Artículos de revistas sobre el tema "On-Wafer characterization"
Crea una cita precisa en los estilos APA, MLA, Chicago, Harvard y otros
Consulte los 50 mejores artículos de revistas para su investigación sobre el tema "On-Wafer characterization".
Junto a cada fuente en la lista de referencias hay un botón "Agregar a la bibliografía". Pulsa este botón, y generaremos automáticamente la referencia bibliográfica para la obra elegida en el estilo de cita que necesites: APA, MLA, Harvard, Vancouver, Chicago, etc.
También puede descargar el texto completo de la publicación académica en formato pdf y leer en línea su resumen siempre que esté disponible en los metadatos.
Explore artículos de revistas sobre una amplia variedad de disciplinas y organice su bibliografía correctamente.
Saedon, Juri B., Siti Musalmah Md Ibrahim, Amir Radzi Abd Ghani y Muhammad Hafizi Bin Abd Razak. "Dicing Characterization on Optical Silicon Wafer Waveguide". Applied Mechanics and Materials 899 (junio de 2020): 163–68. http://dx.doi.org/10.4028/www.scientific.net/amm.899.163.
Texto completoKoolen, M. C. A. M. "On-wafer high-frequency device characterization". Microelectronic Engineering 19, n.º 1-4 (septiembre de 1992): 679–86. http://dx.doi.org/10.1016/0167-9317(92)90521-r.
Texto completoLau, J. H., P.-J. Tzeng, C.-K. Lee, C.-J. Zhan, M.-J. Dai, Li Li, C.-T. Ko et al. "Wafer Bumping and Characterizations of Fine-Pitch Lead-Free Solder Microbumps on 12” (300mm) wafer for 3D IC Integration". International Symposium on Microelectronics 2011, n.º 1 (1 de enero de 2011): 000650–56. http://dx.doi.org/10.4071/isom-2011-wa6-paper2.
Texto completoTeixeira, Jorge, Mário Ribeiro y Nélson Pinho. "Advanced warpage characterization for FOWLP". International Symposium on Microelectronics 2013, n.º 1 (1 de enero de 2013): 000641–46. http://dx.doi.org/10.4071/isom-2013-wp21.
Texto completoKerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav y Kurt Hingerl. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization". ECS Transactions 112, n.º 3 (29 de septiembre de 2023): 159–72. http://dx.doi.org/10.1149/11203.0159ecst.
Texto completoDeleniv, Anatoly, Andrei Vorobiev y Spartak Gevorgian. "On-Wafer Characterization of Varactor Using Resonating Microprobes". IEEE Transactions on Microwave Theory and Techniques 56, n.º 5 (mayo de 2008): 1105–11. http://dx.doi.org/10.1109/tmtt.2008.921283.
Texto completoLaskar, J., J. J. Bautista, M. Nishimoto, M. Hamai y R. Lai. "Development of accurate on-wafer, cryogenic characterization techniques". IEEE Transactions on Microwave Theory and Techniques 44, n.º 7 (julio de 1996): 1178–83. http://dx.doi.org/10.1109/22.508659.
Texto completoMoore, B., M. Margala y C. Backhouse. "Design of wireless on-wafer submicron characterization system". IEEE Transactions on Very Large Scale Integration (VLSI) Systems 13, n.º 2 (febrero de 2005): 169–80. http://dx.doi.org/10.1109/tvlsi.2004.840780.
Texto completoCHEN, CHIH-HUNG. "ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS". Fluctuation and Noise Letters 08, n.º 03n04 (diciembre de 2008): L281—L303. http://dx.doi.org/10.1142/s0219477508005136.
Texto completoSeong, Inho, Jinho Lee, Sijun Kim, Youngseok Lee, Chulhee Cho, Jangjae Lee, Wonnyoung Jeong, Yebin You y Shinjae You. "Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma". Nanomaterials 12, n.º 22 (10 de noviembre de 2022): 3963. http://dx.doi.org/10.3390/nano12223963.
Texto completoHong, Hao-Chiao y Long-Yi Lin. "Accurate and Fast On-Wafer Test Circuitry for Device Array Characterization in Wafer Acceptance Test". IEEE Transactions on Circuits and Systems I: Regular Papers 66, n.º 9 (septiembre de 2019): 3467–79. http://dx.doi.org/10.1109/tcsi.2019.2924251.
