London, England). 1995 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications: EDMO. Piscataway, NJ: IEEE Service Center, 1995.
Buscar texto completoSimons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. [Washington, D.C.]: National Aeronautics and Space Administration, 1988.
Buscar texto completoWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (1996 London, England). 1996 High performance electron devices for microwave and optoelectronic applications workshop: EDMO 96 : [Weetwood Hall, the University of Leeds, 25-26 November 1996]. Piscataway, N.J: IEEE Service Center, 1996.
Buscar texto completoSiGe heterojunction bipolar transistors. Chichester: Wiley, 2004.
Buscar texto completoTaiwan de jing tan hao: Tai Ri Han TFT shi ji zhi zheng. Taiabei Shi: Shi bao wen hua chu ban qi ye gu fen you xian gong si, 2004.
Buscar texto completoAdvanced, Workshop on Frontiers in Electronics (1997 Santa Cruz de Tenerife Spain). 1997 Advanced Workshop on Frontiers in Electronics: WOFE '97 proceedings : Puerto de la Cruz, Tenerife, Spain, 6-11 January 1997. New York: Institute of Electrical and Electronics Engineers, 1997.
Buscar texto completoIm, Seongil. Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors. Dordrecht: Springer Netherlands, 2013.
Buscar texto completoCapítulos de libros sobre el tema "Optoelectronic transistors"
Cooper, Donald E. y Steven C. Moss. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors". En Picosecond Electronics and Optoelectronics, 62–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_11.
Texto completoKusmartsev, F. V., W. M. Wu, M. P. Pierpoint y K. C. Yung. "Application of Graphene Within Optoelectronic Devices and Transistors". En Progress in Optical Science and Photonics, 191–221. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-287-242-5_9.
Texto completoLambrechts, Wynand y Saurabh Sinha. "Frequency Response of Optoelectronic Receivers: The Motivation for Faster Transistors". En Signals and Communication Technology, 167–200. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-47403-8_6.
Texto completoPrelipceanu, Marius y Adrian Graur. "Study of New Organic Field Transistors for RFID, Optoelectronic and Mobile Applications". En Lecture Notes in Electrical Engineering, 135–42. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-05440-7_11.
Texto completoSahri, Nabil, Tadao Nagatsuma, Taiichi Otsuji, Naofumi Shimizu y Makoto Yaita. "Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer". En Springer Series in Chemical Physics, 194–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 1998. http://dx.doi.org/10.1007/978-3-642-72289-9_58.
Texto completoAlbrecht, H. "Pin Photodiodes and Field-Effect Transistors for Monolithically Integrated InP/InGaAs Optoelectronic Circuits". En Micro System Technologies 90, 767–72. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-45678-7_110.
Texto completoTamura, Hiroyuki. "Theoretical Analysis on Optoelectronic Properties of Organic Materials: Solar Cells and Light-Emitting Transistors". En Progress in Nanophotonics 3, 57–82. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-11602-0_2.
Texto completoWang, Chengliang, Lang Jiang y Wenping Hu. "Organic/Polymeric Field-Effect Transistors". En Organic Optoelectronics, 95–170. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch3.
Texto completoMeng, Qing, Huanli Dong y Wenping Hu. "Organic/Polymeric Semiconductors for Field-Effect Transistors". En Organic Optoelectronics, 43–94. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch2.
Texto completoTang, Qinqxin, Yanhong Tong y Wenping Hu. "Organic Circuits and Organic Single-Molecule Transistors". En Organic Optoelectronics, 171–276. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527653454.ch4.
Texto completoActas de conferencias sobre el tema "Optoelectronic transistors"
Cooper, Donald E. "Picosecond Optoelectronic Diagnostics of Field Effect Transistors". En Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/peo.1985.thc3.
Texto completoShur, Michael S. y Mohamed A. Khan. "Optoelectronic GaN-based field effect transistors". En Photonics West '95, editado por Manijeh Razeghi, Yoon-Soo Park y Gerald L. Witt. SPIE, 1995. http://dx.doi.org/10.1117/12.206879.
Texto completoSchuermeyer, Fritz. "Optoelectronic pseudomorphic high-electron-mobility transistors". En Photonics West '97, editado por Yoon-Soo Park y Ramu V. Ramaswamy. SPIE, 1997. http://dx.doi.org/10.1117/12.264208.
Texto completoGrot, Annette, Steven Lin y Demetri Psaltis. "Optoelectronic neurons using MSM detectors in GaAs". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk4.
Texto completoBryan, Robert P., Jack L. Jewell, Greg R. Olbright y Winston S. Fu. "Smart pixel optoelectronic interconnects: integrated microlasers/transistors". En OE/LASE'93: Optics, Electro-Optics, & Laser Applications in Science& Engineering, editado por Ray T. Chen. SPIE, 1993. http://dx.doi.org/10.1117/12.147100.
Texto completoPavuna, Davor. "Applications of HTSC Films in Hybrid Optoelectronic Devices". En Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321825.
Texto completoSkogman, R. A. "Atomic layer epitaxy of YBaCuO for optoelectronic applications". En Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321837.
Texto completoLin, Steven y Demetri Psaltis. "GaAs optoelectronic neurons". En OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.mk1.
Texto completoKang, Youn-Seon, Bo Xiao, Ya I. Alivov, Qian Fan, Jinqiao Xie y Hadis Morko. "Ferroelectric PZT/AlGaN/GaN field effect transistors". En Integrated Optoelectronic Devices 2006, editado por Cole W. Litton, James G. Grote, Hadis Morkoc y Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.657584.
Texto completoHsieh, Chi-Ti, Pi-Ju Cheng, Chih-Hsien Lin y Shu-Wei Chang. "Carrier lifetime of heavily p-doped base in light-emitting transistors and transistor lasers". En Physics and Simulation of Optoelectronic Devices XXVII, editado por Marek Osiński, Yasuhiko Arakawa y Bernd Witzigmann. SPIE, 2019. http://dx.doi.org/10.1117/12.2508189.
Texto completoInformes sobre el tema "Optoelectronic transistors"
Cooper, Donald E. y Steven C. Moss. Picosecond Optoelectronic Diagnostics of Field Effect Transistors,. Fort Belvoir, VA: Defense Technical Information Center, junio de 1986. http://dx.doi.org/10.21236/ada170503.
Texto completoCooper, Donald E. y Steven C. Moss. Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor). Fort Belvoir, VA: Defense Technical Information Center, junio de 1986. http://dx.doi.org/10.21236/ada170618.
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