Literatura académica sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
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Artículos de revistas sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
Sang, Xianhe, Yongfu Wang, Qinglin Wang, Liangrui Zou, Shunhao Ge, Yu Yao, Xueting Wang, Jianchao Fan y Dandan Sang. "A Review on Optoelectronical Properties of Non-Metal Oxide/Diamond-Based p-n Heterojunction". Molecules 28, n.º 3 (30 de enero de 2023): 1334. http://dx.doi.org/10.3390/molecules28031334.
Texto completoGao, Q., H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Y. Kim, L. M. Smith et al. "Nanowires for optoelectronic device applications". physica status solidi (c) 6, n.º 12 (diciembre de 2009): 2678–82. http://dx.doi.org/10.1002/pssc.200982528.
Texto completoHeutz, Sandrine, Paul Sullivan, Brett M. Sanderson, Stephan M. Schultes y Tim S. Jones. "Molecular Thin Films for Optoelectronic Applications". Solid State Phenomena 121-123 (marzo de 2007): 373–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.373.
Texto completoLi, Ziwei, Boyi Xu, Delang Liang y Anlian Pan. "Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials". Research 2020 (29 de agosto de 2020): 1–35. http://dx.doi.org/10.34133/2020/5464258.
Texto completoJeon, Jaeho, Yajie Yang, Haeju Choi, Jin-Hong Park, Byoung Hun Lee y Sungjoo Lee. "MXenes for future nanophotonic device applications". Nanophotonics 9, n.º 7 (13 de mayo de 2020): 1831–53. http://dx.doi.org/10.1515/nanoph-2020-0060.
Texto completoXu, Wangqiong, Ying Lu, Weibin Lei, Fengrui Sui, Ruru Ma, Ruijuan Qi y Rong Huang. "FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector". Micromachines 13, n.º 1 (22 de diciembre de 2021): 11. http://dx.doi.org/10.3390/mi13010011.
Texto completoJamal-Eddine, Zane, Yuewei Zhang y Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics". International Journal of High Speed Electronics and Systems 28, n.º 01n02 (marzo de 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.
Texto completoVazhdaev, Konstantin, Marat Urakseev, Azamat Allaberdin y Kostantin Subkhankulov. "OPTOELECTRONIC DEVICES BASED ON DIFFRACTION GRATINGS FROM STANDING ELASTIC WAVES". Electrical and data processing facilities and systems 18, n.º 3-4 (2022): 151–58. http://dx.doi.org/10.17122/1999-5458-2022-18-3-4-151-158.
Texto completoHeydari Gharahcheshmeh, Meysam y Karen K. Gleason. "Recent Progress in Conjugated Conducting and Semiconducting Polymers for Energy Devices". Energies 15, n.º 10 (17 de mayo de 2022): 3661. http://dx.doi.org/10.3390/en15103661.
Texto completoXu, Heng Rui y Ping Liu. "Patterning Method for Nanowire Transparent Conductive Films". Materials Science Forum 1036 (29 de junio de 2021): 66–76. http://dx.doi.org/10.4028/www.scientific.net/msf.1036.66.
Texto completoTesis sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
Guptah, Vinod Kumar. "Growth on patterned substrates for optoelectronic device applications". Thesis, University College London (University of London), 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267027.
Texto completoAlexandropoulos, Dimitrios. "Theoretical studies of GaInNAs for optoelectronic device applications". Thesis, University of Essex, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.274313.
Texto completoPratt, Andrew Richard. "Control of indium migration on patterned substrates for optoelectronic device applications". Thesis, Imperial College London, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307775.
Texto completoGrudowski, Paul A. "The metalorganic chemical vapor deposition of III-V nitrides for optoelectronic device applications /". Digital version accessible at:, 1998. http://wwwlib.umi.com/cr/utexas/main.
Texto completoXin, Huoping. "Gas-source molecular beam epitaxy of GaInNAs and Ga(In)NP for electronic and optoelectronic device applications /". Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p9970681.
Texto completoKim, Danny. "Dry passivation studies of GaAs(110) surfaces by Gallium Oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications". Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63140.pdf.
Texto completoCheung, Chor-keung. "The construction of a focused low energy positron beam facility and its application in the study of various optoelectronic materials". View the Table of Contents & Abstract, 2006. http://sunzi.lib.hku.hk/hkuto/record/B36995770.
Texto completoCheung, Chor-keung y 張初強. "The construction of a focused low energy positron beam facility and its application in the study of various optoelectronic materials". Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2006. http://hub.hku.hk/bib/B37434925.