Texto completoKerepesi, Péter, Bernhard Rebhan, Matthias Danner, Karin Stadlmann, Heiko Groiss, Peter Oberhumer, Jiri Duchoslav y Kurt Hingerl. "Oxide-Free SiC-SiC Direct Wafer Bonding and Its Characterization". ECS Meeting Abstracts MA2023-02, n.º 33 (22 de diciembre de 2023): 1603. http://dx.doi.org/10.1149/ma2023-02331603mtgabs.
Texto completoField, Daniel E., James W. Pomeroy, Farzan Gity, Michael Schmidt, Pasqualino Torchia, Fan Li, Peter M. Gammon, Vishal A. Shah y Martin Kuball. "Thermal characterization of direct wafer bonded Si-on-SiC". Applied Physics Letters 120, n.º 11 (14 de marzo de 2022): 113503. http://dx.doi.org/10.1063/5.0080668.
Texto completoLiu, Kai, YongTaek Lee, HyunTai Kim, MaPhooPwint Hlaing, Susan Park y Billy Ahn. "Electrical Characterization on a High-Speed Wafer-Level Package". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (1 de enero de 2013): 001937–62. http://dx.doi.org/10.4071/2013dpc-tha23.
Texto completoKazemi Esfeh, Babak, Khaled Ben Ali y Jean-Pierre Raskin. "Compact On-Wafer Test Structures for Device RF Characterization". IEEE Transactions on Electron Devices 64, n.º 8 (agosto de 2017): 3101–7. http://dx.doi.org/10.1109/ted.2017.2717196.
Texto completoDunleavy, L. P., J. Randa, D. K. Walker, R. Billinger y J. Rice. "Characterization and applications of on-wafer diode noise sources". IEEE Transactions on Microwave Theory and Techniques 46, n.º 12 (1998): 2620–28. http://dx.doi.org/10.1109/22.739255.
Texto completoImai, M., Y. Miyamura, D. Murata y A. Ogi. "Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method". Solid State Phenomena 108-109 (diciembre de 2005): 451–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.451.
Texto completoHoff, A. M. y E. Oborina. "Fast Non-Contact Dielectric Characterization for SiC MOS Processing". Materials Science Forum 527-529 (octubre de 2006): 1035–38. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1035.
Texto completoCaddemi, Alina, Emanuele Cardillo, Giovanni Crupi, Luciano Boglione y Jason Roussos. "Microwave Linear Characterization Procedures of On-Wafer Scaled GaAs pHEMTs for Low-Noise Applications". Electronics 8, n.º 11 (18 de noviembre de 2019): 1365. http://dx.doi.org/10.3390/electronics8111365.
Texto completoCavaco, Celso, Lan Peng, Koen De Leersnijder, Stefano Guerrieri, Deniz S. Tezcan y Haris Osman. "Copper Oxide Direct Bonding of 200mm CMOS Wafers: Morphological and Electrical Characterization". International Symposium on Microelectronics 2015, n.º 1 (1 de octubre de 2015): 000594–97. http://dx.doi.org/10.4071/isom-2015-tha26.
Texto completoMarino, Nobuaki, Kiichirou Murai y Yoshinori Kataora. "Characterization of Surface Contaminants by a Silver Film-Enhanced IR—Johnson Method". Applied Spectroscopy 51, n.º 10 (octubre de 1997): 1460–63. http://dx.doi.org/10.1366/0003702971939226.
Texto completoChun, C., A. Pham, J. Laskar y B. Hutchison. "Development of microwave package models utilizing on-wafer characterization techniques". IEEE Transactions on Microwave Theory and Techniques 45, n.º 10 (1997): 1948–54. http://dx.doi.org/10.1109/22.641800.
Texto completoSimons, R. N. y R. Q. Lee. "On-wafer characterization of millimeter-wave antennas for wireless applications". IEEE Transactions on Microwave Theory and Techniques 47, n.º 1 (1999): 92–96. http://dx.doi.org/10.1109/22.740086.
Texto completoRussell, Damon, Kieran Cleary y Rodrigo Reeves. "Cryogenic probe station for on-wafer characterization of electrical devices". Review of Scientific Instruments 83, n.º 4 (abril de 2012): 044703. http://dx.doi.org/10.1063/1.3700213.
Texto completoDescamps, Philippe, Dolphin Abessolo-Bidzo y Patrick Poirier. "Improved test structure for on-wafer microwave characterization of components". Microwave and Optical Technology Letters 53, n.º 2 (15 de diciembre de 2010): 249–54. http://dx.doi.org/10.1002/mop.25738.
Texto completoFresquet, Gilles y Jean-Philippe Piel. "Optical Characterization and Defect inspection for 3D stacked IC technology". International Symposium on Microelectronics 2014, n.º 1 (1 de octubre de 2014): 000630–34. http://dx.doi.org/10.4071/isom-wp17.
Texto completoKim, Taehyun, Sangwug Han, Jubum Lee, Yeeun Na, Joontaek Jung, Yun Chang Park, Jaesub Oh, Chungmo Yang y Hee Yeoun Kim. "Development and Characterization of Low Temperature Wafer-Level Vacuum Packaging Using Cu-Sn Bonding and Nanomultilayer Getter". Micromachines 14, n.º 2 (14 de febrero de 2023): 448. http://dx.doi.org/10.3390/mi14020448.
Texto completoMajeed, Bivragh, Chengxun Liu, Erik Sohn, Lut Van Acker, Koen De Wijs, Deniz Sabuncuoglu y Liesbet Lagae. "Silicon based cell sorting device: Fabrication, characterization and applications". International Symposium on Microelectronics 2016, n.º 1 (1 de octubre de 2016): 000019–24. http://dx.doi.org/10.4071/isom-2016-tp15.
Texto completoHaisu, M., Uda Hashim y Q. Humayun. "Micro-Gap Electrodes Fabrication by Low Cost Conventional Photo Lithography Technique and Surface Characterization by Nanoprofiler". Advanced Materials Research 925 (abril de 2014): 635–40. http://dx.doi.org/10.4028/www.scientific.net/amr.925.635.
Texto completoCakmak, Erkan, Bioh Kim y Viorel Dragoi. "Characterization of Wafer Level Metal Thermo-Compression Bonding". Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (1 de enero de 2010): 002326–60. http://dx.doi.org/10.4071/2010dpc-tha34.
Texto completoINABA, Michihiko. "Present and Future of Surface Characterization. Surface Characterization on Si Wafer for Semiconductor Devices." Journal of the Japan Society for Precision Engineering 61, n.º 11 (1995): 1511–15. http://dx.doi.org/10.2493/jjspe.61.1511.
Texto completoTajima, Michio, E. Higashi, Toshihiko Hayashi, Hiroyuki Kinoshita y Hiromu Shiomi. "Characterization of SiC Wafers by Photoluminescence Mapping". Materials Science Forum 527-529 (octubre de 2006): 711–16. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.711.
Texto completoYu, Hengshu, Junbo Wang, Yulan Lu, Bo Xie, Yanlong Shang y Zhao Liu. "A silicon resonant pressure sensor based on thermal stresses matched structures". Journal of Physics: Conference Series 2740, n.º 1 (1 de abril de 2024): 012041. http://dx.doi.org/10.1088/1742-6596/2740/1/012041.
Texto completoFerrero, A. y U. Pisani. "An improved calibration technique for on-wafer large-signal transistor characterization". IEEE Transactions on Instrumentation and Measurement 42, n.º 2 (abril de 1993): 360–64. http://dx.doi.org/10.1109/19.278582.
Texto completoArcher, J. W. y R. A. Batchelor. "Fully automated on-wafer noise characterization of GaAs MESFETs and HEMTs". IEEE Transactions on Microwave Theory and Techniques 40, n.º 2 (1992): 209–16. http://dx.doi.org/10.1109/22.120092.
Texto completoScholz, M., D. Linten, S. Thijs, S. Sangameswaran, M. Sawada, T. Nakaei, T. Hasebe y G. Groeseneken. "ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool?" IEEE Transactions on Instrumentation and Measurement 58, n.º 10 (octubre de 2009): 3418–26. http://dx.doi.org/10.1109/tim.2009.2017657.
Texto completoTiemeijer, Luuk F., Ralf M. T. Pijper y Edwin van der Heijden. "Complete On-Wafer Noise-Figure Characterization of 60-GHz Differential Amplifiers". IEEE Transactions on Microwave Theory and Techniques 58, n.º 6 (junio de 2010): 1599–608. http://dx.doi.org/10.1109/tmtt.2010.2049167.
Texto completoCaddemi, A. y N. Donato. "Temperature-dependent noise characterization and modeling of on-wafer microwave transistors". Microelectronics Reliability 42, n.º 3 (marzo de 2002): 361–66. http://dx.doi.org/10.1016/s0026-2714(02)00004-5.