Texto completoLi, Cheng. "Metal oxide films for optoelectronic device application". Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648598.
Texto completoDavis, Nathaniel J. L. K. "Applications of spectral management in optoelectronic devices". Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/263670.
Texto completoLibros sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
M, Razeghi, Society of Photo-optical Instrumentation Engineers., Europtica Services I. C, American Physical Society y International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications (1990 : Aachen, Germany), eds. Physical concepts of materials for novel optoelectronic device applications II: Device physics and applications : 28 October-2 November 1990, Aachen, Federal Republic of Germany. Bellingham, Wash., USA: SPIE, 1991.
Buscar texto completoLitton, Cole W., Donald C. Reynolds y Thomas C. Collins, eds. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.
Texto completoLitton, Cole W. Zinc oxide materials for electronic and optoelectronic device applications. Chichester: Wiley, 2011.
Buscar texto completoFabio, Beltram, Gornik E, European Optical Society, International Centre for Science and High Technology. y Society of Photo-optical Instrumentation Engineers., eds. Physical concepts and materials for novel optoelectronic device applications II: International symposium, 24-27 May 1993, Trieste, Italy. Bellingham, Wash., USA: SPIE, 1993.
Buscar texto completoM, Razeghi, Society of Photo-optical Instrumentation Engineers., Europtica Services I. C y American Physical Society, eds. Physical concepts of materials for novel optoelectronic device applications I: Materials growth and characterization : 28 October-2 November 1990, Aachen, Federal Republic of Germany. Bellingham, Wash., USA: SPIE, 1991.
Buscar texto completo1948-, Chen David, ed. Semiconductor optoelectronic device manufacturing and applications: 7-9 November 2001, Nanjing, China. Bellingham, Wash., USA: SPIE, 2001.
Buscar texto completoAndreas, Ostendorf, Society of Photo-optical Instrumentation Engineers y European Optical Society, eds. Laser micromachining for optoelectronic device fabrication: 30 October 2002, Brugge, Belgium. Bellingham, Washington: SPIE, 2003.
Buscar texto completoSymposium, L. on III-V. Nitrides Semiconductors and Ceramics (1997 Strasbourg France). III-V nitrides, semiconductors, and ceramics: From material growth to device applications : proceedings of Symposium L on III-V Nitrides, Semiconductors, and Ceramics : from material growth to device applications of the 1997 ICAM/E-MRS Spring Conference, Strasbourg, France, June 16-20, 1997. Amsterdam: Elsevier, 1997.
Buscar texto completoSun, I.-Chung Miles. Photoluminescence and optical anisotropy of GaAs/AlGaAs quantum dots for optoelectronic device applications. Ottawa: National Library of Canada, 2002.
Buscar texto completoApplied optics fundamentals and device applications: Nano, MOEMS, and biotechnology. Boca Raton, FL: Taylor & Francis, 2011.
Buscar texto completoCapítulos de libros sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
Springholz, G. y G. Bauer. "9.8 Optoelectronic device applications". En Growth and Structuring, 538–40. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_103.
Texto completoLi, Chaoyang, Xin Li y Dapeng Wang. "Fabrication of ZnO Thin Film and Nanostructures for Optoelectronic Device Applications". En Oxide Thin Films, Multilayers, and Nanocomposites, 239–71. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-14478-8_12.
Texto completoCollins, T. C. y R. J. Hauenstein. "Fundamental Properties of ZnO". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 1–28. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch1.
Texto completoBagnall, D. M. "Room Temperature Stimulated Emission and ZnO-Based Lasers". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 265–84. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch10.
Texto completoZhong, Jian y Yicheng Lu. "ZnO-Based Ultraviolet Detectors". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 285–329. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch11.
Texto completoMakino, Takayuki, Yusaburo Segawa, Masashi Kawasaki y Hideomi Koinuma. "Room-Temperature Stimulated Emission from ZnO Multiple Quantum Wells Grown on Lattice-Matched Substrates". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 331–49. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch12.
Texto completoReynolds, D. C., C. W. Litton y T. C. Collins. "Optical Properties of ZnO". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 29–60. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch2.
Texto completoClaflin, B. y D. C. Look. "Electrical Transport Properties in Zinc Oxide". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 61–86. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch3.
Texto completoBrillson, Leonard J. "ZnO Surface Properties and Schottky Contacts". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 87–112. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch4.