Texto completoLinz, Sarah, Florian Oesterle, Stefan Lindner, Sebastian Mann, Robert Weigel y Alexander Koelpin. "Test Method for Contactless On-Wafer MEMS Characterization and Production Monitoring". IEEE Transactions on Microwave Theory and Techniques 64, n.º 11 (noviembre de 2016): 3918–26. http://dx.doi.org/10.1109/tmtt.2016.2612664.
Texto completoTerayama, Yuki, Motoyasu Kobayashi, Sono Sasaki, Osami Sakata y Atsushi Takahara. "Structural Characterization of Surface-grafted Poly (Vinyl Alcohol) on Silicon Wafer". Transactions of the Materials Research Society of Japan 32, n.º 1 (2007): 259–62. http://dx.doi.org/10.14723/tmrsj.32.259.
Texto completoStake, Jan y Hans Grönqvist. "An on-wafer method for C-V characterization of heterostructure diodes". Microwave and Optical Technology Letters 9, n.º 2 (5 de junio de 1995): 63–66. http://dx.doi.org/10.1002/mop.4650090202.
Texto completoLederer, Dimitri y Jean-Pierre Raskin. "On-wafer wideband characterization: a powerful tool for improving the IC technologies". Journal of Telecommunications and Information Technology, n.º 2 (25 de junio de 2023): 69–77. http://dx.doi.org/10.26636/jtit.2007.2.811.
Texto completoTorimi, Satoshi, Norihito Yabuki, Takuya Sakaguchi, Masato Shinohara, Yoji Teramoto, Satoru Nogami, Makoto Kitabatake y Junji Senzaki. "Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process". Materials Science Forum 924 (junio de 2018): 349–52. http://dx.doi.org/10.4028/www.scientific.net/msf.924.349.
Texto completoWang, Yibang, Xingchang Fu, Aihua Wu, Chen Liu, Peng Luan, Faguo Liang, Wei Zhao y Xiaobang Shang. "Development of gallium-arsenide-based GCPW calibration kits for on-wafer measurements in the W-band". International Journal of Microwave and Wireless Technologies 12, n.º 5 (12 de diciembre de 2019): 367–71. http://dx.doi.org/10.1017/s1759078719001521.
Texto completoZhu, Liang, Biao Mei, Weidong Zhu y Wei Li. "Laser-based Thickness Control in a Double-Side Polishing System for Silicon Wafers". Sensors 20, n.º 6 (13 de marzo de 2020): 1603. http://dx.doi.org/10.3390/s20061603.
Texto completoChan, Mu-Hsuan, Yu-Po Wang, Ivan Chang, James Chiang, George Pan, Nicholas Kao y David Wang. "Development and Challenges of Warpage for Fan-Out Wafer-Level Package Technology". International Symposium on Microelectronics 2016, n.º 1 (1 de octubre de 2016): 000524–28. http://dx.doi.org/10.4071/isom-2016-poster4.
Texto completoHan, Chansu, Yoonsung Koo, Jaehwan Kim, Kwangwook Choi y Sangjeen Hong. "Wafer Type Ion Energy Monitoring Sensor for Plasma Diagnosis". Sensors 23, n.º 5 (22 de febrero de 2023): 2410. http://dx.doi.org/10.3390/s23052410.
Texto completoMarzouk, Jaouad, Steve Arscott, Abdelhatif El Fellahi, Kamel Haddadi, Tuami Lasri, Christophe Boyaval y Gilles Dambrine. "MEMS probes for on-wafer RF microwave characterization of future microelectronics: design, fabrication and characterization". Journal of Micromechanics and Microengineering 25, n.º 7 (24 de junio de 2015): 075024. http://dx.doi.org/10.1088/0960-1317/25/7/075024.
Texto completoArias, Abraham, Nicola Nedev, Mario Curiel, Diana Nesheva, Emil Manolov, Benjamin Valdez, David Mateos, Oscar Contreras, Oscar Raymond y Jesus M. Siqueiros. "Electrical Characterization of Interface Defects in MOS Structures Containing Silicon Nanoclusters". Advanced Materials Research 976 (junio de 2014): 129–32. http://dx.doi.org/10.4028/www.scientific.net/amr.976.129.
Texto completoNeudeck, Philip G., Liang Yu Chen, David J. Spry, Glenn M. Beheim y Carl W. Chang. "Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design". Materials Science Forum 821-823 (junio de 2015): 781–84. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.781.
Texto completo