Texto completoJanotti, Anderson y Chris G. Van de Walle. "Native Point Defects and Doping in ZnO". En Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 113–34. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch5.
Texto completoActas de conferencias sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
Tidrow, Meimei Z., William A. Beck, William W. Clark III, Herbert K. Pollehn, John W. Little, Nibir K. Dhar, Richard P. Leavitt et al. "Device physics and focal plane array applications of QWIP and MCT". En Optoelectronics '99 - Integrated Optoelectronic Devices, editado por Gail J. Brown y Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344591.
Texto completoDohler, Gottfried H. "Optoelectronic Device Applications Of Doping Superlattices". En 1987 Symposium on the Technologies for Optoelectronics, editado por Alfred R. Adams. SPIE, 1988. http://dx.doi.org/10.1117/12.943403.
Texto completoYu, Jae Su, Jung Woo Leem, Yeong Hwan Ko y Hee Kwan Lee. "Semiconductor nanostructures towards optoelectronic device applications". En SPIE OPTO, editado por Manijeh Razeghi, Eric Tournie y Gail J. Brown. SPIE, 2012. http://dx.doi.org/10.1117/12.907968.
Texto completoJen, Alex K. Y., Hong Ma, Xiaoming Wu, Jianyao Wu, Sen Liu, Seth R. Marder, Larry R. Dalton y Ching-Fong Shu. "Recent development of highly efficient chromophores and polymers for electro-optic device applications". En Optoelectronics '99 - Integrated Optoelectronic Devices, editado por Bernard Kippelen. SPIE, 1999. http://dx.doi.org/10.1117/12.348388.
Texto completoBawendi, Moungi. "Nanocrystals for thin film optoelectronic device applications". En LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688712.
Texto completoBrongersma, Mark L. "Optoelectronic device applications of metafilms (Conference Presentation)". En Metamaterials, Metadevices, and Metasystems 2017, editado por Nader Engheta, Mikhail A. Noginov y Nikolay I. Zheludev. SPIE, 2017. http://dx.doi.org/10.1117/12.2276207.
Texto completoGao, Q., H. Joyce, S. Paiman, J. H. Kang, H. H. Tan, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Jin Zou y C. Jagadish. "Compound semiconductor nanowires for optoelectronic device applications". En 2011 ICO International Conference on Information Photonics (IP). IEEE, 2011. http://dx.doi.org/10.1109/ico-ip.2011.5953760.
Texto completoYAMAGUCHI, K. "Optoelectronic integrated circuit device technology and applications". En Optical Fiber Communication Conference. Washington, D.C.: OSA, 1988. http://dx.doi.org/10.1364/ofc.1988.wf1.
Texto completoFischer, I. A., F. Oliveira, A. Benedetti, S. Chiussi y J. Schulze. "(Si)GeSn nanostructures for optoelectronic device applications". En 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2016. http://dx.doi.org/10.1109/mipro.2016.7522099.
Texto completoGan, Yi, Jun Zhang, Shan Jiang, Xiaodong Huang, Ning Zhou y Ligang Deng. "Applications of ICP in optoelectronic device fabrication". En Asia-Pacific Optical Communications, editado por Chung-En Zah, Yi Luo y Shinji Tsuji. SPIE, 2005. http://dx.doi.org/10.1117/12.575729.
Texto completoInformes sobre el tema "OPTOELECTRONIC DEVICE APPLICATIONS"
Spahn, Olga B., Andrew A. Allerman, Kent D. Choquette, Gregory A. Vawter, John F. Klem, Charles T. Sullivan, John P. Sullivan et al. Selective Oxidation Technology and its Applications Toward Electronic and Optoelectronic Devices. Office of Scientific and Technical Information (OSTI), julio de 1999. http://dx.doi.org/10.2172/9462.
Texto completoBACA, ALBERT G., RONALD D. BRIGGS, ANDREW A. ALLERMAN, CHRISTINE C. MITCHELL, ARTHUR J. FISCHER, CAROL I. ASHBY, ALAN F. WRIGHT y RANDY J. SHUL. High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications. Office of Scientific and Technical Information (OSTI), diciembre de 2001. http://dx.doi.org/10.2172/789599.
Texto completoOsgood, Richard M. y Jr. Selective Processing Techniques for Electronic and Optoelectronic Applications: Quantum-Well Devices and Integrated Optic Circuits. Fort Belvoir, VA: Defense Technical Information Center, septiembre de 1999. http://dx.doi.org/10.21236/ada369792.
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